JP2011100719A5 - - Google Patents
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- JP2011100719A5 JP2011100719A5 JP2010210149A JP2010210149A JP2011100719A5 JP 2011100719 A5 JP2011100719 A5 JP 2011100719A5 JP 2010210149 A JP2010210149 A JP 2010210149A JP 2010210149 A JP2010210149 A JP 2010210149A JP 2011100719 A5 JP2011100719 A5 JP 2011100719A5
- Authority
- JP
- Japan
- Prior art keywords
- silver alloy
- organic
- alloy target
- electrode film
- reflective electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910001316 Ag alloy Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005097 cold rolling Methods 0.000 claims description 3
- 238000005242 forging Methods 0.000 claims description 3
- 238000005755 formation reaction Methods 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 238000009721 upset forging Methods 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Description
本発明者らは、特定の製造方法により、有機ＥＬ素子の反射電極膜形成用銀合金ターゲットの結晶粒の平均粒径を１５０〜４００μｍとすることにより、大電力が投入されてもスプラッシュを抑制することができることを見出した。具体的には、本発明は以下の構成を有することによって上記問題を解決した有機ＥＬ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法に関する。
（１）Ｉｎ：０．１〜１．５質量％を含み、残部がＡｇおよび不可避不純物からなる成分組成を有した銀合金ターゲットであって、該合金の結晶粒の平均粒径が、１５０〜４００μｍであり、前記結晶粒の粒径のばらつきが、平均粒径の２０％以下であることを特徴とする、有機ＥＬ素子の反射電極膜形成用銀合金ターゲット。
（２）ターゲット表面が、０．２５ｍ２以上の面積を有していることを特徴とする、上記（１）記載の有機ＥＬ素子の反射電極膜形成用銀合金ターゲット。
（３）Ｉｎ：０．１〜１．５質量％を含み、残部がＡｇおよび不可避不純物からなる成分組成を有した溶解鋳造インゴットを、熱間の据込鍛造を６〜２０回繰り返す工程、冷間圧延する工程、熱処理する工程、機械加工する工程を、この順で行い、前記熱間の据込鍛造の温度が、８５０℃以下であり、前記冷間圧延での総圧下率が、６０〜７５％であり、前記熱処理の温度が、５５０〜６５０℃であることを特徴とする、有機ＥＬ素子の反射電極膜形成用銀合金ターゲットの製造方法。
（４）熱間の据込鍛造の温度が、７５０〜８５０℃である、上記（３）記載の有機ＥＬ素子の反射電極膜形成用銀合金ターゲットの製造方法。
The present inventors suppress the splash even when a large amount of electric power is applied by setting the average grain size of the silver alloy target for forming the reflective electrode film of the organic EL element to 150 to 400 μm by a specific manufacturing method. Found that you can. Specifically, the present invention relates to a silver alloy target for forming a reflective electrode film of an organic EL element which has solved the above problems by having the following configuration, and a method for producing the same.
(1) In: a silver alloy target containing 0.1 to 1.5% by mass with the balance being composed of Ag and inevitable impurities, wherein the average grain size of the alloy is 150 to A silver alloy target for forming a reflective electrode film of an organic EL device, wherein the silver particle target is 400 μm, and the variation in grain size of the crystal grains is 20% or less of the average grain size.
(2) The silver alloy target for forming a reflective electrode film of an organic EL element according to (1) above, wherein the target surface has an area of 0.25 m 2 or more.
(3) A step of repeating hot upsetting forging 6 to 20 times for a molten cast ingot containing In: 0.1 to 1.5% by mass, the balance being composed of Ag and inevitable impurities, the step of during rolling, heat treating, the step of machining, are performed by the this order, the temperature of upsetting forging between said heat is at 850 ° C. or less, the total rolling reduction in the cold rolling, 60 It is -75%, The temperature of the said heat processing is 550-650 degreeC , The manufacturing method of the silver alloy target for reflective electrode film formation of an organic EL element characterized by the above-mentioned .
(4) The manufacturing method of the silver alloy target for reflective electrode film formation of the organic EL element of the said (3) description whose temperature of hot upset forging is 750-850 degreeC.
