JP2011086827A - Substrate heating device, substrate heating method and storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate heating device which is able to heat a substrate with high uniformity and to quickly change the heating temperature for each substrate. <P>SOLUTION: The substrate heating device includes a processing vessel which forms a processing space; a mounting portion located in the processing vessel for mounting a substrate; an overheated vapor supply means for supplying overheated vapor for heating the substrate to the processing space; and an evacuating means for evacuating the processing space. As compared to conventional case of heating a substrate mounted on a hot platen, heating in the present device is not affected by the temperature distribution of a hot platen or by a distance from the hot platen to respective parts of the substrate, and accordingly, the substrate can be heated to high uniformity; and since there is no need for removal of heat remaining in the hot platen, heating temperature can be quickly changed among the substrates. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate heating apparatus that heats a substrate with superheated steam, a substrate heating method, and a storage medium that stores a program for executing the method.

  In the photoresist process, which is one of the semiconductor manufacturing processes, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), the resist is exposed in a predetermined pattern, and then developed to form a resist pattern. . Such a process is generally performed by using a system in which an exposure apparatus is connected to a coating and developing apparatus for coating and developing a resist.

  This coating / developing apparatus is provided with a heating module (heating apparatus) for heating the wafer after supplying a chemical solution such as a resist or before and after the developing process after exposure. In this heating module, a hot plate on which a wafer is placed is provided, and a heater which is a resistance heating element is embedded in the hot plate. An electric current is passed through the heater to heat the hot plate, and the wafer is heated by the heat.

  By the way, in order to improve the throughput, the wafer has been increased in size, and the hot plate is also required to increase in size in order to process the wafer thus increased in size. However, it is difficult to heat such a large hot plate with high uniformity. Therefore, it is difficult to heat the wafer with high uniformity within the surface. Further, when the wafer is warped, the temperature distribution is different within the wafer surface due to the difference in the distance between the wafer and the hot plate.

  In the heating module, for example, after the first wafer is heated at the first processing temperature at the time of lot switching, the subsequent second wafer is heated at a second processing temperature lower than the first processing temperature. There is a case. In this case, in the heating by the hot plate, a lot of time is consumed for cooling the hot plate, and the throughput may be reduced.

  Therefore, there has been a demand for a substrate heating apparatus that can uniformly heat a wafer without using resistance heating as described above, and can easily change the heating temperature of the wafer. In addition, although patent document 1 describes the apparatus which supplies superheated steam to a board | substrate and peels a film | membrane, said problem cannot be solved. Further, Patent Document 2 describes a heating device provided with a plurality of hot plates, but it cannot solve the above problem in the same manner.

JP2008-153510 (paragraph 0076, FIG. 5) Japanese Patent Laid-Open No. 2002-93687 (FIG. 4)

  The present invention has been made under such circumstances, and an object of the present invention is to provide a substrate heating apparatus and substrate heating device that can heat the substrate with high uniformity and can quickly change the heating temperature for each substrate. And a storage medium comprising a computer program for performing the method and the substrate heating method.

The substrate heating apparatus of the present invention includes a processing container that forms a processing space;
A placement section for placing the substrate, provided in the processing container;
Superheated steam supply means for supplying superheated steam for heating the substrate to the processing space;
And an exhaust means for exhausting the processing space.

The superheated steam supply means includes, for example, a discharge port for supplying superheated steam from the lower center of the substrate placed on the placement unit,
The exhaust means includes an exhaust port that exhausts air from above the center of the substrate, and a plurality of the discharge ports are provided so as to discharge superheated steam toward the peripheral portion of the processing space. The processing space may be formed in a disc shape having a central portion having a thickness greater than the thickness of the peripheral portion thereof, and the processing space surrounds the discharge port and the exhaust port, respectively. A flow regulating member for regulating the flow may be provided.

  In the processing space, a discharge port for supplying superheated steam and an exhaust port may be opened on one end side and the other end side of the substrate, respectively, in which case, for example, the discharge port is located above and below the one end side of the substrate. The exhaust ports are opened up and down on the other end side of the substrate, respectively, and the upper wall surface of the processing space and the lower wall surface of the processing space are formed in parallel to the substrate.

  Further, a partition member for partitioning the processing space into a plurality of lateral directions, an operating mechanism for operating the partition member between a state in which the processing space communicates and a state in which the processing space communicates, and a substrate between the processing spaces And the superheated steam supply means may be configured to individually supply superheated steam to each processing space, and one of the plurality of processing spaces includes superheated steam. Instead of this, a gas for cooling the substrate may be supplied. Further, for example, the processing container is provided with a fluid retention space for controlling the temperature of the processing space around the processing space, and fluid supply means for supplying fluid to the fluid retention space; Removing means for removing the fluid.

  Further, the processing container is provided with a fluid retention space for controlling the temperature for each of the partitioned processing spaces, and supply means for individually supplying fluid to each fluid convection space, and an individual from each fluid retention space. And a removing means for removing the fluid. The conveying means includes, for example, a belt that also serves as the placement unit, and a belt driving mechanism that moves the belt along the arrangement direction of the processing space.

  The substrate heating method of the present invention includes a step of placing a substrate on a placement portion provided in a processing container that forms a processing space, and superheated steam for heating the substrate by means of superheated steam supply means. A step of supplying to the space; and a step of exhausting the processing space by the exhaust means.

  For example, a partition member for partitioning the processing space into a plurality of lateral directions is operated between a state in which the processing space is communicated by the operating mechanism and a state in which the processing space is partitioned, and a substrate is disposed between the processing spaces by the transport unit. And a step of supplying superheated steam to each processing space individually, and a step of supplying a gas for cooling the substrate instead of the superheated steam to one of the plurality of processing spaces. Also good.

  And a step of supplying a fluid to a fluid retention space for controlling the temperature of the processing space provided around the processing space, and a step of removing the fluid from the fluid retention space. Alternatively, when the processing space is partitioned, a process of supplying a fluid individually to a fluid retaining space for controlling the temperature of each partitioned processing space, and each fluid retaining space And a step of individually removing fluids.

