JP2011166973A - Power conversion apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress partial deterioration in heat transfer performance from a plurality of semiconductor modules. <P>SOLUTION: An inverter 1 for composing a three-phase power conversion apparatus includes six semiconductor devices 10. The respective semiconductor devices 10 include a semiconductor module 22 and a pair of heat sinks 11 attached onto both surfaces. Thus, the heat transfer performance from the semiconductor module 22 to the heat sink 11 can be managed in the respective semiconductor devices 10. Further, the plurality of semiconductor devices 10 are disposed in a matrix of at least 2×2. Thus, suppression of a difference in heat dissipation properties from the heat sink and a compact arrangement can be satisfied compatibly. Further, the plurality of semiconductor devices 10 are stored inside a case, thus achieving stable fixing. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a power conversion device including a plurality of semiconductor modules for converting multiphase power.

  Patent Document 1 discloses a multiphase power conversion device in which a plurality of semiconductor modules and a cooling device are arranged between a control circuit unit and a power wiring unit. Patent Document 2 discloses a water cooling device for a plurality of semiconductor modules. Further, Patent Document 3 discloses a configuration in which a plurality of air cooling heat sinks and a plurality of semiconductor modules are alternately stacked.

JP 2005-73374 A JP 2005-191527 A JP 2008-278576 A

  In the configuration of the prior art, in order to sufficiently transfer heat from the semiconductor module to the cooling medium pipe, it is desirable that the semiconductor module and the cooling medium pipe are in contact with each other over a wide area. However, the cooling devices of Patent Document 1 and Patent Document 2 alternately stack two or more semiconductor modules and a plurality of cooling medium tubes. For this reason, a partial gap may be formed between some of the semiconductor modules and the cooling medium pipe adjacent thereto. Such a gap reduces the contact area between the semiconductor module and the cooling medium pipe. Therefore, a part of the heat transfer performance is lower than the heat transfer performance of the other parts. For example, the heat transfer performance from one semiconductor module is lower than the heat transfer performance from another semiconductor module. Such a partial reduction in heat transfer performance reduces the amount of heat released from the semiconductor module.

  On the other hand, in the configuration of Patent Document 3, two or more semiconductor modules and air-cooled heat sinks are stacked. For this reason, there was a problem similar to the above.

  This invention is made | formed in view of the said problem, The objective is to provide the multiphase power converter device which can suppress the partial fall of the heat-transfer performance from several semiconductor modules. .

  Another object of the present invention is to suppress a difference in heat dissipation performance from a plurality of semiconductor modules while suppressing a partial decrease in heat transfer performance from the plurality of semiconductor modules, and to provide a compact arrangement of the plurality of semiconductor modules. It is providing the multiphase power converter device which can be compatible.

  Still another object of the present invention is to provide a multi-phase power converter capable of stably fixing a plurality of semiconductor modules while suppressing a partial decrease in heat transfer performance from the plurality of semiconductor modules. It is.

  The present invention employs the following technical means to achieve the above object.

  The invention according to claim 1 is provided with a plurality of semiconductor devices and a case for housing the plurality of semiconductor devices, each of the semiconductor devices having a pair of main surfaces facing each other and incorporating a semiconductor element. A case comprising: a module; two heat sinks disposed on both sides of the semiconductor module; and a connecting device for connecting the semiconductor module and the two heat sinks so as to enable heat transfer from the semiconductor module to the two heat sinks. Includes a plurality of semiconductor devices and a vent hole for supplying air to the heat sink. According to this configuration, heat transfer from the semiconductor module to the heat sink can be managed for each semiconductor device. For this reason, even if several semiconductor devices are accommodated in a case, the partial fall of the heat-transfer performance from a semiconductor module can be suppressed.

  According to a second aspect of the present invention, each semiconductor module includes a switching element that controls electric power, and the power conversion device includes at least six semiconductor devices. According to this configuration, at least six switching elements necessary for configuring a three-phase multiphase power converter are provided. In addition, it is possible to suppress a partial decrease in heat transfer performance from the switching elements to the heat sink.

  The invention described in claim 3 is characterized in that the semiconductor modules are arranged in a matrix of 2 × 2 or more in the case. According to this configuration, while suppressing a partial decrease in heat transfer performance from a plurality of semiconductor modules, it is possible to achieve both suppression of the difference in heat dissipation performance from the plurality of semiconductor modules and compact arrangement of the plurality of semiconductor modules. be able to.

  The invention described in claim 4 is characterized in that the semiconductor device is supported by being sandwiched between the opposing wall surfaces of the case in the case. According to this configuration, the plurality of semiconductor modules can be stably fixed while suppressing a partial decrease in heat transfer performance from the plurality of semiconductor modules.

  The invention described in claim 5 is further characterized by further comprising an elastic support member provided between the semiconductor device and the case and elastically supporting the semiconductor device. According to this configuration, the plurality of semiconductor modules can be stably fixed while suppressing a partial decrease in heat transfer performance from the plurality of semiconductor modules.

  The invention described in claim 6 is characterized in that the case sandwiches the semiconductor device in a direction intersecting with the stacking direction of the semiconductor module and the heat sink. According to this configuration, the semiconductor device can be stably fixed, and an undesirable change in the contact state between the semiconductor module and the heat sink can be suppressed.

It is a schematic diagram which shows the state which mounted the inverter drive device to which the semiconductor device of 1st Embodiment was applied in the vehicle. It is a circuit diagram of the inverter drive device to which the semiconductor device of the first embodiment is applied. 1 is an exploded perspective view illustrating a configuration of a semiconductor device according to a first embodiment. 1 is a perspective view illustrating a configuration of a semiconductor device according to a first embodiment. It is a perspective view which shows the state which accommodated the six semiconductor devices in the case. It is a perspective view which shows the external appearance of the inverter apparatus of 1st Embodiment. It is sectional drawing which shows the state which accommodated the semiconductor device of 1st Embodiment in the case. It is a perspective view of the inverter circuit unit which concerns on 2nd Embodiment of this invention. It is a perspective view which shows the decomposition | disassembly state of the assembly and elastic member which concern on 2nd Embodiment. It is sectional drawing of the case which concerns on 2nd Embodiment. It is a front view which shows the decomposition | disassembly state of the assembly and elastic member which concern on 2nd Embodiment. It is a side view which shows the decomposition | disassembly state of the case which concerns on 2nd Embodiment. It is a front view which shows the decomposition | disassembly state of the case which concerns on 2nd Embodiment. It is a front view of the ventilation path formation member which concerns on 3rd Embodiment of this invention. It is a cross-sectional view of the ventilation path forming member which concerns on 3rd Embodiment. It is a longitudinal cross-sectional view of the ventilation path formation member which concerns on 3rd Embodiment. It is a front view of the ventilation path formation member which concerns on 3rd Embodiment. It is a front view of the ventilation path formation member which concerns on 4th Embodiment of this invention. It is a front view of the ventilation path formation member which concerns on 5th Embodiment of this invention. It is a perspective view which shows the structure of the semiconductor device of 6th Embodiment of this invention.

