JP2011186079A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
- Publication number
- JP2011186079A JP2011186079A JP2010049709A JP2010049709A JP2011186079A JP 2011186079 A JP2011186079 A JP 2011186079A JP 2010049709 A JP2010049709 A JP 2010049709A JP 2010049709 A JP2010049709 A JP 2010049709A JP 2011186079 A JP2011186079 A JP 2011186079A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- liquid crystal
- electrode layer
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 332
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims description 133
- 239000000463 material Substances 0.000 claims description 52
- 229920000642 polymer Polymers 0.000 abstract description 28
- 230000005684 electric field Effects 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 698
- 239000010408 film Substances 0.000 description 221
- 239000004065 semiconductor Substances 0.000 description 169
- 238000000034 method Methods 0.000 description 100
- 238000010438 heat treatment Methods 0.000 description 41
- 239000007789 gas Substances 0.000 description 32
- 239000012535 impurity Substances 0.000 description 29
- 239000011347 resin Substances 0.000 description 27
- 229920005989 resin Polymers 0.000 description 27
- 238000004544 sputter deposition Methods 0.000 description 27
- 239000001257 hydrogen Substances 0.000 description 26
- 229910052739 hydrogen Inorganic materials 0.000 description 26
- 229910052782 aluminium Inorganic materials 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 22
- 230000008569 process Effects 0.000 description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 22
- 229910052814 silicon oxide Inorganic materials 0.000 description 22
- 230000006870 function Effects 0.000 description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000005530 etching Methods 0.000 description 19
- 239000010936 titanium Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 239000000956 alloy Substances 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 229910007541 Zn O Inorganic materials 0.000 description 15
- 239000010949 copper Substances 0.000 description 15
- 238000002425 crystallisation Methods 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000012298 atmosphere Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000011651 chromium Substances 0.000 description 13
- 230000008025 crystallization Effects 0.000 description 13
- 229910052750 molybdenum Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910001868 water Inorganic materials 0.000 description 13
- 239000004020 conductor Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000015654 memory Effects 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 229910052721 tungsten Inorganic materials 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229910003437 indium oxide Inorganic materials 0.000 description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 238000007667 floating Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000000565 sealant Substances 0.000 description 7
- 230000003068 static effect Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- -1 etc. Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 description 6
- 229910052779 Neodymium Inorganic materials 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052706 scandium Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000004040 coloring Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000004678 hydrides Chemical class 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- 229910052754 neon Inorganic materials 0.000 description 4
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 4
