JP2011063847A - Vacuum film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum film deposition system where deterioration and corrosion caused by cleaning treatment in a heating mechanism such as a heater in a chamber are prevented without requiring temperature control upon the cleaning, working time accompanying temperature control is made needless, and reduction in the working rate therein is suppressed. <P>SOLUTION: In the vacuum film deposition system, the outer circumference of a heating mechanism is covered with an inert gas upon cleaning, so as to prevent the contacting of cleaning plasma with high reactivity or radicals generated by the plasma with the heating mechanism, thus, by the cleaning treatment, deterioration and corrosion are prevented. A protective mechanism is provided with an inert gas introduction mechanism introducing an inert gas into the circumferential space of the heater, and, upon the cleaning, introduces an inert gas, and spatially separates the heating mechanism from the cleaning gas plasma or radicals, so as to protect the heater. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a vacuum film forming apparatus, and can be applied to apparatuses such as a sputtering apparatus, a CVD apparatus, an ashing apparatus, an etching apparatus, an MBE apparatus, and a vapor deposition apparatus, and more particularly to cleaning of a vacuum chamber.

  In a vacuum film forming apparatus such as a sputtering apparatus, a CVD apparatus, an ashing apparatus, an etching apparatus, an MBE apparatus, or a vapor deposition apparatus, the substrate may be heated to a predetermined temperature. As a heating mechanism for heating the substrate, one using a heating element such as a lamp heater or a sheathed heater is known.

  In various processes, a process gas corresponding to the type of process is introduced into the chamber. For example, a film forming gas is introduced into the chamber in the film forming process, and a cleaning gas is introduced into the chamber in the cleaning process.

  The cleaning process is a process that removes unnecessary thin films that adhere to the mounting table and inner wall surface in the chamber by the film formation process, and prevents contamination of the substrate surface caused by peeling of the film attached by this process. The yield can be improved. Also during cleaning, heating is performed by driving a heating mechanism in the same manner as during film formation in order to increase the cleaning rate.

  As the cleaning gas (etching gas), for example, a halogen-based gas such as a Cl-based gas, an F-based gas, or a ClF-based gas is used. It is known that this cleaning is chemically active and highly reactive, and the gas reactivity depends on the temperature at the time of cleaning, and the higher the temperature, the higher the reactivity. (Patent Document 1)

  FIG. 6 is a diagram for explaining a schematic configuration of a conventional vacuum film forming apparatus. In FIG. 6, a vacuum film forming apparatus 101 has a susceptor 105 that places and supports a substrate 100, such as a wafer, in a vacuum chamber 102, and a high-frequency electrode that is disposed at a position facing the susceptor 105. 103 and a heating mechanism 110 that heats the susceptor 105.

  A CVD material gas for film formation or a cleaning gas for cleaning is introduced into the vacuum chamber 102 from a gas introduction unit 106. For example, the gas can be introduced through the opening 103 a formed in the high-frequency electrode 103.

  High-frequency power is supplied to the high-frequency electrode 103 from a high-frequency power source 104 to generate plasma (or radial) of a CVD material gas or a cleaning gas introduced into the vacuum chamber 102 to perform film formation or cleaning.

  The heating mechanism 110 is disposed to face the surface of the susceptor 105 opposite to the surface on which the substrate 100 is placed. The heating mechanism 110 includes a heater 110a and a reflector 110b (heater reflector) that reflects heat emitted from the heater 110a to the susceptor 105 side, and raises the temperature of the substrate 100 placed by heating the susceptor 105. , Improve the reactivity of film formation or cleaning.

  The CDV material gas and the cleaning gas introduced into the vacuum chamber 102 are exhausted to the outside through the exhaust unit 107 formed in the vacuum chamber 102.

  In Patent Document 1, it is pointed out that, during cleaning, if the temperature of the mounting table is too high, the mounting table is corroded by the etching gas to shorten its life or become a source of particles.

  And, as a method of solving the corrosion problem at the time of cleaning, there is a method of lowering the temperature at the time of cleaning and raising the temperature of the mounting table after the cleaning process, but this method has a problem that it takes time to raise and lower the temperature. It is pointed out that there is.

