JP2011125770A - Method for recycling treated waste liquid - Google Patents
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J39/00—Cation exchange; Use of material as cation exchangers; Treatment of material for improving the cation exchange properties
- B01J39/04—Processes using organic exchangers
- B01J39/07—Processes using organic exchangers in the weakly acidic form
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J49/00—Regeneration or reactivation of ion-exchangers; Apparatus therefor
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- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
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- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
- C02F2103/36—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from the manufacture of organic compounds
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Abstract
Description
本発明は、テトラアルキルアンモニウムイオンを含有する現像廃液から水酸化テトラアルキルアンモニムを回収する際に排出される処理廃液の再利用方法に関する。 The present invention relates to a method for reusing a processing waste liquid discharged when recovering a tetraalkylammonium hydroxide from a developing waste liquid containing tetraalkylammonium ions.
半導体、及び液晶製造工程において、ウエハー、ガラス等の基板上にパターンを形成する場合、基板表面に形成した金属層にノボラック樹脂、ポリスチレン樹脂等からなる、ネガ型或いはポジ型のレジストを塗布し、これに、該パターン形成用のフォトマスクを介して露光し、未硬化部分或いは硬化部分に対して、水酸化テトラアルキルアンモニウム(以下、TAAHと称す)を主成分とする現像液を使用して現像後、エッチングを行って上記金属層にパターンを形成する現像工程が行われており、該工程により、テトラアルキルアンモニウムイオン(以下、TAAイオンと称す)を含有する現像廃液が排出される。 In semiconductor and liquid crystal manufacturing processes, when forming a pattern on a substrate such as a wafer or glass, a negative or positive resist made of novolac resin, polystyrene resin or the like is applied to a metal layer formed on the substrate surface, This is exposed through the photomask for pattern formation, and the uncured portion or the cured portion is developed using a developer mainly composed of tetraalkylammonium hydroxide (hereinafter referred to as TAAH). Thereafter, a developing process is performed in which a pattern is formed on the metal layer by etching, and a developing waste solution containing tetraalkylammonium ions (hereinafter referred to as TAA ions) is discharged.
また、現像液による現像後には、基板上に残存する現像液を除去する為に超純水による洗浄、所謂リンス工程が行われており、かかるリンス工程後には、TAAイオンを含有するリンス廃液が排出される。これら現像廃液及びリンス廃液は、通常、それぞれ混合された後、TAAイオンを含有する現像廃液として排出されている。近年、半導体、及び液晶の生産量が増大するにつれて、上記現像液の消費量が増加しており、これらTAAイオンを含有する現像廃液の排出量も増加している。最近では、このTAAイオンを含有する現像廃液よりTAAHを回収、精製して再利用するTAAイオンを含有現像廃液の回収方法が提案されている。 In addition, after the development with the developer, a so-called rinse process is performed with ultrapure water in order to remove the developer remaining on the substrate. After the rinse process, a rinse waste liquid containing TAA ions is removed. Discharged. These development waste liquid and rinse waste liquid are usually mixed and then discharged as development waste liquid containing TAA ions. In recent years, as the production amount of semiconductors and liquid crystals increases, the consumption of the developer increases, and the discharge amount of the developer waste solution containing these TAA ions also increases. Recently, there has been proposed a method for recovering TAA ions containing TAA ions, which is recovered from TAAH containing TAA ions, purified and reused.
半導体、及び液晶製造工程から排出されるTAAイオンを含有する現像廃液には、TAAイオンの他に、該現像廃液に溶解したノボラック樹脂、ポリスチレン樹脂等のフォトレジスト成分、および微量の有機溶媒、界面活性剤等の有機物(以下、単に有機物と総称する。)や、基板表面の金属層や前記製造工程における配管材料から溶出する微量の金属成分も含有している。 The developer waste solution containing TAA ions discharged from the semiconductor and liquid crystal manufacturing process includes, in addition to TAA ions, a photoresist component such as novolak resin and polystyrene resin dissolved in the developer waste solution, and a trace amount of organic solvent, interface. It also contains organic substances such as activators (hereinafter simply referred to as organic substances), trace amounts of metal components eluted from the metal layer on the substrate surface and piping materials in the manufacturing process.
