JP2011198910A - Insulated heat dissipation substrate, and method of manufacturing the same - Google Patents

Insulated heat dissipation substrate, and method of manufacturing the same Download PDF

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JP2011198910A
JP2011198910A JP2010062332A JP2010062332A JP2011198910A JP 2011198910 A JP2011198910 A JP 2011198910A JP 2010062332 A JP2010062332 A JP 2010062332A JP 2010062332 A JP2010062332 A JP 2010062332A JP 2011198910 A JP2011198910 A JP 2011198910A
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resist
peeling
lead frame
heat dissipation
resin layer
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JP5556278B2 (en
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Tetsuya Tsumura
哲也 津村
Noriyuki Miyoshi
敬之 三好
Koji Shimoyama
浩司 下山
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Panasonic Corp
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Panasonic Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175Flow barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof

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  • Manufacturing Of Printed Wiring (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To form an inexpensive and reliable junction of an insulated heat dissipation substrate in a simple process.SOLUTION: The insulated heat dissipation substrate includes: a lead frame 9 formed by punching predetermined conductor patterns 9a, 9b, 9c, 9d and covering the top surface side thereof with resist 10; and an insulating resin layer 11 arranged with the lead frame 9 with the surface of the resist 10 being exposed, wherein a peeling section 13 is provided on a part of the top surface of the lead frame 9 by peeling the resist 10 off and forming an unevenness on a bottom surface and a soldering section is formed in the peeling section 13.

Description

本発明は各種電子機器に使用される絶縁放熱基板およびその製造方法に関するものである。   The present invention relates to an insulating heat dissipation substrate used for various electronic devices and a method for manufacturing the same.

以下、従来の絶縁放熱基板の製造方法について図面を用いて説明する。図10は従来の絶縁放熱基板1の斜視図であり、金属板2の上に設けた絶縁層3の表面に配置した導体パターン4を覆っている半田流れ等を防止するためのレジスト5を部分的に除去し、はんだ接合などを可能とする導体露出部6を形成したものである。ここで、例えば導体露出部6を形成するには、まず第1のステップとして、導体露出部6を形成する前の状態である図11の斜視図に示す導体パターン4を完全に覆うレジスト5を有した絶縁放熱基板1に対して、レジスト5を除去したい部分に対応した孔7を有するマスク8を重ね、次に第2のステップとして、マスク8の孔7へエッチング液等の溶剤を流し込むことにより、孔7の形状に対応した図10に示すような導体露出部6に対応する部分のレジスト5を剥離させ、その後に第3のステップとして図11に示すように、マスク8を絶縁放熱基板1に重ねた状態あるいはそれぞれを分離した状態として洗浄を行うことで不要な溶剤を除去するものであり、これらの複数の段階の工程を組み合わせることで対応するものであった。   Hereinafter, a conventional method for manufacturing an insulated heat dissipation substrate will be described with reference to the drawings. FIG. 10 is a perspective view of a conventional insulating heat radiating substrate 1 in which a resist 5 for preventing a solder flow or the like covering a conductor pattern 4 disposed on the surface of an insulating layer 3 provided on a metal plate 2 is partially provided. The conductor exposed portion 6 that can be removed by soldering and enables soldering or the like is formed. Here, for example, to form the conductor exposed portion 6, first, as a first step, a resist 5 that completely covers the conductor pattern 4 shown in the perspective view of FIG. 11, which is in a state before forming the conductor exposed portion 6, is formed. A mask 8 having a hole 7 corresponding to a portion where the resist 5 is to be removed is overlaid on the insulated heat dissipation substrate 1 and then a solvent such as an etching solution is poured into the hole 7 of the mask 8 as a second step. Thus, the resist 5 corresponding to the exposed conductor portion 6 as shown in FIG. 10 corresponding to the shape of the hole 7 is peeled off, and then the mask 8 is insulated as a third step as shown in FIG. In this case, unnecessary solvent is removed by washing in a state where they are superposed on each other or in a state where they are separated from each other, and this is achieved by combining these steps.

なお、この出願の発明に関する先行技術文献情報としては例えば特許文献1や特許文献2が知られている。   As prior art document information relating to the invention of this application, for example, Patent Document 1 and Patent Document 2 are known.

特開平9−18143号公報JP-A-9-18143 特開平7−171689号公報Japanese Patent Laid-Open No. 7-171689

しかしながら、従来の絶縁放熱基板の製造方法では図11に示すように、レジスト5を剥離するためには溶剤を使用するため、マスク8の孔7における溶剤の量の厳密な規定は困難であり、そのため1箇所の剥離部位においても、その剥離した領域全般にわたって剥離を行う深さについて安定性や均一性を欠くこととなり、後の実装でのはんだによる接合を行った際の信頼性を欠く可能性が生じることや、また特に接合する電極等が非常に小さな寸法となるようなデバイスを実装するためのランドの確保として導体露出部6を形成する際など、微小領域のレジスト5の剥離については寸法精度の維持が非常に困難であるという課題点があった。また、生産過程においても基板の洗浄、乾燥、レジスト印刷、硬化、マスキング、エッチング、水洗浄、湯洗浄、乾燥など複雑で多くの工程を要し、生産性を低下させる課題点もあった。   However, as shown in FIG. 11, in the conventional method for manufacturing an insulating heat dissipation substrate, a solvent is used to remove the resist 5, so that it is difficult to strictly define the amount of the solvent in the hole 7 of the mask 8, For this reason, even at one peeling site, the depth of peeling over the entire peeled area is lacking in stability and uniformity, and there is a possibility of lack of reliability when soldering in later mounting. In particular, when the conductor exposed portion 6 is formed to secure a land for mounting a device in which the electrode to be joined has a very small dimension, the dimension of the peeling of the resist 5 in the micro area is a dimension. There was a problem that it was very difficult to maintain accuracy. Further, in the production process, complicated and many steps such as substrate cleaning, drying, resist printing, curing, masking, etching, water cleaning, hot water cleaning, and drying are required, and there is a problem that productivity is lowered.

