JP2011148013A - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
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Abstract
Description
本発明は、ＭＥＭＳ（Ｍｉｃｒｏ Ｅｌｅｃｔｒｏ Ｍｅｃｈａｎｉｃａｌ Ｓｙｓｔｅｍｓ、微小電子機械システム）素子などの電子デバイスを組み込んだ半導体装置およびその製造方法に関する。 The present invention relates to a semiconductor device incorporating an electronic device such as a MEMS (Micro Electro Mechanical Systems) element and a method for manufacturing the same.
従来から、微細加工技術により形成したＭＥＭＳ素子を組み込んだ半導体素子が知られている（例えば、非特許文献１，非特許文献２）。このＭＥＭＳ素子は、一般に、機械的に動作する可動部（例えば、ＲＦスイッチや、ミラーなど）と、その可動部を駆動するための駆動部（駆動回路）が、その他の回路部とともに設けられている。このようなＭＥＭＳ素子は、従来、機械的な動きがあるＲＦスイッチなどの可動部と駆動部とが、素子の一面側に設けられており、他方の面は半導体材料やガラス基材などで覆われている。 Conventionally, a semiconductor element incorporating a MEMS element formed by a fine processing technique is known (for example, Non-Patent Document 1, Non-Patent Document 2). This MEMS element is generally provided with a movable part (for example, an RF switch or a mirror) that operates mechanically and a drive part (drive circuit) for driving the movable part together with other circuit parts. Yes. Conventionally, such a MEMS element has a movable part such as an RF switch having mechanical movement and a driving part provided on one surface side of the element, and the other surface is covered with a semiconductor material or a glass substrate. It has been broken.
このＭＥＭＳ素子を回路基板などに取り付ける場合には、ＭＥＭＳ素子の半導体材料などで覆われている面をボンディングツールで真空吸着して回路基板の所定位置に設置し、加圧、超音波などにより接着・接続（接合）する。このようにして、一面側にＲＦスイッチなどの可動部を有するＭＥＭＳ素子を組み込んだ半導体装置を、通常の製造方法によって製造することができる。 When this MEMS element is attached to a circuit board or the like, the surface of the MEMS element covered with a semiconductor material or the like is vacuum-adsorbed with a bonding tool and placed at a predetermined position on the circuit board, and bonded by pressure, ultrasonic waves, or the like.・ Connect (join). In this way, a semiconductor device incorporating a MEMS element having a movable part such as an RF switch on one surface side can be manufactured by a normal manufacturing method.
しかしながら、従来のＭＥＭＳ素子は、一面側に機械的な動きがあるＲＦスイッチなどの可動部とともに駆動部も設けられているため、素子面積が大きくなってしまう、という問題があった。また、ＭＥＭＳ素子の構造を工夫して素子面積を小さくしたとしても、そのＭＥＭＳ素子を回路基板などへ実装する実装方法も併せて実現しなければならない。さらに、ＭＥＭＳ素子を回路基板などに取り付ける場合、ＭＥＭＳ素子と回路基板との接合強度を高めるためには、加圧、超音波などによる押圧力を高める必要があるが、押圧力を高めることで脆弱なＭＥＭＳ素子を破損させるおそれがある。 However, the conventional MEMS element has a problem that the element area becomes large because a driving part is provided together with a movable part such as an RF switch having a mechanical movement on one side. Even if the structure of the MEMS element is devised to reduce the element area, a mounting method for mounting the MEMS element on a circuit board or the like must also be realized. Furthermore, when attaching a MEMS element to a circuit board or the like, in order to increase the bonding strength between the MEMS element and the circuit board, it is necessary to increase the pressing force by pressurization or ultrasonic waves. There is a risk of damaging the MEMS element.
そこで、本発明は、素子面積が小さいＭＥＭＳ素子などの電子デバイスを組み込み、かつ電子デバイスと回路基板との接合強度を高めることが可能な半導体装置およびその製造方法を提供することを目的とする。 Therefore, an object of the present invention is to provide a semiconductor device that can incorporate an electronic device such as a MEMS element having a small element area and can increase the bonding strength between the electronic device and a circuit board, and a method for manufacturing the same.
請求項１に記載の半導体装置は、一側の表面部の一部に機能部材を露出し、他側の表面部の一部に他の機能部材を露出している機能素子本体と、
前記機能素子本体の前記一側表面部であって機能部材が露出していない部分にバンプを介して接合された一側電極パッドが一側に設けられ、他側に他側電極パッドが設けられた第１実装用基板と、
回路基板本体の一面に、前記機能素子本体の前記他側表面部であって機能部材が露出していない部分にバンプを介して接合された第１電極パッドと、前記第１実装用基板の他側電極パッドとワイヤード接続された第２電極パッドとを有する回路基板とを備え、
前記機能素子本体の一側に露出された機能部材の部分に前記バンプによる第１空間部を設け、かつ他側に露出された機能部材の部分に前記バンプによる第２空間部を設け、
前記機能素子本体の一側のバンプと他側のバンプとを対向して配設した、ことを特徴とする。
The semiconductor device according to claim 1, wherein the functional element main body exposes the functional member on a part of the surface portion on one side and exposes the other functional member on a part of the surface portion on the other side;
One side electrode pad joined via a bump to a portion of the functional element body on the one side surface portion where the functional member is not exposed is provided on one side, and the other side electrode pad is provided on the other side. A first mounting board;
A first electrode pad bonded to one surface of the circuit board body on the other surface portion of the functional element body through which a functional member is not exposed, and a first mounting board; A circuit board having a side electrode pad and a second electrode pad wired-connected,
Providing a first space portion by the bump in a portion of the functional member exposed on one side of the functional element body, and providing a second space portion by the bump in a portion of the functional member exposed on the other side;
A bump on one side and a bump on the other side of the functional element main body are arranged to face each other.
請求項２に記載の半導体装置は、請求項１に記載の半導体装置において、前記機能素子本体の他側表面部と前記回路基板との間に第２実装用基板を備え、
前記第２実装用基板の一面の一側電極パッドが、バンプを介して前記機能素子本体の前記他側表面部であって機能部材が露出していない部分と接合され、
前記第２実装用基板の他面の他側電極パッドが、バンプを介して前記回路基板の前記第１電極パッドと接合されている、ことを特徴とする。
The semiconductor device according to claim 2 is the semiconductor device according to claim 1, further comprising a second mounting substrate between the other surface portion of the functional element body and the circuit substrate.
The one-side electrode pad on one surface of the second mounting substrate is bonded to a portion of the other surface portion of the functional element body that is not exposed to the functional member via a bump,
The other electrode pad on the other surface of the second mounting substrate is bonded to the first electrode pad of the circuit board via a bump.