そこで、TAAイオンを含有現像廃液の回収方法としては、TAAイオンを含有する現像廃液をカチオン交換材料に接触させて、TAAイオンをカチオン交換材料に吸着させることで、該現像廃液中のTAAイオンを回収し、次いで酸をカチオン交換材料と接触させて、TAA塩を溶離させた後、TAA塩を電気化学セルに供給して、水酸化TAAを回収方法等が提案されている(特許文献1参照)。 Therefore, as a method for recovering the developer waste solution containing TAA ions, the developer waste solution containing TAA ions is brought into contact with the cation exchange material, and the TAA ions are adsorbed to the cation exchange material, so that the TAA ions in the developer waste solution are absorbed. A method of recovering TAA hydroxide by bringing the TAA salt into an electrochemical cell after bringing the acid into contact with the cation exchange material and then eluting the TAA salt is proposed (see Patent Document 1). ).
上記特許文献1に記載の方法では、TAAイオンのカチオン交換材料への吸着及び溶離を経ることにより、得られる溶離液中のTAAイオン濃度が増加する。このため、上記処理は、TAAイオンの濃縮も兼ねて行われるため、電気化学セルによる水酸化TAAの回収における電流効率も高く優れた回収方法である。 In the method described in Patent Document 1, the concentration of TAA ions in the obtained eluent is increased by the adsorption and elution of TAA ions to the cation exchange material. For this reason, since the said process is performed also as concentration of TAA ion, it is the collection method with the high current efficiency in collection | recovery of TAA hydroxide by an electrochemical cell, and was excellent.
しかしながら、カチオン交換材料に供給されるTAAイオンを含有する現像廃液は、通常TAAイオン濃度が0.5%以下程度と非常に低いため、カチオン交換材料により、TAAイオンを回収した後の処理廃液の量が多くなる傾向にある。 However, since the development waste liquid containing TAA ions supplied to the cation exchange material usually has a very low TAA ion concentration of about 0.5% or less, the treatment waste liquid after the collection of TAA ions by the cation exchange material is used. The amount tends to increase.
かかる処理廃液は、上記現像廃液中の有機物及び金属成分を含有しているため、有効な再利用手段がないと考えられており、これまで、適切な処理を経て排出されてきた。 Since such processing waste liquid contains organic substances and metal components in the development waste liquid, it is considered that there is no effective recycling means and has been discharged through appropriate processing.
しかしながら、TAAイオンを含有する現像廃液の排出量の増加に伴い、上記処理廃液の排出量も増加しており、排水処理に係るコストの削減という点から、該処理廃液の再利用方法の確立が望まれてきた。 However, with the increase in the discharge amount of developing waste liquid containing TAA ions, the discharge amount of the treatment waste liquid has also increased. From the viewpoint of reducing the costs associated with wastewater treatment, it is possible to establish a method for reusing the treatment waste liquid. It has been desired.
本発明は、上記の状況に鑑みてなされたものである。すなわち、本発明の目的は、TAAイオンを含有する現像廃液を、陽イオン交換樹脂に接触させてTAAイオンを吸着させることにより、TAAイオンを回収した後の処理廃液を再利用する方法を提供することにある。 The present invention has been made in view of the above situation. That is, an object of the present invention is to provide a method for reusing a processing waste liquid after recovering TAA ions by bringing a developing waste liquid containing TAA ions into contact with a cation exchange resin to adsorb the TAA ions. There is.
本発明者らは、前記課題に鑑み、鋭意検討を行った。まず本発明者らは、前記処理廃液中の不純物の含有量を分析した結果、予想に反して高純度の水であることが判明した。そこで、上記処理廃液の工水としての使用を検討した結果、例えば超純水製造工程における一次原水として、あるいは、TAAイオンを含有する液を電解槽に供給して、水酸化TAAを回収する際の電解槽の冷却水等の工水として使用できることを見出し、本願発明を完成させるに至った。 In view of the above problems, the present inventors have conducted intensive studies. First, as a result of analyzing the content of impurities in the treatment waste liquid, the present inventors have found that it is highly pure water contrary to expectations. Therefore, as a result of studying the use of the above treatment waste liquid as industrial water, for example, when recovering TAA hydroxide as primary raw water in an ultrapure water production process or by supplying a liquid containing TAA ions to an electrolytic cell The present invention has been found out that it can be used as industrial water such as cooling water for electrolytic baths.
すなわち、本発明は、TAAイオンを含有する現像廃液を、陽イオン交換樹脂に接触させて該TAAイオンを吸着させることにより、TAAイオンを回収した後の処理廃液を工水として再利用することを特徴とする処理廃液の再利用方法である。 That is, the present invention is to reuse the processing waste liquid after recovering TAA ions as industrial water by contacting the development waste liquid containing TAA ions with a cation exchange resin to adsorb the TAA ions. This is a method for reusing a processing waste liquid.
