JP4364105B2 - Heat treatment apparatus and heat treatment method - Google Patents

Description

  The present invention relates to a heat treatment apparatus and a heat treatment method for heat-treating an object to be processed on which a treatment liquid has been applied, formed and exposed.

  For example, in the manufacture of semiconductor devices, a predetermined film is formed on a plate-shaped semiconductor wafer (hereinafter referred to as a wafer) that is an object to be processed, and then a photoresist that is a processing liquid (hereinafter referred to as a resist) is applied. Then, a resist film is formed, the resist film is exposed corresponding to the circuit pattern, and this is developed, so that a circuit pattern is formed by a so-called photolithography technique. In this photolithography technique, a wafer to be processed is processed in a series of main processes: cleaning process → dehydration bake → adhesion (hydrophobization) process → resist application → pre-bake → exposure → bake before development → development → post-bake. A predetermined circuit pattern is formed on the resist layer through the processing.

A conventional pattern forming method using a chemically amplified resist using an acid catalyst in such processing will be described with reference to FIG.
FIG. 6A is a wafer cross-sectional view showing an exposure process for a wafer coated with a resist, and FIG. 6B is a wafer cross-sectional view showing a state after the development process.
First, in pattern formation, a resist R containing an acid generator and a polymer that changes to be alkali-soluble by an acid is applied on the wafer W. The resist R is a KrF resist composed of, for example, an onium salt as an acid generator and a polyvinylphenol protected with a ter-butoxycarbonyl group (tBOC) as a polymer.

Next, the pattern of the mask M is exposed on the resist R as shown in FIG. 6A using a KrF excimer laser. Here, the acid generator generates an acid (hydrogen ion H ⁺ ) when exposed to light.
After the exposure, the wafer W is heated (development before development) before the development process, so that the acid attacks the tBOC group which is a protective group to form a phenolic hydroxyl group. In this reaction, no acid is consumed, and one acid attacks many tBOC groups and the reaction proceeds. Thus, the acid acts as a catalyst, and the sensitivity is increased.
In the subsequent development processing, development is performed with an alkaline developer. Since the exposed portion on the wafer surface is alkali-soluble, a positive resist pattern is formed as shown in FIG.

  By the way, after the exposure process described above, after performing the pre-development baking, if the cooling process is not performed within a short time, the amplification reaction proceeds more than necessary, and the line width and the like formed on the wafer surface is adversely affected. There was a problem of affecting. Furthermore, if the time from the baking process to the cooling process is not constant, the line width varies from wafer to wafer.

In order to solve such a problem, Patent Document 1 (Japanese Patent Application Laid-Open No. 2001-85323) discloses a heat treatment method and a heat treatment apparatus characterized in that a cooling means is provided in a conveying means for an object to be processed.
According to the heat treatment method and heat treatment apparatus disclosed in Patent Document 1, the cooling process can be started in a short time after the heat treatment of the wafer, and the temperature distribution in the wafer surface is made uniform and the product yield is improved. be able to.
JP 2001-85323 A (5th page, left column, 12th line to 6th page, left column, 20th line, FIG. 2)

By the way, since the pre-development baking (heat treatment) is a treatment performed to promote the reaction of the acid, the attack of the protective group by the acid is promoted. Here, as shown in FIG. 7A, the acid (hydrogen ion H +) initially diffuses in a random direction within the range of the mask pattern width d1, and attacks the protective group.
However, since the acid diffusion proceeds not only in the vertical direction but also in the horizontal direction and the diagonal direction, by the end of the heat treatment, as shown in FIG. 7B, the acid diffusion has a pattern width d1. It was progressing beyond. As a result, the circuit pattern width obtained after development was a pattern width d2 larger than the desired pattern width d1 as shown in FIG. 7C.

  That is, in the method and apparatus disclosed in Patent Document 1, it was possible to effectively suppress the chemical reaction that proceeds after the heat treatment of the pre-development bake, but during the heat treatment of the pre-develop bake Since the progress of the chemical amplification reaction cannot be suppressed, there is a technical problem that the line width of the resulting circuit pattern becomes larger than desired.