  A storage medium storing a computer program used in a substrate heating apparatus, wherein the computer program is for carrying out the substrate heating method described above.

  According to the present invention, the apparatus includes a processing container, superheated steam supply means for heating the substrate by supplying superheated steam to the processing space in the processing container, and exhaust means for exhausting the processing space. Therefore, compared to the case where a substrate is placed on a hot plate and heated, the substrate is not affected by the temperature distribution of the hot plate or the distance from each portion of the substrate to the hot plate, so the substrate is heated with high uniformity. Since it is not necessary to remove the heat remaining on the hot plate, the heating temperature can be quickly changed between the substrates. Therefore, throughput can be improved.

It is a vertical side view of the wafer heating apparatus according to the present invention. It is an AA arrow crossing top view of the said wafer heating apparatus. It is a vertical side view of the nozzle of the wafer heating device. It is a BB arrow crossing top view of the said wafer heating apparatus. It is explanatory drawing which showed a mode that a wafer was heated with the said wafer heating apparatus. It is explanatory drawing which showed a mode that a wafer was heated with the said wafer heating apparatus. It is a time chart which shows the timing of supply of superheated steam, and the timing of exhaust. It is a vertical side view of another wafer heating apparatus. It is a cross-sectional top view of the said wafer heating apparatus. It is a perspective view of the wafer heating device. It is explanatory drawing which showed a mode that a wafer was heated with the said wafer heating apparatus. It is explanatory drawing which showed a mode that a wafer was heated with the said wafer heating apparatus. It is a vertical side view of another wafer heating apparatus. It is a cross-sectional top view of the said wafer heating apparatus. It is explanatory drawing which shows the flow of the superheated steam of the said wafer heating apparatus. It is a vertical side view of the coating and developing apparatus.

(First embodiment)
A wafer heating apparatus 1 according to the substrate heating apparatus of the present invention will be described with reference to FIG. 1 which is a longitudinal side view and a longitudinal side view. The wafer heating apparatus 1 includes a flat rectangular processing container 11, and a processing space S for heating the wafer W as a substrate is provided in the processing container 11. The processing container 11 includes an outer wall portion 11a and an intermediate portion 11b whose outer side is covered with the outer wall portion 11a. The inside of the intermediate portion 11b is covered with an inner wall portion 11c that forms the processing space S. The outer wall portion 11a is made of metal. The intermediate portion 11b is made of, for example, a porous ceramic made of silica or a heat insulating material such as glass wool, and has a role of keeping the processing space S warm. Moreover, in order to prevent the corrosion by the superheated steam mentioned later, the inner wall part 11c is comprised with stainless steel. The processing space S is a circular sealed space whose thickness increases from the peripheral part toward the central part, and the wall surface forming the processing space S is formed of a curved surface.

  The processing container 11 includes a lid 12 that forms one edge of the processing container 11 and a main body 13 that is opened and closed by the lid 12. The main body 13 is provided with an opening 14 for carrying the wafer W into the main body 13. The opening 14 constitutes the processing space S. And as shown in FIG. 1, when the opening part 14 is obstruct | occluded by the cover part 12, the said process space S is formed. The main body 13 is provided with an O-ring 15 as a seal member around the opening 14, and the lid 12 is in close contact with the main body 13 through the O-ring 15.

  A drive mechanism 16 is connected to the lid 12, and the drive mechanism 16 moves the lid 12 away from the position shown in FIG. The opening 14 is opened by lowering.

  FIG. 2 is a cross-sectional view of the processing container 11 in FIG. As shown in FIG. 2, four support pins 17 forming a wafer mounting portion protrude upward from the lower portion of the processing space S, and these support pins 16 place the wafer W in the center of the processing space S. They are arranged in the circumferential direction of the processing space S so that they can be supported. A nozzle 21 is provided at the lower center of the processing space S. FIG. 3 is a vertical side view of the nozzle 21. The nozzle 21 includes a plurality of discharge ports 22 along a side periphery thereof, and a flow path 23 that communicates with the discharge ports 22 therein. The nozzle 21 discharges superheated steam, which will be described later, obliquely upward from each discharge port 22, and the superheated steam is supplied to the peripheral portion of the processing space S.

  An exhaust part 24 is provided at the upper center of the processing space S so as to face the nozzle 21. The exhaust part 24 is configured, for example, in a shape in which the nozzle 21 is turned upside down, and a portion corresponding to the discharge port 22 is configured as an exhaust port 25. Further, rectifying members 18 and 19 projecting upward from the processing space S are provided below the processing space S. These rectifying members 18 and 19 are formed in a ring shape in plan view as shown in FIG. 2 and are provided concentrically around the nozzle 21. On the other hand, also in the upper part of the processing space S, the rectifying members 18 and 19 are provided so as to protrude downward from the processing space S. Thus, the rectifying members 18 and 19 provided on the upper side of the processing space S are configured concentrically with the exhaust part 24 as the center. The rectifying members 18 and 19 provided above and below the processing space S are provided, for example, at positions that overlap each other vertically.

  A flow path 26 connected to the nozzle 21 is provided at the lower portion of the processing container 11, and one end of a pipe 31 is connected to the upstream side of the flow path 26. The other end of the pipe 31 is connected to a water supply source 35 in which water is stored via a steam superheater 32, a steam generator 33, and a flow rate controller 34 in this order. The steam superheater 33 and the steam generator 34 constitute a superheated steam generator 36.

  The flow rate control unit 34 includes a valve, a mass flow controller, and the like. The flow rate control unit 34 receives a control signal output from the control unit 100 described later, and pipes water supplied from the water supply source 35 according to the control signal. 31 is supplied to the downstream side. The water vapor generating unit 33 is configured to heat the supplied water at normal pressure to generate saturated water vapor and supply the saturated water vapor downstream. The steam superheater 32 heats the steam supplied from the steam superheater 32 at a normal pressure to a temperature higher than 100 ° C., for example, 110 ° C. to 300 ° C. according to a control signal output from the controller 100, Is generated. And it is comprised so that this superheated steam can be supplied to the process space S via the piping 31. FIG.

