JP2011139215A5

JP2011139215A5 -

Info

Publication number: JP2011139215A5
Application number: JP2009297056A
Authority: JP
Filing date: 2009-12-28
Publication date: 2012-08-30

Description

［適用例１］本適用例に係る弾性表面波デバイスは、Ｃ面を主面とするサファイア基板と、前記サファイア基板の主面に設けられる窒化アルミニウム膜と、前記窒化アルミニウム膜の表面に設けられ弾性表面波を励振させる櫛歯電極と、前記櫛歯電極及び前記窒化アルミニウム膜の表面を覆う二酸化シリコン膜と、を有することを特徴とする。 Application Example 1] The surface acoustic wave device according to this application example, a sapphire substrate whose principal C-plane, and the aluminum nitride film is found provided on the main surface of the sapphire substrate, provided on the surface of the aluminum nitride film and having a comb-tooth electrodes for exciting the al Re SAW, and a silicon dioxide film covering the surface of the comb electrode and the aluminum nitride film.

Claims

A sapphire substrate whose main surface is a C surface;
And the aluminum nitride film is found provided on the main surface of the sapphire substrate,
And the comb electrodes for exciting the provided et Re SAW on a surface of said aluminum nitride film,
A silicon dioxide film covering the surfaces of the comb electrode and the aluminum nitride film;
A surface acoustic wave device characterized by having.

The surface acoustic wave device according to claim 1, wherein the surface acoustic wave excited by the comb electrode is a primary sezawa wave.

Let the thickness ta of the aluminum nitride film, the thickness ts of the silicon dioxide film, and the wavelength λ of the surface acoustic wave,
The normalized film thickness of the aluminum nitride film is KH−AlN = (2π / λ) · ta,
The normalized film thickness of the silicon dioxide film is KH-SiO ₂ = (2π / λ) · ts,
When the relationship of each of the normalized film thicknesses given by
Coordinates _{1 (KH-SiO 2, KH} -AlN) = (2.00,0.88)
Coordinate _{2 (KH-SiO 2, KH} -AlN) = (2.50,1.13)
Coordinates _{3 (KH-SiO 2, KH} -AlN) = (2.76,1.42)
Coordinates _{4 (KH-SiO 2, KH} -AlN) = (2.77,1.75)
Coordinate _{5 (KH-SiO 2, KH} -AlN) = (2.60,3.00)
Coordinates _{6 (KH-SiO 2, KH} -AlN) = (2.57,4.00)
Coordinate _{7 (KH-SiO 2, KH} -AlN) = (2.60,5.00)
Coordinate _{8 (KH-SiO 2, KH} -AlN) = (2.74,5.96)
Coordinates _{9 (KH-SiO 2, KH} -AlN) = (2.80,6.83)
Coordinates _{10 (KH-SiO 2, KH} -AlN) = (2.80,7.83)
Coordinates _{11 (KH-SiO 2, KH} -AlN) = (2.82,8.67)
Coordinates _{12 (KH-SiO 2, KH} -AlN) = (2.82,10.00)
Coordinates _{13 (KH-SiO 2, KH} -AlN) = (2.00,10.00)
The KH-AlN and the KH-SiO ₂ included in a region connecting these coordinates in the order of the coordinate 1 to the coordinate 13 and connecting the coordinate 13 and the coordinate 1 are used. Item 2. A surface acoustic wave device according to item 2.

