JP2011117013A - Film deposition method and method for producing solar battery - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition method which can make the thickness of the film such as a transparent conductive film deposited on the surface of a substrate more uniform even in the case when a texture is formed on the surface of the substrate, and a method for producing a solar battery. <P>SOLUTION: A vapor deposition material 25 supplied from a vapor deposition source 20 is vapor-deposited on a substrate 200 on which geometric unevenness has been formed to form a transparent conductive film on the surface of the substrate 200. The substrate 200 is positioned in a tilted state in such a manner that the distance d1 between the edge part 200a of the substrate 200 located near the direct upper part of the vapor deposition source 20 and the vapor deposition material supply part 21, and the distance d2 between the edge part 200b of the substrate 200 and the vapor deposition material supply part 21 are almost made the same. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a film forming method for forming a film on the surface of a substrate by depositing a vapor deposition material supplied from a vapor deposition source on a substrate on which geometrical unevenness due to a plurality of convex portions is formed, and a solar cell. It relates to a manufacturing method.

  Solar cells are expected as a new energy source because they can directly convert clean and infinitely supplied solar energy into electrical energy. A solar cell is generally composed of a crystalline semiconductor such as polycrystalline silicon or single crystal silicon, an amorphous semiconductor, or a compound semiconductor. Further, in order to efficiently extract electricity generated by the solar cell, a transparent conductive film is often formed on the light incident surface or the opposite surface (light transmission side).

  For the formation of the transparent conductive film, a so-called Physical Vapor Deposition (PVD) type film forming apparatus (such as a sputtering apparatus) is widely used. In the PVD film forming apparatus, the film thickness formed on the surface of the substrate may be different depending on the distance between the evaporation source that supplies the evaporation material and the substrate. Specifically, the vapor deposition material is deposited on the surface of the substrate as the substrate sequentially passes over the vapor deposition source, but the film thickness of the portion located immediately above the vapor deposition source is obliquely above the vapor deposition source. It tends to be thicker than the film thickness of the portion located in the area. When the formed film thickness is non-uniform, the characteristics (resistance value, etc.) of the solar cell are reduced.

  Therefore, a method has been proposed for eliminating the non-uniformity of the film thickness by bringing the vapor deposition source closer to the portion located obliquely above the vapor deposition source, specifically, the outer edge of the substrate (for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2000-129436 (page 4, FIG. 1)

  However, the conventional method for eliminating the non-uniform film thickness has the following problems. That is, when geometrical irregularities, so-called textures, are formed on the surface of the substrate, there has been a problem that the film thickness of the transparent conductive film tends to become more uneven.

  Specifically, when the surface of the substrate has irregularities formed by a plurality of convex portions such as pyramids, the angle with the straight line extending from the vapor deposition material supply portion of the vapor deposition source when the vapor deposition source is viewed from the side There is a surface (opposing surface) where the angle increases and a surface (non-facing surface) where the angle with the straight line decreases. When the angle of the non-facing surface is significantly lower (for example, less than 0 degrees) compared to the angle of the facing surface (for example, about 90 degrees), the deposition material is difficult to deposit, and the film thickness of the non-facing surface Becomes thinner than the film thickness of the opposing surface. Since the resistance value is inversely proportional to the film thickness of the transparent conductive film, the non-facing surface increases the resistance value of the entire substrate, and the characteristics of the solar cell deteriorate.

  Therefore, the present invention provides a film forming method that can make the film thickness formed on the surface more uniform, such as a transparent conductive film, and a method for manufacturing a solar cell, even when a texture is formed on the surface of the substrate. For the purpose of provision.

  In order to solve the above-described problem, a feature of the present invention is supplied from a vapor deposition source (vapor deposition source 20) to a substrate (substrate 200) on which geometric irregularities are formed by a plurality of convex portions (convex portions 210). A vapor deposition material (vapor deposition material 25) is vapor-deposited, and the unevenness is a straight line extending from the vapor deposition material supply unit (vapor deposition material supply unit 21) of the vapor deposition source in a lateral view of any one of the vapor deposition sources. The angle (angle α2) on the vapor deposition source side between the opposing surface (opposing surface 210a) where the angle (angle α1) on the vapor deposition source side with respect to the straight line L2) is a predetermined angle and the supply line is greater than the predetermined angle. A film forming method including a non-facing surface (non-facing surface 210b) having a small angle, and forming a film (transparent conductive film 220) on the surface of the substrate. Incident into the substrate through a non-facing surface A positioning step of positioning the substrate on the substrate, and a deposition step of supplying the deposition material from the deposition source to the substrate positioned in the positioning step and depositing the deposition material on the surface of the substrate. This is the gist.

