JP2011157297A - Diethylzinc composition, method for thermal stabilization and compound for thermal stabilization - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance thermal stabilization of diethylzinc used for a polymerization catalyst, a reagent for organic syntheses, a raw material for the formation of a zinc oxide film by an MOCVD method or the like, or the like, and to provide a diethylzinc composition that exhibits excellent thermal stability causing no deposition of a zinc metal particle after longtime handling and improves a problem of remaining of diethylzinc when used and a method for thermally stabilizing diethylzinc. <P>SOLUTION: The diethylzinc composition comprises diethylzinc and, added thereto as an additive, a naphthalene compound having a melting point or a freezing point of 85°C or lower. The method for thermally stabilizing diethylzinc is also provided. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a diethylzinc composition excellent in thermal stability, a method for thermal stabilization of a diethylzinc composition, and a compound for thermal stabilization.

  Diethyl zinc is conventionally used as a reaction reagent for organic synthesis in polymerization catalyst applications such as polyethylene oxide and polypropylene oxide, and in the production of intermediates such as pharmaceuticals and functional materials, and is known as an extremely useful industrial material. ing.

  In recent years, a method of forming a zinc oxide thin film by a technique called MOCVD (Metal Organic Chemical Vapor Deposition) using diethyl zinc as a raw material and water vapor as an oxidizing agent has been studied. The zinc oxide thin film obtained by this MOCVD method has various functions in solar cells such as CIGS solar cell buffer layer, transparent conductive film, dye-sensitized solar cell electrode film, thin-film Si solar cell intermediate layer, and transparent conductive film. It is used in various functional films such as films, photocatalytic films, ultraviolet cut films, infrared reflective films, and antistatic films, compound semiconductor light emitting devices, electronic devices such as thin film transistors, etc., and has a wide range of uses.

  It is known that diethyl zinc is gradually decomposed and metal zinc particles are deposited when heat is applied (for example, see Non-Patent Document 1). Therefore, handling of diethyl zinc has problems such as a decrease in product purity due to precipitation of metal zinc particles generated by pyrolysis, contamination of storage containers, and blockage of manufacturing equipment piping.

  As a method for solving the above-mentioned problems related to the precipitation of metal zinc particles generated by pyrolysis, for example, a method of adding a compound such as anthracene, acenaphthene, or acenaphthylene to obtain a composition in which diethyl zinc is stabilized is known. (For example, refer to Patent Documents 1 to 3).

U.S. Pat. No. 4,385,003 U.S. Pat. No. 4,402,880 U.S. Pat. No. 4,407,758

Yasuo Kuniya et al. , Applied Organometallic Chemistry, 5, 337-347, published in 1991

As disclosed in Patent Documents 1 to 3, even if anthracene, acenaphthene, and acenaphthylene are added, diethylzinc cannot be sufficiently stabilized, and diethylzinc having higher thermal stability is required.
Anthracene, acenaphthene, and acenaphthylene have high melting points of 216 ° C., 93 ° C., and 90 to 95 ° C., and are solid compounds at room temperature around 25 ° C., which is a general handling temperature. In general, a substance having a high melting point has a low vapor pressure, and in the use of diethyl zinc in CVD film formation or the like, when supplying diethyl zinc as a saturated gas in the carrier gas by bubbling with a carrier gas, Additives such as anthracene, acenaphthene, and acenaphthylene are likely to remain in diethyl zinc without being vaporized.

Furthermore, when preparing a diethylzinc composition using these solid compounds as additives, the additives are transferred using a solid charging machine or the like, but in the case of troubles such as blocking of the additives during the transfer. Therefore, it is necessary to take measures to prevent contamination of diethyl zinc with impurities.
When removing the additive in the case of trouble during the transfer, in order to prevent contamination of the impurities to the diethylzinc, when taking measures such as heating and melting the additive itself, It is desirable that the compound has a lower melting point.
From this point, it is desirable that the diethylzinc additive is a compound having a lower melting point.

  That is, the present invention improves the thermal stability of diethyl zinc used as a raw material for producing a zinc oxide thin film by a polymerization catalyst, an organic synthesis reagent, MOCVD method, etc., and does not precipitate metallic zinc particles even when handled for a long time. It is an object of the present invention to provide a diethylzinc composition and a method for thermal stabilization of diethylzinc that are excellent in reducing the residual problem when using diethylzinc, and the melting point of the additive is the aforementioned known additive. Lower than that of the additive, that is, a compound having a melting point or freezing point of the additive of 85 ° C. or lower.

