JP2011222627A - Semiconductor laser device and method for manufacturing the same - Google Patents

Semiconductor laser device and method for manufacturing the same Download PDF

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JP2011222627A
JP2011222627A JP2010087925A JP2010087925A JP2011222627A JP 2011222627 A JP2011222627 A JP 2011222627A JP 2010087925 A JP2010087925 A JP 2010087925A JP 2010087925 A JP2010087925 A JP 2010087925A JP 2011222627 A JP2011222627 A JP 2011222627A
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semiconductor laser
frame
solder
submount
laser device
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JP5644160B2 (en
JP2011222627A5 (en
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Yoshihiro Hisa
義浩 久
Hideyuki Tanaka
秀幸 田中
Masakazu Yashiro
正和 八代
Noriyoshi Yukinaga
則善 幸長
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to TW99147226A priority patent/TWI438991B/en
Priority to CN 201110083417 priority patent/CN102214894B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Semiconductor Lasers (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser device excellent in high temperature characteristics that can be easily manufactured at low cost, and also to provide a method for manufacturing the same.SOLUTION: A lead 3 is fixed to a frame 1 with mold resin 2. A submount 5 is joined to a frame 1 with solder 4, and a semiconductor laser chip 7 is joined to the submount 5 with solder 6. Since the frame 1 and the submount 5 are joined with the solder 4 as just described, heat dissipation can be improved. Also, the mold resin 2 has a heat resistant temperature higher than the melting point of the solders 4 and 6. Thus, the frame 1, the submount 5, and the semiconductor laser chip 7 can be joined to one another at the same time by heating the frame 1, the submount 5, and the semiconductor laser chip 7, as mounted, so as to melt the solders 4 and 6.

Description

本発明は、ＤＶＤドライブ、ＣＤドライブ、又はレーザＴＶ等に用いられる半導体レーザ装置及びその製造方法に関する。   The present invention relates to a semiconductor laser device used for a DVD drive, a CD drive, a laser TV, or the like, and a manufacturing method thereof.

製造コストが低い半導体レーザ装置として、モールド樹脂成型により製造されたモールドパッケージが用いられている（例えば、特許文献１参照）。従来のモールドパッケージでは、フレームにモールド樹脂によりリードが固定され、フレーム上にＡｇペースト又はエポキシ樹脂によりサブマウントが接合され、サブマウント上にＡｕＳｎ又はＳｎＡｇ半田により半導体レーザチップが接合されている。   A mold package manufactured by molding resin molding is used as a semiconductor laser device with a low manufacturing cost (see, for example, Patent Document 1). In a conventional mold package, a lead is fixed to a frame by a mold resin, a submount is bonded to the frame by Ag paste or epoxy resin, and a semiconductor laser chip is bonded to the submount by AuSn or SnAg solder.

従来のモールドパッケージの製造方法について説明する。まず、サブマウント上に半田により半導体レーザチップを接合する。次に、この半導体レーザを接合させたサブマウントをＡｇペーストによりフレーム上に接着し、ベークによりＡｇペーストの溶剤を蒸発させて固化する。次に、この蒸発させた溶剤によるパッケージ表面汚染を除去するためにＯ２プラズマ処理を行う。その後、ワイヤボンドを行い、複数の装置が並んだフレームから半導体レーザ装置を個片化し、検査工程に送る。 A conventional mold package manufacturing method will be described. First, a semiconductor laser chip is bonded onto the submount with solder. Next, the submount to which the semiconductor laser is bonded is bonded onto the frame with an Ag paste, and the solvent of the Ag paste is evaporated and solidified by baking. Next, O 2 plasma treatment is performed in order to remove the package surface contamination by the evaporated solvent. Thereafter, wire bonding is performed, and the semiconductor laser device is separated from a frame in which a plurality of devices are arranged, and sent to the inspection process.

特開２００３−３１８８５号公報JP 2003-31885 A 特開２００７−１９４７０号公報JP 2007-19470 A

従来の製造工程は複雑であったため、幾つもの製造装置を用いなければならず、各製造装置間のキャリアカセット移動のための要員も必要であった。カセット移動を自動化することもできるが、設備費用が膨大になる。また、Ａｇペーストやエポキシ樹脂は半田に比べて熱伝導が悪いために、素子の高温特性が劣化するという問題もあった。   Since the conventional manufacturing process was complicated, several manufacturing apparatuses had to be used, and personnel for moving the carrier cassette between the manufacturing apparatuses were also required. Although the cassette movement can be automated, the equipment cost is enormous. In addition, Ag paste and epoxy resin have a problem that the high temperature characteristics of the element deteriorate due to poor heat conduction compared to solder.

なお、ＣＡＮパッケージの製造方法として、サブマウントの上面と下面に半田を付け、フレーム上にサブマウントと半導体レーザチップを順次載せ、パッケージ全体を加熱して半田を溶融させて互いを同時に接合する方法が知られている（例えば、特許文献２参照）。硝子封止のＣＡＮパッケージは耐熱温度が４００℃以上あるため、このような製造方法が用いられる。しかし、モールドパッケージは樹脂部分があるために耐熱温度が非常に低い。従って、パッケージ全体を加熱する製造方法は用いられていなかった。   As a method of manufacturing the CAN package, solder is applied to the upper and lower surfaces of the submount, the submount and the semiconductor laser chip are sequentially placed on the frame, the entire package is heated, and the solder is melted to simultaneously bond each other. Is known (see, for example, Patent Document 2). Since the glass-sealed CAN package has a heat-resistant temperature of 400 ° C. or higher, such a manufacturing method is used. However, since the mold package has a resin portion, the heat resistant temperature is very low. Therefore, a manufacturing method for heating the entire package has not been used.