  A plurality of modes for carrying out the present invention will be described below with reference to the drawings. In each embodiment, parts corresponding to the matters described in the preceding embodiment may be denoted by the same reference numerals, and redundant description may be omitted. When only a part of the configuration is described in each mode, the other modes described above can be applied to the other parts of the configuration. Not only combinations of parts that clearly show that combinations are possible in each embodiment, but also combinations of the embodiments even if they are not explicitly stated unless there is a problem with the combination. Is also possible.

(First embodiment)
The present invention can be applied to an inverter device as a motor driving device that drives a high-output motor. This inverter device is a device that performs bidirectional conversion between DC power and AC power, for example, a U-phase, V-phase, and W-phase three-phase inverter device, a hybrid vehicle that uses an AC motor, a fuel cell vehicle, Installed in electric vehicles.

  1st Embodiment demonstrates the example which applied the semiconductor device 10 to the inverter apparatus 1 which has the three-phase inverter circuit which drives the motor 3 for driving | running | working. FIG. 1 is a schematic diagram showing a state in which an inverter device 1 to which a semiconductor device 10 is applied is mounted on a vehicle. FIG. 2 is a circuit diagram of the inverter device 1 to which the semiconductor device 10 is applied.

  As shown in FIG. 1, the inverter device 1 is connected to a traveling motor 3 mounted on the front side of the vehicle in a wired manner so as to be output, and mounted on the rear side of the vehicle so as to be adjacent to the battery 4, and for cooling Air blown by the fan 9 flows through a predetermined ventilation path formed by a duct and is supplied to the semiconductor device 10 to be air-cooled. The air that cools the inverter device 1 is taken from the outside of the vehicle or the vehicle interior, passes through the semiconductor device 10, and is discharged outside the vehicle. In this way, the inverter device 1 can be kept at a temperature at which a predetermined function can be exhibited.

  As shown in FIG. 2, the inverter circuit (inverter device 1) includes six semiconductor modules 22a, 22b, 22c, 22d, 22e, and 22f (hereinafter referred to as arbitrary semiconductor modules among the six semiconductor modules). Is simply referred to as a semiconductor module 22), capacitors 5 and 6, resistors 7 and 8, and a control circuit 100. A battery 4 is connected to the input side of the inverter circuit. A motor 3 is connected to the output side of the inverter circuit.

  The power module 2 is controlled by the control circuit 100, and is configured with elements for configuring an inverter circuit that converts DC power output from the battery 4 into AC power and supplies the AC power to the motor 3. The power module 2 includes IGBTs 20a, 20b, 20c, 20d, 20e, and 20f (switching elements) and free wheeling diodes 21a, 21b, 21c, 21d, 21e, and 21f. Each semiconductor module 22 includes one IGBT and one freewheeling diode.

  The IGBTs 20a and 20b, the IGBTs 20c and 20d, and the IGBTs 20e and 20f are respectively connected in series. The collectors of the IGBTs 20 a, 20 c and 20 e on the upper arm side are connected to the positive terminal side of the battery 4, and the emitter of the IGBT 20 d on the lower arm side is connected to the negative terminal side of the battery 4. The emitters of the IGBTs 20b and 20f on the lower arm side are connected to the negative terminal side of the battery 4 via resistors 7 and 8, respectively. The gates of the IGBTs 20 a to 20 f are connected to the control circuit 100. The emitters of the IGBTs 20a, 20c, and 20e are connected to the control circuit 100. Furthermore, the connection point between the IGBT 20 a and the IGBT 20 b, the connection point between the IGBT 20 c and the IGBT 20 d, and the connection point between the IGBT 20 e and the IGBT 20 f are connected to the motor 3. Freewheeling diodes 21a to 21f are connected between the collectors and emitters of the IGBTs 20a to 20f, respectively.

  The resistors 7 and 8 are elements that convert a current supplied from the power module 2 to the motor 3 into a voltage. One end of the resistor 7 is connected to the emitter of the IGBT 20 b, and the other end is connected to the negative terminal of the battery 4. One end of the resistor 8 is connected to the emitter of the IGBT 20 f and the other end is connected to the negative terminal side of the battery 4. Further, both ends of the resistors 7 and 8 are connected to the control circuit 100.

  Capacitor 5 smoothes the output voltage of battery 4. The capacitor 6 suppresses noise entering the power module 2 and detects a voltage applied from the battery 4 to the power module 2. The capacitor 5 and the capacitor 6 are connected to the battery 4 in parallel. Both ends of the capacitor 6 are connected to the control circuit 100.

  The control circuit 100 is based on an external command, a current supplied to the motor 3 from the power module 2 detected by the resistors 7 and 8, and a voltage applied to the power module 2 from the battery 4 detected by the capacitor 6. Thus, the power module 2 is controlled. The control circuit 100 is connected to the power module 2, the resistors 7 and 8, and the capacitor 6.

  Next, the configuration of the semiconductor device 10 will be described with reference to FIGS. FIG. 3 is an exploded perspective view showing the configuration of the semiconductor device 10. FIG. 4 is a perspective view showing the configuration of the semiconductor device 10. As shown in FIG. 3, one semiconductor device 10 is arranged on each of the card-shaped semiconductor module 22 and both sides of the main body 226 (both sides of the main surfaces 221 and 222) so as to sandwich the semiconductor module 22. A heat sink 11 and a cooling mechanism capable of both-side cooling.

  The semiconductor module 22 incorporates IGBTs 20a to 20f and free wheeling diodes 21a to 21f, which are semiconductor elements, and has a main body 226 having a pair of opposed main surfaces 221 and 222, and protrudes outward from the main body 226. A collector-side electrode terminal 223, an emitter-side electrode terminal 224, and a control signal terminal 225.

  Further, an insulating substrate 12 made of ceramic is interposed between the main body 226 and the heat sink 11 of the semiconductor module 22, and further, good heat is provided between the insulating substrate 12, the heat sink 11 and the main body 226. Conductive silicon-based heat dissipation grease is applied. The insulating substrate 12 may be formed of an aluminum nitride film or a silicon rubber sheet, and the insulating substrate 12 and the heat dissipation grease may employ a heat dissipation film having insulating properties.

