JP2011119436A - Bonding method of substrate mounting device - Google Patents

Bonding method of substrate mounting device Download PDF

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JP2011119436A
JP2011119436A JP2009275281A JP2009275281A JP2011119436A JP 2011119436 A JP2011119436 A JP 2011119436A JP 2009275281 A JP2009275281 A JP 2009275281A JP 2009275281 A JP2009275281 A JP 2009275281A JP 2011119436 A JP2011119436 A JP 2011119436A
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substrate
preform
ausn
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ausn sheet
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Shintaro Hakamada
新太郎 袴田
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Toyoda Gosei Co Ltd
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Priority to JP2009275281A priority Critical patent/JP2011119436A/en
Priority to US12/926,637 priority patent/US8482015B2/en
Priority to CN2010105856689A priority patent/CN102104036A/en
Publication of JP2011119436A publication Critical patent/JP2011119436A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To make an AuSn sheet type preform immobile even when a nonoxidative gas is blown, and to reduce voids left under the AuSn sheet type preform. <P>SOLUTION: A bonding method includes the steps of: placing the AuSn sheet type preform 4 on the surface of a sub-mount substrate 2 in which a suction hole 3 is formed while blowing the nonoxidative gas 16 to the surface side of the sub-mount substrate 2, vacuum-sucking the AuSn sheet type preform 4 through the suction hole 3 so that the AuSn sheet type preform is sucked to the surface of the sub-mount substrate 2, and placing an LED chip 1 on the AuSn sheet type preform 4; and bonding the sub-mount substrate 2 and LED chip 1 together by heating and fusing the AuSn sheet type preform 4 from the sub-mount substrate 2 and LED chip 1. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、基板実装装置(例えばLEDパッケージ)の構成部品である被接合基板と接合体とを接合する方法に関するものである。   The present invention relates to a method for bonding a substrate to be bonded, which is a component of a substrate mounting apparatus (for example, an LED package), and a bonded body.

基板実装装置の被接合基板と接合体とを接合するときに、AuSn(金−すず合金)を使用する場合がある。   AuSn (gold-tin alloy) may be used when the substrate to be bonded and the bonded body of the substrate mounting apparatus are bonded.

特許文献1には、素子の接合面を上向きにしてAuSnはんだペーストを塗布し、非酸化性雰囲気中でリフロー処理して該はんだペーストを溶融した後、冷却して凝固AuSnはんだ層を形成し、素子を反転させて基板の上に載置し、非酸化性雰囲気中でリフロー処理することによりAuSnはんだ接合部を介して素子を基板に接合する方法が記載されている。   In Patent Document 1, an AuSn solder paste is applied with the element bonding surface facing upward, and the solder paste is melted by reflow treatment in a non-oxidizing atmosphere, and then cooled to form a solidified AuSn solder layer. A method is described in which an element is inverted and placed on a substrate and reflowed in a non-oxidizing atmosphere to bond the element to the substrate via an AuSn solder joint.

特許文献2には、基板に半田配置用穴底部より貫通孔を設け、貫通孔内を真空吸引してAuSnボールバンプを半田配置用穴に配置した後、レーザダイオード素子を降下させてAuSnボールバンプに当接させ、レーザダイオード素子と基板を加熱してAuSnボールバンプを溶解させ、冷却することにより、接合する方法が記載されている。   In Patent Document 2, a through hole is provided in the substrate from the bottom of the solder placement hole, the inside of the through hole is vacuum-sucked to place the AuSn ball bump in the solder placement hole, and then the laser diode element is lowered to drop the AuSn ball bump. A method is described in which the laser diode element and the substrate are heated to melt the AuSn ball bump and cooled, and then cooled.

その他、基板の上にAuSnシート状プリフォームを置き、AuSnシート状プリフォームの上にLEDチップを置いた後、AuSnシート状プリフォームを加熱して溶融させる接合方法も知られている。本発明者は、このAuSnシート状プリフォームによる接合方法について検討してきたが、次のような問題があった。   In addition, a bonding method is also known in which an AuSn sheet-like preform is placed on a substrate, an LED chip is placed on the AuSn sheet-like preform, and then the AuSn sheet-like preform is heated and melted. The present inventor has studied a bonding method using this AuSn sheet-like preform, but has the following problems.