Claims (4)
該合金の結晶粒の平均粒径が、１５０〜４００μｍであり、
前記結晶粒の粒径のばらつきが、平均粒径の２０％以下であることを特徴とする、有機ＥＬ素子の反射電極膜形成用銀合金ターゲット。 In: a silver alloy target having a component composition including 0.1 to 1.5% by mass and the balance of Ag and inevitable impurities,
The average grain size of the crystal grains of the alloy is 150 to 400 μm,
The silver alloy target for forming a reflective electrode film of an organic EL element, wherein the variation in grain size of the crystal grains is 20% or less of the average grain size.
前記熱間の据込鍛造の温度が、８５０℃以下であり、
前記冷間圧延での総圧下率が、６０〜７５％であり、
前記熱処理の温度が、５５０〜６５０℃であることを特徴とする、有機ＥＬ素子の反射電極膜形成用銀合金ターゲットの製造方法。 In: a step of repeating hot upsetting forging 6 to 20 times, cold-rolling a molten cast ingot containing 0.1 to 1.5% by mass and the balance being composed of Ag and inevitable impurities. step, a step of heat treatment, the step of machining, are performed by the this order,
The hot upset forging temperature is 850 ° C. or less,
The total rolling reduction in the cold rolling is 60 to 75%,
The method for producing a silver alloy target for forming a reflective electrode film of an organic EL element, wherein the temperature of the heat treatment is 550 to 650 ° C.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010210149A JP4793502B2 (en) | 2009-10-06 | 2010-09-17 | Silver alloy target for forming reflective electrode film of organic EL element and method for producing the same |
| US13/500,224 US8821769B2 (en) | 2009-10-06 | 2010-10-05 | Silver alloy target for forming reflection electrode film for organic EL element, and method for manufacturing the silver alloy target |
| PCT/JP2010/067817 WO2011043486A1 (en) | 2009-10-06 | 2010-10-05 | Silver alloy target for forming reflection electrode film for organic el element, and method for manufacturing the silver alloy target |
| CN2010800200309A CN102421931B (en) | 2009-10-06 | 2010-10-05 | Silver alloy target for forming reflection electrode film for organic EL element, and method for manufacturing silver alloy target |
| EP10822155.7A EP2487274B1 (en) | 2009-10-06 | 2010-10-05 | Silver alloy target for forming reflection electrode film for organic el element, and method for manufacturing the silver alloy target |
| KR1020117022697A KR101099415B1 (en) | 2009-10-06 | 2010-10-05 | Silver alloy target for forming reflection electrode film for organic el element, and method for manufacturing the silver alloy target |
| TW099134036A TWI385263B (en) | 2009-10-06 | 2010-10-06 | Silver alloy target for forming reflective electrode film for organic electroluminescent element and manufacturing method thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009232634 | 2009-10-06 | ||
| JP2009232634 | 2009-10-06 | ||
| JP2010210149A JP4793502B2 (en) | 2009-10-06 | 2010-09-17 | Silver alloy target for forming reflective electrode film of organic EL element and method for producing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011100719A JP2011100719A (en) | 2011-05-19 |
| JP2011100719A5 true JP2011100719A5 (en) | 2011-07-14 |
| JP4793502B2 JP4793502B2 (en) | 2011-10-12 |
Family
ID=43856934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010210149A Active JP4793502B2 (en) | 2009-10-06 | 2010-09-17 | Silver alloy target for forming reflective electrode film of organic EL element and method for producing the same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8821769B2 (en) |
| EP (1) | EP2487274B1 (en) |
| JP (1) | JP4793502B2 (en) |
| KR (1) | KR101099415B1 (en) |
| CN (1) | CN102421931B (en) |
| TW (1) | TWI385263B (en) |
