JP2012009533A - Semiconductor light emitting device mounted circuit board, light emitting module, and lighting apparatus - Google Patents

Semiconductor light emitting device mounted circuit board, light emitting module, and lighting apparatus Download PDF

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JP2012009533A
JP2012009533A JP2010142515A JP2010142515A JP2012009533A JP 2012009533 A JP2012009533 A JP 2012009533A JP 2010142515 A JP2010142515 A JP 2010142515A JP 2010142515 A JP2010142515 A JP 2010142515A JP 2012009533 A JP2012009533 A JP 2012009533A
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light emitting
semiconductor light
semiconductor
power supply
downstream
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JP2010142515A
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Japanese (ja)
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Akio Kasakura
Shuji Onaka
修治 大中
暁夫 笠倉
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Mitsubishi Chemicals Corp
三菱化学株式会社
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Abstract

PROBLEM TO BE SOLVED: To provide a technique capable of freely and easily connecting semiconductor light emitting devices with each other in series and in parallel.SOLUTION: Each of a plurality of light emitting part has a semiconductor light emitting element, and emits light having at least two spectrums. In a semiconductor light emitting device mounted circuit board on which a semiconductor light emitting device having a plurality of light emitting parts in which light emitting parts for emitting light having different spectrums are independently controlled, is mounted, a thermally-conductive plate like base material part on which the semiconductor light emitting device is mounted; and a power supplying part formed on the base material part, supplying power to each of the light emitting elements by considering at least one light emitting part among a plurality of light emitting parts as a system different from the system of other light emitting parts emitting light having a spectrum different from that of the one light emitting part, and freely supplying power to other semiconductor light emitting devices electrically connected with each other without semiconductor light emitting elements, are provided.

Description

  The present invention relates to a circuit board mounted with a semiconductor light emitting device, a light emitting module, and a lighting device.
  In recent years, lighting devices using light emitting diodes (LEDs), which are semiconductor light emitting elements, have been widely proposed in place of conventional lighting devices for energy saving and various other purposes. The mainstream as an illuminating device using an LED is an LED chip having a light emission peak wavelength in a wavelength range from ultraviolet to green, and a phosphor that converts radiation from the LED chip into predetermined visible light. A white LED having a phosphor conversion type white light generation system configured is used as a source of white light.
  One of the functions desired for the LED lighting device is a toning function. A white LED in which two white light generation systems having different color temperatures of white light to be generated are contained in one package and a light emitting module using the white LED for the purpose of application to a light source of a lighting device capable of toning It has been proposed (see, for example, Patent Document 1).
JP 2009-231525 A
  In conventional toned LED (Light-emitting Diode) lighting devices, it is common to connect a plurality of semiconductor light-emitting devices in series. Light emission can be easily controlled by connecting a plurality of semiconductor light emitting devices in series. On the other hand, if a plurality of semiconductor light emitting devices can be connected in parallel, complex control of light emission is possible. In addition, in the case of a configuration in which a plurality of semiconductor light emitting devices are connected in series, if one of the plurality of semiconductor light emitting devices becomes unable to emit light due to a failure or a lifetime, all other semiconductor light emitting devices also become unable to emit light and function as lighting devices. There is a concern that it will not. On the other hand, if a plurality of semiconductor light emitting devices are connected in parallel, even if one of the plurality of semiconductor light emitting devices becomes unable to emit light due to a failure or a lifetime, other semiconductor light emitting devices continue. Light can be emitted, and the function as a lighting device can be maintained. As described above, when connecting a plurality of semiconductor light emitting devices to each other, the series connection and the parallel connection have advantages, and the lighting device can be freely changed according to the application. The degree of freedom of design is improved.
  The present invention has been made in view of the above circumstances, and provides a technique using a toned semiconductor light-emitting device that can freely and easily connect the semiconductor light-emitting devices in series connection and parallel connection. Is an issue.
  In the present invention, in order to solve the above-described problems, the arrangement of the power supply unit of the semiconductor light emitting device mounted circuit board for mounting the semiconductor light emitting device including the light emitting unit including the semiconductor light emitting element is devised.
Specifically, the present invention includes a plurality of light emitting units each including a semiconductor light emitting element that output light of at least two spectra, and the light emitting units that output light of different spectra are independently controlled. A semiconductor light emitting device mounting circuit board on which a semiconductor light emitting device having a plurality of light emitting portions is mounted, wherein the semiconductor light emitting device is mounted on a plate-like base material portion made of a heat conductive material, and formed on the base material portion Each of the semiconductor light emitting elements is configured such that at least one light emitting unit among the plurality of light emitting units and another light emitting unit that outputs a spectrum of light different from the spectrum of light output from the one light emitting unit are separated. And a power supply unit that can supply power to another semiconductor light emitting device that is electrically connected without passing through the semiconductor light emitting element.
  In the circuit board (hereinafter also simply referred to as a circuit board) according to the present invention, the power supply unit supplies power to each of the semiconductor light emitting elements with one light emitting unit and another light emitting unit as separate systems. It is possible to supply electric power to other semiconductor light emitting devices that are electrically connected without passing through a semiconductor light emitting element. In the circuit board according to the present invention, the power supplied by the power supply unit is supplied to its own semiconductor light emitting element and also to the semiconductor light emitting element of another semiconductor light emitting device that is electrically connected. The power supply unit is configured to do so. Therefore, according to the circuit board according to the present invention, the semiconductor light emitting devices can be connected not only in series but also in parallel. That is, the connection mode between the semiconductor light emitting devices can be freely changed, and the degree of freedom in design can be increased as compared with the prior art.
  Here, the semiconductor light emitting device mounted on the circuit board according to the present invention outputs light of at least two spectra. Therefore, for example, when there are three or more light emitting units, it is not necessary for all the light emitting units to output light of different spectra, and light of at least two types of spectra is output from the plurality of light emitting units. It only has to be. That is, the plurality of light emitting units may include a light emitting unit that outputs light of the same spectrum. Of the plurality of light emitting units, at least light emitting units that output light having different spectra are controlled independently of each other.
  Each light emitting unit has a semiconductor light emitting element, and the semiconductor light emitting element outputs light in the near ultraviolet region (emission wavelength region of 360 nm to 430 nm), for example, when power is supplied. The light emitting unit may include a phosphor that absorbs part of the light emitted from the semiconductor light emitting element and emits light of a different wavelength. In this case, the semiconductor light emitting element excites the phosphor. A plurality of semiconductor light emitting elements and phosphors may be provided in each light emitting unit. In addition to the semiconductor light emitting element and the phosphor, the light emitting unit may include a translucent material that seals the phosphor. Further, the phosphor and the translucent material may be comprehensively specified as a fluorescent part, and the light emitting part may be specified as including a semiconductor light emitting element and a fluorescent part.
  As described above, the power supply unit supplies power to each of the semiconductor light emitting elements by using one light emitting unit and another light emitting unit as separate systems. One light emitting unit is one of a plurality of light emitting units, and the other light emitting unit is a light emitting unit that outputs light having a spectrum different from the spectrum of light output from one light emitting unit. Further, the power supply unit can supply power to other semiconductor light emitting devices that are electrically connected without passing through the semiconductor light emitting element. The semiconductor light emitting device and other semiconductor light emitting devices have the same configuration. That is, other semiconductor light emitting devices also have a base material part and a power supply part. The ability to supply power to other semiconductor light-emitting devices without going through a semiconductor light-emitting element means that power can be supplied to the semiconductor light-emitting elements, and power can also be supplied to other semiconductor light-emitting devices. It means that it is possible. That is, the power supply unit according to the present invention includes at least two systems, and these two systems are independent from each other, and as a result, the semiconductor light emitting devices can be connected not only in series but also in parallel. is there.
  On the irradiation surface outside the semiconductor light emitting device mounted on the circuit board according to the present invention, the combined light of light having at least two types of spectrum can be made to reach and the color temperature of the combined light can be made variable. it can. Therefore, the circuit board according to the present invention can be particularly suitably used for an illumination device using a toned semiconductor light emitting device.
  In the circuit board according to the present invention, it is preferable that the power supply unit is formed in a planar shape on the base material unit. By forming the power supply portion in a planar shape, heat can be taken from the semiconductor light emitting device more efficiently, and thus the heat dissipation performance in the semiconductor light emitting device can be suitably enhanced. Accordingly, it is possible to suitably suppress the occurrence of a decrease in light emission efficiency and a thermal deterioration accompanying a local temperature increase that is likely to be manifested in a semiconductor light emitting device capable of color matching. In addition, it is preferable to comprise an electric power supply part with a heat conductive material.