Here, superheated steam is H ₂ O gas obtained by heating saturated steam to a temperature equal to or higher than its saturation temperature at a predetermined pressure. When heated at normal pressure, saturated steam evaporated at 100 ° C. as described above is used. It is a gas obtained by heating at a temperature higher than 100 ° C. Heating of water and saturated steam in the steam superheater 32 and the steam generator 33 is performed by induction heating or resistance heating. Further, a tape heater 37 is wound on the downstream side of the superheated steam generator 36 in the pipe 31 in order to prevent the superheated steam from being cooled and vaporized and liquefied while flowing through the pipe 31.

  A flow path 41 connected to the exhaust port 25 of the exhaust section 24 is provided in the upper portion of the processing container 11, and one end of an exhaust pipe 42 is connected to the upstream side of the flow path 41. The other end of the exhaust pipe 42 is connected to an exhaust means 44 configured by, for example, a vacuum pump via an exhaust amount adjusting unit 43. The exhaust amount adjusting unit 43 includes a valve, a mass flow controller, and the like, receives a control signal output from the control unit 100, and controls the exhaust amount of the processing space S according to the control signal.

Each pipe is made of, for example, metal, but the inner wall surfaces of the pipes 31 and 42 in contact with the superheated steam are covered with quartz. Similarly, the inner wall surface of the processing space S in contact with the superheated steam, the inner wall surfaces of the flow paths 26 and 41 of the processing vessel 11, the surfaces of the nozzle 22 and the exhaust part 24 are made of quartz. This is to prevent each part from being corroded by the superheated steam and causing the corroded material to adhere to the wafer W. In addition, each part which contact | connects these superheated water vapor | steams may be comprised with stainless steel like the inner wall part 11c of the processing container 11, and the inner wall part 11c of the processing container 11 may be comprised with quartz.

  FIG. 4 is a cross-sectional plan view of the processing container 11 in FIG. As shown in this figure, a flat ring-shaped air retention space 45 is provided in the lower part of the processing container 11 so as to surround the flow path 26. In addition, a flat ring-shaped air retention space 46 is provided at the upper portion of the processing container 11 so as to surround the flow path 41. The air retention space 46 is formed in the same shape as the air retention space 45, and these air retention spaces 45, 46 are provided at positions that overlap each other vertically. The air staying spaces 45 and 46 are connected to each other by an air staying space 47 formed so as to go up and down the processing container 11. A plurality of air retention spaces 47 are formed outside the processing space S along the circumferential direction of the processing space S.

  The downstream ends of the pipes 51 and 51 are connected to the lower portion of the processing container 11, and the downstream ends open to the air retention space 45. The upstream sides of the pipes 51 and 51 merge with each other, and are connected to a supply source 54 in which air is stored via a flow rate control unit 55 and a cooling unit 56 in this order. In the figure, V 1 is a valve interposed in the pipe 51. The flow rate control unit 55 is configured in the same manner as the flow rate control unit 34, receives a control signal output from the control unit 100, and controls air supply / disconnection to the air retention spaces 45 to 47. The cooling unit 56 cools the air supplied from the upstream side of the pipe 51 to a predetermined temperature in accordance with a control signal output from the control unit 100 and supplies the air to the downstream side.

  One end of pipes 61, 61 is connected to the upper portion of the processing container 11, and this one end opens to the air retention space 46. The other ends of the pipes 61 and 61 merge with each other and are connected to the exhaust unit 44 via the exhaust amount control unit 62. In the figure, V2 is a valve interposed in the pipe 61. The exhaust amount control unit 62 is configured in the same manner as the exhaust amount control unit 43, receives the control signal output from the control unit 100, and controls the exhaust amount of air from the air retention spaces 45 to 47, respectively.

  The wafer heating apparatus 1 is provided with a control unit 100 including a computer. The control unit 100 includes a data processing unit including a program, a memory, and a CPU. The control unit 100 sends a control signal to each unit of the wafer heating apparatus 1 to cause the program to proceed with each processing step described above. Instructions (each step) are embedded in In addition, for example, the memory has an area where processing parameter values such as the superheated steam supply flow rate, air supply flow rate, and power value are written, and these processing parameters are read when the CPU executes each instruction of the program. A control signal corresponding to the parameter value is sent to each part of the wafer heating apparatus 1. This program (including programs related to processing parameter input operations and display) is stored in a computer storage medium such as a flexible disk, compact disk, hard disk, or MO (magneto-optical disk) memory card and installed in the control unit 100. Is done.

  Next, how the wafer W is heated by the wafer heating apparatus 1 will be described with reference to FIGS. For example, a resist is applied to the wafer W carried into the wafer heating apparatus 1 by a previous application apparatus. Here, a case will be described in which, for example, after several wafers W1 of the first lot heated at 170 ° C. are loaded, the wafers W2 of the second lot heated at 150 ° C. are continuously processed. FIG. 7 is a time chart showing the timing of supplying and exhausting superheated steam when processing the wafer W1, and will be described with reference to FIG.

  FIG. 5A shows the wafer heating apparatus 1 before the wafer W1 is loaded. At this time, the valves V1 and V2 are closed, air stays in the air staying spaces 45 to 47, and the air staying spaces 45 to 47 are at normal pressure. Further, the tape heater 37 is heated to a predetermined temperature. Further, the supply of superheated steam from the nozzle 21 and the exhaust from the exhaust part 24 are not performed.

  When the wafer W is held by the transfer means 50 of the wafer W and approaches the wafer heating apparatus 1, the lid 12 is moved away from the main body 13 in the lateral direction, and then lowered to open the opening 14. Then, as shown in FIG. 5B, the wafer W transfer means 50 enters the main body 13 through the opening 14 and then descends, and the wafer W is transferred onto the support pins 17 ( Time t1). When the conveying means 50 is retracted from the main body 13, the lid 12 is raised, and the processing space S is formed in close contact with the main body 13 (FIG. 5C).

