JP2011175950A - Circuit board to mount semiconductor light emitting device, light emitting module, and lighting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technology regarding improvement of heat dissipation performance of heat generated in a semiconductor light emitting device capable of toning. <P>SOLUTION: The semiconductor light emitting device has: a base material part which is equipped with at least a package, a semiconductor light emitting element, and a phosphor, and which is a circuit board in order to mount the semiconductor light emitting device, and is formed by using a heat conductive material on which the semiconductor light emitting device is mounted; and a power supply part to supply power to respective semiconductor light emitting elements by making at least one divided region part and the other divided region parts as a separated system out of a plurality of divided region parts which the package of the semiconductor light emitting device has. The power supply part is formed by using the heat conductive material, and in a planar state so as to cover the base material part. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a circuit board, a light emitting module, and a lighting device for mounting a semiconductor light emitting device that emits light to the outside by light emission from a semiconductor light emitting element.

  In recent years, illumination devices using light-emitting diodes (LEDs), which are semiconductor light-emitting elements, have been widely proposed in place of conventional illumination devices for energy saving and various other purposes. . Further, LEDs are also expected as a light source for color tone variable illumination that has been difficult to achieve with conventional light sources. As an example, a lighting device that outputs white light by making red LED, green LED, and blue LED into one package is disclosed (see, for example, Patent Document 1). In this technology, by adjusting the drive current supplied to the three types of LEDs according to the forward voltage of each LED, the luminous efficiency of each LED is made constant and the brightness of white light is stabilized. In addition, it is devised to emit light of various colors.

  In addition, as a lighting technology using LEDs, by combining a blue LED and a semiconductor light emitting device that emits red, blue, and green light using phosphors for red and green coloring, the output of the LED is controlled. A technique for tracing a black body radiation locus and emitting white light close to natural light is disclosed (see, for example, Patent Documents 1 to 3).

  Also, in a semiconductor light emitting device that emits light to the outside by light emission from the package on which the semiconductor light emitting element is mounted, the light output surface from the package is divided into a plurality of parts, each corresponding to the semiconductor light emitting element and the fluorescent part Thus, there are proposed semiconductor light emitting devices, light emitting modules, and the like that can be toned (variable in color tone) so that the spectrum of light output from the output surface is different from each other by arranging them (for example, patents) (Refer to Reference 4). In this type of semiconductor light emitting device, for example, the color temperature of light output from the semiconductor light emitting device is controlled by controlling the power supplied to the corresponding semiconductor light emitting element for each output surface of the package divided into a plurality of parts. It is possible to adjust.

JP 2005-1000079 A JP 2007-265818 A JP 2007-299590 A JP 2009-231525 A

  The semiconductor light emitting device has a characteristic that the amount of light emission decreases (becomes darker) as the temperature rises, and the lifetime is shortened. For this reason, in particular, in a semiconductor light emitting device employed for lighting applications, it is necessary to improve the heat dissipation performance for releasing (releasing) heat generated in the semiconductor light emitting device to the outside as much as possible. Further, in the semiconductor light-emitting device capable of color matching, the power supply to the corresponding semiconductor light-emitting element is controlled independently for each output surface divided in the package. Concentration is likely to occur. Therefore, in semiconductor light-emitting devices and light-emitting modules that can be toned, there has been a situation in which defects such as a decrease in light-emission efficiency due to local heat concentration of the semiconductor light-emitting device and thermal deterioration of the semiconductor light-emitting element are easily manifested. .

  SUMMARY OF THE INVENTION In view of the above circumstances, an object of the present invention is to provide a technique related to an improvement in heat dissipation performance of heat generated in a toned semiconductor light emitting device.

In the present invention, the following means are adopted in order to solve the above-described problems.
That is, a circuit board for mounting a semiconductor light emitting device according to the present invention is:
A circuit board for mounting a semiconductor light emitting device including at least a package, a semiconductor light emitting element, and a phosphor,
The package in the semiconductor light emitting device is opened at an opening that opens in the emission direction of the semiconductor light emitting device and a divided opening that is defined by dividing the inside of the package into two or more and is a part of the opening. Having at least two or more divided region portions;
Each of the divided region portions is
One or more of the semiconductor light emitting elements;
A fluorescent portion including the phosphor and a translucent material that seals each divided region portion, and
In at least one divided region portion and the other divided region portion among the plurality of divided region portions, the spectrum of light output from the fluorescent portion is different from each other,
A base material portion formed using a heat conductive material on which the semiconductor light emitting device is mounted;
A power supply unit that supplies power to each of the semiconductor light emitting elements by using at least one of the plurality of divided region units and another divided region unit as separate systems;
Have
The power supply unit is formed in a planar shape so as to cover the base material unit using a heat conductive material.

Moreover, the light emitting module according to the present invention includes:
A light emitting module including at least a package, a semiconductor light emitting element, and a semiconductor light emitting device including a phosphor, and a circuit board for mounting the semiconductor light emitting device,
The package in the semiconductor light emitting device is opened at an opening that opens in the emission direction of the semiconductor light emitting device and a divided opening that is defined by dividing the inside of the package into two or more and is a part of the opening. Having at least two or more divided region portions;
Each of the divided region portions is
One or more of the semiconductor light emitting elements;
A fluorescent portion including the phosphor and a translucent material that seals each divided region portion, and
In at least one divided region portion and the other divided region portion among the plurality of divided region portions, the spectrum of light output from the fluorescent portion is different from each other,
The circuit board is
A base material portion formed using a heat conductive material on which the semiconductor light emitting device is mounted;
A power supply unit that supplies power to each of the semiconductor light emitting elements by using at least one of the plurality of divided region units and another divided region unit as separate systems;
Have
The power supply unit is formed in a planar shape so as to cover the base material unit using a heat conductive material.

  The semiconductor light emitting device mounted on the circuit board according to the present invention has at least one divided region portion and another portion inside the package so that the opening for emitting output light from the device is divided into two or more. A region portion is defined. The opening portions in these divided region portions are defined as the divided opening portions, and the divided opening portions occupy a part of the opening portions of the light emitting device main body. Each divided region portion includes a semiconductor light emitting element and a fluorescent portion. Then, for example, the output light from each semiconductor light emitting element excites and fluoresces the phosphor, and then goes through the translucent material together with the light emitted from the phosphor, and reaches the outside from the divided opening of the corresponding divided region.

  According to the present invention, power is supplied to each of the semiconductor light emitting elements by using at least one divided region portion and another divided region portion as a separate system among the plurality of divided region portions in the semiconductor light emitting device by the power supply portion of the circuit board. Will be supplied. As a result, the combined light of light having at least two types of spectra can reach the irradiation surface outside the semiconductor light emitting device, and the color temperature of the combined light can be made variable.

  Both the power supply section and the base material section on which the power supply section is formed are configured using a heat conductive material. Accordingly, in each divided region portion of the semiconductor light emitting device, heat generated with the power supply to the semiconductor light emitting elements included in these divided regions is transmitted to the base material portion via the power supply portion. Since the power supply unit according to this configuration is formed in a planar shape so as to cover the base material part, the locally concentrated heat in the semiconductor light emitting device is preferably dispersed in the in-plane direction of the base material part. Can do. Therefore, according to the power supply unit formed in a planar shape over the base material part in this way, heat can be taken from the semiconductor light emitting device more efficiently, and thus the heat dissipation performance in the semiconductor light emitting device is suitably enhanced. It becomes possible. Accordingly, it is possible to suitably suppress the occurrence of a decrease in light emission efficiency and a thermal deterioration accompanying a local temperature increase that is likely to be manifested in a semiconductor light emitting device capable of color matching.

  Here, the circuit board is provided with an insulating member for insulating the power supply units that supply power to semiconductor light emitting elements of different systems from each other, and the power supply unit is insulated for each system. It is good to be divided by the member in the in-plane direction of the base material part.

  In the circuit board, a heat radiating housing member is attached to the base portion so as to be in thermal contact with the non-mounting surface on which the semiconductor light emitting device is not mounted. The transmitted heat from the semiconductor light emitting device may be radiated from the heat radiating housing member to the atmosphere. As a result, heat conducted sequentially from the semiconductor light emitting device by the power supply unit and the base material unit included in the circuit board is released from the heat dissipation housing member into the atmosphere, so that the semiconductor light emitting device can supply the power supply unit. Heat transfer will be further promoted. Therefore, the heat dissipation performance in the semiconductor light emitting device can be improved more suitably.

  Further, when the present invention is regarded as a light emitting module, in the circuit board, a plurality of semiconductor light emitting devices are mounted on the base material portion, and the power supply units partitioned for each system by the insulating member are mutually connected in each of the semiconductor light emitting devices. You may make it connect the semiconductor light emitting elements contained in a corresponding division area part in series. The divided region portions corresponding to each other in each semiconductor light emitting device can refer to divided region portions having the same system of control systems for the semiconductor light emitting elements. Thereby, in a plurality of semiconductor light emitting devices, independent power supply control can be suitably realized for each corresponding divided region portion.

  Further, in the light emitting module, each of the plurality of semiconductor light emitting devices mounted on the base portion of the circuit board is annularly arranged with an equiangular interval between the semiconductor light emitting devices. When the reference is used as a reference, the relative positional relationship between the one divided region portion and the other divided region portion in the package is a rotation within the opening surface of the opening portion with respect to the adjacent semiconductor light emitting device. In the direction, 360 ° may be arranged in a state shifted by a predetermined angle defined by dividing the number of the semiconductor light emitting devices mounted on the base material portion.

  In the above configuration, the relative positional relationship of the semiconductor light emitting devices arranged in the light emitting module is uniformly rotated and shifted. Thus, when considered in units of light emitting modules, the output light from one divided area part and the output light from the other divided area part can be combined more uniformly and uniformly, and finally In the combined light emitted from the light emitting module, light separation is effectively suppressed.

  In this case, the power supply unit may be concentrically sectioned around a predetermined reference point in the base member surface for each system. According to this, the electric power supply part formed on the base-material part of a circuit board can be distributed orderly as a lump for every system | strain. Thereby, in the limited space called the base-material part surface of a circuit board, the area in which the electric power supply part is formed with respect to the base-material part total surface area, ie, the occupation area ratio of an electric power supply part, can be ensured as high as possible. Under the condition that the surface area of the base material portion is equal, the higher the occupation area ratio of the power supply unit, the more heat can be effectively removed from the semiconductor light emitting device. The heat dissipation performance can be enhanced as much as possible. Moreover, according to this structure, the usage-amount of the insulating member required, for example in order to insulate the electric power supply parts of another system can be reduced, and it is effective also from a viewpoint of the manufacturing cost reduction of a circuit board.

  Further, the present invention is in thermal contact with any of the light emitting modules described above and the non-mounting surface of the base material portion on which the semiconductor light emitting device is not mounted, with respect to the circuit board of the light emitting module. It is also possible to grasp as an illuminating device provided with a heat radiating housing member attached in this manner.

  The means for solving the problems in the present invention can be used in combination as much as possible.

  ADVANTAGE OF THE INVENTION According to this invention, the technique regarding the improvement of the heat dissipation performance of the heat | fever which generate | occur | produced in the semiconductor light-emitting device which can be toned can be provided.

