JP2009231525A - Light-emitting module, and illuminator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting module which is useful for forming an illuminator using a semiconductor light-emitting element and a phosphor, and capable of avoiding as further as possible light emission from the semiconductor light-emitting element or the phosphor from being separated. <P>SOLUTION: The present invention relates to a light-emitting module comprising a plurality of semiconductor light-emitting devices each comprising at least a package, a semiconductor light-emitting element and a phosphor. Each of the packages includes an opening part that is opened in an emission direction of the semiconductor light-emitting device and at least one divided area portion and another divided area portion defined by dividing the inside of the package into two or more areas. When one semiconductor light-emitting device is defined as a reference, each of the plurality of semiconductor light-emitting devices is disposed while being deviated, with respect to the neighboring semiconductor light-emitting device, just at a predetermined angle defined by dividing 360° with the number of semiconductor light-emitting devices provided in the light-emitting module, in a rotating direction within an opening plane of the opening part. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a light emitting module that emits light to the outside by light emission from a semiconductor light emitting element, and an illumination device including the same.

  In recent years, lighting devices using light emitting diodes (LEDs), which are semiconductor light emitting elements, have been widely proposed in place of conventional lighting devices for energy saving and various other purposes. Further, LEDs are also expected as a light source for color tone variable illumination that has been difficult to achieve with conventional light sources. As an example, a lighting device that outputs white light by making red LED, green LED, and blue LED into one package is disclosed (see, for example, Patent Document 1). In this technology, by adjusting the drive current supplied to the three types of LEDs according to the forward voltage of each LED, the luminous efficiency of each LED is made constant and the brightness of white light is stabilized. In addition, it is devised to emit light of various colors.

In addition, as a lighting technology using LEDs, by combining a blue LED and a semiconductor light emitting device that emits red, blue, and green light using phosphors for red and green coloring, the output of the LED is controlled. A technique for tracing a black body radiation locus and emitting white light close to natural light is disclosed (see, for example, Patent Documents 1 to 3, Non-Patent Document 1 and the like).
JP 2007-59260 A JP 2007-265818 A JP 2007-299590 http://techon.nikkeibp.co.jp/article/NEWS/20070704/135373/ (Tech-on report on Nikkei BPnet Tech-on)

  In an illumination device using various semiconductor light emitting elements such as a red semiconductor light emitting element, a green semiconductor light emitting element, and a blue semiconductor light emitting element as a light source as they are, the output angle of each semiconductor light emitting element is generally low because the orientation angle of the semiconductor light emitting element is generally narrow. It is difficult to synthesize light, and light separation may occur on the surface irradiated with the synthesized light. Further, even in an illumination device using various semiconductor light emitting elements and phosphors in combination, there is a case where light is also separated on the irradiated surface of the synthesized light although there is light scattering by the phosphors.

  In particular, in a lighting device using a semiconductor light emitting element, a lens element such as a convex lens may be used. In such a case, the separation of light on the irradiated surface of the synthesized light tends to be remarkable.

  In view of the above-described problems, the present invention is a light-emitting module that is useful in forming a lighting device using a semiconductor light-emitting element and a phosphor, and avoids the separation of light emission from the semiconductor light-emitting element or the phosphor as much as possible. An object of the present invention is to provide a light emitting module that can be used.

  In order to solve the above problems, in the present invention, in a light emitting module including a plurality of semiconductor light emitting devices that emit light to the outside by light emission from a package on which a semiconductor light emitting element is mounted, a plurality of output surfaces of light from the package are provided. The semiconductor light emitting elements and the fluorescent portions were arranged in correspondence with each other, and the directions of the semiconductor light emitting devices in the module were equally shifted in the rotation direction. By doing in this way, the light emitted from the semiconductor light emitting element or the like is uniformly synthesized and the separation of the light on the irradiation surface is suppressed.

  Specifically, the present invention includes at least a package, a semiconductor light emitting element, and a phosphor, and emits light from the semiconductor light emitting element and emits light from the phosphor that is excited and fluorescent by the light emission, or from the semiconductor light emitting element. The light emitting module includes a plurality of semiconductor light emitting devices that emit light to the outside by light emission from the phosphor that is excited and fluorescent by the light emission of The package in each of the semiconductor light emitting devices has an opening that opens in the emission direction of the semiconductor light emitting device, and a divided opening that is defined by dividing the inside of the package into two or more and is a part of the opening At least one divided region portion and another divided region portion that are opened in the portion. Further, each of the one divided region portion and the other divided region portion includes one or a plurality of the semiconductor light emitting elements, a power supply unit that supplies power to the semiconductor light emitting elements, the phosphor, and each divided portion. A fluorescent portion including a light-transmitting material that seals the region portion. In the light emitting module according to the present invention configured as described above, each of the plurality of semiconductor light emitting devices has the one divided region portion in the package and the other when the one semiconductor light emitting device is used as a reference. The relative positional relationship with the divided region portion is 360 degrees with respect to the adjacent semiconductor light emitting device in the rotation direction within the opening surface of the opening portion divided by the number of the semiconductor light emitting devices provided in the light emitting module. Are arranged in a shifted state by a predetermined angle defined as above.

  In the semiconductor light emitting device included in the light emitting module, at least one divided region portion and another portion and a region portion are provided in the package so as to divide the opening for emitting output light from the device into two or more. Defined. The opening portions in these divided region portions are defined as the divided opening portions, and the divided opening portions occupy a part of the opening portions of the light emitting device main body. Here, each divided region portion is provided with a semiconductor light emitting element, a corresponding power supply portion, and a fluorescent portion including a phosphor and a translucent material. Accordingly, the output light from each semiconductor light emitting element excites the phosphor to cause it to fluoresce, and then travels through the translucent material together with the light emitted from the phosphor, and reaches the outside from the divided opening of the corresponding divided region.

  Thus, in the semiconductor light emitting device, one or a plurality of semiconductor light emitting elements, a corresponding power supply unit, and a fluorescent unit are combined in one package, and the plurality of combinations are packaged. . And the light output from each fluorescence part is output along an output direction from each division | segmentation opening part. Preferably, in the light emitting module, there is only one type of semiconductor light emitting element, and the phosphors provided in each divided region portion are different. With this configuration, it is possible to emit light having different spectra from each divided region portion while facilitating control of the power supplied to the semiconductor light emitting element via the power supply portion. Contributes to easy control.

  Here, in the light emitting module, the relative positional relationship (hereinafter also referred to as “divided region portion relationship”) between one divided region portion and another divided region portion in a plurality of semiconductor light emitting devices provided is one. The semiconductor light emitting devices are installed differently from each other. More specifically, the relationship between the divided region portions of the semiconductor light emitting devices arranged in the light emitting module is shifted by a predetermined angle between adjacent semiconductor light emitting devices, in other words, the divided region portion relationship equally. Is rotated and shifted, thereby making the relationship between the divided regions of the individual semiconductor light emitting devices different. As a result, when considered in units of light emitting modules, the light emitted from one divided region and the light emitted from the other divided region are combined evenly and uniformly, and finally emitted from the light emitting module. In the synthesized light, the separation of light is effectively suppressed.

