JP2011055033A - Piezoelectric oscillator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric oscillator capable of preventing an integrated circuit element from peeling off. <P>SOLUTION: The piezoelectric oscillator includes an element mounting member, a piezoelectric vibrating element, an integrated circuit element, and a lid member. The element mounting member includes a substrate, a first frame, and a second frame, wherein the first frame and the second frame are prepared on one principal plane of the substrate to form a recessed space. The piezoelectric vibrating element is mounted at a pair of two piezoelectric vibrating element mounting pads prepared on the principal plane of a mounting section. The integrated circuit element includes an electrode for joining to the element mounting member, wherein the electrode is joined to the integrated circuit element mounting pad prepared at the substrate. The lid member hermetically seals off the recessed space. The electrode for joining to the element mounting member is composed of an aluminum layer, a middle metal layer, and a plating bump layer. It is characterized in that the thickness of the aluminum layer is 0.6-1.5 μm, the thickness of the middle metal layer is 0.5-1.7 μm, and the thickness of the plating bump layer is 5-30 μm. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a piezoelectric oscillator used in an electronic device or the like.

FIG. 9 is a cross-sectional view showing a conventional piezoelectric oscillator.
The conventional piezoelectric oscillator 200 mainly includes an element mounting member 210 having a recessed space 211, a piezoelectric vibration element 220, and a lid member 230.
The element mounting member 210 includes a substrate part 210a, a first frame part 210b, and a second frame part 210c.
The element mounting member 210 is provided with a first frame portion 210b and a second frame portion 210c in this order on one main surface of the substrate portion 210a, and a rectangular recess space 211 is formed in plan view. A mounting portion 213 is provided in the recessed space 211 at a position higher than the bottom surface of the recessed space 211, and two pairs of piezoelectric vibration element mounting pads 214 are provided on the main surface of the mounting portion 213. Yes.
An integrated circuit element mounting pad 215 is provided on the main surface of the element mounting member 210 in the recessed space 211. The integrated circuit element mounting pad 215 includes a nickel plating layer and a gold plating layer.
In addition, external connection electrode terminals 216 are provided at the four corners of the other main surface of the substrate portion 210 a of the element mounting member 210.
In addition, a sealing conductor pattern 212 is provided on the main surface of the second frame portion 210 c of the element mounting member 210.
The lid member 230 is joined to the sealing conductor pattern 212 of the element mounting member 210 by a sealing member 231.

The piezoelectric vibration element 220 is formed by adhering and forming an excitation electrode 222 on a square crystal base plate 221. When an alternating voltage from the outside is applied to the crystal base plate 221 via the excitation electrode 222, the piezoelectric vibration element 220 is predetermined. The vibration is generated at the vibration mode and frequency.
The excitation electrode 222 is formed by depositing and forming metal in a predetermined pattern on both the front and back main surfaces of the quartz base plate 221.
Such a piezoelectric vibration element 220 electrically connects the extraction electrode 224 extending from the excitation electrode 222 attached to both main surfaces thereof and the piezoelectric vibration element mounting pad 214 via a conductive adhesive DS. It is mounted by connecting mechanically and mechanically. At this time, an end opposite to the one side where the extraction electrode 224 is provided is defined as a tip 223 which is a free end of the piezoelectric vibration element 220.

In the integrated circuit element 240, an insulating layer such as an epoxy resin is formed on one main surface, and an element mounting member bonding electrode 241 is provided on the other main surface.
The element mounting member bonding electrode 241 includes an aluminum layer 241a and a gold bump layer 241b.
Further, the integrated circuit element 240 is placed on the integrated circuit element mounting pad 215 formed in the recessed space 211 of the element mounting member 210, and is made of a metal for bonding to the other main surface of the integrated circuit element 240. A horn (not shown) is brought into contact.
An integrated circuit element 240 is vibrated by applying an ultrasonic wave to the bonding horn, and the gold bump layer 241b is melted by heat generated by friction with the integrated circuit element mounting pad 215 and thermocompression bonded. A structure 240 is mounted on the integrated circuit element mounting pad 215 (see Patent Document 1).

