JP2011181760A - Method of connecting terminals, and method of manufacturing semiconductor device using the same, and method of forming connection terminal - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of connecting terminals capable of being coping with a decrease in a pitch between the terminals in an electronic material following a request for high functionality and the miniaturization of electronic equipment, and a method of manufacturing a semiconductor device using the method, and to provide a method of forming the connection terminal and the like. <P>SOLUTION: By the method, opposing terminals 11, 21 are connected electrically via a conductive connection material 100 with a laminated structure composed of a resin composition 120 and metal foil 110 selected from solder foil or tin foil. The method includes an arrangement step of disposing the conductive connection material 100 between the terminals 11, 21, a heating/application step of heating the conductive connection material 100 at a temperature not lower than a melting point of the metal foil 110 and applying ultrasonic waves, and a coagulating/curing step of coagulating or curing the resin composition 120. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a method of electrically connecting terminals via a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil, and a semiconductor device using the same It relates to a manufacturing method. The present invention also relates to a method for forming a connection terminal.

In recent years, with the demand for higher functionality and miniaturization of electronic devices, the pitch between connection terminals in electronic materials is becoming increasingly narrow.
Flip chip connection technology using anisotropic conductive film (ACF) or anisotropic conductive resin capable of connecting a large number of terminals at once as a method suitable for connection between terminals in a fine wiring circuit (For example, JP-A-61-276873 (Patent Document 1) and Japanese Patent No. 3769688 (Patent Document 2)). An anisotropic conductive film or anisotropic conductive resin is a film or paste in which conductive particles are dispersed in an adhesive mainly composed of a thermosetting resin, and is disposed between circuits to be connected. By thermocompression bonding, a large number of terminals facing each other are connected together, and insulation between adjacent terminals can be ensured by a resin contained in the adhesive.
However, in the conventional method, it is difficult to control the aggregation of the conductive particles, and there is a problem that the conductive particles remain in the resin, and the movement of the conductive particles cannot be controlled and a part between the terminals is not controlled. There is a problem of not conducting, and it is difficult to cope with further narrowing of pitch between terminals.

JP-A 61-276873 Japanese Patent No. 3769688

  Under the circumstances as described above, development of a connection technique between terminals that can cope with further narrowing of the pitch between terminals in a semiconductor circuit or the like is required.

  As a result of intensive studies in order to solve the above problems, the present inventors have a laminated structure composed of a resin composition disposed between opposing terminals and a metal foil selected from solder foil or tin foil. When heating and melting the conductive connecting material, it has been found that application of ultrasonic waves between the substrates can promote aggregation of the metal foil between the terminals, and the present invention has been completed.

［式中、Ｒ^１〜Ｒ^５は、それぞれ独立して、１価の有機基であり、Ｒ^１〜Ｒ^５の少なくとも一つは水酸基である。］

［式中、Ｒ^６〜Ｒ^２０は、それぞれ独立して、１価の有機基であり、Ｒ^６〜Ｒ^２０の少なくとも一つは水酸基又はカルボキシル基である。］
（１１）第１の接続端子が設けられた回路面を有する第１の半導体チップと、第２の接続端子が設けられた回路面を有する第２の半導体チップとを備えてなる半導体装置の製造方法であって、（１）ないし（１０）のいずれかに記載の端子間の接続方法を用いて、前記第１の接続端子と前記第２の接続端子とを電気的に接続する工程を含む、半導体装置の製造方法、
（１２）第１の接続端子が設けられた回路面を有する半導体チップと、第２の接続端子が設けられた回路面を有する基板とを備えてなる半導体装置の製造方法であって、（１）ないし（１０）のいずれかに記載の端子間の接続方法を用いて、前記半導体チップの接続端子と前記基板の接続端子とを電気的に接続する工程を含む、半導体装置の製造方法、
（１３）第１の接続端子が設けられた回路面を有する第１の基板と、第２の接続端子が設けられた回路面を有する第２の基板とを備えてなる半導体装置の製造方法であって、（１）ないし１０のいずれかに記載の端子間の接続方法を用いて、前記第１の接続端子と前記第２の接続端子とを電気的に接続する工程を含む、半導体装置の製造方法、
（１４）第１の接続端子が設けられた回路面を有する第１の半導体チップと、第２の接続端子が設けられた回路面を有する第２の半導体ウェハとを備えてなる半導体装置の製造方法であって、（１）ないし（１０）のいずれかに記載の端子間の接続方法を用いて、前記第１の接続端子と前記第２の接続端子とを電気的に接続する工程を含む、半導体装置の製造方法、
（１５）第１の接続端子が設けられた回路面を有する第１の半導体ウェハと、第２の接続端子が設けられた回路面を有する第２の半導体ウェハとを備えてなる半導体装置の製造方法であって、（１）ないし（１０）のいずれかに記載の端子間の接続方法を用いて、前記第１の接続端子と前記第２の接続端子とを電気的に接続する工程を含む、半導体装置の製造方法、
（１６）樹脂組成物と、半田箔又は錫箔から選ばれる金属箔とから構成される積層構造を有する導電接続材料を介して端子上に接続端子を形成する方法であって、前記導電接続材料を端子上に配置する配置工程と、前記金属箔の融点以上の温度で前記導電接続材料を加熱するとともに超音波を印加する加熱印加工程とを含む、接続端子の形成方法、
（１７）前記加熱印加工程において溶融した金属箔が、端子上に凝集して前記端子間が電気的に接続される、（１６）に記載の接続端子の形成方法、
（１８）前記加熱印加工程において金属箔が溶融する前に超音波の印加を開始する、（１６）または（１７）に記載の接続端子の形成方法、
（１９）前記金属箔が半田箔である、（１６）ないし（１８）のいずれかに記載の接続端子の形成方法、
（２０）前記樹脂組成物が、熱硬化性樹脂を含む、（１６）ないし（１９）のいずれかに記載の接続端子の形成方法、
（２１）前記樹脂組成物が、硬化剤を含む、（１６）ないし（２０）のいずれかに記載の接続端子の形成方法、
（２２）前記樹脂組成物が、フラックス機能を有する化合物を含む、（１６）ないし（２１）のいずれかに記載の接続端子の形成方法。 That is, the present invention relates to a method for connecting between terminals, a method for manufacturing a semiconductor device using the same, a method for forming a connection terminal, and the like.
(1) A method of electrically connecting terminals via a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil, the conductive connection material comprising: An arrangement step of arranging between the opposing terminals, a heating application step of heating the conductive connection material at a temperature equal to or higher than the melting point of the metal foil and applying an ultrasonic wave, and a solidification and curing for solidifying or curing the resin composition A method of connecting between the terminals, including a step,
(2) The method for connecting terminals according to (1), wherein the metal foil melted in the heating application step is aggregated between the terminals and the terminals are electrically connected,
(3) The method for connecting terminals according to (1) or (2), wherein application of ultrasonic waves is started before the metal foil melts in the heating application step,
(4) The method for connecting terminals according to any one of (1) to (3), wherein the metal foil is a solder foil,
(5) The method for connecting terminals according to any one of (1) to (4), wherein the resin composition includes a thermosetting resin.
(6) The method for connecting terminals according to any one of (1) to (5), wherein the resin composition includes a curing agent,
(7) The method for connecting terminals according to any one of (1) to (6), wherein the resin composition includes a compound having a flux function,
(8) The method for connecting terminals according to (7), wherein the compound having the flux function includes a compound having a phenolic hydroxyl group and / or a carboxyl group,
(9) The method for connecting terminals according to (7) or (8), wherein the compound having the flux function includes a compound represented by the following general formula (1):
_{HOOC- (CH 2) n-COOH} ····· (1)
[In formula, n is an integer of 1-20. ]
(10) The method for connecting terminals according to (7) or (8), wherein the compound having the flux function includes a compound represented by the following general formula (2) and / or (3):

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]
(11) Manufacturing of a semiconductor device including a first semiconductor chip having a circuit surface provided with a first connection terminal, and a second semiconductor chip having a circuit surface provided with a second connection terminal. A method comprising the step of electrically connecting the first connection terminal and the second connection terminal using the method for connecting terminals according to any one of (1) to (10). , Semiconductor device manufacturing method,
(12) A method of manufacturing a semiconductor device, comprising: a semiconductor chip having a circuit surface provided with a first connection terminal; and a substrate having a circuit surface provided with a second connection terminal. A method of manufacturing a semiconductor device, including a step of electrically connecting the connection terminals of the semiconductor chip and the connection terminals of the substrate using the connection method between terminals according to any one of (1) to (10).
(13) A method for manufacturing a semiconductor device, comprising: a first substrate having a circuit surface provided with a first connection terminal; and a second substrate having a circuit surface provided with a second connection terminal. And a step of electrically connecting the first connection terminal and the second connection terminal using the connection method between terminals according to any one of (1) to (10). Production method,
(14) Manufacturing of a semiconductor device comprising a first semiconductor chip having a circuit surface provided with a first connection terminal, and a second semiconductor wafer having a circuit surface provided with a second connection terminal. A method comprising the step of electrically connecting the first connection terminal and the second connection terminal using the method for connecting terminals according to any one of (1) to (10). , Semiconductor device manufacturing method,
(15) Manufacturing of a semiconductor device comprising a first semiconductor wafer having a circuit surface provided with a first connection terminal and a second semiconductor wafer having a circuit surface provided with a second connection terminal A method comprising the step of electrically connecting the first connection terminal and the second connection terminal using the method for connecting terminals according to any one of (1) to (10). , Semiconductor device manufacturing method,
(16) A method of forming a connection terminal on a terminal through a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil, the conductive connection material comprising: A method of forming a connection terminal, comprising: an arrangement step of arranging on a terminal; and a heating application step of heating the conductive connection material at a temperature equal to or higher than a melting point of the metal foil and applying an ultrasonic wave.
(17) The method for forming a connection terminal according to (16), wherein the metal foil melted in the heating application step is aggregated on the terminals and the terminals are electrically connected.
(18) The method for forming a connection terminal according to (16) or (17), wherein application of ultrasonic waves is started before the metal foil melts in the heating application step,
(19) The method for forming a connection terminal according to any one of (16) to (18), wherein the metal foil is a solder foil,
(20) The method for forming a connection terminal according to any one of (16) to (19), wherein the resin composition includes a thermosetting resin.
(21) The method for forming a connection terminal according to any one of (16) to (20), wherein the resin composition includes a curing agent,
(22) The method for forming a connection terminal according to any one of (16) to (21), wherein the resin composition includes a compound having a flux function.

The present invention can provide a method for electrically connecting terminals via a metal foil, a method for manufacturing a semiconductor device using these, and a method for forming a connection terminal via a metal foil.
According to a preferred aspect of the present invention, the aggregation of the metal foil between the terminals to be connected can be controlled or promoted, and therefore, a large number of terminals in a fine wiring circuit such as a semiconductor device can be connected at once. In addition, a large number of connection terminals can be formed at once. Moreover, since it can suppress that metal foil remains in an insulating area | region, connection reliability can be improved. According to a preferred aspect of the present invention, it is possible to provide a connection technique that can cope with a narrow pitch of connection terminals in an electronic material.