1 is a perspective view of a schematic configuration of a package in a semiconductor light emitting device constituting a light emitting module according to Example 1. FIG. It is a figure which shows the mounting state of the wiring which supplies electric power to the semiconductor light-emitting device shown to FIG. 1A. FIG. 2 is a diagram schematically showing the semiconductor light emitting device shown in FIGS. 1A and 1B using electrical symbols. It is sectional drawing of the semiconductor light-emitting device shown in FIG. It is a figure which shows the connection relation of the semiconductor light-emitting element and base in the semiconductor light-emitting device shown in FIG. In the semiconductor light emitting device shown in FIG. 1, it is a figure which shows the relationship between the chromaticity point of the white light set to the output light from each division area part, and a black body radiation locus. FIG. 5 is an enlarged view of a main part of a relationship between a chromaticity point of white light and a black body radiation locus shown in FIG. 4. It is a figure which shows the correlation with the color temperature of output light, and luminous efficiency about the combination of the various semiconductor light-emitting devices and fluorescent substance which can be employ | adopted in the semiconductor light-emitting device shown in FIG. 1 is a perspective view illustrating a configuration of a light emitting module according to Example 1. FIG. It is a figure which shows simply about arrangement | positioning of the semiconductor light-emitting device in a light-emitting module. It is a figure which shows typically the electrical connection state between each light-emitting device of a light emitting module. It is a figure which shows the one aspect | mode of the electric current supplied to the light emitting module shown in FIG.7 and FIG.8. FIG. 3 is a diagram schematically showing an upper surface of a circuit board of a light emitting module according to Example 1. It is the figure which showed typically the cross section containing the AA cutting line of FIG. FIG. 3 is a diagram illustrating a state where each light emitting device is mounted on the circuit board according to the first embodiment. It is the figure which showed the illuminating device L containing the light emitting module, the housing member for thermal radiation, and the lens. 6 is a diagram illustrating a state where each light emitting device is mounted on a circuit board according to a first modification of Example 1. FIG. It is a figure which shows the state by which the light-emitting device was mounted in the circuit board which concerns on the 2nd modification of Example 1. FIG. 6 is a diagram showing a state where a light emitting device is mounted on a circuit board according to a third modification of Example 1. FIG. FIG. 10 is an explanatory diagram for explaining a board portion of a circuit board according to a third modification of Example 1; It is the figure which showed typically the upper surface of the circuit board of the light emitting module which concerns on Example 2. FIG. It is a figure which shows the state by which the light-emitting device was mounted in the circuit board based on Example 2. FIG. 6 is a diagram showing a state where a light emitting device is mounted on a circuit board according to a first modification of Example 2. FIG. 6 is a diagram showing a state where a light emitting device is mounted on a circuit board according to a second modification of Example 2. FIG. FIG. 10 is a diagram showing a state where a light emitting device is mounted on a circuit board according to a third modification of Example 2.

  DETAILED DESCRIPTION Exemplary embodiments for carrying out the present invention will be described in detail below with reference to the drawings. It should be noted that the dimensions, materials, shapes, relative arrangements, and the like of the components described in this embodiment are intended to limit the technical scope of the invention only to those unless otherwise specified. is not.

<Example 1>
Here, FIG. 1A is a perspective view of a schematic configuration of the package 1 in the semiconductor light emitting device (hereinafter simply referred to as “light emitting device”) 8 constituting the light emitting module 30 according to the present embodiment. These are figures which show the mounting state of wiring 20A, 20B which supplies electric power to semiconductor light emitting element 3A, 3B provided in the package 1. FIG. FIG. 1C is a diagram schematically showing the light-emitting device 8 shown in FIGS. 1A and 1B using electrical symbols. Further, FIG. 2 is a cross-sectional view of the light emitting device 8 shown in FIG. 1A when cut along a plane including the wirings 20A and 20B. In addition, the light emitting module 30 in a present Example is comprised including the light-emitting device 8 and the circuit board for mounting this.

  As shown in FIG. 1A, the light emitting device 8 includes a package 1, and the package 1 includes an annular and truncated cone-shaped reflector 10 disposed on a base 2. The reflector 10 has a function of guiding a part of output light from each divided region portion 12 described later in the emission direction of the light emitting device 8 and also functions as a main body of the package 1. In addition, the upper surface side of the truncated cone shape of the reflector 10 becomes a light emitting direction by the light emitting device 8 and forms an opening 13. On the other hand, a base 2 is arranged on the lower surface side of the truncated cone shape of the reflector 10, and although details will be described later, wiring for supplying power to each semiconductor light emitting element is laid or the like (the wiring is shown in FIG. 1A). Not shown).

And the partition 11 which divides | segments the space inside this cyclic | annular reflector 10 equally into two area | regions as shown to FIG. 1A and FIG. The partition 11 defines two divided region portions 12A and 12B in the reflector 10, and the opening portion of the divided region portion 12A occupies the right half of the opening portion 13 of the reflector 10, and the opening of the divided region portion 12B. The part occupies the left half of the opening 13 of the reflector 10.
In this specification, the opening of the divided region 12A is referred to as a divided opening 13A, and the opening of the divided region 12B is referred to as a divided opening 13B. That is, the opening 13 is divided into the divided openings 13A and 13B by the partition 11.

  Each of the divided region portions 12A and 12B is provided with four near-ultraviolet semiconductor light-emitting elements 3A and 3B each of which is a semiconductor light-emitting element and outputs near-ultraviolet light as output light. These near-ultraviolet semiconductor light-emitting elements 3A and 3B (when these near-ultraviolet semiconductor light-emitting elements are comprehensively referred to are referred to as near-ultraviolet semiconductor light-emitting elements 3), paired wirings 20A and 20B (generally wiring 20 Are connected to each other and emit light when receiving power supply. As shown in FIG. 1B, four near-ultraviolet semiconductor light-emitting elements 3A are mounted on the wiring 20A to connect the near-ultraviolet semiconductor light-emitting element 3 to the wiring 20 in each divided region. Four near-ultraviolet semiconductor light emitting elements 3B are mounted thereon. The four semiconductor light emitting elements 3 in each divided region are connected in parallel to the corresponding wiring in the forward direction. Note that reference numerals 21A and 21B in FIG. 1B denote electrodes. The electrodes 21A and 21B are formed on the lower surface of the base 2 (the surface on the side where the reflector 10 is not disposed) and are connected to the wirings 20A and 20B, respectively. In the example here, each of the divided region portions 12A and 12B is provided with four near-ultraviolet semiconductor light-emitting elements 3A and 3B, but the number of semiconductor light-emitting elements provided on both may be different. In addition, it is sufficient that at least one semiconductor light emitting element is provided in each of the divided region portions 12A and 12B.

  FIG. 1C schematically shows the mounting state of the near-ultraviolet semiconductor light emitting elements 3A and 3B. That is, power is supplied from the wiring 20A to the four near-ultraviolet semiconductor light-emitting elements 3A arranged in the divided region portion 12A via the electrode 21A, and the four near-ultraviolet semiconductors arranged in the divided region portion 12B. Power is supplied to the light emitting element 3B from the wiring 20B through the electrode 21B. At this time, the voltage applied to each near ultraviolet semiconductor light emitting element 3 is in the range of 3.3V to 3.9V, and the supply current is in the range of 40 mA to 200 mA. This power supply may be performed in consideration of the light emission intensity of the entire light emitting module 30, which will be described later.

  Here, the mounting of the near-ultraviolet semiconductor light-emitting element 3 on the base 2 will be described with reference to FIG. The base 2 is a base for holding the light emitting device 8 including the near ultraviolet semiconductor light emitting element 3, and is formed on the metal base member 2A, the insulating layer 2D formed on the metal base member 2A, and the insulating layer 2D. The pair wirings 20C and 20D are provided. The near-ultraviolet semiconductor light-emitting element 3 has a p-electrode and an n-electrode as a pair of electrodes on opposite bottom and top surfaces, and near-ultraviolet semiconductor light emission via the AuSn eutectic solder 5 on the top surface of the pair wiring 20C. The electrode on the bottom side of the element 3 is joined. The electrode on the upper surface side of the near-ultraviolet semiconductor light emitting element 3 is connected to the other pair wiring 20 </ b> D by a metal wire 6. The pair of wirings 20C and 20D form a pair of wirings 20A or 20B shown in FIG. 1B, and power is supplied to the four near-ultraviolet semiconductor light-emitting elements 3 in each divided region.

  Note that the electrical connection between the near-ultraviolet semiconductor light-emitting element 3 and the pair of wirings 20C and 20D of the base 2 is not limited to the form shown in FIG. An appropriate method can be used. For example, when a set of electrodes is provided only on one surface of the near-ultraviolet semiconductor light-emitting element 3, the near-ultraviolet semiconductor light-emitting element 3 is installed with the surface on which the electrode is provided facing upward. The pair wirings 20C and 20D and the near-ultraviolet semiconductor light emitting element 3 can be electrically connected by connecting the respective pair wirings 20C and 20D with, for example, gold wires 6. When the near-ultraviolet semiconductor light-emitting element 3 is flip-chip (face-down), the electrodes of the near-ultraviolet semiconductor light-emitting element 3 and the pair wirings 20C and 20D are electrically connected by bonding with gold bumps or solder. Can do.

Here, the near-ultraviolet semiconductor light-emitting element 3 emits light in the near-ultraviolet region (emission wavelength region of 360 nm to 430 nm) when power is supplied, and the fluorescent portions 14A and 14B (to be comprehensively described, the fluorescent portion 14) described later. It may also be referred to as “). Among these, a GaN-based semiconductor light-emitting element using a GaN-based compound semiconductor is preferable. This is because the GaN-based semiconductor light-emitting device emits light in this region, but the light output and external quantum efficiency are remarkably large, and when combined with a phosphor described later, very light emission can be obtained with very low power. Because. In the GaN-based semiconductor light emitting device, one having an AlxGayN light emitting layer, a GaN light emitting layer, or an InxGayN light emitting layer is preferable. Among the GaN-based semiconductor light-emitting elements, those having an InxGayN light-emitting layer are particularly preferable because the emission intensity is very strong, and those having a multiple quantum well structure of an InxGayN layer and a GaN layer have a very high emission intensity. It is particularly preferable because it is strong.

  In the above composition formula, the value of x + y is usually in the range of 0.8 to 1.2. In the GaN-based semiconductor light-emitting device, those in which these light-emitting layers are doped with Zn or Si and those without a dopant are preferable for adjusting the light emission characteristics.

  A GaN-based semiconductor light-emitting element has these light-emitting layer, p-layer, n-layer, electrode, and substrate as basic components, and the light-emitting layer is an n-type or p-type AlxGayN layer, GaN layer, or InxGayN layer. Those having a sandwiched heterostructure are preferable because of high emission efficiency, and those having a heterostructure having a quantum well structure are more preferable because of higher emission efficiency.

  Further, examples of the growth method of the GaN-based crystal layer for forming the GaN-based semiconductor light emitting device include the HVPE method, the MOVPE method, and the MBE method. When forming a thick film, the HVPE method is preferable, but when forming a thin film, the MOVPE method or the MBE method is preferable.

  As shown in FIG. 3, on the base 2, a plurality of or single phosphors that absorb part of the light emitted from the near-ultraviolet semiconductor light-emitting element 3 and emit light of different wavelengths and the phosphors A fluorescent part 14 containing a light-transmitting material to be sealed is provided so as to cover the near-ultraviolet semiconductor light-emitting element 3. Although the description of the reflector 10 is omitted in FIG. 3, such a form can also be a form of a semiconductor light emitting device constituted by a package. Part or all of the light emitted from the near-ultraviolet semiconductor light-emitting element 3 is absorbed as excitation light by the light-emitting substance (phosphor) in the fluorescent portion 14. More specifically, the fluorescent portion in the light emitting device 8 will be described with reference to FIG. 2. In the divided region portion 12A, the fluorescent portion 14A covers the near-ultraviolet semiconductor light emitting element 3A, and the fluorescent portion 14A is formed in the divided opening portion 13A. Exposed. In the divided region portion 12B, the fluorescent portion 14B covers the near ultraviolet semiconductor light emitting element 3B, and the fluorescent portion 14B is exposed at the divided opening 13B. Therefore, output light from each fluorescent part is emitted to the outside from each divided opening.

