JP2011155121A - Substrate, method for manufacturing substrate, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device which is manufactured by flip-chip mounting. <P>SOLUTION: A substrate 100 comprises a base material 11 on which several electrodes 12 and a solid conductor 101 are formed. The solid conductor 101 is formed on the base material 11 so that it may cover the whole region of a large-sized region which is a region larger by a predetermined size than an ACF region of the base material 11 where an ACF (Anisotropic Conductive Film) is bonded for mounting a semiconductor chip except an electrode region of the base material 11 where the electrodes 12 are formed and its surroundings. The manufacturing method can be applied to the case or the like that the semiconductor device is manufactured by flip-chip mounting. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate, a method for manufacturing a substrate, and a semiconductor device, and more particularly, for example, a substrate capable of improving the reliability of a semiconductor device manufactured by flip-chip mounting, and a method for manufacturing the substrate. And relates to a semiconductor device.

  As a bonding method for mounting a semiconductor chip such as an IC (Integrated Circuit) bare chip on a substrate, there is, for example, flip chip mounting.

  In flip chip mounting, an IC bare chip is mounted on a substrate so that bump electrodes, which are protruding electrodes, provided on the IC bare chip are electrically connected to electrodes provided on the substrate.

  As a flip chip mounting method, for example, there is a mounting method using an ACF (Anisotropic Conductive Film) (see, for example, Patent Documents 1 and 2).

  FIG. 1 is a diagram for explaining an example of a conventional mounting method using an ACF.

  In the mounting method of FIG. 1, before the IC bare chip 30 is mounted on the substrate 10 on which the IC bare chip 30 is mounted, temporary bonding is performed in which the ACF 21 is attached to the substrate 10 in advance, and then the IC bare chip 30 is heated. The main pressure bonding is performed by pressure bonding.

  That is, FIG. 1A is a cross-sectional view showing the substrate 10.

  The substrate 10 includes a base material 11, an electrode 12, and necessary conductors 13.

  The base material 11 is, for example, a flat plate of an insulator having a flat plate shape, and is one surface of two surfaces of the flat plate as the base material 11, for example, an upper surface in the drawing (hereinafter also referred to as a surface). A plurality of electrodes 12 that are electrically connected to the IC bare chip 30 are formed.

  A necessary conductor 13 is formed on a lower surface (hereinafter also referred to as a back surface) in the figure, which is a surface opposite to the front surface of the flat plate as the base material 11. The conductor 13 is not formed unless necessary. The same applies to the following.

  As described above, the substrate 10 is configured by forming the electrode 12 and the necessary conductor 13 on the base material 11.

  Here, as the substrate 11, for example, a general rigid substrate, a substrate of a flexible substrate, a film material, or the like can be employed.

  Moreover, as the electrode 12 and the conductor 13, copper, aluminum, etc. are employable, for example.

  FIG. 1B is a cross-sectional view showing the substrate 10 being temporarily attached with the ACF 21.

  In the temporary attachment, the ACF 21 of the thin film-like ACF 21 in which the separator 22 is in close contact with the surface of the substrate 10 (base material 11) on which the electrode 12 is provided (IC bare chip 30 is mounted) is The ACF 21 is heated and pressurized with the temperature and pressure for temporary attachment with the exposed surfaces facing each other.

  Since the ACF 21 has adhesiveness, it adheres to the substrate 10 when heated and pressurized.

  FIG. 1C is a cross-sectional view showing the substrate 10 after the temporary attachment of the ACF 21.

  The temporary bonding of the ACF 21 is completed by peeling the separator 22 from the state of FIG. 1B.

  FIG. 1D is a cross-sectional view showing the substrate 10 after the main pressure bonding, that is, a semiconductor device manufactured by flip chip mounting.

  A plurality of bump electrodes 31 are provided on the IC bare chip 30.

  In the main pressure bonding, the IC bare chip 30 is aligned so that the bump electrode 31 and the electrode 12 of the substrate 10 to be electrically connected to the bump electrode 31 face each other.

  Then, the IC bare chip 30 is brought into close contact with the temporarily attached ACF 21 in the aligned state, and is heated and pressed at the temperature and pressure for main press bonding.

  According to this pressure bonding, the bump electrode 31 of the IC bare chip 30 and the electrode 12 of the substrate 10 are close to each other and are electrically connected, and the ACF 21 is cured, whereby the bump electrode 31 and the electrode 12 are electrically connected. The IC bare chip 30 is fixed to the substrate 10 in a connected state.

  By the way, in the mounting method using ACF, when the separator 22 is peeled off in the temporary attachment of the ACF 21, a part of the ACF 21 may be lifted and the ACF 21 may not be attached to the substrate 10 uniformly.

  That is, since the adhesion of the ACF 21 to the base material 11 that is an insulator is weaker than the adhesion to the electrode 12 that is a conductor, the ACF 21 is in close contact with the base material 11 when the separator 22 is peeled off. The part which is being pulled with the separator 22 may be in a lifted state.