そこで本発明は、簡単な工程で安価でかつ信頼性の高い接合部の形成を可能とすることを目的とするものである。   Accordingly, an object of the present invention is to make it possible to form an inexpensive and highly reliable joint with a simple process.

そして、この目的を達成するために、所定の導体パターンを打抜いて形成し、その上面側をレジストで覆ったリードフレームと、前記レジスト面を露出させて前記リードフレームを配置した絶縁樹脂層とを備え、前記リードフレームの上面の一部には前記レジストを剥離して底面に凹凸部を形成した剥離部を設けたうえで、この剥離部にはんだ溶接部を形成したことを特徴としたものである。   In order to achieve this object, a lead frame formed by punching a predetermined conductor pattern and covering the upper surface side with a resist, and an insulating resin layer in which the lead frame is disposed with the resist surface exposed. And a solder welded portion is formed on the peeled portion after providing a peeled portion having a concavo-convex portion formed on the bottom surface by peeling the resist on a part of the top surface of the lead frame. It is.

本発明によれば、簡単な工程で信頼性の高い接合部の形成を可能とするものである。   According to the present invention, it is possible to form a highly reliable joint by a simple process.

本発明の第1の実施形態における絶縁放熱基板の斜視図The perspective view of the insulated heat dissipation board | substrate in the 1st Embodiment of this invention 本発明の第1の実施形態における絶縁放熱基板の第1の部分断面図1st partial sectional view of an insulating heat dissipation board in a first embodiment of the present invention 本発明の第1の実施形態における絶縁放熱基板の第1の部分上面図The 1st partial top view of the insulated heat dissipation board | substrate in the 1st Embodiment of this invention 本発明の第1の実施形態における絶縁放熱基板の表面の状態図FIG. 3 is a state diagram of the surface of the insulating heat dissipation board in the first embodiment of the present invention 本発明の第1の実施形態における絶縁放熱基板の第2の部分断面図The 2nd fragmentary sectional view of the insulated heat dissipation board in a 1st embodiment of the present invention. 本発明の第1の実施形態における絶縁放熱基板の第3の部分断面図The 3rd fragmentary sectional view of the insulation heat dissipation board in the 1st embodiment of the present invention. 本発明の第1の実施形態における絶縁放熱基板の第2の部分上面図The 2nd partial top view of the insulation heat dissipation board in the 1st embodiment of the present invention 本発明の第2の実施形態における絶縁放熱基板の製造方法の部分斜視図The fragmentary perspective view of the manufacturing method of the insulated heat dissipation board in the 2nd Embodiment of this invention 本発明の第2の実施形態における絶縁放熱基板の第1の部分上面図The 1st partial top view of the insulated heat dissipation board | substrate in the 2nd Embodiment of this invention 従来の絶縁放熱基板の第1の斜視図First perspective view of a conventional insulated heat dissipation substrate 従来の絶縁放熱基板の第2の斜視図Second perspective view of a conventional insulated heat dissipation substrate

以下、本発明の実施形態について図面を用いて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(第1の実施形態)
図1は本発明の第1の実施形態における絶縁放熱基板の斜視図である。所定の導体パターン9a、9b、9c、9dを打抜いて形成したリードフレーム9に対して、その上面側をレジスト10で覆ったものとしている。そしてレジスト10を上面に露出させて、リードフレーム9の下面側を絶縁樹脂層11の上面側に配置あるいは貼り付けている。ここでは金属放熱板12を絶縁樹脂層11の下面側に接触させて配置しているが、金属放熱板12については必要に応じて配置し、適用すればよい。
(First embodiment)
FIG. 1 is a perspective view of an insulating heat dissipation board according to the first embodiment of the present invention. A lead frame 9 formed by punching predetermined conductor patterns 9a, 9b, 9c, 9d is covered with a resist 10 on the upper surface side. Then, the resist 10 is exposed on the upper surface, and the lower surface side of the lead frame 9 is disposed or attached to the upper surface side of the insulating resin layer 11. Here, the metal heat radiating plate 12 is disposed in contact with the lower surface side of the insulating resin layer 11, but the metal heat radiating plate 12 may be disposed and applied as necessary.

ここで、リードフレーム9の上面の一部にはレジスト10を剥離した剥離部13を形成している。そして、図2の絶縁放熱基板の第1の部分断面図に示すように、この剥離部13にはその底面に凹凸部14を形成したうえで、この剥離部13にはんだ溶接部15を形成し、ここに被接続物(図示せず)であるところの電子部品の接続端子などを接続するものである。   Here, a peeling portion 13 from which the resist 10 has been peeled is formed on a part of the upper surface of the lead frame 9. Then, as shown in the first partial cross-sectional view of the insulated heat-radiating substrate in FIG. 2, an uneven portion 14 is formed on the bottom surface of the peeling portion 13, and a solder weld portion 15 is formed on the peeling portion 13. Here, a connection terminal of an electronic component which is a connected object (not shown) is connected.

この構成によれば、剥離部13はレジスト10が存在せずに、リードフレーム9を構成する導体であるところの例えば銅や銅合金そのものが露出した状態であり、当然ながらはんだ等の接合時の濡れ性については非常に良好なものとなる。そして、リードフレーム9とはんだ溶接部15とが接合することとなる面積が凹凸部14によって大きく得ることができ、この結果としてアンカー効果によりリードフレーム9とはんだ溶接部15との固着性やその信頼性を向上させると同時に、接合部の電気的抵抗を小さく抑えることを可能とするものである。   According to this configuration, the peeling portion 13 is a state in which, for example, copper or a copper alloy itself, which is a conductor constituting the lead frame 9, is exposed without the resist 10 being present, The wettability is very good. Then, the area where the lead frame 9 and the solder welded portion 15 are joined can be obtained by the uneven portion 14, and as a result, the anchoring effect between the lead frame 9 and the solder welded portion 15 and the reliability thereof. In addition, the electrical resistance of the joint portion can be kept small.