Next, the fluorescent part 14 will be described in detail. The light emitting device 8 according to the present embodiment is intended to output white light. In particular, the light emission color of the light emitting device 8 is black in the uv chromaticity diagram of the UCS (u, v) color system (CIE 1960). Three kinds of phosphors of a red phosphor, a green phosphor, and a blue phosphor are employed so that the deviation duv from the body radiation locus satisfies −0.02 ≦ duv ≦ 0.02. Specifically, the following can be used. The deviation duv from the blackbody radiation locus in the present invention is JIS Z8725 (light source distribution temperature and color temperature ·
Follow the definition of the remarks in Section 5.4 of Correlated Color Temperature Measurement Method).

Exemplifying a specific wavelength range of fluorescence emitted by a suitable red phosphor in the present embodiment, the main emission peak wavelength is usually 570 nm or more, preferably 580 nm or more, particularly preferably 610 nm or more, and usually 700 nm or less. , Preferably 680 nm or less, particularly preferably 660 nm or less. The half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 120 nm or less, preferably 110 nm or less, particularly preferably 100 nm or less.

The red phosphor is composed of, for example, fractured particles having a red fracture surface, and emits light in the red region (Mg, Ca, Sr, Ba) ₂ Si ₅ N ₈ : europium activated alkaline earth represented by Eu. Silicon nitride-based phosphor, which is composed of growing particles having a substantially spherical shape as a regular crystal growth shape, and emits light in the red region (Y, La, Gd, Lu) ₂ O ₂ S: represented by Eu And europium activated rare earth oxychalcogenide phosphors.

  And a phosphor containing oxynitride and / or oxysulfide containing at least one element selected from the group consisting of Ti, Zr, Hf, Nb, Ta, W, and Mo, A phosphor containing an oxynitride having an alpha sialon structure in which some or all of the elements are substituted with Ga elements can also be used. These are phosphors containing oxynitride and / or oxysulfide.

Other red phosphors include Eu-activated oxysulfide phosphors such as (La, Y) ₂ O ₂ S: Eu, Y (V, P) O ₄ : Eu, Y ₂ O ₃ : Eu, etc. Eu-activated oxide phosphors of (Ba, Sr, Ca, Mg) ₂ SiO ₄ : Eu, Mn, (Ba, Mg) ₂ SiO ₄ : Eu, Mn such as Eu, Mn
Activated silicate phosphor, Eu activated sulfide phosphor such as (Ca, Sr) S: Eu, YAlO ₃ : Eu
Eu-activated aluminate phosphor such as LiY ₉ (SiO ₄ ) ₆ O ₂ : Eu, Ca ₂ Y ₈ (SiO ₄ ) ₆ O ₂ : Eu, (Sr, Ba, Ca) ₃ SiO ₅ : Eu, Eu-activated silicate phosphors such as Sr ₂ BaSiO ₅ : Eu, (Y, Gd) ₃ Al ₅ O ₁₂ : Ce, (Tb, Gd) ₃ Al ₅ O ₁₂ : Ce-activated aluminate fluorescence such as Ce Body, (Ca, Sr, Ba) ₂ Si ₅ N ₈ : Eu, (Mg, Ca, Sr, Ba)
Eu-activated nitride phosphors such as SiN ₂ : Eu, (Mg, Ca, Sr, Ba) AlSiN ₃ : Eu, Ce-activated nitride phosphors such as (Mg, Ca, Sr, Ba) AlSiN ₃ : Ce (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, Mn-activated halophosphate phosphors such as Eu and Mn, Ba ₃ MgSi ₂ O ₈ : Eu, Mn, (Ba, Sr) , Ca, Mg) ₃ (Zn, Mg) Si ₂ O ₈ : Eu, Mn activated silicate phosphor such as Eu, Mn, 3.5Mn activated germane such as 3.5MgO · 0.5MgF ₂ · GeO ₂ : Mn Acid activated phosphor, Eu activated oxynitride phosphor such as Eu activated α sialon, (Gd, Y, Lu, La) ₂ O ₃ : Eu, Bi activated oxide phosphor such as Eu, Bi, ( Gd, Y
, Lu, La) ₂ O ₂ S: Eu, Bi-activated oxysulfide phosphors such as Eu and Bi, (Gd, Y, Lu, La) VO ₄ : Eu, Bi-activated vanadic acid such as Eu, Bi, etc. Salt phosphor, SrY ₂ S ₄ : Eu, Ce activated sulfide phosphor such as Eu, Ce, CaLa ₂ S ₄ : Ce activated sulfide phosphor such as Ce, (Ba, Sr, Ca) MgP ₂ O ₇ : Eu, Mn, (Sr, Ca, Ba, Mg, Zn) ₂ P ₂ O ₇
: Eu, Mn activated phosphor phosphor such as Eu, Mn, (Y, Lu) ₂ WO ₆ : Eu, Mo activated tungstate phosphor such as Eu, Mo, (Ba, Sr, Ca) _x Si _y N _z : Eu, Ce activated nitride phosphor such as Eu, Ce (where x, y, z are integers of 1 or more), (Ca, Sr, B)
a, Mg) ₁₀ (PO ₄ ) ₆ (F, Cl, Br, OH) ₂ : Eu, Mn-activated halophosphate phosphor such as Eu, Mn, ((Y, Lu, Gd, Tb) _{1-x sc x Ce y) 2 (Ca} , Mg) 1-r (Mg, Zn) can be used for _{2 + r Si zq GeqO 12+ δ} Ce -activated silicate phosphor such like.

Further, as red phosphors, β-diketonates, β-diketones, aromatic carboxylic acids, red organic phosphors composed of rare earth element ion complexes having an anion such as Bronsted acid as a ligand, perylene pigments ( For example, dibenzo {[f, f ']-4, 4', 7, 7'-
Tetraphenyl} diindeno [1,2,3-cd: 1 ′, 2 ′, 3′-lm] perylene)
, Anthraquinone pigment, lake pigment, azo pigment, quinacridone pigment, anthracene pigment, isoindoline pigment, isoindolinone pigment, phthalocyanine pigment, triphenylmethane basic dye, indanthrone pigment, It is also possible to use indophenol pigments, cyanine pigments, and dioxazine pigments.

  Illustrating the specific wavelength range of the fluorescence emitted by a suitable green phosphor in the present embodiment, the main emission peak wavelength is usually 500 nm or more, preferably 510 nm or more, particularly preferably 520 nm or more, and usually 580 nm or less. , Preferably 570 nm or less, particularly preferably 560 nm or less. Further, the half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 120 nm or less, preferably 90 nm or less, particularly preferably 60 nm or less.

As such a green phosphor, for example, europium activation represented by (Mg, Ca, Sr, Ba) Si ₂ O ₂ N ₂ : Eu that is composed of fractured particles having a fracture surface and emits light in the green region. An alkaline earth silicon oxynitride phosphor, composed of fractured particles having a fracture surface, emits green light (Ba, Ca, Sr, Mg) ₂ SiO ₄ : europium activated alkaline earth expressed by Eu Silicate phosphors and the like.

In addition, as the green phosphor, Sr ₄ Al ₁₄ O ₂₅ : Eu, (Ba, Sr, Ca)
Eu activated aluminate phosphors such as Al ₂ O ₄ : Eu, (Sr, Ba) Al ₂ Si ₂ O ₈ : Eu, (Ba, Mg) ₂ SiO ₄ : Eu, (Ba, Sr, Ca, Mg ) ₂ SiO ₄ : Eu, (Ba, Sr, Ca) ₂ (Mg, Zn) Si ₂ O ₇ : Eu-activated silicate phosphor such as Eu, Y ₂ SiO ₅ : Ce, Tb, etc. with Ce, Tb Activated silicate phosphor, Sr ₂ P ₂ O ₇ —Sr ₂ B ₂ O ₅ : Eu-activated borate phosphate phosphor such as Eu, Sr ₂ Si ₃ O ₈ -2SrCl ₂ : Eu-activated halo such as Eu Silicate phosphor, Zn ₂ SiO ₄ : Mn-activated silicate phosphor such as Mn, CeMgAl ₁₁ O ₁₉ : Tb, Y ₃ Al ₅ O ₁₂ :
Tb-activated aluminate phosphor such as Tb, Ca ₂ Y ₈ (SiO ₄ ) ₆ O ₂ : Tb, La ₃ Ga ₅ Si
O ₁₄ : Tb activated silicate phosphor such as Tb, (Sr, Ba, Ca) Ga ₂ S ₄ : Eu, Tb, Sm activated thiogallate phosphor such as Eu, Tb, Sm, Y ₃ (Al, Ga) ) ₅ O ₁₂ : Ce, (Y, G
a, Tb, La, Sm, Pr, Lu) ₃ (Al, Ga) ₅ O ₁₂ : Ce-activated aluminate phosphor such as Ce, Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce, Ca ₃ (Sc, Mg, Na, Li) ₂ Si ₃ O ₁₂ : Ce-activated silicate phosphor such as Ce, Ce-activated oxide phosphor such as CaSc ₂ O ₄ : Ce, SrSi ₂ O ₂ N ₂ : Eu, (Sr , Ba, Ca) Si ₂ O ₂ N ₂ : Eu, Eu-activated oxynitride phosphors such as Eu-activated β sialon, BaMgAl ₁₀ O ₁₇ : Eu, Mn-activated aluminate phosphors such as Eu and Mn SrAl ₂ O ₄ : Eu activated aluminate phosphor such as Eu, (La, Gd, Y) ₂ O ₂ S: Tb activated oxysulfide phosphor such as Tb, LaPO ₄ : Ce, Tb, etc. Ce, Tb-activated phosphate phosphors, sulfide phosphors such as ZnS: Cu, Al, ZnS: Cu, Au, Al, (Y, G
a, Lu, Sc, La) BO ₃ : Ce, Tb, Na ₂ Gd ₂ B ₂ O ₇ : Ce, Tb, (Ba, S
r) ₂ (Ca, Mg, Zn) B ₂ O ₆ : Ce, Tb activated borate phosphor such as K, Ce, Tb, Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu such as Eu, Mn, Mn-activated halosilicate phosphor, (Sr, Ca
, Ba) (Al, Ga, In) ₂ S ₄ : Eu and other Eu-activated thioaluminate phosphors and thiogallate phosphors, (Ca, Sr) ₈ (Mg, Zn) (SiO ₄ ) ₄ Cl ₂ : Eu It is also possible to use Eu, Mn activated halosilicate phosphors, etc.

  In addition, as the green phosphor, it is also possible to use a pyridine-phthalimide condensed derivative, a benzoxazinone-based, a quinazolinone-based, a coumarin-based, a quinophthalone-based, a naltalimide-based fluorescent pigment, or an organic phosphor such as a terbium complex. is there.

  Illustrating the specific wavelength range of fluorescence emitted by a suitable blue phosphor in the present embodiment, the main emission peak wavelength is usually 430 nm or more, preferably 440 nm or more, and usually 500 nm or less, preferably 480 nm or less, Especially preferably, it is 460 nm or less. Further, the half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 100 nm or less, preferably 80 nm or less, particularly preferably 70 nm or less.