Here, in the light emitting module, the plurality of semiconductor light emitting devices are arranged in an annular shape and the intervals between the semiconductor light emitting devices are equiangular, and one divided region portion in each package of the semiconductor light emitting device And the other divided region portions have different spectrums of light output from the fluorescent portion, and each of the one divided region portions is disposed inside the semiconductor light emitting device arranged in a ring shape. It may be. Therefore, each of the other divided region portions is arranged outside the semiconductor light emitting device arranged in a ring shape. By arranging a plurality of semiconductor light emitting devices in the light emitting module in this way, the light emitted from each semiconductor light emitting device can be easily combined uniformly, so that the combined light finally emitted from the light emitting module is effective. Therefore, the separation of light is suppressed.

  The annular arrangement of the semiconductor light emitting devices in the light emitting module includes the case where there are two semiconductor light emitting devices. That is, the two semiconductor light emitting devices are arranged side by side, and two semiconductor light emitting devices are arranged at an equiangular angle of 180 degrees in a state where one divided region of each semiconductor light emitting device is opposed. This is equivalent to

  In addition, the semiconductor light emitting device in the light emitting module may be arranged as follows. That is, the plurality of semiconductor light emitting devices are arranged in a straight line and the intervals between the semiconductor light emitting devices are equidistant, and one divided region portion and another divided region portion in each package of the semiconductor light emitting device The spectrum of light output from the fluorescent part may be different from each other. By arranging a plurality of semiconductor light emitting devices in the light emitting module in this manner, the light emitted from the semiconductor light emitting devices can be easily combined uniformly, and therefore effective in the combined light finally emitted from the light emitting module. Therefore, the separation of light is suppressed.

  Here, in the light emitting module described above, the power supply units included in each of the one divided region units are connected in series to each other, and the power supply units included in each of the other divided region units are connected to each other. You may make it connect in series and the said electric power supply part which each of said one division area part has independently. As described above, by electrically connecting the power supply units, it is possible to easily control light emission in the light emitting module.

  In the light emitting module described above, a current value supplied by the power supply unit included in each of the one divided region units, and a current value supplied by the power supply unit included in each of the other divided region units, May be controlled to be constant. Thus, by performing constant control of the total sum of the current values, the final light emission amount from the semiconductor light emitting element provided with the two divided region portions that emit light can be made constant. Thereby, it becomes easy to keep the light emission amount as a light emitting module constant while changing the spectrum of the synthesized light by the synthesis of the light emission from each divided region portion.

  And the illuminating device comprised using the light emitting module to the above-mentioned one or more is also useful. By combining the light emitting modules modularized in this way, various lighting devices can be easily designed.

  The light emitting module is useful for forming a lighting device using a semiconductor light emitting element and a phosphor, and separation of light emission from the semiconductor light emitting element or the phosphor can be avoided as much as possible.

  Here, an embodiment of a light emitting module according to the present invention will be described based on the drawings attached to the specification. In addition, the said Example shows an example of the light emitting module which concerns on this invention, and does not limit the scope of the right of this invention to it.

Here, FIG. 1A is a schematic configuration of the package 1 in a semiconductor light emitting device (hereinafter simply referred to as “light emitting device”) 8 constituting a light emitting module 30 (see FIG. 7 described later) according to the present invention. FIG. 1B is a diagram illustrating a mounting state of wirings 20A and 20B that supply power to the semiconductor light emitting elements 3A and 3B provided in the package 1. FIG. FIG. 1C is a diagram schematically showing the light-emitting device 8 shown in FIGS. 1A and 1B using electrical symbols. Further, FIG. 2 is a cross-sectional view of the light emitting device 8 shown in FIG. 1A when cut along a plane including the wirings 20A and 20B.

  As shown in FIG. 1A, the light emitting device 8 includes a package 1, and the package 1 has an annular and frustoconical reflector 10 disposed on a substrate 2. The reflector 10 has a function of guiding a part of output light from each divided region portion 12 described later in the emission direction of the light emitting device 8 and also functions as a main body of the package 1. In addition, the upper surface side of the truncated cone shape of the reflector 10 becomes a light emitting direction by the light emitting device 8 and forms an opening 13. On the other hand, the substrate 2 is disposed on the lower surface side of the truncated cone shape of the reflector 10, and although details will be described later, wiring for supplying power to each semiconductor light emitting element is laid or the like (the wiring is shown in FIG. 1A). Not shown).

  And the partition 11 which divides | segments the space inside this cyclic | annular reflector 10 equally into two area | regions as shown to FIG. 1A and FIG. The partition 11 defines two divided region portions 12A and 12B in the reflector 10, and the opening portion of the divided region portion 12A occupies the right half of the opening portion 13 of the reflector 10, and the opening of the divided region portion 12B. The part occupies the left half of the opening 13 of the reflector 10. In the present application, the opening of the divided region portion 12A is referred to as a divided opening portion 13A, and the opening portion of the divided region portion 12B is referred to as a divided opening portion 13B. That is, the opening 13 is divided into the divided openings 13A and 13B by the partition 11.

  Each of the divided region portions 12A and 12B is provided with four near-ultraviolet semiconductor light-emitting elements 3A and 3B each of which is a semiconductor light-emitting element and outputs near-ultraviolet light as output light. These near-ultraviolet semiconductor light-emitting elements 3A and 3B (when these near-ultraviolet semiconductor light-emitting elements are comprehensively referred to are referred to as near-ultraviolet semiconductor light-emitting elements 3), paired wirings 20A and 20B (generally wiring 20 Are connected to each other and emit light when receiving power supply. As shown in FIG. 1B, four near-ultraviolet semiconductor light-emitting elements 3A are mounted on the wiring 20A to connect the near-ultraviolet semiconductor light-emitting element 3 to the wiring 20 in each divided region. Four near-ultraviolet semiconductor light emitting elements 3B are mounted thereon. The four semiconductor light emitting elements 3 in each divided region are connected in parallel to the corresponding wiring in the forward direction.

  The mounting state of these near-ultraviolet semiconductor light-emitting elements 3A and 3B is schematically shown in FIG. 1C. That is, power is supplied from the wiring 20A to the four near ultraviolet semiconductor light emitting elements 3A arranged in the divided region portion 12A, and the four near ultraviolet semiconductor light emitting elements 3B arranged in the divided region portion 12B are supplied. Thus, power is supplied from the wiring 20B. At this time, the voltage applied to each near ultraviolet semiconductor light emitting element 3 is in the range of 3.3V to 3.9V, and the supply current is in the range of 40 mA to 200 mA. This power supply may be performed in consideration of the light emission intensity of the entire light emitting module 30, which will be described later.

Here, mounting of the near-ultraviolet semiconductor light-emitting element 3 on the substrate 2 will be described with reference to FIG. The substrate 2 is a base for holding the light emitting device 8 including the near ultraviolet semiconductor light emitting element 3, and is formed on the metal base member 2A, the insulating layer 2D formed on the metal base member 2A, and the insulating layer 2D. The pair wirings 20C and 20D are provided. The near-ultraviolet semiconductor light-emitting element 3 has a p-electrode and an n-electrode as a pair of electrodes on opposite bottom and top surfaces, and near-ultraviolet semiconductor light emission via the AuSn eutectic solder 5 on the top surface of the pair wiring 20C. The electrode on the bottom side of the element 3 is joined. The electrode on the upper surface side of the near-ultraviolet semiconductor light emitting element 3 is connected to the other pair wiring 20 </ b> D by a metal wire 6. The pair of wirings 20C and 20D form a pair of wirings 20A or 20B shown in FIG. 1B, and power is supplied to the four near-ultraviolet semiconductor light-emitting elements 3 in each divided region.