  Subsequently, water is supplied to the superheated steam generation unit 36 at a predetermined flow rate to generate 170 ° C. superheated steam, and exhaust is started from the exhaust unit 24 (time t2). The exhaust flow rate is, for example, the same amount as the supply flow rate of superheated steam to the processing space S, and the processing space S is maintained at normal pressure. The generated superheated steam is supplied to the processing space S from the discharge port 22 of the nozzle 21 as indicated by an arrow in FIG. 5D, and the processing space is collided with the rectifying members 18 and 19 on the back side of the wafer W1. It goes from the center of the wafer W1 to the outer peripheral side along the wall surface of S. Then, the superheated steam directed toward the outer periphery turns around from the outer periphery to the surface side of the wafer W1 and collides with the rectifying members 18 and 19 toward the center side of the wafer W1 along the wall surface of the processing space S. It is exhausted from the exhaust part 24. At this time, due to the heat insulation between the processing space S and the external space of the wafer heating apparatus 1 due to the air staying in the air retention spaces 45 to 47, the temperature of the processing space S is prevented from lowering. Therefore, steaming and liquefaction of superheated steam in the processing space S is prevented.

  Thus, a flow of superheated steam is formed in the processing space S, and the wafer W is heated to 170 ° C. by being exposed to this flow. A gaseous resist sublimate is generated from the wafer W. The sublimate is exhausted by the flow of the superheated steam and removed from the processing space S. Then, the resist applied to the wafer W is dried. By the way, the convective heat transfer in which the superheated steam contacts the object to be heated and transfers heat is 0.48 cal / g / ° C. For example, the convective heat transfer of air is 0.24 cal / g / ° C. That is, compared with the case where heated air is supplied to the wafer W, the heat transfer to the wafer W is higher when the superheated steam is supplied, and a large energy can be given to the wafer W in a short time. Therefore, the wafer W can be heated in a short time. Moreover, since superheated steam has less oxygen content than saturated steam, oxidation of the wafer W and each film formed on the surface thereof can be suppressed.

  After a predetermined time has elapsed from the start of the supply of superheated steam, the supply of superheated steam stops (time t3), and after the superheated steam in the processing space S is removed, the processing space is slightly delayed from the stop of the supply of superheated steam. The exhaust of S stops (time t4). The processing container 11 heated by the superheated steam is radiated and cooled. Thereafter, the supply of superheated steam to the processing space S and the exhaust of the processing space S are started again (time t5). The interval between the times t4 and t5 is set such that the sublimate is cooled and solidified and does not adhere to the processing container 11 or the wafer W1. After supplying the superheated steam and restarting the exhaust, the wafer W1 is continuously heated and the drying of the resist proceeds. Then, after a predetermined time has elapsed since the supply and exhaust of superheated steam were resumed, the supply of superheated steam was stopped (time t6), and after the superheated steam in the processing space S was removed, the exhaust of the processing space S was stopped. (Time t7).

  Thereafter, the lid portion 12 is opened, the transfer means 50 enters the main body portion 13, and the wafer W is unloaded from the main body portion 13 by an operation reverse to that during loading (FIG. 6A). The part 12 is closed (FIG. 6B). Thereafter, the subsequent wafer W1 is carried into the heating apparatus 1 and is processed in the same manner as the previous wafer W1.

  Then, after the processing of all the wafers W1 of the first lot is completed, the wafers W2 of the second lot are carried into the wafer heating apparatus 1. On the other hand, the valves V1 and V2 are opened, and the air cooled to a predetermined temperature, for example, 23 ° C. by the cooling unit 56 is supplied to the air retention spaces 45 to 47 at a predetermined flow rate. Exhaust from the air retention spaces 45 to 47 is performed at the same flow rate (FIG. 6C). And replacement | exchange of the air of the air retention space 45-47 advances, and the temperature of the process space S falls. After a predetermined time has elapsed from the start of air supply and exhaust, the valves V1 and V2 are closed. The temperature of the processing space S at this time is lower than the temperature at the time of the heat treatment of the wafer W1, but is set to a temperature at which the superheated steam is not vaporized and liquefied when the superheated steam is supplied to the processing space S. Thereafter, 150 ° C. superheated steam is supplied to the processing space S and the processing space S is exhausted as in the case of the heat treatment of the wafer W1, and the wafer W2 is heat-treated (FIG. 6D). Then, processing of the wafer W2 proceeds in the same process as when processing the wafer W1, and after the processing is completed, the wafer W2 is unloaded from the processing container 11.

  According to this wafer heating apparatus 1, superheated steam whose temperature is controlled according to the heating temperature of the wafer W is supplied to the wafer W, so that it is compared with the case where heating is performed by a hot plate on which a conventional wafer W is placed. The wafer W can be heated with high uniformity. Further, since the heating temperature of the wafer W can be quickly changed by changing the temperature of the superheated steam, the throughput can be improved. Furthermore, since the wafer W is heated by being exposed to the flow of superheated steam, even if sublimates are generated from each film formed on the wafer W, the sublimates are pushed away by the flow of superheated steam and removed. Therefore, it is possible to suppress the sublimate from solidifying and adhering to the wafer W.

  Further, according to the wafer heating apparatus 1, in the processing container 11, the air retention spaces 45 to 47 are provided around the processing space S, so that the processing space S is insulated and the temperature of the processing space S is kept high. Be drunk. Accordingly, it is possible to prevent the superheated water vapor from aggregating on the wafer W to be vaporized and liquefied, thereby causing variations in heating of each part of the wafer W. Furthermore, since the cooled air can be supplied to the air retention spaces 45 to 47, the temperature of the processing container 11 can be quickly lowered. Therefore, since the wafer W having a lower processing temperature than the wafer W processed immediately before can be processed quickly, the throughput can be greatly improved. In addition, since the processing container 11 does not have a heat source, the temperature of the processing container 11 can be quickly lowered, so that the throughput can be improved.

