JP2011070910A - Electron source array, and imaging device and display device equipped with the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron source array and, an imaging device and a display device promoting micronization of a pixel size without spoiling response characteristics of the pixel. <P>SOLUTION: The imaging device 10 includes a vertical scanning circuit 11, a horizontal scanning circuit 12, the electron source array 20, and a light incidence board 30. The electron source array 20 has a plurality of pixels 21 arranged in a matrix. Each pixel 21 includes a cathode 22 as an electron source, an extraction electrode 23 extracting electrons of the cathode 22, and a transistor 24 driving the cathode 22 and is configured such that: in an ON state of the transistor 24 where the vertical scanning circuit 11 supplies voltage to a gate electrode of the transistor 24, the cathode 22 radiates electrons at a first voltage supplied from the horizontal scanning circuit 12; and the cathode 22 stops radiating the electrons at a second voltage supplied from the horizontal scanning circuit 12. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an electron source array in which electron sources that emit electrons according to a supply voltage are arranged in a matrix, and an imaging device and a display device including the same.

  In recent years, there has been proposed an imaging apparatus including an electron source array in which cold cathode electron sources are arranged in a matrix. As an electron source of a cold cathode, a Spindt-type element, a surface conduction type element, an element having a metal-insulator-metal structure or a metal-insulator-semiconductor structure, etc. are known. A Spindt-type element having a cathode is widely known (for example, see Patent Document 1).

  FIG. 6A is a perspective view conceptually showing a conventional electron source array 2 formed on the substrate 1, and FIG. 6B is a diagram showing the configuration thereof. As shown in FIGS. 6A and 6B, the conventional electron source array 2 is an array in which pixels 5 each having a cone-shaped cathode 6, an extraction electrode 7, and a driving element 8 are arranged in a two-dimensional manner. It is. In FIG. 6B, only one set of the cathode 6 and the extraction electrode 7 is shown in one pixel 5, but in order to obtain a large amount of emitted electrons and to suppress variations in the amount of emitted electrons for each pixel, A plurality of sets of cathodes 6 and extraction electrodes 7 are formed in one pixel 5. A constant voltage is applied to the extraction electrode 7, and the drive element 8 in the pixel 5 is driven by signals from the connected vertical scanning circuit 3 and horizontal scanning circuit 4 to control the potential of the cathode 6. Thus, the electron emission from the cathode 6 is controlled. Since the load on the driving element 8 is reduced to one pixel, the driving speed of the pixel 5 can be improved.

  By the way, in the conventional electron source array 2, in order to improve the integration density of the cathodes 6, the driving elements 8 are formed on the silicon wafers or glass substrates in the sections to be the respective pixels 5, and then a Spindt type cold cathode is laminated thereon. It is produced in the process of. For this reason, one of the factors hindering the miniaturization of the pixel 5 for high definition is the size of the driving element 8 for each pixel 5. In the active drive type electron source array 2, when the pixel 5 is not selected, in order not to emit electrons from the pixel 5, the potential of the cathode 6 is set to the cutoff voltage (the potential difference between the cathode 6 and the extraction electrode 7 is set to the electron. It is necessary to fix the voltage to be equal to or lower than the emission threshold voltage (see FIG. 7).

  For this reason, conventionally, the drive element structure of each pixel has an inverter (FIG. 8 (a)) in which two transistors are arranged in a complementary manner, or an inverter (FIG. 8 (b)) in which a resistor and one transistor are combined. Has been used. However, in these former driving elements, the former requires an area for forming p-type and n-type transistors in the pixel and the wiring becomes complicated. In the latter, the high resistor in the pixel is a transistor. Since a high resistance value is required and an area is required to reduce the reactive current at the time of turning on the pixel, miniaturization of the pixel size has been hindered.

  Further, in order to reduce the pixel size, for example, as shown in FIG. 9A, it is possible to adopt a transistor configuration of one pixel with a reduced number of elements and wires. In this case, since the drain potential of the transistor connected to the cathode 6 becomes floating when the pixel is not selected (FIG. 9B), the pixel from the on state (electron emission) to the off state (electron non-emission). Response is slow. This is because parasitic capacitance exists in the drain of the transistor and the emitter of the cathode 6 (FIG. 9 (c)), and when the transistor is turned off and the drain is floated, the parasitic capacitance includes radiation from the cathode 6. This is because charging is started through the current, and electrons are emitted from the cathode 6 until the cathode potential rises to the cutoff potential. In particular, as the cathode potential increases and the cathode potential increases, the emission current decreases rapidly (see FIG. 7). In the case of a single pixel configuration, the electron emission is completely stopped after the pixel is set to the OFF state. There is a problem that a long time is required and the response characteristic of the pixel 5 deteriorates.