  In the positioning step, in the lateral view, a first distance (distance d1) between one end portion (end portion 200a) of the substrate located immediately above the vapor deposition source and the vapor deposition material supply unit, and The substrate may be positioned in an inclined state so that the second distance (distance d2) between the other end portion (end portion 200b) of the substrate and the vapor deposition material supply unit is substantially the same.

  In addition, the method further includes a substrate transport step for transporting the substrate positioned in the positioning step and passing the substrate above the vapor deposition source that supplies the vapor deposition material. In the positioning step, the substrate is downstream in the transport direction (direction DR1). The substrate may be positioned so that the first distance and the second distance are substantially the same when the deposition source is viewed from the side.

  Further, in the positioning step, in the lateral view, one region (region A1) that passes through the vapor deposition material supply unit and is divided on the basis of a center line (center line CL) along the vertical direction (direction DR2). ) And the other region (region A2) divided with respect to the center line as a reference.

  Furthermore, in the positioning step, a first holding part (tray 111) that holds the substrate located in the one area, and a second holding part (tray 112) that holds the board located in the other area, In the lateral view, an angle (angle θ1) formed by an outer end (end portion 200b) of the substrate held by the first holding portion and an orthogonal line (orthogonal line L1) orthogonal to the center line, And an inner portion (inner portion 111in) of the first holding portion so that an angle (angle θ2) formed by the outer edge (end portion 200b) of the substrate held by the second holding portion and the orthogonal line can be changed. ) And the inner part (inner part 112in) of the second holding part, and the position of the substrate is determined by using a substrate holding mechanism (substrate transport part 100) including a connecting part (connecting part 130) that connects the inner part (inner part 112in). Good.

  Another feature of the present invention is that vapor deposition material supplied from a vapor deposition source is vapor-deposited on a substrate on which a plurality of geometric irregularities are formed, and in the lateral view, the irregularities are vapor deposition material of the vapor deposition source. An opposing surface in which the angle on the vapor deposition source side with a supply straight line extending from the supply unit is a predetermined angle, and a non-opposing surface in which an angle on the vapor deposition source side with the supply straight line is smaller than the predetermined angle A positioning step of positioning the substrate so that the supply line is incident on the substrate through the non-opposing surface in a side view of the vapor deposition source; A deposition step of supplying the deposition material from the deposition source to the substrate positioned in the positioning step, depositing the deposition material on the surface of the substrate, and forming a film on the surface of the substrate; This The the gist.

  According to the features of the present invention, even when a texture is formed on the surface of a substrate, a film forming method capable of making the film thickness formed on the surface more uniform, such as a transparent conductive film, and manufacturing a solar cell A method can be provided.

It is a schematic block diagram of the film-forming apparatus 10 used for implementation of the film-forming method concerning embodiment of this invention. It is a schematic diagram of the cross-sectional structure of the solar cell 300 which concerns on embodiment of this invention. It is a figure which shows the positional relationship of the board | substrate conveyance part 100 and the vapor deposition source 20 in the chamber 40 which concerns on embodiment of this invention. It is a figure which shows the positional relationship of the surface of the board | substrate 200 with which the convex part 210 which concerns on embodiment of this invention was formed, and the vapor deposition source 20. FIG. It is a figure which shows the manufacture flow of the solar cell 300 using the film-forming apparatus 10 which concerns on embodiment of this invention. 6 is a graph showing the relationship between the sheet resistance of the transparent conductive film 220 according to the embodiment of the present invention and the angle θ1 (angle θ2) of the tray 111 (tray 112) of the substrate transport unit 100. It is a figure which shows the board | substrate conveyance part which concerns on the example of a change of this invention which concerns on embodiment of this invention.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic and ratios of dimensions and the like are different from actual ones.