  Then, if the ACF 21 is lifted and, as a result, is not uniformly attached to the substrate 10, a connection failure may occur between the bump electrode 31 of the IC bare chip 30 and the electrode 12 of the substrate 10.

  The ACF 21 is likely to be lifted particularly at the end of the ACF 21.

  FIG. 2 is a cross-sectional view showing the substrate 10 in a state where the end of the ACF 21 is lifted.

  That is, FIG. 2A shows the substrate 10 in a state where the end portion of the ACF 21 is lifted and then folded back so that the end portion of the ACF 21 overlaps the electrode 12 portion of the substrate 10.

  In this case, a connection failure may occur between the electrode 12 in which the end portion of the ACF 21 overlaps and the bump electrode 31 of the IC bare chip 30 to be electrically connected to the electrode 12. .

  FIG. 2B shows the substrate 10 in which the end of the ACF 21 is lifted and peeled off.

  If the ACF 21 is uniformly attached to the substrate 10, the end of the ACF 21 (the portion of the ACF 21 that is bonded to the base material 11) is in close contact with the base material 11 when the IC bare chip 30 is finally bonded. It is cured and bonded in this state.

  On the other hand, when the end portion of the ACF 21 is peeled off, the end portion of the ACF 21 is hardened in a peeled state after the IC bare chip 30 is fully pressure-bonded. This can be a starting point for a decrease in force as well as peeling of the cured ACF21.

  As a result, a connection failure may occur between the electrode 12 of the substrate 10 and the bump electrode 31 of the IC bare chip 30 as well.

  Note that, as described above, the separator 22 is peeled off at portions other than the end portion of the ACF 21 except for the electrode 12 of the substrate 10, that is, at the portion that is (directly) in contact with the base material 11. Occasionally, it may be lifted and voids may occur.

  This void also causes poor connection between the electrode 12 of the substrate 10 and the bump electrode 31 of the IC bare chip 30.

JP 2000-323523 JP Japanese Unexamined Patent Publication No. 2000-332055

  As described above, in the conventional flip chip mounting, when the separator 22 is peeled off, the ACF 21 is in a floating state, and the connection failure is caused between the electrode 12 of the substrate 10 and the bump electrode 31 of the IC bare chip 30. As a result, the reliability of a semiconductor device manufactured by flip chip mounting may be reduced.

  The present invention has been made in view of such circumstances, and is intended to improve the reliability of a semiconductor device manufactured by flip-chip mounting.

  The substrate according to the first aspect of the present invention is formed on a base material, a plurality of electrodes electrically connected to a semiconductor chip, and an ACF (Anisotropic Conductive Film) attached to the semiconductor chip. A conductor that covers the entire electrode region of the base material on which the electrode is formed and the region other than the periphery of the electrode region, in a large size region that is a predetermined size larger than the ACF region of the base material. A substrate comprising a solid conductor, the plurality of electrodes, and the base material on which the solid conductor is formed.

  According to a first aspect of the present invention, there is provided a substrate manufacturing method in which a plurality of electrodes electrically connected to a semiconductor chip are formed on a base material, and an ACF (Anisotropic Conductive Film) is used for mounting the semiconductor chip. Of the large size area that is a predetermined size larger than the ACF area of the base material to be pasted, the entire area excluding the electrode area of the base material on which the electrode is formed and the periphery of the electrode area It is a manufacturing method of a board | substrate including the step which forms the solid conductor which is a conductor to coat | cover on the said base material.

  The semiconductor device according to the first aspect of the present invention has a plurality of electrodes formed on a substrate and electrically connected to a semiconductor chip, and an ACF (Anisotropic Conductive Film) attached to the semiconductor chip. A conductor that covers the electrode region of the base material on which the electrode is formed and the entire region excluding the periphery of the electrode region in a large size region that is a predetermined size larger than the ACF region of the base material The solid conductor, the plurality of electrodes, and the substrate on which the solid conductor is formed, the ACF attached to the substrate, and the plurality of electrodes via the ACF. A semiconductor device including a semiconductor chip to be connected.

  In the first aspect as described above, a plurality of electrodes electrically connected to the semiconductor chip are formed on the base material, and an ACF (Anisotropic Conductive Film) is attached to the semiconductor chip. Of the large size region that is a predetermined size larger than the ACF region of the base material to be attached, covers the entire electrode region of the base material on which the electrode is formed and the region excluding the periphery of the electrode region A solid conductor which is a conductor to be formed is formed on the base material.

  The substrate according to the second aspect of the present invention is a plurality of electrodes electrically connected to a semiconductor chip, and an ACF (Anisotropic Conductive Film) on which the ACF (Anisotropic Conductive Film) is attached to mount the semiconductor chip. A substrate comprising a plurality of electrodes formed on the base material and the base material on which the plurality of electrodes are formed so as to cover the entire large size region that is a region larger than the region by a predetermined size. is there.