  Patent Document 1 proposes a configuration in which the mounting table itself or the surface thereof is formed of a material that is resistant to corrosion with respect to the cleaning gas, thereby improving the corrosion resistance of the mounting table.

  Further, for example, Patent Document 2 proposes a configuration that eliminates the need for cleaning the chamber itself.

  In Patent Document 2, in a CVD reactor apparatus, a substrate front surface side and a substrate back surface side are spatially separated by a substrate holding member in the reactor, and only a space on the substrate surface side is filled with a gas containing a CVD source gas. The space on the back side of the substrate is filled with a gas that does not participate in film formation, such as an inert gas that does not contain a CVD source gas, the pressure on the substrate front side is low, the pressure on the back side of the substrate is high, and the back side of the substrate An arrangement is disclosed in which an inert gas is allowed to flow out through a gap from the substrate surface side to prevent the CVD source gas from coming into contact with the substrate rear surface side.

  FIG. 7 is a diagram for explaining a schematic configuration of the CVD reactor apparatus disclosed in Patent Document 2. As shown in FIG. In FIG. 7, the chamber 202 provided in the CVD reactor apparatus 200 is spatially separated into two parts, a space part 202 a and a space part 202 b, with the wafer 100 interposed therebetween. The back side of the wafer 100 is heated through the light irradiation window 210 in the space 202b.

  A CVD gas 206 is introduced into one space 202a in the chamber 202 through a gas shower 205, and an inert gas 220 is introduced into the other space 202b. By setting the pressure in the space 202b higher than the pressure in the space 202a, the inert gas 220 is exhausted from the exhaust unit 207 together with the CVD gas 206.

  As a result, the CVD gas 206 is prevented from flowing around the back side of the wafer 100 and a thin film is prevented from being formed on the back side.

Japanese Patent Laying-Open No. 2007-141895 (paragraphs 0007 to 0010, 0012) JP-A-7-99162 (paragraphs 0013 to 0014)

  In a vacuum film forming apparatus, a heating mechanism such as a heater is usually installed in the same space as the space where plasma is generated. Therefore, at the time of cleaning, the plasma or radial of the cleaning gas (etching gas) flows into the heating mechanism such as a heater and corrodes and deteriorates the member of the heating mechanism, so that there is a problem that the life of the heating mechanism is reduced.

  To solve such a problem that the heating mechanism corrodes with the cleaning gas at the time of cleaning, a method of lowering the temperature of the heating mechanism at the time of cleaning and increasing the temperature after the cleaning process as described in Patent Document 1 can be considered. However, in this method, as described above, there is a problem that the operation of raising and lowering the temperature takes time and the operating rate of the vacuum film forming apparatus is lowered.

  Further, as in Patent Document 2 described above, the space in the chamber is separated into a space where the heating mechanism is installed and a space on the film forming surface side of the substrate, and the film forming gas does not enter the space on the heating mechanism side. Thus, in the configuration in which the thin film does not adhere to the heating mechanism and the cleaning itself is not required, a configuration in which the heating mechanism is spatially separated in the chamber is required, and the heating mechanism side is set to a high pressure. Since a pressurizing mechanism is also required, there is a problem that a peripheral device of the heating mechanism becomes large. When the peripheral device of the heating mechanism is increased in size, the capacity in the chamber increases, and there is a problem in that it takes time for intake and exhaust in the chamber and the operating rate of the vacuum film forming apparatus decreases.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-described conventional problems and prevent a heating mechanism such as a heater in a chamber from being deteriorated or corroded due to a cleaning process.

  Another object of the present invention is to eliminate the need for temperature control during cleaning and to eliminate the operation time associated with temperature control, thereby suppressing a reduction in the operating rate of the vacuum film forming apparatus.