As such a blue phosphor, europium-activated barium magnesium aluminate represented by BaMgAl ₁₀ O ₁₇ : Eu, which is composed of growing particles having a substantially hexagonal shape as a regular crystal growth shape and emits light in a blue region. System phosphor, composed of growing particles having a substantially spherical shape as a regular crystal growth shape, and emits light in a blue region with a europium represented by (Ca, Sr, Ba) ₅ (PO ₄ ) ₃ Cl: Eu An active calcium halophosphate phosphor is composed of growing particles having a substantially cubic shape as a regular crystal growth shape, and emits light in a blue region (Ca, Sr, Ba) ₂ B ₅ O ₉ Cl: Eu. Europium-activated alkaline earth chloroborate phosphor, composed of fractured particles having a fracture surface, and emitting light in the blue-green region (Sr, Ca, Ba) A l ₂ O ₄ : Eu or (Sr, Ca, Ba) ₄ Al ₁₄ O ₂₅ : Eu
Europium-activated alkaline earth aluminate phosphors represented by

In addition, as the blue phosphor, Sn-activated phosphate phosphors such as Sr ₂ P ₂ O ₇ : Sn, Sr ₄ Al ₁₄ O ₂₅ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, BaAl ₈ O ₁₃ : Eu-activated aluminate phosphors such as Eu, Ce-activated thiogallate phosphors such as SrGa ₂ S ₄ : Ce, CaGa ₂ S ₄ : Ce, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, Tb, Sm activated aluminate phosphor such as Eu, Tb, Sm, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, Mn activated aluminate phosphor such as Eu, Mn (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, (Ba, Sr, Ca) ₅ (PO ₄ ) ₃ (Cl, F, Br, OH): Eu, Mn, Sb, etc. of Eu, Tb, Sm-activated halophosphate _{phosphor, BaAl 2 Si 2 O 8:} Eu, (Sr, B ) ₃ MgSi ₂ O _8: Eu-activated silicate phosphors such as _{Eu, Sr 2 P 2 O 7} : Eu , etc. E of
u-activated phosphate phosphor, sulfide phosphor such as ZnS: Ag, ZnS: Ag, Al, Y ₂ Si
O ₅ : Ce-activated silicate phosphor such as Ce, tungstate phosphor such as CaWO ₄ , (Ba,
_{Sr, Ca) BPO 5: Eu} , Mn, (Sr, Ca) 10 (PO 4) 6 · nB 2 O 3: Eu, 2SrO · 0.84P 2 O 5 · 0.16B 2 O 3: Eu such as Eu , Mn-activated borate phosphate phosphors, Eu-activated halosilicate phosphors such as Sr ₂ Si ₃ O ₈ .2SrCl ₂ : Eu, and the like can also be used.

  In addition, as the blue phosphor, for example, naphthalic acid imide-based, benzoxazole-based, styryl-based, coumarin-based, pyrazoline-based, triazole-based compound fluorescent dyes, thulium complexes and other organic phosphors can be used. .

  Note that the red, green, and blue phosphors described above may be used in appropriate combination according to a desired emission spectrum, color temperature, chromaticity coordinates, color rendering properties, luminous efficiency, and the like.

  In the light emitting device 8, the near-ultraviolet semiconductor light-emitting element 3 and the fluorescent part 14 are usually arranged so that the phosphor is excited by the light emitted from the near-ultraviolet semiconductor light-emitting element 3 to emit light, and the emitted light is extracted outside. The When having such a structure, the near-ultraviolet semiconductor light-emitting element 3 and the phosphor 14 are usually sealed and protected with a light-transmitting material (sealing material). Specifically, the sealing material is included in the fluorescent portion 14 so that the phosphor is dispersed to form a light emitting portion, or the near ultraviolet semiconductor light emitting element 3, the phosphor and the base 2 are bonded. Adopted.

And as a translucent material used, although a thermoplastic resin, a thermosetting resin, a photocurable resin etc. are normally mentioned, the near-ultraviolet semiconductor light-emitting device 3 has the wavelength of the output light of 360 nm-430 nm. Since it is in the near-ultraviolet region, a resin having sufficient transparency and durability against the output light is preferable as the sealing material. Therefore, specific examples of the sealing material include (meth) acrylic resins such as poly (meth) methyl acrylate; styrene resins such as polystyrene and styrene-acrylonitrile copolymers; polycarbonate resins; polyester resins; phenoxy resins; Resin; Polyvinyl alcohol; Cellulose resins such as ethyl cellulose, cellulose acetate, cellulose acetate butyrate; Epoxy resin; Phenol resin; Silicone resin Further, an inorganic material such as a siloxane bond formed by solidifying a solution obtained by hydrolytic polymerization of a solution containing an inorganic material such as a metal alkoxide, ceramic precursor polymer or metal alkoxide by a sol-gel method, or a combination thereof. The inorganic material and glass which have can also be used.

  Among these, from the viewpoints of heat resistance, ultraviolet resistance (UV) resistance, etc., a solution containing a silicone resin, a metal alkoxide, a ceramic precursor polymer or a metal alkoxide, which is a silicon-containing compound, is hydrolytically polymerized by a sol-gel method. An inorganic material obtained by solidifying the solution or a combination thereof, for example, an inorganic material having a siloxane bond is preferable. In particular, a silicone material or a silicone resin (hereinafter sometimes referred to as “the silicone material of the present invention”) having one or more of the following features (1) to (3), preferably all, is preferred.

(1) It has at least one peak of the following (i) and / or (ii) in a solid Si-nuclear magnetic resonance (NMR) spectrum.
(I) A peak whose peak top is in the region of chemical shift −40 ppm or more and 0 ppm or less, and whose peak half-value width is 0.3 ppm or more and 3.0 ppm or less.
(Ii) A peak whose peak top is in the region where the chemical shift is −80 ppm or more and less than −40 ppm, and the half width of the peak is 0.3 ppm or more and 5.0 ppm or less.
(2) The silicon content is 20% by weight or more.
(3) The silanol content is 0.01% by weight or more and 10% by weight or less.

  Here, as for the silicone-based material as the sealing agent, as described above, those having a silicon content of 20% by weight or more are preferable. The basic skeleton of conventional silicone-based materials is an organic resin such as an epoxy resin having carbon-carbon and carbon-oxygen bonds as the basic skeleton, whereas the basic skeleton of this silicone-based material is glass (silicate glass). ) Etc., and the same inorganic siloxane bond. This silicone-based material having a siloxane bond has (I) a large bond energy and is difficult to be thermally decomposed or photodegraded, so that it has good light resistance, (II) is slightly electrically polarized, (III) chain The degree of freedom of the structure is large and a flexible structure is possible, it can freely rotate around the center of the siloxane chain, (IV) it has a high degree of oxidation and is not oxidized any more, (V) it has a high electrical insulation, etc. It has excellent characteristics.

  Because of these characteristics, a silicone-based material formed with a skeleton in which siloxane bonds are three-dimensionally bonded with a high degree of crosslinking is close to an inorganic material such as glass or rock, and becomes a protective film rich in heat resistance and light resistance. Can understand. In particular, a silicone-based material having a methyl group as a substituent has no absorption in the ultraviolet region, so that photolysis hardly occurs and has excellent light resistance.

As described above, the silicon content of the silicone material of the present case is 20% by weight or more, preferably 25% by weight or more, and more preferably 30% by weight or more. On the other hand, the upper limit is usually in the range of 47% by weight or less because the silicon content of the glass composed solely of SiO ₂ is 47% by weight.

  The light-emitting device 8 configured in this way is divided into two divided region portions 12A and 12B divided by the partition 11, and fluorescent portions excited by near-ultraviolet light using four near-ultraviolet semiconductor light-emitting elements 3 as light sources, respectively. 14, and two divided region portions 12 </ b> A and 12 </ b> B are integrally provided in the reflector 10 by arranging the output light output ports, that is, the divided opening portions 13 </ b> A and 13 </ b> B. And the white light which is the output light from each fluorescence part 14A, 14B is radiate | emitted outside from the division | segmentation opening part 13A, 13B, respectively. Here, since each white light emitted from this divided opening is obtained through the fluorescent part 14 including the phosphor, the output light from the near-ultraviolet semiconductor light emitting elements 3A and 3B is sufficiently scattered, and the light distribution Is emitted as Lambertian. As a result, primary light from the three types of phosphors can be synthesized to be white, and uniform white can be obtained. Therefore, uniform white light and illuminance are obtained in the synthesized light emitted from the light emitting device 8. Will be.

Here, the spectrum of white light (hereinafter referred to as “white light A”) output from the divided region portion 12A and white light (hereinafter referred to as “white light B”) output from the divided region portion 12B. Are appropriately selected from the phosphors included in the fluorescent part 14A and the phosphors included in the fluorescent part 14B. If the chromaticity points on the xy chromaticity diagram (CIE1931) corresponding to the white light A and B are represented by W _L and W _H , the correlation between the chromaticity points W _L as shown in FIGS. color temperature 2600K, correlated color temperature of the chromaticity point W _H has a 9000K. Further, the chromaticity point W _L has a deviation duv from a blackbody radiation locus BBL is +0.005, the chromaticity point W _H is the black body radiation locus BBL
The deviation duv from is assumed to be +0.01. FIG. 5 is an enlarged view of the main part of FIG. 4, and the range of deviation from black body radiation −0.02 ≦ duv ≦ 0.02 shown in FIG. 4 is the UCS color system (CIE 1960). To xy chromaticity diagram (CIE1931).

In the above case, the correlated color temperatures of the white light A from the divided area portion 12A and the white light B from the divided area portion 12B are set to be different from each other, and the chromaticity points corresponding to the white lights A and B are black. By keeping the deviation duv from the body radiation locus BBL within −0.02 ≦ duv ≦ 0.02, it can be said that the output light of the light emitting device 8 is substantially along the black body radiation locus BBL, and By controlling the driving conditions such as the light emission time, driving current value, and electric energy of the near ultraviolet semiconductor light emitting elements 3A and 3B provided in the divided region part, the energy ratio can be freely changed for each of the white light A and B. the chromaticity point of which is the final output light of the light emitting device 8 synthesized light, the correlated color temperature corresponding to any chromaticity point on the straight line connecting the above chromaticity point W _L and the chromaticity point W _H Can be adjusted.
That is, in the light emitting device 8, the power supplied to the near ultraviolet semiconductor light emitting elements 3 provided in the corresponding divided region portions 12A and 12B is controlled via the wirings 20A and 20B, respectively. The correlated color temperature of the combined light, which is the output light of the light, can be adjusted to an arbitrary value between 2600K and 9000K, and the chromaticity point of the combined light is substantially along the black body radiation locus BBL. It is possible to provide white light that is almost natural to the human eye and to change the color temperature freely from 2600K to 9000K, that is, toning the output light in the light emitting device 8.

  Further, in order to output white light as synthesized light in the light emitting device 8, in the above-described embodiments, the near ultraviolet semiconductor light emitting element 3 and the red, green, and blue phosphors are combined, and these are divided into the divided region portions 12. Arranged as shown in FIG. Of course, in order to output white light, other combinations of semiconductor light emitting elements and phosphors may be adopted and arranged in each divided region portion 12. Therefore, if the combination of the near-ultraviolet semiconductor light-emitting element 3 and the red, green, and blue phosphors described above is a combination A, the combination of the blue semiconductor light-emitting element, the red, and the green phosphors is obtained as other combinations that obtain white light. The combination (combination B) and the combination of the blue semiconductor light emitting element and the yellow phosphor (combination C) can also be arranged in the divided region portion 12 shown in FIG. Since the technology for outputting white light by the combination B and C is known, detailed description thereof will be omitted.