また、図3の絶縁放熱基板の第1の部分上面図に示すように、剥離部13の底面に設けた凹凸部14は凹部16の中に凸部17を孤立して不連続な状態として形成しても構わない。これにより、図2に示す凹凸部14によって得られるリードフレーム9とはんだ溶接部15とが接合することとなる面積をより大きくすることができ、固着性やその信頼性をさらに向上させることが可能である。   Further, as shown in the first partial top view of the insulating heat dissipation substrate in FIG. 3, the concavo-convex portion 14 provided on the bottom surface of the peeling portion 13 is formed so that the convex portion 17 is isolated and discontinuous in the concave portion 16. It doesn't matter. Thereby, the area where the lead frame 9 and the solder welded portion 15 obtained by the concavo-convex portion 14 shown in FIG. 2 are joined can be further increased, and the fixing property and its reliability can be further improved. It is.

またさらに、図3に示すように凹凸部14は規則的に格子状の配置とすることが望ましい。これにより、凹凸部14によって得られるアンカー効果は剥離部13の全面において概ね均等に生じることとなるため、固着性も平均化されることとなる。つまり、応力が一部に偏ることで機械的な劣化などが集中することにより信頼性を損ねるという事態を回避することも可能となる。   Furthermore, as shown in FIG. 3, it is desirable that the uneven portions 14 are regularly arranged in a lattice pattern. As a result, the anchor effect obtained by the concavo-convex portion 14 is generated almost uniformly over the entire surface of the peeling portion 13, so that the fixing property is also averaged. In other words, it is possible to avoid a situation in which reliability is deteriorated due to concentration of mechanical deterioration due to partial stress.

ここで凹凸部14の断面については、凹部16の幅を大きく、凸部17の幅を小さくした形状の図2に示したものを一例として挙げているが、これとは反対に凹部16の幅を小さく、凸部17の幅を大きくしたものとしても構わない。これらについては、凹凸部14を形成する際に例えばレーザ光の照射によるものであれば、そのレーザ光照射領域のエネルギー分布に応じて選択するものとしてもよい。   Here, as for the cross section of the concavo-convex portion 14, the shape shown in FIG. 2 in which the width of the concave portion 16 is large and the width of the convex portion 17 is small is given as an example. The width of the convex portion 17 may be increased. These may be selected according to the energy distribution of the laser light irradiation region, for example, if the unevenness portion 14 is formed by laser light irradiation.

そして、レーザ光によって凹凸部14を形成した際の断面の実測値は図4の絶縁放熱基板の表面の状態図のように、レジスト表面を基準とした天面側の凹凸の値はレジスト形成領域では凹凸が小さく、レジストの剥離側領域では凹凸が大きくなっていることが明らかとなっている。ここではレジストを酸化膜の非常に薄いもの(概ね2μm程度)とし、レジストの剥離側領域では凹凸は酸化膜に比較して大きな値となっている。この例では非常に小さな値のレジストおよびその剥離部分の深さに関するものを示しているが、これまでに述べた効果についてはその値が小さなものに限らず、mm単位のものであっても構わない。   The measured value of the cross section when the concavo-convex portion 14 is formed by the laser beam is as shown in the state diagram of the surface of the insulating heat dissipation substrate in FIG. 4, and the concavo-convex value on the top surface side with respect to the resist surface is the resist formation region. It is clear that the unevenness is small and the unevenness is large in the resist peeling side region. Here, the resist is a very thin oxide film (approximately 2 μm), and the unevenness in the resist peeling side region has a larger value than the oxide film. In this example, a resist with a very small value and the depth of the peeled portion are shown. However, the effects described so far are not limited to those with a small value, and may be in units of mm. Absent.

以上の説明では絶縁樹脂層11の上面にリードフレーム9を貼り付けるように配置した形態で、レジスト10は絶縁樹脂層11およびリードフレーム9の双方を覆ったものに対して、リードフレーム9の一部に剥離部13を設けたものについて示している。一方で、特に厚みが大きく、必ず打抜きによる形成が要求されるリードフレーム9を適用し、図5の絶縁放熱基板の第2の部分断面図に示すように、リードフレーム9を絶縁樹脂層11の上面側に埋設し、リードフレーム9の上面側のみを絶縁樹脂層11から露出した配置とすることが望ましい。   In the above description, the lead frame 9 is disposed on the upper surface of the insulating resin layer 11, and the resist 10 covers both the insulating resin layer 11 and the lead frame 9. It is shown that the peeling part 13 is provided in the part. On the other hand, a lead frame 9 that is particularly thick and is required to be formed by punching is applied. As shown in the second partial cross-sectional view of the insulating heat dissipation substrate in FIG. It is desirable to embed on the upper surface side and to arrange only the upper surface side of the lead frame 9 exposed from the insulating resin layer 11.