  The semiconductor elements of the IGBT and the free wheeling diode are joined to the inner main surface of the metal heat transfer plate 220 located on the main surface 221 side by a solder layer, and the remaining main surface of the semiconductor element has an opposite main surface. A metal heat transfer plate (not shown) located on the surface 222 side is joined by a solder layer. In this way, the anode and cathode of the freewheeling diode are connected to the IGBT collector and emitter in so-called reverse parallel (see FIG. 2). The metal heat transfer plate 220 and the metal heat transfer plate located on the main surface 222 side are electrically connected to the collector side electrode terminal 223 and the emitter side electrode terminal 224, respectively. Further, the solder layer may be replaced with another bonding function material.

  The main body portion 226 is a rectangular plate-shaped member made of, for example, an epoxy resin, and completely molds a semiconductor element. Is molded so as to be exposed. The collector-side electrode terminal 223 and the emitter-side electrode terminal 224 protrude from one side surface of the main body 226 in the direction X parallel to the main surfaces 221 and 222, and the plurality of control signal terminals 225 that are lead frame terminals are from the other side surface. Projecting in the opposite direction to the collector-side electrode terminal 223 and the like, it is connected to an electrode and the like formed on the gate of the IGBT.

  The heat sink 11 includes a plate-like substrate portion 110 that is thermally coupled to the main surfaces 221 and 222 of the semiconductor module 22, and a plurality of first portions that protrude from the substrate portion 110 in a right angle direction (corresponding to the fin protruding direction Z). 1 fin 112 and a member integrally formed of aluminum or copper. The first fins 112 are rectangular plate members that protrude from the side opposite to the main surface 111 of the substrate part 110, and a plurality of first fins 112 form rows at intervals in the thickness direction Y thereof. Are lined up like

  The heat sink 11 further includes two second fins 113. The second fin 113 is perpendicular to the substrate portion 110 on the outer side of the fins located on the outermost sides in both the thickness directions Y of the first fins 112 in a plurality of rows (fin projecting direction Z). It is a plate-shaped fin which protrudes in the direction. The second fin 113 is formed so as to be parallel to the first fin 112 and has a thick portion having a thickness dimension larger than that of the first fin 112. For example, the thick part of the second fin 113 has a thickness twice or more that of the first fin 112. The second fin 113 of the present embodiment is a plate having the same thickness as a whole, and the whole is a thick portion having a thickness dimension larger than that of the first fin 112. It may be formed only on a part of the two fins 113.

  The second fin 113 is a direction perpendicular to the thickness direction Y and parallel to the main surfaces 221 and 222 of the semiconductor module 22 ("direction X parallel to the main surface" shown in FIGS. 3 and 4). The length dimension is smaller than that of the first fin 112. Therefore, the second fin 113 is a fin whose lateral width dimension L2 is shorter than the lateral width dimension L1 of the first fin 112 and is thicker than the first fin 112.

  Further, since the second fin 113 is positioned at the center of the substrate unit 110 in the direction X parallel to the main surface of the substrate unit 110 in FIG. 3, the second fin 113 does not protrude from the substrate unit 110 ( The finless portion 110 a) is provided on both sides of the second fin 113 in the “direction X parallel to the main surface” shown in FIGS. 3 and 4. Therefore, the second fin 113 is arranged so as to overlap with the arrangement position of the main body 226 of the semiconductor module 22 in the “direction X parallel to the main surface”. The finless portion 110 a is provided on both of the two heat sinks 11 that sandwich the semiconductor module 22.

  As shown in FIG. 4, leaf springs 13, which are examples of elastic members that bias the semiconductor module 22 from both sides via the heat sink 11 by elastic force, are attached to the finless portions 110 a on both sides. . The leaf spring 13 has a U-shaped cross-sectional shape, and a flat surface portion 13a facing the end surface in the thickness direction Y of the finless portion 110a (the top surface of the finless portion 110a in FIG. 4), and a flat portion A member formed by integrally forming a leg portion 13b extending at right angles to the flat surface portion 13a from both end sides of the 13a, and a curved portion 13c that bends at both end sides of the flat surface portion 13a so as to connect the flat surface portion 13a and the leg portion 13b. It is.

  The leaf spring 13 is inserted in the thickness direction Y of FIG. 4 so that the two heat sinks 11 arranged on both sides with the semiconductor module 22 interposed therebetween are fitted from the outside to the finless portion 110a on the leg portion 13b side. The flat portion 13a is attached by being deeply fitted until it comes into contact with or close to the top surface of the finless portion 110a. By this operation, the space between the opposing leg portions 13b formed shorter than the length of the fin projecting direction Z (direction perpendicular to the substrate portion 110) in the opposing finless portion 110a is pushed outward, so that the leaf spring 13 The elastic force acting inward to return to the original state gives a force that pushes the side surface of the opposed finless portion 110a inward to the heat sinks 11 on both sides as a clamping force.

  A total of four leaf springs 13 are attached to each of the upper end and the lower end of each semiconductor device 10. For this reason, the four leaf springs 13 hold the semiconductor module 22 in a balanced manner from the outside of the four corners of the rectangular main body 226 with an equal force. As a result, the main body portion 226 of the semiconductor module 22 and the insulating substrate 12 and the heat radiation grease on both sides thereof are strongly sandwiched and fixed in close contact by the main surfaces 111 of the two heat sinks 11, as shown in FIG. Two semiconductor devices 10 are formed.

  Since the semiconductor device 10 having the above configuration includes one semiconductor module 22, in the three-phase inverter circuit, six semiconductor devices 10 are arranged adjacent to the inverter circuit unit 30 as shown in FIG. Become. FIG. 5 is a perspective view showing a state in which six semiconductor devices 10 are housed in a case of the inverter circuit unit 30. FIG. 5 shows a state in which the lid portion 37 attached to the upper portion of the lower case 31 is removed for easy understanding of the arrangement state of the semiconductor device 10. FIG. 7 is a cross-sectional view showing a state in which the semiconductor device 10 is housed in the case of the inverter circuit unit 30.

  The lower case 31 is a rectangular parallelepiped box having an open upper surface and two opposite side surfaces, and a lid portion 37 is attached to the upper surface as shown in FIG. 7, and a plate-like ventilation is provided on each of the two opposite side surfaces. The path forming members 32 and 33 are attached. Each of the ventilation path forming members 32 and 33 is formed with a plurality of ventilation openings 32b (four ventilation openings in this example) arranged in the lateral direction (corresponding to the fin protruding direction Z). The ventilation path forming members 32 and 33 are fixed to the lower case 31 by being screwed to the female screw portions formed at the four corners of each of the two side surfaces of the lower case 31 with mounting screws 36a. The lower case 31, the lid part 37, and the ventilation path forming members 32 and 33 are resin members, respectively.

