JP2011233386A - Ion implanter and beam current density distribution adjustment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently adjust a current density distribution of beams of respective ribbon-like ion beams in an ion implanter for at least partially overlapping irradiation regions on a glass substrate by m (m is an integer equal to or larger than 2) lines of ribbon-like ion beams and realizing a predetermined implantation amount distribution.SOLUTION: A target distribution to be an adjustment target of a beam current density distribution is set for the respective ribbon-like ion beams, and first to (m-1)th ribbon-like ion beams are adjusted such that the beam current density distribution is within a first allowable range for the target distribution. Thereafter, a new target distribution for adjusting the beam current density distribution of the m-th ion beam is set in accordance with a difference between the distribution for which adjustment results for the respective ribbon-like ion beams are totaled and the distribution for which the target distributions set for m lines of the ion beams are totaled, and the m-th beam current density distribution is adjusted so as to be within a second allowable range for the new target distribution.

Description

  The present invention relates to an ion implantation apparatus that forms a predetermined implantation amount distribution on a glass substrate by superimposing irradiation regions with a plurality of ribbon-like ion beams, and a method for adjusting a beam current density distribution used in the ion implantation apparatus.

  In recent years, the size of liquid crystal products typified by liquid crystal televisions has increased significantly. In the semiconductor manufacturing process, in order to process more liquid crystal panels in one processing process, an attempt is made to increase the size of the glass substrate and to take multiple liquid crystal panels from a large glass substrate. An ion implantation apparatus which is one of semiconductor manufacturing apparatuses is also required to cope with such a large glass substrate.

  In order to meet such a demand, an ion implantation apparatus described in Patent Document 1 has been developed so far.

  Patent Document 1 discloses a technique for performing an ion implantation process on the entire surface of a glass substrate using two ion beams smaller than the size of the glass substrate. More specifically, in Patent Document 1, as an example, each of three directions (X, Y, and Z directions) orthogonal to each other is represented by the short side direction of the ion beam, the long side direction of the ion beam, and the traveling direction of the ion beam. Is defined as The two ion beams are shifted from each other in the X direction so that the irradiation areas of the respective ion beams on the glass substrate in the Y direction partially overlap with each other. Irradiation is performed in a processing chamber in which an injection process is performed. And the ion implantation process over the whole glass substrate is implement | achieved by conveying a glass substrate along a X direction so that such an ion beam may be crossed.

  In the technique described in Patent Document 1, the conveyance speed of the glass substrate is constant. Since a uniform implantation amount distribution is realized over the entire surface of the glass substrate, the beam current density distribution of the ion beam irradiated on the glass substrate is 2 as shown in FIG. The entire region including the region where the ion beams are superimposed is adjusted so as to have a substantially uniform beam current density distribution along the Y direction.

JP 2009-152002 A (FIGS. 1, 3, and 6, paragraphs 0077 to 0088)

  In general, the adjustment of the beam current density distribution in the region where the ion beams are superimposed has a larger number of parameters to be adjusted than the adjustment of the beam current density distribution of one ion beam, It is complicated. If the adjustment is complicated, if the adjustment is a dark cloud, it will take a considerable amount of time to complete the adjustment. Further, if it takes time to adjust the beam current density distribution, there may be a problem that the throughput (processing capability) of the ion implantation apparatus is lowered.

  However, in Patent Document 1, the adjustment of the beam current density distribution in the region where the ion beam is superimposed is adjusted so as to be almost equal to the beam current density distribution in the other region (the region where the ion beam is not superimposed). There is only a description of the degree, and it has not been clarified as to how the adjustment can be made efficiently if it is specifically adjusted.

  Therefore, the present invention has been made to solve the above problems, and a control device for efficiently adjusting the beam current density distribution of each ion beam in a region where a plurality of ion beams are superimposed. The main objective is to provide an ion implantation apparatus provided and a beam current density distribution adjusting method used in the ion implantation apparatus.

  In other words, an ion implantation apparatus according to the present invention is arranged in a processing chamber and m ion beam supply apparatuses for supplying m (m is an integer of 2 or more) ribbon-like ion beams, and the m ribbon-forms are provided. A beam profiler that individually measures the beam current density distribution in the long side direction of the ion beam, and a beam that is individually provided for each ion beam supply device and that adjusts the beam current density distribution measured by the beam profiler. A current density distribution adjusting member, a glass substrate transport mechanism for transporting the glass substrate so as to intersect the long side direction of the m ribbon-shaped ion beams in the processing chamber, and the beam current density distribution adjusting member. The irradiation area by the m ribbon-like ion beams is reduced on the glass substrate transported by the glass substrate transport mechanism. A control device that realizes a predetermined implantation dose distribution that is at least partially overlapped with the ion implantation device, wherein the control device applies to the m ribbon-like ion beams. A function for individually setting a target distribution as an adjustment target of the beam current density distribution, and a first tolerance for the target distribution set for each ribbon ion beam according to a predetermined order. The function of controlling the beam current density distribution of the ribbon ion beam up to the (m-1) th to be within the range and the adjusted beam current density distribution of the ribbon ion beam up to the (m-1) th are added together. According to the difference between the beam current density distribution and the beam current density distribution obtained by adding the target distributions set for the m-th ribbon ion beam, the m-th ribbon shape. A new target distribution for adjusting the beam current density distribution of the on-beam is set, and the m is set so that the new target distribution falls within a second allowable range smaller than the first allowable range. And a function of controlling the beam current density distribution of the main beam.

  The beam current density distribution adjusting method according to the present invention includes m ion beam supply devices that supply m (m is an integer of 2 or more) ribbon-shaped ion beams, a m treatment unit disposed in a processing chamber, A beam profiler that individually measures the beam current density distribution in the long side direction of the ribbon-shaped ion beam and a beam profiler that is individually provided for each of the ion beam supply devices and adjusts the beam current density distribution measured by the beam profiler. An ion implantation apparatus comprising: a beam current density distribution adjusting member for adjusting a glass substrate; and a glass substrate transport mechanism configured to transport a glass substrate so as to intersect with a long side direction of the m ribbon-shaped ion beams in the processing chamber. The m pieces are formed on the glass substrate transported by the glass substrate transport mechanism using the beam current density distribution adjusting member. A method of adjusting the beam current density distribution of each ion beam in order to realize a predetermined implantation dose distribution determined in advance by at least partially overlapping irradiation regions with ribbon-like ion beams, A step of individually setting a target distribution as an adjustment target of the beam current density distribution for each ribbon-shaped ion beam, and the target set for each ribbon-shaped ion beam according to a predetermined order Adjusting the beam current density distribution of the ribbon-like ion beam up to the (m-1) th to be within a first allowable range with respect to the distribution, and adjusting the ribbon-like ion beam to the (m-1) th A beam current density distribution obtained by adding up the beam current density distribution and a target distribution set for the ribbon ion beam up to the m-th beam are added up. A new target distribution for adjusting the beam current density distribution of the m-th ribbon ion beam is set according to the difference from the current density distribution, and the first tolerance is set for the new target distribution. And a step of adjusting the m-th beam current density distribution so as to fall within a second allowable range smaller than the range.