  According to a second aspect of the present invention, there is provided a method of manufacturing a substrate, comprising: a plurality of electrodes electrically connected to a semiconductor chip; and a substrate on which the ACF (Anisotropic Conductive Film) is attached to the semiconductor chip. The substrate manufacturing method includes a step of forming the substrate on the base so as to cover the entire large size region which is a region larger than the ACF region by a predetermined size.

  A semiconductor device according to a second aspect of the present invention is a plurality of electrodes that are electrically connected to a semiconductor chip, wherein the ACF (Anisotropic Conductive Film) is attached to the semiconductor chip. A substrate having a plurality of electrodes formed on the base material and the base material on which the plurality of electrodes are formed so as to cover the entire large size region that is a region larger than the ACF region by a predetermined size. And a semiconductor chip connected to the plurality of electrodes via the ACF and the ACF attached to the substrate.

  In the second aspect as described above, the plurality of electrodes electrically connected to the semiconductor chip are more than the ACF region of the base material on which the ACF (Anisotropic Conductive Film) is attached to mount the semiconductor chip. Is formed on the substrate so as to cover the entire large size region which is a region larger by a predetermined size.

  According to the first and second aspects of the present invention, the reliability of the semiconductor device can be improved.

It is a figure explaining an example of the mounting method using ACF. It is sectional drawing which shows the board | substrate 10 which became the state which the edge part of ACF21 floated. It is a top view which shows the structural example of one Embodiment of the board | substrate to which this invention is applied. In flip chip mounting, it is a top view which shows the board | substrate 100 after temporary bonding of ACF21. In flip chip mounting, it is sectional drawing which shows the board | substrate 100 after temporary bonding of ACF21. It is sectional drawing which shows the structural example of one Embodiment of the semiconductor device to which this invention is applied. 3 is a plan view showing a configuration example of a substrate 100 having a band conductor 111. FIG. It is a top view which shows the structural example of the board | substrate 100 in which the strip | belt conductor 111 was formed in the base material 11 so that the connection parts 121A and 121B formed by crimping were included. It is a top view which shows the structural example of other one Embodiment of the board | substrate to which this invention is applied. It is a top view which shows the board | substrate 200 with which IC bare chip 30 was mounted | worn. It is a top view which shows the structural example of other one Embodiment of the board | substrate to which this invention is applied. 5 is a flowchart for explaining a process for manufacturing a substrate 100.

  [One Embodiment of Substrate to which the Present Invention is Applied]

  FIG. 3 is a plan view showing a configuration example of an embodiment of a substrate to which the present invention is applied.

  In the figure, parts corresponding to those of the substrate 10 in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted below as appropriate.

  That is, in FIG. 3, the substrate 100 is common to the substrate 10 of FIG. 1 in that it includes a base material 11, electrodes 12 (12A, 12B, 12C), and conductors 13 (FIG. 5).

  However, the substrate 100 further differs from the substrate 10 of FIG. 1 in that it has a solid conductor 101.

  The substrate 100 includes three electrodes 12A to 12C as a plurality of electrodes electrically connected to a semiconductor chip, for example, an IC bare chip 30 (FIG. 6) mounted on the substrate 100.

  The three electrodes 12A to 12C are formed on the surface of the base material 11.

  Moreover, in this Embodiment, the conductor 13 (FIG. 5) is formed in the back surface of the base material 11. FIG.

  Here, hereinafter, the electrodes 12A to 12C are collectively referred to as the electrode 12 as appropriate.

  In addition to the electrodes 12A to 12C, a solid conductor 101 is formed on the surface of the substrate 11.

  The solid conductor 101 is a rectangular area (a dotted line in FIG. 3) larger than the ACF area of the base material 11 to which the ACF 21 is attached to attach the IC bare chip 30 (FIG. 6) attached to the substrate 100. Of the large-size region that is the region surrounded by), and covers the entire electrode region that is the region of the base material 11 on which the electrodes 12A to 12C are formed and the region excluding the periphery thereof (hereinafter also referred to as a non-electrode region). It is a conductor.

  Therefore, the solid conductor 101 is a conductor as if to fill the entire non-electrode region.

  When the solid conductor 101 comes into contact with two or more of the electrodes 12A to 12C, any two of the electrodes in contact with the solid conductor 101 are connected to each other via the solid conductor 101 and are short-circuited ( Therefore, the solid conductor 101 is formed so as not to contact the electrode 12 in order to prevent a short circuit.

  That is, the solid conductor 101 is formed on the base material 11 so as to cover the entire region (non-electrode region) except for the periphery of the electrode region in addition to the electrode region.

  Therefore, it can be said that the solid conductor 101 is formed so as to surround the periphery of the electrode 12 to which the ACF 21 is attached.

  As described above, since the solid conductor 101 is formed so as not to come into contact with the electrode 12, a minute gap is formed between the solid conductor 101 and the electrode 12 (around the electrode 12). This gap (interval between the solid conductor 101 and the electrode 12) is preferably as small as possible, but is about 0.4 mm due to the limitation of the etching process, for example.