FIG. 1 is a process explanatory diagram of a method for connecting terminals according to the present invention. FIG. 2 is a process explanatory diagram of the semiconductor device manufacturing method according to the first aspect of the present invention. FIG. 3 is a schematic cross-sectional view of a multi-stage stack type semiconductor device. FIG. 4 is an example of a schematic cross-sectional view of a substrate used in the present invention. FIG. 5 is a process explanatory diagram of the connection terminal forming method of the present invention.

  Hereinafter, a method for connecting terminals, a method for manufacturing a semiconductor device, a method for forming a connection terminal, and the like according to the present invention will be described.

1. First, a method for connecting terminals according to the present invention will be described.
The connection method between terminals of the present invention (hereinafter sometimes referred to as “the connection method of the present invention”) is a method of electrically connecting terminals via a metal foil, and includes a resin composition and a solder foil. Alternatively, an arrangement step of arranging a conductive connection material having a laminated structure composed of a metal foil selected from tin foil between opposing terminals, heating the conductive connection material at a temperature equal to or higher than the melting point of the metal foil, and ultrasonic waves And a heat application step for applying heat, and a solidification and curing step for solidifying or curing the resin composition. In the connection method between terminals of the present invention, the metal foil is melted and ultrasonic waves are applied between the opposing substrates. According to a preferred embodiment of the present invention, this makes it possible to control or promote the aggregation of the molten metal foil between the terminals to be connected, enabling electrical connection between the terminals.
According to a preferred aspect of the present invention, the aggregation of the metal foil can be controlled or promoted as described above, and therefore, electrical connection between a large number of terminals can be performed at once even in a fine wiring circuit. .

  The outline of the connection method between the terminals of the present invention will be described with reference to FIG. As shown in FIG. 1A, a terminal 11 provided on the circuit surface of the substrate 10 and a terminal 21 provided on the circuit surface of the substrate 20 are arranged to face each other, and these opposing terminals 11 and 21 are arranged. The conductive connection material 100 including the metal foil 110 and the resin composition 120 is disposed therebetween. Although not shown, the surfaces of the terminals 11 and 21 may be subjected to treatments such as cleaning, polishing, plating, and surface activation in order to improve electrical connection.

The conductive connecting material 100 arranged in this way is heated at a temperature equal to or higher than the melting point of the metal foil 110. In a state where the metal foil 110 is heated near the melting point of the metal foil 110, ultrasonic waves are applied to one or both of the opposing substrate 10 and substrate 20 using an ultrasonic generator.
Then, as shown in FIG. 1B, the metal foil 110 aggregates between the opposing terminals 11 and 21 to form a conductive region 300, and the terminals 11 and 21 are electrically connected. On the other hand, the resin composition 120 fills the gaps between the conductive regions 300 and forms the insulating regions 400 to ensure insulation between adjacent terminals.

  Thus, according to the preferable aspect of the present invention, it is possible to make electrical connection between the terminals 11 and 21 facing each other and to ensure insulation between adjacent terminals. According to a preferred aspect of the present invention, since aggregation of the metal foil can be controlled, there is an advantage that a large number of terminals can be conducted at once and excellent connection reliability is obtained. Hereinafter, each process of the connection method of this invention is demonstrated in detail.

(1) Arrangement Step In the arrangement step, the conductive connection material 100 having a laminated structure composed of the resin composition 120 and the metal foil 110 selected from solder foil or tin foil is arranged between the terminals 11 and 21 facing each other. The method for disposing the conductive connecting material 100 between the terminals is not particularly limited. The conductive connecting material 100 is disposed in contact with at least one of the opposing terminals 11 and 21 by a technique such as lamination, and is disposed in contact with the opposing terminals 11 and 21. The method of arrange | positioning without mentioning is mentioned.

  The resin composition 120 is not particularly limited, and a thermosetting resin composition that is cured by heating, a curable resin composition that is cured by irradiation with actinic radiation, or a thermoplastic resin composition can be used. Especially, the thermosetting resin composition hardened | cured by heating is preferable at the point which is excellent in mechanical characteristics, such as a linear expansion coefficient and an elasticity modulus after hardening. The resin composition may be liquid or solid. In the present specification, “liquid” means a state that does not have a certain form at room temperature (25 ° C.). This includes pastes.

<Resin composition>
-When the resin composition is a thermosetting resin composition (a) Thermosetting resin As the thermosetting resin according to the thermosetting resin composition, it can usually be used as an adhesive component for manufacturing semiconductor devices. If it is, it will not specifically limit. Such a thermosetting resin is not particularly limited, but is preferably one that cures at a temperature equal to or higher than the melting point of the metal foil. For example, an epoxy resin, a phenoxy resin, a silicone resin, an oxetane resin, a phenol resin, (Meth) acrylate resin, polyester resin (unsaturated polyester resin), diallyl phthalate resin, maleimide resin, polyimide resin (polyimide precursor resin), bismaleimide-triazine resin and the like. In particular, the use of a thermosetting resin containing at least one selected from the group consisting of epoxy resins, (meth) acrylate resins, phenoxy resins, polyester resins, polyimide resins, silicone resins, maleimide resins, and bismaleimide-triazine resins. preferable. Among these, an epoxy resin is preferable from the viewpoint of excellent curability and storage stability, heat resistance of the cured product, moisture resistance, and chemical resistance. Moreover, these curable resin components may be used individually by 1 type, or may use 2 or more types together.

  In the present invention, the form of the thermosetting resin can be appropriately selected according to the form of the thermosetting resin composition. When using a liquid thermosetting resin composition, it is preferable to use a liquid thermosetting resin, and when using a solid thermosetting resin composition, liquid and solid It is preferable to use any thermosetting resin. Moreover, when using a solid thermosetting resin composition at room temperature, it is preferable to use a film-forming resin in combination.

  In the present invention, any epoxy resin that is liquid at room temperature and solid at room temperature can be used as the epoxy resin. It is also possible to use an epoxy resin that is liquid at room temperature and an epoxy resin that is solid at room temperature. When the thermosetting resin composition is liquid, it is preferable to use an epoxy resin that is liquid at room temperature. When the thermosetting resin composition is solid, both liquid and solid epoxy resins are used. In the case of using a solid thermosetting resin composition at room temperature, it is preferable to use a film-forming resin component in combination as appropriate.

  The epoxy resin that is liquid at room temperature (25 ° C.) used in the present invention is not particularly limited, and examples thereof include bisphenol A type epoxy resins and bisphenol F type epoxy resins. Moreover, you may use together a bisphenol A type epoxy resin and a bisphenol F type epoxy resin.

The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300 g / eq, more preferably 160 to 250 g / eq, and particularly preferably 170 to 220 g / eq. If the epoxy equivalent is less than the above lower limit, the shrinkage of the cured product tends to increase, and warping may occur. On the other hand, when the upper limit is exceeded, when a film-forming resin is used in combination, the reactivity with a film-forming resin, particularly a polyimide resin, tends to decrease.

  The epoxy resin solid at room temperature (25 ° C.) used in the present invention is not particularly limited, but is bisphenol A type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, glycidyl. Examples include amine type epoxy resins, glycidyl ester type epoxy resins, trifunctional epoxy resins, and tetrafunctional epoxy resins. Among these, solid trifunctional epoxy resin, cresol novolac type epoxy resin and the like are preferable. Moreover, these epoxy resins may be used individually by 1 type, or may use 2 or more types together. The softening point of the epoxy resin that is solid at room temperature is preferably 40 to 120 ° C, more preferably 50 to 110 ° C, and particularly preferably 60 to 100 ° C. When the softening point is within the above range, tackiness can be suppressed and handling can be easily performed.

  In the present invention, commercially available products as such thermosetting resins can be used, and further, plasticizers, stabilizers, fillers, antistatic agents, pigments, etc., as long as the effects of the present invention are not impaired. What mixed these various additives can also be used.

(B) Curing agent The thermosetting resin composition according to the present invention is not particularly limited, but preferably contains a curing agent. By containing the curing agent, the thermosetting resin contained in the thermosetting resin composition can be surely cured, so that insulation between adjacent connection electrodes of the obtained semiconductor device can be ensured. .

  The curing agent is not particularly limited, and examples thereof include amine compounds, phenol compounds, acid anhydride compounds, thiol compounds, isocyanate compounds, and the like. These are the types of thermosetting resins used. What is necessary is just to select suitably according to etc.

  For example, when an epoxy resin is used as the thermosetting resin, the curing agent includes good reactivity with the epoxy resin, low dimensional change upon curing, and appropriate physical properties after curing (for example, heat resistance, moisture resistance) Etc.), phenolic compounds are preferably used.

  Although the phenol type compound used for this invention is not specifically limited, Since the physical property after hardening of an electroconductive connection material is excellent, it is preferable that it is bifunctional or more. For example, bisphenol A, tetramethyl bisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolacs, cresol novolacs and the like can be mentioned. Of these, phenol novolacs and cresol novolacs are preferably used because of their good melt viscosity and reactivity with epoxy resins and excellent physical properties after curing.

  What is necessary is just to select the compounding quantity of a hardening | curing agent suitably according to the kind and usage-amount of curable resin to be used. For example, when phenol novolacs are used as the curing agent, the blending amount thereof is preferably 5 with respect to the total amount of the components of the thermosetting resin composition in that the thermosetting resin is reliably cured. % By weight or more, more preferably 10% by weight or more. If epoxy resin and unreacted phenol novolac remain, it becomes a factor of ion migration. Therefore, in order not to remain as a residue, it is preferably 50% by weight or less, more preferably 30% by weight or less, and further preferably 25% by weight or less.

  You may prescribe | regulate the compounding quantity of a phenol novolak resin by the equivalent ratio with respect to an epoxy resin. For example, the equivalent ratio of phenol novolac resin to epoxy resin is 0.5 to 1.2, preferably 0.6 to 1.1, and more preferably 0.7 to 0.98. By setting the equivalent ratio of the phenol novolac resin to the epoxy resin to 0.5 or more, heat resistance and moisture resistance after curing can be ensured. On the other hand, by setting this equivalent ratio to 1.2 or less, the amount of the epoxy resin after curing and the unreacted residual phenol novolac resin can be reduced, and the ion migration resistance is improved. These curing agents may be used alone or in combination of two or more.

(C) Flux compound The compound having a flux function used in the present invention has an action of reducing a metal oxide film such as a terminal and a metal oxide surface oxide film. For example, the compound having a flux function is preferably a compound having a phenolic hydroxyl group and / or a carboxyl group. Examples of the compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5-xylenol, m- Ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tert-butylphenol, catechol, p-tert-amylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol AF, biphenol Monomers containing phenolic hydroxyl groups such as diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resins, o-cresol novolac resins, bisphenols Nord F novolak resins, resins containing a phenolic hydroxyl group such as bisphenol A novolac resin.

  Examples of the compound having a carboxyl group include an aliphatic acid anhydride, an alicyclic acid anhydride, an aromatic acid anhydride, an aliphatic carboxylic acid, and an aromatic carboxylic acid. Examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, and polysebacic acid anhydride. Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid. An anhydride etc. are mentioned. Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitate, and glycerol tris trimellitate.