  The present invention has been made under the circumstances as described above, and in a heat treatment step before the development processing for the object to be processed, which is formed by applying a chemical amplification type processing solution and subjected to exposure processing, a chemical amplification reaction of the processing solution It is an object to provide a heat treatment apparatus and a heat treatment method capable of obtaining a circuit pattern having a desired line width by controlling the above.

In order to solve the above-described problems, a heat treatment apparatus according to the present invention includes a heat treatment apparatus that performs a heat treatment before a development process on a target object that has been subjected to an exposure process with a chemically amplified treatment liquid applied to the surface. A heating unit that heats the object to be processed to a predetermined temperature, a cooling unit that receives the object to be processed that has been heat-treated by the heating unit, and that cools the object to be processed to a predetermined temperature ; A magnetic field generating means for generating a magnetic field in a direction substantially perpendicular to the surface of the surface and reversing the direction of the magnetic field, a heating process by the heating means, and a cooling process by the cooling means are started. And a control means for operating the magnetic field generating means until the processing body reaches a predetermined temperature and for stopping the operation of the magnetic field generating means when the object to be processed reaches the predetermined temperature. Characteristic A.

According to this configuration, by operating the magnetic field generating means, it is possible to control the acid diffusion direction in the chemically amplified processing solution that has been subjected to the exposure processing.
As a result, the acid does not diffuse in the lateral direction but diffuses in a direction perpendicular to the surface of the object to be processed.
In addition, by reversing the vertical direction of the magnetic field perpendicular to the surface of the object to be processed, the acid diffusion direction in the processing liquid can be made uniform in the vertical direction.
Therefore, since it is possible to suppress an excessive amplification of the circuit pattern line width during the heat treatment before development, a desired circuit pattern width is obtained after development, and a fine circuit pattern can be obtained.
Furthermore, since the object to be processed can be cooled immediately after the heat treatment by providing the cooling means, chemical amplification after the heat treatment can be suppressed. Further, the magnetic field generating means can be operated only during the acid diffusion reaction.

In addition, the magnetic field generation means includes one or more coils installed above or below the object to be processed, and current supply means for supplying current to the coils, and the current supply means is the coil. It is desirable to generate a magnetic field by passing an electric current through.
With this configuration, a magnetic field can be generated in a direction orthogonal to the surface of the object to be processed, and the direction of the magnetic field can be reversed periodically or aperiodically by changing the direction of current flow. Can be made.

In order to solve the above-described problems, a heat treatment method according to the present invention is a heat treatment method in which a heat treatment before a development process is performed on an object to be processed which has been subjected to an exposure treatment with a chemically amplified treatment liquid applied to the surface. And a step of heating the object to be processed by performing a step of heating the object to be processed to a predetermined temperature and a step of cooling the object to be processed to a predetermined temperature after the step of heating the object to be processed. A magnetic field is generated in a direction substantially orthogonal to the surface of the object to which the processing liquid is applied, and until the object to be processed reaches a predetermined temperature, and The magnetic field direction is reversed, and the generation of the magnetic field is stopped when the object to be processed is cooled and reaches a predetermined temperature .

According to such a method, it is possible to control the diffusion direction of the acid in the chemically amplified processing solution subjected to the exposure process by the action of the magnetic field. That is, the acid which is a positive ion generated during the heat treatment is affected in the direction of the magnetic flux lines.
As a result, the acid does not diffuse in the lateral direction but diffuses in a direction perpendicular to the surface of the object to be processed.
In addition, by reversing the vertical direction of the magnetic field perpendicular to the surface of the object to be processed, the acid diffusion direction in the processing liquid can be made uniform in the vertical direction.
Therefore, since it is possible to suppress an excessive amplification of the circuit pattern line width during the heat treatment before development, a desired circuit pattern width is obtained after development, and a fine circuit pattern can be obtained.
Furthermore, since the workpiece is cooled immediately after the heat treatment, chemical amplification after the heat treatment can be suppressed. In addition, a magnetic field can be generated only during the acid diffusion reaction.

In the step of generating a magnetic field on the surface of the object to be processed, it is desirable to generate the magnetic field by passing a current through one or a plurality of coils installed above or below the object to be processed.
In this way, a magnetic field can be generated in a direction perpendicular to the surface of the object to be processed, and the direction of the magnetic field can be reversed periodically or aperiodically by changing the direction of current flow. Can do.