  FIG. 4 is a plan view showing the substrate 100 after the temporary attachment of the ACF 21 in flip chip mounting, and FIG. 5 is a cross-sectional view showing the substrate 100.

  As described above, the large size area is a rectangular area that is larger than the ACF area, which is a rectangular area on the surface of the base material 11 to which the ACF 21 is attached, by a predetermined size. It is temporarily pasted in the area, that is, so as not to protrude from the large size area.

  It should be noted that the size of the large-size area that is larger than the ACF area is determined in consideration of, for example, variation in the shape of the ACF 21, alignment accuracy when temporarily attaching the ACF 21, and the like. The

  That is, the size of the large size area is determined by taking into account, for example, the variation in the shape of the ACF 21 and the alignment accuracy when the ACF 21 is temporarily pasted, when the ACF 21 is temporarily pasted. Only the size necessary for avoiding this is determined to be larger than the ACF area.

  As described above, the substrate 100 is provided with the solid conductor 101 that covers the entire electrode region and the non-electrode region excluding the periphery of the large size region larger than the ACF region to which the ACF 21 is attached. It has been.

  Therefore, in flip-chip mounting, the end portion of the ACF 21 does not protrude from the large size region, and hence the solid conductor 101 (except for the minute gap between the solid conductor 101 and the electrode 12). Temporarily pasted.

  Since the solid conductor 101 is a conductor, it has a higher adhesiveness to the ACF 21 than the base material 11, like the electrode 12. Therefore, in the flip-chip mounting, the separator 22 (see FIG. When peeling 1), it is possible to prevent the end portion of the ACF 21 from floating.

  Further, the ACF region to which the ACF 21 is attached is almost covered (except for the minute gap between the solid conductor 101 and the electrode 12) by the electrode 12 and the solid conductor 101, which are conductors having strong adhesiveness to the ACF 21. (Because the base material 11 is not exposed), when the separator 22 (FIG. 1) is peeled off by temporarily attaching the ACF 21, the ACF 21 is lifted not only at the end portion of the ACF 21, but also at other portions. This can be prevented.

  As a result, it is possible to prevent a connection failure between the electrode 12 of the substrate 100 and the bump electrode 31 of the IC bare chip 30 (FIG. 6) mounted on the substrate 100, and thus flip chip mounting. Thus, the reliability of the semiconductor device manufactured can be improved.

  As mentioned above, ACF has strong adhesion to conductors, but the adhesion between ACF and conductors depends on the type of ACF (ACF manufacturer) and the type of metal (material) as the conductor. There is a difference.

  That is, for example, an ACF of a certain manufacturer has stronger adhesiveness with aluminum, and an ACF of another manufacturer has stronger adhesiveness with copper, for example.

  Therefore, it is desirable to employ the same material for the electrode 12 and the solid conductor 101, and to employ a combination with stronger adhesion as a combination of the material and the ACF 21.

  Further, the solid conductor 101 does not cause a step between the electrode 12 so that a uniform pressure can be applied between the portion of the ACF 21 that contacts the electrode 12 and the portion that contacts the solid conductor 101. In other words, the thickness (height) of the solid conductor 101 is preferably the same as the thickness of the electrode 12.

  Furthermore, in the above-described case, the large size area is a rectangular area, but the large size area may be a circular area including an ACF area, for example.

  However, since the shape of the IC bare chip 30 (the bottom surface thereof) is generally (substantially) rectangular, the shape of the ACF 21 is often rectangular similarly to the shape of the IC bare chip 30.

  Accordingly, when the solid conductor 101 is formed so that the large size region is a circular region and covers the entire non-electrode region of the circular large size region, the solid conductor formed in the circular large size region is formed. In 101, the portion exposed after the rectangular ACF 21 is attached becomes larger than when a large rectangular region is employed, and the solid conductor 101 is wasted.

  For this reason, as the shape of the large size region, it is desirable to adopt a shape in which the shape of the IC bare chip 30 (the bottom surface thereof), and hence the shape of the ACF 21 (ACF region), is so large.

  FIG. 6 is a cross-sectional view showing a configuration example of an embodiment of a semiconductor device to which the present invention is applied.

  That is, FIG. 6 is a cross-sectional view showing a semiconductor device manufactured by flip-chip mounting using the substrate 100 shown in FIGS.

  Even in flip-chip mounting using the substrate 100, the same process (step) as in FIG. 1 is performed, and a semiconductor device is manufactured.

  That is, as shown in FIGS. 4 and 5, the IC bare chip 30 provided with the bump electrodes 31 is aligned with the substrate 100 on which the ACF 21 is temporarily attached, and is heated and pressurized at the temperature and pressure for main press bonding. By performing this pressure bonding, the bump electrode 31 of the IC bare chip 30 and the electrode 12 of the substrate 100 are close to each other and are electrically connected, and further, the ACF 21 is cured, so that the bump electrode 31 and the electrode are connected. The IC bare chip 30 is fixed to the substrate 100 in a state of being electrically connected to the substrate 12.