本発明は、上述のような課題を解決するためになされたもので、その目的は、安価で簡単に製造することができる高温特性に優れた半導体レーザ装置及びその製造方法を得るものである。   The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a semiconductor laser device excellent in high-temperature characteristics that can be manufactured inexpensively and easily, and a manufacturing method thereof.

本発明は、フレームと、前記フレームにモールド樹脂により固定されたリードと、前記フレーム上に、第１の半田により接合されたサブマウントと、前記サブマウント上に、第２の半田により接合された半導体レーザチップとを備え、前記モールド樹脂の耐熱温度は、前記第１及び第２の半田の融点よりも高いことを特徴とする半導体レーザ装置である。   The present invention includes a frame, a lead fixed to the frame by a mold resin, a submount bonded to the frame by a first solder, and a second solder on the submount. A semiconductor laser device comprising: a semiconductor laser chip, wherein a heat resistance temperature of the mold resin is higher than a melting point of the first and second solders.

本発明により、安価で簡単に製造することができる高温特性に優れた半導体レーザ装置及びその製造方法を得ることができる。   According to the present invention, it is possible to obtain a semiconductor laser device excellent in high temperature characteristics that can be easily manufactured at low cost, and a manufacturing method thereof.

実施の形態１に係る半導体レーザ装置を示す平面図である。1 is a plan view showing a semiconductor laser device according to a first embodiment. 実施の形態１に係る半導体レーザ装置を示す断面図である。1 is a cross-sectional view showing a semiconductor laser device according to a first embodiment. 実施の形態１に係る半導体レーザ装置の製造方法を説明するための平面図である。6 is a plan view for illustrating the method for manufacturing the semiconductor laser device according to the first embodiment. FIG. 実施の形態１に係る半導体レーザ装置の製造方法を説明するための断面図である。8 is a cross-sectional view for illustrating the method of manufacturing the semiconductor laser device according to the first embodiment. FIG. 実施の形態１に係る半導体レーザ装置の製造方法を説明するための平面図である。6 is a plan view for illustrating the method for manufacturing the semiconductor laser device according to the first embodiment. FIG. 実施の形態１に係る半導体レーザ装置の製造方法を説明するための平面図である。6 is a plan view for illustrating the method for manufacturing the semiconductor laser device according to the first embodiment. FIG. 実施の形態１に係る半導体レーザ装置の製造方法を説明するための断面図である。8 is a cross-sectional view for illustrating the method of manufacturing the semiconductor laser device according to the first embodiment. FIG. 実施の形態１に係る半導体レーザ装置の製造方法を説明するための平面図である。6 is a plan view for illustrating the method for manufacturing the semiconductor laser device according to the first embodiment. FIG. 実施の形態１に係る半導体レーザ装置の製造方法を説明するための平面図である。6 is a plan view for illustrating the method for manufacturing the semiconductor laser device according to the first embodiment. FIG. 比較例に係る半導体レーザ装置を示す断面図である。It is sectional drawing which shows the semiconductor laser apparatus which concerns on a comparative example. 実施の形態３に係る半導体レーザ装置を拡大した断面図である。FIG. 6 is an enlarged cross-sectional view of a semiconductor laser device according to a third embodiment. 実施の形態３に係る半導体レーザ装置を試作して信頼性試験を実施した結果を示す図である。It is a figure which shows the result of having prototyped the semiconductor laser apparatus which concerns on Embodiment 3, and implementing the reliability test. 実施の形態３に係る半導体レーザ装置を試作して信頼性試験を実施した結果を示す図である。It is a figure which shows the result of having prototyped the semiconductor laser apparatus which concerns on Embodiment 3, and implementing the reliability test. 実施の形態４に係る半導体レーザ装置を拡大した断面図である。FIG. 6 is an enlarged cross-sectional view of a semiconductor laser device according to a fourth embodiment.

本発明の実施の形態に係る半導体レーザ装置及びその製造方法について図面を参照して説明する。同じ構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。   A semiconductor laser device and a manufacturing method thereof according to an embodiment of the present invention will be described with reference to the drawings. The same components are denoted by the same reference numerals, and repeated description may be omitted.

実施の形態１．
図１は実施の形態１に係る半導体レーザ装置を示す平面図であり、図２はその断面図である。 Embodiment 1 FIG.
FIG. 1 is a plan view showing the semiconductor laser device according to the first embodiment, and FIG. 2 is a sectional view thereof.

フレーム１にモールド樹脂２によりリード３が固定されている。フレーム１上に、半田４（第１の半田）によりサブマウント５が接合されている。サブマウント５上に、半田６（第２の半田）により半導体レーザチップ７が接合されている。半導体レーザチップ７の上面とフレーム１がワイヤ８により接続され、リード３とサブマウント５上の配線がワイヤ９により接続されている。このサブマウント５の配線は半導体レーザチップ７の下面に接続されている。   Leads 3 are fixed to the frame 1 by mold resin 2. A submount 5 is joined to the frame 1 by solder 4 (first solder). A semiconductor laser chip 7 is bonded onto the submount 5 by solder 6 (second solder). The upper surface of the semiconductor laser chip 7 and the frame 1 are connected by a wire 8, and the lead 3 and the wiring on the submount 5 are connected by a wire 9. The wiring of the submount 5 is connected to the lower surface of the semiconductor laser chip 7.