請求項３に記載の半導体装置の製造方法は、一側の表面部の一部に機能部材を露出し、他側の表面部の一部に他の機能部材を露出している機能素子本体がアレイ状に作り込まれている機能素子ウエハを用意するステップと、
前記機能素子ウエハの各機能素子本体の一側表面部であって機能部材が露出していない部分にバンプを形成するステップと、
前記機能素子ウエハの各機能素子本体の一側表面部のバンプに、他側に他側電極パッドを設けた第１実装用基板の一側の一側電極パッドを接合するステップと、
前記第１実装用基板が接合された機能素子ウエハを劈開して、機能素子本体の一側に露出された機能部材の部分に前記バンプによる第１空間部を有する、チップ状の機能素子を形成するステップと、
前記機能素子本体と接合するための第１電極パッドと、前記第１実装用基板の他側電極パッドとワイヤード接続するための第２電極パッドとを有する回路基板を用意するステップと、
前記回路基板の第１電極パッド上に、前記チップ状の機能素子の一側のバンプと同配置のバンプを形成するステップと、
前記チップ状の機能素子を、前記第１実装用基板の他側をボンディングツールにより吸着して前記回路基板と対向させ、前記回路基板の前記第１電極パッド上のバンプと前記機能素子本体の他側表面部であって機能素子が露出していない部分とを、前記機能素子本体の一側のバンプと前記回路基板上のバンプとが対向するように接合し、前記回路基板上のバンプによる第２空間部を形成するステップと、
前記第１実装用基板の他側電極パッドと前記回路基板の第２電極パッドとをワイヤード接続するステップと、
を有することを特徴とする。
According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device comprising: a functional element body that exposes a functional member on a part of a surface portion on one side and exposes another functional member on a portion of a surface portion on the other side Preparing functional element wafers built in an array;
Forming a bump on a portion of one side surface portion of each functional element body of the functional element wafer where the functional member is not exposed;
Bonding one side electrode pad on one side of the first mounting substrate having the other side electrode pad provided on the other side to a bump on one side surface portion of each functional element body of the functional element wafer;
The functional element wafer to which the first mounting substrate is bonded is cleaved to form a chip-shaped functional element having the first space portion formed by the bumps in the portion of the functional member exposed on one side of the functional element body. And steps to
Providing a circuit board having a first electrode pad for bonding to the functional element body and a second electrode pad for wired connection to the other electrode pad of the first mounting board;
Forming a bump having the same arrangement as a bump on one side of the chip-like functional element on the first electrode pad of the circuit board;
The chip-like functional element is attached to the other side of the first mounting substrate with a bonding tool so as to face the circuit board, and the bumps on the first electrode pads of the circuit board and the functional element main body A portion of the side surface portion where the functional element is not exposed is joined so that a bump on one side of the functional element body and a bump on the circuit board face each other, Forming two spaces,
Wire-connecting the other electrode pad of the first mounting substrate and the second electrode pad of the circuit board;
It is characterized by having.
請求項４に記載の半導体装置の製造方法は、請求項３に記載の半導体装置の製造方法において、前記機能素子本体の他側表面部と前記回路基板との間を接合するための第２実装用基板を用意し、
前記第２実装用基板の一面の一側電極パッド上に、前記チップ状の機能素子の一側のバンプと同配置のバンプを形成し、前記第２実装用基板の他面の他側電極パッドを前記回路基板の前記第１電極パッドのバンプに接合し、前記第２実装用基板の一側電極パッド上のバンプと前記機能素子本体の他側表面部であって機能素子が露出していない部分とを、前記機能素子本体の一側のバンプと前記第２実装用基板上のバンプとが対向するように接合する、ことを特徴とする。
The method for manufacturing a semiconductor device according to claim 4 is the method for manufacturing a semiconductor device according to claim 3, wherein the second mounting for joining between the other surface portion of the functional element body and the circuit board is performed. Prepare a board for
A bump having the same arrangement as the bump on one side of the chip-like functional element is formed on one side electrode pad on one side of the second mounting substrate, and the other side electrode pad on the other side of the second mounting substrate. Are bonded to the bumps of the first electrode pads of the circuit board, and the functional elements are not exposed at the bumps on the one side electrode pads of the second mounting board and the other side surface portion of the functional element body. The portion is bonded so that a bump on one side of the functional element body and a bump on the second mounting substrate face each other.
本発明によれば、機能素子本体の一側と他側に機能部材が露出するようにして面積を小さくしたＭＥＭＳなどの機能素子をフリップチップ実装するに際し、機能素子本体に第１実装用基板を接合し、その第１実装用基板ごとボンディングツール（例えば、フリップチップボンダー）で吸着して、回路基板へのフリップチップ実装が実現できる。また、機能素子本体の一側と他側に金ボールなどのバンプを各々介して実装するため、機能素子本体の一側に第１空間部、他側に第２空間部が形成され、可動部などの機能部材に障害を与えることが避けられる。 According to the present invention, when flip-chip mounting a functional element such as a MEMS having a small area so that the functional member is exposed on one side and the other side of the functional element body, the first mounting substrate is mounted on the functional element body. The first mounting substrate is bonded and adsorbed by a bonding tool (for example, a flip chip bonder), so that the flip chip mounting on the circuit board can be realized. In addition, in order to mount the functional element body on one side and the other side via bumps such as gold balls, a first space part is formed on one side of the functional element body and a second space part is formed on the other side, and the movable part It is possible to avoid obstructing functional members such as.
また、機能素子本体の一側のバンプと他側のバンプとが対向して配設されているため、機能素子本体を回路基板に接合する際の力（押圧力）が、バンプからバンプに伝えられ、機能素子本体にかかる力が軽減される。このため、押圧力を高めても機能素子本体が破損するおそれがなくなり、機能素子本体と回路基板との接合強度を高めることが可能となる。 In addition, since the bumps on one side of the functional element body and the bumps on the other side are arranged to face each other, the force (pressing force) when joining the functional element body to the circuit board is transmitted from the bump to the bump. This reduces the force applied to the functional element body. For this reason, even if the pressing force is increased, there is no possibility that the functional element body is damaged, and the bonding strength between the functional element body and the circuit board can be increased.