従来、TAAイオンを含有する現像廃液を、陽イオン交換樹脂に接触させて、TAAイオンを回収した後の処理廃液は、未使用のまま、適切な処理を経て排出されてきた。本発明により、上記処理廃液を工水として再利用することが可能となり、廃棄処分にかかるコストの大幅削減並びに製造コスト削減に寄与しうる。 Conventionally, the processing waste liquid after the TAA ions are brought into contact with the cation exchange resin and the TAA ions are recovered has been discharged through an appropriate process without being used. By this invention, it becomes possible to reuse the said processing waste liquid as industrial water, and can contribute to the drastic reduction of the cost concerning disposal, and the manufacturing cost reduction.
本発明は、TAAイオンを含有する現像廃液を、陽イオン交換樹脂に接触させて該TAAイオンを吸着させることにより、TAAイオンを回収した後の処理廃液を工水として再利用することが特徴である。 The present invention is characterized by reusing the processing waste liquid after recovering TAA ions as industrial water by contacting the development waste liquid containing TAA ions with a cation exchange resin to adsorb the TAA ions. is there.
TAAイオンを含有する現像廃液より、水酸化TAAの回収、精製を行う、代表的な処理方法について、図1のフロー図を基に説明する。TAAイオンを含有する現像液は、超純水により、適切な濃度に調節されて、現像工程における現像液として使用される。現像工程、及びリンス工程を経て排出された、TAAイオンを含有する現像廃液は、陽イオン交換樹脂に接触させて該TAAイオンを吸着させることにより、TAAイオンが回収され、処理廃水が排出される。なお、陽イオン交換樹脂に吸着された、TAAイオンは、酸により、該樹脂より溶離され、TAAイオンを含有する溶液として、回収される。回収された溶液は、必要に応じて、濃縮、金属不純物等の除去を行う精製工程を経て、電解工程(又は陰イオン交換樹脂処理(図示せず)にて、水酸化TAAとして回収される。また、TAAイオンの吸着に用いられた陽イオン交換樹脂は、適切な濃度に調節された酸により再生されて、TAAイオンを含有する現像廃液中のTAAイオンの吸着に再利用される
<TAAイオンを含有する現像廃液>
本発明の精製方法において用いる、TAAイオンを含有する現像廃液について詳細に説明する。
A typical processing method for recovering and purifying hydroxylated TAA from a developing waste solution containing TAA ions will be described with reference to the flowchart of FIG. The developer containing TAA ions is adjusted to an appropriate concentration with ultrapure water and used as a developer in the development process. The development waste solution containing TAA ions discharged through the development step and the rinsing step is brought into contact with a cation exchange resin to adsorb the TAA ions, whereby the TAA ions are recovered and the processing waste water is discharged. . The TAA ions adsorbed on the cation exchange resin are eluted from the resin with an acid and recovered as a solution containing TAA ions. The recovered solution is recovered as hydroxylated TAA in an electrolysis step (or anion exchange resin treatment (not shown)) through a purification step for concentration and removal of metal impurities, if necessary. In addition, the cation exchange resin used for the adsorption of TAA ions is regenerated with an acid adjusted to an appropriate concentration and reused for the adsorption of TAA ions in a developing waste solution containing TAA ions. <TAA ions Development waste liquid containing
The developing waste solution containing TAA ions used in the purification method of the present invention will be described in detail.
本発明において、TAAイオンを含有する現像廃液とは、半導体、及び液晶製造工程における、現像工程、及びリンス工程より排出される廃液を示す。上記廃液は、通常、現像工程及びリンス工程より排出される廃液は混合されて、該廃液中に含有されるTAAイオンを水酸化TAAとして回収される。 In the present invention, the development waste liquid containing TAA ions refers to the waste liquid discharged from the development process and the rinsing process in the semiconductor and liquid crystal manufacturing process. The waste liquid is usually mixed with the waste liquid discharged from the development process and the rinsing process, and TAA ions contained in the waste liquid are recovered as hydroxylated TAA.
本発明において、TAAHの具体例としては、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、水酸化テトラプロピルアンモニウム、水酸化テトラブチルアンモニウム等を挙げることができる。上記TAAHの中でも、半導体製造工程における現像液として広く用いられている点で水酸化テトラメチルアンモニウムが好適に使用できる。 In the present invention, specific examples of TAAH include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide. Among the above TAAH, tetramethylammonium hydroxide can be suitably used because it is widely used as a developer in the semiconductor manufacturing process.