JP 2000-48743 A

  The present invention has been made in view of the above-described circumstances, and provides an electron source array, an imaging device, and a display device that can reduce the pixel size without impairing the response characteristics of the pixel. With the goal.

  The electron source array of the present invention is an electron source array including an electron source and one switching element in each of a plurality of pixels arranged in a matrix, and the switching element sets a potential of the electron source. A conduction state in which a potential setting voltage is supplied to the electron source; and a cutoff state in which the potential setting voltage is not supplied to the electron source. The electron source is configured to have the potential in the conduction state of the switching element. When the first voltage is supplied as the setting voltage, electrons are emitted, and when the second voltage is supplied as the potential setting voltage, the electrons are not emitted.

  With this configuration, the electron source array of the present invention can instantaneously switch the voltage supplied to the electron source from the voltage at which the electron source can emit electrons to the voltage at which electrons cannot be emitted, so that one transistor is provided for each pixel. Even in the configuration including the electron emission, the emission of electrons can be stopped instantaneously. Therefore, the electron source array of the present invention can reduce the pixel size without impairing the response characteristics of the pixel.

  In addition, with this configuration, the electron source array of the present invention does not require complementary arrangement of transistors and additional installation of resistors in the pixel unlike the conventional one, and if one transistor is provided for each pixel. Therefore, it is possible to reduce the pixel size.

  In the electron source array of the present invention, the switching element is connected to a gate electrode to which a selective scanning voltage for selective scanning in a row unit is supplied, a source electrode to which the potential setting voltage is supplied, and the electron source. A transistor including a drain electrode is preferable.

  The electron source array of the present invention further includes an extraction electrode to which an extraction voltage for extracting electrons from the electron source is supplied, and the first voltage is an electron emission threshold value indicating a voltage at which the electron source starts to emit electrons. The potential difference obtained by subtracting the electron source voltage from the extraction voltage is larger than the voltage, and the second voltage is determined by subtracting the electron source voltage from the extraction voltage. It has a configuration that is determined by a voltage smaller than the threshold voltage.

  With this configuration, since the electron source array of the present invention can instantaneously stop the emission of electrons by one transistor included in each pixel, the pixel size can be reduced without impairing the response characteristics of the pixel. Can be planned.

  An image pickup apparatus according to the present invention includes an electron source array, a selection scanning voltage supply unit that supplies a selection scanning voltage for selectively scanning the switching elements in units of rows, a potential setting voltage supply unit that supplies the potential setting voltage, and a subject. And a transparent substrate on which light from the transparent substrate is formed; a transparent electrode formed on the transparent substrate; and a photoelectric conversion film formed on the transparent electrode and disposed opposite to the electron source array. Yes.

  With this configuration, the imaging apparatus of the present invention can instantaneously stop the emission of electrons by one transistor included in each pixel, so that the pixel size can be reduced without impairing the response characteristics of the pixel. be able to.

  The display device according to the present invention includes an electron source array, a selection scanning voltage supply unit that supplies a selection scanning voltage for selectively scanning the switching elements in units of rows, a potential setting voltage supply unit that supplies the potential setting voltage, A transparent substrate that passes through the transparent substrate, a transparent electrode formed on the transparent substrate, and a phosphor formed on the transparent electrode and disposed opposite to the electron source array, and the potential setting voltage supply means includes the The first voltage is a voltage that is amplitude-modulated by a video signal or a voltage pulse that is pulse-width modulated.

  With this configuration, in the display device of the present invention, the electron source array supplies the voltage of the amplitude-modulated video signal or the voltage of the pulse-width modulated voltage pulse in the conductive state of the switching element. An image with a corresponding luminance can be displayed, and the pixel size can be reduced without impairing the response characteristics of the pixel.

  The present invention can provide an electron source array, an imaging device, and a display device that have an effect of miniaturizing the pixel size without impairing the response characteristics of the pixel.