さらに、第２実装用基板を用いることにより、機能素子本体を回路基板に直接接合する場合に比して、接合時の加重と超音波を充分に掛けて強制的に接合できるため、第１電極パッドの金メッキがより薄いものを使用できる。従って、一般的に用いられる汎用の回路基板を採用することが可能になる。 Furthermore, by using the second mounting substrate, the first electrode can be forcibly bonded by sufficiently applying a weight and ultrasonic waves during bonding as compared with the case where the functional element body is directly bonded to the circuit board. Thinner pads with gold plating can be used. Therefore, it is possible to employ a general-purpose circuit board that is generally used.
以下、図面を参照して、本発明のＭＥＭＳ素子などの電子デバイスを組み込んだ半導体装置およびその製造方法の実施形態について説明する。以下、本発明の実施形態では、電子デバイスとして、表面部に可動部分を露出している、ＭＥＭＳ素子について説明する。 Hereinafter, with reference to the drawings, embodiments of a semiconductor device incorporating an electronic device such as a MEMS element of the present invention and a method for manufacturing the same will be described. Hereinafter, in an embodiment of the present invention, a MEMS element having a movable portion exposed on a surface portion will be described as an electronic device.
図１は、本発明に係る、両面の表面部に可動部分が露出したＭＥＭＳ素子本体の構成例を示す概念図である。図１（ａ）はＭＥＭＳ素子本体の上面図を示し、同図（ｂ）はＭＥＭＳ素子本体の下面図を示し、同図（ｃ）はそれらのＸ−Ｘ´断面を模式的に示す図である。 FIG. 1 is a conceptual diagram showing a configuration example of a MEMS element body in which movable parts are exposed on both surface portions according to the present invention. FIG. 1A is a top view of the MEMS element body, FIG. 1B is a bottom view of the MEMS element body, and FIG. 1C is a diagram schematically showing the XX ′ cross section thereof. is there.
図１において、機能素子本体であるＭＥＭＳ素子本体１は、例えば上面側と下面側の２層構造に形成されている。その上面側には、図１（ａ）のように、第１接点２Ａと第２接点２Ｂが所定の距離だけ離されて固定されている。これらの第１，第２接点２Ａ，２Ｂはそれぞれ、第１出力端子６，第２出力端子７に電気的に接続されている。 In FIG. 1, a MEMS element body 1 which is a functional element body is formed, for example, in a two-layer structure of an upper surface side and a lower surface side. On the upper surface side, as shown in FIG. 1A, the first contact 2A and the second contact 2B are fixed apart by a predetermined distance. The first and second contacts 2A and 2B are electrically connected to the first output terminal 6 and the second output terminal 7, respectively.
これら第１接点２Ａと第２接点２Ｂとの間に、共通接点２Ｃが可動できるように設けられ、この共通接点２Ｃは、弾性を持つ例えばバネ材などによって、共通端子５に電気的機械的に接続されている。 A common contact 2C is provided between the first contact 2A and the second contact 2B so that the common contact 2C can move. The common contact 2C is electrically and mechanically connected to the common terminal 5 by a spring material having elasticity, for example. It is connected.
ＭＥＭＳ素子本体１の下面側には、図１（ｂ）のように、第１駆動回路３Ａと第２駆動回路３Ｂが対向して固定配置されている。これら第１駆動回路３Ａ、第２駆動回路３Ｂの中間に、これら第１駆動回路３Ａ、第２駆動回路３Ｂによって駆動される接極子３Ｃが配置されている。この接極子３Ｃが、上面側の共通接点２Ｃと機械的に連結されている。 On the lower surface side of the MEMS element body 1, as shown in FIG. 1B, a first drive circuit 3A and a second drive circuit 3B are fixedly arranged facing each other. An armature 3C driven by the first drive circuit 3A and the second drive circuit 3B is disposed between the first drive circuit 3A and the second drive circuit 3B. The armature 3C is mechanically connected to the common contact 2C on the upper surface side.
このＭＥＭＳ素子本体１は、図１（ｃ）のＸ−Ｘ´に沿った断面を参照して、例えば、第１駆動回路３Ａが駆動されると接極子３Ｃは図中左方向に移動し、これに連結されている共通接点２Ｃも左方向へ移動して第１接点２Ａと接触する。逆に、第２駆動回路３Ｂが駆動されると接極子３Ｃは図中右方向に移動し、これに連結されている共通接点２Ｃも右方向へ移動して第２接点２Ｂと接触する。このようにして、共通端子５と第１出力端子６あるいは第２出力端子７との間の電気的接続状態が切り替えられる。 The MEMS element body 1 refers to the cross section taken along the line XX ′ in FIG. 1C. For example, when the first drive circuit 3A is driven, the armature 3C moves to the left in the figure. The common contact 2C connected thereto also moves to the left and contacts the first contact 2A. Conversely, when the second drive circuit 3B is driven, the armature 3C moves to the right in the figure, and the common contact 2C connected thereto also moves to the right and contacts the second contact 2B. In this way, the electrical connection state between the common terminal 5 and the first output terminal 6 or the second output terminal 7 is switched.
この図１のＭＥＭＳ素子本体１は、一面側（下面側）に駆動回路および接極子が配置され、他面側（上面側）にＲＦスイッチが配置されて、いわゆる二層構造に形成されているため、一つの面側に駆動回路やＲＦスイッチを配置する、いわゆる一層構造のものに比較して、素子面積を小さくすることができる。 The MEMS element body 1 in FIG. 1 is formed in a so-called two-layer structure in which a drive circuit and an armature are arranged on one surface side (lower surface side) and an RF switch is arranged on the other surface side (upper surface side). Therefore, the element area can be reduced as compared with a so-called one-layer structure in which a drive circuit and an RF switch are arranged on one surface side.
また、この図１のＭＥＭＳ素子本体１では、二層構造に形成されることに伴って、一面側（下面側）および他面側（上面側）の表面部に機械的な動きを行う可動部分が存在するため、その両面に、可動部分の動きに障害を与えないような空間部分を形成する必要がある。さらに、ＭＥＭＳ素子本体１を回路基板などに実装する際に、真空吸着を行う通常のボンディングツールでは、可動部分に影響を与えるおそれがあるため、そのままでは使用することが難しい。また、ＭＥＭＳ素子本体１と回路基板などとの接合強度を高めるためには、加圧、超音波などによる押圧力を高める必要があるが、押圧力を高めることでＭＥＭＳ素子本体１を破損させるおそれがある。 Further, in the MEMS element body 1 of FIG. 1, a movable part that mechanically moves on the surface portion on one surface side (lower surface side) and the other surface side (upper surface side) with the formation of the two-layer structure. Therefore, it is necessary to form a space portion that does not impede the movement of the movable portion on both sides. Furthermore, when mounting the MEMS element body 1 on a circuit board or the like, an ordinary bonding tool that performs vacuum suction may affect the movable part, and thus is difficult to use as it is. Further, in order to increase the bonding strength between the MEMS element body 1 and the circuit board, it is necessary to increase the pressing force by pressurization, ultrasonic waves, etc., but there is a risk of damaging the MEMS element body 1 by increasing the pressing force. There is.