本発明において用いるTAAイオンを含有する現像廃液中のTAAイオンの濃度については、特に制限なく、種々のTAAイオンの濃度の現像廃液を使用することが可能である。前記現像工程にて排出される上記現像廃液中のTAAイオンの濃度は、通常1.0〜5.0%程度であるが、リンス工程により、多量のリンス廃液が発生し、現像廃液と混合されるため、半導体、及び液晶製造工程より排出されるTAAイオンを含有する現像廃液中のTAAH濃度は通常1%以下程度である
上記TAAH含有現像廃液には、半導体・液晶製造工程における、金属層や配管材料から溶出する微量の金属成分が含まれている。上記金属成分の濃度については、例えば、半導体製造工程にて排出されるTAAH含有現像廃液では0.1〜50ppb、液晶製造工程にて排出されるTAAH含有現像廃液では1〜100ppb程度である。
The concentration of TAA ions in the development waste solution containing TAA ions used in the present invention is not particularly limited, and development waste solutions having various TAA ion concentrations can be used. The concentration of TAA ions in the developer waste discharged in the development step is usually about 1.0 to 5.0%, but a large amount of rinse waste is generated in the rinse step and mixed with the developer waste. Therefore, the TAAH concentration in the developing waste liquid containing TAA ions discharged from the semiconductor and the liquid crystal manufacturing process is usually about 1% or less. The TAAH-containing developing waste liquid includes a metal layer or a metal layer in the semiconductor / liquid crystal manufacturing process. A trace amount of metal components eluted from the piping material are contained. The concentration of the metal component is, for example, about 0.1 to 50 ppb for the TAAH-containing developer waste discharged in the semiconductor manufacturing process, and about 1 to 100 ppb for the TAAH-containing developer waste discharged in the liquid crystal manufacturing process.
また、前記のとおり、上記TAAH含有現像廃液には、TAAHと溶解したノボラック樹脂、ポリスチレン樹脂等のフォトレジスト由来の有機物、および微量の有機溶媒、界面活性剤等の有機物(以下、単に有機物と総称する)が溶解している。上記TAAH濃度が1質量%以下のTAAH含有現像廃液中に溶解している有機物の濃度は通常COD換算で数〜数百ppm程度である。 In addition, as described above, the TAAH-containing developer waste solution includes organic substances derived from photoresist such as novolak resin and polystyrene resin dissolved in TAAH, and organic substances such as trace amounts of organic solvents and surfactants (hereinafter simply referred to as organic substances generically). Is dissolved). The concentration of the organic matter dissolved in the TAAH-containing developer waste having a TAAH concentration of 1% by mass or less is usually about several to several hundred ppm in terms of COD.
<TAAイオンを含有する現像廃液と陽イオン交換樹脂との接触>
本発明においては、TAAイオンを含む現像廃液を陽イオン交換樹脂に接触させる。TAAイオンを含む現像廃液を陽イオン交換樹脂に接触させると、陽イオン交換樹脂の対イオンとTAAイオンが交換され、陽イオン交換樹脂にTAAイオンが吸着される。この結果、TAAイオンを含む現像廃液からTAAイオンを回収することができる。
<Contact between developer waste solution containing TAA ions and cation exchange resin>
In the present invention, a developing waste solution containing TAA ions is brought into contact with a cation exchange resin. When the developer waste solution containing TAA ions is brought into contact with the cation exchange resin, the counter ions of the cation exchange resin and the TAA ions are exchanged, and the TAA ions are adsorbed on the cation exchange resin. As a result, TAA ions can be recovered from the developing waste liquid containing TAA ions.
本発明において、使用する陽イオン交換樹脂としては、例えば、スチレン−ジビニルベンゼン共重合物、アクリル酸−ジビニルベンゼン共重合物、メタアクリル酸−ジビニルベンゼン共重合物等の基体にスルホン酸基等の強酸基を導入した強酸性陽イオン交換樹脂、及び上記の基体にカルボキシル基、フェノール性ヒドロキシル基等の弱酸基を導入した弱酸性陽イオン交換樹脂が挙げられる。上記樹脂の構造として、ゲル形、ポーラス形、ハイポーラス形、マクロレチキュラー(MR)形があるが、本発明においては、そのいずれの構造も好適に使用することができる。特に、膨潤収縮強度に優れるMR形が好適である。 In the present invention, the cation exchange resin used is, for example, a styrene-divinylbenzene copolymer, an acrylic acid-divinylbenzene copolymer, a methacrylic acid-divinylbenzene copolymer or the like having a sulfonic acid group or the like. Examples include strongly acidic cation exchange resins having strong acid groups introduced therein, and weakly acidic cation exchange resins having weak acid groups such as carboxyl groups and phenolic hydroxyl groups introduced into the substrate. As the structure of the resin, there are a gel type, a porous type, a high porous type, and a macroreticular (MR) type. In the present invention, any of these structures can be preferably used. In particular, the MR type excellent in swelling shrinkage strength is suitable.
