JP2011187740A - High-frequency package - Google Patents

High-frequency package Download PDF

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JP2011187740A
JP2011187740A JP2010052261A JP2010052261A JP2011187740A JP 2011187740 A JP2011187740 A JP 2011187740A JP 2010052261 A JP2010052261 A JP 2010052261A JP 2010052261 A JP2010052261 A JP 2010052261A JP 2011187740 A JP2011187740 A JP 2011187740A
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width
solder
frequency
annular pattern
substrate
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JP5383561B2 (en
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Kosuke Yasooka
興祐 八十岡
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency package for reducing leak of high-frequency signals. <P>SOLUTION: The high-frequency package 20 includes a substrate 1 loading, on the first surface thereof; a high-frequency oscillator for transmitting radio-waves; an annular pattern 2 formed surrounding the high-frequency oscillator; and a cover 3 soldered to the substrate with the solder deposited on the annular pattern 2; to cover the high-frequency oscillator. The annular pattern 2 forms at least in one place a gap portion; by separating the pattern in view of forming an air-ventilating hole to the solder and also includes a part having ordinary width as a first width and a part having expanded width as a second width which is wider than the first width provided at the location facing the gap portion. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、高周波発振部が搭載された基板を半田により接合する蓋体で封止する非気密型の高周波パッケージに関し、特に半田に通気孔を形成する高周波パッケージに関するものである。   The present invention relates to a non-hermetic high-frequency package in which a substrate on which a high-frequency oscillation unit is mounted is sealed with a lid that is joined by solder, and more particularly to a high-frequency package in which a vent is formed in solder.

従来、電波を送出する高周波発振部が搭載された基板に、高周波発振部を取り囲むように環状パターンを形成して、環状パターン上に盛られた半田にて蓋体を基板に接合することにより、高周波発振部を蓋体にて封止する構造の高周波パッケージが知られている(たとえば、特許文献1参照)。   Conventionally, by forming an annular pattern so as to surround the high-frequency oscillation unit on the substrate on which the high-frequency oscillation unit for transmitting radio waves is mounted, by joining the lid to the substrate with solder stacked on the annular pattern, A high-frequency package having a structure in which a high-frequency oscillation unit is sealed with a lid is known (for example, see Patent Document 1).

上記のような構造の高周波パッケージにおいて、高周波発振部が収納された内部空間を気密とせず非気密の空間とする場合がある。高周波パッケージを非気密とする場合、結露防止の目的で電波の漏れない微少な通気孔を設ける必要がある。従来、この通気孔を基板と蓋体を接合する半田に形成する方法が提案されている。この方法によれば、例えば、環状パターンの1箇所を分断して、局所的にパターンのない空隙部を形成する。これにより、この空隙部には半田が載らないので、基板と蓋体を接合して封止する半田の一部に微少な通気孔を容易に形成することができる。   In the high-frequency package having the above-described structure, the internal space in which the high-frequency oscillation unit is housed may be a non-airtight space without being airtight. When making a high-frequency package non-hermetic, it is necessary to provide minute ventilation holes that do not leak radio waves for the purpose of preventing condensation. Conventionally, a method has been proposed in which the vent hole is formed in solder for joining the substrate and the lid. According to this method, for example, one portion of the annular pattern is divided to form a void portion without a pattern locally. As a result, since no solder is placed in the gap, a minute air hole can be easily formed in a part of the solder that joins and seals the substrate and the lid.