  With such a configuration, it is possible to efficiently adjust the beam current density distribution of each ion beam in a region where a plurality of ion beams are superimposed.

  For example, in the ion implantation apparatus, the control device adjusts the beam current density distribution of the n-th ribbon-shaped ion beam (n is an integer, 2 ≦ n ≦ m−1), and then adjusts each beam up to the n-th beam. The difference between the beam current density distribution obtained by adding up the adjustment results of the current density distribution and the beam current density distribution obtained by adding up the target distribution set for each of the n-th ribbon ion beams is the first allowable range. A function of determining whether or not the third allowable range is wider, and if not within the third allowable range, readjust the beam current density distribution for the n-th ion beam so as to be within the range. And a device further provided with a function.

  On the other hand, in the ion implantation apparatus, the control device adjusts the beam current density distribution of the n-th ribbon-shaped ion beam (n is an integer, 1 ≦ n ≦ m−1), and then each ribbon up to the n-th ribbon. The difference between the beam current density distribution obtained by adding the adjustment results of the beam current density distributions of the ion beam and the beam current density distribution obtained by adding the target distributions set for the n-th ribbon ion beams is A function for determining whether or not the current value is within the allowable range of 3, and a function for readjusting the beam current density distribution for the n-th ion beam so as to be within the range if not within the third allowable range. Furthermore, the apparatus provided may be sufficient.

  Further, the beam current density distribution adjusting method includes adjusting the beam current density distribution of the n-th ribbon-shaped ion beam (n is an integer, 2 ≦ n ≦ m−1) and then adjusting each beam current density up to the n-th beam current density. The difference between the beam current density distribution obtained by adding up the distribution adjustment results and the beam current density distribution obtained by adding up the target distributions set for each of the n-th ribbon-shaped ion beams is greater than the first allowable range. Determining whether it is within a wide third allowable range; and, if not within the third allowable range, re-adjusting the beam current density distribution for the n-th ion beam so as to be within the range; , May be further included.

  On the other hand, in the beam current density distribution adjusting method, after adjusting the beam current density distribution of the n-th ribbon-shaped ion beam (n is an integer, 1 ≦ n ≦ m−1), each ribbon-shaped ion up to the n-th is obtained. The difference between the beam current density distribution obtained by adding the adjustment results of the beam current density distributions of the beams and the beam current density distribution obtained by adding the target distributions set for the n-th ribbon-shaped ion beams is the third value. A step of determining whether or not it is within the allowable range; and a step of readjusting the beam current density distribution for the n-th ion beam so as to be within the range if not within the third allowable range. You may do it.

  In the case of the ion implantation apparatus and the beam current density distribution adjusting method having the above-described configuration, even when the number of ion beams is increased, m−1 from the first is applied when adjusting the beam current density distribution of the mth ion beam. The amount of deviation from the target distribution generated when adjusting the beam current density distribution performed on the ion beam up to now can be compensated without any problem.

    With such a configuration, it is possible to efficiently adjust the beam current density distribution of each ion beam in a region where a plurality of ion beams are superimposed.

It is a top view which shows the ion implantation apparatus which concerns on one Example of this invention. It is a top view when the inside of the processing chamber of FIG. 1 is seen from the Z direction. It is explanatory drawing about the rough adjustment of the beam current density distribution which concerns on one Example of this invention. It is explanatory drawing about fine adjustment of the beam current density distribution which concerns on one Example of this invention. 5 is a flowchart relating to a method for adjusting a beam current density distribution according to an embodiment of the present invention. It is an example of the beam current density distribution in the 1st-3rd ion beam described in FIG. The mode that the beam current density distribution of the 1st-3rd ion beam of FIG. 6 was added is shown. An example of the beam current density distribution in the 4th ion beam of FIG. 1 is shown. It is a flowchart regarding the adjustment method of the beam current density distribution which concerns on the other Example of this invention, and follows A described in the flowchart of FIG. It is a flowchart regarding the adjustment method of the beam current density distribution which concerns on the other Example of this invention, and is a continuation from A as described in the flowchart of FIG. 12 is a flowchart relating to a method for adjusting a beam current density distribution according to a further embodiment of the present invention, and continues to A described in the flowchart of FIG. FIG. 12 is a flowchart relating to a method for adjusting a beam current density distribution according to a further embodiment of the present invention, and is a continuation from A described in the flowchart of FIG.

  FIG. 1 is a plan view showing an embodiment of an ion implantation apparatus 1 according to the present invention, and FIG. 2 is a plan view when the inside of the processing chamber of FIG. 1 is viewed from the Z direction. The overall configuration of an ion implantation apparatus according to an embodiment of the present invention will be described with reference to these drawings.

  In this invention, the X direction is the substrate transport direction, the Y direction is the long side direction of the ion beam, and the Z direction is the traveling direction of the ion beam irradiated to the glass substrate in the processing chamber, and these directions are orthogonal to each other. . In the present invention, the ribbon-like ion beam refers to an ion beam having a substantially rectangular cross section when the ion beam is cut along a plane orthogonal to the traveling direction of the ion beam.

  An ion implantation apparatus 1 shown in FIG. 1 includes a first ion beam supply apparatus 2, a second ion beam supply apparatus 12, a third ion beam supply apparatus 32, which are mainly surrounded by a processing chamber 11 and an alternate long and short dash line. The fourth ion beam supply device 42 is configured. The first to fourth ion beam supply apparatuses supply the first ion beam 6, the second ion beam 16, the third ion beam 36, and the fourth ion beam 46 into the processing chamber 11, respectively. Device.

  An ion beam supply apparatus will be briefly described. The ion sources (3, 13, 33, 43), mass analysis magnets (4, 14, 34, 44) and analysis slits (5, 15, 35, 45) constituting the first to fourth ion beam supply devices are , Supply devices with the same performance may be used, or supply devices with different performances may be used. Here, the configuration of the first ion beam supply apparatus 2 will be described as a representative, and the description of the other supply apparatuses will be omitted since it is redundant.

  The first ion beam supply device 2 includes an ion source 3, and the first ion beam 6 is extracted from the ion source 3. Various ions are mixed in the first ion beam 6 extracted from the ion source 3. Among these, in order to irradiate the glass substrate 10 with only desired ions, the mass analysis magnet 4 and the analysis slit 5 cooperate to separate desired ions from other ions. This separation is performed by adjusting the deflection amount of the first ion beam at the mass analysis magnet 4 so that only desired ions can pass through the analysis slit 5 by utilizing the difference in mass number for each ion. .

  The beam current density distribution in the long side direction (Y direction) of the first ion beam 6 supplied from the first ion beam supply apparatus 2 is measured by a beam profiler 7 provided in the processing chamber 11. As an example of this beam profiler, it is conceivable to use a multi-point Faraday cup in which a plurality of known Faraday cups are arranged along the Y direction, or a single Faraday cup movable along the Y direction.