上記陽イオン交換樹脂は、通常、対イオンが、水素イオン(H型)かナトリウムイオン(Na型)で市販されているが、Na型の陽イオン交換樹脂を用いた場合には、TAAイオンとのイオン交換により、Naイオンが排出され、TAAイオンを回収後の処理廃液中のNaイオンが増加する傾向がある。従って、陽イオン交換樹脂としては、H型を用いることが好ましい。なお、Na型で市販されている陽イオン交換樹脂を使用する場合には、使用に際して予め陽イオン交換樹脂に塩酸や硫酸
等の酸を通液し、対イオンを水素イオンとして用いればよい。
The cation exchange resin is usually marketed with hydrogen ions (H type) or sodium ions (Na type) as counter ions, but when Na type cation exchange resin is used, TAA ions and By the ion exchange, Na ions are discharged, and there is a tendency that Na ions in the treatment waste liquid after recovering TAA ions increase. Therefore, it is preferable to use H type as the cation exchange resin. In addition, when using the cation exchange resin marketed by Na type, what is necessary is just to let acids, such as hydrochloric acid and a sulfuric acid, flow beforehand through a cation exchange resin, and use a counter ion as a hydrogen ion.
また、上記H型の陽イオン交換樹脂、及びNa型を酸によりH型とした陽イオン交換樹脂は、TAAイオンを含有する現像廃液を接触させる前に、超純水で十分洗浄しておくことが好ましい。 In addition, the H-type cation exchange resin and the cation-exchange resin in which the Na type is converted to the H type by acid should be sufficiently washed with ultrapure water before contacting the developer waste solution containing TAA ions. Is preferred.
上記処理廃液中へのNaイオンの混入を防止するという観点から、超純水で洗浄する際に、上記陽イオン交換樹脂から排出される水中のナトリウム溶出量が100ppb以下であることが好ましい。水中のナトリウム溶出量が、100ppb以上である場合には、上記酸を通液によるH型への置換、及び超純水による洗浄を、水中のナトリウム溶出量が、100ppb以下となるまで行えば良い。 From the viewpoint of preventing Na ions from being mixed into the treatment waste liquid, it is preferable that the amount of sodium elution in the water discharged from the cation exchange resin is 100 ppb or less when washing with ultrapure water. When the amount of sodium elution in water is 100 ppb or more, the above acid replacement with H-type by passing the solution and washing with ultrapure water may be performed until the amount of sodium elution in water becomes 100 ppb or less. .
また、TAAイオンを含有する廃液と陽イオン交換樹脂とを接触させる方法については、公知の方法を適宜採用することができる。具体的には、例えば、カラムに陽イオン交換樹脂を充填して該廃液を連続的に通過させるカラム方式、廃液中に陽イオン交換樹脂を添加して撹拌下に接触させ、その後にろ過して固液分離するバッチ方式等を採用することができる。中でも、操作性を考慮すると、カラム方式を採用することが好ましい。このカラム方式を採用する場合、陽イオン交換樹脂の性能等に応じて適宜決定すればよいが、効率よくTAAイオンを吸着するためには、TAAHの含有量が0.001〜1質量%の廃液であれば、カラムの高さ(L)と直径(D)との比(L/D)が0.5〜20、該廃液の空間速度(SV)を5(1/時間)以上50(1/時間)以下とすることが好ましい。 Moreover, a well-known method can be suitably employ | adopted about the method of making the waste liquid containing TAA ion and cation exchange resin contact. Specifically, for example, a column system in which a column is filled with a cation exchange resin and the waste liquid is continuously passed through, a cation exchange resin is added to the waste liquid and brought into contact with stirring, and then filtered. A batch system for solid-liquid separation can be employed. Among these, in consideration of operability, it is preferable to adopt the column method. When this column method is adopted, it may be determined as appropriate according to the performance of the cation exchange resin, etc., but in order to adsorb TAA ions efficiently, a waste liquid having a TAAH content of 0.001 to 1% by mass. If so, the ratio (L / D) of the column height (L) to the diameter (D) is 0.5 to 20, and the space velocity (SV) of the waste liquid is 5 (1 / hour) or more 50 (1 / Hour) or less.