  Here, in the circuit board according to the present invention, the power supply unit supplies power to the semiconductor light emitting element of the one light emitting unit and is electrically connected to the semiconductor of one light emitting unit of another semiconductor light emitting device. A first light source unit that can freely supply power to the light emitting element, and a semiconductor light emitting element of another light emitting unit of the other semiconductor light emitting device that supplies power to and electrically connects to the semiconductor light emitting element of the other light emitting unit. A second system part capable of supplying electric power, and the first system part is an upstream part of the first system located upstream of the semiconductor light emitting element of the one light emitting part, and is electrically connected A first system upstream portion connectable to a first system upstream portion of another semiconductor light emitting device, and a first system downstream portion located downstream of the semiconductor light emitting element of the one light emitting portion, Connectable to the downstream of the first system of other semiconductor light emitting devices connected to the The second system part is an upstream part of the second system located on the upstream side of the semiconductor light emitting element of the other light emitting part, and is electrically connected to another semiconductor light emitting device. A second system upstream part connectable to the second system upstream part of the device, and a second system downstream part located downstream of the semiconductor light emitting element of the other light emitting part, and other electrically connected parts A second downstream portion of the semiconductor light emitting device and a second downstream portion of the semiconductor light emitting device, wherein the circuit board mounted with the semiconductor light emitting device includes the first system upstream portion, the first system downstream portion, and the second system upstream portion. It is good also as a structure further provided with the insulation part which insulates and partitions a part and said 2nd system | strain downstream part mutually.
  The current before passing through the semiconductor light emitting element of one light emitting portion flows through the upstream portion of the first system. The current after passing through the semiconductor light emitting element of one light emitting portion flows through the downstream portion of the first system. The first system upstream portion is freely connectable to the first system upstream portion of another semiconductor light emitting device that is electrically connected, and the first system downstream portion is another semiconductor light emitting device that is electrically connected. It can be connected to the downstream part of the first system. In addition, the current before passing through the semiconductor light emitting element of the other light emitting part flows in the second system upstream part, and the current after passing through the semiconductor light emitting element of the other light emitting part flows in the downstream part of the second system. Flowing. The second system upstream portion is freely connectable to the second system upstream portion of another semiconductor light emitting device that is electrically connected, and the second system downstream portion is another semiconductor light emitting device that is electrically connected. It can be freely connected to the downstream part of the second system. In the present invention, the power supply unit is configured by four systems as described above, so that the semiconductor light emitting devices can be connected not only in series but also in parallel.
  Further, in the circuit board according to the present invention, a heat radiating housing member is attached to the base portion so as to be in thermal contact with the non-mounting surface on which the semiconductor light emitting device is not mounted. You may make it the heat | fever from the semiconductor light-emitting device transmitted to a base material part be thermally radiated in air | atmosphere from the housing member for heat dissipation. As a result, heat conducted sequentially from the semiconductor light emitting device by the power supply unit and the base material unit included in the circuit board is released from the heat dissipation housing member into the atmosphere, so that the semiconductor light emitting device can supply the power supply unit. Heat transfer will be further promoted. Therefore, the heat dissipation performance in the semiconductor light emitting device can be improved more suitably.
Moreover, this invention can also be specified as a light emitting module provided with the circuit board mentioned above. Specifically, the light emitting module according to the present invention includes a plurality of light emitting units each including a semiconductor light emitting element and outputting light of at least two spectra, and the light emitting units outputting light of different spectra are independent of each other. A semiconductor light-emitting device having a plurality of light-emitting portions controlled in this manner, and a semiconductor light-emitting device-mounted circuit board on which the semiconductor light-emitting device is mounted, the semiconductor light-emitting device-mounted circuit board mounting the semiconductor light-emitting device A plate-like base material portion made of a heat conductive material;
The semiconductor light emitting device is formed on the base material portion, and the semiconductor light emitting device includes at least one light emitting portion among the plurality of light emitting portions and another light emitting portion that outputs a light emission spectrum different from a spectrum output from the one light emitting portion as separate systems. A power supply unit that supplies power to each of the elements and can supply power to other semiconductor light emitting devices that are electrically connected without passing through the semiconductor light emitting element.
  Further, in the light emitting module according to the present invention, the power supply unit is formed in a planar shape as a power supply circuit on the base material unit, and the circuit in the semiconductor light emitting device is formed on a different surface from the power supply circuit. The wiring of the power supply circuit and the wiring of the circuit in the semiconductor device can be configured to cross three-dimensionally. The power supply circuit includes a power supply system that supplies power to each of the semiconductor light emitting elements, with one light emitting unit and another light emitting unit as separate systems, and the semiconductor with respect to another semiconductor light emitting device that is electrically connected. A power supply system that can supply power without using a light emitting element is included. The circuit in the semiconductor device is a circuit through which electric power supplied to the semiconductor light emitting device in the semiconductor device flows. In the light emitting module according to the present invention, a plurality of independent power systems can be formed in the semiconductor light emitting device mounting circuit by three-dimensionally intersecting the wiring of the power supply circuit and the wiring of the circuit in the semiconductor device. . As a result, the light emitting modules can be connected not only in series but also in parallel.
  Note that the light emitting unit may include a phosphor, and a plurality of semiconductor light emitting elements and phosphors may be provided in each light emitting unit. The light emitting unit may further include a light transmissive material.
  In the light emitting module according to the present invention, the color temperature of the one light emitting unit and the other light emitting unit may be different by 2000K or more, and the color temperature of the mixed white light output from the light emitting module may be variable. it can. By setting the variable range of the correlated color temperature to 2000K or more, for example, sufficient toning can be performed when changing the room atmosphere.
  Here, in the circuit board according to the present invention, the semiconductor light emitting device further includes a package having a divided region portion that is divided into two or more inside, and each light emitting portion is provided in each divided region portion in the package. It is good also as a structure provided. Further, in the circuit board according to the present invention, the package is divided into an opening that opens in the emission direction of the semiconductor light emitting device, and an inside of the package that is divided into two or more and is a part of the opening It can be set as the structure which has at least 2 or more said division area part opened in an opening part. The semiconductor light emitting device mounted on the circuit board according to the present invention has at least one divided region portion and another divided portion inside the package so that an opening for emitting output light from the device is divided into two or more. A region portion is defined. The opening portions in these divided region portions are defined as the divided opening portions, and the divided opening portions occupy a part of the opening portions of the semiconductor light emitting device main body. Each divided region portion includes a light emitting portion including a semiconductor light emitting element and a fluorescent portion. Then, for example, the output light from each semiconductor light emitting element excites and fluoresces the phosphor, and then goes through the translucent material together with the light emitted from the phosphor, and reaches the outside from the divided opening of the corresponding divided region.
  Moreover, this invention can also be specified as an illuminating device provided with the said light emitting module. Note that a plurality of modules may be provided in the lighting device. In addition, the present invention includes a plurality of the light emitting modules described above, and further, the plurality of light emitting modules are connected in any one of a series connection, a parallel connection, and a connection using a combination of a series connection and a parallel connection. It can also identify as an illuminating device provided with the cable connected in an aspect, and the base board which mounts the said several light emitting module.
According to the present invention, in a technique using a semiconductor light emitting device capable of color matching, it is possible to provide a technique capable of freely and easily connecting the semiconductor light emitting devices to a series connection and a parallel connection.
The perspective view of schematic structure of the package in the semiconductor light-emitting device which comprises the light emitting module which concerns on 1st embodiment is shown. The mounting state of the wiring which supplies electric power to the semiconductor light emitting element shown to FIG. 1A is shown. 1A and 1B are diagrams schematically illustrating the semiconductor light emitting device illustrated in FIGS. 1A and 1B using electrical symbols. FIG. 3 shows a cross-sectional view of the semiconductor light emitting device shown in FIG. 2. The top view of the circuit board concerning a first embodiment is shown. The top view of the circuit board with which the semiconductor light-emitting device is mounted is shown. AA sectional drawing of FIG. 5 is shown. The state which connected the circuit board which concerns on 1st embodiment in parallel, and a mode that an electric current flows are shown. The state which connected the circuit board which concerns on 1st embodiment in series, and a mode that an electric current flows are shown. An example of the current supplied to each light emitting device for light emission control of the light emitting module is shown. An example of the illuminating device using a light emitting module is shown. The light emitting module which concerns on the modification 1 is shown. The light emitting module which concerns on the modification 2 is shown. The light emitting module which concerns on the modification 3 is shown. The light emitting module which concerns on the modification 4 is shown. 10 shows a semiconductor light emitting device according to Modification 5. 10 shows a semiconductor light emitting device according to Modification 6. The schematic structure of the light emitting module with a connector which concerns on 2nd embodiment is shown. The base board which concerns on 2nd embodiment is shown. The cable connector which concerns on 2nd embodiment is shown. The lens which concerns on 2nd embodiment is shown. The light emitting module with a connector which concerns on 2nd embodiment is shown. The mode that the light emitting module with a connector which concerns on 2nd embodiment was connected in parallel linearly is shown. The mode that the light emitting module with a connector which concerns on 2nd embodiment was connected to planar shape is shown.
  DETAILED DESCRIPTION Exemplary embodiments for carrying out the present invention will be described in detail below with reference to the drawings. Note that the dimensions, materials, shapes, relative arrangements, and the like of the components described in this embodiment are intended to limit the technical scope of the invention to those unless otherwise specified. is not.