  In the above description, a supply device having a configuration including a mass analysis magnet and an analysis slit has been described as an ion beam supply device.

  As an example, the conveyance of the glass substrate is performed as follows.

  The gate valve 20 located on the atmosphere side of the first vacuum preliminary chamber 22 is opened. Thereafter, the glass substrate 10 is carried into the first vacuum preliminary chamber 22 by a transfer robot (not shown) provided on the atmosphere side. At this time, the gate valve 18 positioned between the first vacuum preliminary chamber 22 and the processing chamber 11 is closed so that the processing chamber 11 side is not opened to the atmosphere.

  After the glass substrate 10 is carried into the first vacuum preliminary chamber 22, the gate valve 20 is closed, and the vacuum degree inside the first vacuum preliminary chamber 22 is the same as that of the processing chamber 11 by a vacuum pump (not shown). It is evacuated until (pressure) is reached.

  After the degree of vacuum in the first vacuum preparatory chamber 22 becomes approximately the same as that in the processing chamber 11, the gate valve 18 is opened. Then, the glass substrate 10 is carried into the processing chamber 11 and is transported in the processing chamber so as to cross the first ion beam 6 and the second ion beam 16 in the direction indicated by the arrow A. Thereby, the ion implantation process to the glass substrate 10 is achieved.

  Thereafter, the glass substrate 10 passes through the gate valve 19 and is carried into the second vacuum preliminary chamber 23. Here, it is assumed that the gate valve 19 is opened at an appropriate timing during the ion implantation process to the glass substrate 10 in the processing chamber 11 or after the ion implantation process.

  After the carry-in of the glass substrate 10 into the second vacuum preliminary chamber 23 is completed, the gate valve 19 is closed. At this time, the gate valve 21 located on the atmosphere side of the second vacuum preliminary chamber 23 is closed. Then, after the second vacuum preparatory chamber 23 is sealed, the pressure of the second vacuum preparatory chamber 23 is adjusted by a vacuum pump (not shown) until the indoor atmosphere becomes approximately the same as the atmospheric pressure.

  After the interior of the second vacuum preparatory chamber 23 is at atmospheric pressure, the gate valve 21 is opened, and the glass substrate 10 is carried out to the atmosphere side by a transfer robot (not shown) provided on the atmosphere side.

  FIG. 2 is a plan view when the inside of the processing chamber 11 of FIG. 1 is viewed from the Z direction.

  As an example of the transport mechanism for the glass substrate 10, as shown in FIG. 2, a wheel is provided on the lower surface of the holder 24 that holds the glass substrate 10, and these wheels are the first and second vacuum preliminary chambers 22, 23. The holder 24 can be moved along the X direction by rolling on a rail (not shown) disposed in the processing chamber 11. In this case, a power source for moving the holder 24 such as a motor is prepared separately. In consideration of the reciprocal conveyance of the glass substrate 10, it is desirable to have a configuration capable of forward and reverse rotation if the power source is a motor.

  In the Y direction, the first to fourth ion beams have dimensions longer than that of the glass substrate 10. Therefore, when the glass substrate 10 is transferred from the first vacuum preliminary chamber 22 to the second vacuum preliminary chamber 23 in the direction of arrow A shown in FIG. 2, irradiation with each ion beam is performed on the entire surface of the glass substrate. The areas are overlaid. Note that the broken lines surrounding each of the first to fourth ion beams shown in FIG. 2 indicate supply paths (beam lines) for supplying the ion beams from the respective ion beam supply apparatuses into the processing chamber 11. The outer shape is shown.

  In the ion implantation process, the distribution of the ion implantation amount formed on the glass substrate 10, the current density distribution of the ion beam, and the conveyance speed of the glass substrate are closely related to each other. Generally speaking, the ion implantation amount (also referred to as the dose amount) is proportional to the current density of the ion beam (sometimes expressed by the current amount), and the object to be irradiated (here, the glass substrate) crosses the ion beam. It is inversely proportional to the speed.

  For example, the goal is to make the distribution of ion implantation amounts formed over the entire surface of the glass substrate 10 substantially uniform. When the transport speed of the glass substrate 10 is constant, if the beam current density distribution of the ion beam in the direction orthogonal to the transport direction is made substantially uniform, the distribution of the ion implantation amount over the entire surface of the glass substrate becomes substantially uniform. .

  More specifically, in order to make the distribution of the ion implantation amount substantially uniform over the entire surface of the glass substrate, when the glass substrate 10 moves at a constant speed along the short side direction of the ion beam in FIG. The beam current density distribution in the long side direction of the beam may be made substantially uniform. In this case, the beam current density distribution in the short side direction of the ion beam may not be uniform. The unevenness (non-uniformity) of the beam current density distribution in the short side direction of the ion beam that is substantially coincident with the transport direction of the glass substrate 10 is integrated with the transport of the glass substrate. Therefore, even if there is unevenness, since a certain amount of implantation is finally performed in the short side direction of the ion beam, the uniformity of the beam current density in the short side direction of the ion beam is There is no need to consider.

  In addition, when the glass substrate 10 is transported, the beam current density distribution at both ends of the ion beam that is not irradiated onto the glass substrate is irrelevant to the implantation amount distribution on the glass substrate. It doesn't matter.

  In the example of FIG. 2, the glass substrate is transported so as to be orthogonal to the long side direction of the ion beam, but the direction of transporting the glass substrate is not necessarily orthogonal. For example, even when the glass substrate is transported in a substantially orthogonal direction, it is possible to realize ion implantation processing within an allowable range set for a predetermined implantation amount distribution formed on the glass substrate. is there. In consideration of the allowable range of the implantation amount distribution formed on the glass substrate, it is determined how much the tilted conveyance of the ion beam with respect to the long side direction is allowed. Considering this, in the present invention, the direction in which the glass substrate is transported is set to intersect the long side direction of the ion beam.

  Next, a method for adjusting the beam current density described above will be described.

  For adjustment of the beam current density distribution in each ion beam supply device, for example, an ion source having a multifilament as known in the art is used to increase or decrease the amount of current flowing through the filament.

  Specifically, the ion source of the ion beam supply apparatus shown in FIG. 1 is a multifilament type ion source in which a plurality of filaments are arranged in the Y direction. After that, the measurement region of the ion beam in the Y direction by the beam profiler is associated with the filament provided in each ion source.

  Here, for example, when the beam profiler is composed of 16 Faraday cups, the beam profiler is divided into four regions composed of 4 Faraday cups, and filaments are formed for each region. This means that one wire (in each ion source, there are four filaments in total along the Y direction) is associated.

  FIGS. 3 and 4 show the filament and the Faraday cup having the above-mentioned correspondence relation. In the figure, the vertical axis represents the beam current density, the horizontal axis is the Y direction, the dimension between O1 and O2 coincides with the dimension of the glass substrate, and the origin O is one end of the ion beam in the Y direction. Is consistent with The settings for the vertical axis and the horizontal axis are the same in FIGS. In such a configuration, the adjustment of the beam current density distribution is performed in two stages such as coarse adjustment and fine adjustment.