  According to the present invention, a circuit pattern having a desired line width is obtained by controlling a chemical reaction of a processing solution in a heat treatment step before a development process on an object to be processed that has been coated and formed with a chemically amplified processing solution. Heat treatment apparatus and heat treatment method can be obtained.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing the overall configuration of a resist coating and developing treatment system including a heat treatment apparatus according to the present invention.
As shown in FIG. 1, the resist coating and developing treatment system 1 can mount, for example, a plurality of cassettes 2 containing, for example, a large number of semiconductor wafers W (hereinafter referred to as wafers) as an object to be processed on one end thereof. The carrier station 3 configured as described above is provided, and an auxiliary arm 4 for carrying in and out the wafer W and positioning the wafer W is provided at the center of the carrier station 3.

  A process station 6 is disposed on the side of the carrier coating 3 side of the resist coating and developing treatment system 1. Furthermore, a main arm 5 is provided as a transfer means for transferring the wafer W from the auxiliary arm 4 while being provided so as to be movable in the length direction at the center. As shown in the figure, the main arm 5 is formed in a substantially horseshoe shape so as to hold the peripheral portion of the wafer W.

  Various processing mechanisms are arranged on both sides of the transfer path of the main arm 5. Specifically, as these processing mechanisms, for example, a brush scrubber 7 for brush cleaning the wafer W and a high-pressure jet cleaning machine 7A for cleaning with high-pressure jet water are provided side by side, and next to the heat treatment apparatus 20. Are stacked and two developing devices 8 are arranged side by side on the opposite side of the transfer path of the main arm 5.

  Further, another process station 6 A is arranged on the side of the process station 6 via a connection unit 9. In this process station 6A, for example, an adhesion processing device 10 for hydrophobizing a photoresist (hereinafter referred to as a resist) on the wafer W is provided, and a cooling device 11 is disposed below the processing device 6A. Yes. Further, two heat treatment apparatuses 20 are stacked and arranged in two rows on the sides of these apparatuses 10 and 11.

  In addition, two resist coating apparatuses 12 for applying a resist to the wafer W are arranged in parallel on the opposite side of the heat treatment apparatus 20 and the adhesion processing apparatus 10 with the transfer path of the main arm 5 interposed therebetween. An exposure device 14 for exposing a predetermined fine pattern to the resist film is provided on the side of the resist coating device 12 via the interface unit 13.

In the resist coating and developing system 1 configured as described above, first, an unprocessed wafer W accommodated in the cassette 2 is taken out by the auxiliary arm 4, and further the brush scrubber 7, high-pressure jet water pressure by the main arm 5. It is conveyed to the machine 7A, where dust and dirt are removed.
The cleaned wafer W is transferred by the main arm 5 to the heat treatment apparatus 20 where heat drying is performed. Thereafter, the wafer W is cooled in the cooling device 11 and further subjected to a hydrophobic treatment in the adhesion processing device 10. After the hydrophobic treatment, the wafer W is transferred to the resist coating device 12, and a resist film is applied and formed on the wafer surface by, for example, spin coating.
In addition, as a photoresist for KrF that is a coating solution, for example, trade name UV135 manufactured by Rohm & Haas can be used.

Then, the wafer W is transferred to the heat treatment apparatus 20 and subjected to a pre-baking process at a predetermined temperature (for example, around 80 ° C.) for a predetermined time in order to evaporate the solvent from the resist film.
Thereafter, the wafer W is cooled to room temperature (about 23 ° C.), for example, and is transferred to the exposure apparatus 14 for exposure processing. The wafer W after the exposure processing is transferred to the heat treatment apparatus 20 and subjected to baking processing (pre-development baking processing) at a predetermined temperature (for example, 140 ° C.) for a predetermined time. The wafer W which has been subjected to the baking process is transferred to the developing device 8, where the developing process is performed, and then transferred again to the heat treatment apparatus 20, where the wafer W is post-baked at a predetermined temperature (50 to 180 ° C.) for a predetermined time. A post-development baking process) is performed, and the developer remaining in the developed resist is evaporated by heating.
Thereafter, the wafer W is transferred to the cooling device 11 and cooled to room temperature (about 23 ° C.), that is, the temperature is adjusted, and then transferred to the next step.