AuSnは酸化しやすく、酸化すると酸化Snで拡散しなくなり接合不良につながるため、窒素ガスなどの非酸化性ガスをAuSnシート状プリフォーム及びその周囲に吹き付けながら、非酸化雰囲気で接合作業が行われる。しかし、接合しようとするLEDチップは0.3〜1mm角程度の非常に小さいものであり、従ってAuSnシート状プリフォームも非常に小さくかつ薄く軽いため、非酸化性ガスを吹き付けるとAuSnシート状プリフォームは剥がれて飛ぶように動き、位置精度が低しやすいという問題があった。また、接合時に巻き込んだ周囲気体や、不純物の気化によるガスが、AuSnシート状プリフォームの下(被接合基板との間)にボイドとして残り、接合面積が低下して、接合強度不足や放熱不足が起こるという問題もあった。図5(c)は、LEDチップ51をAuSnシート状プリフォーム54によりサブマウント基板52に接合した例であり、AuSnシート状プリフォーム54が位置ずれしてLEDチップ51から一部はみ出るとともに、AuSnシート状プリフォーム54の下にボイド55が残った様子を示している。   AuSn is easy to oxidize, and if oxidized, it will not diffuse with Sn oxide and lead to poor bonding. Therefore, bonding work is performed in a non-oxidizing atmosphere while blowing non-oxidizing gas such as nitrogen gas around the AuSn sheet-like preform and its surroundings. . However, the LED chips to be joined are very small, about 0.3 to 1 mm square, and therefore the AuSn sheet-like preform is also very small, thin and light, so when non-oxidizing gas is sprayed, the AuSn sheet-like preform is The reform was peeled off and moved like a fly, and there was a problem that the positional accuracy was likely to be low. In addition, ambient gas entrained during bonding and gas generated by vaporization of impurities remain as voids under the AuSn sheet-like preform (between the bonded substrates), reducing the bonding area, resulting in insufficient bonding strength and heat dissipation. There was also a problem that happened. FIG. 5C is an example in which the LED chip 51 is bonded to the submount substrate 52 by the AuSn sheet-shaped preform 54. The AuSn sheet-shaped preform 54 is displaced and partially protrudes from the LED chip 51. A state in which the void 55 remains under the sheet-like preform 54 is shown.

特開2008−10545号公報JP 2008-10545 A 特開2002−156561号公報JP 2002-156561 A

そこで、本発明は、非酸化性ガスを吹き付けてもAuSnシート状プリフォームが動かないようにして位置精度の低下を防止し、また、AuSnシート状プリフォームの下に残るボイドを減少させて接合強度不足や放熱不足が起こらないようにすることを目的とする。   Therefore, the present invention prevents the position accuracy from being lowered by preventing the AuSn sheet-shaped preform from moving even when non-oxidizing gas is blown, and also reduces the void remaining under the AuSn sheet-shaped preform to reduce the bonding. The purpose is to prevent insufficient strength and heat dissipation.

上記課題を解決するため、本発明は、被接合基板に接合体を実装した基板実装装置の構成部品である被接合基板と接合体とを、それらの間に挟んだAuSnシート状プリフォームにより接合する方法において、
被接合基板の表面側に非酸化性ガスを吹き付けながら、吸引孔を形成した被接合基板の表面に該吸引孔の開口を覆うようにAuSnシート状プリフォームを置き、AuSnシート状プリフォームを吸引孔から真空吸引して被接合基板の表面に吸着し、該AuSnシート状プリフォームに接合体を置くステップと、
被接合基板及び接合体からAuSnシート状プリフォームを加熱して溶融させ、被接合基板と接合体とを接合するステップとを含むことを特徴とする。
In order to solve the above problems, the present invention joins a substrate to be joined and a joined body, which are components of a substrate mounting apparatus in which the joined body is mounted on the substrate to be joined, by an AuSn sheet-like preform sandwiched between them. In the way to
An AuSn sheet-shaped preform is placed on the surface of the substrate to be bonded, which is formed with suction holes, while the non-oxidizing gas is sprayed on the surface side of the substrate to be bonded, and the AuSn sheet-shaped preform is sucked to cover the opening of the suction holes. Vacuum sucking from the holes and adsorbing to the surface of the substrate to be joined, and placing the joined body on the AuSn sheet-like preform;
A step of heating and melting the AuSn sheet-shaped preform from the substrate to be bonded and the bonded body, and bonding the substrate to be bonded and the bonded body.

前記第1のステップでは、AuSnシート状プリフォームに接合体を置いた後、吸引孔からのAuSnシート状プリフォームの吸着を止めるようにすることが好ましい。AuSnシート状プリフォームに接合体を置けば、AuSnシート状プリフォームが動く心配はなくなるからであり、また、次のAuSnシート状プリフォームの溶融時にまで吸着を続けていると、溶融したAuSnをも吸着しかねないからである。
以下に、各要素の例示又は好ましい態様について説明する。
In the first step, it is preferable that after the bonded body is placed on the AuSn sheet-shaped preform, the adsorption of the AuSn sheet-shaped preform from the suction hole is stopped. This is because if the joined body is placed on the AuSn sheet-shaped preform, there is no fear of the AuSn sheet-shaped preform moving, and if the adsorption continues until the next AuSn sheet-shaped preform is melted, the molten AuSn is removed. This is because it may be adsorbed.
Below, the illustration or the preferable aspect of each element is demonstrated.