特開2009−010170号公報JP 2009-010170 A

しかしながら、上記基板と蓋体を接合する半田に通気孔を形成する方法においては、半田塗布量のばらつきにより半田フィレットが適切な形状に成形できず、通気孔の大きさが大きくなってしまうことがあった。そのため、従来は半田量の塗布量を厳しく管理して、通気孔が大きくならないようにしているが、製造ばらつきにより、どうしても通気孔の幅が大きくなってしまうものもできてしまう。そして、通気孔の大きさが所定以上に大きいと、高周波パッケージ内部の高周波信号が外部に漏れてしまい、EMI特性の劣化やシステム上のノイズが増えてしまうという問題があった。   However, in the method of forming a vent hole in the solder that joins the substrate and the lid, the solder fillet cannot be formed into an appropriate shape due to variations in the amount of solder applied, resulting in an increase in the size of the vent hole. there were. For this reason, conventionally, the amount of solder applied is strictly controlled so that the vent hole does not become large. However, due to manufacturing variations, there may be a case where the width of the vent hole inevitably increases. If the size of the vent hole is larger than a predetermined value, a high-frequency signal inside the high-frequency package leaks to the outside, and there is a problem that EMI characteristics deteriorate and system noise increases.

本発明は、上記に鑑みてなされたものであって、半田フィレットを適切な形状に形成することができ、通気孔の大きさを大きくせずに適切な形状とすることで、高周波信号の漏れを削減することができる高周波パッケージを提供することを目的とする。   The present invention has been made in view of the above, and it is possible to form a solder fillet in an appropriate shape and to leak a high-frequency signal by making the shape appropriate without increasing the size of the vent hole. An object of the present invention is to provide a high-frequency package that can reduce the frequency.

上述した課題を解決し、目的を達成するために、本発明の高周波パッケージは、第1の面に電波を送出する高周波発振部が搭載された基板と、基板の第1の面に高周波発振部を取り囲むように形成された環状パターンと、環状パターン上に盛られた半田と、半田によって基板の第1の面に接合され高周波発振部を覆う蓋体とを備え、環状パターンは、半田に通気孔を形成するために、少なくとも1箇所にパターンが分断された空隙部を形成するとともに、第1の幅とされた通常幅部分と、空隙部に対向する位置に設けられ第1の幅より広い第2の幅とされた拡大幅部分とを有することを特徴とする。   In order to solve the above-described problems and achieve the object, a high-frequency package according to the present invention includes a substrate on which a high-frequency oscillation unit for transmitting radio waves is mounted on a first surface, and a high-frequency oscillation unit on a first surface of the substrate. An annular pattern formed so as to surround the substrate, solder placed on the annular pattern, and a lid that is joined to the first surface of the substrate by the solder and covers the high-frequency oscillation unit. The annular pattern passes through the solder. In order to form the pores, a void portion in which the pattern is divided is formed at least at one place, and the normal width portion having the first width and the width that is provided at a position facing the void portion are wider than the first width. It has the expansion width part made into the 2nd width, It is characterized by the above-mentioned.

本発明によれば、空隙部に対向する位置の環状パターンの幅を大きくすることで、空隙部に対向する位置のパターン面積が大きくなり、パターン上に載る半田量がフィレット形成に十分な量となるので、半田フィレットが適切な形状となり、通気孔が大きくなってしまうことがない。そのため、高周波信号の漏れを削減することができる。   According to the present invention, by increasing the width of the annular pattern at the position facing the gap, the pattern area at the position facing the gap is increased, and the amount of solder on the pattern is sufficient for fillet formation. Therefore, the solder fillet has an appropriate shape, and the vent hole does not become large. Therefore, leakage of high frequency signals can be reduced.

図1は、この発明にかかる高周波パッケージの実施の形態の分解斜視図である。FIG. 1 is an exploded perspective view of an embodiment of a high-frequency package according to the present invention. 図2は、図1のA面のおける断面図である。FIG. 2 is a cross-sectional view taken along plane A in FIG. 図3は、図1のA面が交差する付近の環状パターンの上面図である。FIG. 3 is a top view of an annular pattern in the vicinity of which the A plane of FIG. 1 intersects. 図4は、従来の高周波パッケージの図2相当の断面図である。FIG. 4 is a cross-sectional view of a conventional high-frequency package corresponding to FIG. 図5は、従来の高周波パッケージの図3相当の環状パターンの上面図である。FIG. 5 is a top view of an annular pattern corresponding to FIG. 3 of a conventional high-frequency package.