  In the case in which the lower case 31 and the ventilation path forming members 32 and 33 are integrated, six semiconductor devices 10 are inserted and installed at predetermined positions from above. Two semiconductor devices 10 are arranged close to each other in a straight line, two in the vertical direction (corresponding to the direction X parallel to the main surface) and three in the horizontal direction (corresponding to the fin protruding direction Z). The semiconductor module devices are arranged so as to constitute the U-phase, V-phase and W-phase in the horizontal direction and the upper and lower arms of the same phase in the vertical direction, and then electrically connected by wire. Each semiconductor device 10 is mounted in the case so that the control signal terminal 225 is on the top and the collector side electrode terminal 223 and the emitter side electrode terminal 224 are on the bottom. Therefore, in the case, for each semiconductor device 10, the second fins 113 are positioned on both the upper and lower sides so as to sandwich a plurality of first fins 112 arranged in the middle.

  The adjacent ventilation openings 32b are partitioned in the lateral direction (corresponding to the fin protruding direction Z) by the partition portions 32a formed in the ventilation path forming members 32 and 33. Each partition portion 32 a is provided so as to correspond to a portion where the first fin 112 of the heat sink 11 is not formed with respect to the semiconductor device 10 in the lower case 31. Therefore, four partition portions 32 a formed on each of the ventilation path forming members 32 and 33 are opposed to portions including the main body portion 226 and the substrate portions 110 on both sides of the semiconductor device 10.

  Thereby, about each heat sink 11, the side part of the 1st fin 112 located in the edge part of the direction X parallel to a main surface is formed in the four ventilation openings 32b formed in the ventilation path formation members 32 and 33, respectively. It corresponds. The ventilation openings 32b formed in the ventilation path forming members 32, 33 on the two side surfaces located at the opposite sides communicate with each other in the direction X parallel to the main surface via the first fins 112 arranged therebetween. That is, with respect to the semiconductor device 10 on the upstream side and the downstream side of the air flow, the plurality of first fins 112 arranged in the thickness direction Y are aligned in the thickness direction Y so as to be aligned with the direction X parallel to the main surface. They are aligned. Thereby, each gap formed between the first fins 112 arranged in the thickness direction Y is connected in the semiconductor device 10 on the upstream side and the upstream side of the air flow, and linearly extends in the direction X parallel to the main surface. It has come to be connected. Due to the gaps between the first fins 112 connected in this way, the ventilation openings 32b formed in the ventilation path forming members 32, 33 on the two side surfaces communicate with each other, and the ventilation openings 32b located on the two side faces. Will be formed.

  When forced air is supplied to the inverter device 1 by the fan 9, air flows in from the vent 32 b located on the upstream side of the air flow, and then flows through the gaps between the first fins 112. The air is discharged to the outside through the vent 32b located on the downstream side of the air flow. Therefore, the direction in which the forced air flows through the inverter circuit unit 30 coincides with the direction X parallel to the main surface. During operation of the inverter circuit unit 30 composed of the six semiconductor modules 22, the heat generated in each semiconductor element is generated by the insulating substrate 12, the heat radiation grease on both sides, the substrate portion 110, the first fin 112, or the second When the forced air flows through the fins 113 and flows through the gaps between the first fins 112, the forced air is discharged from both sides of the semiconductor module 22 and the semiconductor modules 22 are cooled.

  FIG. 6 is a perspective view showing the appearance of the inverter device 1. As shown in FIG. 6, the inverter device 1 that drives and controls the motor 3 is a device in which a capacitor unit 50, an inverter circuit unit 30, and a control circuit unit 40 are stacked and integrated in three stages. The capacitor unit 50 has a capacitor 5 and a capacitor 6 mounted inside a case 51. In the control circuit unit 40, a control board constituting the control circuit 100 is mounted inside the case 41.

  Mounting legs 35 having internal thread portions for mounting the inverter circuit unit 30 to the case 51 of the capacitor unit 50 installed below are provided at four corners at the bottom of the lower case 31. The capacitor unit 50 is integrally attached to the lower side of the inverter circuit unit 30 by screwing and fixing the case 51 to each attachment leg 35 with each attachment screw 53.

  Mounting legs 34 a having female thread portions for mounting the case 41 of the control circuit unit 40 installed above to the case of the inverter circuit unit 30 are provided at the four corners of the upper portion of the lower case 31. The control circuit unit 40 fixes the control circuit board of the control circuit unit 40 to the case of the inverter circuit unit 30 by screwing or the like, and then screws the case 41 covered from above to each mounting leg 34 a by screwing. By doing so, the inverter circuit unit 30 is integrally attached.

  Further, from the case of the inverter circuit unit 30, a three-phase terminal portion 52 for connecting an output line to be output to the motor 3 is exposed, and a terminal portion for connecting a power input line from the battery 4 ( (Not shown) is exposed. In addition, the case 41 of the control circuit unit 40 exposes a connector portion 43 for connecting a power supply line for turning on the vehicle-side power to the control circuit 100 and a signal line from the vehicle ECU, and the capacitor unit 50 and the inverter. A lead wire passage 42 for drawing a lead wire from the circuit unit 30 into the control circuit unit 40 is provided. The case 41 and the case 51 are resin members, respectively.

  Next, the function of the second fin 113 will be described in detail. FIG. 7 is a cross-sectional view showing a state in which the semiconductor device 10 is housed in the case of the inverter circuit unit 30. When the six semiconductor devices 10 are mounted in the case of the inverter circuit unit 30, the lid portion 37 is fixed to the lower case 31 by screwing or the like. As shown in FIG. On the upper part, an external force is applied downward from the lid part 37, while the lower part of each heat sink 11 pushes the bottom part of the lower case 31 and receives a reaction force directed upward from the bottom part. That is, all the heat sinks 11 of the six semiconductor devices 10 are pressed from the case of the inverter circuit unit 30 inward (in the thickness direction Y).

  For this reason, an excessive load may be applied to the upper and lower ends of each heat sink 11 that receive external force directly from the case, and fin deformation may occur during the assembly process. In the semiconductor device 10 of the present embodiment, the second fins 113 located at the upper and lower ends of the heat sink 11 are thicker than the first fins 112, so that the strength of the second fins 113 can be improved. . Therefore, the semiconductor device 10 includes a fin portion that is not easily deformed by a direct external force from the case.

