JP2011091139A5 - - Google Patents

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Publication number
JP2011091139A5
JP2011091139A5 JP2009242175A JP2009242175A JP2011091139A5 JP 2011091139 A5 JP2011091139 A5 JP 2011091139A5 JP 2009242175 A JP2009242175 A JP 2009242175A JP 2009242175 A JP2009242175 A JP 2009242175A JP 2011091139 A5 JP2011091139 A5 JP 2011091139A5
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JP
Japan
Prior art keywords
mesa structure
electrode
mesa
semiconductor substrate
upper electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009242175A
Other languages
English (en)
Japanese (ja)
Other versions
JP5483544B2 (ja
JP2011091139A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009242175A priority Critical patent/JP5483544B2/ja
Priority claimed from JP2009242175A external-priority patent/JP5483544B2/ja
Priority to US12/893,750 priority patent/US8350351B2/en
Publication of JP2011091139A publication Critical patent/JP2011091139A/ja
Publication of JP2011091139A5 publication Critical patent/JP2011091139A5/ja
Application granted granted Critical
Publication of JP5483544B2 publication Critical patent/JP5483544B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009242175A 2009-10-21 2009-10-21 半導体受光装置 Expired - Fee Related JP5483544B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009242175A JP5483544B2 (ja) 2009-10-21 2009-10-21 半導体受光装置
US12/893,750 US8350351B2 (en) 2009-10-21 2010-09-29 Semiconductor light receiving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009242175A JP5483544B2 (ja) 2009-10-21 2009-10-21 半導体受光装置

Publications (3)

Publication Number Publication Date
JP2011091139A JP2011091139A (ja) 2011-05-06
JP2011091139A5 true JP2011091139A5 (cg-RX-API-DMAC10.html) 2012-10-11
JP5483544B2 JP5483544B2 (ja) 2014-05-07

Family

ID=43878647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009242175A Expired - Fee Related JP5483544B2 (ja) 2009-10-21 2009-10-21 半導体受光装置

Country Status (2)

Country Link
US (1) US8350351B2 (cg-RX-API-DMAC10.html)
JP (1) JP5483544B2 (cg-RX-API-DMAC10.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168635A (ja) 2012-01-20 2013-08-29 Sumitomo Electric Device Innovations Inc 半導体受光装置
JP2017157602A (ja) * 2016-02-29 2017-09-07 ルネサスエレクトロニクス株式会社 光半導体装置及びその製造方法
US11695093B2 (en) * 2018-11-21 2023-07-04 Analog Devices, Inc. Superlattice photodetector/light emitting diode
JP7454917B2 (ja) 2018-12-12 2024-03-25 浜松ホトニクス株式会社 光検出装置
US12113088B2 (en) 2018-12-12 2024-10-08 Hamamatsu Photonics K.K. Light detection device
US11901379B2 (en) * 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
JPWO2020121858A1 (ja) 2018-12-12 2021-11-04 浜松ホトニクス株式会社 光検出装置及び光検出装置の製造方法
CN113167643B (zh) 2018-12-12 2024-05-28 浜松光子学株式会社 光检测装置及光检测装置的制造方法
JP2023174432A (ja) * 2022-05-25 2023-12-07 日本ルメンタム株式会社 半導体受光素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2945438B2 (ja) * 1990-04-23 1999-09-06 株式会社日立製作所 光半導体装置及びそれを用いた受光器
JPH04167565A (ja) * 1990-10-31 1992-06-15 Fujitsu Ltd フリップチップ型受光素子
DE4314454C1 (de) * 1993-05-03 1994-10-13 Ika Analysentech Gmbh Bombenkalorimeter
US5485010A (en) * 1994-01-13 1996-01-16 Texas Instruments Incorporated Thermal isolation structure for hybrid thermal imaging system
US5426304A (en) * 1994-01-13 1995-06-20 Texas Instruments Incorporated Infrared detector thermal isolation structure and method
US5574282A (en) * 1994-06-30 1996-11-12 Texas Instruments Incorporated Thermal isolation for hybrid thermal detectors
US5559332A (en) * 1994-11-04 1996-09-24 Texas Instruments Incorporated Thermal detector and method
US5644838A (en) * 1995-01-03 1997-07-08 Texas Instruments Incorporated Method of fabricating a focal plane array for hybrid thermal imaging system
US5626773A (en) * 1995-01-03 1997-05-06 Texas Instruments Incorporated Structure and method including dry etching techniques for forming an array of thermal sensitive elements
US6348739B1 (en) * 1999-04-28 2002-02-19 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
JP3913402B2 (ja) * 1999-06-02 2007-05-09 新日本無線株式会社 高周波回路装置
US6547946B2 (en) * 2000-04-10 2003-04-15 The Regents Of The University Of California Processing a printed wiring board by single bath electrodeposition
US8022390B1 (en) * 2007-08-17 2011-09-20 Sandia Corporation Lateral conduction infrared photodetector

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