  Accordingly, specific dimensions and the like should be determined in consideration of the following description. Moreover, the part from which the relationship and ratio of a mutual dimension differ also in between drawings may be contained.

(1) Schematic Configuration of Film Forming Apparatus FIG. 1 is a schematic configuration diagram of a film forming apparatus 10 used for carrying out a film forming method according to an embodiment of the present invention. As shown in FIG. 1, the film forming apparatus 10 forms a transparent conductive film 220 (not shown in FIG. 1, see FIG. 2) on the surface of the substrate 200 by depositing a deposition material 25 on the substrate 200. Specifically, the film forming apparatus 10 forms the transparent conductive film 220 by depositing the vapor deposition material 25 on the surface of the substrate 200 by PVD.

  The board | substrate 200 is used for manufacture of the solar cell 300 (refer FIG. 2). A plurality of geometric convex portions 210 (not shown in FIG. 1, refer to FIG. 4), so-called texture, is formed on the surface of the substrate 200.

  The film forming apparatus 10 is a so-called in-line apparatus, and includes a vapor deposition source 20, a guide rail 30, a chamber 40, and a substrate transfer unit 100.

  The vapor deposition source 20 is provided inside the chamber 40 and provides the vapor deposition material 25 in the chamber 40. Specifically, the vapor deposition material 25 is continuously provided from the vapor deposition material supply unit 21 provided on the upper part of the vapor deposition source 20.

  The pair of guide rails 30 are arranged so as to penetrate the chamber 40. In the chamber 40, a narrow inlet 30in and outlet 30out are formed along the shape of the substrate transfer unit 100. The guide rail 30 is disposed so as to enter the inside of the chamber 40 through the inlet 30in and out of the chamber 40 through the outlet 30out.

  The substrate transport unit 100 travels on the pair of guide rails 30 in the direction DR1, and transports the substrate 200 into the chamber 40. The substrate transport unit 100 includes a tray 111, a tray 112, wheels 120, and a connecting unit 130. The substrate transport unit 100 has a drive unit (not shown).

  The substrate 200 is mounted on the tray 111 and the tray 112. The wheels 120 are attached to the tray 111 and the tray 112 and roll on the pair of guide rails 30. The connecting portion 130 is a hinge-like mechanism that rotatably connects the tray 111 and the tray 112.

  Further, since the rail width of the pair of guide rails 30 is narrow in the chamber 40, the substrate transport unit 100 traveling on the pair of guide rails 30 bends with the connecting portion 130 as a base point. As a result, as shown in FIG. 1, the board transporting portion 100 changes to a mountain shape with the connecting portion 130 at the apex in the narrow rail width portion.

  On the other hand, since the rail width is wide at the positions of the inlet 30in and the outlet 30out, the substrate transport unit 100 is held in a flat plate shape instead of a mountain shape. That is, when the substrate transport unit 100 passes through the inlet 30in and the outlet 30out, the substrate transport unit 100 is held in a flat plate shape, and consideration is given to reducing the opening areas of the inlet 30in and the outlet 30out.

(2) Structure of Solar Cell FIG. 2 is a schematic diagram showing an example of a cross-sectional structure of the solar cell 300 according to this embodiment. As shown in FIG. 2, the solar cell 300 includes a substrate 200 and a transparent conductive film 220. The solar cell 300 includes electrodes (not shown) on the surface of the transparent conductive film 220 and the surface of the n-type semiconductor substrate 211.

  The substrate 200 includes an n-type semiconductor substrate 211, an i-type semiconductor layer 212, and a p-type semiconductor layer 213. The n-type semiconductor substrate 211 is formed of n-type single crystal silicon or the like. The i-type semiconductor layer 212 is formed of i-type amorphous silicon or the like. The p-type semiconductor layer 213 is made of p-type amorphous silicon or the like.

  The transparent conductive film 220 is made of a light-transmitting conductive oxide such as indium tin oxide (ITO). As described above, the surface of the substrate 200 (n-type semiconductor substrate 211) has a geometrical unevenness, specifically, a pyramid (square pyramid) shape formed by a plurality of convex portions 210 (see FIG. 4). Unevenness is formed.

