JP2011187881A - プラズマ処理装置および方法 - Google Patents

プラズマ処理装置および方法 Download PDF

Info

Publication number
JP2011187881A
JP2011187881A JP2010054408A JP2010054408A JP2011187881A JP 2011187881 A JP2011187881 A JP 2011187881A JP 2010054408 A JP2010054408 A JP 2010054408A JP 2010054408 A JP2010054408 A JP 2010054408A JP 2011187881 A JP2011187881 A JP 2011187881A
Authority
JP
Japan
Prior art keywords
adsorption
electrode
adsorption electrode
plasma
difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010054408A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011187881A5 (enrdf_load_stackoverflow
Inventor
Masatoshi Kin
正烈 金
Hiroaki Ishimura
裕昭 石村
Masamichi Sakaguchi
正道 坂口
Hitoshi Furubayashi
均 古林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010054408A priority Critical patent/JP2011187881A/ja
Publication of JP2011187881A publication Critical patent/JP2011187881A/ja
Publication of JP2011187881A5 publication Critical patent/JP2011187881A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2010054408A 2010-03-11 2010-03-11 プラズマ処理装置および方法 Pending JP2011187881A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010054408A JP2011187881A (ja) 2010-03-11 2010-03-11 プラズマ処理装置および方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010054408A JP2011187881A (ja) 2010-03-11 2010-03-11 プラズマ処理装置および方法

Publications (2)

Publication Number Publication Date
JP2011187881A true JP2011187881A (ja) 2011-09-22
JP2011187881A5 JP2011187881A5 (enrdf_load_stackoverflow) 2013-03-21

Family

ID=44793762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010054408A Pending JP2011187881A (ja) 2010-03-11 2010-03-11 プラズマ処理装置および方法

Country Status (1)

Country Link
JP (1) JP2011187881A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114158173A (zh) * 2021-11-30 2022-03-08 西北核技术研究所 一种用于抑制预脉冲电流的丝阵负载结构
KR20220091388A (ko) * 2020-12-23 2022-06-30 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 플라스마 처리 방법
KR20220123373A (ko) 2021-02-25 2022-09-06 주식회사 히타치하이테크 플라스마 처리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10189697A (ja) * 1996-12-26 1998-07-21 Kyocera Corp 静電チャック装置
JP2002507326A (ja) * 1997-06-27 2002-03-05 ラム・リサーチ・コーポレーション 双極静電チャックにおけるプラズマバイアス電圧のオフセット方法および装置
JP2006210726A (ja) * 2005-01-28 2006-08-10 Hitachi High-Technologies Corp プラズマ処理方法およびプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10189697A (ja) * 1996-12-26 1998-07-21 Kyocera Corp 静電チャック装置
JP2002507326A (ja) * 1997-06-27 2002-03-05 ラム・リサーチ・コーポレーション 双極静電チャックにおけるプラズマバイアス電圧のオフセット方法および装置
JP2006210726A (ja) * 2005-01-28 2006-08-10 Hitachi High-Technologies Corp プラズマ処理方法およびプラズマ処理装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220091388A (ko) * 2020-12-23 2022-06-30 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 플라스마 처리 방법
JP7527194B2 (ja) 2020-12-23 2024-08-02 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR102758199B1 (ko) 2020-12-23 2025-01-21 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 플라스마 처리 방법
TWI882195B (zh) * 2020-12-23 2025-05-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
KR20220123373A (ko) 2021-02-25 2022-09-06 주식회사 히타치하이테크 플라스마 처리 장치
CN114158173A (zh) * 2021-11-30 2022-03-08 西北核技术研究所 一种用于抑制预脉冲电流的丝阵负载结构
CN114158173B (zh) * 2021-11-30 2023-09-01 西北核技术研究所 一种用于抑制预脉冲电流的丝阵负载结构

Similar Documents

Publication Publication Date Title
JP4468194B2 (ja) プラズマ処理方法およびプラズマ処理装置
JP5372419B2 (ja) プラズマ処理装置及びプラズマ処理方法
TWI505354B (zh) Dry etching apparatus and dry etching method
JP5231038B2 (ja) プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
KR101770828B1 (ko) 기판 처리 장치
US10410902B2 (en) Plasma processing apparatus
TWI734185B (zh) 電漿處理裝置
KR100924845B1 (ko) 플라즈마 처리 장치용 탑재대 및 플라즈마 처리 장치
US20120031560A1 (en) Plasma processing apparatus
US20100078129A1 (en) Mounting table for plasma processing apparatus
KR20090129446A (ko) Ｒｆ-전력공급 전극의 ｄｃ 전압 제어 방법 및 장치
JP2008182081A (ja) プラズマ処理装置
US20200395196A1 (en) Plasma processing apparatus and method of manufacturing semiconductor device using the same
US10269543B2 (en) Lower electrode and plasma processing apparatus
KR20010087219A (ko) 플라즈마처리장치 및 방법
JP2011082180A (ja) プラズマ処理装置及びプラズマ処理方法
US20060037704A1 (en) Plasma Processing apparatus and method
WO2019244700A1 (ja) プラズマ処理装置及びプラズマエッチング方法
JP2016031955A (ja) プラズマ処理装置およびプラズマ処理方法
JP2006066905A (ja) プラズマ処理装置及びプラズマ処理方法
JP2015072825A (ja) プラズマ処理装置およびプラズマ処理方法
US20250218846A1 (en) Plasma processing apparatus
JP2011187881A (ja) プラズマ処理装置および方法
JP2003100720A (ja) プラズマ装置
JP3599670B2 (ja) プラズマ処理方法および装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130131

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130131

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130927

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131015

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140408