  As a result of diligent research and development to solve the above-mentioned problems, the present inventor obtained a naphthalene compound having a melting point or freezing point of 85 ° C. or lower as diethyl zinc (CAS No. 557-20-0), the thermal stability was remarkably improved by using the composition coexisting with the composition, and the present invention was completed.

  The diethylzinc composition according to the present invention is a diethylzinc composition obtained by adding a naphthalene compound having a melting point or freezing point of 85 ° C. or lower as a compound having a melting point or freezing point of 85 ° C. or lower to diethyl zinc. is there.

  In the diethylzinc composition according to the present invention, the naphthalene compound described above is one selected from the group consisting of compounds represented by the following general formula (1), general formula (2) and general formula (3). Or two or more compounds.

(In the formula (1), the formula (2) and the formula (3), each R is independently hydrogen, a linear or branched alkyl group having 1 to 8 carbon atoms (the alkyl group includes an isopropyl group), A linear or branched alkenyl group having 1 to 8 carbon atoms and an allyl group having 6 to 14 carbon atoms).

  Examples of the naphthalene compound having a melting point or a freezing point of 85 ° C. or lower include, for example, naphthalene itself or those having an alkyl group in the side chain as examples of formula (1) and formula (2), for example, 2-methylnaphthalene 2,6-diisopropylnaphthalene, alkenyl group, etc., those having an allyl group, 1-styrylnaphthalene, etc., as an example of formula (3) which is a naphthalene compound having oxygen, for example, a compound such as 2-methoxynaphthalene Can be mentioned.

Among these aromatic compounds, the above-mentioned naphthalene, 2-methylnaphthalene, 2,6-diisopropylnaphthalene, and the like, which have a simple structure and can be easily obtained industrially, have a high effect. 1-styrylnaphthalene and 2-methoxynaphthalene can be preferably used.
These naphthalene compounds have a melting point of 85 ° C. or lower.

The additive used in the present invention can provide a sufficient effect when added alone, but a plurality of additives may be used in combination.
Here, the addition amount of the additive is not particularly limited as long as the performance of diethyl zinc is maintained and a thermal stabilization effect is obtained, but usually 100 ppm to 20 wt%, preferably with respect to diethyl zinc. Is 500 ppm to 10 wt%, more preferably 2000 ppm to 5 wt%, a diethylzinc composition having excellent thermal stability can be obtained.

  If the amount of the additive of the present invention is too small, a sufficient effect of improving the thermal stability may not be obtained, and if it is too large, the effect of increasing the amount of addition may not be obtained. It is desirable to add an appropriate amount to obtain the desired effect of stability.

  Diethyl zinc used in the present invention is generally known as an industrial material used as a reaction reagent for organic synthesis in polymerization catalyst applications such as polyethylene oxide and polypropylene oxide, and in the production of intermediates such as pharmaceuticals and functional materials. What is being used can be used.

  In the present invention, it is used in a method of forming a zinc oxide thin film by MOCVD or the like, and includes a buffer layer for CIGS solar cells, a transparent conductive film, an electrode film for dye-sensitized solar cells, an intermediate layer for thin-film Si solar cells, Various functional films in solar cells such as transparent conductive films, photocatalytic films, ultraviolet cut films, infrared reflective films, various functional films such as antistatic films, compound semiconductor light emitting devices, electronic devices such as thin film transistors, etc. Diethyl zinc having a purity higher than that of industrial materials can also be used.

  In preparing the diethylzinc composition of the present invention, diethylzinc and the additive of the present invention may be mixed, and there is no particular limitation on the method of addition, for example, the above-mentioned additive is added to diethylzinc. .

For example, in order to improve storage stability, a method of adding an additive to diethyl zinc in advance can be used.
Further, for example, when used for a reaction or the like, an additive can be added to diethyl zinc immediately before use.