Then, the structure of the heat processing apparatus which concerns on this invention is demonstrated in detail based on FIG. FIG. 2 is a schematic cross-sectional view of the heat treatment apparatus.
A heat treatment apparatus 20 as a heat treatment apparatus according to the present invention receives a heat treatment unit 21 for heat-treating the wafer W transferred by the main arm 5 to a predetermined temperature, a wafer W after the heat treatment, and a predetermined process. And a standby part 22 of a cooling temperature adjusting body 40 as a cooling means for cooling (cooling temperature adjustment) to room temperature (about 23 ° C.).

In the heat processing unit 21, a mounting table 24 having a heating element 23 (heater) as a heating means for mounting and heating the wafer W to a predetermined temperature is held by a holding member 25. A cylindrical shutter 26 is disposed on the outer peripheral side of the mounting table 24 so as to surround the periphery of the mounting table 24 so that it can be moved up and down by an elevating cylinder 27, and above the mounting table 24, A cover 28 having an exhaust port 28a connected to an exhaust device (not shown) is disposed at the upper center.
A magnetic field generating means 50 that generates magnetic field lines in a direction substantially perpendicular to the surface of the wafer W is provided below the cover 28 and above the wafer W placed on the mounting table 24. Yes. The magnetic field generating means 50 is controlled by a control means (not shown) so as to operate only during the pre-development baking heat treatment.

  In this configuration, an inward flange 26 a is provided at the lower end portion of the shutter 26, and when the shutter 26 is raised by driving the elevating cylinder 27, the inward flange 26 a is attached to the lower surface of the mounting table holding member 25. In close contact with the seal packing 29, the shutter 26 surrounds the mounting table 24 to form the processing chamber 30 together with the cover 28, and the shutter 26 descends to pass through the gap between the upper end of the shutter 26 and the lower side of the cover 28. The wafer W can be loaded into and unloaded from the place other than the standby unit 22 on the mounting table 24.

  When forming the processing chamber 30, a gap 31 of about 1 mm is provided between the upper end of the shutter 26 and the cover 28, and air flowing into the processing chamber 30 from the gap 31 is exhausted from the exhaust port 28a. It is made to be done. As described above, since the air flowing into the processing chamber 30 from the upper periphery of the wafer W is discharged from the upper exhaust port 28a, the inflowing air can be prevented from directly touching the wafer W. The heating temperature of the heat treatment can be made uniform, and the heat treatment of the wafer W can be made uniform.

  Also, below the mounting table 24, the wafer W is supported and moved to the mounting table 24 and to a position above the mounting table 24, that is, the wafer W is mounted on the mounting table 24 in which the heater 23 is embedded so as to be separated. Three support pins 32 that move relative to the table 24 are provided on a lifting plate 33 so as to stand concentrically. These support pins 32 are formed of a heat insulating member such as ceramics, fluororesin, or synthetic rubber, for example, and are provided on the mounting table 24 by driving a lifting mechanism 34 including a ball screw mechanism connected to the lifting plate 33. It is configured to move up and down above the mounting table 24 through the through hole 24a.

On the other hand, the cooling temperature adjusting body 40 disposed in the standby unit 22 is configured to cool the wafer W from the lower surface (back surface) of the wafer W moved to the upper position of the mounting table 24 by the support pins 32. ing. In the cooling temperature adjusting body 40, a Peltier element 41 as a refrigerant is embedded, and a heat radiating plate 42 is disposed on the back of the Peltier element 41. Thus, the temperature is lowered and the wafer W can be cooled to a predetermined temperature, for example, room temperature (about 23 ° C.).
In place of the Peltier element 41, a tubular flow path can be built in, and constant temperature water cooled to a predetermined temperature, gas, or the like can be circulated and cooled.

  The cooling temperature adjusting body 40 configured as described above is connected to an air cylinder 46 for horizontal movement through a connected rod 46a, and the cooling temperature adjusting body 40 is driven by the air cylinder 46. It is configured to be able to move forward and backward toward the wafer W at an upper position of 24.