ここで、図１のＭＥＭＳ素子本体１は、例として示した双投型の構成図であり、この型式に限ることなく、機械的に動作する構成部分が両面に露出する構造のＭＥＭＳ素子本体であれば、単投型のものやその他の駆動構造のものにも本発明が適用される。また、ＭＥＭＳ素子本体１の上面側と下面側に設ける共通接点と接極子とを、上下を逆に配置してもよい。 Here, the MEMS element body 1 of FIG. 1 is a double-throw type configuration diagram shown as an example, and is not limited to this type, but is a MEMS element body having a structure in which mechanically operating components are exposed on both sides. If present, the present invention is also applied to a single throw type and other drive structures. Moreover, you may arrange | position the common contact and armature provided in the upper surface side and lower surface side of the MEMS element main body 1 upside down.
上記のような構造上、実装上の問題を解決する、本発明の半導体装置およびその製造方法の実施形態を、図２〜図８を参照して説明する。 An embodiment of a semiconductor device and a method for manufacturing the same according to the present invention that solves the above-described structural and mounting problems will be described with reference to FIGS.
図２は、ウエハ状態のＭＥＭＳ素子本体の一側にバンプを形成した図である。図２において、ＭＥＭＳウエハには、機能素子本体であるＭＥＭＳ素子本体１１がアレイ状に多数形成されている。個々のＭＥＭＳ素子本体１１の一側１１ｂの表面部の一部に機能部材である例えば図１の接極子３Ｃ（可動部材）が露出しており、他側１１ａの表面部の一部に他の機能部材である例えば図１の共通接点２Ｃ（可動部材）が露出している。 FIG. 2 is a diagram in which bumps are formed on one side of the MEMS element body in a wafer state. In FIG. 2, a large number of MEMS element bodies 11, which are functional element bodies, are formed in an array on the MEMS wafer. For example, the armature 3C (movable member) of FIG. 1 as a functional member is exposed at a part of the surface portion of the one side 11b of each MEMS element main body 11, and other parts of the surface portion of the other side 11a are exposed to other parts. For example, the common contact 2C (movable member) of FIG. 1 which is a functional member is exposed.
このＭＥＭＳウエハの各ＭＥＭＳ素子本体１１の一側１１ｂの表面部であって可動部材が露出していない部分に、バンプである金ボール１２を形成する。このとき、後述するように回路基板などに実装した場合に、高くかつバランスがよい接合強度が得られるように、例えば一側１１ｂの表面部の四隅に金ボール１２を形成する。 Gold balls 12 as bumps are formed on the surface portion of one side 11b of each MEMS element main body 11 of the MEMS wafer and the movable member is not exposed. At this time, for example, the gold balls 12 are formed at the four corners of the surface portion of the one side 11b so as to obtain a high and well-balanced bonding strength when mounted on a circuit board or the like as will be described later.
図３は、ウエハ状態のＭＥＭＳ素子本体１１の一側１１ｂに、金ボール１２を介して第１実装用基板１３を接合した図である。図３において、ＭＥＭＳ素子ウエハの各ＭＥＭＳ素子本体１１の一側１１ｂの表面部の金ボール１２に、第１実装用基板１３の一側に位置する一側電極パッド１５を接合する。この第１実装用基板１３の他側には他側電極パッド１４が設けられており、第１実装用基板１３の一側と他側とが、ビアホールの導電部材を介して電気的に結合されている。 FIG. 3 is a view in which a first mounting substrate 13 is bonded to one side 11 b of the MEMS element body 11 in a wafer state via a gold ball 12. In FIG. 3, one-side electrode pad 15 located on one side of the first mounting substrate 13 is bonded to the gold ball 12 on the surface portion of the one-side 11 b of each MEMS element main body 11 of the MEMS element wafer. The other side electrode pad 14 is provided on the other side of the first mounting substrate 13, and one side and the other side of the first mounting substrate 13 are electrically coupled via a conductive member of a via hole. ing.
図４は、ウエハ状態のＭＥＭＳ素子本体１１を劈開して得られた機能素子であるＭＥＭＳ素子１０を示す図である。このＭＥＭＳ素子１０は、ＭＥＭＳ素子本体１１の一側１１ｂの表面部に、金ボール１２を介して第１実装用基板１３の一側電極パッド１５が接合されている。 FIG. 4 is a diagram showing the MEMS element 10 which is a functional element obtained by cleaving the MEMS element body 11 in a wafer state. In the MEMS element 10, the one-side electrode pad 15 of the first mounting substrate 13 is bonded to the surface portion of the one-side 11 b of the MEMS element body 11 through the gold balls 12.
このＭＥＭＳ素子１０の一側１１ｂには、バンプである金ボール１２が存在することにより、ＭＥＭＳ素子本体１１の一側１１ｂと第１実装用基板１３の一面と金ボール１２とで形成される第１空間部Ｓ１が確保される。この第１空間部Ｓ１により、ＭＥＭＳ素子本体１１の一側１１ｂに露出される機能部材（可動部材）の動きが妨げられ難くなる。 A gold ball 12 as a bump is present on one side 11 b of the MEMS element 10, whereby a first side 11 b of the MEMS element body 11, one surface of the first mounting substrate 13, and a gold ball 12 are formed. One space portion S1 is secured. The movement of the functional member (movable member) exposed to the one side 11b of the MEMS element body 11 is difficult to be prevented by the first space portion S1.
図５は、回路基板２０に第２実装用基板２５を接合した図である。図５において、第２実装用基板２５（もしくは、ＭＥＭＳ素子本体１１）と接合するための第１電極パッド２２と、第１実装用基板１３の他側電極パッド１４とワイヤード接続するための第２電極パッド２３とを有する回路基板２０を用意する。 FIG. 5 is a diagram in which the second mounting board 25 is bonded to the circuit board 20. In FIG. 5, a first electrode pad 22 for bonding to the second mounting substrate 25 (or the MEMS element body 11) and a second connection for wired connection to the other electrode pad 14 of the first mounting substrate 13. A circuit board 20 having electrode pads 23 is prepared.