<First embodiment>
[Semiconductor light-emitting device]
Here, FIG. 1A is a perspective view of a schematic configuration of the package 1 in the semiconductor light emitting device (hereinafter also simply referred to as a light emitting device) 8 constituting the light emitting module 30 according to the first embodiment, and FIG. The mounting state of the wirings 20A and 20B for supplying power to the near ultraviolet semiconductor light emitting elements 3A and 3B provided in the package 1 is shown. FIG. 2 is a diagram schematically showing the semiconductor light emitting device 8 shown in FIGS. 1A and 1B using electrical symbols. 3 is a cross-sectional view of the semiconductor light emitting device 8 shown in FIG. 1A when cut along a plane including the wirings 20A and 20B. In addition, the light emitting module 30 in 1st embodiment is comprised including the semiconductor light-emitting device 8 and the circuit board for mounting this.
  As shown in FIG. 1A, the semiconductor light emitting device 8 includes a package 1, and the package 1 has an annular and truncated cone-shaped reflector 10 disposed on a base 2. The reflector 10 has a function of guiding a part of output light from each divided region portion 12 described later in the emission direction of the semiconductor light emitting device 8 and also functions as a main body of the package 1. In addition, the upper surface side of the truncated cone shape of the reflector 10 is a light emitting direction of the semiconductor light emitting device 8 and forms an opening 13. On the other hand, the base 2 is disposed on the lower surface side of the truncated cone shape of the reflector 10, and wiring for supplying power to each semiconductor light emitting element is laid down as will be described in detail later (the wiring is shown in FIG. 1A). Is not shown).
  And the partition 11 which divides | segments the space inside this cyclic | annular reflector 10 equally into two area | regions as shown in FIG. The partition 11 defines two divided region portions 12A and 12B in the reflector 10, and the opening portion of the divided region portion 12A occupies the right half of the opening portion 13 of the reflector 10, and the opening of the divided region portion 12B. The part occupies the left half of the opening 13 of the reflector 10. In this specification, the opening of the divided region 12A is referred to as a divided opening 13A, and the opening of the divided region 12B is referred to as a divided opening 13B. That is, the opening 13 is divided into the divided openings 13A and 13B by the partition 11.
  Each of the divided region portions 12A and 12B is provided with four near-ultraviolet semiconductor light-emitting elements 3A and 3B each of which is a semiconductor light-emitting element and outputs near-ultraviolet light as output light. The near-ultraviolet semiconductor light-emitting elements 3A and 3B and the fluorescent part 14 described later constitute a light-emitting part of the present invention. Near-ultraviolet semiconductor light-emitting elements 3A and 3B (when these near-ultraviolet semiconductor light-emitting elements are referred to generically, they are referred to as near-ultraviolet semiconductor light-emitting elements 3). Are connected to each other and emits light by receiving power supply. In addition, as shown in FIG. 1B, the connection of the near-ultraviolet semiconductor light-emitting element 3 to the wiring 20 in each divided region portion includes four near-ultraviolet semiconductor light-emitting elements 3A mounted on the wiring 20A. Four near-ultraviolet semiconductor light emitting elements 3B are mounted thereon. The four near-ultraviolet semiconductor light emitting elements 3 in each divided region are connected in parallel in the forward direction to the corresponding wiring. Note that reference numerals 21A1, 21A2, 21B1, and 21B2 in FIG. 1B represent electrodes that electrically connect the semiconductor light emitting device 8 and the circuit board. The electrodes 21A1, 21A2, 21B1, and 21B2 are formed on the lower surface of the base 2 (the surface on the side where the reflector 10 is not disposed), and are connected to the wirings 20A and 20B, respectively. Specifically, the electrode 21A1 is connected to the terminal 20A1 at one end of the wiring 20A, and the electrode 21A2 is connected to the terminal 20A2 at the other end of the wiring 20A. The electrode 21B1 is connected to the terminal 20B1 at one end of the wiring 20B, and the electrode 21B2 is connected to the terminal 20B2 at the other end of the wiring 20B. In the example here, each of the divided region portions 12A and 12B is provided with four near-ultraviolet semiconductor light-emitting elements 3A and 3B, but the number of semiconductor light-emitting elements provided on both may be different. In addition, it is only necessary that at least one semiconductor light emitting element is provided in each of the divided region portions 12A and 12B.
The mounting state of the near ultraviolet semiconductor light emitting elements 3A and 3B is schematically shown in FIG. That is, power is supplied from the wiring 20A to the four near-ultraviolet semiconductor light emitting elements 3A arranged in the divided region portion 12A through the electrodes 21A1 and 21A2. Power is supplied from the wiring 20B to the four near-ultraviolet semiconductor light emitting elements 3B arranged in the divided region portion 12B through the electrodes 21B1 and 21B2. Each of the electrodes 21A1 and 21A2 has a quadrangular shape in plan view, and is provided along one side of the four sides forming the quadrangular base 2 and at the corners present at both ends of the one side. One side is a side on the divided region 12A side parallel to the straight line portion of the wiring 20A. Further, the electrodes 21B1 and 21B2 are also quadrangular in plan view, like the electrodes 21A1 and 21A2. And it is provided in the corner part which exists along the other side facing the said one side among the four sides which form the square base 2, and exists in the both ends of this other side. The other side is a side on the divided region 12B side parallel to the straight line portion of the wiring 20B. Since the electrodes 21A1, 21A2, 21B1, and 21B2 have a predetermined height, a gap is formed between the semiconductor light emitting device 8 and the circuit board, and the semiconductor light emitting device 8 and the circuit board are electrically connected. (See FIG. 5). That is, the wirings 20A and 20B of the semiconductor light emitting device 8 and the wiring (power supply conductor layer 32) on the circuit board 31 are formed on different planes, and the wirings 20A and 20B of the semiconductor light emitting device 8 and the circuit board 31 are formed. A three-dimensional connection with the wiring (the power supply conductor layer 32) is realized. The details of the three-dimensional connection between the wirings 20A and 20B of the semiconductor light emitting device 8 and the wiring on the circuit board 31 (the power supply conductor layer 32) will be described later. In addition, the voltage applied to the near ultraviolet semiconductor light emitting element 3 is in the range of 3.3 V to 3.9 V, and the supply current is in the range of 40 mA to 200 mA. This power supply may be performed in consideration of the light emission intensity of the entire light emitting module 30.
  Next, the fluorescent part 14 will be described. The semiconductor light emitting device 8 according to the first embodiment is intended to output white light, for example, and employs, for example, three kinds of phosphors of a red phosphor, a green phosphor, and a blue phosphor. Further, these red, green, and blue phosphors may be used in appropriate combination according to a desired emission spectrum, color temperature, chromaticity coordinates, color rendering properties, luminous efficiency, and the like. In addition, in order to output white light as synthetic light in the semiconductor light emitting device 8, a combination other than the combination of the near ultraviolet LED 3 and red, green, and blue phosphors may be employed. For example, a combination of a blue semiconductor light emitting element and red and green phosphors, a combination of a blue semiconductor light emitting element and yellow phosphor, or the like may be employed. In the semiconductor light emitting device 8, the driving power to the semiconductor light emitting element 3A and the driving power to the semiconductor light emitting element 3B are controlled independently, so that light of different spectra from the fluorescent part 14A and the fluorescent part 14B. Can be output. Further, by arranging the fluorescent part 14A and the fluorescent part 14B close to each other, the output light output from the fluorescent part 14A and the output light output from the fluorescent part 14B are mixed with each other, so that a desired color is obtained. Synthetic light of temperature can be obtained.
  Specific examples of phosphors that can be used by mixing in the wavelength conversion layer are listed below.
As the red phosphor, (Mg, Ca, Sr, Ba) AlSiN 3 : Eu, (Mg, Ca
, Sr, Ba) 2 (Si, Al) 5 N 8 : Eu, (Mg, Ca, Sr, Ba) AlSi (N, O) 3 : Eu, Eu-activated α sialon, SrAlSi 4 N 7 : Eu, ( Sr, Ba, Ca) 3 SiO 5 : Eu, K 2 SiF 6 : Mn, K 2 TiF 6 : Mn, and the like.
As the green phosphor, (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu, Eu-activated β sialon, (Ba, Sr, Ca) 3 Si 6 O 12 N 2 : Eu, Ca 3 (ScMg) 5 O 12 : Ce, C
aSc 2 O 4 : Ce, BaMgAl 10 O 17 : Eu, Mn and the like.
As the blue phosphor, BaMgAl 10 O 17 : Eu, (Sr, Ba, Ca) 5 (PO 4 ) 3
Cl: Eu etc. are mentioned.
Examples of yellow phosphors include Eu, such as oxynitride phosphors having a SiAlON structure such as YAG: Ce, TAG: Ce, La3Si6N11: Ce, and Cax (Si, Al) 12 (O, N) 16: Eu. Examples include activated phosphors.