  In the above example, the wafer W1 having a high processing temperature is loaded into the wafer heating apparatus 1 and then the wafer W2 having a low processing temperature is loaded into the wafer heating apparatus 1. However, after the wafer W2, for example, When the wafer W3 whose processing temperature is 180 ° C. and higher than the processing temperature of the wafer W2 is carried in, the wafer W3 is processed without changing the air in the air convection spaces 45 to 47, for example.

  Further, in this example, the flow regulating members 18 and 19 are provided in the processing space S, the flow of superheated steam is restricted, the residence time of the superheated steam in the processing space S is lengthened, and the supply amount of superheated steam is small. Although the wafer W can be heated, superheated steam may be supplied without providing the rectifying members 18 and 19. In that case, since the processing space S is configured by a curved surface, the superheated steam flows more smoothly from the nozzle 21 to the exhaust unit 24 along the wall surface of the processing space S. As a result, the wafer W can be heated with higher uniformity. Further, in this example, the discharge port 22 of the nozzle 21 is formed so as not to open toward the wafer W so that the superheated steam is not discharged directly onto the wafer W. Such a configuration is preferable because it prevents the wafer W from being displaced due to the superheated steam discharge pressure and cannot be transferred to the transfer means 50.

(Second Embodiment)
Next, the wafer heating apparatus 7 according to the second embodiment will be described focusing on the differences from the wafer heating apparatus 1 with reference to FIGS. 8 and 9 which are longitudinal side views and transverse plan views. . The schematic configuration of the wafer heating device 7 will be described. In one processing container 71, the processing spaces SA, SB, SC are linearly arranged in the horizontal direction. A pair of rotating bodies 72 and 73 are arranged on both outer sides in the length direction of the processing container 71 so as to rotate around a horizontal axis and to be parallel to each other. Belts 74 and 74 made of synthetic fiber are wound around the rotating bodies 72 and 73. A rotating mechanism 75, which is a belt drive mechanism, is connected to the rotating body 72. By rotating the rotating body 72 around the rotating shaft, the belt 74 can move in the processing spaces SA, SB, SC and the processing space SA, It moves along a circular orbit passing under SB and SC.

  Further, elevating pins 77A and 77B are provided on both outer sides in the length direction of the processing container 71, and are configured to be moved up and down by an elevating mechanism 78. The lift pins 77 </ b> A and 77 </ b> B transfer the wafer W between the transfer means 50 of the wafer W outside the apparatus 7 and the belt 74. When the wafer W is transferred to the belts 74 and 74 on one end side (left side in the drawing) of the processing container 71, the wafer W is sequentially transferred through the processing spaces SA, SB, and SC by the belts 74 and 74, and the processing space It is carried out from SC to the other end side of processing container 71. During this transfer, the wafer W is heated at different temperatures in the processing spaces SA, SB, and SC.

  The processing spaces SA, SB, and SC are configured in substantially the same manner as the processing space S described above, but the support pins 17 are provided inside the processing space S because the wafer W is placed on the belt 74. Absent. Shutters 79A, 79B, and 79C are provided at the entrances to the processing spaces SA, SB, and SC, respectively. A shutter 79D is provided at the exit of the processing space SC. FIG. 10 shows the shutter 79 </ b> A, and notches 70 and 70 constituting the moving path of the belt 74 are provided below the shutter 79 </ b> A. The shutters 79B to 79D are configured in the same manner as the shutter 79A. These shutters 79 </ b> A to 79 </ b> D are partition members that partition each processing space, and are moved up and down independently of each other by an operating mechanism (not shown). Thereby, the processing spaces and the processing space and the external space of the processing container 71 are partitioned.

  In addition, air retention spaces 45 and 4647 are provided around the processing spaces SA, SB, and SC, respectively, and the temperature can be individually changed for the processing spaces SA, SB, and SC. . Further, a piping system is configured as shown in FIG. 8 so that cooling air can be individually supplied to each air retention space and exhaust can be performed individually from each air retention space. Similar to the wafer heating apparatus 1, the cooling air piping system includes piping 51 and 61, a flow rate control unit 55, a cooling unit 56, an exhaust amount control unit 62, and valves. Among the components of the piping system and the air retention space, those corresponding to the processing space SA are indicated by the symbol A after the numbers used in FIG. Similarly, those corresponding to the processing spaces SB and SC are shown in the drawing with B and C appended to the numbers, respectively. In addition, symbols A, B, and C are not given to those components that are common to the processing spaces SA to SC.

  As shown in FIG. 8, the piping system is configured so that superheated steam can be supplied from the superheated steam generation unit 36 to the processing spaces SA, SB, and SC, respectively, and exhaust can be performed individually from the processing spaces SA, SB, and SC. Has been. Also in this superheated steam piping system, like the cooling air piping system, those corresponding to the processing spaces SA, SB and SC are shown in the drawing with symbols A, B and C respectively attached to the numbers. . V3A to V3C in the figure are valves for switching the supply destination of the superheated steam as described above. Although not shown in the drawing, the tape heater 37 is wound from the processing vessel 71 to the superheated steam generator 36 as in the wafer heating apparatus 1.

  Although not shown, in the wafer heating apparatus 7, the operation of each part of the apparatus is controlled by the control unit 100 as in the wafer heating apparatus 1, and a series of processes are performed on the wafer W. The same applies to wafer heating apparatuses of other embodiments described later.