これによって、はんだ溶接部15を介して発熱部品(図示せず)から受けることとなる熱をリードフレーム9の下面のみならず厚みを有する側面からも絶縁樹脂層11へ伝えることができるため、放熱の効率の向上が可能となる。また、当然ながらリードフレーム9と絶縁樹脂層11との固着性を向上させることも可能である。そしてさらに、剥離部13の外側にはレジスト10と絶縁樹脂層11とが存在することとなるため、はんだ溶接部15の形成時等に仮にその量が不適当な場合であっても、はんだ流れを阻止する領域が二重に、且つ、位置関係として隣接して連続とし、材質として異なるものが不連続に存在することとなり、実装の安定性に対して有効となるものである。特に、レジスト10を、イミド系樹脂を適用せずに、リードフレーム9の銅表面に予め形成した酸化膜や、あるいは酸化膜とその上に付着させた離型剤などのシリコン化合物やフッ素化合物を残した状態のものを適用する場合は、リードフレーム9と共に酸化膜等からなるレジスト10を絶縁樹脂層11へ埋設する際、酸化膜等からなるレジスト10はリードフレーム9の表面のみの必要最低限の領域を確保できると同時に非常に薄いもので厚みに凹凸が生じにくいものであることから、上記の効果である流れの阻止と、レジスト10の上面側と絶縁樹脂層11の上面側とを同一平面にして段差が生じない状態とすることが容易となり、デバイス(図示せず)の実装に関しても安定した実装性を容易に確保することができる。   As a result, heat received from a heat generating component (not shown) via the solder welded portion 15 can be transmitted to the insulating resin layer 11 not only from the lower surface of the lead frame 9 but also from the side surface having a thickness. The efficiency can be improved. Of course, it is also possible to improve the adhesion between the lead frame 9 and the insulating resin layer 11. Further, since the resist 10 and the insulating resin layer 11 exist outside the peeling portion 13, even if the amount is inappropriate when the solder welded portion 15 is formed, the solder flow This is effective for the stability of the mounting, because there are double regions, adjacent to each other in terms of positional relationship, and discontinuous materials. In particular, the resist 10 is made of an oxide film formed in advance on the copper surface of the lead frame 9 without applying an imide-based resin, or a silicon compound or a fluorine compound such as an oxide film and a release agent attached on the oxide film. When the remaining state is applied, when the resist 10 made of an oxide film or the like is embedded in the insulating resin layer 11 together with the lead frame 9, the resist 10 made of an oxide film or the like is the minimum necessary only on the surface of the lead frame 9. Can be secured, and at the same time, the thickness is very thin and the thickness is not easily uneven. Therefore, the above-described effect of preventing the flow and the upper surface side of the resist 10 and the upper surface side of the insulating resin layer 11 are the same. It becomes easy to make a flat surface without a step, and stable mounting can be easily ensured for mounting of a device (not shown).

ここで、リードフレーム9の表面に酸化膜からなるレジスト10を形成するには、例えば、未酸化の状態かあるいは常温放置で生じた酸化膜を有するリードフレーム9を、最初に、絶縁樹脂層11へ埋め込み、次にリードフレーム9を埋め込んだ絶縁樹脂層11を加熱して硬化させるとともに、その加熱によりリードフレーム9が露出した部分のみを酸化させることで酸化膜を形成しても構わない。このリードフレーム9を絶縁樹脂層11へ埋め込む際には絶縁樹脂層11から露出させるリードフレーム9の上面と絶縁樹脂層11の上面とをほぼ同一面として行い、その状態で露出した部分を酸化させている。したがって、リードフレーム9の上面の露出した部分の酸化膜は露出していない部分に比較して厚みの大きな酸化膜となり、十分にはんだに対するバリアとしての機能を有することとなるものである。これに加えて、リードフレーム9の上面の露出した部分の酸化膜と、絶縁樹脂層11の上面との間に厳密には段差が生じるものの、樹脂によりレジスト10を形成した場合に比較すると非常に小さな値のものであり、ほぼ同一の平面とみなすことができ、デバイス(図示せず)の実装性に影響を与えるものではない。また、先述の離型剤については、リードフレーム9を絶縁樹脂層11に埋め込む際には成型用の金型内で行う場合が多く、その場合は絶縁樹脂層11と金型とが剥がれ易くさせるための一つの目的として離型剤を塗布する。そして、成型後に金型から取り出した時、酸化膜の上には離型剤であるシリコン化合物やフッ素化合物等を付着させていることとなり、この離型剤もまたその離型性故に接合工程においては更なるはんだに対するバリアとしての機能を有することとなる。また同時に、はんだ接合の前工程において離型剤の洗浄などによる除去も不要とするものである。   Here, in order to form the resist 10 made of an oxide film on the surface of the lead frame 9, for example, the lead frame 9 having an oxide film generated in an unoxidized state or left at room temperature is firstly formed with the insulating resin layer 11. Then, the insulating resin layer 11 in which the lead frame 9 is embedded may be heated and cured, and the oxide film may be formed by oxidizing only the portion where the lead frame 9 is exposed by the heating. When embedding the lead frame 9 in the insulating resin layer 11, the upper surface of the lead frame 9 exposed from the insulating resin layer 11 and the upper surface of the insulating resin layer 11 are made substantially the same surface, and the exposed portion is oxidized in that state. ing. Therefore, the exposed oxide film on the upper surface of the lead frame 9 becomes a thicker oxide film than the unexposed part, and has a sufficient function as a barrier against solder. In addition to this, although there is a strict difference between the exposed oxide film on the upper surface of the lead frame 9 and the upper surface of the insulating resin layer 11, it is much more compared with the case where the resist 10 is formed of resin. It is a small value and can be regarded as substantially the same plane, and does not affect the mountability of a device (not shown). In addition, the above-described release agent is often performed in a molding die when the lead frame 9 is embedded in the insulating resin layer 11, and in that case, the insulating resin layer 11 and the die are easily peeled off. For this purpose, a release agent is applied. And when it is taken out from the mold after molding, a silicon compound or fluorine compound, which is a mold release agent, is adhered on the oxide film, and this mold release agent is also used in the bonding process because of its mold release property. Has a function as a barrier against further solder. At the same time, it is not necessary to remove the release agent by washing or the like in the pre-process of soldering.