In the semiconductor light emitting device 8, the near-ultraviolet semiconductor light-emitting element 3 and the fluorescent portion 14 are usually arranged so that the phosphor is excited by the light emission of the near-ultraviolet semiconductor light-emitting element 3 to emit light, and the emitted light is extracted outside. Is done. When having such a structure, the near-ultraviolet semiconductor light-emitting element 3 and the phosphor 14 are usually sealed and protected with a light-transmitting material (sealing material). Specifically, the sealing material is included in the fluorescent portion 14 so that the phosphor is dispersed to form a light emitting portion, or the near ultraviolet semiconductor light emitting element 3, the phosphor and the base 2 are bonded. Adopted.
  As the translucent material to be used, a thermoplastic resin, a thermosetting resin, a photocurable resin, and the like are usually used. The near-ultraviolet semiconductor light-emitting element 3 has a near-ultraviolet light whose output light wavelength is 360 nm to 430 nm. Since it is in the region, a resin having sufficient transparency and durability against the output light is preferable as the sealing material. Therefore, specific examples of the sealing material include (meth) acrylic resins such as poly (meth) methyl acrylate; styrene resins such as polystyrene and styrene-acrylonitrile copolymers; polycarbonate resins; polyester resins; phenoxy resins; Resin; Polyvinyl alcohol; Cellulose resins such as ethyl cellulose, cellulose acetate, cellulose acetate butyrate; Epoxy resin; Phenol resin; Silicone resin Further, an inorganic material such as a siloxane bond formed by solidifying a solution obtained by hydrolytic polymerization of a solution containing an inorganic material such as a metal alkoxide, ceramic precursor polymer or metal alkoxide by a sol-gel method, or a combination thereof. The inorganic material and glass which have can also be used.
  The semiconductor light-emitting device 8 configured in this way has fluorescence excited by near-ultraviolet light using four near-ultraviolet semiconductor light-emitting elements 3 as light sources in the two divided region portions 12A and 12B divided by the partition 11, respectively. A part 14 is provided, and two divided region parts 12A and 12B are integrally provided in the reflector 10 with the output light exits, that is, the divided openings 13A and 13B arranged side by side. And the white light which is the output light from each fluorescence part 14A, 14B is radiate | emitted outside from the division | segmentation opening part 13A, 13B, respectively. Here, since each white light emitted from this divided opening is obtained through the fluorescent part 14 including the phosphor, the output light from the near-ultraviolet semiconductor light emitting elements 3A and 3B is sufficiently scattered, and the light distribution Is emitted as Lambertian. As a result, the primary light from the phosphor can be synthesized to be white, and uniform white can be obtained. Therefore, uniform white light and illuminance can be obtained in the synthesized light emitted from the semiconductor light emitting device 8. become. Note that the spectra of white light (hereinafter referred to as “white light A”) output from the divided region portion 12A and white light (hereinafter referred to as “white light B”) output from the divided region portion 12B are as follows. The phosphor contained in the fluorescent part 14A and the phosphor contained in the fluorescent part 14B are appropriately selected so as to be different from each other.
[Circuit board]
Next, a semiconductor light emitting device mounting circuit board (hereinafter also simply referred to as a circuit board) 31 on which the above-described semiconductor light emitting device 8 is mounted will be described. 4 shows a plan view of the circuit board 31 according to the first embodiment, and FIG. 5 shows a plan view of the circuit board 31 (light emitting module 30) on which the semiconductor light emitting device 8 is mounted. FIG. 6 is a cross-sectional view taken along the line AA in FIG. In the first embodiment, the semiconductor light emitting device 8 and the circuit board 31 are electrically connected via electrodes (21A1, 21A2, 21B1, 21B2) with a gap therebetween. In other words, the wiring on the semiconductor light emitting device 8 and the wiring on the circuit board 31 (the power supply conductor layer 32) are formed on different planes, and are electrically connected via the electrodes (21A1, 21A2, 21B1, 21B2). It is connected to the. As a result, the semiconductor light emitting device 8 and the circuit board 31 are three-dimensionally arranged, and the wiring on the semiconductor light emitting device 8 and the wiring on the circuit board 31 (the power supply conductor layer 32) are in contact with each other. It is possible to cross three-dimensionally without straddling. Details will be described below.
The circuit board 31 mounts (mounts) the semiconductor light emitting device 8. The circuit board 31 may be mounted with the semiconductor light emitting device 8 according to Modifications 5 and 6 to be described later instead of the semiconductor light emitting device 8. The circuit board 31 according to the first embodiment includes a base material portion 36 that serves as a base for mounting the semiconductor light emitting device 8 (see FIG. 6). This base material part 36 is formed using the heat conductive material excellent in heat conductivity, and planar view is square in 1st embodiment. In 1st embodiment, although the base material part 36 is comprised using aluminum, it is not limited to this. An insulating layer 36 </ b> A is formed on the surface of the base material portion 36. The insulating layer 36A can be made of, for example, a resin composition that uses a thermoplastic resin or a thermosetting resin as a base resin. As the base resin, examples of the thermosetting resin include phenol resin, epoxy resin, and polyimide resin. Further, as the thermoplastic resin, those having high heat resistance described later are preferable. For example, polyether ether ketone (PEEK), polyether ketone (PEK), polyphenylene sulfide (PPS), polyether sulfone (PES), polyphenylene. Examples include ether (PPE), polyamideimide (PAI), polyetherimide (PEI), polyphenylsulfone (PPSU), and liquid crystal polymer (LCP).
  On the insulating layer 36 </ b> A, a power supply conductor layer 32 is formed so as to cover almost the entire surface of the base material portion 36. For example, a copper foil having excellent electrical conductivity is used for the power supply conductor layer 32 in the first embodiment, but other electrical conductive materials can also be used. In the first embodiment, the power control system for supplying to the near ultraviolet semiconductor light emitting element 3 included in each divided region section 12 is roughly divided into two systems, a first system and a brother system. Of the two systems, 32A corresponding to the power control system (first system) to the near-ultraviolet semiconductor light emitting element 3A in the divided region portion 12A is referred to as a “first system power supply conductor layer”, and the near-ultraviolet in the divided region portion 12B. 32B corresponding to the power control system (two younger systems) for the semiconductor light emitting element 3B is defined as a “second system power supply conductor layer”.
  The first system power supply conductor layer 32A includes the upstream first system power supply conductor layer 32A1 located upstream of the near ultraviolet semiconductor light emitting element 3A in the divided region portion 12A and the near ultraviolet semiconductor light emission in the divided region portion 12A. And a downstream first system power supply conductor layer 32A2 located downstream of the element 3A. The upstream and downstream are for the flow of electricity. The upstream first system power supply conductor layer 32A1 corresponds to the upstream section of the first system of the present invention, and can be electrically connected to another semiconductor light emitting device 8 or a power supply source (not shown) on the upper side. It is connected to a connection terminal 39A1 (hereinafter, the connection terminal 39A1 and the connection terminal 39A2 are also collectively referred to as a connection terminal 39A), connected to the electrode 21A1 near the center, and connected to another semiconductor light emitting device on the lower side opposite to the upper side. It is connected to a flexible connection terminal 39B1 (hereinafter, the connection terminal 39B1 and the connection terminal 39B2 are collectively referred to as a connection terminal 39B). Further, the downstream first system power supply conductor layer 32A2 corresponds to the downstream portion of the first system of the present invention, and on the upper side, a connection terminal 39C1 (hereinafter referred to as “electrically connected” to other semiconductor light emitting devices or power supply sources). The connection terminal 39C1 and the connection terminal 39C2 are collectively referred to as a connection terminal 39C), connected to the electrode 21A2 near the center, and further connected to other semiconductor light emitting devices on the lower side (hereinafter referred to as a connection terminal 39D1). The connection terminal 39D1 and the connection terminal 39D2 are collectively referred to as a connection terminal 39D).
  The second system power supply conductor layer 32B includes an upstream second system power supply conductor layer 32B1 located upstream of the near ultraviolet semiconductor light emitting element 3B in the divided region portion 12B and a near ultraviolet light in the divided region portion 12B. A downstream second power supply conductor layer 32B2 located downstream of the semiconductor light emitting element 3B. The upstream second system power supply conductor layer 32B1 corresponds to the upstream part of the second system of the present invention, and is connected to the connection terminal 39A2 that can be electrically connected to other semiconductor light emitting devices on the upper side, and is electroded near the center. 21B1 is connected to a connection terminal 39B2 which can be connected to another semiconductor light emitting device on the lower side. The downstream second system power supply conductor layer 32B2 corresponds to the downstream part of the second system of the present invention, and is connected to the connection terminal 39C2 that is electrically connectable to other semiconductor light emitting devices or power supply sources on the upper side. In the vicinity of the center, it is connected to the electrode 21B2, and further connected to a connection terminal 39D2 that can be connected to other semiconductor light emitting devices on the lower side.
In the first embodiment, electrodes (21A1, 21A2, 21B1, 21B2) are provided on the circuit board 31 (on the power supply conductor layer 32), and the electrodes (21A1, 21A2, 21B) are provided.