1.基板実装装置
基板実装装置としては、特定機能の装置に限定されるものではないが、LEDパッケージ、レーザーダイオード、モジュール等を例示できる。
LEDパッケージの場合、(a)接合体がLEDチップであり、被接合基板がサブマウント基板である態様、(b)接合体がサブマウント基板であり、被接合基板がベース基板である態様、(c)前記(a)で接合したサブマウント基板を(b)でベース基板に接合する態様、(d)接合体がLEDチップであり、被接合基板がベース基板である態様、等を例示できる。
1. Substrate mounting device The substrate mounting device is not limited to a device having a specific function, but examples thereof include an LED package, a laser diode, and a module.
In the case of an LED package, (a) an embodiment in which the joined body is an LED chip and the joined substrate is a submount substrate, (b) an embodiment in which the joined body is a submount substrate, and the joined substrate is a base substrate. c) A mode in which the submount substrate bonded in (a) is bonded to the base substrate in (b), (d) a mode in which the bonded body is an LED chip, and a substrate to be bonded is a base substrate, etc.

上記(b)の態様のように、接合体が、LEDチップが接合されたサブマウント基板であるとき、第1のステップにおけるAuSnシート状プリフォームに接合体としてのサブマウント基板を置く作業と、第2ステップとを、LEDチップが触れないで収まる凹部をそなえたチャックによりサブマウント基板を把持して行うことが好ましい。このチャックとしては、特に限定されないが、真空吸着チャックを例示できる。   When the joined body is a submount substrate to which the LED chip is joined as in the above-described aspect (b), an operation of placing the submount substrate as the joined body on the AuSn sheet-like preform in the first step; The second step is preferably performed by gripping the submount substrate with a chuck having a concave portion that the LED chip does not touch. Although it does not specifically limit as this chuck, A vacuum suction chuck can be illustrated.

2.AuSnシート状プリフォーム
AuSnシート状プリフォームの平面寸法形状は、特に限定されないが、接合体の接合面の寸法形状に合わせたものが好ましく、接合体の接合面の縁よりも0.1〜0.6mm控えた辺をもつものがより好ましい。
AuSnシート状プリフォームの厚さは、特に限定されないが、接合力、熱伝導及びコストを勘案すると15〜35μmが好ましく、20〜30μmがより好ましい。
2. AuSn sheet-like preform The planar size and shape of the AuSn sheet-like preform is not particularly limited, but is preferably matched to the size and shape of the joined surface of the joined body, and is 0.1 to 0 than the edge of the joined surface of the joined body. Those having sides of 6 mm are more preferable.
The thickness of the AuSn sheet-like preform is not particularly limited, but is preferably 15 to 35 μm and more preferably 20 to 30 μm in consideration of bonding strength, heat conduction, and cost.

3.非酸化性ガス
非酸化性ガスとしては、特に限定されないが、アルゴン、キセノン、ヘリウムなどの希ガス、水素ガス、窒素ガス等を例示できる。希ガスは、価格は高いが、効果が高い。窒素は、価格が低く、効果も十分なので、好ましい。
非酸化性ガスの吹き付け量は、特に限定されないが、接合体がLEDチップであり、被接合基板がサブマウント基板である場合には、3〜7リットル/分が好ましい。
3. Non-oxidizing gas Although it does not specifically limit as a non-oxidizing gas, Noble gases, such as argon, xenon, and helium, hydrogen gas, nitrogen gas, etc. can be illustrated. Although noble gas is expensive, it is highly effective. Nitrogen is preferred because of its low price and sufficient effect.
The amount of the non-oxidizing gas sprayed is not particularly limited, but is preferably 3 to 7 liters / minute when the bonded body is an LED chip and the bonded substrate is a submount substrate.

4.吸引孔
吸引孔の開口直径は、特に限定されないが、0.15〜0.4mmが好ましい。0.15μmより小さいと吸引力が低い傾向となり、0.4mmより大きいとAuSnシート状プリフォームが吸引孔に進入するように変形する傾向となるからである。
吸引孔の数は、特に限定されず、例えばAuSnシート状プリフォームの中央部を吸引するための1個でもよいし、AuSnシート状プリフォームの分散した複数箇所を吸引するための複数個でもよい。
4). Suction hole Although the opening diameter of a suction hole is not specifically limited, 0.15-0.4 mm is preferable. This is because if it is smaller than 0.15 μm, the suction force tends to be low, and if it is larger than 0.4 mm, the AuSn sheet-like preform tends to be deformed so as to enter the suction hole.
The number of suction holes is not particularly limited. For example, one suction hole may be used for sucking the central portion of the AuSn sheet-like preform, or a plurality of suction holes may be used for sucking a plurality of dispersed locations of the AuSn sheet-like preform. .

本発明によれば、非酸化性ガスを吹き付けてもAuSnシート状プリフォームが動かず、位置精度が向上し、また、AuSnシート状プリフォームと被接合基板との間に残るボイドを減少させ、接合強度不足や放熱不足が起こらないようにすることができる。   According to the present invention, even if non-oxidizing gas is blown, the AuSn sheet-like preform does not move, the positional accuracy is improved, and voids remaining between the AuSn sheet-like preform and the bonded substrate are reduced, It is possible to prevent insufficient bonding strength and insufficient heat dissipation.