以下に、本発明にかかる高周波パッケージの実施の形態を図面に基づいて詳細に説明する。なお、この実施の形態によりこの発明が限定されるものではない。   Embodiments of a high-frequency package according to the present invention will be described below in detail with reference to the drawings. Note that the present invention is not limited to the embodiments.

(実施の形態)
図1は、この発明にかかる高周波パッケージの実施の形態の分解斜視図である。図2は、図1のA面のおける断面図である。図3は、図1のA面が交差する付近の環状パターンの上面図である。なお、図1において、環状パターン上に盛られた半田は省略している。
(Embodiment)
FIG. 1 is an exploded perspective view of an embodiment of a high-frequency package according to the present invention. FIG. 2 is a cross-sectional view taken along plane A in FIG. FIG. 3 is a top view of an annular pattern in the vicinity of which the A plane of FIG. 1 intersects. In FIG. 1, the solder stacked on the annular pattern is omitted.

本実施の形態の高周波パッケージ20は、基板1と、基板1の第1の面に形成された環状パターン2と、環状パターン2上に盛られた半田4(図2)と、半田4によって基板1の第1の面に接合される金属蓋(蓋体)3とを有している。基板1の第1の面の中央部には、高周波発振部外部からの高周波信号を増幅する高周波増幅部を含む)としての図示しない送受信回路が搭載されている。金属蓋3の裏面には、送受信回路との干渉をさけるために凹部3aが形成されている。環状パターン2は、基板1の第1の面に、送受信回路を取り囲むようにして、金属蓋3の外周縁部と対向する位置に形成されている。環状パターン2は、金属蓋3を接合する半田4を盛るために形成されている。   The high-frequency package 20 of the present embodiment includes a substrate 1, an annular pattern 2 formed on the first surface of the substrate 1, solder 4 (FIG. 2) stacked on the annular pattern 2, and the solder 4. 1 has a metal lid (lid body) 3 joined to the first surface. A transmission / reception circuit (not shown) as a high-frequency amplifier that amplifies a high-frequency signal from the outside of the high-frequency oscillator is mounted at the center of the first surface of the substrate 1. A recess 3a is formed on the back surface of the metal lid 3 to avoid interference with the transmission / reception circuit. The annular pattern 2 is formed on the first surface of the substrate 1 at a position facing the outer peripheral edge of the metal lid 3 so as to surround the transmission / reception circuit. The annular pattern 2 is formed to deposit solder 4 for joining the metal lid 3.

図2に示されるように、金属蓋3は環状パターン2上に盛られた半田4によって基板1と接合され、パッケージの内部に送受信回路を収納する概ね閉じた空間を形成する。半田4には、結露防止の目的で電波の漏れない微少な通気孔5が設けられる。   As shown in FIG. 2, the metal lid 3 is joined to the substrate 1 by solder 4 placed on the annular pattern 2 to form a generally closed space for accommodating the transmission / reception circuit inside the package. The solder 4 is provided with a minute ventilation hole 5 that does not leak radio waves for the purpose of preventing condensation.

図3に示されるように、半田4に通気孔5を形成するために、環状パターン2は、所定の1箇所にパターンが分断された空隙部2cを形成している。高周波信号の外部への漏れを考慮すると形成される通気孔5はできるだけ小さいことが望ましい。そのため、通気孔5を形成するための空隙部2cの大きさ(環状パターン2の長手方向長さ)は、通気孔5が確実に形成できる範囲でできるだけ小さい(短い)ほうがよい。そして、空隙部2cに対向する2つの端部は他の部分よりも幅広に形成されて拡大幅部分2bとなっている。すなわち、環状パターン2は、第1の幅とされた通常幅部分2aと、空隙部2cに対向する位置に設けられ第1の幅より広い第2の幅とされた拡大幅部分2bとから構成されている。   As shown in FIG. 3, in order to form the air holes 5 in the solder 4, the annular pattern 2 forms a gap portion 2 c where the pattern is divided at a predetermined position. In consideration of leakage of high-frequency signals to the outside, it is desirable that the formed air holes 5 be as small as possible. Therefore, the size of the gap 2c for forming the vent hole 5 (the length in the longitudinal direction of the annular pattern 2) is preferably as small as possible (short) as long as the vent hole 5 can be reliably formed. And two edge parts which oppose the space | gap part 2c are formed wider than the other part, and become the expansion width part 2b. That is, the annular pattern 2 includes a normal width portion 2a having a first width and an enlarged width portion 2b having a second width wider than the first width provided at a position facing the gap portion 2c. Has been.