  Further, when the semiconductor element generates heat, the generated heat is first transmitted to the substrate portion 110 via the insulating substrate 12 and the like, and then to the first fin 112 and the second fin 113 formed integrally with the substrate portion 110. It is transmitted. In particular, the second fin 113 has a larger heat capacity than the first fin 112 because it has a large thickness and a large volume per length. Therefore, the second fin 113 has an excellent ability to store heat temporarily, and greatly functions as a heat mass in the heat sink 11.

  In the case of a temperature change accompanying the heat generation process of the semiconductor element, the temperature shifts from the temperature increase process of the semiconductor element to a steady state where the temperature approaches a constant value. In this temperature rise process, the amount of heat generated from the semiconductor element changes greatly, and the temperature change of the semiconductor element is improved by improving the heat transfer characteristic in such a transient state (hereinafter also simply referred to as “transient characteristic”). And the effect of extending the life can be obtained by reducing the thermal load of the semiconductor element.

  Therefore, in the semiconductor device 10, when the semiconductor element generates heat during operation of the inverter circuit unit 30, the heat is transmitted to the board portions 110 on both sides and then to the first fin 112 and the second fin 113. At this time, since the second fin 113 having the thick part has a high heat storage capacity, the heat transmitted to the substrate unit 110 easily moves to the second fin 113, and the heat in the substrate unit 110 is moved outward. It becomes easy to escape. For this reason, when the semiconductor element generates heat in a short time, the heat is rapidly released from the substrate part 110, and the further heat generation of the semiconductor element moves to the substrate part 110, causing a rapid temperature change of the semiconductor element. And temperature rise is suppressed. Therefore, the response speed of the temperature change of the semi-semiconductor element becomes dull, the transient characteristics of the semiconductor device 10 are improved, and it is possible to suppress an excessive thermal load on the semiconductor element. When the forced air from the fan 9 is supplied, heat is removed from the first fin 112 or the second fin 113 on both sides of the semiconductor module 22, and the first fin 112 from the second fin 113. As a result, a space is generated in the heat storage capacity of the second fin 113 due to the promotion of the heat transfer to the air and the heat transfer from the second fin 113 to the air. Can be improved.

  Returning to FIG. 5, the plurality of semiconductor devices 10 constitute an assembly 30 s by being arranged on a plane. The plurality of semiconductor devices 10 are arranged in a matrix of 2 × 2 or more. The plurality of semiconductor devices 10 are arranged in a matrix having a row direction as a direction orthogonal to the ventilation direction and a column direction as the ventilation direction. The plurality of semiconductor devices 10 are preferably configured in two rows in order to suppress a temperature difference between the upstream row and the downstream row. In the illustrated embodiment, the six semiconductor devices 10 are arranged in a matrix of 2 rows × 3 columns. The six semiconductor devices 10 are arranged with the heat sink 11 in direct contact with no inclusions between them.

  6 and 7, the lower case 31, the lid portion 37, and the ventilation path forming members 32 and 33 constitute a case 30h that houses the assembly 30s. The lower case 31 is provided with a plurality of female screw portions 34b on the upper surface where the lid portion 37 is disposed. The lid portion 37 is fastened toward the lower case 31 by a plurality of mounting screws 36 b and is fixed to the lower case 31. The ventilation path forming members 32 and 33 are fastened to the lower case 31 by the mounting screws 36 a and are fixed to the lower case 31. Therefore, the case 30 h is configured so that the assembly 30 s can be tightened along the directions X and Y intersecting the stacking direction Z of the semiconductor module 22 and the heat sink 11. The attachment screw 36a and the female screw portion 34b provide a fastening means.

  When assembling the assembly 30s and the case 30h, the ventilation path forming members 32 and 33 are tightened toward the lower case 31 while tightening the assembly 30s. The lid portion 37 is tightened toward the lower case 31 while tightening the assembly 30s. Accordingly, the plurality of semiconductor devices 10 are supported by being sandwiched between at least one pair of opposed inner walls in the case 30h. In other words, the plurality of semiconductor devices 10 are housed in the case 30h in a pushed state. The case 30h tightly fastens the plurality of semiconductor devices 10 to such an extent that the case 30h does not move greatly due to vibration assumed in the vehicle.

  The case 30h applies pressure to the heat sink 11 along at least one of the directions X and Y. The pressure applied to the semiconductor device 10 by the case 30h in at least one of the directions X and Y is stronger than the pressure applied by the case 30h to the semiconductor device 10 in the direction Z. Instead, the pressure applied to the assembly 30s by the case 30h in the stacking direction Z of the semiconductor module 22 and the heat sink 11 may be zero. That is, the case 30h may fix the assembly 30s with only the heat sink 11 interposed therebetween. In these configurations, the case 30h mainly supports the assembly 30s with the heat sink 11 interposed therebetween. This configuration suppresses an undesirable change in the contact state between the semiconductor module 22 and the heat sink 11.

  In this embodiment, the inverter 1 constitutes a multiphase power converter. The inverter 1 includes six semiconductor devices 10. Each semiconductor device 10 includes one semiconductor module 22 and two heat sinks 11 mounted on both sides thereof. The semiconductor module 22 and the pair of heat sinks 11 are connected to each other by a leaf spring 13 that is a dedicated connecting device belonging only to them. The leaf spring 13 is configured so that heat can be transferred from the semiconductor module 22 to the heat sink 11 and that the semiconductor module 22 and the two heat sinks 11 can be handled as a single component. It is connected. Therefore, the heat transfer performance from the semiconductor module 22 to the heat sink 11 can be managed under the relationship between one semiconductor module 22 and a pair of heat sinks 11. For this reason, a desired level of heat transfer performance can be obtained between one semiconductor module 22 and the heat sink 11. In addition, a desired level of heat transfer performance can be obtained in all the semiconductor devices 10. For this reason, the fall of a partial heat transfer performance is suppressed.

  The plurality of semiconductor devices 10 are arranged in a matrix of 2 × 2 or more. Thereby, suppression of the difference in the heat dissipation from a heat sink and a compact arrangement | positioning can be made compatible. The plurality of semiconductor devices 10 are housed in a case and fixed. The plurality of semiconductor devices 10 are supported by being sandwiched between opposing wall surfaces of the case 30h. Thereby, the plurality of semiconductor devices 10 can be easily fixed.

  The semiconductor device 10 according to the present embodiment includes a semiconductor module 22 having a built-in semiconductor element and having a pair of opposed main surfaces 221 and 222 and a heat sink 11. The heat sink 11 includes a substrate portion 110 that is thermally coupled to the main surfaces 221 and 222 of the semiconductor module 22, and a substrate portion that forms rows at intervals in the thickness direction on the opposite side of the main surfaces 221 and 222. The plurality of first fins 112 projecting from 110 are arranged on both sides of the semiconductor module 22. The heat sink 11 is a fin that protrudes from the substrate part 110 on the outer side of the first fins 112 located on the outermost sides in both thickness directions, and has a thick part with a thickness dimension larger than that of the first fins 112. A second fin 113 is further provided.