実施例でサブマウント基板にLEDチップをAuSnシート状プリフォームにより接合する工程を示す断面図である。It is sectional drawing which shows the process of joining a LED chip to a submount board | substrate with an AuSn sheet-like preform in an Example. 実施例でベース基板にサブマウント基板をAuSnシート状プリフォームにより接合する工程の前半を示す断面図である。It is sectional drawing which shows the first half of the process of joining a submount board | substrate with an AuSn sheet-like preform in a Example. 実施例でベース基板にサブマウント基板をAuSnシート状プリフォームにより接合する工程の後半を示す断面図である。It is sectional drawing which shows the second half of the process of joining a submount board | substrate with an AuSn sheet-like preform in the Example. 実施例のLEDパッケージを示し、(a)は接合順を概念的に示す分解斜視図、(b)は接合後の斜視図である。The LED package of an Example is shown, (a) is a disassembled perspective view which shows the joining order notionally, (b) is the perspective view after joining. (a)は位置ずれもボイドもない実施例を示す平面図、(b)は実施例の変更例を示す平面図、(c)は位置ずれとボイドがある従来例を示す平面図である。(A) is a plan view showing an embodiment with no displacement and no voids, (b) is a plan view showing a modification of the embodiment, and (c) is a plan view showing a conventional example with displacement and voids.

被接合基板(2,5)の表面側に非酸化性ガス(16,26)を吹き付けながら、吸引孔(3,6)を形成した被接合基板(2,5)の表面に該吸引孔(3,6)の開口を覆うようにAuSnシート状プリフォーム(4,7)を置き、AuSnシート状プリフォーム(4,7)を吸引孔から真空吸引して被接合基板(2,5)の表面に吸着し、該AuSnシート状プリフォーム(4,7)に接合体(1,2)を置くステップと、
被接合基板(2,5)及び接合体(1,2)からAuSnシート状プリフォーム(4,7)を加熱して溶融させ、被接合基板(2,5)と接合体(1,2)とを接合するステップとを含む基板実装装置の接合方法である。
While the non-oxidizing gas (16, 26) is sprayed on the surface of the substrate to be bonded (2, 5), the suction hole (3, 6) is formed on the surface of the substrate to be bonded (2, 5). The AuSn sheet-like preform (4, 7) is placed so as to cover the opening of (3, 6), and the AuSn sheet-like preform (4, 7) is vacuum-sucked from the suction hole to form the bonded substrate (2, 5). Adsorbing to the surface and placing the joined body (1, 2) on the AuSn sheet-like preform (4, 7);
The AuSn sheet-like preform (4, 7) is heated and melted from the bonded substrate (2, 5) and the bonded body (1, 2), and the bonded substrate (2, 5) and bonded body (1, 2). And a step of bonding the substrate mounting apparatus.

図1は、被接合基板としての窒化アルミニウムよりなるサブマウント基板2に接合体としてのLEDチップ1を、それらの間に挟んだAuSnシート状プリフォーム4により接合する工程を示している。サブマウント基板2の平面寸法はLEDチップ1の平面寸法より大きく、LEDチップ1はその周りにサブマウント基板2の上面が現れるような基板位置に接合される。図4(a)の丸数字1は、この工程を概念的に示している。予め、サブマウント基板2に、例えば開口直径0.25mmの吸引孔3を形成しておく。また、AuSnシート状プリフォーム4には、例えば、LEDチップ1の接合面(四角形の下面)の四縁よりもそれぞれ0.2mm控えた四辺をもつ、厚さ20μmのAuSn共晶シート状プリフォームを用いる。   FIG. 1 shows a process of bonding an LED chip 1 as a bonded body to a submount substrate 2 made of aluminum nitride as a bonded substrate by an AuSn sheet-like preform 4 sandwiched between them. The planar dimension of the submount substrate 2 is larger than the planar dimension of the LED chip 1, and the LED chip 1 is bonded to a substrate position around which the upper surface of the submount substrate 2 appears. The circled numeral 1 in FIG. 4A conceptually shows this process. For example, a suction hole 3 having an opening diameter of 0.25 mm is formed in the submount substrate 2 in advance. The AuSn sheet-like preform 4 includes, for example, an AuSn eutectic sheet-like preform having a thickness of 20 μm and having four sides with a distance of 0.2 mm from the four edges of the bonding surface (rectangular lower surface) of the LED chip 1. Is used.