| WO (1) | WO2011043486A1 (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5533545B2 (en) * | 2010-01-12 | 2014-06-25 | 三菱マテリアル株式会社 | Silver alloy target for forming reflective electrode film of organic EL element and method for producing the same |
| JP5806653B2 (en) * | 2011-12-27 | 2015-11-10 | 株式会社神戸製鋼所 | Ag alloy film for reflective electrode, reflective electrode, and Ag alloy sputtering target |
| JP5159962B1 (en) | 2012-01-10 | 2013-03-13 | 三菱マテリアル株式会社 | Silver alloy sputtering target for forming conductive film and method for producing the same |
| JP5472353B2 (en) * | 2012-03-27 | 2014-04-16 | 三菱マテリアル株式会社 | Silver-based cylindrical target and manufacturing method thereof |
| DE102012006718B3 (en) * | 2012-04-04 | 2013-07-18 | Heraeus Materials Technology Gmbh & Co. Kg | Planar or tubular sputtering target and method of making the same |
| JP5928218B2 (en) * | 2012-07-20 | 2016-06-01 | 三菱マテリアル株式会社 | Ag alloy film and manufacturing method thereof |
| JP5522599B1 (en) * | 2012-12-21 | 2014-06-18 | 三菱マテリアル株式会社 | Ag alloy sputtering target |
| JP2014196562A (en) * | 2012-12-21 | 2014-10-16 | 三菱マテリアル株式会社 | Ag alloy sputtering target |
| JP5612147B2 (en) * | 2013-03-11 | 2014-10-22 | 三菱マテリアル株式会社 | Silver alloy sputtering target for forming conductive film and method for producing the same |
| JP6198177B2 (en) * | 2013-07-19 | 2017-09-20 | 三菱マテリアル株式会社 | Ag alloy sputtering target |
| CN105316630B (en) * | 2014-06-04 | 2020-06-19 | 光洋应用材料科技股份有限公司 | Silver alloy target material, manufacturing method thereof and organic light-emitting diode applying same |
| DE102014214683A1 (en) | 2014-07-25 | 2016-01-28 | Heraeus Deutschland GmbH & Co. KG | Sputtering target based on a silver alloy |
| EP3168325B1 (en) | 2015-11-10 | 2022-01-05 | Materion Advanced Materials Germany GmbH | Silver alloy based sputter target |
| CN106893989B (en) * | 2016-12-29 | 2019-10-01 | 昆山全亚冠环保科技有限公司 | A kind of silver titanium alloy target crack resistence rolling mill practice |
| WO2019163745A1 (en) * | 2018-02-20 | 2019-08-29 | 三菱マテリアル株式会社 | Ag alloy sputtering target and method for manufacturing ag alloy sputtering target |
| JP2019143242A (en) | 2018-02-20 | 2019-08-29 | 三菱マテリアル株式会社 | Ag ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD OF Ag ALLOY SPUTTERING TARGET |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2857015B2 (en) | 1993-04-08 | 1999-02-10 | 株式会社ジャパンエナジー | Sputtering target made of high-purity aluminum or its alloy |
| DE60230728D1 (en) | 2001-03-16 | 2009-02-26 | Ishifuku Metal Ind | Optical disc medium, reflective STN liquid crystal display and organic EL display |
| AU2003242423A1 (en) * | 2002-05-28 | 2003-12-12 | Ishifuku Metal Industry Co., Ltd. | Sputtering target material |
| JP4264302B2 (en) | 2002-06-24 | 2009-05-13 | 株式会社コベルコ科研 | Silver alloy sputtering target and manufacturing method thereof |
| CN1238554C (en) * | 2002-06-24 | 2006-01-25 | 株式会社钢臂功科研 | Silver alloy sputtering target and its producing method |
| JP4384453B2 (en) | 2003-07-16 | 2009-12-16 | 株式会社神戸製鋼所 | Ag-based sputtering target and manufacturing method thereof |
| JP4351144B2 (en) * | 2004-12-08 | 2009-10-28 | 田中貴金属工業株式会社 | Silver alloy |
-
2010
- 2010-09-17 JP JP2010210149A patent/JP4793502B2/en active Active
- 2010-10-05 CN CN2010800200309A patent/CN102421931B/en active Active
- 2010-10-05 US US13/500,224 patent/US8821769B2/en active Active
- 2010-10-05 KR KR1020117022697A patent/KR101099415B1/en active IP Right Grant
- 2010-10-05 EP EP10822155.7A patent/EP2487274B1/en active Active
- 2010-10-05 WO PCT/JP2010/067817 patent/WO2011043486A1/en active Application Filing
- 2010-10-06 TW TW099134036A patent/TWI385263B/en active
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