  According to the above configuration, the second fin 113 has a thicker portion having a larger thickness dimension than the inner first fin 112, so that the second fin 113 is stronger than the first fin 112. And heat capacity to store heat is large. For this reason, the improvement of the intensity | strength of the fin in the heat sink 11 and improvement of said heat mass function can be aimed at. Thereby, deformation of the first fin 112 that may occur due to a load applied to the semiconductor device 10 in an assembling process or the like can be suppressed, and a state in which a desired cooling effect can be exerted can be ensured. The heat dissipation characteristic which suppresses can be improved.

  Further, the second fin 113 also exhibits strength against the force that the thick portion receives from the inner surface of the lower case 31 with respect to the load applied from the lower case 31 and the adjacent semiconductor device 10 in the fin protruding direction Z. Moreover, since the adjacent thick portions are in contact with each other, the strength is exhibited. For this reason, in both the thickness direction Y and the fin protruding direction Z, it has a function of protecting the first fin 112 in strength and suppresses deformation. When the deformation of the first fins 112 can be suppressed in this way, the air passages that are the gaps formed between the first fins 112 are maintained at a predetermined size. For this reason, there is no portion where the cooling air is difficult to flow because the ventilation resistance increases, and each semiconductor device 10 can exhibit a desired cooling performance, and the life of the semiconductor device 10 can be extended. Further, if the deformation of the first fin 112 can be suppressed in this way, it is difficult for assembly problems to occur when the semiconductor device 10 is housed in the case of the inverter circuit unit 30, which contributes to an improvement in productivity.

  Furthermore, according to the semiconductor device 10, the heat sink 11 has a double-sided cooling structure that can receive heat from both main surfaces of the semiconductor module 22, so that it is excellent in combination with the improvement of the transient characteristics due to the thick part of the second fin 113. Exhibits excellent heat dissipation performance.

  In the semiconductor device 10, the second fin 113 is smaller in length than the first fin 112 in the direction X perpendicular to the thickness direction Y and parallel to the main surface of the semiconductor module. A leaf spring 13 (elastic member) that urges the finless portion 110a where the second fin 113 does not protrude in the substrate portion 110 of the heat sink 11 on both sides of the semiconductor module 22 with elastic force. Is provided.

  According to this configuration, the second fin 113 has a shorter length in the direction parallel to the main surfaces 221 and 222 of the semiconductor module 22 than the first fin 112. It is possible to construct a space in which the fin 113 does not protrude. Further, since the leaf spring 13 for biasing the force for sandwiching the semiconductor module 22 is provided in the space, the fin strength and the heat mass function are improved, and the mountability for effectively arranging the thermal bonding means between the semiconductor module 22 and the heat sink 11 is provided. Can be realized at the same time. Therefore, the semiconductor device 10 having both improved fin strength and heat mass function and downsizing of the device can be obtained.

  Further, in the semiconductor device 10, the finless portion 110 a where the second fin 113 does not protrude in the substrate portion 110 of the heat sink 11 is a direction perpendicular to the thickness direction Y and parallel to the main surfaces 221 and 222 of the semiconductor module 22. It is provided on both sides of the second fin 113 in the direction.

  According to this configuration, the second fin 113 is positioned at the center in the direction parallel to the main surfaces 221 and 222 by providing the portions where the second fin 113 does not protrude on both sides of the second fin 113. Therefore, the heat generated from the semiconductor module 22 is more easily transferred to the second fin 113 more efficiently. Therefore, the semiconductor device 10 can more efficiently exhibit the heat mass function for temporarily storing heat generated from the semiconductor module 22. Moreover, since the force which pinches | interposes the semiconductor module 22 with the leaf | plate spring 13 is provided to the outer side of the main-body part 226 of the semiconductor module 22, the grip force by the leaf | plate spring 13 can be supplied efficiently. As a result, good adhesion between the semiconductor module 22 and the heat sink 11 can be obtained and the thermal resistance between them can be reduced, so that the cooling effect of the semiconductor module 22 can be improved.

  Further, according to the present embodiment, in the three-phase inverter circuit in which the pair of semiconductor modules 22 forming the upper and lower arms in the same phase are arranged adjacent to each other and the six semiconductor modules 22 form each arm, The heat of the individual semiconductor modules 22 is radiated into the air via the heat sink 11.

  According to this configuration, the pair of semiconductor devices 10 forming the upper and lower arms in the same phase have improved strength and excellent heat dissipation characteristics in the heat sink 11 disposed on both sides of the semiconductor module 22, so the heat sink 11 is improved by improving the heat dissipation characteristics. Can be miniaturized. Further, since the semiconductor device 10 can be arranged at a high density by improving the strength, the case of the inverter circuit unit 30 in which the semiconductor device 10 is arranged can be downsized, and the vibration of the semiconductor device 10 can be suppressed by the high density arrangement. Therefore, it is possible to reduce the occurrence of device failures and malfunctions. In particular, in a high-vibration environment such as an electric vehicle, the fins may be damaged due to gaps in the semiconductor device 10, which can be prevented and a highly reliable product can be provided. Further, since these six semiconductor devices can be constituted by one type of semiconductor device 10, the number of parts can be reduced, and the manufacturing cost and the management cost can be reduced.

(Second Embodiment)
FIG. 8 is a perspective view of an inverter circuit unit 30A according to the second embodiment of the present invention. The inverter circuit unit 30A has a box-shaped case 30h. The case 30h has six plate-like members constituting six surfaces and a plurality of mounting screws as connecting members for connecting them. The case 30 h includes a bottom plate 30 h 1 and a top plate 30 h 2 as the lid portion 37. The bottom plate 30h1 and the top plate 30h2 are provided with a plurality of openings for penetrating the terminals. The case 30h has left and right side plates 30h3 and 30h4. Further, the case 30h includes grid plates 30h5 and 30h6 as the air passage forming members 32 and 33.