上記の説明では、はんだ流れを阻止する領域として、レジスト10と絶縁樹脂層11を二重に存在させることとしたが、図6の絶縁放熱基板の第3の部分断面図に示すように剥離部13と絶縁樹脂層11とが隣接した状態とした位置関係としても構わない。ここで、剥離部13と接する絶縁樹脂層11の側面部にあたる絶縁樹脂層側面部18は絶縁樹脂層11の上面側から下面側の方向にほぼ垂直に切り立った状態としていることで、はんだ溶接部15の形成時等にその流れを阻止する壁として機能することとなるためレジスト機能を有する層は介在させなくてもよい。これにより図7の絶縁放熱基板の第2の部分上面図に示すように、剥離部13をリードフレーム9の上に絶縁樹脂層11から隔離した位置ではなく、リードフレーム9と絶縁樹脂層11との境界部19に接して形成することも可能となり、剥離部13の配置に関する自由度が大きくなることから、絶縁放熱基板全体の小型化を可能とするものでもある。   In the above description, the resist 10 and the insulating resin layer 11 are doubled as a region for preventing the solder flow. However, as shown in the third partial cross-sectional view of the insulating heat dissipation substrate in FIG. 13 and the insulating resin layer 11 may be in a positional relationship adjacent to each other. Here, the insulating resin layer side surface portion 18 corresponding to the side surface portion of the insulating resin layer 11 in contact with the peeling portion 13 is in a state of standing substantially perpendicularly from the upper surface side to the lower surface side of the insulating resin layer 11, so that the solder welded portion Since the layer functions as a wall that prevents the flow of the film when the layer 15 is formed, a layer having a resist function may not be interposed. Accordingly, as shown in the second partial top view of the insulating heat dissipation substrate in FIG. 7, the lead frame 9 and the insulating resin layer 11 are not located on the lead frame 9 at a position separated from the insulating resin layer 11. The contact portion 19 can be formed in contact with each other, and the degree of freedom with respect to the arrangement of the peeling portion 13 is increased.

これは同時に、図6に示すようにリードフレーム9における剥離部13の側面部にあたる剥離側面部20もまた、リードフレーム9の上面側から下面側の方向にほぼ垂直に切り立った状態としている。これにより、例えば剥離部13の幅寸法Wが小さな値のものであっても、凹凸部14を幅寸法W全面に渡って効率的に形成させることとなり、その結果、はんだ溶接部15の固着性を向上させることが可能となる。当然ながら、狭い領域によって大きな固着強度を得ることができることから、これもまた絶縁放熱基板全体の小型化を可能とするものである。   At the same time, as shown in FIG. 6, the peeling side surface portion 20 corresponding to the side surface portion of the peeling portion 13 in the lead frame 9 is also standing substantially perpendicularly from the upper surface side to the lower surface side of the lead frame 9. Thereby, even if the width dimension W of the peeling part 13 is a small value, for example, the uneven part 14 is efficiently formed over the entire surface of the width dimension W. As a result, the adhesion of the solder welded part 15 is improved. Can be improved. As a matter of course, since a large fixing strength can be obtained by a narrow region, this also enables downsizing of the entire insulating heat dissipation substrate.

(第2の実施形態)
次に、これまでに説明した剥離部13の形成方法について説明する。図8は絶縁放熱基板の製造方法に関する部分斜視図である。絶縁樹脂層11を金属放熱板12の上に形成し、この絶縁樹脂層11の上面に導体によって任意のパターンに形成された導体であるリードフレーム9を埋め込むことによってなる絶縁放熱基板において、少なくともリードフレーム9の表面を覆うレジスト10に対して、所定の波長を有するレーザ光21をレーザ光照射口22から照射することにより、レジスト10を除去した剥離部13を形成するものである。
(Second Embodiment)
Next, the formation method of the peeling part 13 demonstrated so far is demonstrated. FIG. 8 is a partial perspective view relating to a method for manufacturing an insulating heat dissipation substrate. In an insulating heat dissipation board formed by forming an insulating resin layer 11 on a metal heat radiating plate 12 and embedding a lead frame 9 which is a conductor formed in an arbitrary pattern with a conductor on the upper surface of the insulating resin layer 11, at least a lead The resist 10 covering the surface of the frame 9 is irradiated with laser light 21 having a predetermined wavelength from the laser light irradiation port 22, thereby forming the peeling portion 13 from which the resist 10 has been removed.

これにより、剥離部13ではリードフレーム9の導体部分が露出することではんだなどの濡れ性が良好となり、後に剥離部13ではんだなどによる接合を行うことにより電子部品(図示せず)などを実装することが容易にできる。そしてその際のはんだは、剥離部13にのみとどまり、レジスト10の存在する領域へ流出することにはならない点はいうまでもない。また、レーザ光21の照射については、その照射位置に関して非常に厳密な設定が可能であることから、小さな面積の剥離部13から大きな面積の剥離部13まで、その面積の大小に関係なく厳密な寸法の設定が可能となる。さらに、離型剤をレジスト10としての機能を持たせる場合には、はんだ接合の前工程において離型剤の洗浄などによる除去も不要とするものである。   As a result, the conductor portion of the lead frame 9 is exposed at the peeling portion 13 to improve the wettability of solder and the like, and an electronic component (not shown) is mounted by joining with the solder or the like at the peeling portion 13 later. Can be easily done. Needless to say, the solder at that time stays only at the peeling portion 13 and does not flow out to the region where the resist 10 exists. In addition, since the irradiation position of the laser beam 21 can be set very strictly with respect to the irradiation position, the range from the peeling area 13 having a small area to the peeling area 13 having a large area is accurate regardless of the size of the area. The dimension can be set. Furthermore, when the release agent has a function as the resist 10, it is not necessary to remove the release agent by washing or the like in a pre-process of soldering.