(3) Positional Relationship Between Substrate Transporter 100 and Deposition Source 20 FIG. 3 shows a positional relationship between the substrate transporter 100 and the deposition source 20 in the chamber 40. 3 is a side view of the vapor deposition source 20, specifically, a side view of the substrate transport unit 100 and the vapor deposition source 20 from the downstream side in the transport direction of the substrate 200 (arrow AR1 in FIG. 1).

  As shown in FIG. 3, the substrate transport unit 100 having the wheels 120 is disposed from the downstream side in the transport direction when passing along the pair of guide rails 30 in the chamber 40, specifically, above the deposition source 20. When 20 is viewed, the shape changes to a mountain shape with the connecting portion 130 as a vertex.

  The tray 111 holds the substrate 200 that passes through the vapor deposition material supply unit 21 and is located in a region A1 that is divided with reference to the center line CL along the vertical direction (direction DR2). Similarly, the tray 112 holds the substrate 200 positioned in the other region A2 that is divided with the center line CL as a reference. That is, in the present embodiment, the substrate 200 is positioned in each of the region A1 and the region A2 with respect to the center line CL. In the present embodiment, the tray 111 constitutes a first holding unit, and the tray 112 constitutes a second holding unit.

  The connecting portion 130 rotatably connects the inner portion 111in of the tray 111 and the inner portion 112in of the tray 112. Specifically, the connecting portion 130 includes an end portion 200b which is an outer end of the substrate 200 held on the tray 111, an angle θ1 formed by an orthogonal line L1 orthogonal to the center line CL, and a substrate held on the tray 112. The inner portion 111in and the inner portion 112in are coupled so that the angle θ2 formed by the end portion 200b of the 200 and the orthogonal line L1 can be changed.

  As described above, in this embodiment, the position (angle) of the substrate 200 with respect to the vapor deposition source 20 is determined using the substrate transport unit 100 including the tray 111, the tray 112, and the connecting unit 130. In the present embodiment, the substrate transport unit 100 constitutes a substrate holding mechanism.

  More specifically, the substrate transport unit 100, when viewed from the downstream side in the transport direction of the substrate 200, and the end 200a (one end) of the substrate 200 positioned just above the deposition source 20 and the vapor deposition. The distance d1 (first distance) from the material supply unit 21 and the distance d2 (second distance) between the end 200b (other end) of the substrate 200 and the vapor deposition material supply unit 21 are substantially the same. 200 is placed in an inclined state. The distance d1 and the distance d2 are not necessarily completely the same, and the distance d1 and the distance d2 are taken into consideration so that the vapor deposition material 25 supplied from the vapor deposition source 20 is deposited on the surface of the substrate 200 as uniformly as possible. What is necessary is just to determine.

  In the present embodiment, the length a of one side of the substrate 200 is 90 to 140 mm. For such a substrate 200, the distance d1 and the distance d2 are set to 450 to 600 mm. Further, the angle θ1 and the angle θ2 are set to 2.5 to 12.5 °.

(4) Positional relationship between the surface of the substrate 200 and the vapor deposition source 20 FIGS. 4A and 4B show the positional relationship between the surface of the substrate 200 on which the convex portions 210 are formed and the vapor deposition source 20. Specifically, FIG. 4A shows a positional relationship when the substrate 200 is tilted using the substrate transport unit 100 described above. On the other hand, FIG. 4B shows the positional relationship when the substrate 200 is leveled without being tilted.

  As shown in FIGS. 4A and 4B, a plurality of convex portions 210 are formed on the surface of the substrate 200. Each of the convex portions 210 includes a facing surface 210a and a non-facing surface 210b. The facing surface 210a is a surface where an angle α1 on the vapor deposition source 20 side with a straight line L2 (supply straight line) that is a straight line extending from the vapor deposition material supply unit 21 is a predetermined angle. The non-facing surface 210b is a surface that is located on the opposite side of the facing surface 210a, and an angle α2 on the vapor deposition source 20 side with the straight line L2 is an angle smaller than the angle α1.

  That is, the facing surface 210a is positioned so as to face the straight line L2 extending from the vapor deposition material supply unit 21 more than the non-facing surface 210b. The non-facing surface 210b is positioned so as to be inclined with respect to the straight line L2 with respect to the facing surface 210a.

  In the present embodiment, as shown in FIG. 4A, the substrate 200 is tilted and positioned. Specifically, the substrate 200 is positioned so that the straight line L2 enters the substrate 200 through the non-facing surface 210b when the vapor deposition source 20 is viewed from the side. That is, in FIG. 4A, the substrate 200 is positioned so that the straight line L2 is incident from the surface side of the substrate 200 and the angle α2 is 0 ° or more.

  On the other hand, as shown in FIG. 4B, when the substrate 200 is positioned horizontally without being tilted, the angle at which the straight line L2 becomes the non-facing surface 210b becomes the angle α3 in the non-facing surface 210b. It cannot enter from the surface side. For this reason, compared with the opposing surface 210a, the vapor deposition material 25 is difficult to deposit on the non-facing surface 210b, and the film thickness of the transparent conductive film 220 tends to be non-uniform.

(5) Manufacturing Method of Solar Cell Using Film Forming Apparatus 10 FIG. 5 shows a manufacturing flow of a solar battery 300 using the film forming apparatus 10. As shown in FIG. 5, in step S <b> 10, the substrate 200 is set on the tray 111 and the tray 112. Specifically, the substrate 200 is mounted in openings (not shown) formed in the tray 111 and the tray 112, and the substrate 200 is held by the tray.

  In step S <b> 20, the substrate 200 set on the tray 111 and the tray 112 is transferred into the chamber 40. Specifically, the substrate transport unit 100 travels on the pair of guide rails 30 and the substrate 200 is transported into the chamber 40.

  In step S30, the angle (position) of the substrate 200 with respect to the vapor deposition source 20 is set. Specifically, the substrate transport unit 100 traveling on the pair of guide rails 30 is bent with the connecting unit 130 as a base point, and the substrate 200 is held in an inclined state. In this embodiment, step S30 constitutes a positioning step.

  By the operation of step S30, the substrate 200 is tilted so that the distance d1 and the distance d2 (see FIG. 2) are substantially the same.

  In step S40, the substrate transport unit 100 transports the positioned substrate 200 and passes above the vapor deposition source 20 at a predetermined speed. In the present embodiment, step S40 constitutes a substrate transfer step.

  In step S <b> 50, the deposition material 25 supplied from the deposition source 20 is deposited on the substrate 200. Specifically, the substrate transport unit 100 passes over the vapor deposition source 20 at a predetermined speed in the chamber 40 to which the vapor deposition material 25 is sequentially supplied, so that the vapor deposition material 25 is deposited on the substrate 200 and is transparent. A conductive film 220 is formed. In the present embodiment, step S50 constitutes a vapor deposition step.

  In step S60, the angle (position) of the substrate 200 with respect to the vapor deposition source 20 is reset. Specifically, the substrate transport unit 100 returns to a flat plate shape from the bent state with the connecting unit 130 as a base point.

  In step S <b> 70, the substrate 200 is transferred out of the chamber 40. Specifically, the substrate transport unit 100 travels on the pair of guide rails 30 and the substrate 200 is transported outside the chamber 40.

  Finger electrodes and the like are formed on the substrate 200 conveyed outside the chamber 40, and the solar cell 300 is manufactured.

(6) Example Next, the Example of the board | substrate 200 manufactured using the film-forming apparatus 10 mentioned above is described. The substrate 200 according to the embodiment has the structure shown in FIG. In the example, an n-type semiconductor substrate 211 (n-type single crystal silicon substrate) having a resistivity of about 1 Ω · cm and a thickness of about 300 μm was used. The n-type single crystal silicon substrate was subjected to surface cleaning and texturing, and a plurality of pyramidal protrusions having a height of several μm to several tens of μm were provided on the substrate surface to form irregularities.

  On one side of such an n-type semiconductor substrate 211, it is composed of an i-type semiconductor layer 212 composed of a substantially intrinsic i-type amorphous silicon layer of about 5 nm and a p-type amorphous silicon layer of about 5 nm. The p-type semiconductor layer 213 to be formed was formed by plasma CVD. Table 1 shows plasma formation conditions and the like.