  FIG. 9 is a perspective view showing an exploded state of the assembly 30s and the elastic member 30e according to the second embodiment. FIG. 10 is a cross-sectional view of the case according to the second embodiment. Between the assembly 30s and the case 30h, an elastic support member 30e that elastically supports the assembly 30s in at least one axial direction is provided. In the illustrated embodiment, an elastic support member 30e is provided in the triaxial direction. The triaxial directions correspond to the depth direction X, the height direction Y, and the lateral direction Z as the inverter circuit unit 30A. Between the assembly 30s and the case 30h, a plate-like elastic member 30e that provides the elastic support member 30e is disposed. The elastic member 30e is also an electrical insulating material. The elastic member 30e is made of resin or rubber. An elastic member 30e1 is disposed between the assembly 30s and the bottom plate 30h1. The elastic member 30e1 has a size that extends across the lower surfaces of all the semiconductor devices 10. The elastic member 30e1 has a plurality of holes for penetrating the terminals. An elastic member 30e2 is disposed between the assembly 30s and the top plate 30h2. The elastic member 30e2 has a size that extends over the upper surfaces of all the semiconductor devices 10. The elastic member 30e2 has a plurality of holes for penetrating the terminals. An elastic member 30e3 is disposed between the assembly 30s and the side plate 30h3. An elastic member 30e4 is disposed between the assembly 30s and the side plate 30h4 of the lower case 31. An elastic member 30e5 is disposed between the assembly 30s and the grid plate 30h5. An elastic member 30e6 is disposed between the assembly 30s and the grid plate 30h6. The elastic members 30e5 and 30e6 have openings corresponding to the ventilation openings 32b. As a result, the elastic members 30e are arranged on the six surfaces of the rectangular parallelepiped assembly 30s.

  FIG. 11 is a front view showing an exploded state of the assembly 30s and the elastic member 30e according to the second embodiment. The grid plate 30h5 has an outer frame part and a partition part 32a, and provides a plurality of ventilation openings 32b. The partition portion 32a has a width substantially corresponding to the semiconductor module 22 and the pair of substrate portions 110 on both sides thereof. The elastic member 30e5 has a partition portion corresponding to the partition portion 32a, and forms a ventilation port corresponding to the ventilation port 32b.

  FIG. 12 is a side view showing an exploded state of the case 30h according to the second embodiment. FIG. 13 is a front view showing an exploded state of the case 30h according to the second embodiment. The side plates 30h3 and 30h4 are provided with a plurality of female screw portions for receiving the mounting screws 36a and 36b. Furthermore, the grid plates 30h5 and 30h6 are provided with female thread portions for receiving the mounting screws 36b corresponding to the partition members 32a.

  The grid plate 30h5 is fixed to the side plates 30h3 and 30h4 by being tightened toward the side plates 30h3 and 30h4 by the mounting screws 36a. The grid plate 30h6 is fixed to the side plates 30h3 and 30h4 by being tightened toward the side plates 30h3 and 30h4 by the mounting screws 36a. The mounting screw 36a and the female screw provide a fastening means for fastening the grid plates 30h5 and 30h6.

  The bottom plate 30h1 is fixed to the side plates 30h3 and 30h4 by being tightened toward the side plates 30h3 and 30h4 by the mounting screws 36b. The top plate 30h2 is fixed to the side plates 30h3 and 30h4 by being tightened toward the side plates 30h3 and 30h4 by the mounting screws 36b. The mounting screw 36b and the female screw provide a fastening means for fastening the bottom plate 30h1 and the top plate 30h2.

  The bottom plate 30h1, the top plate 30h2, and the assembly 30s compress the elastic members 30e1 and 30e2. Further, the side plate 30h3, the side plate 30h4, and the assembly 30s slightly compress the elastic members 30e3 and 30e4. Furthermore, the grid plate 30h5, the grid plate 30h6, and the assembly 30s compress the elastic members 30e5 and 30e6. As a result, all the elastic members 30e are elastically deformed in the compression direction. Therefore, the plurality of semiconductor devices 10 are housed in the case 30h in a pushed state. In other words, the assembly 30s is elastically supported in the case 30h. The elastic member 30e tightly tightens the assembly 30s to such an extent that the assembly 30s does not move greatly due to vibration assumed in the vehicle. The amount of compression of the elastic members 30e3, 30e4 can be reduced compared to the other elastic members 30e1, 30e2, 30e5, 30e6.

  The assembling method of the case 30h and the assembly 30s can take various procedures. For example, first, the bottom plate 30h1, the side plate 30h3, and the side plate 30h4 are connected. Next, the assembly 30s is inserted between the side plates 30h3 and 30h4 while the elastic members 30e3 and 30e4 are slightly compressed. Next, the grid plates 30h5 and 30h6 are tightened toward the side plates 30h3 and 30h4 while the elastic members 30e5 and 30e6 are slightly compressed. Finally, the top plate 30h2 is tightened toward the side plates 30h3 and 30h4 while the elastic members 30e1 and 30e2 are slightly compressed.

  In this configuration, the plurality of semiconductor devices 10 are sandwiched and supported between at least one of the bottom plate 30h1 and the top plate 30h2 and between the grid plate 30h5 and the grid plate 30h6. The case 30h fixes the assembly 30s with the heat sink 11 sandwiched between them. The case 30h applies pressure to the heat sink 11 along at least one of the directions X and Y. The direction in which the side plate 30 h 3 and the side plate 30 h 4 face each other is the stacking direction Z of the semiconductor module 22 and the heat sink 11. The pressure applied to the semiconductor device 10 in at least one of the directions X and Y in which the case 30 h intersects the stacking direction Z is stronger than the pressure applied to the semiconductor device 10 in the stacking direction Z from the case 30 h. In this configuration, the case 30h elastically supports the assembly 30s mainly with the heat sink 11 interposed therebetween. This configuration suppresses an undesirable change in the contact state between the semiconductor module 22 and the heat sink 11.

  According to this embodiment, the same effect as the above-described embodiment can be obtained. In addition, the plurality of semiconductor devices 10 are elastically supported in the case 30h by the elastic member 30e. Thereby, the plurality of semiconductor devices 10 can be stably fixed over a long period of time.

(Third embodiment)
FIG. 14 is a front view of a ventilation path forming member according to a third embodiment of the present invention. FIG. 15 is a cross-sectional view of the ventilation path forming member according to the third embodiment. FIG. 16 is a longitudinal sectional view of a ventilation path forming member according to the third embodiment. As illustrated, the grid plates 30h5 and 30h6 as the ventilation path forming member may include a partition portion 332a having a trapezoidal cross-sectional shape. The ventilation port 332b defines a funnel-shaped air passage. In the grid plate 30h5 arranged on the upstream side, air flow resistance can be suppressed by flowing air as illustrated.

