JP2011186078A5

JP2011186078A5 -

Info

Publication number: JP2011186078A5
Application number: JP2010049678A
Authority: JP
Filing date: 2010-03-05
Publication date: 2013-03-21

Description

本発明の一態様の電気光学装置は、画素電極と、前記画素電極に対応するように配置されたトランジスタと、前記トランジスタのチャネル領域を少なくとも覆い、前記チャネル領域を挟んで基板に対向するように配置される遮光膜と、前記チャネル領域と前記遮光膜との間に配置される第１の層間絶縁膜及び第２の層間絶縁膜と、前記第１の層間絶縁膜及び前記第２の層間絶縁膜を貫くように設けられ、前記遮光膜と前記トランジスタとを電気的に接続するためのコンタクトホールと、前記第２の層間絶縁膜に設けられる凹部と、を含み、前記遮光膜は前記凹部の壁の少なくとも一部を覆うように配置され、前記チャネル領域に向かう光を遮ることを特徴とする。
また、本発明の別の一態様の電気光学装置は、前記凹部と前記第１の層間絶縁膜との間に配置されるストッパー膜をさらに含むことを特徴とする。
上記の本発明に係る電気光学装置は、基板上に、画素電極と、該画素電極に対応して設けられたトランジスタと、該トランジスタの少なくともチャネル領域を上側から覆う上側遮光膜と、該上側遮光膜及び前記トランジスタ間に設けられ、前記上側遮光膜を電気的に接続するためのコンタクトホールが形成されていると共に前記トランジスタの上方に凹部が形成されている、多層構造の層間絶縁膜と、該層間絶縁膜内における前記多層構造をなす複数の膜間に設けられており、前記凹部の底又は底の周囲に形成されているストッパー膜の少なくとも一片とを備え、前記上側遮光膜は、前記凹部内に形成されている壁部を含む。 The electro-optical device of one embodiment of the present invention includes a pixel electrode, a transistor disposed to correspond to the pixel electrode, a channel region of the transistor, and at least a substrate region facing the substrate with the channel region interposed therebetween. A light shielding film disposed; a first interlayer insulating film and a second interlayer insulating film disposed between the channel region and the light shielding film; the first interlayer insulating film and the second interlayer insulating film; A contact hole for electrically connecting the light shielding film and the transistor, and a recess provided in the second interlayer insulating film, wherein the light shielding film is formed on the recess. It is arrange | positioned so that at least one part of a wall may be covered, and the light which goes to the said channel area | region is interrupted | blocked, It is characterized by the above-mentioned.
The electro-optical device according to another aspect of the invention further includes a stopper film disposed between the concave portion and the first interlayer insulating film.
The electro-optical device according to the present invention includes, on a substrate, a pixel electrode, a transistor provided corresponding to the pixel electrode, an upper light shielding film that covers at least a channel region of the transistor from above, and the upper light shielding A multilayer interlayer insulating film provided between the film and the transistor, in which a contact hole for electrically connecting the upper light shielding film is formed and a recess is formed above the transistor; and Provided between the plurality of films forming the multilayer structure in the interlayer insulating film, and provided with at least one piece of a stopper film formed on or around the bottom of the recess, and the upper light-shielding film includes the recess Including a wall formed therein.

Claims

And the picture element electrode,
And transistors arranged so as to correspond to the pixel electrode,
A light-shielding film arranged to cover at least the channel region of the transistor and to face the substrate across the channel region;
A first interlayer insulating film and a second interlayer insulating film disposed between the channel region and the light shielding film;
A contact hole provided so as to penetrate the first interlayer insulating film and the second interlayer insulating film, and electrically connecting the light shielding film and the transistor;
A recess provided in the second interlayer insulating film;
Including
The electro-optical device, wherein the light-shielding film is disposed so as to cover at least a part of the wall of the concave portion, and shields light traveling toward the channel region.

The electro-optical device according to claim 1, further comprising a stopper film disposed between the recess and the first interlayer insulating film.

The stopper film is viewed from above the substrate, it is formed in a region excluding the (i) a region where the contact hole is formed, (ii) an opening area of each pixel the pixel electrode are respectively formed The electro-optical device according to claim 2 .

The stopper film is viewed from over the substrate, the bottom and / or with being made form around the bottom of the recess, the bottom and / or is not formed in a region excluding the periphery of the bottom The electro-optical device according to claim 2 or 3 .

5. The electro-optical device according to claim 2 , wherein the stopper film is formed in a region excluding a region in which the contact hole is formed as viewed from above the substrate. .

The said stopper film | membrane is formed from the light-shielding material excellent in light-shielding property compared with the said 1st interlayer insulation film and / or the said 2nd interlayer insulation film , The Claim 3 or 4 characterized by the above-mentioned. Electro-optic device.

The stopper film, an electro-optical device according to claim 5, characterized in that it is formed of a transparent material having excellent optical transparency as compared with the shielding light film.

Between the first interlayer insulating film and the channel region , a gate electrode of the transistor exists at a position facing the channel region,
The first interlayer insulating film, the second interlayer insulating film, and the shielding light film has a portion of raised convex in response to the presence of said gate electrode,
When viewed from above the substrate, wherein the recess is in the second interlayer insulating film, at a position deviated from the raised position, that is formed in any one of claims 1 to 7, characterized in The electro-optical device described.

The gate electrode is made of a light-shielding conductive material, and when viewed from above the substrate, a pixel electrode side source / drain which is a side electrically connected to the pixel electrode in a source / drain region of the transistor A U-shaped portion surrounding the region from the channel region side to the U-shape,
The recess, in the second interlayer insulating film, as viewed in plan on the substrate, the claim 8 U-shaped cut and the position to place at least partially blocked, characterized in that it is formed The electro-optical device according to 1.

The electro-optical device according to claim 1, wherein the concave portion is further provided in the stopper film.

The electro-optical device according to claim 10, wherein the recess is further provided in the first interlayer insulating film.

An electronic device characterized by being provided with the electro-optical device according to any one of claims 1 to 11.

Forming a transistor on the substrate;
  Forming a first interlayer insulating film on the channel region of the transistor;
  Forming a second interlayer insulating film on the first interlayer insulating film;
  Forming a contact hole provided so as to penetrate the first interlayer insulating film and the second interlayer insulating film, and electrically connecting the light shielding film and the transistor;
Forming a recess in the second interlayer insulating film;
  Forming the light shielding film;
  Forming a pixel electrode so that the transistor corresponds to the pixel electrode; and
Including
  The method of manufacturing an electro-optical device, wherein the light-shielding film is disposed so as to cover at least a part of the wall of the recess, and shields light traveling toward the channel region.