Next, ITO was vapor-deposited on the surface of the p-type semiconductor layer 213 in a state where the substrate 200 was inclined using the substrate transport unit 100 in an Ar, O ₂ atmosphere, and the transparent conductive film 220 was formed at room temperature. In the example, the plurality of substrates 200 were manufactured by changing the angle θ1 (angle θ2) of the tray 111 (tray 112) of the substrate transport unit 100. Note that the size (length a) of the substrate 200 and the positional relationship (distance d1 and distance d2) between the substrate 200 and the vapor deposition source 20 were within the above-described ranges.

  FIG. 6 is a graph showing the relationship between the sheet resistance of the transparent conductive film 220 and the angle θ1 (angle θ2) of the tray 111 (tray 112) of the substrate transport unit 100. As shown in FIG. 6, when the angle θ1 is in the range of 2.5 to 12.5 °, the sheet resistance of the transparent conductive film 220 is more than when the angle θ1 is 0 ° (horizontal) or 15.0 °. Is 10% or more smaller.

  That is, in the case of the size (length a) of the substrate 200 and the positional relationship (distance d1 and distance d2) between the substrate 200 and the evaporation source 20, the angle θ1 (angle θ2) is 2.5 to 12. It is necessary to set to 5 °.

(7) Action / Effect According to the film forming method described above, the substrate transport unit 100 positions the substrate 200 so that the straight line L2 enters the substrate 200 via the non-facing surface 210b. That is, as shown in FIG. 4A, the substrate 200 is positioned so that the straight line L2 is incident from the surface side of the substrate 200 and the angle α2 is 0 ° or more. Specifically, the substrate 200 is positioned in an inclined state so that the distance d1 and the distance d2 (see FIG. 2) are substantially the same.

  For this reason, the difference in the amount of the vapor deposition material 25 deposited on the facing surface 210a and the non-facing surface 210b is reduced. That is, the film thickness of the transparent conductive film 220 formed on the surface of the substrate 200 is uniform.

  That is, according to such a film forming method, even when a texture is formed on the surface of the substrate 200, the film thickness formed on the surface of the transparent conductive film 220 or the like can be made more uniform.

  In the above-described embodiment, as shown in FIG. 2, the substrate 200 is positioned in each of the region A1 and the region A2 that are segmented with the center line CL as a reference. Further, in order to realize such an arrangement, the substrate transport unit 100 including the connecting unit 130 that rotatably connects the tray 111 and the tray 112 is used. For this reason, before and after vapor deposition of the vapor deposition material 25 on the substrate 200, the substrate 200 can be held horizontally by making the substrate transport unit 100 flat, so that the other steps are not affected. Can be. That is, even if the film forming apparatus 10 is used, the film thickness of the transparent conductive film 220 can be made uniform without adversely affecting the productivity of the substrate 200.

(8) Other Embodiments As described above, the contents of the present invention have been disclosed through the embodiments of the present invention. However, it is understood that the description and drawings constituting a part of this disclosure limit the present invention. Should not. From this disclosure, various alternative embodiments, examples, and operational techniques will be apparent to those skilled in the art.

  For example, the embodiment of the present invention can be modified as follows. FIGS. 7A and 7B show a substrate transfer unit according to a modified example of the present invention. Compared with the substrate transport unit 100 described above, the substrate transport unit 100A shown in FIG. That is, the tilt angle of the substrate 200 is fixed, but the film thickness of the transparent conductive film 220 can be made uniform even when the substrate transport unit 100A is used.

  The substrate transport unit 100B illustrated in FIG. 7B is provided only on the region A1 side as compared with the substrate transport unit 100. Although the number of substrates 200 that can be handled at one time is limited in the substrate transport unit 100B, the film thickness of the transparent conductive film 220 can be made uniform even when the substrate transport unit 100B is used.

  Further, the substrate transport unit 100A and the substrate transport unit 100B do not necessarily have the wheels 120. Further, the pair of guide rails 30 are not necessarily required. That is, the substrate 200 is tilted, and the tilted substrate 200 may be held above the vapor deposition source 20 and is not necessarily an in-line film forming apparatus.