Let the thickness ta of the aluminum nitride film, the thickness ts of the silicon dioxide film, and the wavelength λ of the surface acoustic wave,
The normalized film thickness of the aluminum nitride film is KH−AlN = (2π / λ) · ta,
The normalized film thickness of the silicon dioxide film is KH-SiO ₂ = (2π / λ) · ts,
When the relationship of each of the normalized film thicknesses given by
Coordinates _{1 (KH-SiO 2, KH} -AlN) = (2.00,2.25)
Coordinate _{2 (KH-SiO 2, KH} -AlN) = (2.10,1.75)
Coordinates _{3 (KH-SiO 2, KH} -AlN) = (2.17,0.96)
Coordinates _{4 (KH-SiO 2, KH} -AlN) = (2.50,1.13)
Coordinate _{5 (KH-SiO 2, KH} -AlN) = (2.76,1.42)
Coordinates _{6 (KH-SiO 2, KH} -AlN) = (2.77,1.75)
Coordinate _{7 (KH-SiO 2, KH} -AlN) = (2.60,3.00)
Coordinate _{8 (KH-SiO 2, KH} -AlN) = (2.57,4.00)
Coordinates _{9 (KH-SiO 2, KH} -AlN) = (2.60,4.67)
Coordinates _{10 (KH-SiO 2, KH} -AlN) = (2.51,5.00)
Coordinates _{11 (KH-SiO 2, KH} -AlN) = (2.51,5.33)
Coordinates _{12 (KH-SiO 2, KH} -AlN) = (2.61,5.92)
Coordinates _{13 (KH-SiO 2, KH} -AlN) = (2.61,7.00)
Coordinates _{14 (KH-SiO 2, KH} -AlN) = (2.46,7.83)
Coordinates _{15 (KH-SiO 2, KH} -AlN) = (2.45,10.00)
Coordinates _{16 (KH-SiO 2, KH} -AlN) = (2.00,10.00)
The KH-AlN and the KH-SiO ₂ included in a region connecting these coordinates in the order of coordinate 1 to coordinate 16 and connecting coordinate 16 and coordinate 1 are used. Item 2. A surface acoustic wave device according to item 2.

Let the thickness ta of the aluminum nitride film, the thickness ts of the silicon dioxide film, and the wavelength λ of the surface acoustic wave,
The normalized film thickness of the aluminum nitride film is KH−AlN = (2π / λ) · ta,
The normalized film thickness of the silicon dioxide film is KH-SiO ₂ = (2π / λ) · ts,
When the relationship of each of the normalized film thicknesses given by
Coordinates _{1 (KH-SiO 2, KH} -AlN) = (2.00,3.46)
Coordinate _{2 (KH-SiO 2, KH} -AlN) = (2.27,2.00)
Coordinates _{3 (KH-SiO 2, KH} -AlN) = (2.50,1.13)
Coordinates _{4 (KH-SiO 2, KH} -AlN) = (2.76,1.42)
Coordinate _{5 (KH-SiO 2, KH} -AlN) = (2.77,1.75)
Coordinates _{6 (KH-SiO 2, KH} -AlN) = (2.62,2.83)
Coordinate _{7 (KH-SiO 2, KH} -AlN) = (2.41,3.50)
Coordinate _{8 (KH-SiO 2, KH} -AlN) = (2.00,5.92)
The KH-AlN and the KH-SiO ₂ included in a region connecting these coordinates in the order of the coordinate 1 to the coordinate 8 and connecting the coordinate 8 and the coordinate 1 are used. Item 2. A surface acoustic wave device according to item 2.

Let the thickness ta of the aluminum nitride film, the thickness ts of the silicon dioxide film, and the wavelength λ of the surface acoustic wave,
The normalized film thickness of the aluminum nitride film is KH−AlN = (2π / λ) · ta,
The normalized film thickness of the silicon dioxide film is KH-SiO ₂ = (2π / λ) · ts,
When the relationship of each of the normalized film thicknesses given by
Coordinates _{1 (KH-SiO 2, KH} -AlN) = (2.00,3.96)
Coordinate _{2 (KH-SiO 2, KH} -AlN) = (2.39,2.00)
Coordinates _{3 (KH-SiO 2, KH} -AlN) = (2.64,1.33)
Coordinates _{4 (KH-SiO 2, KH} -AlN) = (2.76,1.42)
Coordinate _{5 (KH-SiO 2, KH} -AlN) = (2.77,1.75)
Coordinates _{6 (KH-SiO 2, KH} -AlN) = (2.72,2.13)
Coordinate _{7 (KH-SiO 2, KH} -AlN) = (2.50,2.58)
Coordinate _{8 (KH-SiO 2, KH} -AlN) = (2.28,3.58)
Coordinates _{9 (KH-SiO 2, KH} -AlN) = (2.00,5.13)
The KH-AlN and the KH-SiO ₂ included in a region connecting these coordinates in the order of coordinate 1 to coordinate 9 and connecting coordinate 9 to coordinate 1 are used. Item 2. A surface acoustic wave device according to item 2.

An oscillator using the surface acoustic wave device according to any one of claims 1 to 6.

A module device using the surface acoustic wave device according to any one of claims 1 to 6.