図1(a)に示すように、上部開口12のあるチャンバー11の内部において、貫通孔14を備えた吸着台13の上にサブマウント基板2を置く。貫通孔14と吸引孔3とは連通し、吸着台13の裏側に接続した真空吸引装置(図示略)により貫通孔14及び吸引孔3からサブマウント基板2の上方の気体吸引を開始する。ガス供給管15から、サブマウント基板2の表面側に、非酸化性ガスとしての窒素ガス16の吹き付けを開始する。   As shown in FIG. 1A, the submount substrate 2 is placed on the suction table 13 having the through hole 14 in the chamber 11 having the upper opening 12. The through hole 14 and the suction hole 3 communicate with each other, and gas suction above the submount substrate 2 is started from the through hole 14 and the suction hole 3 by a vacuum suction device (not shown) connected to the back side of the suction table 13. Blowing of nitrogen gas 16 as a non-oxidizing gas is started from the gas supply pipe 15 to the surface side of the submount substrate 2.

この気体吸引と窒素ガス16の吹き付けを継続しながら、公知の真空吸着チャック17によりAuSnシート状プリフォーム4を吸着把持して、上部開口12からチャンバー11の内部に挿入し、図1(b)に示すように、サブマウント基板2の表面にその吸引孔3の開口を覆うようにAuSnシート状プリフォーム4を位置決めして置く。AuSnシート状プリフォーム4は吸引孔3からの吸引によりサブマウント基板2の表面に吸着するので、図1(c)に示すように、真空吸着チャック17による吸着を止め、真空吸着チャック17を退避させる。真空吸着チャック17を退避させても、AuSnシート状プリフォーム4はサブマウント基板2の表面に吸着しているので、吹き付けられる窒素ガス16によって剥がれたり横にずれたりすることはなく、図5(a)に示すように位置精度が保たれる。   While continuing this gas suction and nitrogen gas 16 blowing, the AuSn sheet-like preform 4 is sucked and held by a known vacuum suction chuck 17 and inserted into the chamber 11 from the upper opening 12, and FIG. As shown in FIG. 3, the AuSn sheet-like preform 4 is positioned and placed on the surface of the submount substrate 2 so as to cover the opening of the suction hole 3. Since the AuSn sheet-like preform 4 is attracted to the surface of the submount substrate 2 by suction from the suction hole 3, the suction by the vacuum suction chuck 17 is stopped and the vacuum suction chuck 17 is retracted as shown in FIG. Let Even if the vacuum chucking chuck 17 is retracted, the AuSn sheet-like preform 4 is adsorbed on the surface of the submount substrate 2, so that it is not peeled off or shifted laterally by the nitrogen gas 16 blown, as shown in FIG. Position accuracy is maintained as shown in a).

図1(d)に示すように、公知の真空吸着チャック18によりLEDチップ1を吸着して、上部開口12からチャンバー11の内部に挿入し、図1(e)に示すように、AuSnシート状プリフォーム4の上面にLEDチップ1を置き、その後LEDチップ1の吸着を止める。真空吸着チャック18でLEDチップ1を押さえ続けるので、AuSnシート状プリフォーム4が動く心配はないため、吸引孔3からのAuSnシート状プリフォーム4の吸着も止める。   As shown in FIG. 1D, the LED chip 1 is sucked by a known vacuum suction chuck 18 and inserted into the chamber 11 through the upper opening 12, and as shown in FIG. The LED chip 1 is placed on the upper surface of the preform 4 and then the adsorption of the LED chip 1 is stopped. Since the LED chip 1 is kept pressed by the vacuum suction chuck 18, there is no fear that the AuSn sheet-shaped preform 4 moves, so that the suction of the AuSn sheet-shaped preform 4 from the suction hole 3 is also stopped.

引き続き窒素ガス16を吹き付けながら、吸着台13及び真空吸着チャック18をこれらに設けられたヒーター(図示略)により昇温させることにより、サブマウント基板2及びLEDチップ1の両方からAuSnシート状プリフォーム4を加熱して溶融させ、サブマウント基板2とLEDチップ1との接合を開始する。図1(e)の太線矢印は熱の伝導を表している。この接合時に、AuSnシート状プリフォーム4の下(サブマウント基板2との間)に、周囲気体や不純物の気化によるガスが巻き込まれたとしても、それらは吸引孔3から吸引されて除去されるため、図5(a)に示すようにボイドの無い接合が可能となる。このため、接合面積が低下することはなく、従って接合強度不足や放熱不足が起こることもない。   While the nitrogen gas 16 is continuously blown, the temperature of the suction table 13 and the vacuum suction chuck 18 is increased by a heater (not shown) provided thereon, so that an AuSn sheet-like preform is formed from both the submount substrate 2 and the LED chip 1. 4 is heated and melted to start bonding of the submount substrate 2 and the LED chip 1. A thick arrow in FIG. 1 (e) represents heat conduction. At the time of this bonding, even if gas due to vaporization of ambient gas or impurities is caught under the AuSn sheet-like preform 4 (between the submount substrate 2), they are sucked from the suction hole 3 and removed. Therefore, joining without voids is possible as shown in FIG. For this reason, the bonding area does not decrease, and therefore, insufficient bonding strength and insufficient heat dissipation do not occur.