  Note that the electrical connection between the near-ultraviolet semiconductor light-emitting element 3 and the pair of wirings 20C and 20D on the substrate 2 is not limited to the form shown in FIG. An appropriate method can be used. For example, when a set of electrodes is provided only on one surface of the near-ultraviolet semiconductor light-emitting element 3, the near-ultraviolet semiconductor light-emitting element 3 is installed with the surface on which the electrode is provided facing upward. The pair wirings 20C and 20D and the near-ultraviolet semiconductor light emitting element 3 can be electrically connected by connecting the respective pair wirings 20C and 20D with, for example, gold wires 6. When the near-ultraviolet semiconductor light-emitting element 3 is flip-chip (face-down), the electrodes of the near-ultraviolet semiconductor light-emitting element 3 and the pair wirings 20C and 20D are electrically connected by bonding with gold bumps or solder. Can do.

  Here, the near-ultraviolet semiconductor light-emitting element 3 emits light in the near-ultraviolet region (emission wavelength region of 360 nm to 430 nm) when power is supplied, and the fluorescent portions 14A and 14B (to be comprehensively described, the fluorescent portion 14) described later. It may also be referred to as “). Among these, a GaN-based semiconductor light-emitting element using a GaN-based compound semiconductor is preferable. This is because the GaN-based semiconductor light-emitting device emits light in this region, but the light output and external quantum efficiency are remarkably large, and when combined with a phosphor described later, very light emission can be obtained with very low power. Because. In the GaN-based semiconductor light emitting device, one having an AlxGayN light emitting layer, a GaN light emitting layer, or an InxGayN light emitting layer is preferable. Among the GaN-based semiconductor light-emitting elements, those having an InxGayN light-emitting layer are particularly preferable because the emission intensity is very strong, and those having a multiple quantum well structure of an InxGayN layer and a GaN layer have a very high emission intensity. It is particularly preferable because it is strong.

  In the above composition formula, the value of x + y is usually in the range of 0.8 to 1.2. In the GaN-based semiconductor light-emitting device, those in which these light-emitting layers are doped with Zn or Si and those without a dopant are preferable for adjusting the light emission characteristics.

  A GaN-based semiconductor light-emitting element has these light-emitting layer, p-layer, n-layer, electrode, and substrate as basic components, and the light-emitting layer is an n-type or p-type AlxGayN layer, GaN layer, or InxGayN layer. Those having a sandwiched heterostructure are preferable because of high emission efficiency, and those having a heterostructure having a quantum well structure are more preferable because of higher emission efficiency.

  Further, examples of the growth method of the GaN-based crystal layer for forming the GaN-based semiconductor light emitting device include the HVPE method, the MOVPE method, and the MBE method. When forming a thick film, the HVPE method is preferable, but when forming a thin film, the MOVPE method or the MBE method is preferable.

As shown in FIG. 3, on the substrate 2, a plurality of or single phosphors that absorb part of the light emitted from the near-ultraviolet semiconductor light-emitting element 3 and emit light of different wavelengths and the phosphors A fluorescent part 14 containing a light-transmitting material to be sealed is provided so as to cover the near-ultraviolet semiconductor light-emitting element 3. Although the description of the reflector 10 is omitted in FIG. 3, such a form can also be a form of a semiconductor light emitting device constituted by a package. Part or all of the light emitted from the near-ultraviolet semiconductor light-emitting element 3 is absorbed as excitation light by the light-emitting substance (phosphor) in the fluorescent portion 14. More specifically, the fluorescent portion in the light emitting device 8 will be described with reference to FIG. 2. In the divided region portion 12A, the fluorescent portion 14A covers the near-ultraviolet semiconductor light emitting element 3A, and the fluorescent portion 14A is formed in the divided opening portion 13A. Exposed. In the divided region portion 12B, the fluorescent portion 14B covers the near ultraviolet semiconductor light emitting element 3B, and the fluorescent portion 14B is exposed at the divided opening 13B. Therefore, output light from each fluorescent part is emitted to the outside from each divided opening.

  Next, the fluorescent part 14 will be described in detail. The light emitting device 8 according to the present embodiment is intended to output white light. In particular, the light emission color of the light emitting device 8 is black in the uv chromaticity diagram of the UCS (u, v) color system (CIE 1960). Three kinds of phosphors of a red phosphor, a green phosphor, and a blue phosphor are employed so that the deviation duv from the body radiation locus satisfies −0.02 ≦ duv ≦ 0.02. Specifically, the following can be used. The deviation duv from the black body radiation locus in the present invention follows the definition in the remarks in Section 5.4 of JIS Z8725 (Measurement method of light source distribution temperature and color temperature / correlated color temperature).

  Illustrating the specific wavelength range of the fluorescence emitted by the red phosphor suitable for the present invention, the main emission peak wavelength is usually 570 nm or more, preferably 580 nm or more, particularly preferably 610 nm or more, and usually 700 nm or less. Preferably it is 680 nm or less, Especially preferably, it is 660 nm or less. The half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 120 nm or less, preferably 110 nm or less, particularly preferably 100 nm or less.

The red phosphor is composed of, for example, fractured particles having a red fracture surface, and emits light in the red region (Mg, Ca, Sr, Ba) ₂ Si ₅ N ₈ : europium activated alkaline earth represented by Eu. Silicon nitride-based phosphor, which is composed of growing particles having a substantially spherical shape as a regular crystal growth shape, and emits light in the red region (Y, La, Gd, Lu) ₂ O ₂ S: represented by Eu And europium activated rare earth oxychalcogenide phosphors.

  And a phosphor containing oxynitride and / or oxysulfide containing at least one element selected from the group consisting of Ti, Zr, Hf, Nb, Ta, W, and Mo, A phosphor containing an oxynitride having an alpha sialon structure in which some or all of the elements are substituted with Ga elements can also be used. These are phosphors containing oxynitride and / or oxysulfide.