  Therefore, in FIG. 6, the semiconductor device includes a substrate 100 on which the electrode 12, the conductor 13, and the solid conductor 101 are formed on the base material 11, an ACF 21 attached to the substrate 100, and the ACF 21. An IC bare chip 30 connected to the electrode 12 is used.

  In order to enhance the adhesion between the ACF 21 and the substrate 100, a mesh conductor (hereinafter referred to as a mesh) that covers the non-electrode region in a mesh form instead of the solid conductor 101 that covers the entire non-electrode region. (Also referred to as a conductor) can be formed in the non-electrode region.

  However, since the mesh conductor has a large number of holes, when the mesh conductor is formed in the non-electrode region and the ACF 21 is attached to the ACF region, the end portion of the ACF 21 has weak adhesion. It may not be possible to prevent the end of the ACF 21 from being lifted by overlapping with the position of the hole in the mesh conductor.

  Furthermore, even if the portion other than the end portion of the ACF 21 is overlapped with the position of the hole of the mesh conductor, the base material 11 is exposed, so that the adhesiveness is weak and the ACF 21 may float. The floating of the ACF 21 generates a void (gap) as described above with reference to FIG. 2 and causes a connection failure with the bump electrode 31 of the IC bare chip 30.

  Therefore, when the mesh conductor is formed in the non-electrode region instead of the solid conductor 101, the adhesion with the ACF 21 is improved as compared with the conventional case using the substrate 10 of FIG. The lift of the ACF 21 cannot be prevented as much as when the solid conductor 101 covering the entire region is formed in the non-electrode region.

  Further, in order to prevent the end of the ACF 21 from being lifted easily, a strip-shaped conductor (hereinafter also referred to as a strip conductor) may be formed in the peripheral portion of the large size region in place of the solid conductor 101. it can.

  FIG. 7 is a plan view showing a configuration example of the substrate 100 having such a band conductor.

  In the figure, portions corresponding to those in FIGS. 3 to 6 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  FIG. 7A shows a substrate 100 in which a band conductor 111 is formed on the peripheral portion of a large size region instead of the solid conductor 101.

  The band conductor 111 is formed on the inner side so as to surround all of the electrodes 12A to 12C.

  FIG. 7B shows the substrate 100 in a state where the ACF 21 is temporarily attached to the substrate 100 on which the band conductor 111 is formed.

  Note that the portion of the substrate 100 to which the ACF 21 is attached is not actually visible, but is illustrated in FIG. 7B.

  In FIG. 7B, all end portions of the ACF 21 are in contact with the band conductor 111.

  On the other hand, when the solid conductor 101 is used, as shown in FIGS. 3 and 4, the ACF 21 is connected to the solid conductor 101 (and the electrode) in a minute gap formed between the solid conductor 101 and the electrode 12. 12) Do not touch.

  Therefore, the lifting of the end of the ACF 21 can be prevented somewhat more strongly by using the strip conductor 111 than by using the solid conductor 101.

  However, when the band conductor 111 is used, the base material 11 is exposed on the inside of the band conductor 111 and the adhesiveness with the ACF 21 is weak, so that the lift of the ACF 21 is prevented as in the case where the solid conductor 101 is used. Can not do it.

  Moreover, since the base material 11 is exposed in the area | region other than the electrode 12 among the area | regions inside the strip | belt conductor 111 surrounding the electrode 12, like the case of the above-mentioned mesh conductor, adhesiveness is weak and ACF21 is May float. The floating of the ACF 21 generates a void (gap) as described in FIG. 2 and causes a connection failure with the bump electrode 31 of the IC bare chip 30.

  Further, as shown in FIG. 7, in order to bring all the end portions of the ACF 21 into contact with the band conductor, the band conductor 111 is formed on the inner side thereof so as to surround all the electrodes 12A to 12C, in a so-called closed loop. In this case, as described above, although the lifting of the end of the ACF 21 can be firmly prevented, the electrode 12 on the surface of the substrate 11 that is electrically connected to the IC bare chip 30 (FIG. 6) is used. On the other hand, in order to connect a circuit different from the IC bare chip 30 (hereinafter also referred to as a separate circuit), electrical conduction (hereinafter also referred to as front / back conduction) between the front surface and the back surface of the substrate 100 is taken. It is necessary to connect a separate circuit to the back side where the front and back are connected.

  In order to achieve front-to-back conduction of the substrate 100, for example, there is a method of forming a hole called a via hole in the base material 11.

  However, when the base material 11 is a base material having a certain degree of thickness, a via hole can be formed. For example, the thickness used for a semiconductor device to be a wireless tag such as an IC card is small. In the case of a thin film material such as 38 μm or 50 μm, it is difficult to form a via hole, and in order to achieve front-back conduction, the film material that is the base material 11 is removed from both sides of the front and back surfaces. It is necessary to crimp (crimping).