  Here, in the combinations A, B, and C, FIG. 6 shows the correlation between the color temperature of white light obtained by adjusting the phosphor concentration and the light emission efficiency. The horizontal axis in FIG. 6 represents the color temperature (K), and the vertical axis represents the luminous efficiency (lm / W). The line LA in the figure corresponds to the combination A, the line LB corresponds to the combination B, and the line LC corresponds to the combination C. As can be seen from FIG. 6, among the above three combinations, the slope of the line LA corresponding to the combination A is the smallest, almost horizontal linear state, and the slope of the line LC corresponding to the combination C is the largest. It has become. The greater the slope of each straight line, the greater the variation in the light emission efficiency when trying to change the color temperature.

Therefore, an increase in the slope of the straight line means that the luminance of the semiconductor light emitting element greatly fluctuates if the power supplied to the semiconductor light emitting element remains constant when the color temperature is changed. In other words, when the inclination of the straight line is relatively large, it is necessary to surely control the power supplied to the semiconductor light emitting element in order to stabilize the luminance. As a result, the overall drive control of the light emitting device 8 is complicated. Is likely to be. Therefore, in order to construct the light emitting device 8 having a stable luminance, a combination with the smallest inclination of the straight line shown in FIG. 6 as much as possible, that is, the combination A of the three-color phosphors corresponding to the near ultraviolet semiconductor light emitting element 3 is used. It is preferable to adopt. However, this does not exclude applying combinations B and C or other combinations of semiconductor light emitting elements and phosphors to the light emitting device 8 according to the present invention.

  Note that whitening in the combinations B and C uses the light of the blue semiconductor light emitting element, which is a phosphor excitation source, as blue light for color mixing, so red, green, or It is necessary to increase the amount of yellow phosphor and reduce the proportion of blue light. Also, since blue light is more efficient than phosphor converted light, the efficiency decreases as the proportion of blue light decreases. On the other hand, when a near-ultraviolet semiconductor light-emitting element is used as in combination A, near-ultraviolet light hardly contributes to whitening and most is used for excitation of the phosphor, and whitening is exclusively converted to blue, green, and red phosphors. Become light. Therefore, even if the composition ratio of the phosphor is changed in order to change the color temperature, the luminous efficiency is not greatly affected.

  As described above, according to the light emitting device 8 according to the present embodiment, white light having a color temperature between 2600 K and 9000 K can be easily output, and the structure shown in FIG. By adopting, it is possible to sufficiently suppress the possibility that the combined light of the output light from each divided region portion 12 is separated on the irradiation surface.

  Here, a light emitting module that is configured as described above and includes a light emitting device 8 that can easily output white light having a color temperature between two color temperatures, and a circuit board 31 on which the light emitting device 8 is mounted. The configuration of 30 will be described with reference to FIGS. 7A and 7B. 7A is a perspective view showing a specific configuration of the light emitting module 30, and FIG. 7B is a diagram schematically showing an arrangement state of five light emitting devices 8 on the light emitting module shown in FIG. 7A. In FIG. 7A, the power supply system to each light emitting device 8 is not shown. Further, in FIG. 7B, in order to distinguish each of the divided region portions 12A and 12B, a pattern is given to 12A with a broken line for convenience. Specifically, the light emitting module 30 is similarly annularly arranged on the annular circuit board 31. At this time, as shown in FIG. 7B, the five light emitting devices 8 are equiangularly arranged on the same circumference with the center O of the circuit board 31 as the center point. Accordingly, the angle θ between the adjacent light emitting devices 8 (hereinafter referred to as “predetermined arrangement angle θ”) is an angle obtained by dividing 360 ° of one rotation of the center O by 5 which is the number of the light emitting devices 8, that is, 72 °. It becomes.

  Here, as shown in FIG. 7B, the partition 11 in each light-emitting device 8 and the annular radius where the light-emitting device 8 is arranged are orthogonal to each other, and the divided region portion 12A is located inside the annular region. In the light emitting module 30, five light emitting devices 8 are arranged so that the portion 12B is positioned outside the ring. As a result, in the light emitting module 30, the deviation of the direction of the partition 11 from the adjacent light emitting device 8 is rotated by the predetermined arrangement angle θ in one rotation direction within the opening surface of the opening 13 of the light emitting device 8. Thus, the direction of the partition 11 representing the relative positional relationship between the divided region portion 12A and the divided region portion 12B is different for each light emitting device 8.

  By arranging the five light emitting devices 8 in such a manner that the direction of the partition 11 is shifted by a predetermined arrangement angle θ, light emission from the divided region portion 12A and the divided region portion 12B of each light emitting device 8 is performed. Since it becomes easy to synthesize | combine suppressing a nonuniformity, it becomes possible to avoid the isolation | separation in the irradiation surface of the light irradiated as light emission from the light emitting module 30. FIG. In particular, even when a lens element such as a convex lens is provided on the opening 13 of the light emitting device 8, it is possible to avoid separation of light emission.

  FIG. 8 is a diagram schematically showing an electrical connection state between the light emitting devices 8 of the light emitting module 30. In the light emitting module 30, the wirings 20 </ b> A of the five divided region portions 12 </ b> A included in each light emitting device 8 are connected in series with each other. Similarly, the wirings 20B of the five divided region portions 12B are connected in series with each other. As described above, the light emission control of the light emitting module 30 can be easily performed by connecting the respective divided region portions 12A and 12B of each light emitting device 8 in series.

  In the present embodiment, each of the electrodes 21A corresponding to each divided region portion 12A is disposed so as to be in contact with the power supply conductor layers 32A and 32B (sometimes collectively referred to as the power supply conductor layer 32). ing. Although details of the power supply conductor layers 32A and 32B will be described later, these are main components of the circuit board 31. The power supply conductor layers 32A and 32B supply power to the near-ultraviolet semiconductor light-emitting elements 3 with the divided region portions 12A and 12B as separate systems, and correspond to the power supply portions in the present invention. . The system here means a control system of power supplied to each near ultraviolet semiconductor light emitting element 3 included in the divided region section 12, and in this embodiment, there are two systems. That is, the power for the divided region portion 12A is supplied by the power supply conductor layer 32A, and the control power for the divided region portion 12B is supplied by the power supply conductor layer 32B. The power supply to 3 is controlled independently of each other.

  Here, the power supply conductor layers 32A and 32B of different systems are insulated from each other by an insulating member 33 (illustrated by hatching in the figure). Reference numerals 34A and 34B in the figure are positive terminal portions, and reference numerals 35A and 35B are negative terminal portions. In FIG. 8, the power supply conductor layer 32 is represented as a rectangle, but in this figure, it is represented only as a rectangle for convenience. Also, illustration of the ground line of each light emitting device 8 is omitted.

  FIG. 9 shows an example of a current supplied to each light emitting device 8 for light emission control of the light emitting module 30. In particular, FIG. 9A shows each light emitting device via the power supply conductor layer 32A. FIG. 9B shows the transition of the current supplied to the near-ultraviolet semiconductor light emitting element 3A arranged in the eight divided region portions 12A. FIG. 9B shows the division of each light emitting device 8 through the power supply conductor layer 32B. The transition of the electric current supplied to the near-ultraviolet semiconductor light-emitting device 3B arrange | positioned in the area | region part 12B is shown. In the present embodiment, a rectangular current is supplied to each near-ultraviolet semiconductor light-emitting element 3, and the amount of current supplied to the near-ultraviolet semiconductor light-emitting element 3A and the near-ultraviolet semiconductor light-emitting element 3B are supplied. The total amount of current is controlled to be constant. In the state shown in FIG. 9, the amount of current supplied to the near ultraviolet semiconductor light emitting element 3A side is 25% of the sum, and the amount of current supplied to the near ultraviolet semiconductor light emitting element 3B side is 75% of the sum. As a result, the ratio between the light emission intensity from the divided region portion 12A of each light emitting device 8 and the light emission intensity from the divided region portion 12B of each light emitting device 8 is 1: 3.

  Thus, the amount of current supplied to each semiconductor light emitting element 3 side is made constant while keeping the sum of the amount of current supplied to the near ultraviolet semiconductor light emitting element 3A side and the amount of current supplied to the near ultraviolet semiconductor light emitting element 3B side constant. By adjusting the ratio, it is possible to change the ratio of the emission intensity from the divided region portion 12A and the divided region portion 12B while keeping the emission intensity as the light emitting module 30 constant. As a result, as shown in FIGS. 4 and 5, the output color of the light emitting module 30 can be adjusted to an arbitrary value between 2600K and 9000K while maintaining the emission intensity constant. Further, as described above, since the chromaticity point of the combined light is substantially along the black body radiation locus BBL, it provides white light that is very close to human vision, and extends from 2600K to 9000K. The color temperature can be freely changed.

In addition, about the change of the ratio of the emitted light intensity from 12 A of division area parts, and the division area part 12B, you may change in steps and may change continuously. In the former case, the output light of the light emitting module has a plurality of output lights having different correlated color temperatures, and the light emitting module 30 is used by the user selecting an output of one of the correlated color temperatures. In the latter case, the light emitting module 30 is used by selecting an arbitrary ratio so that the user has a desired correlated color temperature. However, drive control other than those described above can also be used for drive control of the near-ultraviolet semiconductor light-emitting elements 3A and 3B. For example, the input current may be controlled by supplying power independently for each near-ultraviolet semiconductor element without making the sum of the currents supplied to the near-ultraviolet semiconductor light emitting elements 3A and 3B constant.

  As in the aspect described with reference to FIG. 9, the light emitting module 30 can change the ratio of the emission intensity of the output light from the divided region portion 12 </ b> A and the divided region portion 12 </ b> B while keeping the emission intensity constant. As a result, the color temperature of the output light output as the light emitting module 30 can be freely and easily varied, but the ratio of the emission intensity in the divided region portion 12A and the divided region portion 12B is made different. Local heat concentration is likely to occur in each light emitting device 8. Then, problems such as a decrease in light emission efficiency due to the temperature increase of the near-ultraviolet semiconductor light-emitting element 3 and thermal deterioration of the near-ultraviolet semiconductor light-emitting element 3 are more obvious than a semiconductor light-emitting device that cannot perform color matching. . Therefore, in the light emitting module 30 according to the present embodiment, the configuration of the circuit board 31 for mounting the light emitting device 8 is particularly improved in order to release the heat generated in each light emitting device 8 to the outside more efficiently and improve the heat dissipation performance. Devised.

  FIG. 10 is a diagram schematically showing the upper surface of the circuit board 31 of the light emitting module 30. FIG. 11 is a diagram schematically showing a cross section including the AA cutting line of FIG. 10. FIG. 12 is a diagram illustrating a state where each light emitting device 8 is mounted on the circuit board 31. FIG. 13 is a view showing the illumination device DL including the light emitting module 30, the heat radiating housing member 50, and the lens 60.

  The circuit board 31 in the light emitting module 30 is a board on which the light emitting device 8 is mounted (mounted), and in this embodiment, five light emitting devices are mounted. The circuit board 31 includes a base material portion 36 formed in an annular shape (donut shape) that serves as a base for mounting each light emitting device 8. This base material part 36 is formed using the heat conductive material excellent in heat conductivity, and the center O side is hollow. In the present embodiment, the base material portion 36 is made of aluminum, but it is of course not limited thereto. An insulating layer 36 </ b> A is formed on the surface of the base material portion 36. For the insulating layer 36A, for example, a resin represented by PEEK (polyether ether ketone) can be used.