Other red phosphors include Eu-activated oxysulfide phosphors such as (La, Y) ₂ O ₂ S: Eu, Y (V, P) O ₄ : Eu, Y ₂ O ₃ : Eu, etc. Eu-activated oxide phosphors of (Ba, Sr, Ca, Mg) ₂ SiO ₄ : Eu, Mn, (Ba, Mg) ₂ SiO ₄ : Eu, Mn such as Eu, Mn
Activated silicate phosphor, Eu activated sulfide phosphor such as (Ca, Sr) S: Eu, YAlO ₃ : Eu
Eu-activated aluminate phosphor such as LiY ₉ (SiO ₄ ) ₆ O ₂ : Eu, Ca ₂ Y ₈ (SiO ₄ ) ₆ O ₂ : Eu, (Sr, Ba, Ca) ₃ SiO ₅ : Eu, Eu-activated silicate phosphors such as Sr ₂ BaSiO ₅ : Eu, (Y, Gd) ₃ Al ₅ O ₁₂ : Ce, (Tb, Gd) ₃ Al ₅ O ₁₂ : Ce-activated aluminate fluorescence such as Ce Body, (Ca, Sr, Ba) ₂ Si ₅ N ₈ : Eu, (Mg, Ca, Sr, Ba)
Eu-activated nitride phosphors such as SiN ₂ : Eu, (Mg, Ca, Sr, Ba) AlSiN ₃ : Eu, Ce-activated nitride phosphors such as (Mg, Ca, Sr, Ba) AlSiN ₃ : Ce (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, Mn-activated halophosphate phosphors such as Eu and Mn, Ba ₃ MgSi ₂ O ₈ : Eu, Mn, (Ba, Sr) , Ca, Mg) ₃ (Zn, Mg) Si ₂ O ₈ : Eu, Mn activated silicate phosphor such as Eu, Mn, 3.5Mn activated germane such as 3.5MgO · 0.5MgF ₂ · GeO ₂ : Mn Acid activated phosphor, Eu activated oxynitride phosphor such as Eu activated α sialon, (Gd, Y, Lu, La) ₂ O ₃ : Eu, Bi activated oxide phosphor such as Eu, Bi, ( Gd, Y
, Lu, La) ₂ O ₂ S: Eu, Bi-activated oxysulfide phosphors such as Eu and Bi, (Gd, Y, Lu, La) VO ₄ : Eu, Bi-activated vanadic acid such as Eu, Bi, etc. Salt phosphor, SrY ₂ S ₄ : Eu, Ce activated sulfide phosphor such as Eu, Ce, CaLa ₂ S ₄ : Ce activated sulfide phosphor such as Ce, (Ba, Sr, Ca) MgP ₂ O ₇ : Eu, Mn, (Sr, Ca, Ba, Mg, Zn) ₂ P ₂ O ₇
: Eu, Mn activated phosphor phosphor such as Eu, Mn, (Y, Lu) ₂ WO ₆ : Eu, Mo activated tungstate phosphor such as Eu, Mo, (Ba, Sr, Ca) _x Si _y N _z : Eu, Ce activated nitride phosphor such as Eu, Ce (where x, y, z are integers of 1 or more), (Ca, Sr, B)
a, Mg) ₁₀ (PO ₄ ) ₆ (F, Cl, Br, OH) ₂ : Eu, Mn-activated halophosphate phosphor such as Eu, Mn, ((Y, Lu, Gd, Tb) _{1-x sc x Ce y) 2 (Ca} , Mg) 1-r (Mg, Zn) can be used for _{2 + r Si zq GeqO 12+ δ} Ce -activated silicate phosphor such like.

  Further, as red phosphors, β-diketonates, β-diketones, aromatic carboxylic acids, red organic phosphors composed of rare earth element ion complexes having an anion such as Bronsted acid as a ligand, perylene pigments ( For example, dibenzo {[f, f ′]-4,4 ′, 7,7′-tetraphenyl} diindeno [1,2,3-cd: 1 ′, 2 ′, 3′-lm] perylene), anthraquinone series Pigment, lake pigment, azo pigment, quinacridone pigment, anthracene pigment, isoindoline pigment, isoindolinone pigment, phthalocyanine pigment, triphenylmethane basic dye, indanthrone pigment, indophenol It is also possible to use pigments, cyanine pigments, and dioxazine pigments.

  Illustrating the specific wavelength range of the fluorescence emitted by the green phosphor suitable for the present invention, the main emission peak wavelength is usually 500 nm or more, preferably 510 nm or more, particularly preferably 520 nm or more, and usually 580 nm or less, Preferably it is 570 nm or less, Especially preferably, it is 560 nm or less. Further, the half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 120 nm or less, preferably 90 nm or less, particularly preferably 60 nm or less.

As such a green phosphor, for example, europium activation represented by (Mg, Ca, Sr, Ba) Si ₂ O ₂ N ₂ : Eu that is composed of fractured particles having a fracture surface and emits light in the green region. An alkaline earth silicon oxynitride phosphor, composed of fractured particles having a fracture surface, emits green light (Ba, Ca, Sr, Mg) ₂ SiO ₄ : europium activated alkaline earth expressed by Eu Silicate phosphors and the like.

In addition, as the green phosphor, Sr ₄ Al ₁₄ O ₂₅ : Eu, (Ba, Sr, Ca)
Eu activated aluminate phosphors such as Al ₂ O ₄ : Eu, (Sr, Ba) Al ₂ Si ₂ O ₈ : Eu, (Ba, Mg) ₂ SiO ₄ : Eu, (Ba, Sr, Ca, Mg ) ₂ SiO ₄ : Eu, (Ba, Sr, Ca) ₂ (Mg, Zn) Si ₂ O ₇ : Eu-activated silicate phosphor such as Eu, Y ₂ SiO ₅ : Ce, Tb, etc. with Ce, Tb Activated silicate phosphor, Sr ₂ P ₂ O ₇ —Sr ₂ B ₂ O ₅ : Eu-activated borate phosphate phosphor such as Eu, Sr ₂ Si ₃ O ₈ -2SrCl ₂ : Eu-activated halo such as Eu Silicate phosphor, Zn ₂ SiO ₄ : Mn-activated silicate phosphor such as Mn, CeMgAl ₁₁ O ₁₉ : Tb, Y ₃ Al ₅ O ₁₂ :
Tb-activated aluminate phosphor such as Tb, Ca ₂ Y ₈ (SiO ₄ ) ₆ O ₂ : Tb, La ₃ Ga ₅ Si
O ₁₄ : Tb activated silicate phosphor such as Tb, (Sr, Ba, Ca) Ga ₂ S ₄ : Eu, Tb, Sm activated thiogallate phosphor such as Eu, Tb, Sm, Y ₃ (Al, Ga) ) ₅ O ₁₂ : Ce, (Y, G
a, Tb, La, Sm, Pr, Lu) ₃ (Al, Ga) ₅ O ₁₂ : Ce-activated aluminate phosphor such as Ce, Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce, Ca ₃ (Sc, Mg, Na, Li) ₂ Si ₃ O ₁₂ : Ce-activated silicate phosphor such as Ce, Ce-activated oxide phosphor such as CaSc ₂ O ₄ : Ce, SrSi ₂ O ₂ N ₂ : Eu, (Sr , Ba, Ca) Si ₂ O ₂ N ₂ : Eu, Eu-activated oxynitride phosphors such as Eu-activated β sialon, BaMgAl ₁₀ O ₁₇ : Eu, Mn-activated aluminate phosphors such as Eu and Mn SrAl ₂ O ₄ : Eu activated aluminate phosphor such as Eu, (La, Gd, Y) ₂ O ₂ S: Tb activated oxysulfide phosphor such as Tb, LaPO ₄ : Ce, Tb, etc. Ce, Tb-activated phosphate phosphors, sulfide phosphors such as ZnS: Cu, Al, ZnS: Cu, Au, Al, (Y, G
a, Lu, Sc, La) BO ₃ : Ce, Tb, Na ₂ Gd ₂ B ₂ O ₇ : Ce, Tb, (Ba, S
r) ₂ (Ca, Mg, Zn) B ₂ O ₆ : Ce, Tb activated borate phosphor such as K, Ce, Tb, Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu such as Eu, Mn, Mn-activated halosilicate phosphor, (Sr, Ca
, Ba) (Al, Ga, In) ₂ S ₄ : Eu and other Eu-activated thioaluminate phosphors and thiogallate phosphors, (Ca, Sr) ₈ (Mg, Zn) (SiO ₄ ) ₄ Cl ₂ : Eu It is also possible to use Eu, Mn activated halosilicate phosphors, etc.