1, 21 B 2), the circuit of the semiconductor light emitting device 8 is electrically connected. That is, the circuit of the power supply conductor layer 32 and the semiconductor light emitting device 8 are formed on different planes, and the wiring of the circuit of the semiconductor light emitting device 8 and the power supply conductor layer 32 do not come into contact with each other. Can be crossed. As a result, for example, the current flowing through the first system power supply conductor layer 32A1 can also flow to the other semiconductor light emitting devices 8 via the near ultraviolet semiconductor light emitting element 3A and the connection terminal 39B1 in the divided region portion 12A. is there. In addition, for the other power supply conductor layers, the two connection terminals and the electrodes of the near-ultraviolet semiconductor light-emitting element are connected. Therefore, in the first embodiment, the semiconductor light emitting devices 8 can be connected in parallel or in series by appropriately changing the connection mode of the adjacent semiconductor light emitting devices 8. Details of the connection mode will be described later.
  The power supply conductor layers 32A1, 32A2, 32B1, and 32B2 of different systems are insulated from each other by the insulating member 33. Specifically, the central insulating member 33A is provided in a straight line so as to cut through the center of the circuit board 31, and the upstream first system power supply conductor layer 32A1 and the downstream first system power supply conductor layer 32A2. And insulate. The upstream insulating member 33B insulates the upstream first system power supply conductor layer 32A1 from the upstream second system power supply conductor layer 32B1. The upstream insulating member 33B extends from the connection terminal 39A toward the connection terminal 39B so that the upstream second system power supply conductor layer 32B1 can be connected to the electrode 21B1 provided near the center of the circuit board 31. The straight line is refracted in an inverted C shape near the center. The downstream insulating member 33C insulates the downstream first system power supply conductor layer 32A2 from the downstream second system power supply conductor layer 32B2. The downstream insulating member 33C extends from the connection terminal 39C toward the connection terminal 39D so that the downstream second system power supply conductor layer 32B2 can be connected to the electrode 21B2 provided near the center of the circuit board 31. The straight line is refracted in a C shape near the center. As described above, the power supply conductor layers 32A1, 32A2, 32B1, and 32B2 are insulated from each other by the insulating member 33 in the same plane. However, the power supply conductor layer 32 is connected to the circuit of the semiconductor light emitting device 8 located on a different plane from the power supply conductor layer 32 via the electrodes 21A1, 21A2, 21B1, and 21B2. That is, the power supply conductor layer 32A1 and the power supply conductor layer 32A2 are insulated from each other on the same plane, but are electrically connected by the circuits of the electrodes 21A1 and 2A2 and the semiconductor light emitting device 8. The power supply conductor layer 32B1 and the power supply conductor layer 32B2 are insulated from each other in the same plane, but are electrically connected by the circuits of the electrodes 21B1 and 21B2 and the semiconductor light emitting device 8.
  As shown in FIG. 6, an electrical insulating protective coating layer 37 (a solder resist as an example) is further laminated on the power supply conductor layer 32 formed on the base portion 36. The power supply conductor layer 32 is covered with this electrically insulating protective coating layer 37 except for a specific portion. Each connection terminal (for example, connection terminal 39A1) and each electrode (for example, electrode 21A1) correspond to the specific part. In addition to the above, the specific portion corresponds to a portion where power control electronic components (not shown) such as a Zener diode provided for preventing backflow of electricity are arranged. However, such power control electronic components are not necessarily installed on the circuit board 31 and may be installed outside the circuit board 31. Further, the power control electronic component may be disposed inside the semiconductor light emitting device 8.
[Connection mode]
Next, the connection aspect of the light emitting module 30 mentioned above is demonstrated. FIG. 7 shows a state in which the light emitting modules 30 according to the first embodiment are connected in parallel and a state in which a current flows. FIG. 8 shows a state in which the light emitting modules 30 according to the first embodiment are connected in series and a current flows. Show the state. 7 and 8 indicate the flow of electricity according to the first system (the power control system to the near-ultraviolet semiconductor light-emitting element 3A in the divided region portion 12A). The current flowing through the covered power supply conductor layer 32 is indicated by a dotted line). Moreover, the dotted line in FIG. 7, FIG. 8 shows the flow of the electricity which concerns on a 2nd system | strain (power control system | strain to the near ultraviolet semiconductor light-emitting device 3B in the division area | region part 12B). In FIGS. 7 and 8, the current flow is indicated by a line, but actually the power supply conductor layer 32 flows in a planar shape.
  As shown in FIG. 7, in the parallel connection, the light emitting modules 30 are connected via a cable so that the near ultraviolet semiconductor light emitting elements 3A and 3B of the adjacent semiconductor light emitting devices 8 are connected in parallel. Specifically, the connection terminal 39B1 provided on the lower side of the upstream first system power supply conductor layer 32A1 is the upstream first system of the adjacent light emitting module 30 (the light emitting module positioned on the lower side in FIG. 7). It is connected to a connection terminal 39A1 provided on the upper side of the power supply conductor layer 32A1. The connection terminal 39B2 provided on the lower side of the upstream second system power supply conductor layer 32B1 is connected to the connection terminal 39A2 provided on the upper side of the upstream second system power supply conductor layer 32B1 of the adjacent light emitting module 30. Connected to. The connection terminal 39D1 provided on the lower side of the downstream first system power supply conductor layer 32A2 is connected to the connection terminal 39C1 provided on the upper side of the downstream first system power supply conductor layer 32A2 of the adjacent light emitting module 30. Connected to. The connection terminal 39D2 provided on the lower side of the downstream second system power supply conductor layer 32B2 is connected to the connection terminal 39C2 provided on the upper side of the downstream second system power supply conductor layer 32B2 of the adjacent light emitting module 30. Connected. Parallel connection is realized by connecting the light emitting modules 30 as described above.
  The flow of electricity in the parallel connection shown in FIG. 7 is as follows. The first system is further divided into two systems: a system that flows through the near ultraviolet semiconductor light emitting element 3A and a system that flows to the downstream semiconductor light emitting device 8 without flowing through the near ultraviolet semiconductor light emitting element 3A. In the system flowing through the near ultraviolet semiconductor light emitting element 3A, electricity is input through the connection terminal 39A1 of the upstream semiconductor light emitting device 8, and the input electricity is the upstream first system power supply conductor layer 32A1, the electrode 21A1, and the wiring. 20A (not shown in FIG. 7), the near-ultraviolet semiconductor light-emitting element 3A, the electrode 21A2, and the downstream first system power supply conductor layer 32A2 are output from the connection terminal 39C1. That is, between the electrode 21A1 and the electrode 21A2, the current flows in a different plane from the power supply conductor layer 32. In the system that flows to the downstream semiconductor light emitting device 8 without flowing through the near-ultraviolet semiconductor light emitting element 3A, the electricity input through the connection terminal 39A1 of the upstream semiconductor light emitting device 8 is used for the upstream first system power supply. The signal passes through the conductor layer 32A1 and is output from the connection terminal 39B1. That is, the system flowing through the near ultraviolet semiconductor light emitting element 3A and the system flowing to the downstream semiconductor light emitting device 8 without flowing through the near ultraviolet semiconductor light emitting element 3A intersect three-dimensionally.
  The electricity output from the connection terminal 39B1 is input to the connection terminal 39A1 of the downstream semiconductor light emitting device 8 via the cable, and the upstream first system power supply conductor of the downstream semiconductor light emitting device 8 is connected. The light is output from the connection terminal 39C1 through the layer 32A1, the electrode 21A1, the wiring 20A (not shown in FIG. 7), the near-ultraviolet semiconductor light emitting element 3A, the electrode 21A2, and the downstream first system power supply conductor layer 32A2. Electricity output from the connection terminal 39C2 of the downstream semiconductor light emitting device 8 is input to the connection terminal 39D1 of the upstream semiconductor light emitting device 8 via the cable, and the downstream first system power supply conductor layer 32A2 is passed through. And output from the connection terminal 39C1. The current flowing through the downstream first system power supply conductor layer 32A2 and the current flowing through the near-ultraviolet semiconductor light emitting element 3A in the first system have mutually different planes of flow. That is, the system flowing through the near ultraviolet semiconductor light emitting element 3A and the system flowing to the downstream semiconductor light emitting device 8 without flowing through the near ultraviolet semiconductor light emitting element 3A intersect three-dimensionally. Thus, the two systems in the first system can be crossed in three dimensions.
The second system is further divided into two systems: a system that flows through the near ultraviolet semiconductor light emitting element 3B and a system that flows to the downstream semiconductor light emitting device 8 without flowing through the near ultraviolet semiconductor light emitting element 3B. In the system flowing through the near ultraviolet semiconductor light emitting element 3B, electricity is input through the connection terminal 39A2 of the upstream semiconductor light emitting device 8, and the input electricity is the upstream second system power supply conductor layer 32B1.