陽イオン交換樹脂に接触させる、TAAイオンを含有する廃液の量は、陽イオン交換樹脂の交換容量になるまで行うことが、処理廃液中へのTAAイオンの混入を防止する点で好ましい。処理廃液中のTAAイオンの濃度は、陽イオン交換樹脂より排出される処理廃液をイオンクロマトグラフィーにより分析することが可能である。 The amount of the waste liquid containing TAA ions to be brought into contact with the cation exchange resin is preferably performed until the exchange capacity of the cation exchange resin is reached, in order to prevent the mixing of the TAA ions into the treatment waste liquid. Regarding the concentration of TAA ions in the treatment waste liquid, the treatment waste liquid discharged from the cation exchange resin can be analyzed by ion chromatography.
<TAAイオンの回収>
陽イオン交換樹脂に吸着されたTAAイオンは、該樹脂に酸を接触させることにより、溶離させることができる。かかる陽イオン交換樹脂に接触せしめる酸としては、水溶液の状態で水素イオンが生成するものであれば特に限定されず、例えば、塩酸、硫酸等の鉱酸水溶液が例示される。上記の酸のうち、工業的に安価で入手可能な点、及び濃度調整が容易な点から、塩酸水溶液が最も好適である。上記塩酸の濃度及び使用量については、吸着されたTAAイオンを溶離するのに十分な濃度及び量であれば特に限定されないが、通常は上記陽イオン交換樹脂に、1〜10質量%の塩酸水溶液を1〜10(L/L−樹脂)接触せしめれば十分である。
<Recovery of TAA ions>
TAA ions adsorbed on the cation exchange resin can be eluted by contacting the resin with an acid. The acid brought into contact with the cation exchange resin is not particularly limited as long as hydrogen ions are generated in an aqueous solution state, and examples thereof include aqueous mineral acid solutions such as hydrochloric acid and sulfuric acid. Of the above acids, an aqueous hydrochloric acid solution is most preferred because it is industrially inexpensive and can be obtained, and the concentration can be easily adjusted. The concentration and use amount of the hydrochloric acid are not particularly limited as long as the concentration and amount are sufficient to elute the adsorbed TAA ions. Usually, the cation exchange resin is 1 to 10% by mass hydrochloric acid aqueous solution. It is sufficient to contact 1 to 10 (L / L-resin).
<処理廃液の再利用>
TAAイオンを含有する現像廃液を、陽イオン交換樹脂に接触させて該TAAイオンを吸着させることにより、TAAイオンを回収した後の処理廃液は、pH4.0〜9.0程度、金属イオンが合計で1〜200ppb程度、有機物がCOD換算で1〜200ppm程度含有された比較的高純度の水である。本発明では、かかる処理廃液を、工水として再使用することが特徴である。なお、本発明において処理廃液は、そのまま、後述する水として再利用する事が可能であるが、使用する目的に応じて、適切な後処理(例えば、酸又はアルカリの添加による処理廃液のpHの調整等)を行った後に用いることも可能である。
<Reuse of processing waste liquid>
The waste treatment solution containing TAA ions is brought into contact with a cation exchange resin to adsorb the TAA ions, so that the treatment waste solution after recovering TAA ions has a pH of about 4.0 to 9.0 and the total amount of metal ions. It is relatively high-purity water containing about 1 to 200 ppb of organic matter in an amount of about 1 to 200 ppm in terms of COD. The present invention is characterized by reusing such treatment waste liquid as industrial water. In the present invention, the treatment waste liquid can be reused as it is as described later, but depending on the purpose of use, an appropriate post-treatment (for example, the pH of the treatment waste liquid by addition of acid or alkali) It is also possible to use it after adjusting).
本発明における処理廃液は、前記図1における、現像液濃度調製用希釈水(再利用i)、リンス工程におけるリンス水(再利用ii)、陽イオン交換樹脂の再生に用いる酸の濃度調整用希釈水(再利用iii)、濃縮工程における濃縮器用冷却水(再利用iv)、精製工程における洗浄水(再利用v)、電解槽用冷却水、或いは補給水(再利用vi)、その他ユーティリティにおける工水(再利用viii)として再使用することが可能である。 The processing waste liquid in the present invention is diluted with developer concentration adjusting dilution water (reuse i), rinse water in the rinse step (reuse ii), and acid concentration adjustment dilution used in the regeneration of the cation exchange resin in FIG. Water (reuse iii), concentrator cooling water in the concentration process (reuse iv), cleaning water in the purification process (reuse v), electrolytic bath cooling water, or makeup water (reuse vi), and other utilities It can be reused as water (reuse viii).