The air cylinder 46 is formed to be movable in the vertical direction by a lifting mechanism (not shown). In this case, the cooling temperature adjusting body 40 is provided with a slit (not shown) for avoiding interference with the three support pins 32 so that the support pins 32 can advance and retract. By providing the slit in this way, the cooling temperature adjusting body 40 is moved toward the wafer W moved to the upper position of the mounting table 24 by the support pins 32, and the cooling temperature adjusting body 40 is formed on the lower surface (back surface) of the wafer W. When the two are brought close to each other, the mounting table 24 and the wafer W are cut off in a region other than the slit, and the cooling temperature of the wafer W can be adjusted in this state.
At this time, the wafer W is thermally blocked from the mounting table 24 by the cooling temperature adjusting body 40, so that there is no possibility of being affected by the heat from the mounting table 24.

In the present embodiment, the cylindrical shutter 26 is moved up and down to form the processing chamber 30 and open the mounting table 24 outward. However, instead of moving the shutter 26 up and down, or the shutter The processing chamber 30 may be similarly formed by moving the cover 28 and the mounting table 24 up and down together with the up-and-down movement of 26.
Further, instead of the cylindrical shutter 26, a wafer loading / unloading opening may be provided on the side wall of the container for accommodating the mounting table 24, and the opening may be opened and closed.
Further, in this embodiment, the cooling temperature adjusting body 40 is moved in a state where the wafer W is supported by the support pins 32, and the cooling temperature adjustment is performed in a non-contact state between the wafer W and the cooling temperature adjusting body 40. However, as indicated by an imaginary line in FIG. 2, the wafer W can be supported by the spacer 48 provided on the upper surface of the cooling temperature adjusting body 40 and the cooling temperature can be adjusted in a proximity state.

Next, the magnetic field generating means 50 will be further described with reference to FIG. FIG. 3 is a schematic diagram showing the configuration of the magnetic field generating means. The magnetic field generation means 50 includes a coil 51 disposed above the wafer W placed on the placement table 24, and a current supply means 52 that supplies an alternating current to the coil 51. The coil 51 is formed by winding an electrical conductor in a cylindrical shape, and the diameter thereof is slightly smaller than the diameter of the wafer W.
In the figure, the coil 51 is a multi-turn coil (solenoid). However, the present invention is not limited to this. If the entire surface of the wafer W can be placed in a magnetic field, it may be a single-turn coil.

In the configuration of the magnetic field generation means 50 shown in FIG. 3, when an alternating current is passed through the coil 51 by the current supply means 52, the current flows in a circular spiral in the coil 51, resulting in the formation of magnetic flux lines L as shown in the figure. The generated magnetic field is generated.
Since the current flowing through the coil 51 is an alternating current, the flowing direction is periodically reversed, and the direction of the magnetic flux line L is reversed according to the direction of the current flowing through the coil 51.
Here, since the coil 51 is disposed above the wafer W, during operation of the magnetic field generating means 50, the resist applied and formed on the surface of the wafer W in the magnetic field generated as described above. R will be placed. That is, as illustrated, the magnetic flux lines L are generated so as to be substantially orthogonal to the surface of the wafer W.

As described above, the magnetic field generation unit 50 is controlled to operate during the pre-development bake while the heat treatment for the wafer W is performed. Preferably, the wafer W is mounted on the cooling temperature adjusting body 40 after the heat treatment at a predetermined temperature (for example, 140 ° C.) from the time when the heat generator 23 starts to generate heat for the heat treatment, and the wafer W is It is controlled to operate until it is cooled to a temperature (eg 40 ° C.).
That is, when the temperature of the wafer W is equal to or higher than a predetermined temperature (for example, 40 ° C.), the reaction of the acid (hydrogen ion H ⁺ ) in the resist is promoted, and the protective group is attacked by the acid. Means 50 are adapted to operate.