前記加熱を止め、溶融したAuSnシート状プリフォーム4が凝固することにより、サブマウント基板2とLEDチップ1とが接合された後、図1(f)に示すように、窒素ガス16の吹き付けを止めるとともに、真空吸着チャック18を退避させる。   After the heating is stopped and the molten AuSn sheet-like preform 4 is solidified, the submount substrate 2 and the LED chip 1 are joined, and then, as shown in FIG. At the same time, the vacuum suction chuck 18 is retracted.

続いて、図1(g)に示すように、真空吸着チャック19を上部開口12からチャンバー11の内部に挿入し、図1(h)に示すように、真空吸着チャック19により(LEDチップ1が接合された)サブマウント基板2を吸着し、次の図2に移行する。真空吸着チャック19には、真空吸着チャック19がサブマウント基板2を吸着したときに、LEDチップ1が触れないで収まる(LEDチップ1を逃がす)、LEDチップ1より大きい凹部20が形成されている。但し、凹部20を設けない形態もありうる。   Subsequently, as shown in FIG. 1G, the vacuum suction chuck 19 is inserted into the chamber 11 through the upper opening 12, and as shown in FIG. The bonded submount substrate 2 is sucked, and the process proceeds to the next FIG. The vacuum suction chuck 19 is formed with a recess 20 larger than the LED chip 1 so that when the vacuum suction chuck 19 sucks the submount substrate 2, the LED chip 1 is accommodated without touching (the LED chip 1 is released). . However, there may be a form in which the recess 20 is not provided.

図2及び図3は、窒化アルミニウムよりなるベース基板5に前記(LEDチップ1が接合された)サブマウント基板2をそれらの間に挟んだAuSnシート状プリフォーム7により接合する工程を記している。ベース基板5の平面寸法はサブマウント基板2の平面寸法より大きく、サブマウント基板2はその周りにベース基板5の上面が現れるような基板位置に接合される。図4(a)の丸数字2は、この工程を概念的に示している。予め、ベース基板5に、例えば開口直径0.25mmの吸引孔6を形成しておく。また、AuSnシート状プリフォーム7には、例えば、サブマウント基板2の接合面(四角形の下面)の四縁よりもそれぞれ0.2mm控えた四辺をもつ、厚さ20μmのAuSn共晶シート状プリフォームを用いる。   2 and 3 show a process of bonding the submount substrate 2 (with the LED chip 1 bonded) to the base substrate 5 made of aluminum nitride with an AuSn sheet-like preform 7 sandwiched between them. . The planar dimension of the base substrate 5 is larger than the planar dimension of the submount substrate 2, and the submount substrate 2 is bonded to the substrate position such that the upper surface of the base substrate 5 appears around it. The circled number 2 in FIG. 4A conceptually shows this process. For example, a suction hole 6 having an opening diameter of 0.25 mm is formed in the base substrate 5 in advance. In addition, the AuSn sheet-like preform 7 includes, for example, an AuSn eutectic sheet-like preform having a thickness of 20 μm and having four sides each 0.2 mm away from the four edges of the bonding surface (rectangular lower surface) of the submount substrate 2. Use renovation.

図2(i)に示すように、上部開口22のあるチャンバー21の内部において、貫通孔24を備えた吸着台23の上にベース基板5を置く。貫通孔24と吸引孔6とは連通し、吸着台23の裏側に接続した真空吸引装置(図示略)により貫通孔24及び吸引孔6からベース基板5の上方の気体吸引を開始する。ガス供給管25から、サブマウント基板2の表面側に、非酸化性ガスとしての窒素ガス26の吹き付けを開始する。   As shown in FIG. 2 (i), the base substrate 5 is placed on the suction table 23 having the through hole 24 inside the chamber 21 having the upper opening 22. The through hole 24 and the suction hole 6 communicate with each other, and gas suction above the base substrate 5 is started from the through hole 24 and the suction hole 6 by a vacuum suction device (not shown) connected to the back side of the suction table 23. Blowing of nitrogen gas 26 as a non-oxidizing gas is started from the gas supply pipe 25 to the surface side of the submount substrate 2.

この気体吸引と窒素ガス26の吹き付けを継続しながら、公知の真空吸着チャック27によりAuSnシート状プリフォーム7を吸着把持して、上部開口22からチャンバー21の内部に挿入し、図2(j)に示すように、ベース基板5の表面にその吸引孔6の開口を覆うようにAuSnシート状プリフォーム7を位置決めして置く。AuSnシート状プリフォーム7は吸引孔6からの吸引によりベース基板5の表面に吸着するので、図2(k)に示すように、真空吸着チャック27による吸着を止め、真空吸着チャック27を退避させる。真空吸着チャック27を退避させても、AuSnシート状プリフォーム7はベース基板5の表面に吸着しているので、吹き付けられる窒素ガス26によって剥がれたり横にずれたりすることはなく、位置精度が保たれる。   While continuing the gas suction and the blowing of the nitrogen gas 26, the AuSn sheet-like preform 7 is sucked and held by the known vacuum suction chuck 27 and inserted into the chamber 21 through the upper opening 22, and FIG. The AuSn sheet-like preform 7 is positioned and placed on the surface of the base substrate 5 so as to cover the opening of the suction hole 6 as shown in FIG. Since the AuSn sheet-like preform 7 is attracted to the surface of the base substrate 5 by suction from the suction hole 6, as shown in FIG. 2 (k), the suction by the vacuum suction chuck 27 is stopped and the vacuum suction chuck 27 is retracted. . Even if the vacuum chucking chuck 27 is retracted, the AuSn sheet-like preform 7 is adsorbed on the surface of the base substrate 5, so that it is not peeled off or displaced laterally by the blown nitrogen gas 26, and the positional accuracy is maintained. Be drunk.