The figure which shows the structure of the imaging device in 1st Embodiment of this invention. The figure which shows the vertical scanning pulse signal which a vertical scanning circuit outputs, and the horizontal scanning pulse signal which a horizontal scanning circuit outputs in the imaging device in 1st Embodiment of this invention. Explanatory drawing of operation | movement at the time of switching a pixel from an ON state to an OFF state in the imaging device in 1st Embodiment of this invention. Explanatory drawing of operation | movement of the horizontal scanning circuit in the vertical scanning line which the vertical scanning circuit finished vertical scanning in the imaging device in 1st Embodiment of this invention. The figure which shows the structure of the display apparatus in 2nd Embodiment of this invention. Configuration diagram of conventional electron source and explanatory diagram of cut-off voltage Diagram showing conventional drive element structure Explanatory drawing of the problem in the conventional drive element made into 1 pixel 1 transistor structure Explanatory drawing of the subject in the conventional drive element made into the transistor structure of 1 pixel 1 element which reduced the number of elements and wiring

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
First, the configuration of the imaging apparatus according to the first embodiment of the present invention will be described.

  As shown in FIG. 1, the imaging apparatus 10 according to the present embodiment includes a vertical scanning circuit 11, a horizontal scanning circuit 12, an electron source array 20, and a light incident substrate 30, and is disposed between the electron source array 20 and the transparent substrate 31. Is kept in a vacuum.

  The vertical scanning circuit 11 sequentially selects the vertical scanning lines V1 to V3 by outputting a pulse signal. The horizontal scanning circuit 12 can drive the pixels 21 in the vertical scanning lines V1 to V3 selected by the vertical scanning circuit 11 by the horizontal scanning lines H1 to H4 by outputting a pulse signal. The vertical scanning circuit 11 constitutes a selective scanning voltage supply unit according to the present invention. Further, the horizontal scanning circuit 12 constitutes a potential setting voltage supply unit according to the present invention.

  The electron source array 20 includes a plurality of pixels 21 arranged in a matrix, and the light incident substrate 30 includes a transparent substrate 31, a transparent electrode 32, and a photoelectric conversion film 33. In order to simplify the description, in the present embodiment, the number of pixels in one row is four and the number of pixels in one column is three.

  Each pixel 21 includes, for example, a cathode 22 as an electron source composed of a cone-shaped Spindt element, an extraction electrode 23 that extracts electrons from the cathode 22, and a transistor 24 that drives the cathode 22.

  The extraction electrode 23 has a hole through which electrons pass, and is supplied with an extraction voltage Vh for extracting electrons.

  For example, when a Si substrate is used, the transistor 24 is configured by a MOS transistor and includes a gate electrode (G), a source electrode (S), and a drain electrode (D). As shown in FIG. 1B, the gate electrode of the transistor 24 is connected to the vertical scanning circuit 11, the source electrode is connected to the horizontal scanning circuit 12, and the drain electrode is connected to the cathode 22. The transistor 24 constitutes a switching element according to the present invention.

  The transparent substrate 31 is made of, for example, a glass substrate, and the light of the subject enters from one surface. A transparent electrode 32 that transmits incident light and a photoelectric conversion film 33 that converts incident light into electric charges are formed on the other surface of the transparent substrate 31. A power source (not shown) is connected to the transparent electrode 32 and is kept at a positive potential.

  With this configuration, in the imaging device 10, an avalanche phenomenon occurs in which electron-hole pairs are generated in the film by light incident on the photoelectric conversion film 33 and holes are multiplied. When the generated holes recombine with electrons arriving from the cathode 22, a current flows so as to compensate for the electrons annihilated by the recombination, so that this current is taken out from the transparent electrode 32 and photoelectric conversion is performed by detecting the current value. Light incident on the film 33 can be converted into an electrical signal. Therefore, the imaging device 10 drives the cathodes 22 corresponding to the respective pixels 21 in a dot-sequential manner, and detects the current value obtained when each of the cathodes 22 is driven in time series, thereby determining the amount of light received by each pixel 21. It is possible to generate imaging signals that are individually represented.

  Next, the operation of the electron source array 20 in the present embodiment will be described with reference to FIGS.