  In addition, as the green phosphor, it is also possible to use a pyridine-phthalimide condensed derivative, a benzoxazinone-based, a quinazolinone-based, a coumarin-based, a quinophthalone-based, a nartaric imide-based fluorescent dye, or an organic phosphor such as a terbium complex. is there.

  Illustrating the specific wavelength range of the fluorescence emitted by the blue phosphor suitable for the present invention, the main emission peak wavelength is usually 430 nm or more, preferably 440 nm or more, and usually 500 nm or less, preferably 480 nm or less, particularly Preferably it is 460 nm or less. Further, the half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 100 nm or less, preferably 80 nm or less, particularly preferably 70 nm or less.

As such a blue phosphor, europium-activated barium magnesium aluminate represented by BaMgAl ₁₀ O ₁₇ : Eu, which is composed of growing particles having a substantially hexagonal shape as a regular crystal growth shape and emits light in a blue region. System phosphor, composed of growing particles having a substantially spherical shape as a regular crystal growth shape, and emits light in a blue region with a europium represented by (Ca, Sr, Ba) ₅ (PO ₄ ) ₃ Cl: Eu An active calcium halophosphate phosphor is composed of growing particles having a substantially cubic shape as a regular crystal growth shape, and emits light in a blue region (Ca, Sr, Ba) ₂ B ₅ O ₉ Cl: Eu. Europium-activated alkaline earth chloroborate phosphor, composed of fractured particles having a fracture surface, and emitting light in the blue-green region (Sr, Ca, Ba) A l ₂ O ₄ : Eu or (Sr, Ca, Ba) ₄ Al ₁₄ O ₂₅ : Eu
Europium-activated alkaline earth aluminate phosphors represented by

In addition, as the blue phosphor, Sn-activated phosphate phosphors such as Sr ₂ P ₂ O ₇ : Sn, Sr ₄ Al ₁₄ O ₂₅ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, BaAl ₈ O ₁₃ : Eu-activated aluminate phosphors such as Eu, Ce-activated thiogallate phosphors such as SrGa ₂ S ₄ : Ce, CaGa ₂ S ₄ : Ce, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, Tb, Sm activated aluminate phosphor such as Eu, Tb, Sm, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, Mn activated aluminate phosphor such as Eu, Mn (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, (Ba, Sr, Ca) ₅ (PO ₄ ) ₃ (Cl, F, Br, OH): Eu, Mn, Sb, etc. of Eu, Tb, Sm-activated halophosphate _{phosphor, BaAl 2 Si 2 O 8:} Eu, (Sr, B ) ₃ MgSi ₂ O _8: Eu-activated silicate phosphors such as _{Eu, Sr 2 P 2 O 7} : Eu , etc. E of
u-activated phosphate phosphor, sulfide phosphor such as ZnS: Ag, ZnS: Ag, Al, Y ₂ Si
O ₅ : Ce-activated silicate phosphor such as Ce, tungstate phosphor such as CaWO ₄ , (Ba,
_{Sr, Ca) BPO 5: Eu} , Mn, (Sr, Ca) 10 (PO 4) 6 · nB 2 O 3: Eu, 2SrO · 0.84P 2 O 5 · 0.16B 2 O 3: Eu such as Eu , Mn-activated borate phosphate phosphors, Eu-activated halosilicate phosphors such as Sr ₂ Si ₃ O ₈ .2SrCl ₂ : Eu, and the like can also be used.

  In addition, as the blue phosphor, for example, naphthalic acid imide-based, benzoxazole-based, styryl-based, coumarin-based, pyrazoline-based, triazole-based compound fluorescent dyes, thulium complexes and other organic phosphors can be used .

  Note that the red, green, and blue phosphors described above may be used in appropriate combination according to a desired emission spectrum, color temperature, chromaticity coordinates, color rendering properties, luminous efficiency, and the like.

The light-emitting device 8 of the present invention only needs to include the above-described near-ultraviolet semiconductor light-emitting element 3 and the fluorescent portion 14 including a phosphor, and other configurations are not particularly limited. The near-ultraviolet semiconductor light-emitting element 3 and the fluorescent part 14 are usually arranged so that the phosphor is excited by the light emission of the near-ultraviolet semiconductor light-emitting element 3 to emit light, and the emitted light is extracted outside. When having such a structure, the near-ultraviolet semiconductor light-emitting element 3 and the phosphor described above are usually sealed and protected with a light-transmitting material (sealing material). Specifically, the sealing material is included in the fluorescent part 14 to disperse the fluorescent material to form a light emitting part, or to bond the near ultraviolet semiconductor light emitting element 3, the fluorescent material, and the substrate 2 together. It is adopted for the purpose.

  And as a translucent material used, although a thermoplastic resin, a thermosetting resin, a photocurable resin etc. are normally mentioned, the near-ultraviolet semiconductor light-emitting device 3 has the wavelength of the output light of 360 nm-430 nm. Since it is in the near-ultraviolet region, a resin having sufficient transparency and durability against the output light is preferable as the sealing material. Therefore, specific examples of the sealing material include (meth) acrylic resins such as poly (meth) methyl acrylate; styrene resins such as polystyrene and styrene-acrylonitrile copolymers; polycarbonate resins; polyester resins; phenoxy resins; Resin; Polyvinyl alcohol; Cellulose resins such as ethyl cellulose, cellulose acetate, cellulose acetate butyrate; Epoxy resin; Phenol resin; Silicone resin Further, an inorganic material such as a siloxane bond formed by solidifying a solution obtained by hydrolytic polymerization of a solution containing an inorganic material such as a metal alkoxide, ceramic precursor polymer or metal alkoxide by a sol-gel method, or a combination thereof. The inorganic material and glass which have can also be used.

  Among these, from the viewpoints of heat resistance, ultraviolet resistance (UV) resistance, etc., a solution containing a silicone resin, a metal alkoxide, a ceramic precursor polymer or a metal alkoxide, which is a silicon-containing compound, is hydrolytically polymerized by a sol-gel method. An inorganic material obtained by solidifying the solution or a combination thereof, for example, an inorganic material having a siloxane bond is preferable. In particular, a silicone material or a silicone resin (hereinafter sometimes referred to as “silicone material of the present invention”) having one or more of the following features (1) to (3), preferably all, is preferred.

(1) The solid Si-nuclear magnetic resonance (NMR) spectrum has at least one of the following peaks (i) and / or (ii).
(I) A peak whose peak top is in the region of chemical shift −40 ppm or more and 0 ppm or less, and whose peak half-value width is 0.3 ppm or more and 3.0 ppm or less.
(Ii) A peak whose peak top position is in a region where the chemical shift is −80 ppm or more and less than −40 ppm, and the half width of the peak is 0.3 ppm or more and 5.0 ppm or less.
(2) The silicon content is 20% by weight or more.
(3) The silanol content is 0.01% by weight or more and 10% by weight or less.

