JP2011222627A5 - - Google Patents

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Publication number
JP2011222627A5
JP2011222627A5 JP2010087925A JP2010087925A JP2011222627A5 JP 2011222627 A5 JP2011222627 A5 JP 2011222627A5 JP 2010087925 A JP2010087925 A JP 2010087925A JP 2010087925 A JP2010087925 A JP 2010087925A JP 2011222627 A5 JP2011222627 A5 JP 2011222627A5
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JP
Japan
Prior art keywords
layer
solder
semiconductor laser
wire
submount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2010087925A
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Japanese (ja)
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JP2011222627A (en
JP5644160B2 (en
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Publication date
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Priority to JP2010087925A priority Critical patent/JP5644160B2/en
Priority claimed from JP2010087925A external-priority patent/JP5644160B2/en
Priority to TW99147226A priority patent/TWI438991B/en
Priority to CN 201110083417 priority patent/CN102214894B/en
Publication of JP2011222627A publication Critical patent/JP2011222627A/en
Publication of JP2011222627A5 publication Critical patent/JP2011222627A5/ja
Application granted granted Critical
Publication of JP5644160B2 publication Critical patent/JP5644160B2/en
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Description

次に、パッケージをワイヤボンドステージに移動させる。そして、図９に示すように、半導体レーザチップ７とフレーム１をワイヤ８により接続し、サブマウント５の電極パターンとリード３をワイヤ９により接続する。以上の工程により製造された半導体レーザ装置を収納トレイに納める。 Next, the package is moved to the wire bond stage. Then, as shown in FIG. 9, the semiconductor laser chip 7 and the frame 1 are connected by the wire 8, and the electrode pattern of the submount 5 and the lead 3 are connected by the wire 9 . The semiconductor laser device manufactured by the above process is placed in a storage tray.

１ フレーム、２ モールド樹脂、３ リード、４ 半田（第１の半田）、５ サブマウント、６ 半田（第２の半田）、７ 半導体レーザチップ、１１ Ａｕメッキ層、１３ Ｐｔ層（第１のＰｔ層）、１４ Ｔｉ層（高融点金属層）、１５ Ｐｔ層（第２のＰｔ層）
1 frame , 2 mold resin , 3 lead , 4 solder (first solder) , 5 submount , 6 solder ( second solder) , 7 semiconductor laser chip , 11 Au plating layer , 13 Pt layer (first Pt layer) Layer) , 14 Ti layer (refractory metal layer) , 15 Pt layer (second Pt layer)

JP2010087925A 2010-04-06 2010-04-06 Semiconductor laser device Active JP5644160B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010087925A JP5644160B2 (en) 2010-04-06 2010-04-06 Semiconductor laser device
TW99147226A TWI438991B (en) 2010-04-06 2010-12-31 Semiconductor laser device
CN 201110083417 CN102214894B (en) 2010-04-06 2011-04-02 Semiconductor laser device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010087925A JP5644160B2 (en) 2010-04-06 2010-04-06 Semiconductor laser device

Publications (3)

Publication Number Publication Date
JP2011222627A JP2011222627A (en) 2011-11-04
JP2011222627A5 true JP2011222627A5 (en) 2013-04-18
JP5644160B2 JP5644160B2 (en) 2014-12-24

Family

ID=44746071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010087925A Active JP5644160B2 (en) 2010-04-06 2010-04-06 Semiconductor laser device

Country Status (3)

Country Link
JP (1) JP5644160B2 (en)
CN (1) CN102214894B (en)
TW (1) TWI438991B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012102305A1 (en) * 2012-03-19 2013-09-19 Osram Opto Semiconductors Gmbh Laser diode device for projection system, has crystalline protective layer made of dielectric material is formed on radiation uncoupling surface of laser diode chip which is provided on mounting element
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
KR101581610B1 (en) * 2012-03-22 2016-01-11 미쓰비시덴키 가부시키가이샤 Semiconductor device and method for manufacturing same
DE102012103160A1 (en) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh laser diode device
US9008138B2 (en) 2012-04-12 2015-04-14 Osram Opto Semiconductors Gmbh Laser diode device
JP2014209508A (en) * 2013-04-16 2014-11-06 住友電気工業株式会社 Semiconductor device with solder, mounted semiconductor device with solder, and methods of manufacturing and mounting semiconductor device with solder
JP6572803B2 (en) * 2016-03-09 2019-09-11 三菱電機株式会社 Semiconductor laser device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5559817A (en) * 1994-11-23 1996-09-24 Lucent Technologies Inc. Complaint layer metallization
JP3607220B2 (en) * 2001-06-06 2005-01-05 松下電器産業株式会社 Semiconductor laser device
JP3882712B2 (en) * 2002-08-09 2007-02-21 住友電気工業株式会社 Submount and semiconductor device
JP2004327982A (en) * 2003-04-11 2004-11-18 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2005190520A (en) * 2003-12-24 2005-07-14 Sankyo Seiki Mfg Co Ltd Optical head device
JP2005303169A (en) * 2004-04-15 2005-10-27 Renesas Technology Corp Semiconductor devide and manufacturing method of the same
JP2006024812A (en) * 2004-07-09 2006-01-26 Sony Corp Lead frame mounted with semiconductor device and semiconductor apparatus using it
JP4513513B2 (en) * 2004-11-09 2010-07-28 株式会社村田製作所 Manufacturing method of electronic parts
JP2006319109A (en) * 2005-05-12 2006-11-24 Matsushita Electric Ind Co Ltd Lead frame for semiconductor device, package for semiconductor device and using same lead frame, and manufacturing method of same package
JP5095091B2 (en) * 2005-06-08 2012-12-12 シャープ株式会社 Laser device manufacturing method
JP4740030B2 (en) * 2005-06-08 2011-08-03 シャープ株式会社 Laser device manufacturing method
CN100592585C (en) * 2006-03-28 2010-02-24 三菱电机株式会社 Optical device package and optical semiconductor device using the same

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