Examples of the aliphatic carboxylic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, Examples include oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, and pimelic acid. Among them, the following formula (1):
_{HOOC- (CH 2) n -COOH (} 1)
(In Formula (1), n is an integer of 1-20.)
Are preferable, and adipic acid, sebacic acid, and dodecanedioic acid are more preferable.

［式中、Ｒ^１〜Ｒ^５は、それぞれ独立して、１価の有機基であり、Ｒ^１〜Ｒ^５の少なくとも一つは水酸基である。］

［式中、Ｒ^６〜Ｒ^２０は、それぞれ独立して、１価の有機基であり、Ｒ^６〜Ｒ^２０の少なくとも一つは水酸基又はカルボキシル基である。］ The structure of the aromatic carboxylic acid is not particularly limited, but a compound represented by the following formula (2) or (3) is preferable.

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]

  Aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platnic acid, pyromellitic acid, meritic acid, xylylic acid, hemelitonic acid, mesitylene Acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,5-2 Examples include naphthoic acid derivatives such as dihydroxy-2-naphthoic acid; phenolphthaline; diphenolic acid and the like.

Among these, in the present invention, a compound that not only has a flux function but also acts as a curing agent for the curable resin is preferable. That is, as the compound having a flux function used in the present invention, a compound having a functional group capable of reacting with a curable resin and exhibiting an action of reducing a metal surface oxide film such as a metal foil and a terminal is used. preferable. The functional group is appropriately selected depending on the type of curable resin. For example, when an epoxy resin is used as the curable resin, the functional group is preferably a functional group capable of reacting with an epoxy group such as a carboxyl group, a hydroxyl group, and an amino group. A compound having a flux function also acts as a curing agent, thereby reducing metal surface oxide films such as metal foils and terminals to increase the wettability of the metal surface, facilitating the formation of conductive regions, After forming the property region, it can be added to the curable resin to increase the elastic modulus or Tg of the resin. In addition, since the compound having a flux function acts as a curing agent, there is an advantage that flux cleaning is not required and the occurrence of ion migration due to the remaining flux component can be suppressed.

The compound having such a flux function preferably has at least one carboxyl group. For example, when an epoxy resin is used as the curable resin, examples of the compound include aliphatic dicarboxylic acids or compounds having a carboxyl group and a phenolic hydroxyl group.
Preferred examples of the aliphatic dicarboxylic acid include compounds in which two carboxyl groups are bonded to an aliphatic hydrocarbon group. The aliphatic hydrocarbon group may be saturated or unsaturated acyclic, or may be saturated or unsaturated cyclic. Further, when the aliphatic hydrocarbon group is acyclic, it may be linear or branched.

  As such aliphatic dicarboxylic acid, the compound whose n is an integer of 1-20 in the said Formula (1) is mentioned preferably. When n in the formula (1) is within the above range, the balance between the flux activity, the outgas at the time of bonding, the elastic modulus after the conductive connecting material is cured, and the glass transition temperature becomes good. In particular, n is preferably 3 or more because an increase in the elastic modulus after curing of the conductive connecting material can be suppressed and the adhesion to the adherend can be improved. In addition, n is preferably 10 or less because it is possible to suppress a decrease in elastic modulus and further improve connection reliability.

  Examples of the aliphatic dicarboxylic acid represented by the formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, and pentadecane. Examples include diacid, octadecanedioic acid, nonadecanedioic acid, and eicosanedioic acid. Among these, adipic acid, suberic acid, sebacic acid and dodencandioic acid are preferable, and sebacic acid is particularly preferable.

  Examples of the compound having a carboxyl group and a phenolic hydroxyl group include salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-dihydroxybenzoic acid. Benzoic acid derivatives such as acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2- Naphthoic acid derivatives such as naphthoic acid; phenolphthaline; diphenolic acid and the like. Of these, phenolphthaline, gentisic acid, 2,4-dihydroxybenzoic acid, and 2,6-dihydroxybenzoic acid are preferable, and phenolphthalin and gentisic acid are particularly preferable.

  A compound having a flux function may be used alone or in combination of two or more. Moreover, since any compound easily absorbs moisture and causes voids, it is preferable to dry the compound having a flux function in advance before use.

Content of the compound which has a flux function can be suitably set according to the form of the resin composition to be used.
For example, when the resin composition is liquid, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, more preferably 3% by weight with respect to the total weight of the curable resin composition. % Or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.
In the case of a solid resin composition, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, more preferably 3% by weight with respect to the total weight of the curable resin composition. % Or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.
When the content of the compound having the flux function is within the above range, the metal foil and the surface oxide film of the terminal can be removed to such an extent that they can be electrically joined. Further, when the resin composition is a curable resin, it can be efficiently added to the resin at the time of curing to increase the elastic modulus or Tg of the resin. Moreover, generation | occurrence | production of the ion migration resulting from the compound which has an unreacted flux function can be suppressed.

(D) Film-forming resin In the present invention, when a solid thermosetting resin composition is used, it is preferable to use a film-forming resin in combination. Such a film-forming resin is not particularly limited as long as it is soluble in an organic solvent and has film-forming properties alone. Either a thermoplastic resin or a thermosetting resin can be used, and these can be used in combination.

  Specific film-forming resins include, for example, (meth) acrylic resins, phenoxy resins, polyester resins, polyurethane resins, polyimide resins, polyamideimide resins, siloxane-modified polyimide resins, polybutadiene resins, polypropylene resins, styrene-butadiene- Styrene copolymer, styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer Examples thereof include a polymer, acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate, and nylon. Among these, (meth) acrylic resins, phenoxy resins, polyester resins, polyamide resins and polyimide resins are preferable. Moreover, these film-forming resin components may be used individually by 1 type, or may use 2 or more types together.

  In the present invention, “(meth) acrylic resin” refers to a polymer of (meth) acrylic acid and its derivatives, or a copolymer of (meth) acrylic acid and its derivatives and other monomers. means. Here, “(meth) acrylic acid” or the like means “acrylic acid or methacrylic acid” or the like.

  Examples of the (meth) acrylic resin include polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, polyacrylic acid-2-ethylhexyl and other polyacrylic acid esters, poly Polymethacrylic acid esters such as methyl methacrylate, polyethyl methacrylate, polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile-butadiene copolymer , Acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methyl methacrylate Acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2 -Hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile copolymer And ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide copolymer. Of these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide are preferable. Moreover, these (meth) acrylic resins may be used alone or in combination of two or more.

Among such (meth) acrylic resins, from the viewpoint that adhesion to a semiconductor chip and compatibility with components constituting other thermosetting resin compositions can be improved, a nitrile group, an epoxy group A (meth) acrylic resin obtained by copolymerizing a monomer having a functional group such as a hydroxyl group or a carboxyl group is preferred. In such a (meth) acrylic resin, the compounding amount of the monomer having the functional group is not particularly limited, but is 0.1 to 0.1 mol based on 100 mol% of all monomers during the synthesis of the (meth) acrylic resin. It is preferably 50 mol%, more preferably 0.5 to 45 mol%, and particularly preferably 1 to 40 mol%. When the blending amount of the monomer having the functional group is less than the lower limit value, the adhesion tends not to be sufficiently improved. On the other hand, when the upper limit is exceeded, the adhesive force is too strong and the workability is not sufficiently improved. It is in.

  The weight average molecular weight of the (meth) acrylic resin is not particularly limited, but is preferably 100,000 or more, more preferably 150,000 to 1,000,000, and particularly preferably 250,000 to 900,000. When the weight average molecular weight is within the above range, the film forming property can be improved.

  In the present invention, when a phenoxy resin is used as the film-forming resin component, the number average molecular weight is preferably 5000 to 15000, more preferably 6000 to 14000, and particularly preferably 8000 to 12000. By using such a phenoxy resin, the fluidity of the thermosetting resin composition before curing can be suppressed.

Examples of the skeleton of the phenoxy resin include a bisphenol A type, a bisphenol F type, and a biphenyl type, but are not limited to these in the present invention. A phenoxy resin having a saturated water absorption rate of 1% or less is preferable because it can suppress the occurrence of foaming or peeling at high temperatures during bonding or solder mounting. The saturated water absorption rate is obtained by processing a phenoxy resin into a film having a thickness of 25 μm, drying it in a 100 ° C. atmosphere for 1 hour (an absolutely dry state), and further heating the film at a constant temperature and humidity chamber at 40 ° C. and 90% RH The mass change is measured every 24 hours, and the mass at the time when the mass change is saturated can be calculated by the following formula.
Saturated water absorption (%) = {(mass when saturated) − (mass when absolutely dry)} /
(Mass when absolutely dry) x 100

  The polyimide resin used in the present invention is not particularly limited as long as the resin has an imide bond in the repeating unit. For example, diamine and acid dianhydride are reacted, and the obtained polyamic acid is heated and dehydrated and cyclized. Can be obtained.

Examples of the diamine include aromatic diamines such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine and 2,5-dimethyl-p-phenylenediamine, 1,3 -Siloxane diamines such as bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane. These diamines may be used alone or in combination of two or more.
Examples of the acid dianhydride include 3,3,4,4′-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4′-oxydiphthalic dianhydride, and the like. These acid dianhydrides may be used alone or in combination of two or more.

  The polyimide resin used in the present invention may be either soluble or insoluble in a solvent, but is easy to varnish when mixed with other components, and is solvent-soluble in terms of excellent handling properties. Those are preferred. In particular, a siloxane-modified polyimide resin is preferably used because it can be dissolved in various organic solvents.

  The polyamide resin used in the present invention is not particularly limited. For example, ring-opening polymerization of cyclic aliphatic lactam such as 6-nylon and 12-nylon, 6,6-nylon, 4,6-nylon, 6,10 -Nylon, 6,12-nylon, etc., a polycondensation of aliphatic diamine and aliphatic dicarboxylic acid, a polycondensation of aromatic diamine and aliphatic dicarboxylic acid, aromatic diamine and aromatic dicarboxylic acid, And those obtained by condensation polymerization of amino acids.

  Although the molecular weight of the polyamide resin used by this invention is not restrict | limited in particular, For example, 5000-100000 are preferable and 8000-50000 are especially preferable. If the molecular weight is below the above range, the moldability is good, but the mechanical strength of the film is weak, and if it is above the above range, the viscosity becomes high, thereby inhibiting the movement of the metal foil, resulting in poor conduction.

  The polyamide resin used in the present invention may be either soluble or insoluble in a solvent, but it is easy to varnish when mixed with other components, and is solvent-soluble in that it is easy to handle. Those are more preferred.

  The polyester resin used in the present invention is not particularly limited, but a divalent acid such as terephthalic acid or a derivative thereof having an ester forming ability is used as an acid component, a glycol having 2 to 10 carbon atoms as a glycol component, other A saturated polyester resin obtained using a divalent alcohol or a derivative thereof having an ester-forming ability.

  Examples of the polyester resin include polyalkylene terephthalate resins such as polyethylene terephthalate resin, polybutylene terephthalate resin, polytrimethylene terephthalate resin, and polyhexamethylene terephthalate resin.

  The polyester resin may be a polyester resin copolymerized with other components as necessary. The component to be copolymerized is not particularly limited, and examples thereof include known acid components, alcohol components, phenol components, derivatives thereof having ester forming ability, polyalkylene glycol components, and the like.