モールド樹脂２は熱硬化性樹脂である。熱硬化性樹脂の耐熱温度は種類を選ぶと４００℃と高い。この温度に保った状態でモールド樹脂２に荷重を加えてもほとんど変形しない。   The mold resin 2 is a thermosetting resin. The heat-resistant temperature of the thermosetting resin is as high as 400 ° C. when the type is selected. Even when a load is applied to the mold resin 2 while maintaining this temperature, it hardly deforms.

半田４，６は、半導体レーザ装置において一般的に使用されるＡｕＳｎ系半田である。Ａｕ組成比が８０％のＡｕＳｎ半田の融点は２８０℃である。従って、モールド樹脂２の耐熱温度は、半田４，６の融点よりも高い。   Solders 4 and 6 are AuSn solders generally used in semiconductor laser devices. The melting point of AuSn solder having an Au composition ratio of 80% is 280 ° C. Accordingly, the heat resistant temperature of the mold resin 2 is higher than the melting point of the solders 4 and 6.

続いて、実施の形態１に係る半導体レーザ装置の製造方法について説明する。図３，５，６，８，９は実施の形態１に係る半導体レーザ装置の製造方法を説明するための平面図であり、図４，７はその断面図である。   Next, a method for manufacturing the semiconductor laser device according to the first embodiment will be described. 3, 5, 6, 8, and 9 are plan views for explaining the method of manufacturing the semiconductor laser device according to the first embodiment, and FIGS. 4 and 7 are sectional views thereof.

まず、フレーム１にプレス工程を行って、図３及び図４に示すように、フレーム１に抜きパターンを形成し、ダウンセットを設ける。   First, a pressing process is performed on the frame 1 to form a punching pattern on the frame 1 and to provide a downset as shown in FIGS.

次に、図５に示すように、フレーム１にリード３をモールド樹脂２により固定する。モールド樹脂２は熱硬化性樹脂である。熱硬化性樹脂は成型時の粘度が低いためにフレーム１上に薄いバリができる場合が多く、この薄いバリを除去するために成型後にブラスト処理を行う。この時にメッキにもダメージが入り、組立時のワイヤボンド未着不良に繋がる。そこで、安定なワイヤボンド性を実現するために、モールド樹脂２の成型後にフレーム１及びリード３のメッキを行う。その後、モールドパッケージを個片化する。   Next, as shown in FIG. 5, the lead 3 is fixed to the frame 1 with the mold resin 2. The mold resin 2 is a thermosetting resin. Since the thermosetting resin has a low viscosity at the time of molding, a thin burr is often formed on the frame 1, and a blasting process is performed after the molding in order to remove the thin burr. At this time, the plating is also damaged, leading to a failure to adhere the wire bond during assembly. Therefore, in order to realize stable wire bondability, the frame 1 and the lead 3 are plated after the molding resin 2 is molded. Thereafter, the mold package is separated into pieces.

次に、パッケージをサブマウント搭載ステージに移動させる。そして、図６及び図７に示すように、上面と下面にそれぞれ半田４と半田６を付けたサブマウント５を位置合わせしてフレーム１上に載せる。   Next, the package is moved to the submount mounting stage. Then, as shown in FIGS. 6 and 7, the submount 5 with the solder 4 and the solder 6 attached to the upper surface and the lower surface is aligned and placed on the frame 1.

次に、パッケージをダイボンドステージに移動させる。そして、図８に示すように、半導体レーザチップ７を位置合わせしてサブマウント５上に載せる。   Next, the package is moved to the die bond stage. Then, as shown in FIG. 8, the semiconductor laser chip 7 is aligned and placed on the submount 5.

その後、ダイボンドステージの温度を上げて、積載されたフレーム１、サブマウント５、及び半導体レーザチップ７を加熱して半田４，６を溶融させる。これにより、フレーム１上に半田４によりサブマウント５を接合し、サブマウント５上に半田６により半導体レーザチップ７を接合する。   Thereafter, the temperature of the die bond stage is raised and the loaded frame 1, submount 5 and semiconductor laser chip 7 are heated to melt the solder 4 and 6. As a result, the submount 5 is joined to the frame 1 by the solder 4, and the semiconductor laser chip 7 is joined to the submount 5 by the solder 6.

次に、パッケージをワイヤボンドステージに移動させる。そして、図９に示すように、半導体レーザチップ７とリード３とをワイヤ８により接続する。以上の工程により製造された半導体レーザ装置を収納トレイに納める。   Next, the package is moved to the wire bond stage. Then, as shown in FIG. 9, the semiconductor laser chip 7 and the lead 3 are connected by a wire 8. The semiconductor laser device manufactured by the above process is placed in a storage tray.