, The electrode 21B1, the wiring 20B (not shown in FIG. 7), the near-ultraviolet semiconductor light emitting element 3B, the electrode 21B2, and the downstream second system power supply conductor layer 32B2, and output from the connection terminal 39C1. That is, between the electrode 21B1 and the electrode 21B2, the current flows in a different plane from the power supply conductor layer 32. Further, in a system that flows to the downstream semiconductor light emitting device 8 without flowing through the near-ultraviolet semiconductor light emitting element 3B, the electricity input through the connection terminal 39A2 of the upstream semiconductor light emitting device 8 is used for the upstream second system power supply. The signal passes through the conductor layer 32B1 and is output from the connection terminal 39B2. That is, the system flowing through the near ultraviolet semiconductor light emitting element 3B and the system flowing to the downstream semiconductor light emitting device 8 without flowing through the near ultraviolet semiconductor light emitting element 3A intersect three-dimensionally.
  The electricity output from the connection terminal 39B2 is input to the connection terminal 39A2 of the downstream semiconductor light emitting device 8 via the cable, and the upstream second system power supply conductor of the downstream semiconductor light emitting device 8 is connected. The light passes through the layer 32B1, the electrode 21B1, the wiring 20B (not shown in FIG. 7), the near-ultraviolet semiconductor light emitting element 3B, the electrode 21B2, and the downstream second system power supply conductor layer 32B2, and is output from the connection terminal 39C2. Electricity output from the connection terminal 39C2 of the downstream semiconductor light-emitting device 8 is input to the connection terminal 39D2 of the upstream semiconductor light-emitting device 8 via the cable, and passes through the downstream second system power supply conductor layer 32B2. And output from the connection terminal 39C2. The current flowing through the downstream second system power supply conductor layer 32B2 and the current flowing through the near ultraviolet semiconductor light emitting element 3B in the second system have different planes of flow. That is, the system flowing through the near ultraviolet semiconductor light emitting element 3B and the system flowing to the downstream semiconductor light emitting device 8 without flowing through the near ultraviolet semiconductor light emitting element 3B intersect three-dimensionally. In this way, the two systems in the second system can also cross three-dimensionally.
  Further, in the series connection, as shown in FIG. 8, the light emitting modules 30 are connected via a cable so that the near ultraviolet semiconductor light emitting elements 3A and 3B of the adjacent semiconductor light emitting devices 8 are connected in series. Specifically, they are connected as follows. The connection terminal 39D1 provided on the lower side of the downstream first system power supply conductor layer 32A2 is connected to the connection terminal 39A1 provided on the upper side of the upstream first system power supply conductor layer 32A1 of the adjacent light emitting module 30. Is done. The connection terminal 39D2 provided on the lower side of the downstream second system power supply conductor layer 32B2 is connected to the connection terminal 39A2 provided on the upper side of the upstream second system power supply conductor layer 32B1 of the adjacent light emitting module 30. Connected to. Note that the connection terminals 39B1 and B2 and the connection terminals 39C1 and 39C2 are not used. A series connection is realized by connecting the light emitting modules 30 as described above.
  The flow of electricity in the series connection shown in FIG. 8 is as follows. In the first system, electricity is input through the connection terminal 39A1 of the semiconductor light emitting device 8 on the upstream side, and the input electricity is the upstream first system power supply conductor layer 32A1, the electrode 21A1, and the wiring 20A (FIG. 8 is a diagram). (Not shown), the light passes through the near-ultraviolet semiconductor light emitting element 3A, the electrode 21A2, and the downstream first system power supply conductor layer 32A2, and is output from the connection terminal 39D1. Electricity output from the connection terminal 39D1 is input to the connection terminal 39A1 of the semiconductor light emitting device 8 on the downstream side via the cable. Like the upstream semiconductor light emitting device 8, the input electricity is the first upstream side. The system power supply conductor layer 32A1, the electrode 21A1, the wiring 20A (not shown in FIG. 8), the near-ultraviolet semiconductor light emitting element 3A, the electrode 21A2, and the downstream first system power supply conductor layer 32A2 pass through the connection terminal 39D1. Is output.
In the second system, electricity is input through the connection terminal 39A2 of the semiconductor light emitting device 8 on the upstream side, and the input electricity is the upstream second system power supply conductor layer 32B1, the electrode 21B1, and the wiring 20B (FIG. 8). , And passes through the near-ultraviolet semiconductor light emitting element 3B, the electrode 21B2, and the downstream second system power supply conductor layer 32B2, and is output from the connection terminal 39D1. In addition, the electricity output from the connection terminal 39D2 is input to the connection terminal 39A2 of the semiconductor light emitting device 8 on the downstream side via the cable, and the input electricity is the upstream side as in the semiconductor light emitting device 8 on the upstream side. The second system power supply conductor layer 32B1, the electrode 21B1, the wiring 20B (not shown in FIG. 8), the near ultraviolet semiconductor light emitting element 3B, the electrode 21B2, the downstream second system power supply conductor layer 32B2, and the connection terminal It is output from 39D1.
  Here, FIG. 9 shows an example of current supplied to each light-emitting device 8 for light emission control of the light-emitting module 30, and FIG. 9A particularly shows each of the currents via the power supply conductor layer 32A. FIG. 9B shows the transition of the current supplied to the near-ultraviolet semiconductor light-emitting element 3A arranged in the divided region portion 12A of the light-emitting device 8, and FIG. 9B shows each light-emitting device 8 via the power supply conductor layer 32B. The transition of the electric current supplied to the near-ultraviolet semiconductor light-emitting device 3B arrange | positioned in this divided area part 12B is shown. In the present embodiment, each near-ultraviolet semiconductor light-emitting element 3 is supplied with a rectangular current, and is supplied to the near-ultraviolet semiconductor light-emitting element 3B and the amount of current supplied to the near-ultraviolet semiconductor light-emitting element 3A. The total amount of current is controlled to be constant. In the state shown in FIG. 9, the amount of current supplied to the near ultraviolet semiconductor light emitting element 3A side is 25% of the sum, and the amount of current supplied to the near ultraviolet semiconductor light emitting element 3B side is 75% of the sum. As a result, the ratio between the light emission intensity from the divided region portion 12A of each light emitting device 8 and the light emission intensity from the divided region portion 12B of each light emitting device 8 is 1: 3.
  Thus, the amount of current supplied to each semiconductor light emitting element 3 side is made constant while keeping the sum of the amount of current supplied to the near ultraviolet semiconductor light emitting element 3A side and the amount of current supplied to the near ultraviolet semiconductor light emitting element 3B side constant. By adjusting the ratio, it is possible to change the ratio of the emission intensity from the divided region portion 12A and the divided region portion 12B while keeping the emission intensity as the light emitting module 30 constant. As a result, the correlated color temperature of the output light of the light emitting module 30 can be adjusted to an arbitrary value between 2600K and 6500K while the light emission intensity remains constant. Further, as described above, since the chromaticity point of the combined light is substantially along the black body radiation locus BBL, it provides white light that is very close to human vision and extends from 2600K to 6500K. The color temperature can be freely changed.
[Lighting device]
Here, FIG. 10 shows an example of a lighting device 70 using the light emitting module 30. The illumination device 70 illustrated in FIG. 10 includes four light emitting modules 30, a frame 50, a lens 51, and a power source / control unit 52. In the lighting device 70, four light emitting modules 30 according to the first embodiment described above are connected in parallel and fixed to the plate-like frame 50. The material of the frame 50 is preferably excellent in thermal conductivity so as to effectively dissipate heat from the light emitting module 30. The frame 50 corresponds to the heat radiating housing member of the present invention. The function and specifications of the lens 51 are not particularly limited, and for example, a condensing lens, a diffusing lens, or the like can be employed. The power source / control unit 52 is supplied with power from the outside, supplies power to each light emitting module 30, and controls voltage and current. Such an illumination device 70 can be suitably used as an indoor illumination device.
<Modification of First Embodiment>
Next, the modification of the light emitting module 30 of 1st embodiment is demonstrated. FIG. 11 shows a light emitting module 30 according to the first modification. In the light emitting module 30 of Modification 1, four light emitting modules 30 are linearly connected in series and fixed to the frame 50. The cable connecting the light emitting modules 30 is a two-terminal cable.
  FIG. 12 shows a light emitting module according to the second modification. In the light emitting module 30 according to the modified example 2, four light emitting modules 30 are linearly connected in parallel and fixed to the frame 50. The cable connecting the light emitting modules 30 is a two-terminal cable.
  FIG. 13 shows a light emitting module according to Modification 3. In the light emitting module 30 according to the modified example 3, four light emitting modules 30 are arranged in a curved shape, and serial connection and parallel connection are used together and fixed to the frame 50. FIG. 13 shows a part of the plurality of light emitting modules 30 arranged in a curved line. That is, in the modification 3, the upper and lower light emitting modules 30 shown in FIG. 13 are connected in parallel, but the two light emitting modules 30 existing between the upper and lower sides are connected in series. The cable connecting the light emitting modules 30 is a two-terminal cable. Further, the light emitting module 30 according to the modified example 3 is provided with a circular lens 51 so as to cover each light emitting module 30.