また、上記の通り、本発明の処理廃液は、比較的高純度の水であるため、超純水製造用原水(再利用vii)として使用することも可能である。 In addition, as described above, the treatment waste liquid of the present invention is relatively high-purity water, and thus can be used as raw water for producing ultrapure water (reuse vii).
本発明を具体的に説明するため以下実施例を挙げて説明するが、本発明はこれらに限定されるものではない。 In order to describe the present invention specifically, the present invention will be described below with reference to examples. However, the present invention is not limited to these examples.
なお、液晶工場より排出された水酸化テトラメチルアンモニウム(以下、TMAH)含有廃液をそれぞれの実施例に合わせた濃度(実施例1では0.05%、実施例2では0.5%)となるよう調製した廃液を試料液として使用した。試料液の水質を表1に示す。 The concentration of tetramethylammonium hydroxide (hereinafter referred to as TMAH) -containing waste liquid discharged from the liquid crystal factory is adjusted to a concentration (0.05% in Example 1, 0.5% in Example 2). The prepared waste liquid was used as a sample liquid. Table 1 shows the water quality of the sample solution.
また、pHはpH電極法(測定装置:HM−30R(東亜ディーケーケー株式会社製))により、TMAイオン濃度は、イオンクロマトグラフ法(測定装置:DX320(ダイオネクス社))により、金属濃度は高周波誘導結合プラズマ発光分析(ICP−OES)法(測定装置:iCAP 6500 DUO (サーモエレクトロン株式会社製))により、CODは100℃における過マンガン酸カリウムによる酸素消費量(JIS K 0101)により分析した。 The pH is measured by the pH electrode method (measuring device: HM-30R (manufactured by Toa DK Corporation)), the TMA ion concentration is measured by the ion chromatograph method (measuring device: DX320 (Dionex)), and the metal concentration is induced by high frequency. COD was analyzed by oxygen consumption (JIS K 0101) by potassium permanganate at 100 ° C. by a coupled plasma emission analysis (ICP-OES) method (measuring device: iCAP 6500 DUO (manufactured by Thermo Electron Co., Ltd.)).
実施例1
弱酸性陽イオン交換樹脂DIAION WK40L(三菱化学社製)100mlを直径2.2cmのガラスカラムに充填し、1規定の塩酸を樹脂量に対する空間速度6L/L−樹脂・hr(600ml/hr:SV=6)で800ml通液して樹脂をH型に再生した。次いで、樹脂中に残留する塩酸を超純水で洗浄した。
Example 1
100 ml of weakly acidic cation exchange resin DIAION WK40L (manufactured by Mitsubishi Chemical Corporation) is packed in a glass column having a diameter of 2.2 cm, and 1N hydrochloric acid is used with a space velocity of 6 L / L-resin · hr (600 ml / hr: SV). = 6), 800 ml of liquid was passed through to regenerate the resin into H type. Next, hydrochloric acid remaining in the resin was washed with ultrapure water.
上記カラムに、試料液(TMAH濃度0.05%)を樹脂量に対する空間速度40L/L−樹脂・hr(4,000ml/hr:SV=40)で40,000ml通液し、TMAイオンの樹脂吸着を行った。TMAイオン吸着後の処理廃液を回収し水質の分析を行った結果、TMAイオンは検出されなかった。処理廃液の水質を表1に示す。 40,000 ml of sample solution (TMAH concentration 0.05%) was passed through the column at a space velocity of 40 L / L-resin · hr (4,000 ml / hr: SV = 40) with respect to the amount of resin. Adsorption was performed. As a result of recovering the treatment liquid after adsorption of TMA ions and analyzing the water quality, no TMA ions were detected. Table 1 shows the water quality of the treatment waste liquid.
実施例2
弱酸性陽イオン交換樹脂DIAION WK40L(三菱化学社製)100mlを直径2.2cmのガラスカラムに充填し、1規定の塩酸を樹脂量に対する空間速度6L/L−樹脂・hr(600ml/hr:SV=6)で800ml通液して樹脂をH型に再生した。次いで、樹脂中に残留する塩酸を超純水で洗浄した。
Example 2
100 ml of weakly acidic cation exchange resin DIAION WK40L (manufactured by Mitsubishi Chemical Corporation) is packed in a glass column having a diameter of 2.2 cm, and 1N hydrochloric acid is used with a space velocity of 6 L / L-resin · hr (600 ml / hr: SV). = 6), 800 ml of liquid was passed through to regenerate the resin into H type. Next, hydrochloric acid remaining in the resin was washed with ultrapure water.