  Further, the present invention eliminates the need for a structure for preventing the cleaning gas from flowing into the heating mechanism, suppresses the increase in the size of peripheral devices of the heating device and the accompanying increase in the size of the chamber, and reduces the intake / exhaust time in the chamber. It is an object to suppress a reduction in operating rate of the vacuum film forming apparatus by suppressing a long time.

  The present invention provides a vacuum film forming apparatus in which the outer periphery of the heating mechanism is covered with an inert gas at the time of cleaning so that radicals generated by the plasma having a high reactivity are prevented from coming into contact with the heating mechanism. Processing can prevent deterioration and corrosion.

  According to the present invention, a member that may be deteriorated or corroded by the cleaning process is used without using a corrosion-resistant material, and a conventionally used material such as Al is used as it is. Can be reduced.

  Further, according to the present invention, since a configuration for spatially separating the vacuum chamber is unnecessary, a mechanism for separating the vacuum chamber and an operation for adjusting a pressure difference between the two space portions may be unnecessary. it can.

  The present invention relates to a vacuum film forming apparatus for forming a film on a substrate surface in a vacuum chamber, a high-frequency electrode that generates plasma in the vacuum chamber, a susceptor that supports the substrate, a heating mechanism that heats the susceptor, A plasma cleaning mechanism that removes products adhering in the vacuum chamber and a protection mechanism that spatially separates the heating mechanism from the cleaning gas plasma or radicals are provided.

  The plasma cleaning mechanism of the present invention includes a gas introduction mechanism that introduces a cleaning gas into the vacuum chamber and a plasma generation mechanism that generates plasma or radicals of the cleaning gas.

  At the time of cleaning, for example, F-type or C-type cleaning gas (etching gas) is introduced from the gas introduction mechanism, and plasma is generated in the vacuum chamber by the plasma generation mechanism to generate cleaning plasma or radicals by the plasma. The cleaning plasma or radical removes the film deposited in the vacuum chamber.

  The protection mechanism of the present invention includes an inert gas introduction mechanism that introduces an inert gas into the space around the heating mechanism. The protective mechanism introduces an inert gas during cleaning and covers the periphery of the heating mechanism with the inert gas so as to be spatially separated from the cleaning gas plasma or radicals so that the heating mechanism is not eroded by the cleaning gas plasma or radicals. To.

  The inert gas introduced into the vacuum chamber is exhausted to the outside of the vacuum chamber together with the cleaning gas.

  The inert gas introduction mechanism of the present invention includes a plate member having a plurality of openings. The plurality of openings are distributed over the entire surface of at least one surface of the plate material, and an inert gas is introduced through the openings. The introduced inert gas flows out from the plurality of openings formed in the plate material toward the heating mechanism, and covers the periphery of the heating mechanism with the inert gas. By distributing the plurality of openings over the entire surface of the plate material, the discharge of the inert gas to the heating mechanism can be made uniform, and the periphery of the heating mechanism can be covered with the inert gas without leakage.

  The heating mechanism of the present invention can be configured to include a heater and a reflector that reflects heat radiation from the heater to the susceptor side. The inert gas introduction mechanism introduces an inert gas to the heater side through a plurality of openings formed in a reflector provided in the heating mechanism.

  The present invention can be configured to use a part of the susceptor as the inert gas introduction mechanism. In this configuration, the susceptor includes a plurality of openings that open to the heating mechanism and a passage that communicates with the openings. The susceptor introduces an inert gas to the heating mechanism through the passage and the opening. With this configuration, it is possible to reduce the number of components for introducing the inert gas, and it is possible to suppress an increase in the volume of the vacuum chamber in order to provide the inert gas introduction mechanism.

  In the present invention, the inert gas can be introduced into the heating mechanism from two locations. One of the inert gas introductions is performed through a reflector (heat reflector) provided in the heating mechanism, and the other one of the inert gas introductions is performed through a susceptor supporting the substrate.

  In this configuration, the heating mechanism includes a heater and a reflecting plate that reflects heat radiation from the heater to the susceptor side, and the reflecting plate includes a plurality of first openings that open to the heater side. The susceptor includes a plurality of second openings that open to the heating mechanism side, and a passage that communicates with the second openings.