  In adjusting the beam current density distribution, a distribution to be adjusted (a value in the case of a uniform distribution) and a predetermined allowable range (2ε) are provided around the distribution. The amount of current flowing through the filament corresponding to each region is increased or decreased so as to be within the range.

  For example, when the amount of current flowing through each filament is uniformly increased, the beam current density distribution D in FIG. 3 translates in the direction in which the beam current density increases. Conversely, when the amount of current flowing through each filament is uniformly reduced, the beam current density distribution D in FIG. 3 translates in the direction in which the beam current density decreases.

  The target distribution shown in FIG. 3 is a uniform distribution. For example, the current beam current density distribution (D) is averaged in the Y direction, and the amount of current flowing through each filament is uniformly increased so that the averaged beam current density distribution approximately matches the target distribution. Do. As a result, the distribution shown by D1 is obtained. In this case, since D1 is within an allowable range with respect to the target distribution, adjustment of the beam current density distribution is completed.

  As described above, the operation of increasing and decreasing the beam current density distribution by uniformly increasing / decreasing the amount of current flowing through each filament is called coarse adjustment.

  On the other hand, even if the above-described rough adjustment is performed, the beam current density distribution may still not be within the allowable range set for the target distribution. In this case, fine adjustment is performed subsequent to the coarse adjustment in order to fall within the allowable range. FIG. 4 illustrates this situation.

  The beam current density distribution shown in FIG. 4 exceeds the allowable range in the region 1 and falls below the allowable range in the region 3. Therefore, the amount of current flowing through the filament corresponding to region 1 is reduced, and the amount of current flowing through the filament corresponding to region 3 is increased. At this time, the current flowing through the filament is changed in small increments or continuously. In this way, an operation of gradually bringing the overall beam current density distribution closer to the target value is performed. In this way, an operation for adjusting the amount of current flowing through the filament in each region corresponds to fine adjustment.

  The beam current density distribution may be adjusted by using the following adjustment method in addition to the adjustment method using the coarse adjustment and the fine adjustment as described above.

  When adjusting the beam current density distribution, the amount of current flowing through the filament is adjusted while monitoring the beam current density distribution with a beam profiler. When the amount of deviation between the target distribution and the actually measured distribution is large, it takes time to adjust if the amount of current flowing through the filament is changed in small increments or continuously. Therefore, in such a case, change is made in a certain large increment. Thus, the degree of adjustment (whether fine adjustment or coarse adjustment) is made by changing the increment of the amount of current flowing through the filament in accordance with the amount of deviation between the target distribution and the actually measured distribution. It is conceivable to use properly.

  When the allowable range set for the target distribution is wide, the beam current can only be adjusted by coarse adjustment that raises or lowers the entire beam current density distribution, or by a coarse adjustment method that switches the amount of current flowing through the filament in large increments. The adjustment of the density distribution can be finished. On the other hand, when the allowable range is narrow, further adjustment is necessary by performing fine adjustment subsequent to the coarse adjustment, or adjusting the amount of current flowing through the filament in small increments. When such additional adjustment is involved, it takes time to adjust the beam current density distribution. Therefore, in the present invention, when the beam current density distribution is adjusted for a plurality of ion beams, a fine adjustment that requires time for adjustment as much as possible can be avoided.

  Hereinafter, an embodiment of the beam current density distribution adjusting method according to the present invention will be described in detail.

  FIG. 5 is a flowchart showing a beam current density distribution adjusting method according to an embodiment of the present invention, and the processing shown in this flowchart is performed by the control device 25 shown in FIG. In this embodiment, the number of ion beams handled by the ion implantation apparatus is m (m is an integer of 2 or more).

  First, at step 50, target beam current density distributions (I1, I2,... Im) are individually set for m ion beams. More specifically, the operator of the ion implantation apparatus 1 sets ion implantation conditions via the user interface 26 shown in FIG. At this time, the set ion implantation conditions are transmitted to the control device 25. As the implantation conditions, various conditions such as ion beam energy, implantation amount distribution, implantation angle of the ion beam to the glass substrate, and conveyance speed of the glass substrate are set. Of these, in the present invention, the implantation amount distribution and We pay attention to the conveyance speed of the glass substrate.

  In the control device 25, the target distribution of the beam current density distribution for the ion beam supplied from each ion beam supply device is set based on the conveyance speed of the glass substrate 10 and the distribution of the implantation amount to the substrate.

  For example, it is assumed that a uniform ion implantation process is performed over the entire surface of the glass substrate 10 and the conveyance speed of the glass substrate when crossing each ion beam is constant. Then, the total distribution of the beam current density distribution when all the ion beams are superimposed can be derived by dividing the final target implantation amount distribution by the transport speed. If the number of ion beam supply apparatuses is four, the target distribution of the beam current density distribution for each ion beam, for example, the entire beam current density distribution is divided into quarters by each apparatus. May be set. Moreover, when there is a difference in the performance of the ion beam supply device, the ratio shared by each device may be changed according to the performance difference. In this way, the target beam current density distribution is set for the ion beam supplied from each ion beam supply apparatus.

  Next, in step 51, the initial value of n is set to 1. In this embodiment, n is an integer represented by 1 ≦ n ≦ m−1, and when the beam current density distribution of m ion beams is adjusted in order, the current for which ion beam is present. It shows whether the density distribution is adjusted.

  Regarding the order in which the current density distribution is adjusted, for example, an operator of the injection apparatus may be able to select the order before the adjustment. In FIG. 1, the beam current density distribution is adjusted in the order of the first, second, third and fourth ion beams.

  In step 52, the beam current density distribution of the n-th ion beam that is the current adjustment target is measured. However, prior to this measurement, it is assumed that the operation of the ion source is started and any ion beam is irradiated into the processing chamber 11.

  When starting the operation of the ion source, the amount of current flowing through each filament is set to an appropriate value in advance. If the ion source is a multifilament type ion source, the current flowing through each filament is set to an appropriate value in advance according to the target distribution of the beam current density distribution set in advance. In that case, data indicating the correlation between the beam current density distribution of the ion beam in the processing chamber and the amount of current flowing through each filament is stored in the control device 25 in advance. This data means that, for example, when the current amount of each filament is set to a specific value, the beam current density distribution of the ion beam irradiated into the processing chamber has a specific distribution. In the operation of the ion source, the value of the current amount to be set for each filament may be read from the data accumulated in the control device 25 based on the target beam current density distribution value. good. In this way, adjustment of the beam current density distribution becomes almost unnecessary. Therefore, the adjustment of the beam current density distribution can be completed quickly.

  On the other hand, it is conceivable to set the current amount for each filament to the same value at the start of operation of the ion source. In such a configuration, the amount of data stored in the control device 25 can be reduced as compared with the previous configuration, and accordingly, the memory capacity for storing data in the control device 25 is reduced accordingly. I can do it.