次に、ＭＥＭＳ素子本体１１の他側１１ａと回路基板２０との間を接合するための第２実装用基板２５を用意する。この第２実装用基板２５の一面には、一側電極パッド２６が設けられており、他面には他側電極パッド２８が設けられている。この第２実装用基板２５の他面の他側電極パッド２８を、バンプである金ボール２４を介して回路基板２０の第１電極パッド２２に接合する。また、第２実装用基板２５の一側電極パッド２６に、バンプである金ボール２７を予め接合する。 Next, a second mounting substrate 25 for joining the other side 11a of the MEMS element body 11 and the circuit board 20 is prepared. One side electrode pad 26 is provided on one surface of the second mounting substrate 25, and the other side electrode pad 28 is provided on the other surface. The other electrode pad 28 on the other surface of the second mounting substrate 25 is bonded to the first electrode pad 22 of the circuit board 20 via the gold balls 24 that are bumps. Further, a gold ball 27 as a bump is bonded in advance to the one-side electrode pad 26 of the second mounting substrate 25.
ここで、金ボール２４、２７は、ＭＥＭＳ素子１０の金ボール１２と同配置に設ける。すなわち、後述するようにしてＭＥＭＳ素子１０を実装した際に、ＭＥＭＳ素子１０の金ボール１２と、第２実装用基板２５の一側電極パッド２６上の金ボール２７と、回路基板２０の第１電極パッド２２上の金ボール２４とが対向するように（一直線上に位置するように）、金ボール２４、２７を配設する。 Here, the gold balls 24 and 27 are provided in the same arrangement as the gold balls 12 of the MEMS element 10. That is, when the MEMS element 10 is mounted as described later, the gold ball 12 of the MEMS element 10, the gold ball 27 on the one-side electrode pad 26 of the second mounting substrate 25, and the first of the circuit board 20. The gold balls 24 and 27 are disposed so that the gold balls 24 on the electrode pad 22 face each other (so as to be positioned on a straight line).
回路基板２０は内部に所要の回路部を有しており、また、第２実装用基板２５は一側と他側とがビアホールを介して電気的に結合されている。これらの回路基板２０、第１実装用基板１３、および第２実装用基板２５は、ＬＴＣＣ（Ｌｏｗ Ｔｅｍｐｅｒａｔｕｒｅ Ｃｏ−ｆｉｒｅｄ Ｃｅｒａｍｉｃ；低温同時焼成セラミック）基板で構成することがよい。また、ＭＥＭＳ素子本体１１は、例えばシリコンで構成され、第１実装用基板１３と第２実装用基板２５は、例えばセラミックで構成されている。 The circuit board 20 has a required circuit portion therein, and the second mounting board 25 is electrically coupled to one side and the other side via via holes. The circuit board 20, the first mounting board 13, and the second mounting board 25 may be configured by a LTCC (Low Temperature Co-fired Ceramic) board. The MEMS element body 11 is made of, for example, silicon, and the first mounting board 13 and the second mounting board 25 are made of, for example, ceramic.
図６は、第２実装用基板２５を接合した回路基板２０にＭＥＭＳ素子１０をフリップチップ接合した図である。図６において、図４のＭＥＭＳ素子１０の第１実装用基板１３の他側電極パッド１４側を、ボンディングツール（例えば、フリップチップボンダー）で真空吸着し、図５の回路基板２０に接合されている第２実装用基板２５上に載置し接合する。すなわち、この第２実装用基板２５の一面の一側電極パッド２６をバンプである金ボール２７を介して、ＭＥＭＳ素子本体１１の他側１１ａの表面部であって機能部材（可動部材）が露出していない部分に接合する。このとき、ＭＥＭＳ素子１０の金ボール１２と第２実装用基板２５上の金ボール２７（回路基板２０上の金ボール２４）とが対向するように、ＭＥＭＳ素子１０を載置し接合する。 FIG. 6 is a diagram in which the MEMS element 10 is flip-chip bonded to the circuit board 20 to which the second mounting substrate 25 is bonded. 6, the other electrode pad 14 side of the first mounting substrate 13 of the MEMS element 10 of FIG. 4 is vacuum-sucked by a bonding tool (for example, a flip chip bonder) and bonded to the circuit substrate 20 of FIG. 5. It is placed on and bonded to the second mounting substrate 25. That is, the functional member (movable member) is exposed at the surface portion of the other side 11a of the MEMS element body 11 through the gold ball 27 as a bump, with the one-side electrode pad 26 on the one surface of the second mounting substrate 25 interposed therebetween. Join the parts that are not. At this time, the MEMS element 10 is placed and bonded so that the gold ball 12 of the MEMS element 10 and the gold ball 27 on the second mounting substrate 25 (the gold ball 24 on the circuit board 20) face each other.
そして、このＭＥＭＳ素子１０の他側１１ａには、バンプである金ボール２７が存在することにより、ＭＥＭＳ素子本体１１の他側１１ａと第２実装用基板２５の一面と金ボール２７とで形成される第２空間部Ｓ２が確保される。この第２空間部Ｓ２により、ＭＥＭＳ素子本体１１の他側１１ａに露出される機能部材（可動部材）の動きが妨げられ難くなる。 And, on the other side 11 a of the MEMS element 10, the gold ball 27 as a bump exists, so that the other side 11 a of the MEMS element body 11, one surface of the second mounting substrate 25, and the gold ball 27 are formed. The second space S2 is secured. The movement of the functional member (movable member) exposed to the other side 11a of the MEMS element body 11 is less likely to be hindered by the second space S2.
図７は、本発明の半導体装置１００を示す図であり、図６の状態から、第１実装用基板１３の他側電極パッド１４と回路基板２０の第２電極パッド２３とが、ボンディングワイヤ３０によってワイヤード接続されている。なお、ボンディングワイヤ３０以外の構成は図６と同様である。 FIG. 7 is a view showing the semiconductor device 100 of the present invention. From the state of FIG. 6, the other electrode pad 14 of the first mounting substrate 13 and the second electrode pad 23 of the circuit substrate 20 are bonded to the bonding wire 30. Wired connection by. The configuration other than the bonding wire 30 is the same as that shown in FIG.