  Here, the inert gas introduction mechanism introduces the inert gas to the heater side through the plurality of first openings provided in the reflector, and also supplies the inert gas through the passage provided in the susceptor and the plurality of second openings. Install on the heater side.

  According to the present invention, deterioration or corrosion caused by cleaning of a heating mechanism such as a heater in the chamber can be prevented.

  According to the present invention, it is possible to suppress a reduction in operating rate of the vacuum film forming apparatus by eliminating the need for temperature control during cleaning and eliminating the operation time associated with temperature control.

  According to the present invention, a configuration for preventing the cleaning gas from flowing into the heating mechanism can be eliminated, and the increase in the size of the peripheral device of the heating device and the accompanying increase in the size of the chamber can be suppressed. In addition, by preventing the chamber from becoming large, it is possible to suppress an increase in the intake / exhaust time in the chamber and suppress a reduction in the operating rate of the vacuum film forming apparatus.

It is a figure for demonstrating the structural example of the 1st protection mechanism of the vacuum film-forming apparatus of this invention. It is a figure for demonstrating the structural example of the 2nd protection mechanism of the vacuum film-forming apparatus of this invention. It is a figure for demonstrating the structural example of the 3rd protection mechanism of the vacuum film-forming apparatus of this invention. It is a figure for demonstrating the structural example of the 4th protection mechanism of the vacuum film-forming apparatus of this invention. It is a figure for demonstrating the structural example of the 4th protection mechanism of the vacuum film-forming apparatus of this invention. It is a figure for demonstrating schematic structure of the conventional vacuum film-forming apparatus. It is a figure for demonstrating schematic structure of the conventional CVD reactor apparatus.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  1 to 5 are schematic views for explaining a configuration example of a vacuum film forming apparatus of the present invention.

  1 to 5, a vacuum film forming apparatus 1 according to the present invention includes a susceptor 5, a high-frequency electrode 3, and a heating mechanism 10 in a vacuum chamber 2.

  The susceptor 5 is a member that mounts and supports the substrate 100 that is a material to be processed such as a wafer. For example, an Al material can be used. The high frequency electrode 3 is disposed at a position facing the susceptor 5, and plasma is formed by a discharge generated between the high frequency electrode 3 and the susceptor 5. The heating mechanism 10 heats the susceptor 5 to increase the reactivity of film formation or cleaning.

  A CVD material gas for film formation or a cleaning gas for cleaning is introduced into the vacuum chamber 2. Gas introduction into the vacuum chamber 2 is performed by the gas introduction unit 6. The gas introducing unit 6 switches and introduces the CVD material gas or the cleaning gas by a switching mechanism (not shown). In addition, the flow rate and pressure of the introduced gas can be controlled by an adjustment mechanism (not shown).

  Introduction of gas from the gas introduction part 6 into the vacuum chamber 2 can be performed, for example, through a plurality of openings 3 a formed in the high-frequency electrode 3. The high-frequency electrode 3 having a plurality of openings is called, for example, a shower head. The introduction of the CVD material gas or the cleaning gas into the vacuum chamber 2 may be performed by using another introduction mechanism in addition to the above-described configuration through the opening 3a.

  The high frequency electrode 3 is supplied with high frequency power from a high frequency power source 4 and generates a discharge with the susceptor 5. At this time, plasma is formed by introducing a CVD material gas or a cleaning gas into the vacuum chamber 102. Also, the plasma generates radial atoms contained in the gas component.

  The vacuum film forming apparatus 1 uses this plasma or radical reactivity to form a thin film on the substrate 100 when the CVD material gas is introduced, and when the cleaning gas is introduced, the inner wall of the vacuum chamber 2 or the like. The thin film adhering to the surface is removed and a cleaning process is performed.

  The high-frequency electrode 3 and the susceptor 5 constitute a plasma generating mechanism. When introducing a CVD material gas, this plasma generating mechanism functions as a plasma film forming mechanism. When introducing a cleaning gas, this plasma generating mechanism. Functions as a plasma cleaning mechanism.