  In step 53, in response to the measurement result of the beam current density distribution in step 52, a difference between the measurement distribution (InM) and the target distribution (In) set by the control device 25 is calculated, and this difference is the first difference. A determination is made as to whether it is within the allowable range (−ε1 to + ε1). Here, although the upper limit value and the lower limit value of the first allowable range are the same, they are not necessarily the same. Different values may be used for the negative side and the positive side. The first permissible range is a sufficiently wide range, for example, a range that is ± 10 to 15% with respect to a target distribution when adjusting the current density distribution of each ion beam. It is possible. Of course, in the adjustment of the beam current density distribution in each ion beam, an allowable range set independently of the target distribution of each ion beam may be set individually for each ion beam. You may set it.

  If it is within the first tolerance, the process proceeds to step 55 where the value of n is incremented by one. On the other hand, if the difference between the measured distribution and the target distribution exceeds the first allowable range, in step 54, the adjustment of the beam current density distribution (InM) measured to be within the first allowable range is performed. Done. As a result of adjustment, when the value is changed to an appropriate value (InA) of the beam current density distribution, the value of n is incremented by one in step 55.

  In step 56, it is confirmed whether or not the ion beam to be adjusted next is the ion beam to be adjusted last. Next, when the ion beam to be adjusted is not the ion beam to be adjusted last, the process returns to step 52, and the measurement of the beam current density distribution of the ion beam to be adjusted next is performed.

  On the other hand, if the ion beam to be adjusted next is the ion beam to be adjusted last, the process proceeds to step 57, where the total value of various data regarding the ion beam whose beam current density distribution has been adjusted so far. Is calculated.

  There are three types of calculated total values. One is the sum of the measurement results of the beam current density distribution (Isum_m-1M) for the ion beam satisfying step 53 among the first to m−1 ion beams, and the other is the one. Of the ion beams from the first to the (m-1) th, the ion beam processed in step 54 is the sum of the adjustment results of the beam current density distribution (Isum_m-1A). The remaining one is the sum (Isum_m) of the target distributions of the beam current density distribution set individually for the first to m-th ion beams (all ion beams). Since Isum_m is a value calculated in advance when setting the target distribution for each ion beam in step 50, the operation for adding the target distributions for each ion beam is performed again here. There is no need. For example, if the value of Isum_m is already stored in the control device 25, the value may be read.

  FIG. 6 shows an example of a beam current density distribution for the first to third ion beams shown in FIG. For example, it is assumed that the beam current density distribution of the first ion beam has been adjusted through step 53, and the beam current density distribution of the second and third ion beams has been adjusted through step 54. To do. Further, it is assumed that the target distribution of each of the first to fourth ion beams shown in FIG. 1 is α, and a uniform implantation distribution of 4α is finally formed over the entire surface of the glass substrate.

  In such a case, Isum_m-1M mentioned above is the current density distribution of the first ion beam, and Isum_m-1A is the sum of the current density distributions of the second and third ion beams. And Isum_m is 4α.

  In step 58, the beam current density distribution (Im) to be adjusted is reset for the m-th (last) ion beam. As a specific example, a method for resetting the target distribution for the fourth ion beam 46 based on the beam current density distributions of the first to third ion beams shown in FIG. 6 will be described.

  The beam current density distributions for the first to third ion beams shown in FIG. 6 are (A) to (C), respectively. FIG. 7 shows the state of the beam current density distribution in which (A) to (C) are added. In FIG. 7, the region of 4α − ((A) + (B) + (C)) is hatched, and this region should be filled by adding the current density distribution of the fourth (last) ion beam. Represents an area.

  In FIG. 8, a beam current density distribution (D) for satisfying the hatching region of FIG. 7 is indicated by a one-dot chain line. For reference, the current density distribution of (A) + (B) + (C) -3α is shown by a solid line. The beam current density distribution obtained by adding (A) + (B) + (C) -3α and (D) indicated by the solid line is α. In this way, the total of the current density distributions of the ion beam from the first to the (m−1) th beam excluding the last ion beam (here, (A)). Based on the difference from (+ (B) + (C)), a new target distribution (D) of the fourth ion beam 46 is calculated. In addition, in the area | region (area | region which is not irradiated to a glass substrate) which protrudes between O1 and O2, new target distribution (D) does not necessarily need to be a distribution as shown in FIG.

  Finally, in step 59, the beam current density distribution for the last ion beam is adjusted. The adjustment here is performed so that ImA + Isum_m−1M + Isum_m−1A−Isum_m is within the second allowable range (−ε2 to + ε2) when the value of the beam current density distribution for the last ion beam is ImA. The Note that Isum_m-1M + Isum_m-1A-Isum_m is a negative value of the new target distribution set for the m-th ion beam, and eventually the beam current density of the ion beam that is finally adjusted It is sufficient that the distribution (ImA) is adjusted so as to fall within the second allowable range (−ε2 to + ε2) with respect to the new target distribution.

  Here, the second permissible range (−ε2 to + ε2) is based on the permissible range set for the distribution of a predetermined ion implantation amount implanted over the entire surface of the glass substrate and the conveyance speed of the glass substrate. It may be determined as follows. When the second allowable range is determined in this manner, the injection can be performed within the allowable range of the predetermined injection amount distribution. On the other hand, an appropriate value may be provided in advance as the second allowable range. For example, ± 1% to 3%. Then, when the beam current density distribution of the last ion beam is overlaid, the beam of the last ion beam is adjusted so that the entire beam current density distribution falls within a range of ± 1% to 3% with respect to the target distribution. The current density distribution may be adjusted. Further, similarly to the first allowable range, the upper limit and the lower limit of the second allowable range need not be the same value. Different values may be used for the negative side and the positive side.

  As described above, at the time of step 58, the target beam current density distribution for adjusting the last ion beam is changed from the one set in step 50 to a new target distribution. In the present invention, since the beam current density distribution of the last ion beam is adjusted using the new target distribution, the adjustment result generated at the time of adjusting the beam current density distribution of the ion beam until then is adjusted. And the target distribution can be compensated for. Thereby, a predetermined injection amount distribution can be achieved on the glass substrate.

  Further, as described above, the amount of deviation between the adjustment result and the target distribution generated when adjusting the beam current density distribution of the previous ion beam is compensated when adjusting the beam current density distribution in the final ion beam. Therefore, the adjustment of the beam current density distribution in the intermediate ion beam (from the first beam to the (m-1) beam) can be completed roughly. For example, the first allowable range for adjusting the beam current density distribution in the intermediate ion beam (from the first to the (m-1) th beam) is set to a wide range so that only the coarse adjustment described above can be performed. deep. This configuration shortens the overall adjustment time required to adjust the beam current density distribution of all ion beams, compared to the case where both coarse adjustment and fine adjustment are performed for each ion beam. It can be made.

  In an embodiment according to the present invention, it is possible to efficiently adjust the beam current density distribution in each ion beam by using the method as described above.

  9 and 10 show flowcharts according to another embodiment of the present invention. Compared with the flowchart shown in FIG. 5, a part of the flow is added to this flowchart. When the same processing as that described with reference to FIG. 5 is performed, the step numbers are the same. Hereinafter, the flow added in FIG. 9 and FIG. 10 will be described, and description of processing that overlaps with the flowchart in FIG. 5 will be omitted.