本実施の形態に係る半導体レーザ装置の効果について比較例と比較しながら説明する。図１０は、比較例に係る半導体レーザ装置を示す断面図である。比較例では、フレーム１とサブマウント５がＡｇペースト１０により接合されている。なお、Ａｇペースト１０の代わりにエポキシ樹脂を用いる場合もある。以下の表１に接合材の熱伝導率の一覧を示す。

Figure 2011222627
Ａｇペーストやエポキシ樹脂は半田に比べて熱伝導が悪いために、比較例では素子の高温特性が劣化する。 The effect of the semiconductor laser device according to the present embodiment will be described in comparison with a comparative example. FIG. 10 is a cross-sectional view showing a semiconductor laser device according to a comparative example. In the comparative example, the frame 1 and the submount 5 are joined by an Ag paste 10. An epoxy resin may be used in place of the Ag paste 10. Table 1 below shows a list of thermal conductivity of the bonding material.
Figure 2011222627
 Since Ag paste and epoxy resin have poor heat conduction compared to solder, the high-temperature characteristics of the device deteriorate in the comparative example.

一方、本実施の形態に係る半導体レーザ装置では、フレーム１とサブマウント５が半田４により接合されている。これにより、比較例に比べて放熱性を大幅に改善できる。発明者のシミュレーションよると、実際の実装形態及び使用状態において半導体レーザ装置のＡｇペーストをＳｎＡｇ又はＡｕＳｎ半田に変えることで、１℃以上から数℃程度まで高温特性を改善できることが分かっている。よって、実施の形態に係る半導体レーザ装置は高温特性に優れている。   On the other hand, in the semiconductor laser device according to the present embodiment, the frame 1 and the submount 5 are joined by the solder 4. Thereby, compared with a comparative example, heat dissipation can be improved significantly. According to the inventor's simulation, it has been found that the high-temperature characteristics can be improved from 1 ° C. or more to about several degrees C. by changing the Ag paste of the semiconductor laser device to SnAg or AuSn solder in the actual mounting form and usage state. Therefore, the semiconductor laser device according to the embodiment is excellent in high temperature characteristics.

また、本実施の形態に係る半導体レーザ装置では、耐熱温度が半田４，６の融点よりも高いモールド樹脂２を用いている。このため、積載されたフレーム１、サブマウント５、及び半導体レーザチップ７を加熱して半田４，６を溶融させて、フレーム１、サブマウント５、及び半導体レーザチップ７を互いに同時に接合することができる。そして、接着にＡｇペーストやエポキシ樹脂を使用しないので、ベーク炉は必要ない。さらに、溶剤汚染を除去するためのＯ２プラズマ処理も必要ない。よって、本実施の形態に係る半導体レーザ装置は、簡単に製造することができる。 In the semiconductor laser device according to the present embodiment, the mold resin 2 having a heat resistant temperature higher than the melting points of the solders 4 and 6 is used. For this reason, the mounted frame 1, submount 5 and semiconductor laser chip 7 are heated to melt the solders 4 and 6, and the frame 1, submount 5 and semiconductor laser chip 7 can be bonded simultaneously to each other. it can. And since no Ag paste or epoxy resin is used for bonding, a baking furnace is not necessary. Furthermore, O 2 plasma treatment for removing solvent contamination is not necessary. Therefore, the semiconductor laser device according to the present embodiment can be easily manufactured.

また、上記の図６〜図９の工程は、現在ＣＡＮパッケージ製品の生産で主流になっているダイボンド−ワイヤボンド一括製造装置で実施することができる。即ち、既存のＣＡＮパッケージ用の製造装置のホルダー部や搬送系を変更することでモールドパッケージもＣＡＮパッケージと同様に組立てられる。さらに、ＣＡＮよりもモールドパッケージの方がダイボンドを安定に行うことができる。   6 to 9 can be performed by a die bond-wire bond batch manufacturing apparatus which is currently mainstream in the production of CAN package products. That is, the mold package can be assembled in the same manner as the CAN package by changing the holder part and the transport system of the existing manufacturing apparatus for the CAN package. Further, die bonding can be performed more stably in the mold package than in CAN.

また、ＣＡＮパッケージの場合、アイレット外周部を加熱し、熱伝導により素子付け面を加熱する。しかし、クリアランスを確保するためにアイレット外径よりヒーター外径を若干大きくする必要があるため、アイレットの上面と下面のみがヒーターに接触し、アイレットの側面はほとんど接触しない。パッケージ寸法が小さくなると、この接触面積がほとんど確保できず、安定なダイボンド温度が得られない。一方、本実施の形態に係る半導体レーザ装置の場合、フレームの下部の平らな広い部分を加熱すればよいので、ヒーター形状が簡単になり、容易に安定性よく加熱できる。   In the case of a CAN package, the outer periphery of the eyelet is heated, and the element mounting surface is heated by heat conduction. However, since it is necessary to make the heater outer diameter slightly larger than the outer diameter of the eyelet in order to ensure clearance, only the upper and lower surfaces of the eyelet are in contact with the heater, and the side surfaces of the eyelet are hardly in contact. When the package size is reduced, this contact area can hardly be secured, and a stable die bonding temperature cannot be obtained. On the other hand, in the case of the semiconductor laser device according to the present embodiment, it is only necessary to heat a flat wide portion at the bottom of the frame, so that the shape of the heater is simplified and heating can be performed easily and stably.