このようにして、一側１１ｂの表面部の一部に可動部材を露出し、他側１１ａの表面部の一部に他の可動部材を露出しているＭＥＭＳ素子本体１１と、
このＭＥＭＳ素子本体１１の一側表面部であって可動部材が露出していない部分に金ボール１２を介して一側に設けられた一側電極パッド１５が接合され、他側に他側電極パッド１４が設けられた第１実装用基板１３と、
一面の一側電極パッド２６が金ボール２７を介してＭＥＭＳ素子本体１１の他側表面部であって可動部材が露出していない部分と接合され、かつ他面の他側電極パッド２８がバンプを接合可能な第２実装用基板２５と、
回路基板本体２１の一面に、第２実装用基板２５の他側電極パッド２８に金ボール２４を介して接合された第１電極パッド２２と、第１実装用基板１３の他側電極パッド１４とワイヤード接続された第２電極パッド２３とを有する回路基板２０とを備え、
ＭＥＭＳ素子本体１１の一側１１ｂに露出された可動部材の部分に金ボール１２による第１空間部Ｓ１が設けられ、かつ他側１１ａに露出された可動部材の部分に金ボール２７による第２空間部Ｓ２が設けられ、
ＭＥＭＳ素子本体１１の一側１１ｂの金ボール１２と、第２実装用基板２５の一側電極パッド２６上の金ボール２７と、回路基板２０の第１電極パッド２２上の金ボール２４とが一直線上に位置する、本発明の半導体装置１００が構成される。
In this way, the MEMS element body 11 exposing the movable member on a part of the surface part of the one side 11b and exposing the other movable member on a part of the surface part of the other side 11a,
One side electrode pad 15 provided on one side is bonded to the other side of the MEMS element body 11 through a gold ball 12 to a portion where the movable member is not exposed, and the other side electrode pad is connected to the other side. A first mounting board 13 provided with 14;
One side electrode pad 26 on one side is joined to the other side surface portion of the MEMS element body 11 via the gold ball 27 and the movable member is not exposed, and the other side electrode pad 28 on the other side is bumped. A second mounting substrate 25 that can be joined;
A first electrode pad 22 bonded to the other electrode pad 28 of the second mounting substrate 25 via a gold ball 24 on one surface of the circuit board main body 21; and the other electrode pad 14 of the first mounting substrate 13; A circuit board 20 having a second electrode pad 23 wired-connected,
A first space S1 is formed by the gold ball 12 in the portion of the movable member exposed on the one side 11b of the MEMS element body 11, and a second space by the gold ball 27 is formed in the portion of the movable member exposed on the other side 11a. Part S2 is provided,
The gold ball 12 on one side 11b of the MEMS element body 11, the gold ball 27 on the one side electrode pad 26 of the second mounting substrate 25, and the gold ball 24 on the first electrode pad 22 of the circuit board 20 are straightened. A semiconductor device 100 of the present invention located on the line is configured.
本発明によれば、ＭＥＭＳ素子本体１１の他側１１ａと一側１１ｂに可動部材が露出するようにして面積を小さくしたＭＥＭＳ素子１０をフリップチップ実装するに際し、ＭＥＭＳ素子本体１１に第１実装用基板１３を接合し、その第１実装用基板１３ごとボンディングツールで吸着して、回路基板２０へのフリップチップ実装が実現できる。また、ＭＥＭＳ素子本体１１の他側１１ａと一側１１ｂに金ボール１２、２７を各々介して実装するため、ＭＥＭＳ素子本体１１の他側１１ａと一側１１ｂに第１空間部Ｓ１、第２空間部Ｓ２が形成され、可動部（機能部材）に障害を与えることが避けることができる。 According to the present invention, when flip-chip mounting the MEMS element 10 having a small area so that the movable member is exposed on the other side 11a and one side 11b of the MEMS element body 11, the first mounting is performed on the MEMS element body 11. The substrate 13 is bonded, and the first mounting substrate 13 is sucked together with a bonding tool, so that flip-chip mounting onto the circuit substrate 20 can be realized. Further, since the gold balls 12 and 27 are mounted on the other side 11a and the one side 11b of the MEMS element body 11, respectively, the first space S1 and the second space are formed on the other side 11a and the one side 11b of the MEMS element body 11. The part S2 is formed, and it can be avoided that the movable part (functional member) is damaged.
また、ＭＥＭＳ素子本体１１を挟むようにして、一側１１ｂの金ボール１２と他側１１ａの金ボール２７とが対向して配設されているため、ＭＥＭＳ素子本体１１を回路基板２０に接合する際の力（押圧力）が、金ボール１２から金ボール２７に伝えられ、ＭＥＭＳ素子本体１１にかかる力が軽減される。しかも、四隅に配置された複数の金ボール２７が同時に接合されるため、ＭＥＭＳ素子本体１１の一点に大きな荷重がかかることがない。このため、押圧力を高めてもＭＥＭＳ素子本体１１が破損するおそれがなくなり、ＭＥＭＳ素子本体１１と回路基板２０（第２実装用基板２５）との接合強度を高めることが可能となる。 Further, since the gold ball 12 on the one side 11b and the gold ball 27 on the other side 11a are disposed so as to sandwich the MEMS element main body 11, the MEMS element main body 11 is bonded to the circuit board 20. A force (pressing force) is transmitted from the gold ball 12 to the gold ball 27, and the force applied to the MEMS element body 11 is reduced. In addition, since the plurality of gold balls 27 arranged at the four corners are joined at the same time, a large load is not applied to one point of the MEMS element body 11. For this reason, even if the pressing force is increased, there is no possibility that the MEMS element body 11 is damaged, and the bonding strength between the MEMS element body 11 and the circuit board 20 (second mounting substrate 25) can be increased.
加えて、第２実装用基板２５の一側電極パッド２６に金ボール２７を予め接合した後に、ＭＥＭＳ素子１０をフリップチップ接合するため、ＭＥＭＳ素子本体１１の破損をより防止できる。すなわち、ＭＥＭＳ素子本体１１に金ボール２７を１個ずつ接合する場合、一点に大きな接合荷重がかかり、ＭＥＭＳ素子本体１１が破損するおそれがあるが、第２実装用基板２５側に予め金ボール２７を接合することで、ＭＥＭＳ素子本体１１の破損をより防止できる。 In addition, since the MEMS element 10 is flip-chip bonded after the gold ball 27 is bonded to the one-side electrode pad 26 of the second mounting substrate 25 in advance, the MEMS element body 11 can be further prevented from being damaged. That is, when the gold balls 27 are bonded to the MEMS element body 11 one by one, a large bonding load is applied to one point, and the MEMS element body 11 may be damaged. However, the gold balls 27 are previously placed on the second mounting substrate 25 side. The MEMS element body 11 can be further prevented from being damaged by bonding.