  The flow from the start of the process shown in FIG. After step 53 or step 54, in the flowchart of FIG. 9, it is determined in step 60 whether or not the ion beam to be adjusted is the second and subsequent ion beams. If the ion beam currently being adjusted is the first ion beam, the value of n is incremented by 1 in step 55, and then the process of step 52 is performed.

  In the case of the second and subsequent ion beams, the same processing as that shown as step 57 in the flowchart of FIG. 5 is performed. The difference is that in step 57 of FIG. 5, three types of total values are calculated for the ion beam in which the beam current density distribution is adjusted up to the (m−1) -th among m ion beams. In contrast, in step 61, three types of total values are calculated for the n-th ion beam (where n is 2 ≦ n ≦ m−1).

  That is, in step 61, the second and subsequent ion beams are subjected to a process of sequentially adjusting the ion beams and adding the results. This point is greatly different from the previous embodiment.

  In the previous embodiment, the current density distribution of the m-th (last) ion beam is adjusted to compensate for the deviation from the target distribution generated when the current density distribution of the ion beam up to the (m-1) th is adjusted. However, if the number of ion beams to be adjusted is large, such processing may not be successful.

  Except for the m-th (last) ion beam, the beam current density distribution is adjusted so as to fall within the first allowable range (−ε1 to + ε1) for each target distribution. The first allowable range is set to be wider so that the adjustment of the beam current density distribution in each ion beam can be quickly completed. For example, as described above, the range is set to be within a range of ± 10 to 15% with respect to the target distribution when the current density distribution of each ion beam is adjusted. Therefore, when the beam current density distribution is adjusted so as to satisfy this allowable range, there is a high possibility that the distribution is slightly deviated from the target distribution because it is set wider.

  For example, when the beam current density distribution in each ion beam is higher than the target distribution set individually, the target by each ion beam increases as the number of ion beams to be adjusted increases. The sum of the deviations from the distribution increases. In such a case, before adjusting the beam current density distribution in the last ion beam by the added deviation amount, the final target of the beam current density distribution achieved by superimposing all the ion beams is exceeded. It is possible to end up. In such a case, the last ion beam cannot be operated to compensate for the deviation from the target distribution generated when adjusting the current density distribution of the ion beam so far.

  Conversely, if the beam current density distribution of each ion beam is less than the target distribution set individually, the beam current density distribution of the last ion beam should be as large as possible. Even if the adjustment is performed, the result of adding the beam current density distributions of all the ion beams may not reach the target distribution. Then, it becomes impossible to achieve a predetermined ion implantation amount distribution on the glass substrate.

  In consideration of the above-described problems, the determination using the third allowable range (−ε3 to + ε3) is made in step 62 of FIG. In this embodiment, the third allowable range (−ε3 to + ε3) is a range larger than the first allowable range (−ε1 to + ε1). For example, a range that is increased by 50% of the first allowable range may be set as the third allowable range. Moreover, although the upper limit and the lower limit of the third allowable range are the same as the first and second allowable ranges, they are not necessarily the same. Different values may be used for the negative side and the positive side. By providing such a range setting, it is possible to limit the addition of the deviation amount from the target distribution, so even if the number of ion beams to be adjusted increases, finally, on the glass substrate It is possible to achieve a predetermined injection amount distribution.

  The upper and lower limits of the third allowable range may be set as follows, for example. When the beam current density distribution for the n-th ion beam (n is an integer, 2 ≦ n ≦ m−1) is adjusted, the upper limit is set to the target distribution (In + 1) for the n + 1-th ion beam. deep. If the upper limit is determined in this way, even when the current density distribution of a plurality of ion beams is adjusted in order, even if the deviation from the target distribution is added, the added amount is Next, the target distribution of the ion beam to be adjusted is not exceeded. Therefore, it is possible to prevent exceeding the final target of the beam current density distribution achieved by superimposing all the ion beams before adjusting the beam current density distribution in the last ion beam.

  On the other hand, regarding the lower limit, the maximum value of the range that can be adjusted by the beam current density distribution adjusting member provided in the ion beam supply device that supplies the (n + 1) th ion beam is set to Ax, the target for the (n + 1) th ion beam. When the distribution is In + 1, it should not be less than -Ax + In + 1. If the lower limit side is determined in this way, the target beam current density distribution can be achieved without problems when the beam current density distribution of the ion beam to be adjusted next is adjusted. Therefore, even if the beam current density distribution of the last ion beam is adjusted to be as large as possible, the sum of the current density distributions of all ion beams does not reach the target distribution. The problem will never occur.

  When the equation shown in step 62 is satisfied, the processes of steps 55, 56, 64, and 58 are sequentially performed as in the flowchart of FIG. 5, and the adjustment of the beam current density distribution for all the ion beams is completed. Note that step 57 described in the flowchart of FIG. 5 is replaced with step 64 in FIG. 10 because Isum_m−1M + Isum_m−1A−Isum_m−1 has already been calculated in step 60 of FIG. It is. As described with reference to FIG. 5, Isum_m is a value calculated in advance when setting the target distribution for each ion beam in step 50, so here again the target for each ion beam. There is no need to add the distributions. For example, if the value of Isum_m is already stored in the control device 25, the value may be read.

  If the equation shown in step 62 is not satisfied, the beam current density distribution of the ion beam currently being adjusted is readjusted in step 63 so that the equation in step 62 is satisfied. Note that the re-adjustment is described here because the ion beam currently targeted for adjustment has already been adjusted once through the previous step 53 or step 54. Further, in step 53, only the measurement result in step 52 is checked whether it is within the first allowable range (−ε1 to + ε1). Therefore, the beam current density distribution is adjusted even after the step. You might be told that this is not the case, but that is not the case. This point will be described here so that there is no misunderstanding. Prior to the measurement in step 52, when the ion source is operated and an ion beam is supplied into the processing chamber, a predetermined amount of current is passed through the filament as described above. Since the beam current density distribution obtained by this operation is adjusted to a predetermined value, step 53 (more precisely, the operation of the ion source performed before step 52) is performed without passing through step 54. At that time, it is assumed that the beam current density distribution has been adjusted once. This concept regarding the adjustment is similarly applied to the embodiment described with reference to the flowchart shown in FIG. 5 and further embodiments to be described later.

  After the current density distribution of the ion beam currently targeted for adjustment is readjusted in step 63, the processes in steps 55, 56, 64, 58, and 59 are sequentially performed, and the adjustment of the beam current density distribution is completed.

  In this way, the ion beam is sequentially applied using the third allowable range that limits the amount of deviation between the adjustment result of the beam current density distributions of the first to m−1th ion beams and the target distribution. As a result of the adjustment of the beam current density distribution of the ion beam, even if the number of ion beams to be adjusted is increased, an efficient beam current density distribution is obtained for each ion beam as in the previous embodiment. In addition to being able to adjust, a predetermined injection amount distribution can be realized on the glass substrate without any problem.