- 238000007645 offset printing Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 3
- 229910052990 silicon hydride Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000005407 aluminoborosilicate glass Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 208000003464 asthenopia Diseases 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000004815 dispersion polymer Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
Abstract
【解決手段】高分子分散型液晶(PDLC)又は高分子ネットワーク型液晶(PNLC)を液晶層に用いて、液晶による光の散乱光を利用して白表示(明表示)を行う。画素電極層が形成される画素領域に凹凸の構造体を設け、凸表面には可視光の光を反射する画素電極層(反射層)を設け、凹部には黒色層を設ける。白表示は液晶による光の散乱光を利用して行い、黒表示は、電界により透光性となった液晶層を介して凹部に設けられた黒色層による行う。
【選択図】図1
Description
本明細書で開示する発明の構成の一形態である液晶表示装置を、図1を用いて説明する。図1(A)は液晶表示装置の平面図であり、図1(B)は図1(A)における線A1−A2の断面図である。なお、図1(A)の平面図は第1の基板200側を示したもので、液晶層208、共通電極層231、第2の基板201は省略している。
本明細書で開示する発明の構成の他の一形態である液晶表示装置を、図2及び図3を用いて説明する。なお、実施の形態1と同様なものに関しては同様の材料及び作製方法を適用することができ、同一部分又は同様な機能を有する部分の詳細な説明は省略する。
本明細書に開示する発明を適用したアクティブマトリクス型の液晶表示装置の例を、図4を用いて説明する。
本実施の形態では、実施の形態1乃至3のいずれかに組み合わせることでさらに低消費電力化を図れる液晶表示装置の駆動方法を示す。実施の形態1と同一部分又は同様な機能を有する部分、及び工程は、実施の形態1と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態では、本明細書に開示する液晶表示装置に適用できるトランジスタの例を示す。本明細書に開示する液晶表示装置に適用できるトランジスタの構造は特に限定されず、例えばトップゲート構造、又はボトムゲート構造のスタガ型及びプレーナ型などを用いることができる。また、トランジスタはチャネル形成領域が一つ形成されるシングルゲート構造でも、2つ形成されるダブルゲート構造もしくは3つ形成されるトリプルゲート構造であっても良い。また、チャネル領域の上下にゲート絶縁層を介して配置された2つのゲート電極層を有する、デュアルゲート型でもよい。なお、図7(A)乃至(D)にトランジスタの断面構造の一例を以下に示す。
上記実施の形態3乃至5において、トランジスタの半導体層に用いることのできる例として酸化物半導体を説明する。
本実施の形態は、酸化物半導体層を含むトランジスタ、及び作製方法の他の一例を図8を用いて詳細に説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
上記実施の形態1乃至5において、トランジスタの半導体層に用いることのできる他の材料の例を説明する。
液晶表示装置の一形態に相当する液晶表示装置の外観及び断面について、図5(A)(B)(C)及び図6を用いて説明する。図5(A)(B)(C)は、第1の基板4001上に形成されたトランジスタ4010、及び液晶層4008を含む液晶素子4013を、第2の基板4006との間にシール材4005によって封止した、液晶表示装置の上面図であり、図6は、図5(A)のM−Nにおける断面図に相当する。
本明細書に開示する液晶表示装置は、さまざまな電子機器に適用することができる。特に本明細書に開示する液晶表示装置は、光散乱によって白を表示し、紙面のような良質な画質を有するので、使用者の目に優しく、電子ペーパーとして好適に適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。
Claims (6)
- 高分子分散型液晶材料を含む液晶層を挟持する第1の基板及び第2の基板と、
前記第1の基板の前記液晶層側の面から前記液晶層中に突出する構造体と、
前記構造体及び前記液晶層の間に凹凸を有する反射性の画素電極層と、
前記第2の基板及び前記液晶層の間に透光性の共通電極層と、
前記反射性の画素電極層の凹部において、前記液晶層との間に着色層とを有することを特徴とする液晶表示装置。 - 高分子分散型液晶材料を含む液晶層を挟持する第1の基板及び第2の基板と、
前記第1の基板の前記液晶層側の面から前記液晶層中に突出する構造体と、
前記構造体及び前記液晶層の間に凹凸を有する透光性の画素電極層と、
前記第2の基板及び前記液晶層の間に透光性の共通電極層と、
前記透光性の画素電極層の凹部において、前記第1の基板との間に着色層と、
前記透光性の画素電極層の凸部において、前記液晶層との間に反射層とを有することを特徴とする液晶表示装置。 - 請求項1又は請求項2において、前記着色層は黒色層であることを特徴とする液晶表示装置。
- 請求項1又は請求項2において、前記着色層は赤色層、緑色層、又は青色層であることを特徴とする液晶表示装置。
- 高分子分散型液晶材料を含む液晶層を挟持する第1の基板及び第2の基板と、
前記第1の基板の前記液晶層側の面から前記液晶層中に突出する構造体と、
前記構造体及び前記液晶層の間に凹凸を有する有色の画素電極層と、
前記第2の基板及び前記液晶層の間に透光性の共通電極層と、
前記透光性の画素電極層の凸部において、前記液晶層との間に反射層とを有することを特徴とする液晶表示装置。 - 請求項1乃至5のいずれか一項において、前記第1の基板と、前記第1の電極層との間にトランジスタが設けられ、
前記画素電極層は前記トランジスタと電気的に接続していることを特徴とする液晶表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010049709A JP5717350B2 (ja) | 2010-03-05 | 2010-03-05 | 液晶表示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010049709A JP5717350B2 (ja) | 2010-03-05 | 2010-03-05 | 液晶表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011186079A true JP2011186079A (ja) | 2011-09-22 |
JP2011186079A5 JP2011186079A5 (ja) | 2013-04-18 |
JP5717350B2 JP5717350B2 (ja) | 2015-05-13 |
Family
ID=44792456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010049709A Expired - Fee Related JP5717350B2 (ja) | 2010-03-05 | 2010-03-05 | 液晶表示装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5717350B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106990589A (zh) * | 2017-05-12 | 2017-07-28 | 深圳市华星光电技术有限公司 | 液晶面板及液晶显示装置 |