  Examples of the copolymerizable acid component include a divalent or higher aromatic carboxylic acid having 8 to 22 carbon atoms, a divalent or higher aliphatic carbon carboxylic acid having 4 to 12 carbons, and a divalent or higher carbon. The alicyclic carboxylic acid of several 8-15, and these derivatives which have ester formation ability are mentioned. Specific examples of the copolymerizable acid component include terephthalic acid, isophthalic acid, naphthalenedicarboxylic acid, bis (p-carbodiphenyl) methaneanthracene dicarboxylic acid, 4-4′-diphenylcarboxylic acid, and 1,2-bis. (Phenoxy) ethane-4,4′-dicarboxylic acid, 5-sodium sulfoisophthalic acid, adipic acid, sebacic acid, azelaic acid, dodecanedioic acid, maleic acid, trimesic acid, trimellitic acid, pyromellitic acid, 1,3 -Cyclohexanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid and derivatives thereof having the ability to form esters. These can be used alone or in combination of two or more.

Examples of the copolymerizable alcohol and / or phenol component include dihydric or higher aliphatic alcohols having 2 to 15 carbon atoms, divalent or higher alicyclic alcohols having 6 to 20 carbon atoms, and 6 to 40 carbon atoms. These divalent or higher valent aromatic alcohols or phenols and derivatives thereof having the ability to form esters. Specific examples of the copolymerizable alcohol and / or phenol component include ethylene glycol, propanediol, butanediol, hexanediol, decanediol, neopentylglycol, cyclohexanedimethanol, cyclohexanediol, 2,2′-bis ( 4-hydroxyphenyl) propane, 2,2′-bis (4-hydroxycyclohexyl) propane, hydroquinone, glycerin, pentaerythritol, and the like, derivatives having ester forming ability, and cyclic esters such as ε-caprolactone Can be mentioned.

  Examples of the copolymerizable polyalkylene glycol component include polyethylene glycol, polypropylene glycol, polytetramethylene glycol, random or block copolymers thereof, and alkylene glycols of bisphenol compounds (polyethylene glycol, polypropylene glycol, polytetramethylene). And modified polyoxyalkylene glycols such as adducts such as glycol and random or block copolymers thereof.

(E) Curing accelerator The thermosetting resin composition may further include a curing accelerator. The curing accelerator may be appropriately selected according to the type of the thermosetting resin. For example, an imidazole compound having a melting point of 150 ° C. or higher can be used. When the melting point of the curing accelerator used is 150 ° C. or more, the solder component can move to the surface of the connection electrode before the curing of the thermosetting resin composition is completed, and the connection between the connection electrodes is excellent. Can be. Examples of the imidazole compound having a melting point of 150 ° C. or higher include 2-phenylhydroxyimidazole and 2-phenyl-4-methylhydroxyimidazole.

  The blending amount of the curing accelerator may be appropriately selected. For example, when an imidazole compound is used as the curing accelerator, 0.005 to 10% by weight with respect to the total amount of components of the thermosetting resin composition. % Is preferable, and more preferably about 0.01 to 5% by weight. By making the compounding quantity of an imidazole compound 0.005 weight% or more, the function as a hardening accelerator can be exhibited more effectively and the sclerosis | hardenability of a thermosetting resin composition can be improved. Moreover, by setting the blending amount of imidazole to 10% by weight or less, the melt viscosity of the resin at the melting temperature of the solder component constituting the solder bump does not become too high, and a good solder joint structure can be obtained. Moreover, the preservability of the thermosetting resin composition can be further improved. These curing accelerators may be used alone or in combination of two or more.

(F) Silane coupling agent Moreover, the said thermosetting resin composition may further contain a silane coupling agent. By including a silane coupling agent, the adhesiveness of the thermosetting resin composition with respect to a semiconductor chip can be improved. As the silane coupling agent, for example, an epoxy silane coupling agent, an aromatic-containing aminosilane coupling agent and the like can be used. These may be used alone or in combination of two or more. The blending amount of the silane coupling agent may be appropriately selected, but is preferably 0.01 to 5% by weight, more preferably 0.01 to 5% by weight with respect to the total amount of the components of the thermosetting resin composition. %, More preferably 0.05 to 5% by weight, particularly preferably 0.1 to 2% by weight.

  In addition to the above components, the thermosetting resin composition used in the present embodiment includes a plasticizer, a stabilizer, a tackifier, a lubricant, for improving various properties such as resin compatibility, stability, and workability. Various additives such as antioxidants, fillers, antistatic agents and pigments may be appropriately blended.

These components are mixed in a solvent, and the resulting varnish is applied onto a base material that has been subjected to a release treatment such as a polyester sheet, and dried at a predetermined temperature to an extent that does not substantially contain a solvent. A thermosetting resin composition can be obtained. The solvent used is not particularly limited as long as it is inert to the components used, but ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, DAA (diacetone alcohol), Aromatic hydrocarbons such as benzene, xylene and toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol and n-butyl alcohol, cellosolve such as methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate and ethyl cellosolve acetate , NMP (N-methyl-2-pyrrolidone), THF (tetrahydrofuran), DMF (dimethylformamide), DBE (dibasic acid ester), EEP (ethyl 3-ethoxypropionate) DMC (dimethyl carbonate), etc. is preferably used. The amount of the solvent used is preferably in the range where the solid content of the components mixed in the solvent is 10 to 60% by weight.

-When the resin composition is a thermoplastic resin composition The thermoplastic resin composition is not particularly limited, and examples thereof include a hot melt adhesive or a reactive hot melt adhesive.

(A) Thermoplastic resin The thermoplastic resin according to the thermoplastic resin composition is not particularly limited, and examples thereof include vinyl acetate, polyvinyl alcohol resin, polyvinyl butyral resin, vinyl chloride resin, (meth) acrylic resin, phenoxy resin, Polyester resin, polyimide resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin, acrylic resin, styrene resin, polyethylene resin, polypropylene resin, polyamide resin, cellulose resin, isobutylene resin, vinyl ether resin, liquid crystal polymer resin, polyphenylene sulfide resin, Polyphenylene ether resin, polyether sulfone resin, polyetherimide resin, polyether ether ketone resin, polyurethane resin, styrene-butadiene-styrene copolymer, steel Lene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer Examples thereof include a polymer and polyvinyl acetate. The thermoplastic resin may be a single polymer or a copolymer of at least two of the above thermoplastic resins.

The softening point of the thermoplastic resin is not particularly limited, but is preferably 10 ° C. or more lower than the melting point of the metal foil constituting the conductive connection material, particularly preferably 20 ° C. or more, and further 30 ° C. or more lower. Is more preferable.
The decomposition temperature of the thermoplastic resin is not particularly limited, but is preferably 10 ° C. or higher, particularly preferably 20 ° C. or higher, more preferably 30 ° C. or higher than the melting point of the metal foil constituting the conductive connecting material. Higher is more preferable.

(B) Flux compound As the flux compound, the same compound as described in the above “when the resin composition is a thermosetting resin composition” can be used. The same applies to preferred compounds and blending amounts.

(C) Other additives In addition to the above thermoplastic resins, silane coupling agents, plasticizers, stabilizers, tackifiers, activators, antioxidants, and inorganic fillers as long as the effects of the present invention are not impaired. Further, a filler, an antistatic agent, a pigment, and the like may be blended.

Although the thickness of the resin composition which concerns on this invention is not specifically limited, 1 micrometer-300 micrometers are preferable, More preferably, they are 3 micrometers-100 micrometers. Within this range, the resin composition can be sufficiently filled in the gap between the terminals facing each other, and the mechanical adhesive strength after curing or solidification of the resin composition can be ensured. In addition, electrical connection between the opposing terminals can be ensured. The size of the conductive connection material 100 is appropriately adjusted according to the size of the connection surface. The size of the conductive connection material 100 is desirably larger than at least half of the area of the connection surface in consideration of problems such as adhesion.

<Metal foil>
In the present invention, the metal foil layer constituting the conductive connection material is a layer constituted by a metal foil selected from solder foil or tin foil. The metal foil layer should just be formed in at least one part of the resin composition by planar view, and may be formed in the whole surface of the resin composition.

  The shape of the metal foil layer is not particularly limited, and a certain shape may be repeatedly formed in a pattern shape, or the shape may be irregular. Regular shapes and irregular shapes may be mixed. Examples of the shape of the metal foil layer include a dotted line pattern, a striped pattern, a polka dot pattern, a rectangular pattern, a checkered pattern, a frame shape, a lattice pattern, or a multiple frame shape. These shapes are examples, and these shapes can be combined or deformed depending on the purpose and application.

  In one embodiment of the present invention, when connecting a full grid type electronic material in which a connection electrode to be connected is disposed on the entire connection surface of the electronic material, a sheet-like metal foil is formed on the entire surface of the resin composition. Is preferably formed.

  In addition, when connecting a peripheral type electronic material in which the connection electrode to be connected is arranged at the periphery of the connection surface of the electronic material, a viewpoint of effectively using the metal foil, and between adjacent connection electrodes From the viewpoint of not leaving the metal foil, it is preferable to form a patterned metal foil repeatedly on at least a part of the resin composition. At this time, the shape of the metal foil can be appropriately selected depending on the pitch and form of the connection electrodes.

  The metal foil used in the present invention is not particularly limited, and tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe), aluminum (Al), gold (Au), germanium (Ge), an alloy of at least two metals selected from the group consisting of copper (Cu), or a simple tin Is preferred.

  Among these alloys, in consideration of melting temperature and mechanical properties, Sn—Pb alloy, Sn—Bi alloy which is lead-free solder, Sn—Ag—Cu alloy, Sn—In alloy, Sn— More preferably, it is made of an alloy containing Sn, such as an alloy of Ag. In the case of an Sn-Pb alloy, the tin content is preferably 30% by weight or more and less than 100% by weight, more preferably 35% by weight or more and less than 100% by weight, and particularly preferably 40% by weight or more. . Moreover, it is preferable that it is less than 100 weight%. In the case of lead-free solder, the tin content is preferably 15% by weight or more and less than 100% by weight, more preferably 20% by weight or more and less than 100% by weight, and more preferably 25% by weight or more and less than 100% by weight. It is particularly preferred that it is less than. For example, Sn-Pb alloy is Sn63-Pb (melting point 183 ° C), and lead-free solder is Sn-3.0Ag-0.5Cu (melting point 217 ° C), Sn-3.5Ag (melting point 221 ° C) Sn-58Bi (melting point 139 ° C.), Sn-9.0Zn (melting point 199 ° C.), Sn-3.5Ag-0.5Bi-3.0In (melting point 193 ° C.), Au-20Sn (melting point 280 ° C.), etc. Is mentioned.

In the present invention, a metal foil having a desired melting point and composition can be used as appropriate according to the heat resistance of the adherend to be connected. For example, in order to prevent the semiconductor chip from being damaged by the thermal history, a metal foil having a melting point of 330 ° C. or lower (more preferably 300 ° C. or lower, particularly preferably 280 ° C. or lower, more preferably 260 ° C. or lower) is used. It is preferable. In order to ensure the heat resistance of the semiconductor device after connection between the opposing terminals, it is preferable to use a metal foil having a melting point of 100 ° C. or higher (more preferably 110 ° C. or higher, particularly preferably 120 ° C. or higher). . In addition, melting | fusing point of metal foil can be measured with a differential scanning calorimeter (DSC).