Therefore, when the temperature of the wafer W is equal to or higher than a predetermined temperature (for example, 40 ° C.) and the magnetic field generating means 50 is in operation, the mask pattern in the resist R as shown in FIG. Accordingly, the reaction of the acid (hydrogen ion H ⁺ ) is promoted in the exposed portion.
Here, since the resist R is placed in the magnetic field, the force of the magnetic field (magnetic flux line L) acts on the acid (hydrogen ion H ⁺ ) that is a positive ion, and the diffusion direction of the acid is the magnetic flux line L. 4, that is, the vertical direction (direction perpendicular to the surface of the wafer W) as shown in FIG.
At this time, since the direction of the magnetic field is periodically reversed, the direction of acid diffusion in the resist can be made uniform in the vertical direction.
As a result, as shown in the figure, the acid (hydrogen ion H ⁺ ) does not diffuse in the lateral direction, so that the line width of the circuit pattern is not excessively amplified and the desired line width is the dimension d1. As a result of development, a circuit pattern having a line width dimension d1 can be obtained as shown in FIG.

According to the embodiment described above, the diffusion direction of the acid (hydrogen ion H ⁺ ) in the resist R subjected to the exposure process is controlled by operating the magnetic field generating means 50 provided in the heat treatment apparatus 20 in the pre-development baking. Can be controlled.
That is, since the acid which is a positive ion generated during the heat treatment is affected in the direction of the magnetic flux line L, the acid does not diffuse in the lateral direction, but diffuses in the direction perpendicular to the surface of the object to be treated. Can be controlled. Therefore, since unnecessary amplification of the circuit pattern line width during baking before development can be suppressed, a desired circuit pattern width is obtained after development, and a fine circuit pattern can be obtained.

  In addition, in FIG. 5, the modification of the structure of the magnetic field generation means 50 is shown as a schematic diagram. The configuration of the magnetic field generation means 50 shown in FIG. 5 is different from the configuration shown in FIG. 3 only in the coil configuration. As shown in FIG. 5, the coil 53 includes a plurality of coils smaller than the coil 51 shown in FIG. 3 arranged in the horizontal direction.

To each coil arranged in the coil 53, the alternating current from the current supply means 52 is supplied synchronously at the same timing. That is, control is performed so that the current always flows in the same direction for all the coils.
Therefore, in each coil, a magnetic field is generated by the flow of current, but the direction of the magnetic field (magnetic flux line L) is always the same direction so that the adjacent magnetic fields are not canceled out. Has been made.
As described above, according to the modification of the magnetic field generating means 50, by arranging a plurality of small coils to form the coil 53, the strength and magnetic flux density of the magnetic flux lines L with respect to the entire surface of the wafer W are made uniform, A magnetic field can be more uniformly applied to the resist R on the wafer W.

  In FIG. 5, the coil 53 is composed of a total of 16 coils (4 × 4 in length and width). However, the number of coils is not limited, and a smaller or larger number of coils are arranged in the horizontal direction. Thus, the coil 53 may be configured. Also, the arrangement method is not limited to a square shape, and may be arranged in a concentric shape.

In the above embodiment, preferably, the magnetic field generating means 50 is a cooling temperature adjusting body after the heat treatment at a predetermined temperature (for example, 140 ° C.) from the time when the heat generator 23 starts to generate heat for the heat treatment. It is assumed that the wafer W is placed on 40 and controlled to operate until the wafer W is cooled to a predetermined temperature (for example, 40 ° C.).
However, the present invention is not limited to this, and control may be performed by a control unit (not shown) so that the magnetic field generation unit 50 is operated only while the wafer W is heated by the heating element 23.

In the above embodiment, a magnetic field is generated by supplying an alternating current to the coil, and the direction of the magnetic field is cycled according to the characteristics of the alternating current, that is, the characteristic that the magnitude and direction of the current change at regular intervals. An example of reversing is shown.
However, in the magnetic field generating means according to the present invention, the current supplied to the coil is not limited to an alternating current. That is, the current supplied to the coil may be a direct current. In this case, the direction in which the direct current is supplied by the current supply means may be changed periodically or aperiodically, and the direction of the magnetic field may be reversed according to the direction in which the direct current flows. Good.

Moreover, in the said embodiment, although the magnetic field generation means 50 was set as the structure which generate | occur | produces a magnetic field by supplying an electric current to a coil, the magnetic field generation means which concerns on this invention is not limited to it. In other words, any configuration that can generate a magnetic field in a direction substantially orthogonal to the surface of the wafer W and can reverse the direction of the magnetic field may be used. For example, a configuration using a magnet or the like may be used.
In addition, the coils 51 and 53 that generate a magnetic field in the magnetic field generation unit 50 are arranged above the wafer W, but the present invention is not limited thereto, and may be arranged below the wafer W. That is, any member (coil, magnet, etc.) that generates a magnetic field in the magnetic field generating means may be arranged above or below the object to be processed (wafer).