CN109643033A (zh) * | 2016-08-24 | 2019-04-16 | 松下知识产权经营株式会社 | 光学设备 |
US10338425B1 (en) | 2017-12-29 | 2019-07-02 | Huizhou China Star Optoelectronics Technology Co., Ltd. | Liquid crystal display device and its display panel |
WO2019127732A1 (zh) * | 2017-12-29 | 2019-07-04 | 惠州市华星光电技术有限公司 | 液晶显示器及其显示面板 |
JP2021103320A (ja) * | 2011-11-28 | 2021-07-15 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06337432A (ja) * | 1993-05-28 | 1994-12-06 | Toppan Printing Co Ltd | 液晶表示装置用背面電極板 |
JPH10333131A (ja) * | 1996-12-17 | 1998-12-18 | Matsushita Electric Ind Co Ltd | 表示パネル、表示パネルの製造方法、表示パネルの駆動方法、表示パネルの欠陥修正方法、及び表示パネルを用いた表示装置 |
JP2002296581A (ja) * | 2001-03-30 | 2002-10-09 | Fujitsu Ltd | 液晶表示装置 |
JP2006227267A (ja) * | 2005-02-17 | 2006-08-31 | Sharp Corp | 反射型表示装置 |
JP2006243472A (ja) * | 2005-03-04 | 2006-09-14 | Sharp Corp | 反射型表示装置およびその製造方法 |
JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
-
2010
- 2010-03-05 JP JP2010049709A patent/JP5717350B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06337432A (ja) * | 1993-05-28 | 1994-12-06 | Toppan Printing Co Ltd | 液晶表示装置用背面電極板 |
JPH10333131A (ja) * | 1996-12-17 | 1998-12-18 | Matsushita Electric Ind Co Ltd | 表示パネル、表示パネルの製造方法、表示パネルの駆動方法、表示パネルの欠陥修正方法、及び表示パネルを用いた表示装置 |
JP2002296581A (ja) * | 2001-03-30 | 2002-10-09 | Fujitsu Ltd | 液晶表示装置 |
JP2006227267A (ja) * | 2005-02-17 | 2006-08-31 | Sharp Corp | 反射型表示装置 |
JP2006243472A (ja) * | 2005-03-04 | 2006-09-14 | Sharp Corp | 反射型表示装置およびその製造方法 |
JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021103320A (ja) * | 2011-11-28 | 2021-07-15 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP2023017878A (ja) * | 2011-11-28 | 2023-02-07 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP7395694B2 (ja) | 2011-11-28 | 2023-12-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
CN109643033A (zh) * | 2016-08-24 | 2019-04-16 | 松下知识产权经营株式会社 | 光学设备 |
CN106990589A (zh) * | 2017-05-12 | 2017-07-28 | 深圳市华星光电技术有限公司 | 液晶面板及液晶显示装置 |
WO2018205313A1 (zh) * | 2017-05-12 | 2018-11-15 | 深圳市华星光电技术有限公司 | 液晶面板及液晶显示装置 |
US10338425B1 (en) | 2017-12-29 | 2019-07-02 | Huizhou China Star Optoelectronics Technology Co., Ltd. | Liquid crystal display device and its display panel |
WO2019127732A1 (zh) * | 2017-12-29 | 2019-07-04 | 惠州市华星光电技术有限公司 | 液晶显示器及其显示面板 |
Also Published As
Publication number | Publication date |
---|---|
JP5717350B2 (ja) | 2015-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5727858B2 (ja) | 液晶表示装置 | |
JP7095026B2 (ja) | 半導体装置 | |
JP7038182B2 (ja) | 表示装置 | |
JP7084969B2 (ja) | 表示装置 | |
JP5987083B2 (ja) | 液晶表示装置 | |
JP6351694B2 (ja) | 半導体装置 | |
JP2022068149A (ja) | 表示装置 | |
JP2020188276A (ja) | 半導体装置 | |
JP2022105518A (ja) | 表示装置 | |
JP2020170852A (ja) | 半導体装置 | |
JP2020174191A (ja) | 半導体装置 | |
KR101717453B1 (ko) | 반도체 장치 및 액정 표시 장치 | |
US8605240B2 (en) | Liquid crystal display device and manufacturing method thereof | |
JP5717350B2 (ja) | 液晶表示装置 | |
JP2012256870A (ja) | 表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130301 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130301 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130814 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130827 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130913 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140909 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141014 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150303 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150317 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5717350 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |