JP2011117042A - Surface treatment member - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface treatment member having a high withstand voltage anodic oxide film by a method different from the conventional one. <P>SOLUTION: A surface treated aluminum based member used for voltage applying part comprises a base material comprising aluminum or an aluminum alloy and having the anodic oxide film formed on the base material. In the porous layer of the anodic oxide film, the ratio (d1/D1) of the average thickness d1 of a solid part between the pore parts on the surface to the average thickness D1 of the solid part between the pore parts of the base material side is ≤0.80. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention is an aluminum that is useful as a material for vacuum chambers such as semiconductor and liquid crystal manufacturing equipment and components provided in the vacuum chamber, such as dry etching equipment, CVD equipment, ion implantation equipment, and sputtering equipment. And a surface-treated member whose surface is anodized.

  An anodized film is formed on the surface of a member made of aluminum or aluminum alloy (hereinafter sometimes referred to as "aluminum alloy") as a base material, and the base material is given plasma resistance and gas corrosion resistance. The anodizing treatment performed has been widely performed conventionally.

  For example, a vacuum chamber used in a plasma processing apparatus of a semiconductor manufacturing facility and various parts provided in the vacuum chamber are generally configured using an aluminum alloy. However, if the aluminum alloy is used without any treatment (innocent), plasma resistance, gas corrosion resistance, etc. cannot be maintained. For these reasons, plasma resistance, gas corrosion resistance, and the like are imparted by forming an anodized film on the surface of a member made of an aluminum alloy.

  On the other hand, in recent years, due to the miniaturization of the wiring width, with the increase in plasma density, the power input to generate plasma is increasing, and in the conventional anodic oxide film, it occurs when high power is input. High voltage can cause dielectric breakdown in the coating. Since the electrical characteristics change in the portion where such dielectric breakdown occurs, the etching uniformity and the film formation uniformity are deteriorated. Therefore, it is desired to increase the withstand voltage of the anodized film.

  Various techniques have been proposed so far for increasing the withstand voltage of anodized films. For example, Patent Document 1 proposes a method in which an anodized film is formed in a mixed solution of oxalic acid and formic acid and then anodized again in an alkali borate. However, in this method, an anodizing treatment in an alkali borate requires an expensive rectifier corresponding to a high voltage of several hundred volts or more, and there is a problem in terms of equipment cost.

  Patent Document 2 proposes a method of coating an anodic oxide film on a anodic oxide film with a polyimide film formed using a polyimide precursor. However, this technique requires additional equipment such as electrodeposition of a polyimide precursor.

  On the other hand, Patent Document 3 proposes a method of forming a high withstand voltage barrier type anodic oxide film using an electrolytic solution in which a salt of an inorganic acid is dissolved in a solvent having an alcoholic hydroxyl group. However, even in this technique, there is a problem that the management of the change in the concentration of alcohol in the electrolytic liquid due to the anodizing treatment becomes complicated.

JP 60-204807 A JP 2004-59997 A JP 11-229157 A

  The present invention has been made paying attention to the above circumstances, and an object thereof is to provide a surface-treated member having a high withstand voltage anodized film by a method different from the conventional one.

  The inventors of the present invention have made extensive studies to solve the above problems. As a result, the film structure in the porous layer of the anodized film is determined by the ratio of the average thickness d1 of the solid portion between the pores on the surface to the average thickness D1 of the solid portion between the pores on the substrate side [(d1 / D1): May be simply referred to as “the ratio of the solid part thickness between pores (d1 / D1)”) to 0.80 or less, that is, the thickness of the solid part between pores is reduced on the surface, and the pores on the substrate side are reduced. The inventors have found that an anodic oxide film having a high withstand voltage can be formed by increasing the thickness of the solid part, and the present invention has been completed.

  That is, the surface-treated member according to the present invention is a surface-treated aluminum-based member used for a voltage application unit, and a substrate made of aluminum or an aluminum alloy and an anodized film formed on the substrate surface. In the porous layer of the anodized film, the ratio (d1 / D1) of the average thickness d1 of the solid portion between the pores on the surface to the average thickness D1 of the solid portion between the pores on the substrate side is 0.80 or less. It has a gist at a certain point.