Here, as for the silicone-based material as the sealing agent, as described above, those having a silicon content of 20% by weight or more are preferable. The basic skeleton of the conventional silicone-based material is an organic resin such as an epoxy resin having carbon-carbon and carbon-oxygen bonds as the basic skeleton, whereas the basic skeleton of the silicone-based material of the present invention is glass (silicate). It is the same inorganic siloxane bond as glass). This silicone-based material having a siloxane bond has (I) a large bond energy and is difficult to be thermally decomposed or photodegraded, so that it has good light resistance, (II) is slightly electrically polarized, (III) chain The degree of freedom of the structure is large and a flexible structure is possible, and it can freely rotate around the center of the siloxane chain. (IV) High oxidation degree, no further oxidation, (V) High electrical insulation, etc. It has excellent characteristics.

  Because of these characteristics, a silicone-based material formed with a skeleton in which siloxane bonds are three-dimensionally bonded with a high degree of crosslinking is close to an inorganic material such as glass or rock, and becomes a protective film rich in heat resistance and light resistance. Can understand. In particular, a silicone-based material having a methyl group as a substituent has no absorption in the ultraviolet region, so that photolysis hardly occurs and has excellent light resistance.

As described above, the silicon content of the silicone-based material of the present invention is 20% by weight or more, preferably 25% by weight or more, and more preferably 30% by weight or more. On the other hand, the upper limit is usually in the range of 47% by weight or less because the silicon content of the glass composed solely of SiO ₂ is 47% by weight.

  The light-emitting device 8 configured in this way is divided into two divided region portions 12A and 12B divided by the partition 11, and fluorescent portions excited by near-ultraviolet light using four near-ultraviolet semiconductor light-emitting elements 3 as light sources, respectively. 14, and two divided region portions 12 </ b> A and 12 </ b> B are integrally provided in the reflector 10 by arranging the output light output ports, that is, the divided opening portions 13 </ b> A and 13 </ b> B. And the white light which is the output light from each fluorescence part 14A, 14B is radiate | emitted outside from the division | segmentation opening part 13A, 13B, respectively. Here, since each white light emitted from this divided opening is obtained through the fluorescent part 14 including the phosphor, the output light from the near-ultraviolet semiconductor light emitting elements 3A and 3B is sufficiently scattered, and the light distribution Is emitted as Lambertian. As a result, primary light from the three types of phosphors can be synthesized to be white, and uniform white can be obtained. Therefore, uniform white light and illuminance are obtained in the synthesized light emitted from the light emitting device 8. Will be.

Here, the spectrum of white light (hereinafter referred to as “white light A”) output from the divided region portion 12A and white light (hereinafter referred to as “white light B”) output from the divided region portion 12B. Are appropriately selected from the phosphors included in the fluorescent part 14A and the phosphors included in the fluorescent part 14B. If the chromaticity points on the xy chromaticity diagram (CIE1931) corresponding to the white light A and B are represented by W _L and W _H , the correlation between the chromaticity points W _L as shown in FIGS. color temperature 2600K, correlated color temperature of the chromaticity point W _H has a 9000K. Further, the chromaticity point W _L has a deviation duv from a blackbody radiation locus BBL is +0.005, the chromaticity point W _H is the black body radiation locus BBL
The deviation duv from is assumed to be +0.01. FIG. 5 is an enlarged view of the main part of FIG. 4, and the range of deviation from black body radiation −0.02 ≦ duv ≦ 0.02 shown in FIG. 4 is the UCS color system (CIE 1960). To xy chromaticity diagram (CIE1931).

In the above case, the correlated color temperatures of the white light A from the divided area portion 12A and the white light B from the divided area portion 12B are set to be different from each other, and the chromaticity points corresponding to the white lights A and B are black. By keeping the deviation duv from the body radiation locus BBL within −0.02 ≦ duv ≦ 0.02, it can be said that the output light of the light emitting device 8 is substantially along the black body radiation locus BBL, and By controlling the driving conditions such as the light emission time, driving current value, and electric energy of the near ultraviolet semiconductor light emitting elements 3A and 3B provided in the divided region part, the energy ratio can be freely changed for each of the white light A and B. the chromaticity point of which is the final output light of the light emitting device 8 synthesized light, the correlated color temperature corresponding to any chromaticity point on the straight line connecting the above chromaticity point W _L and the chromaticity point W _H Can be adjusted.
That is, in the light emitting device 8, the power supplied to the near ultraviolet semiconductor light emitting elements 3 provided in the corresponding divided region portions 12A and 12B is controlled via the wirings 20A and 20B, respectively. Since the correlated color temperature of the synthesized light, which is the output light, can be adjusted to an arbitrary value between 2600K and 9000K, and the chromaticity point of the synthesized light is substantially along the black body radiation locus BBL, It is possible to provide white light that is very natural to the human eye and to freely change the color temperature from 2600K to 9000K.

Further, in order to output white light as synthesized light in the light emitting device 8, in the above-described embodiments, the near ultraviolet semiconductor light emitting element 3 and the red, green, and blue phosphors are combined, and these are divided into the divided region portions 12. Arranged as shown in FIG. Of course, in order to output white light, other combinations of semiconductor light emitting elements and phosphors may be adopted and arranged in each divided region portion 12. Therefore, if the combination of the near-ultraviolet semiconductor light-emitting element 3 and the red, green, and blue phosphors described above is a combination A, the combination of the blue semiconductor light-emitting element, the red, and the green phosphors is obtained as other combinations that obtain white light. Combination (combination B), combination of blue semiconductor light emitting element and yellow phosphor (combination C)
) Can also be arranged in the divided region portion 12 shown in FIG. Since the technology for outputting white light by the combination B and C is known, detailed description thereof will be omitted.

  Here, in the combinations A, B, and C, FIG. 6 shows the correlation between the color temperature of white light obtained by adjusting the phosphor concentration and the light emission efficiency. The horizontal axis in FIG. 6 represents the color temperature (K), and the vertical axis represents the luminous efficiency (lm / W). The line LA in the figure corresponds to the combination A, the line LB corresponds to the combination B, and the line LC corresponds to the combination C. As can be seen from FIG. 6, among the above three combinations, the slope of the line LA corresponding to the combination A is the smallest, almost horizontal linear state, and the slope of the line LC corresponding to the combination C is the largest. It has become. The greater the slope of each straight line, the greater the variation in the light emission efficiency when trying to change the color temperature.

  Therefore, an increase in the slope of the straight line means that the luminance of the semiconductor light emitting element greatly fluctuates if the power supplied to the semiconductor light emitting element remains constant when the color temperature is changed. In other words, when the inclination of the straight line is relatively large, it is necessary to surely control the power supplied to the semiconductor light emitting element in order to stabilize the luminance. As a result, the overall drive control of the light emitting device 8 is complicated. Is likely to be. Therefore, in order to construct the light emitting device 8 having a stable luminance, a combination with the smallest inclination of the straight line shown in FIG. 6 as much as possible, that is, the combination A of the three-color phosphors corresponding to the near ultraviolet semiconductor light emitting element 3 is used. It is preferable to adopt. However, this does not exclude applying combinations B and C or other combinations of semiconductor light emitting elements and phosphors to the light emitting device 8 according to the present invention.