ここで照射を行うレーザ光21は、材料により固有である反応を起こし易い波長や、剥離部13の要求する深さに応じて出力を決定すると同時に照射径などを設定するが、ここでは特にレジスト10として銅合金からなるリードフレーム9の表面に形成した酸化銅を除去することを第1の目的として一例とするため、この酸化銅の除去に適した定数を設定するものである。このとき、レーザ光21の照射によりリードフレーム9は非常に高温の熱を有することとなるが、リードフレーム9はその一部を露出した状態で絶縁樹脂層11に密着したうえで埋設されて絶縁放熱基板として適用されるものであるため、リードフレーム9に生じた熱は直ちに絶縁樹脂層11に伝達して放熱が行われることとなる。よって、リードフレーム9自身の熱による変形は生じ難く安定した形状を保つこともでき、電子部品(図示せず)などの実装も安定した状態で行うことができることとなる。また、リードフレーム9は上記のように埋設を行うことが可能な厚み(概ね0.2mm以上)を有する水準、すなわち打抜きによってリードフレーム9を所定のパターンに形成する程度の厚みを有するものが望ましい。   Here, the laser beam 21 to be irradiated determines the output depending on the wavelength at which reaction inherent to the material is likely to occur and the depth required by the peeling portion 13, and at the same time, the irradiation diameter is set. The removal of the copper oxide formed on the surface of the lead frame 9 made of copper alloy as an example is taken as an example for the first purpose, and therefore a constant suitable for the removal of this copper oxide is set. At this time, the lead frame 9 has a very high temperature heat due to the irradiation of the laser beam 21, but the lead frame 9 is buried and insulated after being in close contact with the insulating resin layer 11 with a part thereof exposed. Since it is applied as a heat dissipation substrate, the heat generated in the lead frame 9 is immediately transmitted to the insulating resin layer 11 to be dissipated. Therefore, the lead frame 9 itself is not easily deformed by heat, and a stable shape can be maintained, and electronic components (not shown) can be mounted in a stable state. Further, the lead frame 9 is desirably of a level having a thickness that can be embedded as described above (approximately 0.2 mm or more), that is, a thickness enough to form the lead frame 9 in a predetermined pattern by punching. .

次に、レーザ光21の照射方法で特にその軌跡について図9の絶縁放熱基板の第1の部分上面図を用いて説明する。絶縁樹脂層11に埋設し、レジスト10により表面を覆ったリードフレーム9に対して、レーザの被照射部において特定の幅LWを有した帯状の剥離帯A1〜C2を個々に形成することによって、所定の面積を有した剥離部13を形成している。   Next, the locus of the laser light 21 irradiation method will be described with reference to the first partial top view of the insulating heat dissipation substrate shown in FIG. By individually forming strip-shaped strips A1 to C2 having a specific width LW in the irradiated portion of the laser with respect to the lead frame 9 embedded in the insulating resin layer 11 and covered with the resist 10, A peeling portion 13 having a predetermined area is formed.

例えばここでは第1段階として、剥離帯A1(実線)をレーザ照射により形成する。そして、第2段階として剥離帯B1(破線)を同様にレーザ照射により形成する。このとき、剥離帯A1(実線)と剥離帯B1(破線)とは隙間を形成せず部分的に重複する状態でレーザ照射を行う。以下、同様にして剥離帯C1(一点鎖線)、剥離帯A2(実線)、剥離帯B2(破線)、剥離帯C2(一点鎖線)の順にレーザ照射を行うことで、最終的に剥離部13を形成している。   For example, here, as the first stage, the separation band A1 (solid line) is formed by laser irradiation. Then, as the second stage, a separation band B1 (broken line) is similarly formed by laser irradiation. At this time, laser irradiation is performed in a state where the separation band A1 (solid line) and the separation band B1 (broken line) partially overlap without forming a gap. Hereinafter, similarly, the laser irradiation is performed in the order of the peeling band C1 (one-dot chain line), the peeling band A2 (solid line), the peeling band B2 (dashed line), and the peeling band C2 (one-dot chain line), thereby finally removing the peeling portion 13. Forming.

またここで、剥離帯の中央近辺と両端近辺とを比較すると、中央近辺の方が照射エネルギーが大きくなることから、例えば同じ剥離帯A1(実線)においてもレジスト10を除去する深さは帯の中央近辺では深く、両端近辺では浅い状態のものとなる。これは当然ながら剥離帯A1〜C2の全てで起こるため、X−X’の断面では図6に示すように剥離部13の断面は凹凸形状を有することとなる。そして図9に示す剥離帯A1〜C2は全て同一の照射パワー、被照射幅および照射時間としているため、図6に示す剥離部13の幅W方向における全域で、単位面積における剥離深さは概ね同一であり、幅W方向での両端部近辺のu領域や中央部近辺のv領域が浅くなる、あるいは深くなるという形状とはならない。   Further, here, when comparing the vicinity of the center of the stripping band and the vicinity of both ends, the irradiation energy is larger in the vicinity of the center. For example, the depth at which the resist 10 is removed in the same stripping band A1 (solid line) is It is deep near the center and shallow near both ends. Since this naturally occurs in all of the strips A1 to C2, in the X-X 'cross section, the cross section of the peel portion 13 has an uneven shape as shown in FIG. 9 have the same irradiation power, irradiation width, and irradiation time, the peeling depth in the unit area is almost the entire area in the width W direction of the peeling portion 13 shown in FIG. It is the same, and the u region near both ends and the v region near the center in the width W direction are not shallow or deep.

以上の剥離部13の形成方法により、後にはんだ溶接部15を形成した際には、凹凸部14が存在することで接合面積が大きくなり、結果として接合強度を大きくすることができるものである。また、幅W方向における全域で、単位面積における剥離深さは概ね同一となることからはんだ溶接部15の強度分布もばらつきが小さくなり、はんだ溶接部15の信頼性を向上させることが可能である。   When the solder welded portion 15 is formed later by the method for forming the peeled portion 13 described above, the bonding area is increased due to the presence of the concavo-convex portion 14, and as a result, the bonding strength can be increased. Further, since the peeling depth in the unit area is almost the same in the entire area in the width W direction, the strength distribution of the solder welded portion 15 is less varied, and the reliability of the solder welded portion 15 can be improved. .