  On the insulating layer 36 </ b> A, a power supply conductor layer 32 is formed so as to cover almost the entire surface of the base material portion 36. For example, a copper foil having excellent electrical conductivity is used for the power supply conductor layer 32 in the present embodiment, but other electrical conductive materials can also be used. As described with reference to FIG. 8, in this embodiment, the number of power control systems to be supplied to the near ultraviolet semiconductor light emitting element 3 included in each divided region portion 12 is two. Hereinafter, 32A corresponding to the power control system for the near ultraviolet semiconductor light emitting element 3A in the divided region portion 12A is referred to as a “first system power supply conductor layer”, and power control for the near ultraviolet semiconductor light emitting element 3B in the divided region portion 12B is performed. 32B corresponding to the system is defined as a “second system power supply conductor layer”.

  As shown in FIG. 10, the first system power supply conductor layer 32A and the second system power supply conductor layer 32B are roughly formed in an annular insulating member (hereinafter referred to as “annular insulating member”) 33A. Are insulated from each other. In other words, the first system power supply conductor layer 32 </ b> A and the second system power supply conductor layer 32 </ b> B are partitioned in a plane in the in-plane direction of the base portion 36 by the annular insulating member 33 </ b> A. In this figure, a first system power supply conductor layer 32A (lattice hatching) is disposed on the inner side with the annular insulating member 33A as a boundary, and a second system power supply conductor layer 32B (lateral hatching) is disposed on the outer side. .

  Six insulating members (hereinafter referred to as “radial insulating members”) 33 </ b> B to 33 </ b> G are provided radially in the radial direction of the circuit board 31 (base material portion 36). The radial insulation members 33B to 33G divide (divide) the first system power supply conductor layer 32A into six conductor regions A1 to A6, and the second system power supply conductor layer 32B has six conductor regions B1. -B6 is divided (sectioned).

  As shown in FIG. 11, an electrical insulation protective coating layer 37 (a solder resist as an example) is further laminated on the power supply conductor layer 32 formed on the base member 36. The power supply conductor layer 32 is covered with this electrically insulating protective coating layer 37 except for a specific portion. In the first system power supply conductor layer 32A, a portion where the + terminal portion 34A and the −terminal portion 35A are formed and a portion which is in contact with the electrode 21A formed on the lower surface of the base 2 in each light emitting device 8 are exposed. (Exposed part is shown in white). Therefore, in the region represented by lattice hatching in FIG. 10, the electrically insulating protective coating layer 37 is laminated on the first system power supply conductor layer 32 </ b> A.

  On the other hand, in the second system power supply conductor layer 32A, a portion where the + terminal portion 34B and the − terminal portion 35B are formed and a portion which is in contact with the electrode 21B formed on the lower surface of the base 2 in each light emitting device 8 are exposed. (Exposed part is shown in white). Therefore, in the region represented by horizontal hatching in FIG. 10, the electrical insulation protective coating layer 37 is laminated on the second system power supply conductor layer 32 </ b> B. In addition, the power supply conductor layer 32 can be exposed at a portion where a power control electronic component (not shown) such as a Zener diode provided for preventing backflow of electricity is disposed. However, such an electronic component for power control is not necessarily installed on the circuit board 31 and may be installed outside the circuit board 31. Further, the power control electronic component may be arranged inside the light emitting device 8.

  As described above, the light emitting devices 8 mounted on the circuit board 31 are arranged in an annular shape and equiangularly on the same circumference with the center O as a center point (see FIG. 7B). And the predetermined | prescribed arrangement | positioning angle | corner (theta) between the adjacent light-emitting devices 8 is 72 degrees. In FIG. 12, the five light-emitting devices 8 are defined as a first light-emitting device 8A to a fifth light-emitting device 8E in order from those close to the + terminal portions 34A and 34B.

  As described above with reference to FIGS. 10 to 12, the power supply conductor layer 32 partitioned by the insulating member 33 connects the divided region portions 12 corresponding to each other in series in each light emitting device 8. Function. Specifically, in the power control system corresponding to the divided region portion 12A side of each light-emitting device 8, the power input from the + terminal portion 34A is divided into the divided region portion A1 → 8A divided region portion 12A → A2 → 8B. 12A → A3 → 8C divided region portion 12A → A4 → 8D divided region portion 12A → A5 → 8E divided region portion 12A → A6 and then to the −terminal portion 35A. Further, in the power control system corresponding to the divided region portion 12B side of each light emitting device 8, the power input from the + terminal portion 34B is divided into the divided region portion 12B of B1 → 8A → the divided region portion 12B → B3 of B2 → 8B. → 8C divided region portion 12B → B4 → 8D divided region portion 12B → B5 → 8E divided region portion 12B → B6, and reaches −terminal portion 35B. Thereby, in each light-emitting device 8, the light emission control which became independent for every electric power control system | strain is implement | achieved suitably.

  The heat generated in each light emitting device 8 due to the light emission control is transmitted to the power supply conductor layer 32 via the electrodes 21A and 21B of each light emitting device 8. Here, the power supply conductor layer 32 is formed in a planar shape over substantially the entire surface of the base material portion 36 by a heat conductive material. Therefore, the heat taken by the power supply conductor layer 32 from each light emitting device 8 can be released while spreading in the in-plane direction of the circuit board 31 (base material portion 36). That is, the heat concentrated locally in the light emitting device 8 can be efficiently taken away from the light emitting device 8 while being suitably dispersed in the in-plane direction of the base material portion 36.

  Here, the heat radiation performance of the light emitting device 8 can be increased as the area ratio of the portion where the power supply conductor layer 32 is formed with respect to the total surface area of the base material portion 36 (hereinafter referred to as “conductor layer occupation area ratio”) is higher. it can. This is because if the area of the base material portion 36 is equal, the higher the conductor layer occupation area ratio, the more heat can be effectively removed from the light emitting device 8. Therefore, in this embodiment, the conductor layer occupation area ratio is set so that the light emission efficiency of the light emitting device 8 satisfies the specified level, and the value is preferably 70% or more, more preferably 80% or more. good.

  Further, in the light emitting module 30 according to the present embodiment, the light emitting devices 8 are arranged on the circuit board 31 in a ring shape and equiangularly on the same circumference with the center O as the center point, and between the adjacent light emitting devices 8. The displacement of the direction of the partition 11 is in a state of being rotated by a predetermined arrangement angle θ in one rotation direction within the opening surface of the opening 13. In this embodiment, as shown in FIG. 12, the power supply conductor layer 32 is concentrically centered around the center O (predetermined reference point) for each power control system as shown in FIG. It was made to partition using the insulating member 33 so that it may arrange | position in a shape.

  As a result, the first system power supply conductor layer 32A and the second system power supply conductor layer 32B are distributed in an orderly manner without being scattered in the plane of the circuit board 31 (base material portion 36). According to this, the amount of the insulating member 33 necessary for partitioning the power supply conductor layer 32 for each power control system can be further reduced. Therefore, the above-described conductor layer occupation area ratio can be increased as much as possible, and thus it is possible to contribute to the improvement of the heat dissipation performance of the light emitting device 8. Moreover, since the usage-amount of the insulating member 33 can be reduced as mentioned above, it is beneficial also from a viewpoint of manufacturing cost reduction. The first system power supply conductor layer 32A and the second system power supply conductor layer 32B may be arranged concentrically with a reference point other than the center point O as the center.

  As shown in the figure, the terminal portions 34A, 34B, 35A, and 35B on the circuit board 31 (referred to as the terminal portions 34 when these terminal portions are comprehensively referred to) are arranged adjacent to each other. ing. According to this, each wiring connected with an external power supply can be put together. Therefore, this embodiment is one of the preferable forms from the viewpoint of improving the degree of freedom related to the overall design of the illumination device DL.

  Further, as shown in FIGS. 11 and 13, a heat radiating housing member 50 for radiating heat taken from the light emitting device 8 to the atmosphere is attached to the circuit board 31 according to the present embodiment. Yes. The heat radiating housing member 50 is a housing for holding the light emitting module 30 and is made of a material having excellent thermal conductivity like the base material portion 36 and is conducted from the base material portion 36 side. It also functions as a heat dissipation promoting member for dissipating the coming heat into the atmosphere. The heat radiating housing member 50 includes a heat radiating fin portion 51 that mainly serves as a heat radiating promotion member, and a housing portion 52 that serves as a housing. The housing part 52 is formed such that the cylindrical side wall part 52B rises from the middle bottom part 52A having a circular shape toward the side opposite to the heat radiation fin part 51. The inner diameter of the cylindrical side wall part 52B is substantially equal to the outer diameter of the circuit board 31 (base material part 36), and when the circuit board 31 is mounted on the heat dissipation housing member 50, the cylindrical side wall part 52B and the outer periphery of the circuit board 31 are separated. A slight clearance is formed between them.

In the present embodiment, the heat radiating housing member 50 is attached to the surface of the base portion 36 on which the light emitting device 8 is not mounted (hereinafter referred to as “non-mounting surface”) 36 </ b> B. Specifically, a thermal interface material (TIM) 38 is interposed between the non-mounting surface 36 </ b> B in the base material portion 36 and the interface between the middle bottom portion 52 </ b> A in the heat radiating housing member 50. Usually, the thermal expansion coefficients of the heat radiating housing member 50 and the base material portion 36 are different. Therefore, by interposing a material having deformability (following ability) such as TIM 38 at the interface between the base material portion 36 and the heat radiating housing member 50, damage to both members due to the difference in thermal expansion coefficient is prevented. I have to. Further, by interposing the TIM 38 in this manner, even if the surface accuracy of either the heat radiating housing member 50 or the base material portion 36 is low, smooth heat transfer from the base material portion 36 to the heat radiating housing member 50 is achieved. It can be performed. The TIM 38 may be disposed so as to fill a slight clearance formed between the cylindrical side wall 52B and the outer periphery of the circuit board 31 (base material portion 36). Thereby, the heat transfer efficiency between the light emitting module 30 and the heat dissipation housing member 50 can be further enhanced.

  In this way, heat generated by the light emitting device 8 is transmitted to the heat radiating housing member 50 via the power supply conductor layer 32 and the base material portion 36 in the circuit board 31 of the light emitting module 30, and the heat is radiated by the fin portion. The heat radiation of the light emitting module (light emitting device 8) is promoted by being released into the atmosphere from 51. According to the circuit board 31, the light emitting module 30, and the lighting device DL in the present embodiment, it is possible to suitably improve the heat dissipation performance of the heat generated in the toned light emitting device 8. Therefore, it is possible to suppress a decrease in light emission efficiency and a thermal deterioration due to a local temperature increase in the light emitting device 8.

  In addition, although the illuminating device DL in a present Example is not limited to a specific kind, it can be applied suitably as a downlight (for example, LED shelf downlight etc.). For example, the heat radiation performance of the light emitting device 8 can be improved without losing the aesthetic appearance by embedding and hiding the heat radiation fins 51 of the heat radiation housing member 50 inside the shelf or ceiling (the housing part 52 is also embedded). Of course, it doesn't matter.) Note that each of the light emitting module 30, the heat radiating housing member 50, and the lens 60 can be fixed using various known methods. For example, as shown in FIG. 13, the connection hole formed in the center of the middle bottom portion 52 </ b> A in the heat radiating housing member 50 and the connection hole formed in the center of the circuit board 31 are not shown. You may fix via a jig | tool (for example, screw etc.). In addition, regarding the lens 60 and the heat radiating housing member 50, screw grooves are formed on the outer peripheral surface of the lens 60 frame and the inner peripheral surface of the cylindrical side wall portion 52B, and these are screwed together so that the lens 60 is dissipated. You may attach to the member 50. FIG. In addition, the function and specification of the lens 60 are not particularly limited, and for example, a condensing lens, a diffusing lens, or the like can be employed.