また、従来のモールドパッケージの製造装置と本実施の形態に係るモールドパッケージの製造装置を比較すると、生産数が少ない場合は、本実施の形態の方が製造装置への投資費用が安い。生産数が増加するほど両者の差は小さくなる。しかし、本発明の適用製品は少量カスタム仕様の製品である。また、製品形状を変更する場合、従来のモールドパッケージの製造装置では全てのホルダー部を変更する必要があり、カスタム対応が難しく、かつコストもかかる。一方、本実施の形態では、一つの組立装置のホルダー形状を変更するだけでよい。よって、本実施の形態は、製造装置への投資費用を安くすることができる。   Further, when the conventional mold package manufacturing apparatus and the mold package manufacturing apparatus according to the present embodiment are compared, the investment cost to the manufacturing apparatus is lower in the present embodiment when the number of production is small. The difference between the two decreases as the number of production increases. However, the product to which the present invention is applied is a product with a small amount of custom specifications. In addition, when changing the product shape, it is necessary to change all the holder parts in the conventional mold package manufacturing apparatus, which makes custom handling difficult and costly. On the other hand, in this embodiment, it is only necessary to change the holder shape of one assembling apparatus. Therefore, this embodiment can reduce the investment cost to the manufacturing apparatus.

実施の形態２．
実施の形態２では、実施の形態１と異なり、モールド樹脂２は熱可塑性樹脂である。半田４，６はＳｎＡｇ半田である。フレーム１及びリード３の表面にメッキを形成した後に、プレスによりフレーム１にダウンセットを形成する。その他の構成は実施の形態１と同様である。 Embodiment 2. FIG.
In the second embodiment, unlike the first embodiment, the mold resin 2 is a thermoplastic resin. The solders 4 and 6 are SnAg solders. After the plating is formed on the surface of the frame 1 and the lead 3, a downset is formed on the frame 1 by pressing. Other configurations are the same as those of the first embodiment.

熱可塑性樹脂としてＬＣＰ樹脂（液晶ポリマー樹脂）を用いた場合、軟化温度は２８０℃程度で、変形が始まる温度は３５０℃程度である。従って、組立時にモールド樹脂２に負荷がかからないようなヒーター構造にしておく必要がある。   When an LCP resin (liquid crystal polymer resin) is used as the thermoplastic resin, the softening temperature is about 280 ° C., and the temperature at which deformation starts is about 350 ° C. Therefore, it is necessary to have a heater structure that does not apply a load to the mold resin 2 during assembly.

熱可塑性樹脂は、熱硬化性樹脂に比べて材料価格が安い。熱可塑性樹脂のモールド成型に要する時間（２０秒）は、熱硬化性樹脂のモールド成型に要する時間（２分）に比べて非常に短い。従って、樹脂単価も安く、スループットも高いため、装置単価を安価にできる。   Thermoplastic resins are less expensive than thermosetting resins. The time required for molding the thermoplastic resin (20 seconds) is much shorter than the time required for molding the thermosetting resin (2 minutes). Accordingly, the unit price of the apparatus can be reduced because the unit price of the resin is low and the throughput is high.

Ａｇの組成比が３％のＳｎＡｇ半田の融点は２２１℃である。従って、モールド樹脂２の軟化温度が半田４，６の融点よりも高いため、組立が非常に容易である。例えば、フレームパッケージを小型化した場合、組立時のつかみ代がないため、モールド樹脂２に治具が接触する。これに対して、低融点のＳｎＡｇ半田を用いることで組立温度を低くできるので、治具接触に伴うモールド樹脂２の変形を防止できる。   The melting point of SnAg solder having a composition ratio of Ag of 3% is 221 ° C. Therefore, since the softening temperature of the mold resin 2 is higher than the melting point of the solders 4 and 6, assembly is very easy. For example, when the frame package is reduced in size, there is no gripping allowance during assembly, so the jig contacts the mold resin 2. On the other hand, since the assembly temperature can be lowered by using the low melting point SnAg solder, the deformation of the mold resin 2 accompanying the jig contact can be prevented.

また、ＳｎＡｇ半田を用いれば、高価なＡｕを含むＡｕＳｎ半田を用いた場合に比べて、コストを大幅に削減できる。   Further, if SnAg solder is used, the cost can be greatly reduced as compared with the case where AuSn solder containing expensive Au is used.

ダウンセットを形成したフレーム１をフープ状態でメッキする場合、メッキ送り用のローラー形状をダウンセットを避ける構造にしなければならない。そして、フープ巻取り時に層間紙を入れてダウンセットが変形しないようにしなければならない。そこで、フレーム１及びリード３の表面にメッキを形成した後に、プレスによりフレーム１にダウンセットを形成する。これにより、フレーム１は平板であるためにメッキ送りローラーはいかなる形状のものでもいいし、メッキの膜厚を高精度に制御できる。また、部分メッキも容易に行え、メッキ材料の貴金属の使用量も削減できる。   When the frame 1 on which the downset is formed is plated in a hoop state, the roller shape for plating feeding must be structured to avoid the downset. And when winding the hoop, it is necessary to insert an interlayer paper so that the downset is not deformed. Therefore, after plating is formed on the surfaces of the frame 1 and the leads 3, a downset is formed on the frame 1 by pressing. Thereby, since the frame 1 is a flat plate, the plating feed roller may have any shape, and the thickness of the plating can be controlled with high accuracy. Also, partial plating can be easily performed, and the amount of noble metal used as a plating material can be reduced.