また、ここで形成した図9に示す剥離帯A1〜C2を横方向として定義した場合、縦方向にも縦剥離帯(図示せず)を追加するようにレーザ照射を行っても構わない。このとき、剥離部13では剥離帯A1〜C2によってその全面でレジスト10の除去を終えているため、縦剥離帯は重複した軌跡ではなく所定の間隔を有したうえで複数を並列させることでよい。   Further, when the separation bands A1 to C2 shown in FIG. 9 formed here are defined as the horizontal direction, laser irradiation may be performed so that a vertical separation band (not shown) is added also in the vertical direction. At this time, since removal of the resist 10 has been completed on the entire surface by the strips A1 to C2 in the stripping section 13, the longitudinal strips may be arranged in parallel after having a predetermined interval instead of overlapping trajectories. .

これにより、剥離部13の上面図は図3に示すように凸部17が格子状に配列した形態となることで、剥離部13の表面積が一層大きくなり、結果として接合強度を一層大きくすることができるものである。   As a result, the top view of the peeling portion 13 has a form in which the convex portions 17 are arranged in a lattice pattern as shown in FIG. 3, thereby further increasing the surface area of the peeling portion 13 and further increasing the bonding strength. It is something that can be done.

ここでは、図9に示す剥離帯A1〜C2や、縦剥離帯(図示せず)に関しては直線状の連続した帯状のものとして説明したが、連続してレーザ照射することによる帯状の軌跡ではなく、円形や楕円形の照射を断続的に行うことでくびれを有した帯状の剥離帯A1〜C2や、縦剥離帯(図示せず)を形成したものとしても構わない。この場合、剥離部13での剥離した部位の凹凸形状は、連続的にレーザ照射を行ったものに比較して複雑なものとなることで、凹凸形状による表面積の増分は大きなものとなる。従って、図6に示す凹凸部14の増加に伴うはんだ溶接部15の信頼性を、より一層に向上させることを可能とするものである。   Here, the strips A1 to C2 shown in FIG. 9 and the longitudinal strip (not shown) have been described as linear continuous strips, but they are not strip-like trajectories caused by continuous laser irradiation. The strip-shaped strips A1 to C2 having a constriction or a longitudinal strip (not shown) may be formed by intermittently performing circular or elliptical irradiation. In this case, the concavo-convex shape of the part peeled off at the peeling portion 13 becomes more complex than that obtained by continuous laser irradiation, and the increase in surface area due to the concavo-convex shape becomes large. Accordingly, it is possible to further improve the reliability of the solder welded portion 15 accompanying the increase of the uneven portion 14 shown in FIG.

またレーザ照射において、そのパワーの値は可変であるため、一定の速度で照射スポットを移動させると共に所定のパワー値を変化させることで所定の間隔でパワーの大きいところで剥離の度合いを大きくした状態とすることが可能となる。当然ながらパワー値と移動速度によって様々な幅や深さの凹凸を有した剥離帯の形成が可能であり、照射スポットの移動速度を遅くして剥離帯と他の剥離帯との間隔を狭ピッチにして照射スポットを重ね合わせれば深い凹凸の剥離帯を形成することとなり、速くすれば剥離帯と他の剥離帯との間隔は広ピッチで浅い凹凸の剥離帯を形成することが可能である。   In laser irradiation, since the power value is variable, the degree of peeling is increased at high power at predetermined intervals by moving the irradiation spot at a constant speed and changing the predetermined power value. It becomes possible to do. Naturally, it is possible to form strips with irregularities of various widths and depths depending on the power value and the moving speed, and the pitch between the stripped band and other strips is narrowed by slowing the irradiation spot moving speed. If the irradiation spots are overlapped, a deep uneven peeling band is formed. If the irradiation spot is accelerated, a shallow uneven peeling band can be formed with a wide interval between the peeling band and another peeling band.

また、図7に示すようにレジスト10と絶縁樹脂層11とは反応し易いレーザ波長が異なるため、境界部19のリードフレーム9側と絶縁樹脂層11側とでレーザ波長を変化させることや、境界部19にきっちりと沿うようにレーザ照射を行う必要は無く、境界部19のリードフレーム9側と絶縁樹脂層11側とをまたぐように、双方を同時にあるいは連続してレーザ照射をすることで照射の工程に適用して構わない。これにより、図6に示すように絶縁樹脂層11側の絶縁樹脂層側面部18に接する剥離部13と剥離側面部20側の剥離部13とにおいて剥離の深さをほぼ同一の状態に一致させることができ、また、レーザ照射による形成を行っているため絶縁樹脂層側面部18および剥離側面部20は概ね垂直に切り立った形で形成することができる。   In addition, as shown in FIG. 7, since the laser wavelength at which the resist 10 and the insulating resin layer 11 are likely to react is different, the laser wavelength can be changed between the lead frame 9 side and the insulating resin layer 11 side of the boundary portion 19, It is not necessary to irradiate the laser exactly along the boundary 19, and by irradiating the laser simultaneously or continuously on both sides of the boundary 19 so as to straddle the lead frame 9 side and the insulating resin layer 11 side. You may apply to the process of irradiation. As a result, as shown in FIG. 6, the peeling depths of the peeling portion 13 in contact with the insulating resin layer side surface portion 18 on the insulating resin layer 11 side and the peeling portion 13 on the peeling side surface portion 20 side are made to coincide with each other. In addition, since the formation by laser irradiation is performed, the insulating resin layer side surface portion 18 and the peeled side surface portion 20 can be formed in a substantially vertical shape.

これらのことから、はんだ溶接部15の強度分布もばらつきが小さくなり、はんだ溶接部15の信頼性を向上させることを可能とするものである。   For these reasons, the strength distribution of the solder welded portion 15 is also less varied, and the reliability of the solder welded portion 15 can be improved.

本発明の絶縁放熱基板は、信頼性の高い接合部の形成を可能とする効果を有し、絶縁放熱基板を各種電子機器に適用するにあたって有用である。   The insulated heat dissipation board of the present invention has an effect of enabling formation of a highly reliable joint, and is useful in applying the insulated heat dissipation board to various electronic devices.