  The thickness of the metal foil can be appropriately selected according to the gap between the opposing terminals, the distance between adjacent terminals, and the like. The thickness of the metal foil is, for example, preferably 0.5 μm or more, more preferably 3 μm or more, particularly preferably 5 μm or more, and preferably 100 μm or less, and 50 μm or less. More preferably, it is particularly preferably 20 μm or less. If the thickness of the metal foil is less than the lower limit, the number of unconnected terminals tends to increase due to insufficient solder or tin. On the other hand, if the thickness exceeds the upper limit, bridging occurs between adjacent terminals due to excessive solder or tin, and shorting easily occurs. There is a tendency.

  The method for producing the metal foil is not particularly limited, and examples thereof include a method for producing from a lump such as an ingot by rolling, and a method for forming the metal foil by direct vapor deposition, sputtering, plating, etc. on the resin composition. In addition, there is no particular limitation on a method for producing a metal foil having a repetitive pattern. However, a method of punching a metal foil into a predetermined pattern, a method of forming a predetermined pattern by etching, or a shielding plate or a mask is used. The method of forming by vapor deposition, sputtering, plating, etc. is mentioned.

  In the conductive connection material used in the present invention, the blending amount of the metal foil is preferably 5% by weight or more in the conductive connection material, more preferably 20% by weight or more, and more preferably 30% by weight or more. Particularly preferred. Further, it is preferably less than 97% by weight, more preferably 80% by weight or less, and particularly preferably 70% by weight or less. When the blending amount of the metal foil is less than the lower limit, unconnected terminals tend to increase due to lack of solder or tin. On the other hand, when the upper limit is exceeded, bridging tends to occur between adjacent terminals due to excessive solder or tin.

  Or you may define the compounding quantity of metal foil by the volume ratio with respect to a conductive connection material. For example, the blending amount of the metal foil is preferably 1% by volume or more, more preferably 5% by volume or more, and particularly preferably 10% by volume or more with respect to the conductive connection material. Moreover, it is preferable that it is 90 volume% or less, It is more preferable that it is 80 volume% or less, It is especially preferable that it is 70 volume% or less. When the blending amount of the metal foil is less than the lower limit, unconnected terminals tend to increase due to lack of solder or tin. On the other hand, when the upper limit is exceeded, bridging tends to occur between adjacent terminals due to excessive solder or tin.

(2) Heat application step In the heat application step, first, the conductive connecting material 100 is heated at a temperature equal to or higher than the melting point of the metal foil. When the resin composition 120 is a thermosetting resin composition, the heating temperature is equal to or higher than the melting point of the metal foil 110 and is heated at a temperature at which the curing of the thermosetting resin composition is not completed. Here, “the temperature at which the curing of the thermosetting resin composition is not completed” means that the melt viscosity of the thermosetting resin composition is preferably 100 Pa · s or less, more preferably 50 Pa · s or less, and particularly preferably 10 Pa. -It means a temperature that is s or less. However, in the connection method of the present invention, in order to prevent the conductive connection material from protruding from the substrate when heated, the melt viscosity of the thermosetting resin composition is preferably 0.001 Pa · s or more, more preferably Heating is performed at a temperature of 0.005 Pa · s or more, particularly preferably 0.01 Pa · s or more. The heating temperature only needs to be equal to or higher than the melting point of the metal foil. The upper limit is not particularly limited as long as the melting viscosity can be satisfied by adjusting the heating time, for example, shortening the heating time.

When the resin composition 120 is a thermoplastic resin composition, the melting point of the metal foil 110 is not lower than the melting point of the metal foil 110, and the melt viscosity of the thermoplastic resin composition is preferably 100 Pa · s or less, more preferably 50 Pa · s. Hereinafter, heating is performed particularly preferably at a temperature of 10 Pa · s or less. However, in the connection method of the present invention, the melt viscosity of the thermoplastic resin composition is preferably 0.001 Pa · s or more, more preferably, in order to prevent the conductive connection material from protruding from the substrate when heated. Heating is performed at a temperature of 0.005 Pa · s or more, particularly preferably 0.01 Pa · s or more.

  By heating the resin composition at the above temperature, the molten metal foil can move in the resin composition, so that the metal foil is likely to collect on the terminal, and metal bonding between the terminal and the metal foil is possible. It is easy to ensure conduction between the upper and lower terminals. In addition, when heating, you may pressurize so that the distance between the terminals which oppose may be closely approached. For example, the distance between the opposing terminals can be controlled to be constant by heating and pressurizing using means such as a press heater in the direction in which the substrates 10 and 20 in FIG. The electrical connection between the terminals can be made more reliable.

  The heating temperature is not particularly limited and may be appropriately selected depending on the metal foil to be used and the composition of the resin composition. The heating temperature is usually 100 ° C. or higher, preferably 130 ° C. or higher, more preferably 140 ° C. or higher, and further preferably 150 ° C. or higher. In order to prevent thermal deterioration of the electronic material to be connected, the heating temperature is usually 250 ° C. or lower, preferably 240 ° C. or lower, more preferably 230 ° C. or lower, and further preferably 220 ° C. or lower.

  Subsequently, in the heating application step, ultrasonic waves are applied between the opposing substrates while heating. By applying ultrasonic waves between the opposing substrates, ultrasonic vibration is applied between the substrates. Applying ultrasonic waves while heating and heating the conductive connecting material 100 at a temperature near the melting point of the metal foil, heating the metal connection material 100 to a temperature equal to or higher than the melting point of the metal foil melts the metal foil, and promotes aggregation between opposing terminals. The terminal and the metal foil are metal-bonded to form a conductive region, and the terminals are electrically connected. It is preferable to apply ultrasonic waves until the metal foil is completely melted and moved. On the other hand, the insulating resin composition fills the gap between the conductive regions to form an insulating region, and is adjacent to the conductive resin composition. Ensure insulation between terminals. Thereby, a short circuit between adjacent terminals can be prevented.

In the heating application step, the ultrasonic wave applied between the terminals facing each other has longitudinal vibration and lateral vibration, but is preferably transverse vibration and has an amplitude of 1 μm or more, more preferably 3 μm, and even more preferably 5 μm or more. Also, it is usually 40 μm or less, preferably 30 μm or less, and more preferably 25 μm or less.
The frequency is preferably 8 kHz or more, and more preferably 10 kHz or more. Moreover, it is 40 kHz or less normally, Preferably it is 30 kHz or less.
Furthermore, the pressure is 0.05 MPa or more, more preferably 0.1 MPa or more, and still more preferably 0.15 MPa. Moreover, it is 5 MPa or less normally, More preferably, it is 4 MPa or less, More preferably, it is 3 MPa or less.
In addition, as a method of applying ultrasonic waves, a device for generating ultrasonic waves may be incorporated in the head or stage to be heated, and ultrasonic waves may be applied from the upper side or the lower side, and from one side or both upper and lower sides. Sound waves may be applied. The application time of the ultrasonic wave is preferably 0.1 seconds or more, more preferably 0.5 seconds or more, and further preferably 1 second or more. Further, it is usually 60 seconds or shorter, preferably 30 seconds or shorter, more preferably 20 seconds or shorter.
In addition, although this embodiment demonstrated the form which applies an ultrasonic wave, heating a conductive connection material in a heating application process, the timing which applies an ultrasonic wave is completely before a metal foil melts. It may be applied until the metal foil has been moved and the metal foil has been moved, but for the time until the movement is completed, check the relationship between the heating time and temperature and the connection state using the actual board and components used. This may be set as appropriate.

(3) Solidification and curing step In the solidification and curing step, when the resin composition is a thermosetting resin composition, the thermosetting resin composition is cured, and the conductive region formed in the heating step and the application step By fixing the insulating region, electrical reliability and mechanical connection strength between terminals are secured. Curing of the thermosetting resin composition can be performed, for example, by heating the curable resin composition. Although heating temperature (curing temperature) changes with compositions of a thermosetting resin composition, it is preferable that it is temperature 10 degreeC or more lower than the heating temperature in a heating process. The heating temperature is usually 100 ° C. or higher, preferably 120 ° C. or higher, more preferably 130 ° C. or higher, and further preferably 150 ° C. or higher. Moreover, heating temperature is 300 degrees C or less normally, Preferably it is 250 degrees C or less, More preferably, it is 230 degrees C or less, More preferably, it is 200 degrees C or less. When it is within this range, the curable resin composition can be completely cured without thermal decomposition.

  In the solidification and curing step, when the resin composition is a thermoplastic resin composition, the thermoplastic resin composition is formed into a conductive region and an insulating region in the heating application step, and then the thermoplastic resin composition is solidified. To fix the insulating area. Thereby, electrical reliability and mechanical connection strength between the terminals can be sufficiently ensured.

  Solidification of the thermoplastic resin composition can be performed by cooling the conductive connection material heated and melted in the heating application step. Solidification of the conductive connecting material can be appropriately set according to the composition of the thermoplastic resin composition, and is not particularly limited, but may be a method of natural cooling or a method of blowing cool air. .

  The solidification temperature of the thermoplastic resin composition is not particularly limited, but is preferably lower than the melting point of the metal foil. More specifically, the solidification temperature of the thermoplastic resin composition is preferably 10 ° C. or more lower than the melting point of the metal foil, and particularly preferably 20 ° C. or lower. The solidification temperature of the thermoplastic resin composition is preferably 50 ° C. or higher, particularly preferably 60 ° C. or higher, and further preferably 100 ° C. or higher. When the solidification temperature of the thermoplastic resin composition is within the above range, the conductive region can be reliably formed, and the insulating region can have a desired heat resistance. For this reason, the insulation between adjacent terminals is ensured, and a short circuit between adjacent terminals can be more reliably prevented.

  In the connection method of the present invention, by applying ultrasonic waves between the opposing substrates as described above, the aggregation of the metal foil between the terminals is controlled or promoted to electrically connect the terminals, Insulation between adjacent terminals can be ensured.

2. Next, a method for manufacturing a semiconductor device of the present invention will be described. The method of manufacturing a semiconductor device of the present invention is to electrically connect each electronic material using the connection method between terminals described in the above-mentioned “1. Connection method between terminals”. Depending on the connection mode, it can be divided into the following five modes. Each aspect will be described below.

(1) First Aspect A method for manufacturing a semiconductor device according to a first aspect includes a first semiconductor chip having a circuit surface provided with a first connection terminal, and a circuit surface provided with a second connection terminal. A method for manufacturing a semiconductor device comprising: a second semiconductor chip having:
The method includes a step of electrically connecting the first connection terminal and the second connection terminal by using the connection method between terminals described in “1. Connection method between terminals”. .