  That is, when the base material 11 is a thin base material such as a film material, a conductor is disposed on the front and back surfaces of the base material 11 at a position where the front and back surfaces are connected, and crimping is performed at the position. By connecting the conductors arranged on the front surface and the back surface of the base material 11, the front and back conduction is taken with the position where the crimping is performed as the connection portion that electrically connects the front surface and the back surface of the base material 11. .

  Therefore, when the closed-loop band conductor 111 that surrounds all of the electrodes 12A to 12C is formed on the base material 11, the band conductor 111 is electrically connected to the front and back from the electrode 12 on the surface of the base material 11 in addition to the electrode 12. Therefore, it is necessary to form the connection portion formed by crimping.

  FIG. 8 is a plan view showing a configuration example of the substrate 100 in which the band conductor 111 is formed on the base material 11 as described above.

  In the figure, portions corresponding to those in FIGS. 3 to 6 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  FIG. 8A shows a substrate 100 in which a band conductor 111 is formed instead of the solid conductor 101.

  In FIG. 8A, crimping is performed at the position on the left side of the electrode 12A and the position on the right side of the electrode 12B on the right side of the electrode 12A, and the front surface and the back surface of the substrate 11 are electrically connected by the crimping. Connecting portions 121A and 121B are formed.

  That is, the connection part 121A is formed on the left side of the electrode 12A, and the connection part 121B is formed on the right side of the electrode 12B.

  The band conductor 111 is formed on the inner side so as to surround all of the electrodes 12A to 12C and all of the connecting portions 121A and 121B.

  FIG. 8B shows the substrate 100 with the ACF 21 temporarily attached to the substrate 100 of FIG. 8A.

  Note that the portion of the substrate 100 to which the ACF 21 is attached is not actually visible, but is illustrated in FIG. 8B.

  The connecting portions 121A and 121B formed by crimping have a circular shape with a diameter of about 2 mm.

  Therefore, if the distance between the electrodes 12A and 12B (and hence the width of the IC bare chip 30 mounted on the electrode 12) is 2.5 mm, for example, the end of the ACF 21 is positioned on the band conductor 111. In addition, in order to attach the ACF 21, the ACF 21 having a width of about 10 mm (= 2 mm + 2 mm + 2.5 mm + margin) is required.

  For example, if the IC bare chip 30 (the bottom surface) mounted on the substrate 11 has a square size of about 2.5 mm in width and length, the ACF 21 is slightly larger than the size of the IC bare chip 30. (For example, horizontal and vertical are about 3 mm) is sufficient.

  Therefore, the use of the ACF 21 having a lateral width of about 10 mm as described above is useless, and further increases the cost of a semiconductor device configured using the substrate 100.

  On the other hand, the solid conductor 101 is slightly inferior to the band conductor 111 in preventing the end of the ACF from rising, but can also prevent the other part of the ACF 21 from rising. This is more effective than the band conductor 111 in that the useless ACF 21 is not used to increase the cost of the semiconductor device.

  [Another Embodiment of Substrate to Which the Present Invention is Applied]

  FIG. 9 is a plan view showing a configuration example of another embodiment of a substrate to which the present invention is applied.

  In the figure, the portions corresponding to the substrate 10 of FIG. 1 or the substrate 100 of FIGS. 3 to 6 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  A substrate 200 in FIG. 9 is a substrate that constitutes a semiconductor device serving as an IC card that performs proximity communication without contact, and includes a substrate 11 that is a thin film material, electrodes 12A to 12C, and a solid conductor 101. The conductor 201 and the conductor 201 are formed by forming another conductor 202.

  That is, the electrodes 12A to 12C and the solid conductor 101 are formed on the surface (first surface) of the base material 11.

  Further, a conductor 201 (first conductor) is formed on the surface of the base material 11.

  A part of the conductor 201 is formed so as to go around the peripheral portion of the substrate 11 and to connect one end of the two ends to the electrode 12B (one electrode).

  Here, the coil 211 is constituted by a portion of the conductor 201 that circulates around the peripheral portion of the base material 11.

  The other part of the conductor 201 is branched from the part constituting the coil 211 and formed in a rectangular shape.

  The conductor 202 (second conductor) is formed on the back surface (second surface) opposite to the surface of the substrate 11.

  Here, in FIG. 9, the part formed in the surface of the base material 11 is shown by the continuous line, and the part formed in the back surface of the base material 11 is shown by the dotted line. The same applies to FIGS. 10 and 11 described later.

  The conductor 202 has a rectangular shape, and is disposed at a position facing the rectangular portion of the conductor 201 formed on the surface of the substrate 11.

  As described above, the capacitor 202 is configured by disposing the conductor 202 and the rectangular portion of the conductor 201 so as to face each other.

  Further, in the base material 11, the conductor 201 on the surface of the base material 11 and the back surface of the base material 11 are crimped to the other end of the two ends of the portion of the conductor 211 of the conductor 201. A connecting portion 203A (first connecting portion) for electrically connecting the conductor 202 is formed.