9 リードフレーム
9a 導体パターン
9b 導体パターン
9c 導体パターン
9d 導体パターン
10 レジスト
11 絶縁樹脂層
12 金属放熱板
13 剥離部
14 凹凸部
15 はんだ溶接部
16 凹部
17 凸部
18 絶縁樹脂層側面部
19 境界部
20 剥離側面部
DESCRIPTION OF SYMBOLS 9 Lead frame 9a Conductor pattern 9b Conductor pattern 9c Conductor pattern 9d Conductor pattern 10 Resist 11 Insulating resin layer 12 Metal heat sink 13 Peeling part 14 Concavity and convexity part 15 Solder welding part 16 Concave part 17 Convex part 18 Insulating resin layer side part 19 Boundary part 20 Peeling side

Claims (12)

所定の導体パターンを打抜いて形成し、その上面側をレジストで覆ったリードフレームと、
前記レジスト面を露出させて前記リードフレームを配置した絶縁樹脂層とを備え、
前記リードフレームの上面の一部には前記レジストを剥離して底面に凹凸部を形成した剥離部を設けたうえで、
この剥離部にはんだ溶接部を形成した絶縁放熱基板。
A lead frame formed by punching a predetermined conductor pattern, and its upper surface side covered with a resist;
An insulating resin layer on which the lead frame is disposed with the resist surface exposed;
On the part of the top surface of the lead frame, after providing a peeling portion that peels off the resist and forms an uneven portion on the bottom surface,
An insulated heat dissipation board in which a solder weld is formed on the peeled portion.
レジストは酸化膜によって形成した請求項1に記載の絶縁放熱基板。 The insulating heat dissipation substrate according to claim 1, wherein the resist is formed of an oxide film. レジストは酸化膜とこの酸化膜を覆うシリコン化合物もしくはフッ素化合物によって形成した請求項1に記載の絶縁放熱基板。 The insulating heat-radiating substrate according to claim 1, wherein the resist is formed of an oxide film and a silicon compound or a fluorine compound that covers the oxide film. 凹凸部は格子状に配列した請求項1〜3のいずれかに記載の絶縁放熱基板。 The insulating heat dissipation substrate according to any one of claims 1 to 3, wherein the uneven portions are arranged in a lattice pattern. 所定の導体パターンを打抜いて形成し、その上面側をレジストで覆ったリードフレームと、
前記レジスト面を露出させて前記リードフレームを埋設した絶縁樹脂層とを備え、
前記リードフレームの上面の一部には前記レジストを剥離して底面に凹凸部を形成した剥離部を設けたうえで、
この剥離部にはんだ溶接部を形成した絶縁放熱基板。
A lead frame formed by punching a predetermined conductor pattern, and its upper surface side covered with a resist;
An insulating resin layer in which the lead frame is embedded by exposing the resist surface;
On the part of the top surface of the lead frame, after providing a peeling portion that peels off the resist and forms an uneven portion on the bottom surface,
An insulated heat dissipation board in which a solder weld is formed on the peeled portion.
レジストは酸化膜によって形成した請求項5に記載の絶縁放熱基板。 The insulating heat dissipation substrate according to claim 5, wherein the resist is formed of an oxide film. レジストは酸化膜とこの酸化膜を覆うシリコン化合物もしくはフッ素化合物によって形成した請求項5に記載の絶縁放熱基板。 6. The insulating heat dissipation substrate according to claim 5, wherein the resist is formed of an oxide film and a silicon compound or a fluorine compound covering the oxide film. 凹凸部は格子状に配列した請求項5〜7のいずれかに記載の絶縁放熱基板。 The insulating heat dissipation substrate according to any one of claims 5 to 7, wherein the uneven portions are arranged in a grid pattern. 剥離部はリードフレームと絶縁樹脂層との境界部に接して形成した請求項5〜7のいずれかに記載の絶縁放熱基板。 The insulating heat dissipation substrate according to any one of claims 5 to 7, wherein the peeling portion is formed in contact with a boundary portion between the lead frame and the insulating resin layer. リードフレームの厚みは0.2mm以上とした請求項5〜7のいずれかに記載の絶縁放熱基板。 The insulated heat-radiating substrate according to claim 5, wherein the lead frame has a thickness of 0.2 mm or more. 所定の導体パターンを打抜いて形成し、その上面側をレジストで覆ったリードフレームを、
前記レジスト面を露出させて絶縁樹脂層の上に配置し、
前記リードフレームの上面の一部には前記レジストを剥離した剥離部を設けたうえでこの剥離部にはんだ溶接部を形成するものであり、
前記剥離部を設けるための剥離工程において、
前記剥離部は前記レジストにレーザを照射することによって形成する絶縁放熱基板の製造方法。
A lead frame formed by punching a predetermined conductor pattern and covering the upper surface side with a resist,
The resist surface is exposed and placed on the insulating resin layer,
A part of the upper surface of the lead frame is provided with a peeling portion from which the resist is peeled, and a solder weld is formed on the peeling portion.
In the peeling step for providing the peeling portion,
The said peeling part is a manufacturing method of the insulated heat dissipation board | substrate formed by irradiating a laser to the said resist.
剥離工程はレーザの照射により、
直線状に複数の縦方向剥離溝を形成する第1の剥離工程と、
直線状に複数の横方向剥離溝を形成する第2の剥離工程とからなる請求項11に記載の絶縁放熱基板の製造方法。
The peeling process is performed by laser irradiation.
A first peeling step for forming a plurality of longitudinal peeling grooves in a straight line;
The manufacturing method of the insulated heat dissipation board | substrate of Claim 11 which consists of a 2nd peeling process which forms several horizontal direction peeling groove | channel linearly.
JP2010062332A 2010-03-18 2010-03-18 Insulated heat dissipation board and method for manufacturing the same Expired - Fee Related JP5556278B2 (en)

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