  The heating mechanism 10 is disposed opposite to the surface opposite to the surface on which the substrate 100 is placed with respect to the susceptor 5. The heating mechanism 10 can be configured to include, for example, a heater 10a and a reflector 10b (heater reflector). The reflecting plate 10b is a member that improves the thermal efficiency by reflecting the heat released from the heater 10a to the susceptor 5 side. The heating mechanism 10 raises the temperature of the substrate 100 placed on the susceptor 5 by heating the susceptor 5, and this temperature rise improves the reactivity of film formation or cleaning.

  The CDV material gas and the cleaning gas introduced into the vacuum chamber 2 are exhausted to the outside through the exhaust unit 7 formed in the vacuum chamber 2.

  The vacuum film forming apparatus 1 of the present invention includes a protection mechanism that spatially separates from cleaning gas plasma or radicals. The protection mechanism includes an inert gas introduction unit 20 that introduces an inert gas into the space around the heating mechanism 10, and introduces an inert gas during cleaning to cover the heating mechanism 10 with the inert gas, thereby cleaning gas plasma or radicals. The heating mechanism 10 is prevented from being eroded by cleaning gas plasma or radicals.

  Hereinafter, configuration examples (first configuration example to fifth configuration example) of the protection mechanism of the present invention will be described with reference to FIGS.

  The first to third configuration examples of the protection mechanism are examples in which the inert gas introduction mechanism included in the protection mechanism is configured by the reflector of the heating mechanism including a plurality of openings, and the fourth configuration example of the protection mechanism. Is an example in which the inert gas introduction mechanism included in the protection mechanism is configured by a susceptor including a plurality of openings, and the fifth configuration example of the protection mechanism includes a plurality of inert gas introduction mechanisms included in the protection mechanism. It is an example comprised by the reflecting plate of the heating mechanism provided with this opening part, and the susceptor provided with the several opening part.

[First configuration example of inert gas introduction section]
First, a first configuration example of the protection mechanism will be described with reference to FIG. In the configuration example shown in FIG. 1, the reflecting plate 10 b included in the heating mechanism 10 has a size enough to cover the heater 10 a, and a plurality of openings 10 c are formed on at least the surface facing the heater 10 a. Moreover, the reflecting plate 10b may be configured to include an edge portion surrounding the side surface portion of the heater 10a, and the opening 10c may be formed in this edge portion.

  An inert gas is introduced from the opening 10c toward the heater 10a. The introduction of the inert gas is performed by the inert gas introduction unit 20.

  For introducing the inert gas, an enclosing portion 20c is provided outside the reflecting plate 10b so as to surround the reflecting plate 10b, and an introducing space 20b for introducing the inert gas is formed between the reflecting plate 10b and this introducing space. An inert gas is supplied from an inert gas source (not shown) through the introduction path 20a into 20b.

  The inert gas supplied through the introduction path 20a is temporarily held in the introduction space 20b, and then introduced into the heater 10a through the plurality of openings 10c, surrounds the heater 10a, and from the cleaning gas to the heater 10a. Isolate. At this time, the inert gas is temporarily held so as to surround the periphery of the heater 10a in a space portion formed between the bottom surface of the susceptor 5 and the reflecting plate 10b.

  With this configuration, the inert gas can be uniformly introduced to the entire periphery of the heater 10a.

[Second Configuration Example of Inert Gas Introducing Unit]
Next, a second configuration example of the protection mechanism will be described with reference to FIG. In the configuration example shown in FIG. 2, the reflecting plate 10 b included in the heating mechanism 10 has a size enough to cover the heater 10 a, and a plurality of openings 10 c are formed at least on the surface facing the heater 10 a. Moreover, the reflecting plate 10b may be configured to include an edge portion surrounding the side surface portion of the heater 10a, and the opening 10c may be formed in this edge portion.

