JP2011100892A5

JP2011100892A5 -

Info

Publication number: JP2011100892A5
Application number: JP2009255235A
Authority: JP
Filing date: 2009-11-06
Publication date: 2012-12-13

Claims

A hybrid type detection device comprising a light receiving element array in which a plurality of light receiving elements are arranged in a compound semiconductor having light receiving sensitivity in the near infrared region, and a readout circuit for reading out photoelectric charges for each light receiving element
In the electrode of the light receiving element and / or the readout electrode of the readout circuit, the recess has an average vertical distance of 100 nm or more between the bottom of the recess and the top which is the surface of the electrode other than the recess. It is formed over the surface of the electrode, and the recess is attached by etching,
Characterized in that the recess by junction bumps, are partially or completely filled, the detection device.

The light receiving element array includes an InP substrate and a light receiving layer formed on the InP substrate and having a band gap wavelength of 1.65 μm to 3.0 μm. The light receiving layer is of a type (GaAsSb / InGaAs). 2 or a type 2 multiple quantum well structure of any one of (GaAsSb / InGaAsN), (GaAsSb / InGaAsNP), and (GaAsSb / InGaAsNSb), and the light receiving layer is Lattice matching condition with InP substrate, | Δa / a | ≦ 0.002 (where Δa = ai−a, where ai is the lattice constant of each layer in the light receiving layer and a is the lattice constant of the InP substrate) The detection device according to claim 1 , wherein:

The light receiving element array includes an InP substrate and a light receiving layer formed on the InP substrate and having a band gap wavelength of 1.65 μm to 3.0 μm. The light receiving layer includes InGaAs, InGaAsN, InGaAsNP, and Any of InGaAsNSb, and its light receiving layer has a lattice matching condition with the InP substrate, | Δa / a | ≦ 0.002 (where ai is the lattice constant of the light receiving layer and a is the lattice constant of the InP substrate) , and satisfies the Δa = ai-a, a), detection apparatus according to claim 1.

A light receiving element array in which a plurality of light receiving elements are arranged on a compound semiconductor having light receiving sensitivity in the near infrared region,
The light receiving element has a pn junction formed by selectively diffusing a p-type impurity from a surface layer of the compound semiconductor epitaxial stacked body, and is separated by a non-diffusion region,
A p-side electrode in ohmic contact with the p-type region in which the p-type impurity is selectively diffused is provided for each light receiving element;
The p-side electrode has a recess formed over the surface of the electrode such that the average vertical distance between the bottom of the recess and the top of the electrode other than the recess is 100 nm, and The light receiving element array, wherein the concave portion is formed by etching.

The light receiving element array according to claim 4 , wherein a bonding bump is provided for each p-side electrode, and the concave portion is partially or entirely filled with the bonding bump.

An electronic device having an electrode bonded to a bonding bump,
In the electrode, a recess is formed over the surface of the electrode such that an average vertical distance between the bottom of the recess and the top which is the surface of the electrode other than the recess is 100 nm or more, and the recess An electronic device characterized in that is attached by etching.

A composite electronic device comprising a first semiconductor chip and a second semiconductor chip, wherein the electrodes of the first semiconductor chip and the electrodes of the second semiconductor chip are joined by joint bumps,
In the electrode of the first semiconductor chip and / or the electrode of the second semiconductor chip, the average vertical distance between the bottom of the recess and the top which is the surface of the electrode other than the recess is 100 nm or more And is formed over the surface of the electrode, and the concave portion is attached by etching,
The composite electronic device, wherein the concave portion is partially or entirely filled with the bonding bump.

The said recessed part is formed so that the average pitch of the said bottom part and a bottom part may be 300 nm or less, or the average pitch of the said top part and a top part is 300 nm or less, The any one of Claims 1-3 characterized by the above-mentioned. The detection device according to claim 1, the light receiving element array according to claim 4 or 5, the electronic device according to claim 6, or the composite electronic device according to claim 7 .

A method for manufacturing an electronic device having an electrode bonded to a bonding bump,
An original plate production process for producing an original plate with an uneven pattern for forming a resist pattern by an electron beam exposure method;
Applying a resist film to the electrodes of the electronic device;
Pressing the concave / convex pattern of the original plate onto the resist film on the electrode to form the resist pattern;
And a step of forming a recess in the electrode provided with the resist pattern by etching.

A method of manufacturing a composite electronic device comprising a first semiconductor chip and a second semiconductor chip, wherein the electrodes of the first semiconductor chip and the electrodes of the second semiconductor chip are joined by joint bumps. And
An original plate production process for producing an original plate with an uneven pattern for forming a resist pattern by an electron beam exposure method;
Applying a resist film to the surface of the electrode of the first semiconductor chip and / or the electrode of the second semiconductor chip;
Pressing the concave / convex pattern of the original plate onto the resist film on the electrode to form the resist pattern;
Forming a recess in the electrode to which the resist pattern is attached by etching;
Providing bonding bumps on the electrodes of the first semiconductor chip and / or the electrodes of the second semiconductor chip;
A method of manufacturing a composite electronic device, wherein the electrodes of the first semiconductor chip and the electrodes of the second semiconductor chip are conductively connected through the bonding bumps.

Manufacturing method of hybrid type detection device in which light receiving element array in which a plurality of light receiving elements are arranged in compound semiconductor having light receiving sensitivity in near infrared region, and readout circuit for reading out photoelectric charge for each light receiving element are joined by joint bump Because
An original plate production process for producing an original plate with an uneven pattern for forming a resist pattern by an electron beam exposure method;
Applying a resist film to the surfaces of the electrodes of the light receiving element array and / or the readout electrodes of the readout circuit;
Pressing the concave / convex pattern of the original plate onto the resist film on the electrode to form the resist pattern;
Forming a recess in the electrode to which the resist pattern is attached by etching;
Providing bonding bumps on the electrodes of the light receiving element array and / or the readout electrodes of the readout circuit;
A method for manufacturing a detection device, wherein the electrodes of the light receiving element array and the readout electrodes of the readout circuit are conductively connected via the bonding bumps.

A method of manufacturing a light receiving element array in which a plurality of light receiving elements are arranged in a compound semiconductor having light receiving sensitivity in the near infrared region,
An original plate production process for producing an original plate with an uneven pattern for forming a resist pattern by an electron beam exposure method;
Forming a p-type impurity by selectively diffusing p-type impurities from the surface layer of the compound semiconductor epitaxial stack for each of the light receiving elements so as to be separated by a non-diffusion region;
Forming a p-side electrode in ohmic contact with the p-type region in which the p-type impurity is selectively diffused;
Applying a resist film to the surface of the p-side electrode;
Pressing the concave / convex pattern of the original plate onto the resist film on the p-side electrode to form the resist pattern;
Forming a recess by etching on the p-side electrode provided with the resist pattern. A method for manufacturing a light-receiving element array.

After forming the resist pattern by pressing the concave / convex pattern of the original plate on the resist film, before forming the concave portion by the etching, the resist pattern is formed so that the electrode is exposed at the bottom of the concave portion of the resist pattern. The method for manufacturing an electronic device according to claim 9, the method for manufacturing a composite electronic device according to claim 10, and the method for manufacturing a detection device according to claim 11, further comprising a step of etching in a limited manner. The method or the manufacturing method of the light receiving element array of Claim 12.