さらに、第２実装用基板２５を用いることにより、ＭＥＭＳ素子本体１１を回路基板２０に直接接合する場合に比して、接合時の加重と超音波を充分に掛けて強制的に接合できるため、回路基板２０の第１電極パッド２２、第２電極パッド２３として、金メッキがより薄いものを使用できる。従って、一般的に用いられる汎用の回路基板２０を採用することが可能になる。また、第２実装用基板２５を用いることにより、ＭＥＭＳ素子本体１１にかかる応力を軽減することが可能となる。すなわち、ＭＥＭＳ素子本体１１がシリコン製、第１実装用基板１３がセラミック製で、熱を加えて接合を行う場合、熱膨張率の違いによってＭＥＭＳ素子本体１１に熱応力（そり）が発生する。これに対して、ＭＥＭＳ素子本体１１をセラミック製の第１実装用基板１３、第２実装用基板２５で挟むことで、熱応力が緩和（相殺）されるものである。 Furthermore, by using the second mounting substrate 25, compared to the case where the MEMS element body 11 is directly bonded to the circuit board 20, it can be forcibly bonded by sufficiently applying a weight and ultrasonic waves during bonding, As the first electrode pad 22 and the second electrode pad 23 of the circuit board 20, those with thinner gold plating can be used. Therefore, it is possible to employ a general-purpose circuit board 20 that is generally used. Further, by using the second mounting substrate 25, the stress applied to the MEMS element body 11 can be reduced. That is, when the MEMS element body 11 is made of silicon and the first mounting substrate 13 is made of ceramic and bonding is performed by applying heat, thermal stress (warping) is generated in the MEMS element body 11 due to a difference in thermal expansion coefficient. On the other hand, thermal stress is relieved (cancelled) by sandwiching the MEMS element body 11 between the first mounting substrate 13 and the second mounting substrate 25 made of ceramic.
以上に説明した実施形態では、第２実装用基板２５を設けているが、この第２実装用基板２５は必ずしも必要ではなく、省略することができる。この場合には、ＭＥＭＳ素子１０の他側１１ａが、回路基板２０の第１電極パッド２２に金ボール２７を介して接合され、ＭＥＭＳ素子１０の金ボール１２と、回路基板２０上の金ボール２７とが対向することになる。この場合にも、ＭＥＭＳ素子１０をボンディングツールで吸着して、回路基板２０へのフリップチップ実装が実現でき、第２空間Ｓ２も形成できる。また、ＭＥＭＳ素子本体１１を挟むようにして金ボール１２、２７が対向するため、回路基板２０に接合する際のＭＥＭＳ素子本体１１の破損が防止され、ＭＥＭＳ素子本体１１と回路基板２０との接合強度を高めることが可能となる。 In the embodiment described above, the second mounting substrate 25 is provided, but the second mounting substrate 25 is not necessarily required and can be omitted. In this case, the other side 11a of the MEMS element 10 is bonded to the first electrode pad 22 of the circuit board 20 via the gold ball 27, and the gold ball 12 of the MEMS element 10 and the gold ball 27 on the circuit board 20 are joined. Will face each other. Also in this case, the MEMS element 10 can be adsorbed with a bonding tool to realize flip-chip mounting on the circuit board 20, and the second space S2 can also be formed. Further, since the gold balls 12 and 27 face each other with the MEMS element body 11 sandwiched therebetween, the MEMS element body 11 is prevented from being damaged when bonded to the circuit board 20, and the bonding strength between the MEMS element body 11 and the circuit board 20 is increased. It becomes possible to raise.
ただ、ＭＥＭＳ素子１０の他側１１ａ、すなわちＭＥＭＳ素子本体１１が、金ボール２７を介して、回路基板２０の第１電極パッド２２に接合されるので、接合時の加重・超音波の印加できるレベルが低く制限される。従って、充分な接合状態を確保するために、回路基板２０の第１電極パッド２２の金メッキを通常のものより厚くするなどの処理が必要とされる場合がある。 However, since the other side 11 a of the MEMS element 10, that is, the MEMS element body 11 is bonded to the first electrode pad 22 of the circuit board 20 via the gold ball 27, a level at which weighting and ultrasonic waves can be applied during bonding. Is limited low. Therefore, in order to ensure a sufficient bonding state, a process such as making the gold plating of the first electrode pads 22 of the circuit board 20 thicker than usual may be required.
また、上記の実施形態では、ＭＥＭＳ素子本体１１などの四隅に金ボール１２、２７、２４を配設しているが、ＭＥＭＳ素子本体１１の大きさや必要な接合強度などによっては、図８に示すように、さらに多くの金ボール１２、２７を配置してもよい。なお、この図８では、第２実装用基板２５を省略した場合を示している。 In the above embodiment, the gold balls 12, 27, and 24 are disposed at the four corners of the MEMS element body 11, etc., but depending on the size of the MEMS element body 11 and the required bonding strength, it is shown in FIG. In this way, more gold balls 12 and 27 may be arranged. FIG. 8 shows a case where the second mounting substrate 25 is omitted.
以上の説明では、機能素子としてＭＥＭＳ素子の場合について説明したが、本発明は、ＭＥＭＳ素子に限ることなく、機能素子本体の両面に機能部材が露出するように構成される電子デバイス、例えば両面に電極を配置した弾性表面波素子、にも同様に適用することができる。 In the above description, the case where the MEMS element is used as the functional element has been described. However, the present invention is not limited to the MEMS element, and the electronic device configured such that the functional member is exposed on both sides of the functional element body, for example, on both sides. The present invention can be similarly applied to a surface acoustic wave element in which electrodes are arranged.