  In the surface treatment member of the present invention, the thickness of the anodized film is preferably more than 5 μm.

  The present invention is configured as described above, and in the film structure of the porous layer of the anodized film, the ratio of the solid part thickness between the pores is 0.80 or less so that the high withstand voltage is obtained. A surface-treated member having an anodic oxide film could be realized.

It is sectional drawing which showed typically the film | membrane structure of the anodic oxide film in the surface treatment member of this invention. It is the top view which showed typically the film | membrane structure of the anodic oxide film in the surface treatment member of this invention. It is a graph which shows the relationship between the ratio (d1 / D1) of the solid part thickness between pores, and the withstand voltage per unit film thickness.

  The configuration of the present invention will be described in detail along the background of the completion of the present invention. Although the anodized film is an insulator, a leak current flows through the film when a voltage is applied. The dielectric breakdown phenomenon in the anodized film occurs when the Joule heat generated by the leak current flowing through the film when a voltage is applied exceeds the amount of heat necessary to dissolve the volume of the solid part of the film that becomes the path of the leak current. It was considered that this phenomenon was generated when the anodic oxide film just above the base aluminum alloy was dissolved.

  In order to suppress the dielectric breakdown as described above, the leakage current of the anodized film directly on the base aluminum alloy is dispersed, thereby suppressing the concentration of current, dispersing the generated Joule heat, and the path of the leakage current. It was considered effective to increase the Joule heat generated above the amount of heat necessary for dissolution of the film by increasing the volume of the film.

  FIG. 1 is a cross-sectional view schematically showing the film structure of the anodized film in the surface treatment member of the present invention, and FIG. 2 is a plan view. 1 and 2, 1 is a base material, 2 is a solid part between pores, 3 (and 3a to 3c) are pores, 4 is a porous layer (portion-formed portion), and 5 is a barrier layer (with porous layer 4). The layer without the pores 3 interposed between the base material) and 6 indicate the boundaries between the solid portions between the pores.

In the surface treatment member of the present invention, the ratio (d1 / D1) of the average thickness d1 of the solid portion 2 between pores on the surface and the average thickness D1 of the solid portion 2 between pores on the substrate side is 0.80 or less. It satisfies the requirements. Note that the average thickness d1 is the closest (adjacent) pore 3 to 10 or more adjacent pores 3 when the surface of the anodized film is observed with a scanning electron microscope (SEM) (FIG. 2). The shortest distance between them (the minimum thickness of the solid portion 2 between the pores: indicated by d ₀ in the figure) is measured, and the measured values are averaged. For example, in FIG. 2, the minimum thickness d ₀ of the solid portion between the pores on the surface means the shortest distance between the adjacent pores 3a and 3b and does not include the distance between the non-adjacent pores 3a and 3c. is there.

The average thickness D1 is the thickness of the solid part between pores at the part where the boundary part 6 between the solid parts between pores is in contact with the base material 1 in the fracture surface of the film observed with a scanning electron microscope (SEM) (FIG. 1). Is D _0, and 10 or more adjacent D ₀ are averaged. Since the film breaks by connecting the nearest (adjacent) pores, D ₀ is the shortest distance between adjacent pores in the same manner as d ₀ .

  Further, A in FIG. 1 indicates the thickness of the anodic oxide film, and this thickness A can be measured by the eddy current measurement method described in JISH 8680-2, which is the thickness including the barrier layer. . The thickness of the anodic oxide film defined in the present invention is the minimum film thickness value at the surface treatment portion to which the voltage of the product is applied.

  The leak current does not depend on the diameter of the pore 3 (pore diameter) because it passes through the solid portion 2 between the pores. For example, even when the pore diameter on the surface side is larger than the pore diameter on the base material side (see FIG. 1), the above-mentioned ratio (d1 / D1) satisfies 0.80 or less, thereby increasing the high withstand voltage. It expresses sex.

FIG. 1 shows the case where the thicknesses d ₀ and D _{0 of the} solid portion 2 between the pores in the porous layer 4 continuously change (increases with d ₀ → D ₀ ). Of course, d ₀ and D ₀ may change (increase) discontinuously in an arbitrary section in the depth direction.