図2(l)に示すように、前記の図1(h)で真空吸着チャック19により吸着した(LEDチップ1が接合された)サブマウント基板2を、上部開口22からチャンバー21の内部に挿入し、図3(m)に示すように、AuSnシート状プリフォーム7の上面にサブマウント基板2を置き、サブマウント基板2の吸着を止める。真空吸着チャック19でサブマウント基板2を押さえ続けるので、AuSnシート状プリフォーム7が動く心配はないため、吸引孔6からのAuSnシート状プリフォーム7の吸着も止める。   As shown in FIG. 2 (l), the submount substrate 2 sucked by the vacuum suction chuck 19 (LED chip 1 joined) in FIG. 1 (h) is inserted into the chamber 21 through the upper opening 22. Then, as shown in FIG. 3 (m), the submount substrate 2 is placed on the upper surface of the AuSn sheet-like preform 7, and the adsorption of the submount substrate 2 is stopped. Since the sub-mount substrate 2 is kept pressed by the vacuum suction chuck 19, there is no fear that the AuSn sheet-shaped preform 7 moves, so the suction of the AuSn sheet-shaped preform 7 from the suction hole 6 is also stopped.

引き続き窒素ガス26を吹き付けながら、吸着台23及び真空吸着チャック19をこれらに設けられたヒーター(図示略)により昇温させることにより、ベース基板5及びサブマウント基板2の両方からAuSnシート状プリフォーム7を加熱して溶融させ、ベース基板5とサブマウント基板2との接合を開始する。図3(m)の太線矢印は熱の伝導を表している。この接合時に、AuSnシート状プリフォーム7の下(ベース基板5との間)に、周囲気体や不純物の気化によるガスが巻き込まれたとしても、それらは吸引孔6から吸引されて除去されるため、前記図5(a)と同様にボイドの無い接合が可能となる。このため、接合面積が低下することはなく、従って接合強度不足や放熱不足が起こることもない。   While the nitrogen gas 26 is continuously blown, the temperature of the suction table 23 and the vacuum suction chuck 19 is raised by a heater (not shown) provided on them, whereby an AuSn sheet-like preform is formed from both the base substrate 5 and the submount substrate 2. 7 is heated and melted to start bonding of the base substrate 5 and the submount substrate 2. Thick line arrows in FIG. 3 (m) represent heat conduction. At the time of this bonding, even if gas due to vaporization of ambient gas or impurities is caught under the AuSn sheet-like preform 7 (between the base substrate 5), they are sucked and removed from the suction holes 6. As in FIG. 5A, joining without voids is possible. For this reason, the bonding area does not decrease, and therefore, insufficient bonding strength and insufficient heat dissipation do not occur.

前記加熱を止め、溶融したAuSnシート状プリフォーム7が凝固することにより、ベース基板5とサブマウント基板2とが接合された後、図3(n)に示すように、窒素ガス26の吹き付けを止めるとともに、真空吸着チャック19を退避させる。以上により、図3(o)及び図4(b)に示すように、LEDチップ1がサブマウント基板2に接合され、サブマウント基板2がベース基板5に接合されてなるLEDモジュール30が作成される。   After the heating is stopped and the melted AuSn sheet-like preform 7 is solidified, the base substrate 5 and the submount substrate 2 are joined, and then, as shown in FIG. At the same time, the vacuum suction chuck 19 is retracted. As described above, as shown in FIGS. 3O and 4B, an LED module 30 in which the LED chip 1 is bonded to the submount substrate 2 and the submount substrate 2 is bonded to the base substrate 5 is produced. The

なお、本発明は前記実施例に限定されるものではなく、発明の趣旨から逸脱しない範囲で適宜変更して具体化することもできる。
(1)図5(b)に示すように、一つのサブマウント基板2に複数のLEDチップ1をそれぞれAuSnシート状プリフォーム4により接合する態様に、前記実施例を適用すること。当然、この場合には、サブマウント基板2に複数の吸引孔を形成して、各AuSnシート状プリフォーム4を吸着することになる。
In addition, this invention is not limited to the said Example, In the range which does not deviate from the meaning of invention, it can change suitably and can be actualized.
(1) As shown in FIG. 5 (b), the embodiment described above is applied to a mode in which a plurality of LED chips 1 are bonded to a single submount substrate 2 by an AuSn sheet-like preform 4, respectively. Of course, in this case, a plurality of suction holes are formed in the submount substrate 2 to adsorb each AuSn sheet-like preform 4.