  FIG. 14 shows a light emitting module according to Modification 4. In the light emitting module 30 according to the modified example 4, five light emitting modules 30 are arranged in a plane, and series connection and parallel connection are used in combination. That is, in Modification 4, the upper left and lower right light emitting modules 30 shown in FIG. 14 are connected in parallel, but the other light emitting modules 30 are connected in series. The cable connecting the light emitting modules 30 is a two-terminal cable. In addition, a diffusion cover 51a is provided so as to cover all of the light emitting modules 30 according to the modified example 4.
  The semiconductor light-emitting device 8 up to the above has been described by taking as an example an embodiment using a package having divided region portions 12 whose inside is divided into the same number as the control system of the near-ultraviolet semiconductor light-emitting element 3. The semiconductor light emitting devices belonging to the light emitting section that outputs the same light spectrum are supplied with control power by the same control system, and the semiconductor light emitting elements belonging to the light emitting sections that output different light spectra are controlled by an independent control system. Thus, the present invention may be applied to a semiconductor light emitting device that does not include a package having a partition whose interior is divided into a plurality of divided regions.
For example, in the semiconductor light emitting device 8 according to Modification 5 shown in FIG. 15A, the base 2 is provided with a plurality of (in the illustrated example, two) packages 1A and 1B. Here, 1A is referred to as a “first package” and 1B is referred to as a “second package”.
  As shown in FIG. 15A, both the first package 1A and the second package 1B are not divided into a plurality of regions by partitions. The first package 1A is provided with a near ultraviolet semiconductor light emitting element 3A according to the first system, and the second package 1B is provided with a near ultraviolet semiconductor light emitting element 3B according to the second system. Each of the packages 1A and 1B includes a phosphor (not shown) corresponding to the near-ultraviolet semiconductor light-emitting element 3 disposed therein and a phosphor portion 14 containing a translucent material that seals the phosphor. (14A, 14B) is formed so as to cover the near-ultraviolet semiconductor light-emitting element 3, whereby the light-emitting portions in the present invention are configured.
  In the semiconductor light emitting device 8 according to Modification 5, the driving power to the near ultraviolet semiconductor light emitting element 3A disposed in the first package 1A and the driving power to the near ultraviolet semiconductor light emitting element 3B disposed in the second package 1B Are independently controlled, it is possible to output light having different spectra from the fluorescent part 14A formed in the first package 1A and the fluorescent part 14B formed in the second package 1B. Then, as shown in FIG. 15A, by arranging the first package 1A and the second package 1B close to each other, the output light output from the first package 1A and the output light output from the second package 1B By mixing colors with each other, synthesized light having a desired color temperature can be obtained.
Further, in the semiconductor light emitting device 8 according to Modification 6 shown in FIG. 15B, a plurality (two in the illustrated example) of phosphor-containing regions 11A and 11B are provided on the base 2. Here, 11A is referred to as a “first phosphor-containing region”, and 11B is referred to as a “second phosphor-containing region”.
  As shown in FIG. 15B, the first phosphor-containing region 11A and the second phosphor-containing region 11B are not partitioned by a package, and the near-ultraviolet semiconductor light-emitting element 3 is formed on a single base 2. Has been implemented. Here, the first phosphor-containing region 11A is provided with a near-ultraviolet semiconductor light-emitting element 3A according to the first control system, and the second phosphor-containing region 11B is provided with a near-ultraviolet semiconductor light-emitting element 3B according to the second control system. It has been. Further, each of the phosphor-containing regions 11A and 11B includes a phosphor (not shown) corresponding to the near-ultraviolet semiconductor light-emitting element 3 disposed in each of the phosphor-containing regions 11A and 11B, and a fluorescence containing a translucent material that seals the phosphor. The part 14 (14A, 14B) is formed so as to cover the near ultraviolet semiconductor light emitting element 3. As described above, in Modification 2 of the semiconductor light emitting device 8, the first phosphor-containing region 11A includes the semiconductor light emitting device 3A and the fluorescent portion 14A, and the second phosphor containing region 11B includes the semiconductor light emitting device 3B and the fluorescent portion. 14B is included. And each fluorescent substance containing area | region 11A, 11B comprised in this way respond | corresponds to the light emission part in this invention, respectively.
  In the semiconductor light emitting device 8 according to Modification 6 shown in FIG. 15B, the driving power to the semiconductor light emitting element 3A arranged in the first phosphor containing region 11A and the semiconductor light emitting device arranged in the second phosphor containing region 11B. By independently controlling the driving power to 3B, the fluorescent portion 14A formed in the first phosphor-containing region 11A and the fluorescent portion 14B formed in the second phosphor-containing region 11B have different spectra. Light can be output. Then, as shown in FIG. 15B, by arranging the first phosphor-containing region 11A and the second phosphor-containing region 11B close to each other, the output light output from the first phosphor-containing region 11A, By combining the output lights output from the two-phosphor-containing region 11B with each other, synthesized light having a desired color temperature can be obtained.
  The light emitting module, the lighting device, and the power supply mounted circuit board according to the present invention are semiconductor light emitting devices in which the inside of the package is not divided into a plurality of divided regions as in the semiconductor light emitting device 8 according to the modified example 5 shown in FIG. 15A. Alternatively, even a semiconductor light emitting device that does not include a package itself, such as the semiconductor light emitting device 8 according to Modification 6 shown in FIG. 15B, can be suitably applied.
  As described above, in the light emitting module 30 according to the first embodiment and the modification, the power supply conductor layer 32 includes the upstream first system power supply conductor layer 32A1 and the downstream first system power supply conductor layer. 32A2, the upstream second system power supply conductor layer 32B1, and the downstream second system power supply conductor layer 32B2, and the power supplied from another light emitting module 30 or power supply source connected upstream is supplied. In addition to being supplied to its own near-ultraviolet semiconductor light-emitting element 3, it can also be supplied to the near-ultraviolet semiconductor light-emitting element 3 of the downstream light-emitting module 30 that is electrically connected. Therefore, according to the light emitting module 30 according to the first embodiment, the semiconductor light emitting devices 8 can be connected not only in series but also in parallel. That is, the connection mode between the light emitting modules 30 can be freely changed, and the degree of freedom in design can be increased as compared with the related art.
<Second embodiment>
Next, a second embodiment will be described. Here, FIG. 16A shows a configuration of a light emitting module with a connector according to the second embodiment. FIG. 16B shows a base plate according to the second embodiment. FIG. 16C shows a cable connector according to the second embodiment. FIG. 16D shows a lens according to the second embodiment. FIG. 16E shows a light-emitting module with a connector according to the second embodiment. The light emitting module 30a with a connector according to the second embodiment includes a base plate 50a, a cable connector 53, a lens 51, and a light emitting module 30a with a connector.
The base plate 50a mounts the light emitting module 30a with a connector. The base plate 50a according to the second embodiment is formed with a groove at the boundary in order to be separable. The base plate 50a is provided with a plurality of fixing holes 54 for fixing the light emitting module 30a with a connector using a fixing member such as a screw. The material of the base plate 50a is preferably excellent in thermal conductivity so as to effectively dissipate heat from the light emitting module with connector 30a.
  The cable connector 53 is connected to the connector 55 provided in the light emitting module 30a with a connector to electrically connect the light emitting modules 30a with a connector to each other. What is necessary is just to design the length of the cable of the cable connector 53 suitably.
  The function and specifications of the lens 51 are not particularly limited, and for example, a condensing lens, a diffusing lens, or the like can be employed. In the second embodiment, the lens 51 is formed in a circular shape so as to cover the near ultraviolet semiconductor light emitting element 3.
  The basic configuration of the light emitting module 30 with a connector is the same as that of the light emitting module 30 according to the first embodiment. In the light emitting module 30 with a connector according to the second embodiment, eight connectors 55 to which the cable connector 53 can be freely connected are provided at each connection terminal of the circuit board 31. Thereby, it is possible to more easily connect the light emitting modules 30a with connectors. A cutout 57 is formed in the circuit board 31 of the light emitting module with connector 30a. The notch 57 is used for fixing to the base plate 50a. The light emitting module 30a with a connector can be fixed to the base plate 50a by aligning the positions of the notch 57 and the fixing hole 54 and fixing them using a fixing member such as a screw.
  Next, the connection aspect of the light emitting module 30a with a connector which concerns on 2nd embodiment is demonstrated. FIG. 17 shows a state in which the connector-equipped light emitting modules 30a according to the second embodiment are linearly connected in parallel. Moreover, FIG. 18 shows a mode that the light emitting module with a connector which concerns on 2nd embodiment was connected planarly.
  In the example shown in FIG. 17, three light emitting modules 30a with a connector are connected in parallel in a straight line. Connection between the light emitting modules 30 a with connectors is realized by each connector 55 and the cable connector 53. In FIG. 17, the base plate 50a is omitted, but the light emitting module 30a with a connector can be easily attached to the base plate 50a by aligning the positions of the notches 57 and the fixing holes 54 of the base plate 50a and fixing them with a fixing member. Can be fixed.