FIG. 2 shows an example of a process explanatory diagram of the semiconductor device manufacturing method according to the first aspect of the present invention. As shown in FIG. 2A, first, the semiconductor chip 10 provided with the connection terminals 11 and the semiconductor chip 20 provided with the connection terminals 21 are arranged on the surface (circuit surface) on which the connection terminals 11 and 21 are provided. ) So that they face each other. The surfaces of the connection terminal 11 and the connection terminal 21 may be subjected to treatments such as cleaning, polishing, plating, and surface activation in advance. Further, an UBM (Under Burrier Metal) layer 140 may be formed on the lower surfaces of the connection terminal 11 and the connection terminal 21 using Ti, Ti / Cu, Cu, Ni, Cr / Ni, or the like. The UBM layer 140 may be a single layer or a plurality of layers. Note that the surface of the semiconductor chips 10 and 20 may be previously subjected to surface stabilization treatment for the purpose of protecting the semiconductor element, and a passive film 150 such as a SiN film may be formed. Further, a protective film 160 may be formed on the surfaces of the semiconductor chip 10 and the semiconductor chip 20 so as to open the connection terminals 11 and 21, respectively. Examples of the protective film 160 include polyimide resin, polybenzoxazole resin, and benzocyclobutene resin. Thereby, the metal foil 110 is easily guided between the connection terminals 11 and 21 facing each other, and the electrical connection between the connection terminals 11 and 21 can be improved. The protective film 160 can also function as a stress relaxation layer. Note that the shape of the protective film 160 is not limited to the illustrated shape as long as it has the above function.

  Next, as shown in FIG. 2B, when the conductive connecting material 100 is disposed between the semiconductor chip 10 and the semiconductor chip 20 and the resin composition 120 is a thermosetting resin composition, the metal foil 110 The conductive connecting material 100 is heated to a temperature that is equal to or higher than the melting point and does not complete the curing of the thermosetting resin composition. When the resin composition 120 is a thermoplastic resin composition, the melting point of the metal foil 110 is not lower than the melting point of the metal foil 110, and the melt viscosity of the thermoplastic resin composition is preferably 100 Pa · s or less, more preferably 50 Pa · s. Hereinafter, heating is performed particularly preferably at a temperature of 10 Pa · s or less. By heating, the metal foil 110 is melted. While heating, the metal foil is completely melted immediately before the metal foil is melted, and between the semiconductor chips 10 and 20 facing each other until the movement of the melted metal foil is completed. 2C, the aggregation of the metal foil 110 between the opposing connection terminals 11 and 21 is promoted to form the conductive region 300, as shown in FIG. 21 are electrically connected. On the other hand, a resin composition is filled in the gap between the conductive regions to form the insulating region 400, and insulation between adjacent connection terminals can be ensured.

  In the manufacturing method of the first aspect of the present invention, by applying ultrasonic waves between the semiconductor chips 10 and 20, the aggregation of the metal foil can be controlled or promoted, and the electrical connection between the semiconductor chip and the semiconductor chip is achieved. Easy connection.

  2 illustrates the case where the circuit surfaces of the semiconductor chips are connected to face each other. For example, in the case of manufacturing a multistage stack type semiconductor device, the circuit surfaces of the semiconductor chips may be connected to face each other. Sometimes it is not possible. Even in such a case, the semiconductor device can be manufactured by using the manufacturing method of the first aspect of the present invention.

FIG. 3 is a schematic cross-sectional view of a multi-stage stack type semiconductor device.
As shown in FIG. 3, the multi-stack semiconductor device 1 includes a semiconductor chip 10 having a connection terminal 11 and a semiconductor chip 20 having a connection terminal 21, with the connection terminal 11 and the connection terminal 21 facing each other. It is electrically connected through the conductive region 300. The semiconductor chip 10 and the semiconductor chip 20 can be connected in the same manner as in the first embodiment.
Further, in the multi-stage stack type semiconductor device 1, the connection electrode 22 on the surface (back surface) opposite to the surface on which the connection terminal 21 of the semiconductor chip 20 is provided and the semiconductor chip 30 having the connection electrode 31 are connected to the connection electrode 22. With the connection terminals 31 facing each other, they are electrically connected via the conductive region 300 ′. The semiconductor chip 20 and the semiconductor chip 30 can be connected in the same manner as in the first embodiment.

At this time, since there is a conductive through hole 220 in the thickness direction of the semiconductor chip 20, the semiconductor chip 10, the semiconductor chip 20, and the semiconductor chip 30 are connected to the connection terminal 11, the conductive region 300, the connection terminal 21, Electrical connection is made through the through hole 220, the connection electrode 22, the conductive region 300 ′, and the connection electrode 31.

  For example, the through hole 220 is formed with a through hole in the thickness direction of the semiconductor chip 20 by drilling, laser processing, or the like, plated on the inner wall surface of the through hole, and a resin agent is placed in the plated through hole. It is formed by filling or filling a metal by plating. For details of the through hole, reference can be made to, for example, Japanese Patent Application Laid-Open Nos. 2001-127243 and 2002-026241. The gap between the semiconductor chip 20 and the semiconductor chip 30 is filled with an insulating resin to form an insulating region 400, and the adjacent connection terminals are electrically insulated by the insulating region 400. In the manufacturing method of the first aspect, in such a multi-stage stack type semiconductor device, even when the circuit surface of the semiconductor chip faces the surface opposite to the circuit surface of the semiconductor chip, a through hole is formed in the thickness direction. By using the semiconductor chip, the semiconductor chip and the semiconductor chip can be electrically connected. Even when the circuit surfaces of the semiconductor chips are arranged so as not to oppose each other, the connection terminals can be electrically connected by the same method by forming through holes in the thickness direction of both semiconductor chips.

In the first aspect, the ultrasonic wave between the terminals in the heating application step in the heating step is the same as the range described in the connection method of the present invention. The heating temperature is preferably 100 to 250 ° C, more preferably 110 to 240 ° C, and still more preferably 120 to 230 ° C because it varies depending on the composition of the metal foil 110 and the resin composition 120 used.
The ultrasonic waves generated between the terminals include longitudinal vibrations and lateral vibrations, preferably transverse vibrations, and the amplitude is 1 μm or more, more preferably 3 μm, and even more preferably 5 μm or more. Usually, it is 40 μm or less, preferably 30 μm or less, and more preferably 25 μm or less.
The frequency is preferably 8 kHz or more, and more preferably 10 kHz or more. Usually, it is 40 kHz or less, preferably 30 kHz or less.
The applied pressure is 0.05 MPa or more, more preferably 0.1 MPa or more, and further preferably 0.15 MPa. Moreover, it is 5 MPa or less normally, More preferably, it is 4 MPa or less, More preferably, it is 3 MPa or less.
In addition, as a method of applying ultrasonic waves, a device for generating ultrasonic waves may be incorporated in the head or stage to be heated, and ultrasonic waves may be applied from the upper side or the lower side, and from one side or both upper and lower sides. Sound waves may be applied. The application time of the ultrasonic wave is preferably 0.1 seconds or more, more preferably 0.5 seconds or more, and further preferably 1 second or more. Further, it is usually 60 seconds or shorter, preferably 30 seconds or shorter, more preferably 20 seconds or shorter.
In addition, although this embodiment demonstrated the form which applies an ultrasonic wave, heating a conductive connection material in a heating application process, the timing which applies an ultrasonic wave is completely before a metal foil melts. Application may be performed until the metal foil is melted and the movement of the metal foil is completed.

(2) Second Aspect A semiconductor device manufacturing method according to a second aspect of the present invention includes a semiconductor chip having a circuit surface provided with a first connection terminal, and a circuit surface provided with a second connection terminal. A method for manufacturing a semiconductor device comprising a substrate having
The method includes a step of electrically connecting the connection terminals of the semiconductor chip and the connection terminals of the substrate using the connection method between terminals described in “1. Connection method between terminals”.

In the second aspect, the connection terminal of the semiconductor chip and the connection terminal of the substrate are electrically connected using the connection method of the present invention, but the connection terminal of the semiconductor chip and the connection terminal of the substrate are electrically connected. The method is the same as that of the first embodiment except that one of the two semiconductor chips is changed to a substrate. FIG. 4 shows an example of a schematic sectional view of a substrate used in the present invention. As shown in FIG. 4, a circuit layer 170 is formed on the base material 40, and an insulating layer 180 is formed on the base material 40 and the circuit layer 170 using a solder resist to form a wiring pattern. . A Ni / Au plating layer 190 is formed in the circuit layer opening, and constitutes a connection terminal (electrode pad) 41. In this embodiment, the connection terminals of the semiconductor chip and the substrate are formed in the same manner as in the method of manufacturing the semiconductor device of the first embodiment except that the connection terminals 41 on the substrate are formed on the circuit surface as described above. The connection terminal 41 can be electrically connected. Note that the configuration of the substrate illustrated in FIG. 4 is an example. If the circuit is formed on the base material and has a connection terminal, the structure is not particularly limited.

  In the second aspect, the circuit surface of the semiconductor chip and the circuit surface of the substrate are preferably arranged to face each other, but the circuit surface of the semiconductor chip faces the surface opposite to the circuit surface of the substrate. If the surfaces opposite to the circuit surfaces of the two are disposed to face each other, use a semiconductor chip and / or a substrate in which through holes are formed in the thickness direction. Thus, the semiconductor chip and the substrate can be electrically connected by the same method.

In the second aspect of the present invention, the heating temperature in the heating application step and the ultrasonic waves generated between the semiconductor chip and the substrate in the heating application step are the same as the ranges described in the connection method between terminals of the present invention. Although it does not restrict | limit especially because it changes with compositions etc. of the metal foil 110 and the resin composition 120 to be used, 100-250 degreeC is preferable, as for heating temperature, More preferably, it is 110-240 degreeC, More preferably, it is 120-230 degreeC.
In addition, the ultrasonic wave generated between the semiconductor chip and the substrate has longitudinal vibration and lateral vibration, but is preferably transverse vibration, and the amplitude is 1 μm or more, more preferably 3 μm, and further preferably 5 μm or more. Usually, it is 40 μm or less, preferably 30 μm or less, and more preferably 25 μm or less.
The frequency is preferably 8 kHz or more, and more preferably 10 kHz or more. Usually, it is 40 kHz or less, preferably 30 kHz or less.
The pressure is 0.05 MPa or more, more preferably 0.1 MPa or more, and further preferably 0.15 MPa. Moreover, it is 5 MPa or less normally, More preferably, it is 4 MPa or less, More preferably, it is 3 MPa or less.
In addition, as a method of applying ultrasonic waves, a device for generating ultrasonic waves may be incorporated in the head or stage to be heated, and ultrasonic waves may be applied from the upper side or the lower side, and from one side or both upper and lower sides. Sound waves may be applied. The application time of the ultrasonic wave is preferably 0.1 seconds or more, more preferably 0.5 seconds or more, and further preferably 1 second or more. Further, it is usually 60 seconds or shorter, preferably 30 seconds or shorter, more preferably 20 seconds or shorter.
In addition, although this embodiment demonstrated the form which applies an ultrasonic wave, heating a conductive connection material in a heating application process, the timing which applies an ultrasonic wave is completely before a metal foil melts. Application may be performed until the metal foil is melted and the movement of the metal foil is completed.

(3) Third Aspect A semiconductor device manufacturing method according to a third aspect of the present invention is provided with a first substrate having a circuit surface provided with a first connection terminal, and a second connection terminal. A method of manufacturing a semiconductor device comprising a second substrate having a circuit surface,
The method includes the step of electrically connecting the first connection terminal and the second connection terminal using the connection method between terminals described in “1. Connection method between terminals”.

