JP2011108446A - 導電粒子及びその製造方法 - Google Patents
導電粒子及びその製造方法 Download PDFInfo
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- JP2011108446A JP2011108446A JP2009261048A JP2009261048A JP2011108446A JP 2011108446 A JP2011108446 A JP 2011108446A JP 2009261048 A JP2009261048 A JP 2009261048A JP 2009261048 A JP2009261048 A JP 2009261048A JP 2011108446 A JP2011108446 A JP 2011108446A
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Abstract
【解決手段】プラスチック核体と、該プラスチック核体を覆う高分子電解質層と、該高分子電解質層を介してプラスチック核体に吸着した金属粒子と、該金属粒子を覆うようにプラスチック核体の周囲に形成された無電解金属めっき層と、を備える導電粒子5。
【選択図】図1
Description
架橋度を調整した、ジビニルベンゼンとアクリル酸との共重合体からなる平均粒径3.7μmのプラスチック核体を準備した。このプラスチック核体の表面にはアクリル酸に由来するカルボキシル基がある。プラスチック核体の200℃における粒子直径が20%変位したときの圧縮弾性率(20%K値)は、150kgf/mm2であった。
平均粒子径40nmのパラジウム粒子の分散液をイソプロピルアルコールで希釈して、1質量%のパラジウム粒子分散液(パラジウム総量:0.24g)を作製した。これ以外は実施例1と同様にして、パラジウム粒子を覆う無電解パラジウムめっき層を有する導電粒子を作製した。
無電解パラジウムめっき層に代えて、無電解ニッケルめっき層(厚さ30nm)を形成させたことの他は実施例2と同様にして、パラジウム粒子を覆う無電解ニッケルめっき層を有する導電粒子を作製した。
無電解ニッケルめっき層を形成させた後、置換型パラジウムめっきを施してパラジウムめっき層(厚さ15nm)を更に形成させたこと以外は実施例3と同様にして、パラジウム粒子を覆う無電解ニッケルめっき層及びパラジウムめっき層を有する導電粒子を作製した。
イオン型パラジウム触媒であるアトテックネネオガント834(アトテックジャパン株式会社製:商品名)を8重量%含有するパラジウム触媒化液100mLに実施例1と同様のプラスチック核体10gを添加し、30℃で30分攪拌した。その後、φ3μmのメンブレンフィルタ(ミリポア社製)で濾過し、水洗を行って、パラジウム触媒が付着したプラスチック核体を得た。このプラスチック核体を、pH6.0に調整された0.5質量%のジメチルアミンボラン水溶液に添加して、その表面を活性化させた。
平均粒子径20nmのパラジウム粒子の分散液をイソプロピルアルコールで希釈して、0.5重量%のパラジウム粒子分散液(パラジウム総量:0.12g)を得た。このパラジウム粒子分散液にブタンチオールを48mg加えることにより、パラジウム粒子表面にブチル基を導入した。その後、パラジウム粒子分散液に、実施例1と同様のプラスチック核体を入れて、プラスチック核体表面にパラジウム粒子を吸着させた。
フェノキシ樹脂(ユニオンカーバイド社製商品名、PKHC)100gと、アクリルゴム(ブチルアクリレート40重量部、エチルアクリレート30重量部、アクリロニトリル30重量部、グリシジルメタクリレート重量3部の共重合体、分子量:85万)75gとを酢酸エチル300gに溶解し、30質量%溶液を得た。次いで、マイクロカプセル型潜在性硬化剤を含有する液状エポキシ樹脂(エボキシ当量185、旭化成エポキシ株式会社製、ノバキュアHX−3941)300gをこの溶液に加え、撹拌して、接着剤溶液を作製した。
上記で作製した各接続体の絶縁抵抗試験及び導通抵抗試験を行った。異方導電接着フィルムは、チップ電極間の絶縁抵抗が高く、チップ電極/ガラス電極間の導通抵抗が低いことが重要である。チップ電極間の絶縁抵抗は10サンプルを測定した。絶縁抵抗は、初期値と信頼性試験(気温60℃、湿度90%、20V印加の条件で1000時間放置)の前後において測定した。絶縁抵抗が109(Ω)よりも大きいものを良品と判定した場合の歩留まりを算出した。チップ電極/ガラス電極間の導通抵抗に関しては14サンプルの平均値を測定した。導通抵抗は初期値と吸湿試験(気温85℃、湿度85%の条件で1000時間放置)後の値を測定した。測定結果を表1に示す。
Claims (10)
- プラスチック核体と、
該プラスチック核体を覆う高分子電解質層と、
該高分子電解質層を介して前記プラスチック核体に吸着した金属粒子と、
該金属粒子を覆うように前記プラスチック核体の周囲に形成された無電解金属めっき層と、
を備える導電粒子。 - 前記高分子電解質層がポリアミンを含む、請求項1に記載の導電粒子。
- 前記ポリアミンがポリエチレンイミンである、請求項2に記載の導電粒子。
- 前記金属粒子がパラジウム粒子であり、前記無電解金属めっき層が無電解パラジウムめっき層を含む、請求項1〜3のいずれか一項に記載の導電粒子。
- 前記無電解金属めっき層の表面に吸着した絶縁粒子を更に備える、請求項1〜4のいずれか一項に記載の導電粒子。
- プラスチック核体を覆う高分子電解質層を形成する工程と、
前記高分子電解質層を介して前記プラスチック核体に金属粒子を吸着させる工程と、
前記金属粒子を触媒として、前記金属粒子を覆うように前記プラスチック核体の周囲に無電解金属めっき層を形成する工程と、
を備える導電粒子の製造方法。 - 前記高分子電解質層がポリアミンを含む、請求項6に記載の製造方法。
- 前記ポリアミンがポリエチレンイミンである、請求項7に記載の製造方法
- 前記金属粒子がパラジウム粒子であり、前記無電解金属めっき層が無電解パラジウムめっき層を含む、請求項6〜8のいずれか一項に記載の製造方法。
- 無電解金属めっき層の表面に絶縁粒子を吸着させる工程を更に備える、請求項6〜9のいずれか一項に記載の製造方法。
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