  In the example shown in FIG. 18, six light emitting modules 30a with connectors are provided in a planar shape, and series connection and parallel connection are used together. That is, the four light emitting modules 30a with connectors located on the left and right sides are connected in parallel, and the two light emitting modules 30a with connectors located in the center are connected in series.
  As described above, the semiconductor light emitting devices 8 can be connected not only in series but also in parallel by the light emitting module 30 with connector according to the second embodiment. That is, the connection mode between the light emitting modules 30 can be freely changed, and the degree of freedom in design can be increased as compared with the related art. Further, by forming a connector on the light emitting module, it becomes easier to connect the light emitting modules. Further, by using the base plate 50a and the lens 51 together, the degree of freedom in design and convenience are further improved.
  The above-described embodiment is an example for explaining the present invention, and various modifications can be made to the above-described embodiment without departing from the spirit of the present invention. In addition, the circuit board, the light emitting module, and the lighting device for mounting the semiconductor light emitting device according to the present invention are not limited to the above embodiment, and can include combinations thereof as much as possible.
DESCRIPTION OF SYMBOLS 1 ... Package 2 ... Base 3, 3A, 3B ... Semiconductor light emitting element 8 ... Semiconductor light emitting device 10 ... Reflector 11 ... Partition 12, 12A, 12B ... ... Dividing region part 13 ... Opening parts 13A, 13B ... Dividing opening parts 20, 20A, 20B ... Wirings 20C, 20D ... Counter wirings 21A, 21B ... Electrodes 30... Light emitting module 31... Circuit board 31a... Circuit board with connectors 32, 32A, 32B... Power supply conductor layer 32A1. 32A2 ... downstream first system power supply conductor layer 32B1 ... upstream second system power supply conductor layer 32B2 ... downstream second system power supply conductor layer 33 ... insulation member 33A ... Central insulating member 33B ... Flow-side insulating member 33C ... downstream-side insulating member 36 ... base material portion 37 ... electrical insulation protective coating layer 50 ... frame 51 ... lens 52 ... power source / control unit 70 ... Lighting devices

Claims (10)

  1. Semiconductor light emitting device including a plurality of light emitting units each including a semiconductor light emitting element and outputting light of at least two spectra, wherein the light emitting units outputting light of different spectra are controlled independently of each other A semiconductor light emitting device mounting circuit board on which the device is mounted,
    A plate-like base material portion made of a heat conductive material on which the semiconductor light emitting device is mounted;
    The light emitting unit formed on the base member and at least one of the plurality of light emitting units and another light emitting unit that outputs a spectrum of light different from the spectrum of light output from the one light emitting unit are separated. A power supply unit that supplies power to each of the semiconductor light-emitting elements and can supply power to other electrically connected semiconductor light-emitting devices without going through the semiconductor light-emitting elements. Circuit board with semiconductor light emitting device.
  2.   The semiconductor light emitting device-mounted circuit board according to claim 1, wherein the power supply unit is formed in a planar shape on the base material unit.
  3. The power supply unit
    A first system unit that supplies power to the semiconductor light emitting element of the one light emitting unit and is capable of supplying power to the semiconductor light emitting element of one light emitting unit of another semiconductor light emitting device electrically connected;
    A second system unit that supplies electric power to the semiconductor light emitting element of the other light emitting unit and can supply electric power to the semiconductor light emitting element of the other light emitting unit of the other semiconductor light emitting device that is electrically connected. ,
    The first system part is a first system upstream part located upstream of the semiconductor light emitting element of the one light emitting part, and is connected to the first system upstream part of another semiconductor light emitting device to be electrically connected A free first system upstream portion and a first system downstream portion located downstream of the semiconductor light emitting element of the one light emitting portion, and a first system downstream portion of another electrically connected semiconductor light emitting device And the first system downstream that can be freely connected,
    The second system part is a second system upstream part located upstream of the semiconductor light emitting element of the other light emitting part, and is connected to the second system upstream part of another semiconductor light emitting device to be electrically connected A free second system upstream portion and a second system downstream portion located downstream of the semiconductor light emitting element of the other light emitting portion, and a second system downstream portion of another semiconductor light emitting device to be electrically connected And a second system downstream that can be freely connected,
    The semiconductor light emitting device mounted circuit board is:
    3. The semiconductor according to claim 1, further comprising an insulating portion that insulates and partitions the first system upstream portion, the first system downstream portion, the second system upstream portion, and the second system downstream portion from each other. Circuit board with light emitting device.
  4. Semiconductor light emitting device including a plurality of light emitting units each including a semiconductor light emitting element and outputting light of at least two spectra, wherein the light emitting units outputting light of different spectra are controlled independently of each other Equipment,
    A semiconductor light emitting device mounting circuit board on which the semiconductor light emitting device is mounted,
    The semiconductor light emitting device mounted circuit board is:
    A plate-like base material portion made of a heat conductive material on which the semiconductor light emitting device is mounted;
    The semiconductor light emitting device is formed on the base material portion, and the semiconductor light emitting device includes at least one light emitting portion among the plurality of light emitting portions and another light emitting portion that outputs a light emission spectrum different from a spectrum output from the one light emitting portion as separate systems. A power supply unit that supplies power to each of the elements and is capable of supplying power to other semiconductor light emitting devices that are electrically connected without passing through the semiconductor light emitting elements;
    A light emitting module comprising:
  5. The power supply unit is formed in a planar shape as a power supply circuit on the base material unit,
    The circuit in the semiconductor light emitting device is formed on a different surface from the power supply circuit,
    The light emitting module according to claim 4, wherein the wiring of the power supply circuit and the wiring of the circuit in the semiconductor device intersect three-dimensionally.
  6. The light emitting module according to claim 4 or 5, wherein each of the light emitting units includes a semiconductor light emitting element and a phosphor.
  7. The color temperature of the said one light emission part and said other light emission part differs 2000K or more, and the color temperature of the mixed white light output from the said light emission module is variable. Light emitting module.
  8.   8. The semiconductor light emitting device includes a package having a divided region portion that is divided into two or more inside, and each light emitting portion is provided in each divided region portion in the package. The light emitting module according to claim 1.
  9.   The illuminating device which has one or more the light emitting modules of any one of Claims 4-8.
  10. A plurality of light emitting modules according to any one of claims 4 to 8,
    A cable for connecting the plurality of light emitting modules in at least one connection mode among a series connection, a parallel connection, and a connection using a combination of a series connection and a parallel connection;
    A base plate on which the plurality of light emitting modules are mounted;
    A lighting device comprising:
JP2010142515A 2010-06-23 2010-06-23 Semiconductor light emitting device mounted circuit board, light emitting module, and lighting apparatus Pending JP2012009533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010142515A JP2012009533A (en) 2010-06-23 2010-06-23 Semiconductor light emitting device mounted circuit board, light emitting module, and lighting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010142515A JP2012009533A (en) 2010-06-23 2010-06-23 Semiconductor light emitting device mounted circuit board, light emitting module, and lighting apparatus

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JP2008034513A (en) * 2006-07-27 2008-02-14 Sumitomo Metal Electronics Devices Inc Substrate for mounting light emitting element, and its manufacturing method
JP2008159394A (en) * 2006-12-22 2008-07-10 Koha Co Ltd Fitting unit and surface light-emitting device
JP2008193133A (en) * 2003-06-20 2008-08-21 Yazaki Corp Led lamp module and lamp module assembly
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JP2009076684A (en) * 2007-09-20 2009-04-09 Harison Toshiba Lighting Corp Light emitting device and lamp fitting
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JP2009238729A (en) * 2007-11-12 2009-10-15 Mitsubishi Chemicals Corp Lighting system
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JP2012004266A (en) * 2010-06-16 2012-01-05 Mitsubishi Chemicals Corp Light-emitting module, lighting apparatus,and power supply circuit board

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008193133A (en) * 2003-06-20 2008-08-21 Yazaki Corp Led lamp module and lamp module assembly
JP2006303008A (en) * 2005-04-18 2006-11-02 Momo Alliance Co Ltd Substrate for light source, and light source unit
JP2007324275A (en) * 2006-05-31 2007-12-13 Toyoda Gosei Co Ltd Light emitting device
JP2008034513A (en) * 2006-07-27 2008-02-14 Sumitomo Metal Electronics Devices Inc Substrate for mounting light emitting element, and its manufacturing method
JP2008159394A (en) * 2006-12-22 2008-07-10 Koha Co Ltd Fitting unit and surface light-emitting device
JP2009044055A (en) * 2007-08-10 2009-02-26 Toshiba Lighting & Technology Corp Led module and led lighting equipment
JP2009076684A (en) * 2007-09-20 2009-04-09 Harison Toshiba Lighting Corp Light emitting device and lamp fitting
JP2009238729A (en) * 2007-11-12 2009-10-15 Mitsubishi Chemicals Corp Lighting system
JP2009224074A (en) * 2008-03-13 2009-10-01 Panasonic Electric Works Co Ltd Led lighting device
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