In the third aspect, the connection terminals facing each other on the substrate are electrically connected using the connection method between terminals of the present invention, but the first connection terminal and the second connection terminal are electrically connected. The method to do is the same as the first mode except that the semiconductor chip is changed to the substrate. Further, in the third aspect, it is preferable that the circuit surfaces of the substrates are arranged to face each other, but the circuit surface of the first substrate and the surface opposite to the circuit surface of the second substrate are opposed to each other. If the surface opposite to the circuit surface is disposed opposite to each other, the same method can be used by using a build-up substrate in which through holes are formed in the thickness direction on one or both sides. Thus, the two substrates can be electrically connected.

In the third aspect of the present invention, the heating temperature in the heating application step and the ultrasonic wave generated between the substrates in the heating application step are the same as the ranges described in the connection method between terminals of the present invention. The heating temperature is preferably 100 to 250 ° C, more preferably 110 to 240 ° C, and still more preferably 120 to 230 ° C because it varies depending on the metal foil used and the composition of the resin composition.
The ultrasonic waves generated between the substrates include longitudinal vibrations and lateral vibrations, preferably transverse vibrations, with an amplitude of 1 μm or more, more preferably 3 μm, and even more preferably 5 μm or more. Usually, it is 40 μm or less, preferably 30 μm or less, and more preferably 25 μm or less.
The frequency is preferably 8 kHz or more, and more preferably 10 kHz or more. Further, it is usually 40 kHz or less, preferably 30 kHz or less.
The pressure is 0.05 MPa or more, more preferably 0.1 MPa or more, and further preferably 0.15 MPa. Moreover, it is 5 MPa or less normally, More preferably, it is 4 MPa or less, More preferably, it is 3 MPa or less.
In addition, as a method of applying ultrasonic waves, a device for generating ultrasonic waves may be incorporated in the head or stage to be heated, and ultrasonic waves may be applied from the upper side or the lower side, and from one side or both upper and lower sides. Sound waves may be applied. The application time of the ultrasonic wave is preferably 0.1 seconds or more, more preferably 0.5 seconds or more, and further preferably 1 second or more. Further, it is usually 60 seconds or shorter, preferably 30 seconds or shorter, more preferably 20 seconds or shorter.
In addition, although this embodiment demonstrated the form which applies an ultrasonic wave, heating a conductive connection material in a heating application process, the timing which applies an ultrasonic wave is completely before a metal foil melts. Application may be performed until the metal foil is melted and the movement of the metal foil is completed.

  The semiconductor device manufacturing method of the third aspect is particularly useful when, for example, the substrates are electrically connected in a package-on-package semiconductor device in which semiconductor packages are connected to each other.

(4) Fourth Aspect A semiconductor device manufacturing method according to a fourth aspect of the present invention includes a first semiconductor chip having a circuit surface provided with a first connection terminal, and a second connection terminal. A semiconductor device comprising a second semiconductor wafer having a closed circuit surface,
The method includes the step of electrically connecting the first connection terminal and the second connection terminal using the connection method between terminals described in “1. Connection method between terminals”.

  In the fourth aspect, the connection terminals facing each other on the substrate are electrically connected using the connection method between terminals of the present invention, but the first connection terminal and the second connection terminal are electrically connected. The method is the same as in the first embodiment except that one semiconductor chip is changed to a semiconductor wafer, and each connection terminal provided on the circuit surface of the semiconductor chip is connected to another semiconductor wafer facing each other. It connects with each connection terminal provided on the circuit surface. In the fourth aspect, the circuit surfaces of the semiconductor chip and the semiconductor wafer are preferably arranged to face each other, but the circuit surface of the semiconductor chip and the surface opposite to the circuit surface of the semiconductor wafer face each other. If the surface opposite to the circuit surface is disposed facing each other, by using a semiconductor chip or a semiconductor wafer in which through-holes are formed in the thickness direction on one or both, The semiconductor chip and the semiconductor wafer can be electrically connected by the same method.

In the fourth aspect of the present invention, the heating temperature in the heating application step and the ultrasonic wave generated between the semiconductor chip and the semiconductor wafer in the heating application step are the same as the ranges described in the method for manufacturing the terminal of the present invention, The heating temperature is preferably 100 to 250 ° C, more preferably 120 to 240 ° C, although it is not particularly limited because it varies depending on the metal foil and the composition of the resin composition.
The ultrasonic wave generated between the semiconductor chip and the semiconductor wafer includes longitudinal vibration and lateral vibration, but preferably lateral vibration, and the amplitude is 1 μm or more, more preferably 3 μm, and further preferably 5 μm or more. Usually, it is 40 μm or less, preferably 30 μm or less, and more preferably 25 μm or less.
The frequency is preferably 8 kHz or more, and more preferably 10 kHz or more. Usually, it is 40 kHz or less, preferably 30 kHz or less.
The pressure is 0.05 MPa or more, more preferably 0.1 MPa or more, and further preferably 0.15 MPa. Moreover, it is 5 MPa or less normally, More preferably, it is 4 MPa or less, More preferably, it is 3 MPa or less.
In addition, as a method of applying ultrasonic waves, a device for generating ultrasonic waves may be incorporated in the head or stage to be heated, and ultrasonic waves may be applied from the upper side or the lower side, and from one side or both upper and lower sides. Sound waves may be applied. The application time of the ultrasonic wave is preferably 0.1 seconds or more, more preferably 0.5 seconds or more, and further preferably 1 second or more. Further, it is usually 60 seconds or shorter, preferably 30 seconds or shorter, more preferably 20 seconds or shorter.
In addition, although this embodiment demonstrated the form which applies an ultrasonic wave, heating a conductive connection material in a heating application process, the timing which applies an ultrasonic wave is completely before a metal foil melts. Application may be performed until the metal foil is melted and the movement of the metal foil is completed.

(5) Fifth Aspect A semiconductor device manufacturing method according to a fifth aspect of the present invention includes a first semiconductor wafer having a circuit surface provided with a first connection terminal, and a second connection terminal. A semiconductor device comprising a second semiconductor wafer having a closed circuit surface,
The method includes the step of electrically connecting the first connection terminal and the second connection terminal using the connection method between terminals described in “1. Connection method between terminals”.

  In the fifth aspect, the connection terminals facing each other on the substrate are electrically connected using the connection method between terminals of the present invention, but the first connection terminal and the second connection terminal are electrically connected. The method is the same as in the first embodiment except that the semiconductor chip is changed to a semiconductor wafer, and each connection terminal provided on the circuit surface of the semiconductor wafer is connected to the circuit of another semiconductor wafer facing each other. Connect to each connection terminal provided on the surface. Further, in the fifth aspect, it is preferable that the circuit surfaces of the semiconductor wafer are arranged to face each other, but the surface opposite to the circuit surface of the first semiconductor wafer and the circuit surface of the third semiconductor wafer. When the semiconductor wafer with through-holes formed in the thickness direction is used for one or both, when the surface opposite to the circuit surface is disposed to face each other, or both, The two semiconductor wafers can be electrically connected by the same method.

In the fifth aspect of the present invention, the heating temperature in the heating application step and the ultrasonic wave generated between the semiconductor wafers in the heating application step are the same as the ranges described in the method for manufacturing a terminal of the present invention, and the metal foil used The heating temperature is preferably 100 to 250 ° C, more preferably 120 to 240 ° C, although it is not particularly limited because it varies depending on the composition of the resin composition.
In addition, ultrasonic waves generated between semiconductor wafers include longitudinal vibrations and lateral vibrations, but transverse vibrations are preferred, and amplitudes are 1 μm or more, more preferably 3 μm, and even more preferably 5 μm or more. Also, it is usually 40 μm or less, preferably 30 μm or less, and more preferably 25 μm or less.
The frequency is preferably 8 kHz or more, and more preferably 10 kHz or more. Usually, it is 40 kHz or less, preferably 30 kHz or less.
The pressure is 0.05 MPa or more, more preferably 0.1 MPa or more, and further preferably 0.15 MPa. Moreover, it is 5 MPa or less normally, More preferably, it is 4 MPa or less, More preferably, it is 3 MPa or less.
In addition, as a method of applying ultrasonic waves, a device for generating ultrasonic waves may be incorporated in the head or stage to be heated, and ultrasonic waves may be applied from the upper side or the lower side, and from one side or both upper and lower sides. Sound waves may be applied. The application time of the ultrasonic wave is preferably 0.1 seconds or more, more preferably 0.5 seconds or more, and further preferably 1 second or more. Further, it is usually 60 seconds or shorter, preferably 30 seconds or shorter, more preferably 20 seconds or shorter.
In addition, although this embodiment demonstrated the form which applies an ultrasonic wave, heating a conductive connection material in a heating application process, the timing which applies an ultrasonic wave is completely before a metal foil melts. Application may be performed until the metal foil is melted and the movement of the metal foil is completed.

3. Next, a method for forming a connection terminal according to the present invention will be described.
The method for forming a connection terminal of the present invention (hereinafter sometimes referred to as “the connection method of the present invention”) is a method of forming a connection terminal via a metal foil, from a resin composition and a solder foil or tin foil. An arrangement step of arranging a conductive connection material having a laminated structure composed of a selected metal foil on a terminal, heating the conductive connection material at a temperature equal to or higher than the melting point of the metal foil, and applying ultrasonic waves to the substrate And applying a heating application step. In the method for forming a connection terminal according to the present invention, the metal foil is melted and ultrasonic waves are applied to the substrate. According to a preferred aspect of the present invention, this makes it possible to control or promote the aggregation of the molten metal foil on the terminals where the connection terminals are to be formed, thereby enabling the formation between the connection terminals.
According to a preferred aspect of the present invention, the aggregation of the metal foil can be controlled or promoted as described above, so that a large number of connection terminals can be formed at once even in a fine wiring circuit.

Next, an outline of a method for forming a connection terminal according to the present invention will be described with reference to FIG.
As shown in FIG. 5A, the conductive connection material 100 including the metal foil 110 and the resin composition 120 is disposed on the terminal 41 provided on the circuit surface of the base material 40. Although not shown, the terminal surface may be subjected to treatments such as cleaning, polishing, plating, and surface activation in order to improve electrical connection.

  The conductive connecting material 100 arranged in this manner is heated at a temperature equal to or higher than the melting point of the metal foil 110 as shown in FIG. Then, as shown in FIG. 5C, the metal foil 110 aggregates on the terminal 41 to form the conductive region 300, and the connection terminal 200 is formed. On the other hand, the resin composition 120 fills the gaps between the conductive regions 300 and forms the insulating regions 210 to ensure insulation between adjacent terminals.

  Thus, according to a preferred aspect of the present invention, it is possible to form a large number of connection terminals in a lump and to ensure insulation between adjacent terminals. According to the preferred embodiment of the present invention, the aggregation of the metal foil can be controlled, so that it is possible to form a large number of connection terminals at once, and there is an advantage that the connection reliability is excellent. Hereafter, each process of the formation method of the connection terminal of this invention is demonstrated in detail.