  FIG. 17 is a front view of the ventilation path forming member according to the third embodiment. The opening areas of the plurality of ventilation openings 332b are set corresponding to the ventilation path cross-sectional area of the semiconductor device 10 in the case 30h. In this embodiment, the width W11 is set to be approximately equal to twice the width W12 or slightly larger than twice the width W12. The width W11 is the width of the ventilation port 332b that opens across the two semiconductor devices 10 and is located inside. The width W12 is the width of the ventilation port 332b that opens corresponding to only one semiconductor device 10 and is located at the end. The opening areas of the ventilation holes 332b of the grid plates 30h5 and 30h6 can be adjusted in order to promote cooling of the plurality of semiconductor devices 10 or to suppress a temperature difference between the plurality of semiconductor devices 10.

(Fourth embodiment)
FIG. 18 is a front view of a ventilation path forming member according to the fourth embodiment of the present invention. In this embodiment, the width W21 is set to be smaller than twice the width W22. This configuration is effective for relatively increasing the air volume at the vent 432b located at the end.

(Fifth embodiment)
FIG. 19 is a front view of a ventilation path forming member according to a fifth embodiment of the present invention. In this embodiment, the width W31 is set to be clearly larger than twice the width W32. This configuration is effective for relatively reducing the air volume of the vent hole 532b located at the end.

(Sixth embodiment)
A semiconductor device 10C of the sixth embodiment will be described with reference to FIG. FIG. 20 is a perspective view showing the configuration of the semiconductor device 10C. In FIG. 20, the components denoted by the same reference numerals are the same as those in the first embodiment, and have the same effects. In addition, the semiconductor device 10C of the sixth embodiment is the same as that of the first embodiment except for the configuration including the two semiconductor modules 22, and has the same effects.

  The semiconductor device 10C has a configuration in which two semiconductor modules 22 are sandwiched between two heat sinks 11C arranged in a direction X parallel to the main surface. Each heat sink 11C protrudes in a right-angle direction (corresponding to the fin protruding direction Z) from the plate-like substrate portion 110 thermally coupled to the main surfaces 221 and 222 of the two semiconductor modules 22. A plurality of first fins 112 and two second fins 113 provided on both upper and lower ends are provided. Three portions of the substrate 110 where the second fins 113 do not protrude are provided at both the upper and lower ends of the heat sink 11C, and leaf springs 13 are attached to all of these six locations, and two portions are provided by elastic force. The force sandwiching the semiconductor module 22 is energized.

  With the above configuration, the three semiconductor devices 10 </ b> C are inserted and installed in a predetermined position from above in the case of the inverter circuit unit 30. The three semiconductor devices 10C are arranged close to each other in alignment in the horizontal direction (corresponding to the fin projecting direction Z), and constitute a U phase, a V phase, and a W phase, respectively, and the two semiconductor modules 22 of each semiconductor device 10C. Are arranged to form an upper arm and a lower arm of the same phase, and then electrically connected by wire.

  Also in this embodiment, the heat transfer performance from the semiconductor module 22 to the heat sink 11C can be managed under the relationship between the two semiconductor modules 22 and the pair of heat sinks 11C. For this reason, a desirable level of heat transfer performance can be obtained between the semiconductor module 22 and the heat sink 11C. In addition, a desired level of heat transfer performance can be obtained in all the semiconductor devices 10C. For this reason, the fall of a partial heat transfer performance is suppressed. The plurality of semiconductor devices 10C are arranged so that the plurality of semiconductor modules 22 are arranged in a matrix of 2 × 2 or more. Thereby, suppression of the difference in the heat dissipation from the several semiconductor module 22 and the compact arrangement | positioning can be made compatible. The plurality of semiconductor devices 10C are housed and fixed in the case 30h of the preceding embodiment. Thereby, the plurality of semiconductor devices 10C can be easily and stably fixed.

(Other embodiments)
The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

  The structure of the said embodiment is an illustration to the last, Comprising: The scope of the present invention is not limited to the range of these description. The scope of the present invention is indicated by the description of the scope of claims, and further includes meanings equivalent to the description of the scope of claims and all modifications within the scope.

  For example, a member having elasticity or a member having electrical insulation may be provided between the six semiconductor devices 10. Moreover, the elastic member 30e may be comprised with a leaf | plate spring and an electrically insulating film. A pair of elastic members arranged in parallel with respect to one axial direction can be provided only on one side. For example, the elastic member 30e1 and the elastic member 30e2 make a pair. The elastic member 30e1 may be omitted, and only the elastic member 30e2 may be provided. Further, the elastic support member may be disposed only in the biaxial direction. Further, the elastic support member may be arranged only in the uniaxial direction. The partial configurations shown in the plurality of embodiments can be combined with or replaced with the configurations of the other embodiments. For example, the semiconductor device 10C of the sixth embodiment can be combined with any of the preceding embodiments.

  In the above embodiment, a high output IGBT is formed as a semiconductor chip, but a semiconductor chip in which a low output MOSFET, JFET, or the like is formed may be used.

  The use of the motor driven by the inverter device of the above embodiment is not limited to vehicle travel, but includes power generation, engine starting, driving of auxiliary equipment such as a compressor, and the like. Or an inverter device loaded in a plurality of stages may be provided.

DESCRIPTION OF SYMBOLS 1 ... Inverter device 10, 10C ... Semiconductor device 11, 11C ... Heat sink 13 ... Leaf spring (connection device)
20a to 20f ... IGBT (semiconductor element)
21a-21f ... Free wheeling diode (semiconductor element)
22, 22a-22f ... Semiconductor module 30h ... Case 31 ... Lower case 37 ... Lid 110 ... Substrate part 110a ... No fin part (part)
DESCRIPTION OF SYMBOLS 112 ... 1st fin 113 ... 2nd fin 221, 222 ... Main surface (a pair of main surface)

Claims (6)

A plurality of semiconductor devices;
A case for housing the plurality of semiconductor devices,
Each semiconductor device
A semiconductor module containing a semiconductor element and having a pair of opposing main surfaces;
Two heat sinks disposed on both sides of the semiconductor module;
A connection device for connecting the semiconductor module and the two heat sinks so that heat transfer from the semiconductor module to the two heat sinks is possible;
The case has a vent hole for housing the plurality of semiconductor devices and supplying air to the heat sink. Each of the semiconductor modules includes a switching element that controls power,
The power converter according to claim 1, wherein the power converter includes at least six of the semiconductor devices.   The power conversion device according to claim 1, wherein the semiconductor modules are arranged in a matrix of 2 × 2 or more in the case.   4. The power conversion device according to claim 1, wherein the semiconductor device is supported by being sandwiched between opposing wall surfaces of the case in the case. 5.   5. The power conversion device according to claim 1, further comprising an elastic support member provided between the semiconductor device and the case and elastically supporting the semiconductor device.   6. The power conversion device according to claim 4, wherein the case sandwiches the semiconductor device in a direction crossing a stacking direction of the semiconductor module and the heat sink.

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