１ ＭＥＭＳ素子本体
２Ａ 第１接点
２Ｂ 第２接点
２Ｃ 共通接点
３Ａ 第１駆動回路
３Ｂ 第２駆動回路
３Ｃ 接極子
５ 共通端子
６ 第１出力端子
７ 第２出力端子
１０ ＭＥＭＳ素子（機能素子）
１１ ＭＥＭＳ素子本体（機能素子本体）
１１ａ 他側
１１ｂ 一側
１２ 金ボール（バンプ）
１３ 第１実装用基板
１４ 他側電極パッド
１５ 一側電極パッド
２０ 回路基板
２１ 回路基板本体
２２ 第１電極パッド
２３ 第２電極パッド
２４ 金ボール（バンプ）
２５ 第２実装用基板
２６ 一側電極パッド
２７ 金ボール（バンプ）
２８ 他側電極パッド
３０ ボンディングワイヤ
１００ 半導体装置
Ｓ１ 第１空間部
Ｓ２ 第２空間部
DESCRIPTION OF SYMBOLS 1 MEMS element main body 2A 1st contact 2B 2nd contact 2C Common contact 3A 1st drive circuit 3B 2nd drive circuit 3C Armature 5 Common terminal 6 1st output terminal 7 2nd output terminal 10 MEMS element (functional element)
11 MEMS element body (functional element body)
11a Other side 11b One side 12 Gold ball (bump)
13 First mounting substrate 14 Other side electrode pad 15 One side electrode pad 20 Circuit board 21 Circuit board body 22 First electrode pad 23 Second electrode pad 24 Gold ball (bump)
25 Second mounting substrate 26 One-side electrode pad 27 Gold ball (bump)
28 Other side electrode pad 30 Bonding wire 100 Semiconductor device S1 1st space part S2 2nd space part
Claims (4)
前記機能素子本体の前記一側表面部であって機能部材が露出していない部分にバンプを介して接合された一側電極パッドが一側に設けられ、他側に他側電極パッドが設けられた第１実装用基板と、
回路基板本体の一面に、前記機能素子本体の前記他側表面部であって機能部材が露出していない部分にバンプを介して接合された第１電極パッドと、前記第１実装用基板の他側電極パッドとワイヤード接続された第２電極パッドとを有する回路基板とを備え、
前記機能素子本体の一側に露出された機能部材の部分に前記バンプによる第１空間部を設け、かつ他側に露出された機能部材の部分に前記バンプによる第２空間部を設け、
前記機能素子本体の一側のバンプと他側のバンプとを対向して配設した、ことを特徴とする半導体装置。 A functional element body exposing a functional member on a part of the surface portion on one side, and exposing another functional member on a portion of the surface portion on the other side;
One side electrode pad joined via a bump to a portion of the functional element body on the one side surface portion where the functional member is not exposed is provided on one side, and the other side electrode pad is provided on the other side. A first mounting board;
A first electrode pad bonded to one surface of the circuit board body on the other surface portion of the functional element body through which a functional member is not exposed, and a first mounting board; A circuit board having a side electrode pad and a second electrode pad wired-connected,
Providing a first space portion by the bump in a portion of the functional member exposed on one side of the functional element body, and providing a second space portion by the bump in a portion of the functional member exposed on the other side;
A semiconductor device, wherein a bump on one side of the functional element body and a bump on the other side are arranged to face each other.
前記第２実装用基板の一面の一側電極パッドが、バンプを介して前記機能素子本体の前記他側表面部であって機能部材が露出していない部分と接合され、
前記第２実装用基板の他面の他側電極パッドが、バンプを介して前記回路基板の前記第１電極パッドと接合されている、ことを特徴とする請求項１に記載の半導体装置。 A second mounting board is provided between the other surface portion of the functional element body and the circuit board;
The one-side electrode pad on one surface of the second mounting substrate is bonded to a portion of the other surface portion of the functional element body that is not exposed to the functional member via a bump,
2. The semiconductor device according to claim 1, wherein the other electrode pad on the other surface of the second mounting substrate is bonded to the first electrode pad of the circuit board via a bump.
前記機能素子ウエハの各機能素子本体の一側表面部であって機能部材が露出していない部分にバンプを形成するステップと、
前記機能素子ウエハの各機能素子本体の一側表面部のバンプに、他側に他側電極パッドを設けた第１実装用基板の一側の一側電極パッドを接合するステップと、
前記第１実装用基板が接合された機能素子ウエハを劈開して、機能素子本体の一側に露出された機能部材の部分に前記バンプによる第１空間部を有する、チップ状の機能素子を形成するステップと、
前記機能素子本体と接合するための第１電極パッドと、前記第１実装用基板の他側電極パッドとワイヤード接続するための第２電極パッドとを有する回路基板を用意するステップと、
前記回路基板の第１電極パッド上に、前記チップ状の機能素子の一側のバンプと同配置のバンプを形成するステップと、
前記チップ状の機能素子を、前記第１実装用基板の他側をボンディングツールにより吸着して前記回路基板と対向させ、前記回路基板の前記第１電極パッド上のバンプと前記機能素子本体の他側表面部であって機能素子が露出していない部分とを、前記機能素子本体の一側のバンプと前記回路基板上のバンプとが対向するように接合し、前記回路基板上のバンプによる第２空間部を形成するステップと、
前記第１実装用基板の他側電極パッドと前記回路基板の第２電極パッドとをワイヤード接続するステップと、
を有することを特徴とする半導体装置の製造方法。 Prepare a functional element wafer in which the functional element body is exposed in a part of the surface part on one side and the functional element body is exposed in the part of the other side surface part in an array. And steps to
Forming a bump on a portion of one side surface portion of each functional element body of the functional element wafer where the functional member is not exposed;
Bonding one side electrode pad on one side of the first mounting substrate having the other side electrode pad provided on the other side to a bump on one side surface portion of each functional element body of the functional element wafer;
The functional element wafer to which the first mounting substrate is bonded is cleaved to form a chip-shaped functional element having the first space portion formed by the bumps in the portion of the functional member exposed on one side of the functional element body. And steps to
Providing a circuit board having a first electrode pad for bonding to the functional element body and a second electrode pad for wired connection to the other electrode pad of the first mounting board;
Forming a bump having the same arrangement as a bump on one side of the chip-like functional element on the first electrode pad of the circuit board;
The chip-like functional element is attached to the other side of the first mounting substrate with a bonding tool so as to face the circuit board, and the bumps on the first electrode pads of the circuit board and the functional element main body A portion of the side surface portion where the functional element is not exposed is joined so that a bump on one side of the functional element body and a bump on the circuit board face each other, Forming two spaces,
Wire-connecting the other electrode pad of the first mounting substrate and the second electrode pad of the circuit board;
A method for manufacturing a semiconductor device, comprising:
前記第２実装用基板の一面の一側電極パッド上に、前記チップ状の機能素子の一側のバンプと同配置のバンプを形成し、前記第２実装用基板の他面の他側電極パッドを前記回路基板の前記第１電極パッドのバンプに接合し、前記第２実装用基板の一側電極パッド上のバンプと前記機能素子本体の他側表面部であって機能素子が露出していない部分とを、前記機能素子本体の一側のバンプと前記第２実装用基板上のバンプとが対向するように接合する、ことを特徴とする請求項３に記載の半導体装置の製造方法。 Preparing a second mounting substrate for bonding between the other surface portion of the functional element body and the circuit board;
A bump having the same arrangement as the bump on one side of the chip-like functional element is formed on one side electrode pad on one side of the second mounting substrate, and the other side electrode pad on the other side of the second mounting substrate. Are bonded to the bumps of the first electrode pads of the circuit board, and the functional elements are not exposed at the bumps on the one side electrode pads of the second mounting board and the other side surface portion of the functional element body. 4. The method of manufacturing a semiconductor device according to claim 3, wherein the portion is bonded so that a bump on one side of the functional element body and a bump on the second mounting substrate face each other.
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