  In FIG. 2, a vertical scanning pulse signal output from the vertical scanning circuit 11 and a horizontal scanning pulse signal output from the horizontal scanning circuit 12 are shown.

  As shown in FIG. 2, the gate voltage applied when the vertical scanning circuit 11 selects any one of the vertical scanning lines V1 to V3 is expressed as Vgon, and the gate voltage applied when not selected is expressed as Vgoff. Here, the voltage Vgon corresponds to the selected scanning voltage according to the present invention. Further, the source voltage that the horizontal scanning circuit 12 applies when any one of the horizontal scanning lines H1 to H4 is selected is expressed as Vson, and the source voltage that is applied when it is not selected is expressed as Vsoff. The voltage of the horizontal scanning pulse signal output from the horizontal scanning circuit 12 corresponds to the potential setting voltage according to the present invention. The voltage Vson and the voltage Vsoff correspond to the first and second voltages according to the present invention, respectively.

  The vertical scanning circuit 11 selects the vertical scanning line V1 for a predetermined time with Vgon and then deselects it with Vgoff. Subsequently, the vertical scanning circuit 11 selects the vertical scanning line V2 for a predetermined time using Vgon, and then deselects it using Vgoff. Similarly, the vertical scanning line V3 is selected or not selected.

  When the vertical scanning circuit 11 selects the vertical scanning line V1, the horizontal scanning circuit 12 sequentially applies source voltages Vson and Vsoff to the transistors 24 in the vertical scanning line V1 in the horizontal scanning lines H1 to H4. Similarly, when the vertical scanning circuit 11 selects the vertical scanning lines V2 and V3, the horizontal scanning circuit 12 sequentially selects the transistors 24 on these lines.

  Next, the setting of each voltage will be described. In the following description, it is assumed that the extraction voltage Vh = 50V supplied to the extraction electrode 23 and the electron emission threshold voltage Vth = 30V indicating the voltage at which the cathode 22 starts electron emission.

  First, regarding Vgon in the vertical scanning pulse signal, the value of Vgon−Vsoff is equal to or higher than the threshold voltage of the transistor 24 so that the transistor 24 can be turned on (conductive state) even when Vsoff is applied to the source of the transistor 24. Vgon> Vsoff is set so that In this embodiment, Vgon = 40V. Vgoff is set to Vgoff≈Vson so that the transistor 24 is equal to or lower than the threshold voltage of the transistor 24 so that the transistor 24 can be kept off (non-conductive state) even when Vson is applied to the source. In this embodiment, Vgoff = 0V.

  Next, Vsoff in the horizontal scanning pulse signal is set so that the potential Vd of the cathode 22 connected to the drain satisfies Vh−Vd <Vth when the transistor 24 is in the ON state. Vth is a threshold voltage of the electron emission of the cathode 22, and the electron emission is cut off when the potential difference between the cathode 22 and the extraction electrode 23 becomes a voltage lower than this. The voltage applied to the source when the transistor 24 is in the on state is reflected in the drain, but when the transistor 24 as the driving element is a MOS transistor made of a Si substrate or the like, when the transistor 24 is in the on state, The high voltage Vsoff applied to the source is not applied to the drain as it is, but Vd = Vsoff, but Vd <Vsoff due to the back gate effect. If this difference is referred to as a differential voltage Vbg due to the back gate effect, in order to cut off the electron emission, it is necessary to set Vsoff so that Vh− (Vsoff−Vbg) <Vth is satisfied. In this embodiment, when the extraction voltage Vh = 50V, the electron emission threshold voltage Vth = 30V, and Vbg = 10V, Vsoff = 35V is set. As for Vson, Vgoff≈Vson is set as described above. In this embodiment, Vson = 0V.

  Next, when the vertical scanning circuit 11 selects a certain vertical scanning line, the horizontal scanning circuit 12 changes the pixel 21 on the vertical scanning line from an on state (electron emission) to an off state (electron non-emission). The operation at the time of switching will be described with reference to FIG.

  As shown in FIG. 3A, when Vgon = 40V is supplied to the gate electrode and the transistor 24 is in the ON state, when Vson = 0V is supplied to the source electrode, the gap between the cathode 22 and the extraction electrode 23 is increased. The potential difference is 50 V, and electrons are emitted from the cathode 22.