  Note that whitening in the combinations B and C uses the light of the blue semiconductor light emitting element, which is a phosphor excitation source, as blue light for color mixing, so red, green, or It is necessary to increase the amount of yellow phosphor and reduce the proportion of blue light. Also, since blue light is more efficient than phosphor converted light, the efficiency decreases as the proportion of blue light decreases. On the other hand, when a near-ultraviolet semiconductor light-emitting element is used as in combination A, near-ultraviolet light hardly contributes to whitening and most is used for excitation of the phosphor, and whitening is exclusively converted to blue, green, and red phosphors. It becomes light. Therefore, even if the composition ratio of the phosphor is changed in order to change the color temperature, the luminous efficiency is not greatly affected.

  As described above, according to the light emitting device 8 according to the present embodiment, white light having a color temperature between 2600 K and 9000 K can be easily output, and the structure shown in FIG. By adopting, it is possible to sufficiently suppress the possibility that the combined light of the output light from each divided region portion 12 is separated on the irradiation surface.

  Here, the configuration of the light emitting module 30 configured as described above and configured using a plurality of light emitting devices 8 that can easily output white light having a color temperature between two color temperatures is described with reference to FIG. explain. Fig.7 (a) is a figure which shows the specific structure of the light emitting module 30, and FIG.7 (b) is typical about the arrangement | positioning state of the five light-emitting devices 8 on the light emitting module shown to Fig.7 (a). FIG. Specifically, the light emitting module 30 is similarly annularly arranged on the annular base 31. At this time, as shown in FIG. 7B, the five light emitting devices 8 are equiangularly arranged on the same circumference with the center O of the base 31 as the center point. Accordingly, the angle θ between the adjacent light emitting devices 8 (hereinafter, referred to as “predetermined arrangement angle θ”) is an angle obtained by dividing 360 degrees of one rotation of the center O by 5, which is the number of the light emitting devices 8, that is, 72 degrees. It becomes.

Here, as shown in FIG. 7B, the partition 11 in each light emitting device 8 and the annular radius where the light emitting device 8 is arranged are orthogonal to each other, and the divided region portion 12A is located inside the annular. The five light emitting devices 8 are arranged in the light emitting module 30 so that the divided region portion 12B is positioned outside the annular shape. As a result, in the light emitting module 30, the deviation of the direction of the partition 11 from the adjacent light emitting device 8 is rotated by the predetermined arrangement angle θ in one rotation direction within the opening surface of the opening 13 of the light emitting device 8. Thus, the direction of the partition 11 representing the relative positional relationship between the divided region portion 12A and the divided region portion 12B is different for each light emitting device 8.

  By arranging the five light emitting devices 8 in such a manner that the direction of the partition 11 is shifted by a predetermined arrangement angle, the light emission from the divided region portion 12A and the divided region portion 12B of each light emitting device 8 becomes uneven. Since it is easy to suppress and synthesize | combine, it becomes possible to avoid isolation | separation in the irradiation surface of light emission irradiated as light emission from the light emitting module 30. FIG. In particular, even when a lens element such as a convex lens is provided on the opening 13 of the light emitting device 8, it is possible to avoid separation of light emission.

  Further, in the light emitting module 30, the wirings 20A of the five divided region portions 12A included in each light emitting device 8 are connected in series to form the wiring 34, and the wirings 20B of the five divided region portions 12B are connected in series. Thus, the wiring 35 is formed. Furthermore, the ground line of each light emitting device 8 is also connected to each light emitting device 8 in series to form a wiring 36. In FIG. 8, the state of the five light-emitting devices 8 connected by these wiring 34-36 is shown typically. Electrodes 32 and 33 for supplying electric power for causing each light emitting device 8 to emit light are provided for these wirings 34 to 36. Thus, the light emission control of the light emitting module 30 can be easily performed by connecting the respective divided region portions 12A and 12B of each light emitting device 8 in series.

  FIG. 9 shows an example of a current supplied to each light emitting device 8 for light emission control of the light emitting module 30 as shown in FIG. 9. In particular, FIG. 9A shows each light emitting device 8 via the wiring 34. 9B shows the transition of the current supplied to the near-ultraviolet semiconductor light emitting element 3A arranged in the divided region portion 12A. FIG. 9B shows the change in the divided region portion 12B of each light emitting device 8 through the wiring 35. The transition of the electric current supplied to the near ultraviolet semiconductor light emitting element 3B arrange | positioned is shown. In the present embodiment, a rectangular current is supplied to each near-ultraviolet semiconductor light-emitting element 3, and the amount of current supplied to the near-ultraviolet semiconductor light-emitting element 3A and the near-ultraviolet semiconductor light-emitting element 3B are supplied. The total amount of current is controlled to be constant. In the state shown in FIG. 9, the amount of current supplied to the near ultraviolet semiconductor light emitting element 3A side is 25% of the sum, and the amount of current supplied to the near ultraviolet semiconductor light emitting element 3B side is 75% of the sum. As a result, the ratio between the light emission intensity from the divided region portion 12A of each light emitting device 8 and the light emission intensity from the divided region portion 12B of each light emitting device 8 is 1: 3.

  As described above, the total amount of current supplied to the near ultraviolet semiconductor light emitting element 3A side and current supplied to the near ultraviolet semiconductor light emitting element 3B side is kept constant, while the amount of current supplied to each semiconductor element side is constant. By adjusting the ratio, it is possible to change the ratio of the light emission intensity from the divided region portion 12A and the divided region portion 12B while keeping the light emission intensity as the light emitting module 30 constant. As a result, as shown in FIGS. 4 and 5, the output color of the light emitting module 30 can be adjusted to an arbitrary value between 2600K and 9000K while maintaining the emission intensity constant. Further, as described above, since the chromaticity point of the combined light is substantially along the black body radiation locus BBL, it provides white light that is very close to human vision, and extends from 2600K to 9000K. The color temperature can be freely changed.

  In addition, about the change of the ratio of the emitted light intensity from 12 A of division area parts, and the division area part 12B, you may change in steps and may change continuously. In the former case, the output light of the light emitting module has a plurality of output lights having different correlated color temperatures, and the light emitting module 30 is used by the user selecting an output of one of the correlated color temperatures. In the latter case, the light emitting module 30 is used by selecting an arbitrary ratio so that the user has a desired correlated color temperature.

  Further, drive control other than those described above can be employed for drive control of the near-ultraviolet semiconductor light emitting elements 3A and 3B. For example, the input current may be controlled by supplying power independently for each near-ultraviolet semiconductor element without making the sum of the currents supplied to the near-ultraviolet semiconductor light emitting elements 3A and 3B constant.