<Modification>
Next, a first modification of the light emitting module 30 in the present embodiment will be described with reference to FIG. FIG. 14 illustrates an example in which the light emitting device 8 in which the interior of the reflector 10 is divided into three divided region portions 12A to 12C is mounted on the circuit board 31. The combination of the semiconductor light emitting element and the phosphor is appropriately adjusted so that each output light from the divided regions 12A to 12C becomes, for example, red, green, and blue, and white combined light is output from the light emitting device 8. It has come to be.

  In the example shown in FIG. 14, three light emitting devices 8 are installed on the circuit board 31. The mounting method of each light emitting device 8 on the circuit board 31 is the same as that described above. That is, the three light emitting devices 8 are equiangularly arranged on the same circumference with the center O of the circuit board 31 as the center point. The predetermined arrangement angle θ between the adjacent light emitting devices 8 is an angle obtained by dividing 360 ° by 3 which is the number of the light emitting devices 8, that is, 120 °. Here, in each light emitting device 8, the notations “R”, “G”, and “B” in the drawing correspond to each of the divided region portions 12 </ b> A to 12 </ b> C. In each light emitting device 8, the divided region portions 12 </ b> A to 12 </ b> C are sequentially arranged from the center O side of the circuit board 31 toward the radially outer side.

Also in this modification, the power supply conductor layer 32 is partitioned in a plane for each power control system corresponding to each of the divided region portions 12A to 12C. That is, since the number of systems here is 3, the power supply conductor layer 32 is partitioned by the two annular insulating members 33H and 33I. Thus, the first system power supply conductor layer 32A to the third system power supply conductor layer 32C are arranged concentrically with respect to the center point O in the plane of the circuit board 31 (base material portion 36).

  Further, four radial insulating members 33J to 33M are arranged radially in the radial direction of the circuit board 31 (base material portion 36). The first system power supply conductor layer 32A is divided into four conductor regions A1 to A4 by the radial insulating members 33J to 33M, and the second system power supply conductor layer 32B is divided into four conductor regions B1 to B4. The third system power supply conductor layer 32C is partitioned into four conductor regions C1 to C4. In addition, the code | symbol 34C contained in the conductor area | region C1 in a figure is a + terminal part for inputting the electric power supplied to the semiconductor light-emitting element contained in the division | segmentation area | region part 12C of each light-emitting device 8 from the outside. Further, the reference numeral 35 </ b> C included in the conductor region C <b> 4 represents a −terminal portion corresponding to the divided region portion 12 </ b> C of each light emitting device 8.

  As described above, in FIG. 14, the embodiment related to the modification pattern in which the number of divisions inside the reflector 10 in the light emitting device 8, that is, the number of power control systems to be supplied to the semiconductor light emitting elements is different. Even in such a deformation pattern, heat generation in each light-emitting device 8, in particular, a divided region, via the power supply conductor layer 32 formed in a planar shape so as to cover the base material portion 36 over the in-plane direction of the circuit board 31. The heat generated by local concentration for each portion 12 can be efficiently released to the base material portion 36. Thereby, the heat dissipation performance of the light-emitting device 8 is improved, and accordingly, a reduction in light emission efficiency and thermal deterioration due to local heat concentration in the light-emitting device 8 can be suitably suppressed.

  Next, a second modification of the light emitting module 30 in the present embodiment will be described with reference to FIG. In the light emitting module 30 shown in FIG. 15, a single light emitting device 8 is mounted on the circuit board 31 instead of a plurality. In this figure, the light-emitting device 8 itself mounted on the circuit board 31 is the same as that described in FIGS. 1 to 3 and the like, but in order to ensure a sufficient amount of light emitted from the light-emitting module 30, each division is performed. You may increase the number which installs near ultraviolet semiconductor light-emitting device 3A, 3B in area | region part 12A, 12B.

  In this figure, the circuit board 31 (base material part 36) has a circular shape. The basic configuration of the circuit board 31 in the thickness direction is the same as that described in FIG. That is, the power supply conductor layer 32 is formed on the base member 36 so as to cover the base member 36 over almost the entire surface. Reference numerals 33X, 33Y, and 33Z in the figure represent the insulating members described above. The insulating member 33 </ b> Z is disposed along the outer edge of the base material portion 36. The insulating members 33X and 33Y are arranged in a cross shape orthogonal to each other so as to divide the in-plane region of the base material portion into four equal parts.

  Regarding the in-plane direction of the base material portion 36, the power supply conductor layer 32 is formed in a region excluding the portion where the insulating member 33 is disposed. The power supply conductor layer 32 is partitioned into a first system power supply conductor layer 32A and a second system power supply conductor layer 32B by an insulating member 33X. Since the meanings of these terms have already been described, the description thereof will be omitted, but the first system power supply conductor layer 32A corresponds to the power control system on the divided region portion 12A side, and the second system power supply conductor. The layer 32B corresponds to the power control system on the divided region portion 12B side.

  In addition, the first system power supply conductor layer 32A is divided into two conductor areas A1 and A2 by the insulating member 33Y, and the second system power supply conductor layer 32B is divided into conductor areas B1 and B2 in two minutes. (Partition). As in Example 1, the power supply conductor layer 32 is electrically insulated except for the places where the electrodes 21A and 21B of the light emitting device 8 are arranged and the places where the terminal portions 34A, 34B, 35A and 35B are formed. A protective coating layer 37 is further laminated.

  In this configuration, the electric power input from the + terminal portion 34A passes through the conductor region A1, the electrode 21A, the divided region portion 12A, the electrode 21A, and the conductor region A2, and reaches the −terminal portion 35A. Further, the electric power input from the + terminal portion 34B reaches the −terminal portion 35B via the conductor region B1 → the electrode 21B → the divided region portion 12B → the electrode 21B → the conductor region B2. As a result, the light emitting device 8 realizes independent light emission control for each power control system, that is, for each of the divided region portions 12A and 12B. As for the heat dissipation performance related to the light emitting device 8, heat from the light emitting device 8 is transmitted to the power supply conductor layer 32 (32A, 32B) as in the above-described embodiment. Since the supply conductor layer 32 is formed over almost the entire surface of the base material portion 36, the heat of the light emitting device 8 can be efficiently transported to the base material portion 36. Therefore, the heat dissipation performance in the light emitting device 8 is improved, and it is possible to suitably suppress the decrease in light emission efficiency, thermal degradation, and the like accompanying local heat concentration in the light emitting device 8.

  In the embodiment described so far, the case where the shape of the circuit board (base material portion) is a circular shape has been described as an example. However, the present invention is not limited to this, and various shapes may be adopted. I do not care. Here, a third modification of the light emitting module 30 will be described with reference to FIGS. 16 and 17. In the light emitting module 30 shown in FIG. 16, three light emitting devices 8 are mounted on the circuit board 310. Similar to the arrangement example described with reference to FIG. 14, the three light emitting devices 8 are equiangularly arranged on the same circumference with the center O of the circuit board 310 (base material portion 316) as a central point, and adjacent light emitting devices 8. The predetermined arrangement angle θ between them is 120 °. In addition, each light-emitting device 8 is equivalent to what was demonstrated in FIG. 12, and detailed description is abbreviate | omitted. Also in the present modification, the power supply conductor layer 32 is formed by the insulating member 33 in the plane of the base material portion 316, and the first system power supply conductor layer 32A (lattice hatching) and the second system power supply conductor layer. It is divided into 32B (horizontal hatching).

As shown in FIG. 16, the circuit board 310 (base material portion 316) has a circular shape to a segment shape.
Are formed in a shape (hereinafter referred to as “partially cut-out circular shape”). The arcuate notch is a region surrounded by a circular arc and a corresponding string. In the example of this figure, a pair of arcuate cutouts 311A and 311B (in the case of comprehensively referring to these arcuate cutouts) at symmetrical positions (positions shifted by 180 ° around the center O) with the center O in between. (Referred to as a notch 311).

  Thus, by configuring the circuit board 310 (base material portion 316) as a partially cut circular shape, the following points are effective. In other words, as shown in the drawing, each terminal part 34 on the circuit board 31 is arranged adjacent to the vicinity of the arcuate cutout part 311 so that the space for inserting the wiring connecting the external power supply and the terminal part 34 is inserted. An arcuate cutout 311 can be used. This wiring is led to the middle bottom portion 52 </ b> A side of the heat dissipation housing member 50 through the arcuate notch 311. A through hole (not shown) for passing the wiring connected to each terminal portion 34 is provided on the middle bottom 52A side, and the wiring is connected to an external power source (for example, a constant current circuit) through the through hole. It is connected to the. In addition, by arranging the terminal portions 34 together adjacent to each other on the circuit board 31 in this way, interference with the light emitting device 8 and other electronic components (such as a Zener diode) can be avoided and limited mounting is possible. Space can be used effectively.

Further, regarding the appearance (design) of the illumination device DL, in general, the user (user) has a tendency to sensuously and psychologically prefer a circular shape or a polygonal shape close to the circular shape as compared with a shape having acute corners. For example, a round illuminating device has less stress when viewed than a square illuminating device, and tends to favor a round illuminating device. In that regard, even when the circuit board 310 is partially cut out and formed into a circular shape, it can be suitably attached to the heat radiating housing member 50 including the cylindrical side wall portion 52, so It is possible to provide the lighting device DL having an appearance that matches the psychological preference. Moreover, for the above reason that the illumination device DL having a round appearance is preferred by users, a lot of cases having a cylindrical shape are in circulation as ready-made products (general-purpose products). And there exists the actual condition that the ratio for which the cost of the housing member 50 for heat radiation accounts is comparatively high among the manufacturing cost of the illuminating device DL whole. According to the circuit board 310 formed in a partially cut circular shape, it can be easily attached to a case as a general-purpose product that is widely distributed in the market. Therefore, the manufacturing cost in the illuminating device DL can be suitably suppressed.

  Further, by forming the circuit board 310 (base material part 316) as a partially cut circular shape, it is wasted when the base material part 316 is cut out from the raw material (for example, aluminum plate) S of the base material part 316. The area of the portion can be suitably reduced as compared with, for example, a case where the base material portion 316 is circular (see FIG. 17). Thereby, a larger number of base materials 316 can be manufactured from the same amount of raw material (for example, the same size aluminum plate) S. Therefore, the manufacturing cost required per circuit board 310 can be suitably suppressed. However, although it is one of the preferred embodiments that the circuit board 310 (base material portion 316) is partially cut out into a circular shape, the application of the present invention is not intended to be limited to these, and has already been described. Of course, it may be a round shape, a polygonal shape, or other shapes. Moreover, when making the base material part 316 into a partially notched circular shape, the number of the arcuate notched parts is not particularly limited. That is, the number is not limited to two shown in FIG. 16, and three or more arcuate notches may be provided, or a single arcuate notch may be provided.