  Here, as shown in FIG. 3B, when the voltage supplied to the source electrode is switched from Vson = 0 V to Vsoff = 35 V, the transistor 24 is in an on state, so that the transistor 24 passes through the source electrode and the drain electrode. The cathode 22 is supplied with a voltage of Vsoff−Vbg = 25V. At this time, the potential difference between the cathode 22 and the extraction electrode 23 is 25V, and this voltage is smaller than the electron emission threshold voltage Vth = 30V. No electrons are emitted from 22.

  As described above, in this embodiment, by setting Vsoff so that Vh− (Vsoff−Vbg) <Vth, the horizontal scanning circuit 12 switches the pixel 21 from the on state to the off state. The electron emission can be stopped instantaneously.

  Next, the operation of the horizontal scanning circuit 12 in the vertical scanning line where the vertical scanning circuit 11 has finished vertical scanning will be described with reference to FIG.

  As shown in FIGS. 4A and 4B, in the vertical scanning line in which the vertical scanning circuit 11 finishes the vertical scanning, Vgoff = 0 V is supplied to the gate electrode of the transistor 24, and the transistor 24 Is in an off state (blocking state). At this time, since the voltage of (Vsoff−Vbg) given from the source electrode shown in FIG. 3B is held in the parasitic capacitance, the horizontal scanning circuit 12 scans again horizontally and Vson = 0V is applied to the source electrode. Even if supplied, the cathode 22 does not emit electrons.

  As described above, according to the imaging device 10 of the present embodiment, the voltage Vson supplied by the horizontal scanning circuit 12 in the ON state of the transistor 24 in which the vertical scanning circuit 11 supplies the voltage Vgon to the gate electrode of the transistor 24. The cathode 22 emits electrons, and the cathode 22 can instantaneously stop the emission of electrons by the voltage Vsoff supplied by the horizontal scanning circuit 12, so that even when each pixel 21 includes one transistor 24, the pixel 21 It is possible to improve the response characteristics.

  Further, according to the imaging device 10 in the present embodiment, it is not necessary to perform the complementary arrangement of the transistor 24 or the additional installation of the resistor in the pixel 21 unlike the conventional one, and one pixel 24 is provided for each pixel 21. Therefore, the pixel size can be reduced.

(Second Embodiment)
FIG. 5 is a diagram showing a configuration of a display device according to the second embodiment of the present invention. Note that the display device 40 in the present embodiment is obtained by changing a part of the configuration of the imaging device 10 in the first embodiment, and the same components are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 5, the display device 40 in the present embodiment includes a vertical scanning circuit 11, a video signal output circuit 41, an electron source array 20, and an anode substrate 50, and between the electron source array 20 and the anode substrate 50. Is kept in a vacuum.

  The video signal output circuit 41 is an alternative to the horizontal scanning circuit 12 in the first embodiment. The video signal output circuit 41 is connected to the pixels 21 on the vertical scanning lines V1 to V3 selected by the vertical scanning circuit 11 via the horizontal scanning lines H1 to H4. An analog video signal is output. The video signal output circuit 41 constitutes a potential setting voltage supply unit according to the present invention.

  In the transistor 24 of the electron source array 20, the configuration in which the vertical scanning circuit 11 and the cathode 22 are connected to the gate electrode and the drain electrode, respectively, is the same as that of the first embodiment. A difference from the first embodiment is that, in the on state, a voltage amplitude-modulated by a video signal is input to the source electrode as the voltage Vson. In order to control the cathode potential Vd of the pixel 21 in the on state to control the amount of electron emission, the video signal output circuit 41 modulates Vson to an amplitude value between 0 V and Vsoff. Vsoff is set to satisfy the conditions shown in FIG. 3B in the first embodiment.

  The anode substrate 50 includes a transparent substrate 51, a transparent electrode 52, and a phosphor 53, and a power source (not shown) is connected to the transparent electrode 52 so that an anode voltage is supplied.

  With this configuration, in the display device 40 according to the present embodiment, in the on-state pixel 21 on the vertical scanning line selected by the vertical scanning circuit 11, an amount of electron beam corresponding to the voltage at which the cathode 22 is amplitude-modulated by the video signal. The phosphor 53 can emit light having a luminance corresponding to the amount of electron beam. After the light emission, Vsoff is supplied to the source electrode of the transistor 24, and the pixel 21 can be instantaneously turned off from the on state of the transistor 24.