  11 and 12 show a flowchart according to a further embodiment of the present invention. Compared with the flowcharts shown in FIGS. 9 and 10, this flowchart is obtained by deleting the branch process at step 60 and the process at step 55 subsequent thereto. Therefore, the process of step 61 shown in FIG. 11 is sequentially performed from the first ion beam. In the previous embodiment, n in step 62 is 2 or more. In this embodiment, n is 1 or more. The other steps are the same as those in the flowcharts shown in FIGS. 9 and 10, and the description of each process is omitted.

  In this embodiment, any of the magnitude relationships between the first tolerance range and the third tolerance range may be large. In the previous example, the third allowable range is larger than the first allowable range. However, in this example, the reverse may be possible, and the first allowable range and the third allowable range may be used. May be the same. Of course, as in the previous example, the third allowable range may be set to be larger than the first allowable range.

  However, in terms of the overall processing time, it is desirable to set the third allowable range to be larger than the first allowable range. Even if the beam current density distribution of the ion beam is adjusted so as to satisfy the first allowable range in the processing of step 53 or step 54, if the first allowable range is larger than the third allowable range, The equation shown in the following step 62 may not be satisfied. In such a case, in step 63, there is a high possibility that the beam current density distribution needs to be adjusted again so as to fall within the third allowable range. This is because there is a possibility that the processing time required for the overall adjustment may take longer as the number of the number increases.

  However, although it may take some processing time, even if the method of the embodiment shown in the flowcharts shown in FIGS. 11 and 12 is used, it is the same as the embodiment shown in the flowcharts of FIGS. In addition, when the number of ion beams to be adjusted increases, the adjustment of the beam current density distribution for each ion beam can be performed without any problem.

<Other variations>
In FIG. 1, the conveyance direction of the glass substrate 10 in the processing chamber is illustrated as an arrow A, but it is not necessary to be limited thereto. For example, in order to inject more ions into the glass substrate 10, the glass substrate 10 may be reciprocated many times in the processing chamber 11. In this case, the glass substrate 10 is conveyed in the direction opposite to the arrow A.

  The first and second vacuum preliminary chambers 22 and 23 may be increased to a plurality. In this case, a plurality of gate valves 18 and 19 are provided in order to correspond to the respective vacuum preliminary chambers. In this way, the pressure adjustment in the plurality of first vacuum preliminary chambers and the plurality of second vacuum preliminary chambers can be performed separately. In addition, the glass substrate can be carried in and out using another vacuum preliminary chamber whose pressure has been adjusted. If such a configuration is used, the number of processed glass substrates can be increased.

  Further, the first vacuum preliminary chamber 22 and the second vacuum preliminary chamber 23 are paired in the substrate transport direction, and a plurality of sets are provided along the Z direction. Also, a plurality of glass substrate transport mechanisms are prepared in the Z direction so that the glass substrate 10 is individually transported through each vacuum preparatory chamber group. In addition, it is conceivable that the respective transport mechanisms are synchronized so that a plurality of glass substrates that are separated in the Z direction and are transported along the X direction cross each ion beam without interruption. In this way, since a plurality of glass substrates can be continuously processed, the number of processed glass substrates can be further increased. In this case, whether the vacuum preparatory chamber for carrying in / out the glass substrate 10 is the first vacuum preparatory chamber 22 or the second vacuum preparatory chamber 23 is individually set for each set of vacuum preparatory chambers. Just do it.

  In addition, although the processing chamber 11 is depicted as a single chamber in FIG. 1, the processing chamber may be divided into a plurality of portions corresponding to each ion beam supply apparatus. In this case, a gate valve for separating the processing chambers may be provided between the processing chambers. The gate valve is opened and closed according to the conveyance of the glass substrate 11.

  In the above-described embodiment, an ion implantation process using four ion beams having dimensions longer than the glass substrate 10 in the Y direction is described as an example, but the number of ion beams is not limited to this. . The number of ion beams may be two or more. Furthermore, as described in FIG. 3 of Patent Document 1 cited as the prior art of the present invention, the positions of the ion beams in the long side direction may be shifted from each other. Of course, the present invention is naturally applicable as long as ion implantation is performed by superimposing irradiation regions of the respective ion beams on the glass substrate 10.

  In the above-described embodiments, the ion source having a multifilament has been described as the beam current density distribution adjusting member, but another member may be used instead.

  Specifically, instead of a multifilament type ion source, an electric field lens or magnetic field lens that forms a different potential distribution or magnetic field distribution along the Y direction is provided in a supply path (beam line) for supplying an ion beam. Arrange it. In this case, the ion source may not be a multifilament type.

  Regarding the electric field lens, a configuration in which a pair of electrodes are provided so as to sandwich the ion beam from the short side direction, and there are a plurality of sets along the Y direction is conceivable. Then, according to the measurement result of the beam current density distribution by the beam profiler, the voltage applied to each group is varied to generate a potential difference between the electrode groups. Then, since the ion beam passing between the electrode sets arranged in the Y direction is moved locally along the Y direction according to the potential difference between the electrode sets, the current density of the ion beam in the Y direction. The distribution can be adjusted to approach a predetermined target distribution.

  Further, the magnetic lens may have a configuration in which a pair of magnetic poles are provided so as to sandwich the ion beam from the short side direction, and there are a plurality of pairs along the Y direction. The amount of current flowing through the coil wound around each magnetic pole group and its direction are made adjustable independently for each magnetic pole group. In addition, the current flowing through the coil wound around each magnetic pole group is independently adjusted according to the measurement result of the beam profiler. Then, the ion beam passing between a pair of magnetic poles constituting each magnetic pole set is moved locally along the Y direction according to the magnitude and direction of the magnetic field generated in each magnetic pole set. Therefore, the beam current density distribution of the ion beam in the Y direction can be adjusted so as to approach a predetermined target distribution.

  In addition, when the above-described electric field lens and magnetic field lens are used, the electric field and magnetic field are locally adjusted according to the measurement result by the beam profiler, but the idea is to use a multifilament type ion source. It can be considered in the same way as described as the method for adjusting the current density distribution. That is, a predetermined region of the beam profiler (if a plurality of Faraday cups are used as the beam profiler, the predetermined region may be specified by the number of Faraday cups) and a predetermined number of electrode sets or magnetic pole sets are associated with each other. It ’s fine. A method of switching the adjustment roughness in such an electric field lens and magnetic field lens (for example, depending on the amount of deviation from the target distribution, the adjustment step of the voltage applied to the electrode assembly and the amount of current flowing through the coil is changed from coarse to fine. By using a method such as switching, two types of adjustments can be performed: coarse adjustment of the beam current density distribution and fine adjustment as in the ion source having the multifilament described above. In addition, processing at the start of the ion source operation is also possible by setting the potential difference between each electrode set to a predetermined value, or setting the current amount and direction flowing through each coil to a predetermined value. What is necessary is just like the case of the ion source.