実施の形態３．
図１１は、実施の形態３に係る半導体レーザ装置を拡大した断面図である。サブマウント５と半導体レーザチップ７との接合部以外の構成は実施の形態１と同様である。 Embodiment 3 FIG.
FIG. 11 is an enlarged cross-sectional view of the semiconductor laser device according to the third embodiment. The configuration other than the junction between the submount 5 and the semiconductor laser chip 7 is the same as that of the first embodiment.

半導体レーザチップ７の表面の半田付け部にはＡｕメッキ層１１が形成されている。サブマウント５の表面にはバリアメタル１２が形成されている。半導体レーザチップ７は、ジャンクションダウンでＳｎＡｇ半田６によりサブマウント５に接合されている。   An Au plating layer 11 is formed on the soldered portion on the surface of the semiconductor laser chip 7. A barrier metal 12 is formed on the surface of the submount 5. The semiconductor laser chip 7 is joined to the submount 5 by SnAg solder 6 at junction down.

ここで、ＳｎＡｇ半田６とＡｕメッキ層１１が直接接触している場合、ＳｎＡｇ半田を融点温度（Ａｇ組成比が３％の場合、２２１℃）まで加熱すると、瞬時にＳｎＡｇとＡｕメッキが相互拡散し、０．１秒程度で融点温度が２８０℃以上に上昇して再凝固する。従って、十分な溶融時間を保持できないため、半田ヌレ不良等のトラブルに繋がる。また、加熱温度を２８０℃以上にすると半田は再び溶融するが、今度は熱可塑性モールド樹脂の軟化温度２８０℃を超えてしまい、モールドパッケージが変形してしまう。また、組立時の融点温度が高いほど、半導体レーザ動作温度での半田中の残留応力が大きくなり、素子の光学特性、特に偏光特性が悪化する。   Here, when the SnAg solder 6 and the Au plating layer 11 are in direct contact, when the SnAg solder is heated to the melting point temperature (221 ° C. when the Ag composition ratio is 3%), the SnAg and Au plating instantaneously diffuse each other. Then, in about 0.1 second, the melting point temperature rises to 280 ° C. or more and re-solidifies. Therefore, a sufficient melting time cannot be maintained, leading to troubles such as solder deficiency failure. Further, when the heating temperature is set to 280 ° C. or higher, the solder is melted again, but this time exceeds the softening temperature 280 ° C. of the thermoplastic mold resin, and the mold package is deformed. Further, the higher the melting point temperature at the time of assembly, the larger the residual stress in the solder at the semiconductor laser operating temperature, and the optical characteristics, particularly the polarization characteristics, of the device deteriorate.

そこで、本実施の形態では、半導体レーザチップ７のＡｕメッキ層１１とサブマウント５の半田４との間に高融点のＰｔ層１３（第１のＰｔ層）が設けている。これによりＡｕとＳｎＡｇの相互拡散を防止できる。従って、融点上昇が起きないので、ＳｎＡｇ半田６の融点を２２１℃に１秒以上の保持時間を容易に確保できる。これにより、半導体レーザチップ７の接合面全面に渡ってきれいな半田接合を得ることができる。   Therefore, in the present embodiment, a high melting point Pt layer 13 (first Pt layer) is provided between the Au plating layer 11 of the semiconductor laser chip 7 and the solder 4 of the submount 5. Thereby, mutual diffusion of Au and SnAg can be prevented. Accordingly, since the melting point does not rise, the melting time of the SnAg solder 6 can be easily secured at 221 ° C. for 1 second or longer. Thereby, a clean solder joint can be obtained over the entire joint surface of the semiconductor laser chip 7.

ここで、Ｐｔ層１３の厚みが不十分な場合、ＳｎＡｇ半田とＡｕが相互拡散し、一瞬にして融点が２８０℃以上になり、安定なダイボンドを実現できない。一方、Ｐｔ層１３が厚いほど形成時の材料の使用量が増え、かつ処理時間が長くなるため、コストアップに繋がる。さらに、Ｐｔ層１３の硬度が高いために、Ｐｔ層１３自身が応力原因になって素子の信頼性を低下させる。そこで、Ｐｔ層１３の厚みを１５０ｎｍ以上、３５０ｎｍ以下にする。この数値範囲について以下に詳細に説明する。   Here, when the thickness of the Pt layer 13 is insufficient, SnAg solder and Au are mutually diffused, and the melting point becomes 280 ° C. or higher instantaneously, so that stable die bonding cannot be realized. On the other hand, as the Pt layer 13 is thicker, the amount of material used at the time of formation increases and the processing time becomes longer, leading to an increase in cost. Furthermore, since the hardness of the Pt layer 13 is high, the Pt layer 13 itself causes a stress and decreases the reliability of the element. Therefore, the thickness of the Pt layer 13 is set to 150 nm or more and 350 nm or less. This numerical range will be described in detail below.

図１２及び図１３は、実施の形態３に係る半導体レーザ装置を試作して信頼性試験を実施した結果を示す図である。図１２は熱処理履歴に対するＤＶＤ部の偏光角（ＰＡ）の変化率を示し、図１３は熱処理履歴に対するＣＤ部の偏光角の変化率を示す。   FIG. 12 and FIG. 13 are diagrams showing the results of performing a reliability test by making a prototype of the semiconductor laser device according to the third embodiment. FIG. 12 shows the change rate of the polarization angle (PA) of the DVD part with respect to the heat treatment history, and FIG. 13 shows the change rate of the polarization angle of the CD part with respect to the heat treatment history.