  The surface treatment member of the present invention comprises a base material made of an aluminum alloy (or aluminum) and an anodized film formed on the surface of the base material. The aluminum alloy used in the present invention does not need to be an aluminum alloy having a special chemical composition, and a commercially available aluminum alloy, for example, an aluminum alloy such as 6061 and 5052 defined in JIS H 4000 is used as a base material. it can.

  An anodized film is an anode formed by immersing a base material made of an aluminum alloy in a treatment solution such as a sulfuric acid solution, an oxalic acid solution, a phosphoric acid solution, or a mixed solution thereof, and performing an electrolytic treatment. It is formed on the surface of an aluminum alloy.

The film satisfying the present invention is, for example, an anodized film produced under normal anodizing treatment conditions, which is immersed in an acid or the like to be chemically dissolved, thereby reducing the solid part thickness between pores on the surface layer side, The ratio of the solid portion thickness between the surface and the substrate side (d1 / D1) may be controlled to 0.80 or less. For the purpose of removing oxides on the aluminum alloy surface, hydrofluoric acid aqueous solution or buffered hydrofluoric acid solution In the case where a treatment liquid tank capable of dissolving an anodic oxide film such as (a mixed aqueous solution of HF and NH ₄ F) is already provided, this may be used.

As an aqueous solution containing fluorine, the higher the fluorine concentration and the higher the temperature (liquid temperature), the easier the chemical dissolution of the surface of the anodized film by the treatment solution occurs, and the solid portion between pores on the surface layer side This is effective for reducing the thickness (d ₀ ) in a short time. On the other hand, however, if the chemical dissolution becomes too large, the barrier layer may disappear and the purpose of forming the anodized film may not be achieved. For these reasons, it is necessary to appropriately set the conditions within an appropriate range. The conditions vary depending on the type of the anodic oxide film, but it is preferable to immerse in a 0.05 to 1.0 mol / L hydrofluoric acid aqueous solution for about 0.5 to 20 minutes at room temperature (25 ° C.), for example.

  The means for obtaining a film satisfying the present invention is not limited to the above-described method, and it is sufficient that the requirements of the present invention are satisfied by an anodic oxidation treatment or a method other than those described later.

  The withstand voltage of the surface treatment member configured as described above increases as the thickness of the anodized film increases. On the other hand, if the film thickness becomes too thick, the thermal conductivity of the film decreases. It will be. Since the inside of the chamber is adjusted at a high process temperature, a high thermal conductivity is required. From this point of view, a thinner film thickness is preferable.

  Considering the voltage resistance, the thickness of the anodized film is preferably thicker than 5 μm. Further, since the required thermal conductivity depends on the temperature and member shape corresponding to the film forming process, it may be set as appropriate, but is preferably 120 μm or less, more preferably 90 μm or less.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited by the following examples, but may be appropriately modified within a range that can meet the purpose described above and below. Of course, it is possible to implement them, and they are all included in the technical scope of the present invention.

First, an aluminum alloy ingot is melted (size: 220 mm ^W × 250 mm ^L × 100 mm ^t , cooling rate: 15 to 10 ° C./second), the ingot is cut and faced (size: 220 mm ^W × 150 mm ^L × 60 mm ^t ), and then subjected to soaking (540 ° C. × 4 hours).

After soaking, the 60 mm thick material is hot rolled into a 6 mm thick plate and cut (size: 220 mm ^W × 450 mm ^L × 6 mm ^t ), followed by solution treatment (510-520 ° C. × 30 minutes). ). After solution treatment, water quenching was performed, and an aging treatment (160 to 180 ° C. × 8 hours) was performed to obtain a game metal plate. The chemical component composition of the aluminum alloy used at this time corresponds to 6061 alloy defined in JIS H4000.

A test piece of size: 25 mm × 35 mm (rolling direction) × 3 mm ^t was cut out from the resulting game metal plate, and the surface thereof was subjected to face machining. Next, after immersing in a 60 ° C.-10% NaOH aqueous solution for 2 minutes, washed with water, further immersed in a 30 ° C.-20% HNO ₃ aqueous solution for 2 minutes and then washed with water to clean the surface, the results are shown in Table 1 below. Various anodized films were formed on the surface of the test piece by anodizing under the conditions (anodizing solution, treating solution temperature, electrolytic voltage, post-treatment).