  Furthermore, in the base material 11, the electrode 12A on the surface of the base material 11 and the conductor 202 on the back surface of the base material 11 are electrically connected to a predetermined position of the electrode 12A (another one electrode) by crimping. A connecting portion 203B is formed.

  As described above, when the connection portions 203A and 203B are electrically connected to each other, the coil 211 and the capacitor 212 are connected in parallel when viewed from the electrodes 12A and 12B (via the connection portions 203A and 203B). An LC circuit 210 which is a parallel resonance circuit as another circuit connected to the electrodes 12A and 12B is configured.

  In an IC card as a semiconductor device configured using the substrate 200 of FIG. 9, proximity communication is performed with a so-called reader / writer when a current flows through the LC circuit 210 by electromagnetic induction.

  In addition, the thickness of the thin film material as the base material 11 constituting the substrate 200 constituting the semiconductor device serving as the IC card is about 38 μm or 50 μm, and the electrode 12 formed on such a base material 11. The thickness of the solid conductor 101, the conductor 201, and the conductor 202 is about 10 to 35 μm.

  Further, the size (horizontal × vertical) of the portion of the conductor 201 that wraps around the peripheral portion of the base material 11 and constitutes the coil 211 is, for example, about 80 mm × 50 mm or less.

  Here, in FIG. 9, a part of the conductor 201 (first conductor) on the front surface side of the substrate 11 constitutes the coil 211, and the conductor 202 (second conductor) on the back surface side of the substrate 11. The conductors 201 and 202 are formed so as to constitute the capacitor 212 together with the other part of the conductor 201 by facing the other part of the conductor 201.

  Therefore, in FIG. 9, the coil 211 is formed on the front surface side of the base material 11 by the conductor 201 on the front surface side of the base material 11, but the coil 211 is based on the conductor 202 on the back surface side of the base material 11. It can be formed on the back side of the material 11.

  That is, a part of the conductor 202 (second conductor) on the back surface side of the substrate 11 constitutes the coil 211, and the conductor 201 (first conductor) on the surface side of the substrate 11 is in addition to the conductor 202. The conductors 201 and 202 are formed so as to constitute the capacitor 212 together with the other part of the conductor 202 by facing the part of the conductor 202, thereby forming the coil 211 on the back surface side of the substrate 11. be able to.

  FIG. 10 is a plan view showing the substrate 200 on which the IC bare chip 30 is mounted.

  In FIG. 10, an IC bare chip 30 is an IC bare chip for processing an IC card, and is mounted (mounted) on a substrate 200 by flip chip mounting.

  In FIG. 10, the ACF 21 is not shown.

  9 and 10, three electrodes 12A to 12C are formed on the substrate 200 (base material 11), and the electrode 12C, which is one of the three electrodes 12A to 12C, It is a dummy electrode.

  In other words, the IC bare chip 30 has three bump electrodes 31 (FIG. 6) corresponding to the three electrodes 12A to 12C, but the IC bare chip 30 has three bump electrodes 31 other than the dummy electrode 12C. Are electrically connected to the LC circuit 210 via the two bump electrodes 31 corresponding to the two electrodes 12A and 12B.

  The dummy electrode 12C of the substrate 200 and the bump electrode 31 of the IC bare chip 30 corresponding to the electrode 12C are provided to stabilize the IC bare chip 30 when the IC bare chip 30 is mounted on the substrate 200. Yes.

  Therefore, it is not necessary to provide the electrode 12C electrically. When the electrode 12C is not provided, the portion of the base material 11 where the electrode 12C was present (the gap between the electrode 12C and the solid conductor 101). In addition, the solid conductor 101 can be formed, and in this case, it is possible to more firmly prevent the ACF 21 from being lifted in the temporary attachment.

  [Still another embodiment of substrate to which the present invention is applied]

  FIG. 11 is a plan view showing a configuration example of still another embodiment of a substrate to which the present invention is applied.

  In the figure, portions corresponding to those of the substrate 200 of FIG. 9 are denoted by the same reference numerals, and description thereof will be omitted below as appropriate.

  That is, in FIG. 11, the substrate 300 is configured in the same manner as the substrate 200 of FIG. 9 except that the electrodes 301 </ b> A to 12 </ b> C and the solid conductor 101 are provided instead of the electrodes 301 </ b> A, 301 </ b> B, and 301 </ b> C. ing.

  In the substrate 300, the electrodes 301A to 301C are formed on the base material 11 so as to cover the entire large size region by all of the electrodes 301A to 301C.

  Accordingly, in the substrate 300, the electrodes 301A to 301C also serve as the solid conductor 101 described above.

  That is, the electrodes 301A to 301C are configured so as to cover the entire non-electrode region in addition to the electrode region where the (original) electrodes 12A to 12C are formed. It also serves as the solid conductor 101 (however, there is a gap for preventing a short circuit).

  Note that the number of electrodes formed on the substrates 100, 200, and 300 is not limited to three, and the dummy electrodes are not necessarily formed.