(1) Arrangement Step In the arrangement step, the conductive connection material 100 having a laminated structure composed of the resin composition 120 and the metal foil 110 selected from solder foil or tin foil is arranged on the terminal. The method for disposing the conductive connecting material 100 on the terminal 41 is not particularly limited, and the terminal 41 can be formed by a method such as lamination.
The method of arrange | positioning without contacting, the method of arrange | positioning without contacting, etc. are mentioned.
About the conductive connection material 100 having a laminated structure composed of the resin composition 120 and a metal foil 110 selected from solder foil or tin foil, the same one as described in “1. Connection method between terminals” is used. Since it is used, the explanation is omitted here.

(2) Heat application step In the heat application step, the conductive connecting material 100 is heated at a temperature equal to or higher than the melting point of the metal foil 110. When the resin composition 120 is a thermosetting resin composition, the heating temperature is equal to or higher than the melting point of the metal foil 110 and is heated at a temperature at which the curing of the thermosetting resin composition is not completed. Here, “the temperature at which the curing of the thermosetting resin composition is not completed” means that the melt viscosity of the thermosetting resin composition is preferably 100 Pa · s or less, more preferably 50 Pa · s or less, and particularly preferably 10 Pa. -It means a temperature that is s or less. However, in the connection method of the present invention, in order to prevent the conductive connection material from protruding from the substrate when heated, the melt viscosity of the thermosetting resin composition is preferably 0.001 Pa · s or more, more preferably Heating is performed at a temperature of 0.005 Pa · s or more, particularly preferably 0.01 Pa · s or more. The heating temperature only needs to be equal to or higher than the melting point of the metal foil. The upper limit is not particularly limited as long as the melting viscosity can be satisfied by adjusting the heating time, for example, shortening the heating time.

  When the resin composition 120 is a thermoplastic resin composition, the melting point of the metal foil 110 is not lower than the melting point of the metal foil 110, and the melt viscosity of the thermoplastic resin composition is preferably 100 Pa · s or less, more preferably 50 Pa · s. Hereinafter, heating is performed particularly preferably at a temperature of 10 Pa · s or less. However, in the connection method of the present invention, the melt viscosity of the thermoplastic resin composition is preferably 0.001 Pa · s or more, more preferably, in order to prevent the conductive connection material from protruding from the substrate when heated. Heating is performed at a temperature of 0.005 Pa · s or more, particularly preferably 0.01 Pa · s or more.

  By heating the resin composition 120 at the above temperature, the molten metal foil 110 can move in the resin composition 120, so that the metal foil 110 easily collects on the terminal, and the connection terminal 200 is formed on the terminal 41. Can be formed. When heating, the upper side of the conductive connection material 100 may be heated and pressurized from above and below by placing glass or a film subjected to a release treatment. Specifically, for example, heating and pressurization can be performed from the vertical direction of the substrate 10 in FIG. 6B using a means such as a press heater, and the distance between the press heater and the base material 40 is controlled to be constant. Thus, the molten metal foil 110 can be easily collected on the terminal 41, and the connection terminal 200 with higher reliability can be formed.

  The heating temperature is not particularly limited, and may be appropriately selected depending on the composition of the metal foil 110 and the resin composition 120 to be used. The heating temperature is usually 100 ° C. or higher, preferably 130 ° C. or higher, more preferably 140 ° C. or higher, and further preferably 150 ° C. or higher. In order to prevent thermal deterioration of the electronic material to be connected, the heating temperature is usually 250 ° C. or lower, preferably 240 ° C. or lower, more preferably 230 ° C. or lower, and further preferably 220 ° C. or lower.

  Subsequently, in the heating application step, ultrasonic waves are applied to the substrate 40. By applying ultrasonic waves to the terminals, the substrate 40 is vibrated by ultrasonic waves. Applying ultrasonic waves while heating and raising the temperature of the conductive connecting material 100 at a temperature near the melting point of the metal foil 110, and heating it to a temperature equal to or higher than the melting point of the metal foil causes the metal foil 110 to melt and promote aggregation on the terminals 41. Then, the connection terminal is formed by metal bonding between the terminal and the metal foil. It is preferable to apply ultrasonic waves until the melting and movement of the metal foil 110 are completed. On the other hand, the insulating resin composition 110 is filled in the gap between the connection terminals 200 to form the insulating region 210. The insulation between the adjacent connection terminals 200 is ensured. Thereby, a short circuit between adjacent connection terminals 200 can be prevented.

In the heating application step, the ultrasonic wave applied to the base material 40 has longitudinal vibration and lateral vibration, but is preferably transverse vibration, and the amplitude is 1 μm or more, more preferably 3 μm, and further preferably 5 μm or more. Also, it is usually 40 μm or less, preferably 30 μm or less, and more preferably 25 μm or less.
The frequency is preferably 8 kHz or more, and more preferably 10 kHz or more. Usually, it is 40 kHz or less, preferably 30 kHz or less.
The pressure is 0.05 MPa or more, more preferably 0.1 MPa or more, and further preferably 0.15 MPa. Moreover, it is 5 MPa or less normally, More preferably, it is 4 MPa or less, More preferably, it is 3 MPa or less.
In order to apply ultrasonic waves, it is only necessary to incorporate a device for generating ultrasonic waves in the head or stage to be heated. The application may be from the upper side or the lower side, and may be applied from one side or both upper and lower sides. Good.
The application time of the ultrasonic wave is preferably 0.1 seconds or more, more preferably 0.5 seconds or more, and further preferably 1 second or more. Further, it is usually 60 seconds or shorter, preferably 30 seconds or shorter, more preferably 20 seconds or shorter.
In addition, although this embodiment demonstrated the form which applies an ultrasonic wave, heating a conductive connection material in a heating application process, the timing which applies an ultrasonic wave is completely before a metal foil melts. It may be applied until the metal foil has been moved and the metal foil has been moved, but for the time until the movement is completed, check the relationship between the heating time and temperature and the connection state using the actual board and components used. This may be set as appropriate.
In the present invention, while being heated, the metal foil 110 is completely melted immediately before melting, and until the movement of the melted metal foil 110 is completed, the opposing base material 40 is subjected to ultrasonic vibration. Thus, the molten metal foil 100 can be aggregated on the terminal.

The connection terminal 200 formed through the above-described steps can be used as a connection terminal 200 for connection for mounting an electronic component such as a semiconductor chip or a capacitor, a substrate, or the like.
Further, the resin composition forming the insulating region 210 may be cured after the heating application step or after the electronic component or the substrate is mounted on the connection terminal 200.

  The present invention can be used in various fields where connection between terminals or connection terminals between electronic materials including a semiconductor device is required. In particular, the present invention is useful when connecting between minute terminals or forming connection terminals. By using the connection method between terminals or the formation method of the connection terminal of the present invention, it is possible to meet the demand for higher functionality and downsizing of electronic devices.

DESCRIPTION OF SYMBOLS 1 Semiconductor measures 10, 20, 30 Board | substrate 11, 21, 31 Terminal 22 Connection electrode 40 Base material 41 Connection terminal (electrode pad)
DESCRIPTION OF SYMBOLS 110 Metal foil 120 Resin composition 140 UBM layer 150 Passive film 160 Protective film 170 Circuit layer 180 Insulating layer 190 Ni / Au plating layer 200 Connection terminal 210 Insulating region 220 Through hole 300, 300 'Conductive region 400 Insulating region

Claims (22)

A method of electrically connecting terminals via a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil,
An arrangement step of arranging the conductive connection material between opposing terminals;
A heating application step of heating the conductive connection material at a temperature equal to or higher than the melting point of the metal foil and applying an ultrasonic wave,
A solidification and curing step for solidifying or curing the resin composition;
A method of connecting between terminals, including   The method for connecting terminals according to claim 1, wherein the metal foil melted in the heating application step is aggregated between the terminals and the terminals are electrically connected.   The connection method between terminals according to claim 1 or 2, wherein application of ultrasonic waves is started before the metal foil is melted in the heating application step.   The method for connecting between terminals according to claim 1, wherein the metal foil is a solder foil.   The method for connecting terminals according to claim 1, wherein the resin composition contains a thermosetting resin.   The method for connecting terminals according to claim 1, wherein the resin composition contains a curing agent.   The method for connecting terminals according to claim 1, wherein the resin composition contains a compound having a flux function.   The method for connecting terminals according to claim 7, wherein the compound having a flux function includes a compound having a phenolic hydroxyl group and / or a carboxyl group. The method for connecting terminals according to claim 7 or 8, wherein the compound having the flux function includes a compound represented by the following general formula (1).
_{HOOC- (CH 2) n-COOH} ····· (1)
[In formula, n is an integer of 1-20. ] The method for connecting terminals according to claim 7 or 8, wherein the compound having the flux function includes a compound represented by the following general formula (2) and / or (3).

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ] A method for manufacturing a semiconductor device, comprising: a first semiconductor chip having a circuit surface provided with a first connection terminal; and a second semiconductor chip having a circuit surface provided with a second connection terminal. And
A method for manufacturing a semiconductor device, comprising the step of electrically connecting the first connection terminal and the second connection terminal using the connection method between terminals according to claim 1. A method of manufacturing a semiconductor device, comprising: a semiconductor chip having a circuit surface provided with a first connection terminal; and a substrate having a circuit surface provided with a second connection terminal,
A method for manufacturing a semiconductor device, comprising: electrically connecting a connection terminal of the semiconductor chip and a connection terminal of the substrate using the connection method between terminals according to claim 1. A method of manufacturing a semiconductor device comprising: a first substrate having a circuit surface provided with a first connection terminal; and a second substrate having a circuit surface provided with a second connection terminal,
A method for manufacturing a semiconductor device, comprising the step of electrically connecting the first connection terminal and the second connection terminal using the connection method between terminals according to claim 1. A method for manufacturing a semiconductor device, comprising: a first semiconductor chip having a circuit surface provided with a first connection terminal; and a second semiconductor wafer having a circuit surface provided with a second connection terminal. And
A method for manufacturing a semiconductor device, comprising the step of electrically connecting the first connection terminal and the second connection terminal using the connection method between terminals according to claim 1. A method for manufacturing a semiconductor device, comprising: a first semiconductor wafer having a circuit surface provided with a first connection terminal; and a second semiconductor wafer having a circuit surface provided with a second connection terminal. And
A method for manufacturing a semiconductor device, comprising the step of electrically connecting the first connection terminal and the second connection terminal using the connection method between terminals according to claim 1. A method of forming a connection terminal on a terminal through a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil,
An arrangement step of arranging the conductive connection material on a terminal;
And a heating application step of heating the conductive connection material at a temperature equal to or higher than the melting point of the metal foil and applying an ultrasonic wave.   The method for forming a connection terminal according to claim 16, wherein the metal foil melted in the heating application step is aggregated on the terminals and the terminals are electrically connected. The method for forming a connection terminal according to claim 16 or 17, wherein application of ultrasonic waves is started before the metal foil is melted in the heating application step.   The method for forming a connection terminal according to claim 16, wherein the metal foil is a solder foil.   The method for forming a connection terminal according to claim 16, wherein the resin composition includes a thermosetting resin.   The method for forming a connection terminal according to claim 16, wherein the resin composition contains a curing agent.   The method for forming a connection terminal according to claim 16, wherein the resin composition contains a compound having a flux function.

Images