  About each test piece obtained above, withstand voltage property was evaluated. At this time, using a withstand voltage tester (“TOS5050A” manufactured by Kikusui Electronics Co., Ltd.), the + terminal is connected to the needle-type probe, is brought into contact with the anodized film, and the − terminal is connected to the aluminum alloy substrate. A voltage was applied, and the withstand voltage was evaluated by a dielectric breakdown voltage (this voltage is referred to as “withstand voltage”). The withstand voltage per unit film thickness was also calculated.

The average thickness d1 is determined by observing the surface of the anodized film with a scanning electron microscope (SEM) (FIG. 2), and for the 10 adjacent pores 3, the shortest distance between the adjacent (adjacent) pores 3 ( The minimum thickness of the solid part 2 between the pores (indicated by d ₀ in the figure) was measured, and the measured values were averaged.

The average thickness D1 is determined by observing the fracture surface of the film (FIG. 1) with a scanning electron microscope (SEM), and the inter-pore solid portion thickness at the portion where the boundary portion 6 between the inter-pore solid portions 2 contacts the substrate. Was D _0, and 10 adjacent D ₀ were averaged. The film thickness was measured by the eddy current measurement method described in JISH 8680-2 at the portion where the withstand voltage was measured with a needle probe.

  These results are collectively shown in Table 2 below. Further, FIG. 3 shows the relationship between the ratio (d1 / D1) of the solid part thickness between pores of the film having a film thickness exceeding 5 μm and the withstand voltage per unit film thickness.

  From these results, it can be considered as follows. Test No. Examples Nos. 3, 5, 8, 9, 12, 14, 16, and 18 are examples that satisfy the requirements defined in the present invention, and test Nos. That do not satisfy the requirements defined in the present invention. As compared with the comparative examples of 1, 2, 4, 6, 7, 10, 11, 13, 15, and 17, it is clear that the withstand voltage at the same film thickness is high.

  In addition, No. satisfying the requirements defined in the present invention. 18 is a No. 18 that does not satisfy the requirements. Although the withstand voltage is higher than 17, no. No. 17 has a lower withstand voltage per unit film thickness as compared with a film thickness exceeding 5 μm. As shown in FIG. 18, even if the requirements of the present invention are satisfied, the high withstand voltage effect per unit film thickness is small as compared with the film thickness exceeding 5 μm.

  This is because, when the film thickness is thin, it exists in the aluminum alloy, and crystal precipitates (crystallized material and precipitates) taken into the anodized film become a current path to deteriorate the withstand voltage. The high withstand voltage effect is considered to be small because the effect of “dispersing the leakage current and suppressing the dissolution of the anodic oxide film directly on the base aluminum alloy” by satisfying the requirements of the present invention is considered to be small. Thus, the effect of the present invention can be greatly obtained.

  The present invention provides a film with a higher withstand voltage at any same film thickness that is restricted in terms of thermal conductivity required for parts, and does not limit the film thickness. With the miniaturization of the wiring width, the withstand voltage of 2500 V or more is desired due to the increased input power for plasma generation. The effect of is demonstrated.

  As is clear from these results, the surface-treated member that satisfies the requirements defined in the present invention exhibits excellent high withstand voltage.

DESCRIPTION OF SYMBOLS 1 Base material 2 Solid part between pores 3 Pore 4 Porous layer 5 Barrier layer 6 Boundary part

Claims (2)

  A surface-treated aluminum-based member used for a voltage application unit, a base material made of aluminum or an aluminum alloy, and an anodized film formed on the surface of the base material, in the porous layer of the anodized film, A surface-treated member, wherein a ratio (d1 / D1) of an average thickness d1 of the solid portion between pores on the surface and an average thickness D1 of the solid portion between pores on the substrate side is 0.80 or less.   The surface-treated member according to claim 1, wherein the anodized film has a thickness of more than 5 μm.

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