<Example 2>
Next, Example 2 in the present embodiment will be described. The circuit board 31A of the light emitting module 30 in the second embodiment has the same basic configuration as the circuit board 31 described in the first embodiment, and the members already described are given the same reference numerals and the description thereof is omitted. . The circuit board 31 </ b> A in this example is different from that in Example 1 in that each light-emitting device 8 is mounted.

  FIG. 18 is a schematic view of the upper surface of the circuit board 31A according to the second embodiment. FIG. 19 is a diagram illustrating a state in which each light emitting device 8 is mounted on the circuit board 31 </ b> A according to the second embodiment. Similarly to the circuit board 31 of the first embodiment, the circuit board 31A includes the base material portion 36, the insulating layer 36A formed on the surface of the base material portion 36, and the power supply conductor layer 32, and includes a power supply conductor. The layer 32 is partitioned by the insulating member 330 in the in-plane direction of the base material portion 36. Further, the circuit board 31A is common to the circuit board 31 in the first embodiment in that each light emitting device 8 is arranged in an isometric shape on the same circumference with the center O as a center point.

  In FIG. 19, three (three) light emitting devices 8 are mounted on the circuit board 31A. Each light emitting device 8 is centered on the center O so that the predetermined arrangement angle θ between the adjacent light emitting devices 8 is 120 ° obtained by dividing 360 ° of the circumference of the center O by 3 which is the number of the light emitting devices 8. Are equiangularly arranged on the same circumference.

  Also in the circuit board 31A, the power supply conductor layer 32 is formed so as to cover substantially the entire surface of the base material portion 36, and the power supply conductor layer 32 further includes a first region corresponding to the divided region portion 12A. The insulating member 330 (thick solid line in the figure) is connected to the conductive layer 32A for system power supply (lattice hatching in the figure) and the second power supply conductor layer 32B (diagonal hatching in the figure) corresponding to the divided region portion 12B. Are divided in a plane. The insulating member 330 has the same function as the insulating member 33 described in the first embodiment.

In the circuit board 31A in the present embodiment, the partition 11 that divides the divided area portion 12A and the divided area portion 12B in each light emitting device 8 is arranged along the radial direction of the circuit board 31A (base material portion 36). This is different from the first embodiment. As described above, in this embodiment, the partition 11 that partitions the divided regions 12A and 12B of the light emitting devices 8 is disposed not in the circumferential direction but in the radial direction. The conductor layer 32A and the second system power supply conductor layer 32B are not concentrically arranged. The arrangement state of each light-emitting device 8 on the circuit board 31A is equivalent to a state in which the light-emitting device 8 is rotated exactly 90 ° with respect to the arrangement state on the circuit board 31 according to the first embodiment. The shape of the member 330 is generally bowl-shaped as shown.

  Further, in the present embodiment, in order to partition the first system power supply conductor layer 32A and the second system power supply conductor layer 32B in a more orderly manner, the relative positions of the divided region portion 12A and the divided region portion 12B with respect to the partition 11 The relationship is unified for each light emitting device 8. In the example shown in FIG. 19, when each light emitting device 8 is viewed from the center O side, the divided region portion 12B is disposed on the clockwise traveling direction side with the partition 11 as a boundary, and the divided region portion 12A is disposed on the opposite side. is doing. However, the positional relationship related to the arrangement of the divided region portions 12A and 12B may be reversed.

  As described above, in the circuit board 31A of the light emitting module 30 in the second embodiment, the boundary part (that is, the partition 11) between the divided area part 12A and the divided area part 12B of each light emitting device 8 is the radial direction of the circuit board 31A. Formed along. Even with such an arrangement pattern, the light emission from the divided region portion 12A and the divided region portion 12B of each light emitting device 8 can be easily combined with suppressing unevenness, so that the color mixture state of the light emitted from both regions becomes good. . Also in this embodiment, since the power supply conductor layer 32 is formed in a planar shape, the heat taken by the power supply conductor layer 32 from each light emitting device 8 is dispersed in the plane of the circuit board 31A. However, the effect of efficiently depriving the light-emitting device 8 from the light-emitting device 8 can be achieved as in the first embodiment.

  Hereinafter, variations of the circuit board 31A in the present embodiment will be described. 20 to 22 are views showing a state in which each light emitting device 8 is mounted on the circuit board 31A according to the first to third modifications of the second embodiment. 20 and 21 schematically differ from FIG. 19 only in the number of light-emitting devices 8 mounted on the circuit board 31A. In FIG. 20, five (five) light emitting devices 8 are mounted on the circuit board 31A. In this case, each light emitting device 8 is centered on the center O so that the predetermined arrangement angle θ between the adjacent light emitting devices 8 is 72 ° obtained by dividing 360 ° of the center O by 5 which is the number of the light emitting devices 8. Are equiangularly arranged on the same circumference. Others are substantially the same as the configuration example shown in FIG. 19, and the same effects as those described with reference to FIG. 19 can be obtained.

  In the configuration example shown in FIG. 21, six (six) light emitting devices 8 are mounted on the circuit board 31A. In this case, each light emitting device 8 is centered on the center O so that the predetermined arrangement angle θ between the adjacent light emitting devices 8 is 60 ° obtained by dividing 360 ° of the center O by 6 which is the number of the light emitting devices 8. Are equiangularly arranged on the same circumference. About others, it is substantially the same as that of the structural example shown in FIG.19 and FIG.20, and there exists an effect equivalent to these.

  FIG. 22 is a configuration diagram corresponding to FIG. 14 in the circuit board 31A of the present embodiment, and the interior of the reflector of each light emitting device 8 is divided into three divided region portions 12A to 12C. Therefore, also regarding the power supply conductor layer 32, the first system power supply conductor layer 32A (lattice hatching in the figure) and the second system power supply conductor layer 32B (in the figure) respectively corresponding to the divided regions 12A to 12C. , Oblique hatching), and the third system power supply conductor layer 32C (dot hatching in the figure) is partitioned by an insulating member 330.

Similarly to FIGS. 19 to 21, the partition 11 that divides each divided region portion 12 </ b> A to 12 </ b> C is arranged along the radial direction of the circuit board 31 </ b> A so that each divided region portion 12 </ b> A to 12 </ b> C extends along the radial direction. Is formed. Accordingly, similarly to the other configuration examples shown in FIGS. 19 to 21, light from each divided region portion of the light emitting device 8 can be easily combined, and these can be mixed well. Further, the effect that each light-emitting device 8 can be efficiently cooled can also be achieved in the same manner as in the configuration examples described above.

  The above-described embodiment is an example for explaining the present invention, and various modifications can be made to the above-described embodiment without departing from the gist of the present invention. In the present embodiment, the light emitting device 8 of the light emitting module 30 is exemplarily used to output white light, but the present invention may naturally be applied to light emitting devices that output other colors. In addition, the circuit board, the light emitting module, and the lighting device for mounting the semiconductor light emitting device according to the present invention are not limited to the above embodiment, and can include combinations thereof as much as possible.

DESCRIPTION OF SYMBOLS 1 ... Package 2 ... Base 3, 3A, 3B ... Semiconductor light emitting element 8 ... Semiconductor light emitting device 10 ... Reflector 11 ... Partition 12, 12A, 12B ... ... Dividing region part 13 ... Opening parts 13A, 13B ... Dividing opening parts 20, 20A, 20B ... Wirings 20C, 20D ... Counter wirings 21A, 21B ... Electrodes 30 ... Light emitting module 31 ... Circuit boards 32, 32A, 32B ... Power supply conductor layer 33 ... Insulating member 36 ... Base material 37 ... Electrical insulation Protective coating layer 50... Heat radiating housing member 51... Radiating fin portion 52.

Claims (8)

A circuit board for mounting a semiconductor light emitting device including at least a package, a semiconductor light emitting element, and a phosphor,
The package in the semiconductor light emitting device is opened at an opening that opens in the emission direction of the semiconductor light emitting device and a divided opening that is defined by dividing the inside of the package into two or more and is a part of the opening. Having at least two or more divided region portions;
Each of the divided region portions is
One or more of the semiconductor light emitting elements;
A fluorescent portion including the phosphor and a translucent material that seals each divided region portion, and
In at least one divided region portion and the other divided region portion among the plurality of divided region portions, the spectrum of light output from the fluorescent portion is different from each other,
A base material portion formed using a heat conductive material on which the semiconductor light emitting device is mounted;
A power supply unit that supplies power to each of the semiconductor light emitting elements by using at least one of the plurality of divided region units and another divided region unit as separate systems;
Have
The power supply unit is formed in a planar shape using a heat conductive material and covering the base material unit,
A circuit board for mounting a semiconductor light emitting device. An insulating member for insulating the power supply parts for supplying power to the semiconductor light emitting elements of different systems is provided on the base part,
The power supply unit is partitioned in the in-plane direction of the base material part by the insulating member for each system.
A circuit board for mounting the semiconductor light emitting device according to claim 1.   A heat radiating housing member is attached to the base portion so as to be in thermal contact with the non-mounting surface on which the semiconductor light emitting device is not mounted, and is transmitted to the base portion via the power supply portion. The circuit board for mounting the semiconductor light-emitting device according to claim 1, wherein heat from the semiconductor light-emitting device is radiated from the heat radiating housing member to the atmosphere. A light emitting module including at least a package, a semiconductor light emitting element, and a semiconductor light emitting device including a phosphor, and a circuit board for mounting the semiconductor light emitting device,
The package in the semiconductor light emitting device is opened at an opening that opens in the emission direction of the semiconductor light emitting device and a divided opening that is defined by dividing the inside of the package into two or more and is a part of the opening. Having at least two or more divided region portions;
Each of the divided region portions is
One or more of the semiconductor light emitting elements;
A fluorescent portion including the phosphor and a translucent material that seals each divided region portion, and
In at least one divided region portion and the other divided region portion among the plurality of divided region portions, the spectrum of light output from the fluorescent portion is different from each other,
The circuit board is
A base material portion formed using a heat conductive material on which the semiconductor light emitting device is mounted;
A power supply unit that supplies power to each of the semiconductor light emitting elements by using at least one of the plurality of divided region units and another divided region unit as separate systems;
Have
The power supply unit is formed in a planar shape using a heat conductive material and covering the base material unit,
Light emitting module. In the circuit board, the base member is provided with an insulating member for insulating the power supply units that supply power to the semiconductor light emitting elements of different systems.
The power supply unit is partitioned in the in-plane direction of the base material part by the insulating member for each system.
The light emitting module according to claim 4. In the circuit board,
A plurality of the semiconductor light emitting devices are mounted on the base material portion,
The power supply section partitioned for each system by the insulating member connects the semiconductor light emitting elements included in the divided region portions corresponding to each other in each of the semiconductor light emitting devices in series.
The light emitting module according to claim 4 or 5. Each of the plurality of semiconductor light emitting devices mounted on the base portion of the circuit board is annularly arranged with an equiangular interval between the semiconductor light emitting devices,
When one semiconductor light emitting device is used as a reference, the relative positional relationship between the one divided region portion and the other divided region portion in the package is such that the opening portion is adjacent to the adjacent semiconductor light emitting device. In the rotational direction within the opening surface, 360 ° is arranged in a state shifted by a predetermined angle defined by dividing the number of the semiconductor light emitting devices mounted on the base portion,
The power supply unit is partitioned concentrically around a predetermined reference point in the base material surface for each system.
The light emitting module according to claim 6. The light emitting module according to any one of claims 4 to 7,
A heat radiating housing member attached to the circuit board of the light emitting module so as to be in thermal contact with the non-mounting surface of the base portion on which the semiconductor light emitting device is not mounted;
A lighting device comprising:

Images