  The reflection plate 10b has an introduction space 10d formed therein and communicates with the opening 10c. An inert gas source (not shown) introduces an inert gas into the introduction space 10d through the introduction path 20a. The introduced inert gas is temporarily held in the introduction space 10d, and then introduced into the heater 10a through the plurality of openings 10c, surrounds the heater 10a, and separates the heater 10a from the cleaning gas. At this time, the inert gas is temporarily held so as to surround the periphery of the heater 10a in a space portion formed between the bottom surface of the susceptor 5 and the reflecting plate 10b.

  With this configuration, the inert gas can be uniformly introduced to the entire periphery of the heater 10a. Further, by forming the introduction space 10d for introducing and temporarily holding the inert gas inside the reflection plate 10b, the components of the enclosing portion 20c of the first configuration example described above can be made unnecessary. it can.

[Third configuration example of the inert gas introduction section]
Next, a third configuration example of the protection mechanism will be described with reference to FIG. In the configuration example shown in FIG. 3, the reflector 10b provided in the heating mechanism 10 has a size that covers the heater 10a, and a communication hole 10e is formed at least on the surface facing the heater 10a. Moreover, the reflecting plate 10b may be configured to include an edge portion surrounding the side surface portion of the heater 10a, and the communication hole 10e may be formed in the edge portion.

  An inert gas is supplied to the communication hole 10e from an inert gas source (not shown) through the introduction path 20a, and is introduced into the heater 10a through the communication hole 10e. The introduced inert gas surrounds the heater 10a and separates the heater 10a from the cleaning gas. At this time, the inert gas is temporarily held so as to surround the periphery of the heater 10a in a space portion formed between the bottom surface of the susceptor 5 and the reflecting plate 10b.

  With this configuration, the inert gas can be uniformly introduced to the entire periphery of the heater 10a. Further, the protection mechanism can be formed with a simple configuration in which the introduction path 20a is connected to the communication hole 10e in which the reflecting plate 10b is opened.

[Fourth Configuration Example of Inert Gas Introducing Unit]
Next, a fourth configuration example of the protection mechanism will be described with reference to FIG. In the configuration example shown in FIG. 4, the reflection plate 10 b included in the heating mechanism 10 has a size enough to cover the heater 10 a. On the other hand, the susceptor 5 has a plurality of openings 5a formed on at least a surface facing the heater 10a, and an introduction space 5b formed therein. An inert gas is supplied to the introduction space 5b from an inert gas source (not shown) through the introduction path 20d.

  The inert gas supplied through the introduction path 20a is temporarily held in the introduction space 5b, and then introduced into the heater 10a through the plurality of openings 5a, surrounds the heater 10a, and from the cleaning gas to the heater 10a. Isolate. At this time, the inert gas is temporarily held so as to surround the periphery of the heater 10a in a space portion formed between the bottom surface of the susceptor 5 and the reflecting plate 10b.

  With this configuration, the inert gas can be uniformly introduced to the entire periphery of the heater 10a.

[Fifth Configuration Example of Inert Gas Introducing Unit]
Next, a fifth configuration example of the protection mechanism will be described with reference to FIG. The configuration example shown in FIG. 5 is a configuration example in which the second configuration example and the fourth configuration example described above are combined.

  In the configuration example shown in FIG. 5, the reflecting plate 10 b included in the heating mechanism 10 has a size that covers the heater 10 a, and a plurality of openings 10 c are formed at least on the surface facing the heater 10 a. Moreover, the reflecting plate 10b may be configured to include an edge portion surrounding the side surface portion of the heater 10a, and the opening 10c may be formed in this edge portion.

  The reflection plate 10b has an introduction space 10d formed therein and communicates with the opening 10c. An inert gas source (not shown) introduces an inert gas into the introduction space 10d through the introduction path 20a. The introduced inert gas is temporarily held in the introduction space 10d and then introduced into the heater 10a through the plurality of openings 10c.

  On the other hand, the susceptor 5 has a plurality of openings 5a formed at least on the surface facing the heater 10a, and an introduction space 5b formed therein. An inert gas is supplied to the introduction space 5b from an inert gas source (not shown) through the introduction path 20d.