  Subsequently, the operation of the wafer heating apparatus 7 will be described. For example, a wafer W coated with a chemical solution constituting an insulating film is transferred to the wafer heating device 7. In the processing spaces SA, SB, and SC, the wafer W is heated stepwise at different temperatures, and the removal of the solvent contained in the chemical solution, the formation of the molecular skeleton constituting the insulating film, and the baking of the insulating film are sequentially performed. . For example, the first lot of wafers W1 transferred to the wafer heating device 7 in advance is heated at 120 ° C., 140 ° C., and 160 ° C. in the processing spaces SA, SB, and SC, respectively, and then transferred to the second lot. The lot of wafers W2 are heated at 110 ° C., 130 ° C., and 150 ° C., respectively.

  Before the wafer is carried in, air stays in each air staying space as in the wafer heating apparatus 1, and the tape heater 37 is heated to a predetermined temperature. At this time, the shutters 79A to 72D and the lifting pins 77 are in the lowered position shown in FIG. Then, when the wafer W1 is transferred to the wafer heating device 7 by a transfer means (not shown), it is delivered to the raised lift pins 77A (FIG. 11A). When the raising / lowering pins 77 are lowered and the wafer W1 is transferred to the belt 74, the shutter 79A is raised and the entrance of the processing space SA is opened (FIG. 11B). The belt 74 is driven, the wafer W is loaded into the processing space SA, and the driving of the belt 74 is stopped. The shutter 79A is lowered, the processing space SA is partitioned from the external space, superheated steam at 120 ° C. is supplied to the processing space SA, the processing space SA is exhausted, and the wafer W1 is heated (FIG. 11C). .

  Similarly to the first embodiment, after a predetermined time has elapsed, the supply of superheated steam to the processing space SA is stopped, and the exhaust of the processing space SA is stopped a little later than that. Then, after the processing space SA is cooled, superheated steam at 120 ° C. is supplied again to the processing space SA, and the processing space SA is exhausted to heat the wafer W1. Thereafter, the supply of superheated steam to the processing space SA is stopped again, and the exhaust of the processing space SA is stopped a little later. Subsequently, the shutter 79B is raised and the entrance of the processing space SB is opened. The belt 74 is driven, and the wafer W1 is carried into the processing space SB (FIG. 11 (d)).

  Thereafter, the driving of the belt 74 is stopped, the shutter 79B is lowered, and the processing space SB is partitioned from the processing space SA. Then, 140 ° C. superheated steam is supplied to the processing space SB, the processing space SB is exhausted, and the wafer W1 is heated (FIG. 12A). After the elapse of a predetermined time, the supply of the superheated steam is stopped, and the exhaust of the processing space SB is stopped with a slight delay. Then, after the processing space SB is cooled, 140 ° C. superheated steam is again supplied to the processing space SB, and the processing space SB is exhausted to heat the wafer W1.

  Thereafter, the supply of superheated steam to the processing space SB is stopped again, and the exhaust of the processing space SB is stopped a little later. Subsequently, the shutter 79C is raised and the entrance of the processing space SC is opened. The belt 74 is driven, and the wafer W is loaded into the processing space SC (FIG. 12B). The driving of the belt 74 is stopped, the shutter 79C is lowered, and the processing space SC is partitioned from the processing space SB. Thereafter, 160 ° C. superheated steam is supplied to the processing space SC, the processing space SC is exhausted, and the wafer W1 is heated (FIG. 12C). After a predetermined time has elapsed, the supply of the superheated steam is stopped, and the exhaust of the processing space SC is stopped with a slight delay. Then, after the processing space SC is cooled, 160 ° C. superheated steam is again supplied to the processing space SB, and the processing space SC is exhausted to heat the wafer W1.

  Thereafter, the supply of superheated steam to the processing space SC is stopped, and the exhaust of the processing space SC is stopped a little later. Thereafter, the shutter 79D is raised, the belt 74 is driven, and the wafer W is unloaded from the processing container 71 (FIG. 12D). Thereafter, the lift pins 77 push up the wafer W, and the wafer W is delivered to a transfer means (not shown).

  Thereafter, each air retention space 45A to 47A, 45B to 47B, 45C to 47C is supplied with a predetermined flow rate of air at a predetermined temperature, for example, 23 ° C., and from each air retention space at the same flow rate as the supplied amount. Is exhausted. Each processing space SA, SB, SC is cooled, and then the supply and exhaust of the cooling air to the air retention space are stopped, and the wafer W2 is loaded into the wafer heating device 7 and processed in the same procedure as the wafer W1. Receive.

  In this wafer heating apparatus 7 as well, since the wafer W is heated by superheated steam, the wafer W can be heated with high uniformity as in the wafer heating apparatus 1, and the heating temperature of the wafer W can be changed in a short time. It can be carried out. In the wafer heating apparatus 7, superheated steam having different temperatures is supplied to the wafers W in the connected processing spaces SA, SB, and SC, so that the wafers W are transferred and processed between the plurality of heating apparatuses. The processing time can be shortened compared to the case.

  In the above example, after the wafer W is processed in the processing space SC, the cooling air is supplied to the air retention spaces corresponding to the processing spaces SA to SC to lower the temperature of the processing spaces SA to SC. Since the air retention space is formed every time, the cooling air may be supplied as follows. Immediately after the wafer W1 is heated in the processing space SA, cooling air is supplied to the air staying spaces 45A to 47A around the processing space SA and the air staying spaces 45A to 47A are exhausted to cool the processing space SA. On the other hand, the subsequent wafer W2 is transferred to the belt 74 by the lift pins 77A, the wafer W1 is loaded into the processing space SB and the wafer W2 is loaded into the processing space SA, and the wafers W1, W1 and W at different temperatures in the processing spaces SB and SA, respectively. W2 heat treatment is performed.

Then, after the heat treatment in the processing spaces SB and SA is completed, the cooling air is supplied to and exhausted from the air retention spaces 45B to 47B, and the belt 74 is driven after the temperature of the processing space SB decreases to drive the processing spaces SC, The wafers W1 and W2 are loaded into the SB, respectively, and heat treatment is performed. After the heat treatment in the processing spaces SC and SB is completed, the cooling air is supplied to and exhausted from the air retention spaces 45C to 47C, and the belt 74 is driven after the temperature of the processing space SC is lowered to bring the wafer into the processing space SC. W2 is loaded and the wafer W1 is unloaded from the processing container 71. When the processing of one lot of wafers is completed in one processing space, the temperature of the one processing space is changed according to the processing temperature of the wafers of the other lot independently of the other processing spaces. As a result, wafers of other lots can be loaded quickly, and the throughput can be further increased.