  Further, in the embodiments so far, an example of realizing a uniform ion implantation amount distribution over the entire surface of the glass substrate has been described. For example, as shown in FIG. 9 of JP-A-2005-235682, which is a known technique. As described above, the distribution of the injection amount may be varied along the conveyance direction of the glass substrate. Even if such an implantation amount distribution is used, the present invention can be applied when a predetermined implantation amount distribution is realized by superimposing ion beams.

  In addition, in the embodiments of the present invention, the conveyance speed of the glass substrate has been described as being constant, but the conveyance speed may be variable. For example, the conveyance speed of the glass substrate may be changed for each ion beam, or the ion beam may be varied according to a specific function while the glass substrate is traversing the ion beam. In addition, as known in the art, the current flowing through the multifilament is adjusted, the voltage applied to the electrode in the electric field lens is adjusted, the current passed through the coil of the magnetic lens is adjusted, The beam current density distribution in the long side direction of the beam may be adjusted so as to have an arbitrary non-uniform distribution. In the range which does not deviate from the gist of the present invention concerning the adjustment of the beam current density distribution when realizing the predetermined implantation dose distribution on the glass substrate by superimposing the irradiation regions on the glass substrate of the ion beam. Of course, any conveyance speed or current density distribution may be used.

  In addition to the above, it goes without saying that various improvements and modifications may be made without departing from the scope of the present invention.

1. Ion implantation apparatus 2. First ion beam supply device 6. First ion beam 10. Glass substrate 12. Second ion beam supply device 16. Second ion beam 25. Control device 32. Third ion beam supply device 36. Third ion beam 42. Fourth ion beam supply device 46. Fourth ion beam 7, 17, 37, 47. Beam profiler

Claims (6)

m ion beam supply devices for supplying m (m is an integer of 2 or more) ribbon-shaped ion beams;
A beam profiler that is disposed in a processing chamber and individually measures a beam current density distribution in the long side direction of the m ribbon-shaped ion beams;
A beam current density distribution adjusting member provided individually for each of the ion beam supply devices, for adjusting the beam current density distribution measured by the beam profiler;
A glass substrate transport mechanism for transporting the glass substrate so as to intersect the long side direction of the m ribbon-shaped ion beams in the processing chamber;
The beam current density distribution adjusting member is controlled, and the irradiation region by the m ribbon-like ion beams is at least partially overlapped on the glass substrate transported by the glass substrate transport mechanism, and predetermined. A control device that realizes a predetermined implantation amount distribution, and an ion implantation device comprising:
The control device individually sets a target distribution as an adjustment target of the beam current density distribution for the m ribbon-shaped ion beams;
According to a predetermined order, the beam currents of the ribbon-like ion beams up to m-1th so as to fall within a first allowable range with respect to the target distribution set for each ribbon-like ion beam. The ability to control the density distribution;
A beam current density obtained by adding a beam current density distribution obtained by adding up the adjusted beam current density distributions of the ribbon-like ion beam up to the (m-1) th and a target distribution set for the m-th ribbon-like ion beam. A new target distribution for adjusting the beam current density distribution of the m-th ribbon-like ion beam is set according to the difference from the distribution, and the new target distribution is set from the first allowable range. An ion implantation apparatus comprising: a function of controlling the m-th beam current density distribution so as to fall within a small second allowable range. Further, the control device adjusts the beam current density distribution of the n-th ribbon-shaped ion beam (n is an integer, 2 ≦ n ≦ m−1), and then adjusts the beam current density distribution up to the n-th. And a difference between the beam current density distribution obtained by adding up the target distributions set for each of the n-th ribbon-shaped ion beams is wider than the first allowable range. A function to determine whether it is within an allowable range;
2. The apparatus having a function of readjusting a beam current density distribution with respect to the n-th ion beam so as to be within the third allowable range when not within the third allowable range. Ion implantation equipment. Further, the control device adjusts the beam current density distribution of the n-th ribbon-shaped ion beam (n is an integer, 1 ≦ n ≦ m−1), and then the beam current of each ribbon-shaped ion beam up to the n-th. The difference between the beam current density distribution obtained by adding up the adjustment results of the density distribution and the beam current density distribution obtained by adding up the target distribution set for each n-th ribbon ion beam is within the third allowable range. A function to determine whether there is,
2. The apparatus having a function of readjusting a beam current density distribution with respect to the n-th ion beam so as to be within the third allowable range when not within the third allowable range. Ion implantation equipment. m ion beam supply devices for supplying m (m is an integer of 2 or more) ribbon-shaped ion beams;
A beam profiler that is disposed in a processing chamber and individually measures a beam current density distribution in the long side direction of the m ribbon-shaped ion beams;
A beam current density distribution adjusting member provided individually for each of the ion beam supply devices, for adjusting the beam current density distribution measured by the beam profiler;
A glass substrate transport mechanism for transporting a glass substrate so as to intersect the long side direction of the m ribbon-shaped ion beams in the processing chamber, wherein the beam current density distribution adjusting member is used. In order to realize a predetermined distribution of predetermined injection amount by at least partially superimposing irradiation areas of the m ribbon-like ion beams on the glass substrate transported by the glass substrate transport mechanism. And a method of adjusting the beam current density distribution of each ion beam,
Individually setting a target distribution as an adjustment target of the beam current density distribution for the m ribbon-shaped ion beams;
According to a predetermined order, the beam currents of the ribbon-like ion beams up to m-1th so as to fall within a first allowable range with respect to the target distribution set for each ribbon-like ion beam. Adjusting the density distribution;
A beam current density obtained by adding a beam current density distribution obtained by adding up the adjusted beam current density distributions of the ribbon-like ion beam up to the (m-1) th and a target distribution set for the m-th ribbon-like ion beam. A new target distribution for adjusting the beam current density distribution of the m-th ribbon-like ion beam is set according to the difference from the distribution, and the new target distribution is set from the first allowable range. Adjusting the m-th beam current density distribution so as to fall within a small second allowable range. After adjusting the beam current density distribution of the n-th ribbon-shaped ion beam (n is an integer, 2 ≦ n ≦ m−1), the beam current density distribution is obtained by adding the adjustment results of the beam current density distributions up to the n-th. And whether the difference between the beam current density distribution obtained by adding the target distributions set for each of the n-th ribbon-shaped ion beams is within a third allowable range wider than the first allowable range. A step of determining
5. The method according to claim 4, further comprising the step of re-adjusting the beam current density distribution for the n-th ion beam so as to be within the third allowable range if not within the third allowable range. Beam current density distribution adjustment method. After adjusting the beam current density distribution of the n-th ribbon-shaped ion beam (n is an integer, 1 ≦ n ≦ m−1), add the adjustment results of the beam current density distribution of each ribbon-shaped ion beam up to the n-th. Determining whether the difference between the beam current density distribution obtained and the beam current density distribution obtained by adding the target distributions set for the n-th ribbon ion beams is within a third allowable range. When,
5. The method according to claim 4, further comprising the step of re-adjusting the beam current density distribution for the n-th ion beam so as to be within the third allowable range if not within the third allowable range. Beam current density distribution adjustment method.