  Furthermore, the present invention can be applied to the formation of a film using a PVD method such as a resistance heating vapor deposition method, an electron beam vapor deposition method, a molecular beam epitaxy method, a sputtering method, or an ion plating method.

  As described above, the present invention naturally includes various embodiments that are not described herein. Therefore, the technical scope of the present invention is determined only by the invention specifying matters according to the scope of claims reasonable from the above description.

DESCRIPTION OF SYMBOLS 10 ... Film-forming apparatus, 20 ... Deposition source, 21 ... Deposition material supply part, 25 ... Deposition material, 30 ... Guide rail, 30in ... Inlet, 30out ... Outlet, 40 ... Chamber, 100, 100A, 100B ... Substrate conveyance part, 111, 112 ... tray, 111in, 112in ... inner part, 120 ... wheel, 130 ... connecting part, 200 ... substrate, 200a, 200b ... end, 210 ... convex part, 210a ... facing surface, 210b ... non-facing surface, 211 ... n-type semiconductor substrate, 212 ... i-type semiconductor layer, 213 ... p-type semiconductor layer, 220 ... transparent conductive film, 300 ... solar cell

Claims (6)

The deposition material supplied from the deposition source is deposited on the substrate on which the geometrical irregularities by the plurality of convex portions are formed,
In the lateral view of any one of the vapor deposition sources, the concavity and convexity are opposite to each other so that the angle on the vapor deposition source side with a supply straight line that is a straight line extending from the vapor deposition material supply unit of the vapor deposition source, and the supply A non-facing surface having an angle smaller than the predetermined angle with the angle on the deposition source side with a straight line,
A film forming method for forming a film on the surface of the substrate,
A positioning step of positioning the substrate so that the supply straight line enters the substrate through the non-opposing surface in the side view;
A deposition method comprising: a deposition step of supplying the deposition material from the deposition source to the substrate positioned in the positioning step and depositing the deposition material on a surface of the substrate.   In the positioning step, in the side view, a first distance between the one end of the substrate and the vapor deposition material supply unit located immediately above the vapor deposition source, and the other end of the substrate and the vapor deposition material supply unit The film forming method according to claim 1, wherein the substrate is positioned in an inclined state so that the second distance is substantially the same. A substrate transporting step of transporting the substrate positioned in the positioning step and passing above the deposition source supplying the deposition material;
The film forming method according to claim 2, wherein in the positioning step, the substrate is positioned so that the first distance and the second distance are substantially the same when the vapor deposition source is viewed from the downstream side in the transport direction. .   In the positioning step, in the lateral view, one region that passes through the vapor deposition material supply unit and is divided with reference to a center line along the vertical direction, and the other region that is divided with reference to the center line. The film forming method according to claim 1, wherein the substrate is positioned on each of the first and second substrates. In the positioning step,
A first holding unit for holding the substrate located in the one region;
A second holding unit for holding the substrate located in the other region;
In the side view, an angle formed between an outer end of the substrate held by the first holding unit and an orthogonal line orthogonal to the center line, and an outer end of the substrate held by the second holding unit The position of the substrate is determined using a substrate holding mechanism including a connecting portion that connects the inner portion of the first holding portion and the inner portion of the second holding portion so that the angle formed by the orthogonal line can be changed. The film forming method according to claim 4. The deposition material supplied from the deposition source is deposited on the substrate on which the geometrical irregularities by the plurality of convex portions are formed,
In the lateral view of any one of the vapor deposition sources, the concavity and convexity are opposite to each other so that the angle on the vapor deposition source side with a supply straight line that is a straight line extending from the vapor deposition material supply unit of the vapor deposition source, and the supply A method of manufacturing a solar cell, including a non-facing surface in which an angle on the vapor deposition source side with a straight line is smaller than the predetermined angle,
A positioning step of positioning the substrate so that the supply straight line enters the substrate through the non-opposing surface in the side view;
A vapor deposition step of supplying the vapor deposition material from the vapor deposition source to the substrate positioned in the positioning step, depositing the vapor deposition material on the surface of the substrate, and forming a film on the surface of the substrate. A method for manufacturing a solar cell.

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