(Third embodiment)
Subsequently, a wafer heating apparatus 8 according to the third embodiment will be described. The wafer heating device 8 is configured in substantially the same manner as the wafer heating device 7, and focuses on the differences from the wafer heating device 7 with reference to FIGS. 13 and 14, which are longitudinal side views and transverse plan views, respectively. explain. In FIG. 13, illustration of a piping system that exhausts air from the air retention space and supplies cooling air to the air retention space is omitted, but this piping system is configured in the same manner as the wafer heating device 7.

  In the wafer heating apparatus 8, the processing spaces SA, SB, and SC are each configured as a flat rectangular space, and the upper and lower surfaces thereof are formed to be parallel to the wafer W. Above and below each of the processing spaces SA to SC, a superheated steam discharge port 81 and an exhaust port 82 are respectively formed at one end side and the other end side in the wafer transfer direction. As shown in FIG. 14, a plurality of discharge ports 81 and exhaust ports 82 opened below each processing space are provided so as to be orthogonal to the wafer W transfer direction. Also on the upper side of each processing space, a plurality of discharge holes 81 and exhaust ports 82 are provided so as to be orthogonal to the transport direction, similarly to the lower side.

  A piping system is formed so that the discharge amount from the discharge port 81 and the exhaust amount from the exhaust port 82 can be individually controlled in each of the processing spaces SA, SB, and SC. In addition, this piping system is configured such that the upper and lower discharge ports 81 can independently control the amount of superheated steam supplied, and the upper and lower exhaust ports can independently control the amount of superheated steam discharged. . In the figure, 83 is a flow rate control unit, and 84 is an exhaust amount control unit. A pipe 85 connects each discharge port 81 and the superheated steam generator 36 and corresponds to the pipe 31 of the wafer heating apparatuses 1 and 7. A pipe 86 connects each exhaust port 82 and the exhaust unit 44 and corresponds to the pipe 61 of the wafer heating apparatuses 1 and 7. The flow rate control unit 83 is provided in the pipe 85 and controls the amount of superheated steam supplied to each processing space. The exhaust amount control unit 84 is interposed in the pipe 86 and controls the exhaust amount of each processing space.

  Although not shown, a tape heater 37 is wound around the pipe 85 from the processing vessel 11 to the superheated steam generator 36 in order to prevent liquefaction and steaming of the superheated steam as in the wafer heating devices 1 and 7. ing. In this example, the air retention spaces 45A to 45C and 46A to 46C are configured in the same manner as in the first and second embodiments, except that they are formed in a flat plate shape.

  The wafer W carried into the wafer heating apparatus 8 is coated with a chemical solution for forming an insulating film as in the second embodiment, and each process is performed in the same procedure as when carried into the wafer heating apparatus 7. Spaces SA to SC are transported and subjected to heat treatment. 14 and 15 show a wafer W that is to be processed in the processing space SA. As indicated by arrows in these drawings, in each processing space, the supplied superheated steam flows in the direction opposite to the wafer W transfer direction along the upper wall surface and the lower wall surface of the processing space. The wafer W is heated by being exposed to the flow of superheated steam, and sublimates generated from the coating film on the wafer W are removed by being pushed away by the flow of superheated steam during the heat treatment. This wafer heating device 8 has the same effect as the wafer heating device 7.

(Fourth embodiment)
Next, a wafer heating apparatus 9 according to the fourth embodiment will be described with reference to FIG. 16 with a focus on differences from the wafer heating apparatus 7 according to the second embodiment. The wafer W transferred to the wafer heating device 9 is coated with a chemically amplified resist and subjected to an exposure process, but has not undergone a development process. That is, in the wafer heating apparatus 9, so-called post-exposure baking (PEB) is performed. The processing spaces SA and SC are configured to be supplied with cooling air for cooling the wafer W to, for example, 23 ° C. instead of superheated steam. The upstream sides of the pipes 31 </ b> A and 31 </ b> B are connected to an air supply source 92 via a cooling unit 91 instead of being connected to the superheated steam generation unit 36. The cooling unit 91 is configured in the same manner as the cooling unit 55. Further, in the pipes 31 </ b> A and 31 </ b> C, a flow rate control unit 93 is interposed on the downstream side of the cooling unit 93. The air supplied to the air supply source is cooled to the set temperature by the cooling unit 91 and supplied to the downstream side of the pipes 31A and 31C. The flow control unit 93 controls the supply and disconnection of the air thus cooled to the processing spaces SA and SC.

  In the processing spaces SA and SC, the cooling air is supplied and exhausted in the same manner as when superheated steam is supplied. Then, the wafer W cooled in the processing space SA is heated in the processing space SB and further cooled in the processing space SC. Thus, the acid catalyzed reaction occurring in the resist is controlled by performing cooling and heating.

  In the fourth embodiment, for example, after cooling and heating processing are performed in the processing spaces SA and SB, respectively, the wafer W may be returned to the processing space SA and cooling may be performed in the processing space SA. Thereafter, the wafer W may be transferred to a transfer means outside the heating device by the lift pins 77A at the entrance of the processing space SA. In this 4th Embodiment, you may comprise the shape of process space SA-SC in the shape similar to 3rd Embodiment. Furthermore, in the first embodiment, PEB may be performed by switching the supply of superheated steam and cooling air from the nozzle 21 to the processing space S.

  The configuration of each part in each of the above embodiments can be applied to each other. For example, also in the second and third embodiments, after processing in the processing spaces SA and SB, the wafer W is returned to the processing space SA for processing, and the wafer W is transferred to the transfer means by the lift pins 77A at the entrance of the processing space SA. May be. Also in the first embodiment, the processing space S is formed in a square shape as in the third embodiment, and a superheated steam flow is formed from one end side to the other end side of the wafer W to heat the wafer W. May be.