1 LEDチップ
2 サブマウント基板
3 吸引孔
4 AuSnシート状プリフォーム
5 ベース基板
6 吸引孔
7 AuSnシート状プリフォーム
15 ガス供給管
16 窒素ガス
19 真空吸着チャック
20 凹部
25 ガス供給管
26 窒素ガス
30 LEDモジュール
DESCRIPTION OF SYMBOLS 1 LED chip 2 Submount substrate 3 Suction hole 4 AuSn sheet-like preform 5 Base substrate 6 Suction hole 7 AuSn sheet-like preform 15 Gas supply pipe 16 Nitrogen gas 19 Vacuum adsorption chuck 20 Recessed part 25 Gas supply pipe 26 Nitrogen gas 30 LED module

Claims (4)

被接合基板に接合体を実装した基板実装装置の構成部品である被接合基板と接合体とを、それらの間に挟んだAuSnシート状プリフォームにより接合する方法において、
被接合基板の表面側に非酸化性ガスを吹き付けながら、吸引孔を形成した被接合基板の表面に該吸引孔の開口を覆うようにAuSnシート状プリフォームを置き、AuSnシート状プリフォームを吸引孔から真空吸引して被接合基板の表面に吸着し、該AuSnシート状プリフォームに接合体を置く第1のステップと、
被接合基板及び接合体からAuSnシート状プリフォームを加熱して溶融させ、被接合基板と接合体とを接合する第2のステップとを含むことを特徴とする基板実装装置の接合方法。
In a method of bonding a bonded substrate and a bonded body, which are components of a substrate mounting apparatus in which the bonded body is mounted on the bonded substrate, with an AuSn sheet-like preform sandwiched between them,
An AuSn sheet-shaped preform is placed on the surface of the substrate to be bonded, which is formed with suction holes, while the non-oxidizing gas is sprayed on the surface side of the substrate to be bonded, and the AuSn sheet-shaped preform is sucked to cover the opening of the suction holes. A first step of vacuum suction from the hole and adsorption to the surface of the substrate to be joined, and placing the joined body on the AuSn sheet-like preform;
A bonding method for a substrate mounting apparatus, comprising: a second step of heating and melting an AuSn sheet-shaped preform from a bonded substrate and a bonded body, and bonding the bonded substrate and the bonded body.
前記第1のステップでは、AuSnシート状プリフォームに接合体を置いた後、吸引孔からのAuSnシート状プリフォームの吸着を止める請求項1記載の基板実装装置の接合方法。   2. The method for bonding a substrate mounting apparatus according to claim 1, wherein, in the first step, after the bonded body is placed on the AuSn sheet-shaped preform, adsorption of the AuSn sheet-shaped preform from the suction hole is stopped. 基板実装装置がLEDパッケージである請求項1又は2記載の基板実装装置の接合方法。   The method for bonding a substrate mounting apparatus according to claim 1 or 2, wherein the substrate mounting apparatus is an LED package. 接合体が、LEDチップが接合されたサブマウント基板であり、
第1のステップにおけるAuSnシート状プリフォームに接合体としてのサブマウント基板を置く作業と、第2ステップとを、LEDチップが触れないで収まる凹部をそなえたチャックによりサブマウント基板を把持して行う請求項3記載の基板実装装置の接合方法。
The joined body is a submount substrate to which the LED chip is joined,
The operation of placing the submount substrate as a bonded body on the AuSn sheet-like preform in the first step and the second step are performed by holding the submount substrate with a chuck having a recess that is not touched by the LED chip. The method for bonding a substrate mounting apparatus according to claim 3.
JP2009275281A 2009-12-03 2009-12-03 Bonding method of substrate mounting device Withdrawn JP2011119436A (en)

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JP2009275281A JP2011119436A (en) 2009-12-03 2009-12-03 Bonding method of substrate mounting device
US12/926,637 US8482015B2 (en) 2009-12-03 2010-12-01 LED light emitting apparatus and vehicle headlamp using the same
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210016637A (en) 2018-08-21 2021-02-16 미쓰비시 마테리알 가부시키가이샤 Electronic components and methods of manufacturing electronic components
JP2021164928A (en) * 2020-04-06 2021-10-14 アスリートFa株式会社 Joining device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210016637A (en) 2018-08-21 2021-02-16 미쓰비시 마테리알 가부시키가이샤 Electronic components and methods of manufacturing electronic components
US11396164B2 (en) 2018-08-21 2022-07-26 Mitsubishi Materials Corporation Electronic component and method of manufacturing electronic component
JP2021164928A (en) * 2020-04-06 2021-10-14 アスリートFa株式会社 Joining device
JP7425476B2 (en) 2020-04-06 2024-01-31 アスリートFa株式会社 Bonding equipment

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