<Modification>
Next, based on FIG. 10A-FIG. 10C, the modification of the light emitting module 30 which concerns on this invention is demonstrated. In these drawings, for the sake of simplification of description, description of wiring and the like for supplying power to each light emitting device is omitted. First, in the light emitting module 30 shown in FIG. 10A, two light emitting devices 8 are installed on the base 31. At this time, the base 31 has a rectangular shape, and the two light emitting devices 8 are arranged symmetrically with respect to the longitudinal center line. In FIG. 10A, the light emitting device 8 on the left side and the light emitting device 8 on the right side have each light emitting device 8 so that the relative relationship between the divided region portion 12A and the divided region portion 12B is shifted by 180 degrees. The direction of the partition 11 is adjusted. As a result, in the light emitting module 30 shown in FIG. 10A, the divided region portion 12A of each light emitting device 8 is disposed on the inner side, and the divided region portion 12B of each light emitting device 8 is disposed on the outer side.

  Even in the case where the light emitting module 30 is formed in this way, the output light from each light emitting device 8 is easily synthesized, thereby avoiding separation of light emitted as light emitted from the light emitting module 30 on the irradiation surface. Is possible. In addition, the light emitting module 30 shown in FIG. 10A can also be said to be obtained by arranging two light emitting devices 8 in a ring shape, that is, in a ring shape with an interval of 180 degrees.

  Next, in the light emitting module 30 shown in FIG. 10B, four light emitting devices 8 are installed on the base 31. At this time, the base 31 has a rectangular shape, and the four light emitting devices 8 are arranged in line symmetry so that the distances between the adjacent light emitting devices 8 are equal. Then, when the leftmost light emitting device 8 in FIG. 10A is used as a reference, the relative relationship between the divided region portion 12A and the divided region portion 12B is rotated by 90 degrees and shifted from there. The direction of the partition 11 is adjusted. As a result, in the light emitting module 30 shown in FIG. 10B, the direction of the partition 11 is different in all the light emitting devices 8, and the amount of deviation in the direction of the partition 11 is adjusted to be equal between the adjacent light emitting devices 8. ing. Even in the case where the light emitting module 30 is formed in this way, the output light from each light emitting device 8 is easily synthesized uniformly, thereby avoiding separation of light emitted as light emitted from the light emitting module 30 on the irradiation surface. It becomes possible to do.

  Further, instead of simultaneously arranging four light emitting devices 8 on one base 31 as shown in FIG. 10B, one light emitting device 8 is arranged on one base 31 and adjacent to each other as shown in FIG. 10C. The direction of the partition 11 between the light emitting devices 8 arranged on the base is set to be in a state of being rotated by 90 degrees in the same manner as described above. In this case, the light emitting module 30 is formed including the four bases 31 and the four light emitting devices 8 arranged on them.

1 is a perspective view of a schematic configuration of a semiconductor light emitting device (light emitting device) included in a light emitting module according to an embodiment of the present invention. It is a figure which shows the mounting state of the wiring which supplies electric power to the semiconductor light-emitting device in the package shown to FIG. 1A. It is the figure which modeled the light-emitting device shown to FIG. 1A and 1B using the electrical symbol. It is sectional drawing of the semiconductor light-emitting device shown in FIG. It is a figure which shows the connection relation of the semiconductor light-emitting element and board | substrate in the semiconductor light-emitting device shown in FIG. In the semiconductor light emitting device shown in FIG. 1, it is a figure which shows the relationship between the chromaticity point of the white light set to the output light from each division area part, and a black body radiation locus. FIG. 5 is an enlarged view of a main part of a relationship between a chromaticity point of white light and a black body radiation locus shown in FIG. 4. It is a figure which shows the correlation with the color temperature of output light, and luminous efficiency about the combination of the various semiconductor light-emitting devices and fluorescent substance which can be employ | adopted in the semiconductor light-emitting device shown in FIG. FIG. 7A is a diagram showing a configuration of a light emitting module according to an embodiment of the present invention, and FIG. 7B is a diagram simply showing an arrangement of semiconductor light emitting devices in the light emitting module. It is a figure which shows the state of the wiring for the electric power supply between semiconductor light-emitting devices in the light-emitting module shown in FIG. It is a figure which shows the one aspect | mode of the electric current supplied to the light emitting module shown in FIG.7 and FIG.8. It is a 1st figure which shows the modification of the arrangement state of the semiconductor light-emitting device in the light-emitting module which concerns on the Example of this invention. It is a 2nd figure which shows the modification of the arrangement state of the semiconductor light-emitting device in the light-emitting module which concerns on the Example of this invention. It is a 3rd figure which shows the modification of the arrangement state of the semiconductor light-emitting device in the light-emitting module which concerns on the Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Package 2 ... Substrate 3, 3A, 3B ... Near ultraviolet semiconductor light emitting element 5 ... Eutectic solder 6 ... Wire 8 ... Semiconductor light emitting device (light emission) apparatus)
10... Reflector 11... Partition 12, 12 A, 12 B... Divided region 13... Opening 13 A, 13 B. Fluorescent part 20, 20A, 20B ... Wiring 20C, 20D ... Pair wiring 30 ... Light emitting module 31 ... Base 32, 33 ... Electrode 34, 35, 36 ... ·wiring

Claims (6)

At least a package, a semiconductor light emitting element, and a phosphor. The light emitted from the semiconductor light emitting element and the light emitted from the phosphor excited and fluorescent by the light emission, or excited and fluorescent by the light emission from the semiconductor light emitting element. A light emitting module including a plurality of semiconductor light emitting devices that emit light to the outside by light emission from a phosphor,
The package in each of the semiconductor light emitting devices includes an opening that opens in an emission direction of the semiconductor light emitting device, and a divided opening that is defined by dividing the inside of the package into two or more and is a part of the opening Having at least one divided region portion and another divided region portion that are open,
Each of the one divided region portion and the other divided region portion is
One or more of the semiconductor light emitting elements;
A power supply unit for supplying power to the semiconductor light emitting element;
A fluorescent portion including the phosphor and a translucent material that seals each divided region portion;
Each of the plurality of semiconductor light emitting devices has a relative positional relationship between the one divided region portion and the other divided region portion in the package adjacent to each other when one semiconductor light emitting device is used as a reference. Arranged with respect to the light emitting device at a predetermined angle defined by dividing 360 degrees by the number of the semiconductor light emitting devices provided in the light emitting module in the rotation direction within the opening surface of the opening. To be
Light emitting module. The plurality of semiconductor light emitting devices are annularly arranged and the intervals between the semiconductor light emitting devices are equiangular,
The one divided region portion and the other divided region portion in the package of each of the semiconductor light emitting devices are different from each other in the spectrum of light output from the fluorescent portion, and each of the one divided region portion is annular. Disposed inside the semiconductor light emitting device disposed in
The light emitting module according to claim 1. The plurality of semiconductor light emitting devices are arranged in a straight line and at equal intervals between the semiconductor light emitting devices,
The one divided region portion and the other divided region portion in each of the packages of the semiconductor light emitting device have mutually different spectra of light output from the fluorescent portion,
The light emitting module according to claim 1. The power supply units included in each of the one divided region units are connected in series with each other,
The power supply units included in each of the other divided region units are connected in series with each other and independently of the power supply unit included in each of the one divided region unit.
The light emitting module according to any one of claims 1 to 3. The sum of the current value supplied by the power supply unit included in each of the one divided region unit and the current value supplied by the power supply unit included in each of the other divided region units is controlled to be constant.
The light emitting module according to any one of claims 1 to 4.   An illumination device comprising one or a plurality of light emitting modules according to claim 1.

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