なお、空隙部2cに対向する位置に設けられた拡大幅部分2bは、通常幅部分2aに対して短手方向両側に同じ量だけ幅を広げて幅広とされており、通常幅部分2aの連結する箇所と合わせて概略T字型をなしている。そのため、形成される半田フィレットが幅方向で対称形状となる。   The enlarged width portion 2b provided at a position facing the gap portion 2c is widened by the same amount on both sides in the short direction with respect to the normal width portion 2a, and the normal width portion 2a is connected. It is generally T-shaped together with the location to be done. Therefore, the formed solder fillet has a symmetrical shape in the width direction.

このような構成の高周波パッケージ20によれば、空隙部2cに対向する位置に設けられた拡大幅部分2bは、通常幅部分2aに対して幅を広げて幅広とされており、空隙部2cに対向する位置のパターン面積が大きくなりパターン上に載る半田量も多くなるので、半田フィレットが適切な形状となり、通気孔5が大きくなってしまうことがない。   According to the high-frequency package 20 having such a configuration, the enlarged width portion 2b provided at a position facing the gap portion 2c is wider than the normal width portion 2a so as to be wide. Since the pattern area at the opposing position increases and the amount of solder placed on the pattern also increases, the solder fillet has an appropriate shape and the vent hole 5 does not increase.

また、空隙部2cに対向する拡大幅部分2bとこの拡大幅部分2bに連続する通常幅部分とは、概略T字型を成すので、形成される半田フィレットが幅方向で対称形状となり、さらに適切な形状となるので、さらに通気孔5が大きくなってしまうことがない。   Further, since the enlarged width portion 2b facing the gap portion 2c and the normal width portion continuing to the enlarged width portion 2b are substantially T-shaped, the formed solder fillet is symmetrical in the width direction, and more appropriately Therefore, the vent hole 5 is not further enlarged.

図4は、比較のために示す従来の高周波パッケージの上記図2に相当する断面図である。図5は、同じく比較のために示す従来の高周波パッケージの上記図3に相当する環状パターンの上面図である。従来の高周波パッケージ50においては、従来の環状パターン12は、空隙部2cに対向する部分も含めて全て同じ幅である。そのため、半田塗布量のばらつきなどにより、空隙部12cに対向する部分に塗布される半田が空隙部12cと反対側に逃げたり、空隙部12cに対向する部分の半田量が十分な量とならなかったりすることがあった。そのため、空隙部12c近傍の半田量が減ると形成される半田フィレットが少なくなり、この部分に形成される通気孔15が想定したものより大きくなってしまうことがあり、これにより、高周波信号の漏れが増大するので課題とされていた。上記実施の形態によれば、上記のようにこの課題を解消することができる。   FIG. 4 is a cross-sectional view corresponding to FIG. 2 of a conventional high-frequency package shown for comparison. FIG. 5 is a top view of an annular pattern corresponding to FIG. 3 of the conventional high-frequency package, also shown for comparison. In the conventional high-frequency package 50, the conventional annular pattern 12 has the same width, including the portion facing the gap 2c. Therefore, due to variations in the amount of solder applied, the solder applied to the portion facing the gap 12c escapes to the opposite side of the gap 12c, or the amount of solder at the portion facing the gap 12c does not become a sufficient amount. Sometimes happened. For this reason, when the amount of solder near the gap 12c is reduced, the solder fillet formed is reduced, and the vent hole 15 formed in this part may be larger than expected, thereby leaking high-frequency signals. Has been regarded as a problem. According to the above embodiment, this problem can be solved as described above.