まず、組立直後に偏光角を測定した。次に、１８０℃で２時間の高温保存の後に偏光角を測定した。次に、−４０℃〜＋１２５℃のヒートサイクル（ＨＣ）を行い、５０回目と２００回目で偏光角を測定した。なお、Ｐｔ層１３の厚みが１００ｎｍ、２００ｎｍ、３００ｎｍの場合についてそれぞれ測定を行った。   First, the polarization angle was measured immediately after assembly. Next, the polarization angle was measured after high-temperature storage at 180 ° C. for 2 hours. Next, a heat cycle (HC) of −40 ° C. to + 125 ° C. was performed, and the polarization angle was measured at the 50th and 200th times. In addition, it measured about the case where the thickness of Pt layer 13 is 100 nm, 200 nm, and 300 nm, respectively.

測定の結果、Ｐｔ層１３の厚みに関わらず、偏光角は、高温保存で悪化し、ヒートサイクルで改善することが分かった。Ｐｔ層１３の厚みが１００ｎｍの素子は高温保存及びＨＣによる変動が非常に大きい。Ｐｔ層１３の厚みが２００ｎｍの素子と３００ｎｍの素子は、ほぼ同じような変化傾向を示している。   As a result of the measurement, it was found that regardless of the thickness of the Pt layer 13, the polarization angle was deteriorated by high temperature storage and improved by heat cycle. An element having a Pt layer 13 having a thickness of 100 nm has a large variation due to high temperature storage and HC. An element having a Pt layer 13 having a thickness of 200 nm and an element having a thickness of 300 nm show almost the same change tendency.

Ｐｔ層１３の断面をＳＥＭで観察した結果、Ｐｔ層１３の厚みが１００ｎｍの素子では、Ｐｔ層１３が部分的に決壊していることが確認できた。Ｐｔ層１３の厚みが２００ｎｍの素子と３００ｎｍの素子はＰｔ層１３の決壊は確認されなかった。   As a result of observing the cross section of the Pt layer 13 with an SEM, it was confirmed that the Pt layer 13 was partially broken in an element having a Pt layer 13 thickness of 100 nm. No failure of the Pt layer 13 was confirmed in the element having a Pt layer 13 thickness of 200 nm and the element having a thickness of 300 nm.

これらの結果とＰｔ層１３の厚みの測定精度を考慮すると、Ｐｔ層１３の厚みを１５０ｎｍ以上とすることで、相互拡散を十分に防止できる。そして、Ｐｔ層１３の厚みを３５０ｎｍ以下とすることで、Ｐｔ層１３の応力による光学特性及び信頼性への悪影響を防ぐことができる。   Considering these results and the measurement accuracy of the thickness of the Pt layer 13, the mutual diffusion can be sufficiently prevented by setting the thickness of the Pt layer 13 to 150 nm or more. Then, by setting the thickness of the Pt layer 13 to 350 nm or less, it is possible to prevent an adverse effect on the optical characteristics and reliability due to the stress of the Pt layer 13.

実施の形態４．
図１４は、実施の形態４に係る半導体レーザ装置を拡大した断面図である。サブマウント５以外の構成は実施の形態２と同様である。 Embodiment 4 FIG.
FIG. 14 is an enlarged cross-sectional view of the semiconductor laser device according to the fourth embodiment. The configuration other than the submount 5 is the same as that of the second embodiment.

サブマウント５の表面にＴｉ層１４（高融点金属層）が形成されている。Ｔｉ層１４上にＰｔ層１５（第２のＰｔ層）が形成されている。半田４，６はＳｎＡｇ半田である。Ｐｔ層１５が半田４，６に接する。   A Ti layer 14 (refractory metal layer) is formed on the surface of the submount 5. A Pt layer 15 (second Pt layer) is formed on the Ti layer 14. The solders 4 and 6 are SnAg solders. The Pt layer 15 is in contact with the solders 4 and 6.

一般にコスト低減のために貴金属のＰｔ層をＮｉ層に変える場合がある。半田がＡｕＳｎ半田の場合、Ｐｔ層１３，１５をＮｉ層に変えても半田の溶融時間が極端に長くならない。しかし、ＳｎＡｇ半田を使用した場合、半田溶融と同時にＮｉ層が拡散し融点が若干下がるが、Ｔｉ層も拡散し瞬時に融点が上昇してしまう。この拡散の速度は非常に速く、正常な半田接合を得るための溶融保持時間１秒以上を確保できない。従って、ＳｎＡｇ半田を使用する場合はＴｉ層１４のバリア層としてＰｔ層１５を用いる必要がある。   In general, the Pt layer of noble metal may be changed to a Ni layer for cost reduction. When the solder is AuSn solder, the melting time of the solder does not become extremely long even if the Pt layers 13 and 15 are changed to Ni layers. However, when SnAg solder is used, the Ni layer diffuses simultaneously with the melting of the solder and the melting point slightly decreases, but the Ti layer also diffuses and the melting point increases instantaneously. The diffusion speed is very high, and it is impossible to secure a melt holding time of 1 second or more for obtaining a normal solder joint. Therefore, when SnAg solder is used, it is necessary to use the Pt layer 15 as a barrier layer of the Ti layer 14.