  In addition, the temperature for preparing the diethylzinc composition of the present invention is preferably 70 ° C. or less, which is less affected by the thermal decomposition of diethylzinc. Usually, the composition of the present invention can be prepared at -20 ° C to 35 ° C. Also, the pressure is not particularly limited. Except for special cases such as reaction, diethylzinc and the composition of the present invention can be usually prepared near atmospheric pressure, such as 0.1013 MPa.

  The equipment used and the atmosphere used in equipment such as storage / transport containers, storage tanks, and piping for the diethyl zinc composition of the present invention can be used as they are. For example, the material of the above-mentioned equipment can be a metal such as SUS, carbon steel, titanium, or Hastelloy, or a resin such as Teflon (registered trademark) or fluorine rubber. In addition, an inert gas such as nitrogen, helium, or argon can be used in the same manner as diethyl zinc.

  The diethyl zinc composition of the present invention can be used by dissolving in a known solvent that can be used when diethyl zinc is used. Examples of the solvent include, for example, saturated hydrocarbons such as pentane, hexane, heptane and octane, hydrocarbon compounds such as aromatic hydrocarbons such as benzene, toluene and xylene, diethyl ether, diisopropyl ether, tetrahydrofuran, dioxane and diglyme. And ether compounds such as

  Examples of the use of the diethylzinc composition of the present invention include use as a polymerization catalyst such as polyethylene oxide and polypropylene oxide, use as a reaction reagent for organic synthesis in the production of intermediates such as pharmaceuticals and functional materials, , Used in a method of forming a zinc oxide thin film by MOCVD method, etc., and CIGS solar cell buffer layer, transparent conductive film, dye-sensitized solar cell electrode film, thin film Si solar cell intermediate layer, transparent conductive film, etc. Various functional films such as various functional films, photocatalytic films, ultraviolet cut films, infrared reflective films, antistatic films, etc. in batteries, oxide forming applications such as compound semiconductor light emitting devices, electronic devices such as thin film transistors, etc., ZnS List the same applications where diethyl zinc has been used so far, such as thin film formation applications for II-VI electronic devices. Can.

  The diethyl zinc composition to which the additive of the present invention is added is excellent in thermal stability, and the precipitation of metallic zinc particles generated by the thermal decomposition of diethyl zinc is extremely small. As a result, it is possible to prevent problems such as a decrease in product purity, contamination of storage containers, and blockage of manufacturing equipment piping.

  EXAMPLES The present invention will be described in more detail with reference to examples below, but these examples do not limit the present invention.

[measuring equipment]
DSC measurement (Differential Scanning Calorimetry) was performed using DSC6200 (manufactured by Seiko Instruments Inc.).

[Preparation of diethyl zinc composition]
Diethyl zinc (manufactured by Tosoh Finechem Co., Ltd.) and various additives (commercial reagents) were weighed into a glass container at a predetermined concentration at room temperature in a nitrogen atmosphere. The additive was dissolved in diethyl zinc to prepare a diethyl zinc composition.
The addition rate (wt%) of the additive to diethyl zinc was defined by the following formula.
Addition rate (% by weight) of additive = (additive weight / (additive weight + diethyl zinc weight)) × 100

  About the diethyl zinc composition prepared by the above-mentioned method, DSC measurement was performed and the thermal stability effect of the additive was evaluated. It shows that the higher the initial exothermic temperature of the DSC measurement, the higher the heat stabilization effect for diethyl zinc.

[Reference Example 1]
[Thermal stability test by DSC measurement of diethyl zinc]
Diethyl zinc was weighed and sealed in a DSC cell made of SUS under a nitrogen atmosphere. The obtained sample was subjected to DSC measurement, and thermal analysis measurement was performed at a temperature increase rate of 10 ° C./min with a temperature range of 30 to 450 ° C. The decomposition temperature of each sample is observed at the initial exothermic temperature of DSC measurement. Table 1 shows the initial exothermic temperature of a sample containing only diethyl zinc with no additive added.

[Examples 1 to 5]
[Thermal stability test by DSC measurement of diethyl zinc composition]
In the same manner as in Reference Example 1, naphthalene, 2-methylnaphthalene, 2,6-diisopropylnaphthalene, 1-styrylnaphthalene and 2-methoxynaphthalene were used as naphthalene compounds having a melting point or freezing point of 85 ° C. or lower in a nitrogen atmosphere. The added diethylzinc composition was weighed and sealed in a SUS DSC cell. The obtained sample was subjected to DSC measurement, and the same thermal analysis measurement as in Reference Example 1 was carried out at a rate of temperature increase of 10 ° C./min with 30 to 450 ° C. as the measurement temperature range. Table 1 shows the initial heat generation temperature of each sample.