Further, the overall configuration of the resist coating and developing treatment system 1 shown in FIG. 1 in the above embodiment is merely an example, and is not limited thereto.
In the above-described embodiment, the case where the KrF resist film is formed on the wafer is described as an example. However, the present invention is not limited to this, and a target object on which a processing liquid such as a chemically amplified type ArF resist is applied is formed. It can be applied to any heat treatment apparatus for heat treatment.
As the processing liquid in the present invention, in addition to the resist, liquids such as an interlayer insulating material, a dielectric material, and a wiring material are also possible. In addition, the object to be processed in the present invention is not limited to a wafer but may be a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed substrate, or the like.

  The present invention can be applied to a heat treatment apparatus for heat-treating a wafer or a semiconductor wafer on which a treatment liquid is applied and formed, and can be suitably used in the semiconductor manufacturing industry, the electronic device manufacturing industry and the like.

FIG. 1 is a perspective view showing the overall configuration of a resist coating and developing treatment system including a heat treatment apparatus according to the present invention. FIG. 2 is a schematic cross-sectional view of a heat treatment apparatus according to the present invention. FIG. 3 is a schematic diagram showing the configuration of the magnetic field generating means provided in the heat treatment apparatus of FIG. FIG. 4 is a wafer cross-sectional view showing the state of the resist in the heat treatment step in the heat treatment apparatus of FIG. FIG. 5 is a schematic diagram showing a modification of the magnetic field generating means provided in the heat treatment apparatus of FIG. FIG. 6 is a wafer cross-sectional view for explaining a conventional pattern forming method using a chemically amplified resist using an acid catalyst. FIG. 7 is a cross-sectional view of a wafer showing the state of a resist in a conventional heat treatment process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Resist coating and development processing system 20 Heat processing apparatus 23 Heating body (heating means)
40 Cooling temperature adjuster (cooling means)
50 Magnetic field generation means 51 Coil 52 Current supply means 53 Coil L Magnetic flux line R Photoresist (treatment liquid)
W wafer (object to be processed)

Claims (4)

In a heat treatment apparatus for performing a heat treatment before a development process on a target object that has been subjected to a chemical amplification type processing solution applied to the surface and subjected to an exposure process,
Heating means for heating the object to be treated to a predetermined temperature;
A cooling means for receiving the object to be processed that has been heat-treated by the heating means and cooling the object to be processed to a predetermined temperature;
A magnetic field generating means for generating a magnetic field in a direction substantially orthogonal to the surface of the object to be processed to which the processing liquid has been applied, and reversing the direction of the magnetic field;
While the heat treatment by the heating means and the cooling treatment by the cooling means are started and until the object to be processed reaches a predetermined temperature, the magnetic field generating means is operated, and the object to be processed is And a control means for stopping the operation of the magnetic field generating means when the temperature is reached . The magnetic field generation means includes one or a plurality of coils installed above or below the object to be processed, and current supply means for supplying current to the coils.
2. The heat treatment apparatus according to claim 1, wherein the current supply means generates a magnetic field by causing a current to flow through the coil. In a heat treatment method in which a heat treatment before development processing is performed on an object to be processed by applying a chemically amplified processing liquid on the surface and subjected to exposure processing,
Heating the object to be treated to a predetermined temperature;
After the step of heating the object to be processed, the step of cooling the object to be processed to a predetermined temperature,
During the step of heating the object to be processed and until the object to be processed is cooled and the object to be processed reaches a predetermined temperature, the surface of the object to be processed on which the treatment liquid is applied is substantially orthogonal. To generate a magnetic field in the direction of reversing, and reverse the direction of the magnetic field,
A heat treatment method characterized by stopping generation of a magnetic field when the object to be treated is cooled and reaches a predetermined temperature. The step of generating a magnetic field on the surface of the object to be processed includes:
4. The heat treatment method according to claim 3 , wherein a magnetic field is generated by passing a current through one or a plurality of coils installed above or below the object to be processed.

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