  Further, as a so-called line sequential operation, if Vson is applied simultaneously to the sources of all the transistors 24 on the vertical scanning line selected by the vertical scanning circuit 11, the time for one pixel 21 to emit electrons can be lengthened. The brightness of the body 53 can be increased. In this case, Vsoff is applied using a blanking period immediately before moving to the next vertical scanning line, and electron emission from the pixel 21 is turned off.

  Further, the Vson applied to the source is not limited to the amplitude-modulated video signal, but may be a pulse width modulated with a video signal having a potential of 0 V and Vsoff.

  As described above, according to the display device 40 in the present embodiment, the analog signal output from the video signal output circuit 41 in the on state of the transistor 24 in which the vertical scanning circuit 11 supplies the voltage Vgon to the gate electrode of the transistor 24. The cathode 22 emits electrons by inputting the voltage of the video signal to the source electrode, and the cathode 22 can instantaneously stop the emission of electrons by the voltage Vsoff output from the video signal output circuit 41. In addition to displaying an image with a brightness corresponding to the above, the response characteristics of the pixel 21 can be improved.

  In addition, according to the display device 40 in the present embodiment, it is not necessary to perform complementary arrangement of the transistor 24 or additional installation of resistors in the pixel 21 unlike the conventional device, and one transistor 24 is provided for each pixel 21. Therefore, the pixel size can be reduced.

DESCRIPTION OF SYMBOLS 10 Imaging device 11 Vertical scanning circuit (selection scanning voltage supply means)
12 Horizontal scanning circuit (potential setting voltage supply means)
20 Electron source array 21 Pixel 22 Cathode (electron source)
23 Extraction electrode 24 Transistor (switching element)
30 Light Incident Substrate 31 Transparent Substrate 32 Transparent Electrode 33 Photoelectric Conversion Film 40 Display Device 41 Video Signal Output Circuit (Potential Setting Voltage Supply Unit)
50 Anode substrate 51 Transparent substrate 52 Transparent electrode 53 Phosphor

Claims (5)

An electron source array including an electron source and one switching element in each of a plurality of pixels arranged in a matrix,
The switching element has a conduction state in which a potential setting voltage for setting the potential of the electron source is supplied to the electron source, and a cutoff state in which the potential setting voltage is not supplied to the electron source,
The electron source emits electrons when the first voltage is supplied as the potential setting voltage in the conductive state of the switching element, and emits the electrons when the second voltage is supplied as the potential setting voltage. An electron source array characterized by not emitting radiation.   The switching element is a transistor including a gate electrode to which a selective scanning voltage for selective scanning in units of rows is supplied, a source electrode to which the potential setting voltage is supplied, and a drain electrode connected to the electron source. The electron source array according to claim 1. An extraction electrode to which an extraction voltage for extracting electrons from the electron source is supplied;
The first voltage is determined by a voltage at which a potential difference obtained by subtracting the voltage of the electron source from the extraction voltage is larger than an electron emission threshold voltage indicating a voltage at which the electron source starts electron emission.
3. The second voltage is defined by a voltage in which a potential difference obtained by subtracting the voltage of the electron source from the extraction voltage is smaller than the electron emission threshold voltage. The electron source array described in 1.   4. The electron source array according to claim 1, a selection scanning voltage supply unit that supplies a selection scanning voltage for selectively scanning the switching elements in units of rows, and the potential setting voltage is supplied. Potential setting voltage supply means, a transparent substrate on which light from a subject is incident, a transparent electrode formed on the transparent substrate, and a photoelectric conversion film formed on the transparent electrode and disposed opposite to the electron source array An imaging apparatus comprising: 4. The electron source array according to claim 1, a selection scanning voltage supply unit that supplies a selection scanning voltage for selectively scanning the switching elements in units of rows, and the potential setting voltage is supplied. A potential setting voltage supply means, a transparent substrate that transmits light, a transparent electrode formed on the transparent substrate, and a phosphor formed on the transparent electrode and disposed opposite to the electron source array,
The display device according to claim 1, wherein the potential setting voltage supply means supplies, as the first voltage, a voltage that is amplitude-modulated by a video signal or a voltage pulse that is pulse-width modulated.

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