１ フレーム
２ モールド樹脂
３ リード
４ 半田（第１の半田）
５ サブマウント
６ 半田（第１の半田）
７ 半導体レーザチップ
１１ Ａｕメッキ層
１３ Ｐｔ層（第１のＰｔ層）
１４ Ｔｉ層（高融点金属層）
１５ Ｐｔ層（第２のＰｔ層） 1 Frame 2 Mold resin 3 Lead 4 Solder (first solder)
5 Submount 6 Solder (first solder)
7 Semiconductor laser chip 11 Au plating layer 13 Pt layer (first Pt layer)
14 Ti layer (refractory metal layer)
15 Pt layer (second Pt layer)

Claims (9)

フレームと、
前記フレームにモールド樹脂により固定されたリードと、
前記フレーム上に、第１の半田により接合されたサブマウントと、
前記サブマウント上に、第２の半田により接合された半導体レーザチップとを備え、
前記モールド樹脂の耐熱温度は、前記第１及び第２の半田の融点よりも高いことを特徴とする半導体レーザ装置。 Frame,
A lead fixed to the frame by a mold resin;
A submount joined by first solder on the frame;
A semiconductor laser chip joined by second solder on the submount;
2. A semiconductor laser device according to claim 1, wherein a heat resistance temperature of the mold resin is higher than a melting point of the first and second solders. 前記モールド樹脂は熱硬化性樹脂又は熱可塑性樹脂であることを特徴とする請求項１に記載の半導体レーザ装置。   The semiconductor laser device according to claim 1, wherein the mold resin is a thermosetting resin or a thermoplastic resin. 前記モールド樹脂は熱可塑性樹脂であり、
前記第１及び第２の半田はＳｎＡｇ半田であることを特徴とする請求項１に記載の半導体レーザ装置。 The mold resin is a thermoplastic resin,
2. The semiconductor laser device according to claim 1, wherein the first and second solders are SnAg solders. 前記半導体レーザチップはＡｕメッキ層を有し、
前記第１の半田はＳｎＡｇ半田であり、
前記半導体レーザチップの前記Ａｕメッキ層と前記サブマウントの前記第１の半田との間に第１のＰｔ層が設けられていることを特徴とする請求項１に記載の半導体レーザ装置。 The semiconductor laser chip has an Au plating layer,
The first solder is SnAg solder,
2. The semiconductor laser device according to claim 1, wherein a first Pt layer is provided between the Au plating layer of the semiconductor laser chip and the first solder of the submount. 前記第１のＰｔ層の厚みは１５０ｎｍ以上、３５０ｎｍ以下であることを特徴とする請求項４に記載の半導体レーザ装置。   5. The semiconductor laser device according to claim 4, wherein a thickness of the first Pt layer is 150 nm or more and 350 nm or less. 前記第１及び第２の半田はＳｎＡｇ半田であり、
前記サブマウントの表面に高融点金属層が形成され、
前記高融点金属層上に第２のＰｔ層が形成され、
前記第２のＰｔ層が前記第１及び第２の半田に接することを特徴とする請求項１に記載の半導体レーザ装置。 The first and second solders are SnAg solders,
A refractory metal layer is formed on the surface of the submount,
A second Pt layer is formed on the refractory metal layer;
The semiconductor laser device according to claim 1, wherein the second Pt layer is in contact with the first and second solders. フレームにリードをモールド樹脂により固定する工程と、
上面と下面にそれぞれ第１の半田と第２の半田を付けたサブマウントを前記フレーム上に載せる工程と、
前記フレーム上に半導体レーザチップを載せる工程と、
積載された前記フレーム、前記サブマウント、及び前記半導体レーザチップを加熱して前記第１及び第２の半田を溶融させて、前記フレーム上に前記第１の半田により前記サブマウントを接合し、前記サブマウント上に前記第２の半田により前記半導体レーザチップを接合する工程とを備え、
前記モールド樹脂の耐熱温度は、前記第１及び第２の半田の融点よりも高いことを特徴とする半導体レーザ装置の製造方法。 Fixing the lead to the frame with mold resin;
Placing a submount having a first solder and a second solder on the upper surface and the lower surface, respectively, on the frame;
Placing a semiconductor laser chip on the frame;
Heating the loaded frame, the submount, and the semiconductor laser chip to melt the first and second solders, joining the submount on the frame with the first solder, Bonding the semiconductor laser chip onto the submount with the second solder,
A method of manufacturing a semiconductor laser device, wherein the heat resistance temperature of the mold resin is higher than the melting points of the first and second solders. 前記フレームに前記リードを前記モールド樹脂により固定した後に、前記フレーム及び前記リードの表面にメッキを形成する工程を更に備え、
前記モールド樹脂は熱硬化性樹脂であることを特徴とする請求項７に記載の半導体レーザ装置の製造方法。 After the lead is fixed to the frame by the mold resin, further comprising a step of forming plating on the surface of the frame and the lead,
8. The method of manufacturing a semiconductor laser device according to claim 7, wherein the mold resin is a thermosetting resin. 前記フレーム及び前記リードの表面にメッキを形成する工程と、
前記メッキを形成した後に、プレスにより前記フレームにダウンセットを形成する工程とを更に備えることを特徴とする請求項７に記載の半導体レーザ装置の製造方法。 Forming a plating on the surface of the frame and the lead;
The method of manufacturing a semiconductor laser device according to claim 7, further comprising a step of forming a downset on the frame by pressing after forming the plating.
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