上記カラムに、試料液(TMAH濃度0.5%)を樹脂量に対する空間速度40L/L−樹脂・hr(4,000ml/hr:SV=40)で4,000ml通液し、TMAイオンの樹脂吸着を行った。TMAイオン吸着後の処理廃液を回収し水質の分析を行った結果、TMAイオンは検出されなかった。処理廃液の水質を表1に示す。 4,000 ml of sample solution (TMAH concentration 0.5%) was passed through the column at a space velocity of 40 L / L-resin · hr (4,000 ml / hr: SV = 40) with respect to the amount of resin. Adsorption was performed. As a result of recovering the treatment liquid after adsorption of TMA ions and analyzing the water quality, no TMA ions were detected. Table 1 shows the water quality of the treatment waste liquid.
上記実施例1及び2でも明らかなように、TAAイオンを含有する現像廃液を、陽イオン交換樹脂に接触させて該TAAイオンを吸着させることにより、TAAイオンを回収した後の処理廃液は、高純度の水である。従って、この処理廃液を、前記の水として再利用することが可能である。 As is clear from Examples 1 and 2 above, the processing waste liquid after recovering TAA ions by contacting the development waste liquid containing TAA ions with a cation exchange resin to adsorb the TAA ions is high. Purity water. Therefore, this processing waste liquid can be reused as the water.
Claims (6)
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KR1020127015301A KR20120103633A (en) | 2009-12-15 | 2010-12-10 | Method for reusing waste liquid from which tetraalkylammonium ions have been removed |
CN2010800552990A CN102686520A (en) | 2009-12-15 | 2010-12-10 | Method for reusing waste liquid from which tetraalkylammonium ions have been removed |
PCT/JP2010/072239 WO2011074495A1 (en) | 2009-12-15 | 2010-12-10 | Method for reusing waste liquid from which tetraalkylammonium ions have been removed |
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CN103524461A (en) * | 2012-07-05 | 2014-01-22 | 荒川化学工业株式会社 | A method for manufacturing an epoxy compound and an epoxy compound |
JP2015134344A (en) * | 2013-12-30 | 2015-07-27 | サッチェム,インコーポレイテッド | Process for improved recovery of onium hydroxide from composition containing process residue |
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JPH06142649A (en) * | 1992-11-10 | 1994-05-24 | Tama Kagaku Kogyo Kk | Treatment of organic quaternary ammonium hydroxide-containing waste liquid |
JPH06304557A (en) * | 1993-04-22 | 1994-11-01 | Nomura Micro Sci Kk | Waste liquid treating method |
JPH1099853A (en) * | 1996-09-27 | 1998-04-21 | Kurita Water Ind Ltd | Apparatus for treating water containing tetraalkylammonium hydroxide |
JP2005329315A (en) * | 2004-05-19 | 2005-12-02 | Japan Organo Co Ltd | Method and apparatus for recovering water from drainage containing tetraalkyl ammonium ion |
JP2007181833A (en) * | 2007-04-05 | 2007-07-19 | Japan Organo Co Ltd | Method for treating tetraalkylammonium ion-containing solution |
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2010
- 2010-12-10 KR KR1020127015301A patent/KR20120103633A/en not_active Application Discontinuation
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- 2010-12-10 WO PCT/JP2010/072239 patent/WO2011074495A1/en active Application Filing
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JPH06142649A (en) * | 1992-11-10 | 1994-05-24 | Tama Kagaku Kogyo Kk | Treatment of organic quaternary ammonium hydroxide-containing waste liquid |
JPH06304557A (en) * | 1993-04-22 | 1994-11-01 | Nomura Micro Sci Kk | Waste liquid treating method |
JPH1099853A (en) * | 1996-09-27 | 1998-04-21 | Kurita Water Ind Ltd | Apparatus for treating water containing tetraalkylammonium hydroxide |
JP2005329315A (en) * | 2004-05-19 | 2005-12-02 | Japan Organo Co Ltd | Method and apparatus for recovering water from drainage containing tetraalkyl ammonium ion |
JP2007181833A (en) * | 2007-04-05 | 2007-07-19 | Japan Organo Co Ltd | Method for treating tetraalkylammonium ion-containing solution |
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CN103524461A (en) * | 2012-07-05 | 2014-01-22 | 荒川化学工业株式会社 | A method for manufacturing an epoxy compound and an epoxy compound |
JP2015134344A (en) * | 2013-12-30 | 2015-07-27 | サッチェム,インコーポレイテッド | Process for improved recovery of onium hydroxide from composition containing process residue |
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