  The inert gas supplied through the introduction path 20c is temporarily held in the introduction space 5b, and then introduced into the heater 10a through the plurality of openings 5a, and surrounds the heater 10a from the cleaning gas to the heater 10a. Isolate. At this time, the inert gas is temporarily held so as to surround the periphery of the heater 10a in a space portion formed between the bottom surface of the susceptor 5 and the reflecting plate 10b.

  The inert gas introduced from the reflector 10b side and the inert gas introduced from the susceptor 5 side surround the heater 10a and separate the heater 10a from the cleaning gas. At this time, the inert gas is temporarily held so as to surround the periphery of the heater 10a in a space portion formed between the bottom surface of the susceptor 5 and the reflecting plate 10b.

  With this configuration, the inert gas can be uniformly introduced to the entire periphery of the heater 10a.

DESCRIPTION OF SYMBOLS 1 Vacuum film-forming apparatus 2 Vacuum chamber 3 High frequency electrode 3a Opening part 4 High frequency power supply 5 Susceptor 5a Opening part 5b Introduction space 6 Gas introduction part 7 Exhaust part 10 Heating mechanism 10a Heater 10b Reflector 10c Opening part 10d Introduction space 10e Communication hole 20 Inert gas introduction part 20a Introduction path 20b Introduction space 20c Enclosure 20d Introduction path 100 Substrate (wafer)
DESCRIPTION OF SYMBOLS 101 Vacuum film-forming apparatus 102 Vacuum chamber 103 High frequency electrode 103a Opening part 104 High frequency power supply 105 Susceptor 106 Gas introduction part 107 Exhaust part 110 Heating mechanism 110a Heater 110b Reflector 200 Reactor apparatus 202 Chamber 202a Space part 202b Space part 205 Gas shower 206 CVD Gas 207 Exhaust part 210 Light irradiation window 220 Inert gas

Claims (5)

In a vacuum film forming apparatus for forming a film on a substrate surface in a vacuum chamber,
A high-frequency electrode for generating plasma in the vacuum chamber; a susceptor that supports the substrate; a heating mechanism that heats the susceptor; a plasma cleaning mechanism that removes products adhering to the vacuum chamber; and the heating mechanism. With a protective mechanism to spatially separate from the cleaning gas plasma or radicals,
The plasma cleaning mechanism includes:
A gas introduction mechanism for introducing a cleaning gas into the vacuum chamber, and a plasma generation mechanism for generating plasma or radicals of the cleaning gas,
The protection mechanism is:
An inert gas introduction mechanism for introducing an inert gas into the space around the heating mechanism is provided, and the inert gas is introduced during cleaning to spatially separate the heating mechanism from the cleaning gas plasma or radical to protect the heating mechanism. The vacuum film-forming apparatus characterized by the above-mentioned.   The inert gas introduction mechanism includes a plate material having a plurality of openings, and the plurality of openings are distributed over the entire surface of at least one surface of the plate material, and the inert gas is introduced through the openings. The vacuum film-forming apparatus according to claim 1, characterized in that it is characterized in that The heating mechanism includes a heater and a reflecting plate that reflects heat radiation from the heater to the susceptor side,
The vacuum film forming apparatus according to claim 1, wherein the inert gas introduction mechanism introduces an inert gas to the heater through a plurality of openings formed in the reflector.   The susceptor includes a plurality of openings that open to the heating mechanism side, and a passage that communicates with the opening, and introduces an inert gas through the passage and the opening. 2. A vacuum film forming apparatus according to 1. The heating mechanism includes a heater and a reflecting plate that reflects heat radiation from the heater to the susceptor side, and the reflecting plate has a plurality of first openings that open to the heater side,
The susceptor includes a plurality of second openings that open to the heating mechanism, and a passage that communicates with the second openings.
The inert gas introduction mechanism introduces an inert gas to the heater side through a plurality of first openings provided in the reflector, and passes the inert gas through a passage provided in the susceptor and a plurality of second openings. The vacuum film forming apparatus according to claim 1, wherein the vacuum film forming apparatus is introduced to the heater side.