  The initial exothermic temperature of the sample of diethyl zinc composition to which various additives of the present invention were added was higher than the initial exothermic temperature of the sample of only diethyl zinc obtained in the reference example, and the composition of the present invention The decomposition start temperature is higher than that of the sample alone. From this result, the high thermal stability of the diethyl zinc composition to which the additive was added was confirmed. The melting points of these additives are known as naphthalene: 80 ° C, 2-methylnaphthalene: 31 ° C, 2,6-diisopropylnaphthalene: 70 ° C, 1-styrylnaphthalene: 70 ° C, and 2-methoxynaphthalene: 73 ° C. Lower than the melting point of the additive.

[Comparative Examples 1-3]
In the same manner as in Examples 1 to 5, the same study was performed on a diethyl zinc composition to which anthracene, acenaphthene, and acenaphthylene, which are compounds described in Patent Documents 1 to 3, were added. Table 1 shows the initial heat generation temperature of each sample.

  Among these samples, anthracene and acenaphthene are lower than the initial exothermic temperature of the sample of the diethyl zinc composition to which the additive of the present invention is added, and the composition to which the existing additive is added is more than the composition of the present invention. Thermal stability was poor. The diethylzinc composition added with acenaphthylene has a slightly higher thermal stability effect than the additive of the present invention. The melting points of these known additives are anthracene: 216 ° C., acenaphthene: 93 ° C., acenaphthylene. 90-95 degreeC and all are higher than the additive of this invention.

Claims (9)

  A diethyl zinc composition in which a naphthalene compound having a melting point or a freezing point of 85 ° C. or lower is added as an additive to diethyl zinc. The diethyl zinc composition according to claim 1, wherein the naphthalene compound having a melting point or a freezing point of 85 ° C or lower is composed of a compound represented by the following general formula (1), general formula (2) and general formula (3). A diethylzinc composition, which is one or more compounds selected from the group.

(In the formula (1), the formula (2) and the formula (3), each R is independently hydrogen, a linear or branched alkyl group having 1 to 8 carbon atoms (the alkyl group includes an isopropyl group), A linear or branched alkenyl group having 1 to 8 carbon atoms and an allyl group having 6 to 14 carbon atoms).   The diethyl zinc composition according to claim 1 or 2, wherein the additive is selected from the group consisting of naphthalene, 2-methylnaphthalene, 2,6-diisopropylnaphthalene, 1-styrylnaphthalene and 2-methoxynaphthalene. A diethylzinc composition characterized in that it is one or more compounds.   The diethyl zinc composition in any one of Claims 1-3 whose addition rate of the additive to diethyl zinc is 100 ppm-20 wt%.   The diethylzinc composition according to any one of claims 1 to 4, wherein the saturated and / or unsaturated hydrocarbons having 5 to 25 carbon atoms and / or carbon atoms of 6 kinds different from the additive constituting the diethylzinc composition. A diethylzinc composition characterized in that -30 aromatic hydrocarbon compounds or ether compounds coexist.   A method for improving the thermal stability of diethylzinc, wherein the compound according to any one of claims 1 to 3 is used as an additive and added at the addition rate according to claim 4. Heat stabilization method.   7. The method for stabilizing diethylzinc according to claim 6, wherein the saturated and / or unsaturated hydrocarbon having 5 to 25 carbon atoms and a fragrance having 6 to 30 carbon atoms are different from the additive constituting the diethylzinc composition. A method for thermally stabilizing diethylzinc, characterized in that an aromatic hydrocarbon compound or an ether compound is allowed to coexist in diethylzinc.   A compound to be added to improve the thermal stability of diethyl zinc, the compound for heat stabilization having the structure according to any one of claims 1 to 3.   The compound for thermal stabilization according to claim 8, wherein the saturated and / or unsaturated hydrocarbon having 5 to 25 carbon atoms and an aromatic having 6 to 30 carbon atoms are different from the additive constituting the diethyl zinc composition. A compound for thermal stabilization, wherein a hydrocarbon compound or an ether compound coexists.