  [Process of manufacturing substrate 100]

  FIG. 12 is a flowchart for explaining a process of manufacturing the substrate 100 of FIGS.

  The substrate 100 manufacturing apparatus (not shown) manufactures the substrate 100 by forming the electrode 12, the solid conductor 101, and the necessary conductors 13 on the base material 11 in step S11, and ends the process.

  Note that the substrate 200 in FIG. 9 and the substrate 300 in FIG. 11 are manufactured in the same manner as the substrate 100.

  However, for the substrate 200 in FIG. 9 and the substrate 300 in FIG. 11, the conductor 201 is also formed on the base material 11, and the conductor 202 is formed as the conductor 13.

  For the substrate 300 in FIG. 11, instead of the electrode 12 and the solid conductor 101, electrodes 301 </ b> A to 301 </ b> C that also serve as the electrode 12 and the solid conductor 101 are formed on the base material 11.

  The embodiment of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

  11 Substrate, 12, 12A to 12C electrode, 13 conductor, 21 ACF, 22 separator, 30 IC bare chip, 31 bump electrode, 100 substrate, 101 solid conductor, 111 band conductor, 121A, 121B connection part, 200 substrate, 201, 202 conductor, 203A, 203B connection, 210 LC circuit, 211 coil, 212 capacitor, 300 substrate, 301A, 301B, 301C electrode

Claims (10)

A plurality of electrodes formed on the substrate and electrically connected to the semiconductor chip;
The base material on which the electrode is formed in a large size region, which is a region larger than the ACF region of the base material on which ACF (Anisotropic Conductive Film) is attached for mounting the semiconductor chip. A solid conductor which is a conductor covering the entire electrode region and the region excluding the periphery of the electrode region;
A substrate comprising: the plurality of electrodes; and the base material on which the solid conductor is formed. The base material is a thin film material,
The electrode and the solid conductor are formed on a first surface which is one surface of the film material,
The substrate according to claim 1, wherein a first conductor that is a conductor connected to one of the plurality of electrodes is further formed on the first surface of the film material. A second conductor, which is a conductor different from the first conductor, is formed on the second surface of the film material, which is the surface opposite to the first surface,
The first connection portion that electrically connects the first conductor and the second conductor, the other electrode of the plurality of electrodes, and the second conductor are electrically connected The board | substrate of Claim 2. The 2nd connection part connected to is formed in the said film material by crimping. A portion of the first conductor comprises a coil;
The second conductor is formed to face another part of the first conductor, and together with the other part of the first conductor, constitutes a capacitor,
The coil and the capacitor are connected in parallel to the one electrode and the other one electrode via the first and second connection portions. substrate. A part of the second conductor constitutes a coil;
The first conductor is formed so as to face another part of the second conductor, and constitutes a capacitor together with the other part of the second conductor,
The coil and the capacitor are connected in parallel to the one electrode and the other one electrode via the first and second connection portions. substrate. While forming a plurality of electrodes electrically connected to the semiconductor chip on the substrate,
The base material on which the electrode is formed in a large size region, which is a region larger than the ACF region of the base material on which ACF (Anisotropic Conductive Film) is attached for mounting the semiconductor chip. And forming a solid conductor on the base material, which is a conductor that covers the entire region excluding the electrode region and the periphery of the electrode region. A plurality of electrodes formed on the substrate and electrically connected to the semiconductor chip;
The base material on which the electrode is formed in a large size region, which is a region larger than the ACF region of the base material on which ACF (Anisotropic Conductive Film) is attached for mounting the semiconductor chip. A solid conductor which is a conductor covering the entire electrode region and the region excluding the periphery of the electrode region;
A substrate having the plurality of electrodes and the base material on which the solid conductor is formed;
The ACF attached to the substrate;
A semiconductor device comprising: a semiconductor chip connected to the plurality of electrodes via the ACF. A plurality of electrodes that are electrically connected to a semiconductor chip, the area being larger by a predetermined size than the ACF area of the base material to which the ACF (Anisotropic Conductive Film) is attached for mounting the semiconductor chip A plurality of electrodes formed on the substrate so as to cover the entire large size region;
A substrate comprising: the base material on which the plurality of electrodes are formed. A plurality of electrodes that are electrically connected to a semiconductor chip, a large size that is a region that is a predetermined size larger than the ACF region of the base material on which the ACF (Anisotropic Conductive Film) is attached to attach the semiconductor chip A method for producing a substrate, comprising the step of forming the substrate so as to cover the entire region. A plurality of electrodes that are electrically connected to a semiconductor chip, the area being larger by a predetermined size than the ACF area of the base material to which the ACF (Anisotropic Conductive Film) is attached for mounting the semiconductor chip A plurality of electrodes formed on the substrate so as to cover the entire large size region;
A substrate having the base material on which the plurality of electrodes are formed;
The ACF attached to the substrate;
A semiconductor device comprising: a semiconductor chip connected to the plurality of electrodes via the ACF.

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