  In the second to fourth embodiments, the wafer W may be heated by supplying superheated steam while moving the wafer W without stopping the belt 74. Further, in each embodiment, the number of times of stopping the supply of superheated steam and stopping the exhaust during the heat treatment in each processing space is not limited to one time, and may be performed a plurality of times. The superheated steam may be continuously supplied and exhausted without being performed. Further, in each of the above embodiments, the exhaust gas is stopped after the supply of the superheated steam is stopped so that the superheated steam remaining in the processing space is not liquefied. Good.

  In each embodiment, the air discharged from the air retention spaces 45 to 47 through the exhaust pipe 61 is exhausted by the exhaust means 44, but instead of connecting the exhaust pipe 61 to the exhaust means 44, the air is supplied to the air supply source 54. Connecting. And you may make it circulate between the exhaust pipe 61, the air supply source 54, the supply pipe | tube 51, and the air residence space 45-47 by providing a pump in the exhaust pipe 61. In other words, in this case, air is collected in the air supply source 54 by the exhaust pipe 42, and the collected air is again cooled by the cooling unit 56 and supplied to the air retention spaces 45 to 47. Further, a gas other than air may be supplied to the air retention spaces 45 to 47, or a temperature-adjusted liquid may be supplied.

W, W1, W2 Wafer S, SA, SB, SC Processing space 1, 7, 8, 9 Wafer heating device 11, 71 Processing vessel 12 Lid 13 Main body 18, 19 Rectification member 21 Nozzle 22 Discharge port 24 Exhaust 25 Exhaust port 32 Steam superheater 33 Steam generator 36 Superheated steam generator 45, 46, 47 Air retention space 74 Belt 75 Rotating mechanism 79A to 79D Shutter 100 Controller

Claims (19)

A processing vessel forming a processing space;
A placement section for placing the substrate, provided in the processing container;
Superheated steam supply means for supplying superheated steam for heating the substrate to the processing space;
Exhaust means for exhausting the processing space;
A substrate heating apparatus comprising: The superheated steam supply means comprises a discharge port for supplying superheated steam from the lower center of the substrate placed on the placement unit,
2. The substrate heating apparatus according to claim 1, wherein the exhaust means includes an exhaust port for exhausting air from above the center of the substrate.   The substrate heating apparatus according to claim 1, wherein a plurality of the discharge ports are provided so as to discharge superheated steam toward a peripheral portion of the processing space.   4. The substrate heating apparatus according to claim 1, wherein the processing space is formed in a disk shape having a thickness at a central portion larger than a thickness at a peripheral portion thereof. 5.   5. The substrate heating according to claim 2, wherein a rectifying member is provided in the processing space to surround the discharge port and the exhaust port and regulate a flow of superheated steam. apparatus.   2. The substrate heating apparatus according to claim 1, wherein in the processing space, a discharge port for supplying superheated steam and an exhaust port are respectively opened on one end side and the other end side of the substrate.   7. The substrate heating apparatus according to claim 6, wherein the discharge port is opened up and down on one end side of the substrate, and the exhaust port is opened up and down on the other end side of the substrate.   8. The substrate heating apparatus according to claim 7, wherein the upper wall surface of the processing space and the lower wall surface of the processing space are formed in parallel to the substrate. A partition member for partitioning the processing space into a plurality of lateral directions;
An operation mechanism for operating the partition member between a state in which the processing space is communicated and a state in which the processing space is partitioned;
Transport means for transporting the substrate between the processing spaces;
The substrate heating apparatus according to any one of claims 1 to 8, wherein the superheated steam supply means supplies superheated steam to each processing space individually.   The substrate heating apparatus according to claim 9, wherein a gas for cooling the substrate is supplied to one of the plurality of processing spaces divided instead of the superheated steam. The processing vessel is provided with a fluid retention space for controlling the temperature of the processing space around the processing space,
Fluid supply means for supplying fluid to the fluid retention space;
Removing means for removing fluid from the fluid retention space;
The substrate heating apparatus according to claim 1, wherein the substrate heating apparatus is provided. The processing vessel is provided with a fluid retention space for controlling the temperature for each partitioned processing space,
Supply means for individually supplying fluid to each fluid convection space;
Removing means for individually removing fluid from each fluid retention space;
The substrate heating apparatus according to claim 9 or 10, further comprising: The conveying means includes a belt that also serves as the placement unit, a belt driving mechanism that moves the belt along the arrangement direction of the processing space,
The substrate heating apparatus according to claim 9, further comprising: A step of placing a substrate on a placement portion provided in a processing container forming a processing space;
Supplying superheated steam for heating the substrate to the processing space by superheated steam supply means;
Exhausting the processing space by an exhaust means;
A substrate heating method comprising: Operating a partition member for partitioning the processing space into a plurality of lateral directions between a state where the processing space is communicated by an operation mechanism and a state where the processing space is partitioned;
A step of transferring a substrate between the processing spaces by a transfer means;
Supplying superheated steam to each processing space individually;
The substrate heating method according to claim 14, further comprising:   The substrate heating method according to claim 15, further comprising a step of supplying a gas for cooling the substrate instead of superheated steam to one of the plurality of processing spaces. A step of supplying a fluid to a fluid retention space for controlling the temperature of the processing space provided around the processing space;
Removing fluid from the fluid retention space;
A substrate heating apparatus according to any one of claims 14 to 16, further comprising: Supplying each fluid individually to a fluid retention space for controlling the temperature of each of the partitioned processing spaces provided in the processing container; and
Individually removing fluid from each fluid retention space;
The substrate heating apparatus according to claim 14, further comprising: A storage medium storing a computer program used for a substrate heating apparatus,
A storage medium for performing the substrate heating method according to any one of claims 14 to 18.

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