以上のように、本発明にかかる高周波パッケージは、高周波発振部が搭載された基板を半田により接合する蓋体で封止する高周波パッケージに適用されて有用なものであり、特に半田に通気孔を形成する非気密型の高周波パッケージに適用されて最適なものである。   As described above, the high-frequency package according to the present invention is useful when applied to a high-frequency package in which a substrate on which a high-frequency oscillation unit is mounted is sealed with a lid that is joined by solder. It is optimally applied to the non-hermetic type high frequency package to be formed.

1 基板
2 環状パターン
2a 通常幅部分
2b 拡大幅部分
2c 空隙部
3 金属蓋(蓋体)
4 半田
5 通気孔
20 高周波パッケージ
DESCRIPTION OF SYMBOLS 1 Substrate 2 Annular pattern 2a Normal width part 2b Enlarged width part 2c Cavity part 3 Metal lid (lid)
4 Solder 5 Vent 20 High frequency package

Claims (2)

第1の面に電波を送出する高周波発振部が搭載された基板と、
前記基板の第1の面に前記高周波発振部を取り囲むように形成された環状パターンと、 前記環状パターン上に盛られた半田と、
前記半田により前記基板の第1の面に接合され前記高周波発振部を覆う蓋体とを備え、 前記環状パターンは、前記半田に通気孔を形成するために、少なくとも1箇所にパターンが分断された空隙部を形成するとともに、第1の幅とされた通常幅部分と、前記空隙部に対向する位置に設けられ前記第1の幅より広い第2の幅とされた拡大幅部分とを有する ことを特徴とする高周波パッケージ。
A substrate on which a high-frequency oscillation unit for transmitting radio waves is mounted on a first surface;
An annular pattern formed on the first surface of the substrate so as to surround the high-frequency oscillating portion; and solder stacked on the annular pattern;
A lid that is bonded to the first surface of the substrate by the solder and covers the high-frequency oscillating portion; and the annular pattern is divided at least at one place in order to form a vent hole in the solder A normal width portion having a first width and an enlarged width portion having a second width wider than the first width provided at a position facing the gap portion, and forming a gap portion. High frequency package characterized by
前記空隙部に対向する前記拡大幅部分と当該拡大幅部分に連続する前記通常幅部分とは、概略T字型を成す
ことを特徴とする請求項1に記載の高周波パッケージ。
2. The high-frequency package according to claim 1, wherein the enlarged width portion facing the gap and the normal width portion continuous with the enlarged width portion are substantially T-shaped.
JP2010052261A 2010-03-09 2010-03-09 High frequency package Expired - Fee Related JP5383561B2 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0310542U (en) * 1989-06-19 1991-01-31
JPH06140523A (en) * 1992-10-14 1994-05-20 Sumitomo Kinzoku Ceramics:Kk Package for containing semiconductor device
JP2005322809A (en) * 2004-05-10 2005-11-17 Sharp Corp Semiconductor device, method for manufacturing the same, and module for optical device
JP2009302248A (en) * 2008-06-12 2009-12-24 Mitsubishi Electric Corp Electronic component package and its manufacturing method
WO2011074541A1 (en) * 2009-12-18 2011-06-23 三菱電機株式会社 Electronic component package
JP2012221992A (en) * 2011-04-04 2012-11-12 Mitsubishi Electric Corp Electronic component package

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0310542U (en) * 1989-06-19 1991-01-31
JPH06140523A (en) * 1992-10-14 1994-05-20 Sumitomo Kinzoku Ceramics:Kk Package for containing semiconductor device
JP2005322809A (en) * 2004-05-10 2005-11-17 Sharp Corp Semiconductor device, method for manufacturing the same, and module for optical device
JP2009302248A (en) * 2008-06-12 2009-12-24 Mitsubishi Electric Corp Electronic component package and its manufacturing method
WO2011074541A1 (en) * 2009-12-18 2011-06-23 三菱電機株式会社 Electronic component package
JP2012221992A (en) * 2011-04-04 2012-11-12 Mitsubishi Electric Corp Electronic component package

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