JP 2009-16395 A

  However, in the conventional piezoelectric oscillator 200, when the integrated circuit element 240 is mounted on the integrated circuit element mounting pad 215, there is a problem that the element mounting member bonding electrode 241 of the integrated circuit element 240 is peeled off from the integrated circuit element 240. there were. Further, after the integrated circuit element 240 is mounted on the integrated circuit element mounting pad 215, there is a problem that the element mounting member bonding electrode 241 of the integrated circuit element 240 is peeled off from the integrated circuit element mounting pad 215 of the element mounting member 210. .

  The present invention has been made in view of the above problems, and prevents an electrode for joining an element mounting member of an integrated circuit element from being peeled off from the integrated circuit element, and the electrode for joining an element mounting member of an integrated circuit element is an element mounting member. It is an object of the present invention to provide a piezoelectric oscillator capable of preventing peeling from the integrated circuit element mounting pad.

  The piezoelectric oscillator of the present invention includes a substrate portion, an element mounting member in which a first frame portion and a second frame portion are provided on one main surface of the substrate portion to form a recessed space, and a bottom surface in the recessed space. And a pair of piezoelectric vibration element mounting pads provided on the main surface of the mounting part, a piezoelectric vibration element mounted on the piezoelectric vibration element mounting pad, and a substrate exposed in the recess space An integrated circuit element mounting pad provided in the part, an integrated circuit element provided with an element mounting member bonding electrode for bonding to the integrated circuit element mounting pad, a lid member for hermetically sealing the recessed space, The element mounting member bonding electrode is composed of an aluminum layer, an intermediate metal layer, and a plating bump layer, the aluminum layer has a thickness of 0.6 to 1.5 μm, and the intermediate metal layer has a thickness of 0.5 ~ 1.7μm, plating The bump layer has a thickness of 5 to 30 μm.

  The integrated circuit element mounting pad is composed of a nickel plating layer and a gold plating layer, and the flatness of the gold plating layer of the integrated circuit element mounting pad is 0.1 to 1.0 μm. is there.

  According to the piezoelectric oscillator of the present invention, the element mounting member bonding electrode includes an aluminum layer, an intermediate metal layer, and a plating bump layer, and the thickness of the aluminum layer is 0.6 to 1.5 μm. The thickness of the intermediate metal layer is 0.5 to 1.7 μm, and the thickness of the plated bump layer is 5 to 30 μm, so that the element mounting member bonding electrode of the integrated circuit element is peeled off from the integrated circuit element. In addition, the element mounting member bonding electrode of the integrated circuit element can be prevented from being peeled off from the integrated circuit element mounting pad of the element mounting member.

  Further, the integrated circuit element mounting pad is composed of a nickel plating layer and a gold plating layer, and the flatness of the gold plating layer of the integrated circuit element mounting pad is 0.1 to 1.0 μm. When the pad is bonded to the gold-plated bump layer of the element mounting member bonding electrode, stress can be absorbed even if the element mounting member is warped by heat. Therefore, the element mounting member bonding electrode of the integrated circuit element is the element mounting member. It is possible to prevent peeling from the integrated circuit element mounting pad.

1 is an exploded perspective view showing a piezoelectric oscillator according to an embodiment of the present invention. It is AA sectional drawing of FIG. It is the perspective view seen from the surface of the element mounting member joining electrode of the integrated circuit element which comprises the piezoelectric oscillator which concerns on embodiment of this invention. It is the schematic which expanded the element mounting member joining electrode of the integrated circuit element which comprises the piezoelectric oscillator which concerns on embodiment of this invention. It is a graph which shows the relationship between the thickness of the aluminum layer of the element mounting member joining electrode of the integrated circuit element which comprises the piezoelectric oscillator which concerns on embodiment of this invention, and a joining defect incidence. It is a graph which shows the relationship between the thickness of the intermediate | middle metal layer of the element mounting member joining electrode of the integrated circuit element which comprises the piezoelectric oscillator which concerns on embodiment of this invention, and a joining defect incidence. It is a graph which shows the relationship between the thickness of the plating bump layer of the element mounting member joining electrode of the integrated circuit element which comprises the piezoelectric oscillator which concerns on embodiment of this invention, and a joining defect incidence. It is a graph which shows the relationship between the flatness of the gold plating layer of the integrated circuit element mounting pad of the element mounting member which comprises the piezoelectric oscillator which concerns on embodiment of this invention, and a joining defect incidence. It is sectional drawing of the conventional piezoelectric device.

  Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. A case where quartz is used for the piezoelectric vibration element will be described. In addition, the illustrated dimensions are partially exaggerated.

(First embodiment)
FIG. 1 is an exploded perspective view showing a piezoelectric oscillator according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the line AA of FIG. FIG. 3 is a perspective view of the integrated circuit element constituting the piezoelectric device according to the embodiment of the present invention as viewed from the surface of the element mounting member bonding electrode. FIG. 4 is an enlarged schematic view of the element mounting member bonding electrode of the integrated circuit element constituting the piezoelectric oscillator according to the embodiment of the present invention. FIG. 5 is a graph showing the relationship between the thickness of the aluminum layer of the element mounting member bonding electrode of the integrated circuit element constituting the piezoelectric oscillator according to the embodiment of the present invention and the bonding failure occurrence rate. FIG. 6 is a graph showing the relationship between the thickness of the intermediate metal layer of the element mounting member bonding electrode of the integrated circuit element constituting the piezoelectric oscillator according to the embodiment of the present invention and the bonding failure occurrence rate. FIG. 7 is a graph showing the relationship between the thickness of the plating bump layer of the element mounting member bonding electrode of the integrated circuit element constituting the piezoelectric oscillator according to the embodiment of the present invention and the bonding failure occurrence rate. FIG. 8 is a graph showing the relationship between the flatness of the gold plating layer of the integrated circuit element mounting pad of the element mounting member constituting the piezoelectric oscillator according to the embodiment of the present invention and the bonding failure occurrence rate.

In this embodiment, a piezoelectric oscillator will be described as an example of a piezoelectric device.
As shown in FIGS. 1 and 2, the piezoelectric vibrator 100 according to the first embodiment of the present invention is mainly composed of an element mounting member 110, a piezoelectric vibration element 120, a lid member 130, and an integrated circuit element 140. Yes. The piezoelectric vibrator 100 has a structure in which a piezoelectric vibration element 120 and an integrated circuit element 140 are mounted in a recessed space 111 formed in the element mounting member 110, and the recessed space 111 is hermetically sealed by a lid member 130. It has become.

As shown in FIGS. 1 and 2, the piezoelectric vibration element 120 is formed by adhering an excitation electrode 122 to a crystal element plate 121, and an alternating voltage from the outside passes through the excitation electrode 122. When applied to 121, excitation occurs in a predetermined vibration mode and frequency.
The quartz base plate 121 is a substantially flat plate shape that is cut from an artificial crystalline lens at a predetermined cut angle and is subjected to outer shape processing, and has a planar shape of, for example, a quadrangle.
The excitation electrode 122 is formed by depositing and forming a metal in a predetermined pattern on both the front and back main surfaces of the crystal base plate 121.
Such a piezoelectric vibration element 120 is formed on a main surface of a lead electrode 124 extending from an excitation electrode 122 attached to both main surfaces of the piezoelectric vibration element 120 and a mounting portion 113 of an element mounting member 110 described later. The two pairs of piezoelectric vibration element mounting pads 113 are mounted by electrically and mechanically connecting them through a conductive adhesive DS (see FIG. 2). At this time, an end opposite to the one side where the extraction electrode 124 is provided is defined as a distal end portion 123 which is a free end of the piezoelectric vibration element 120.

As shown in FIGS. 1 to 3, the integrated circuit element 140 is provided with an oscillation circuit or the like for generating an oscillation output from the piezoelectric vibration element 120 on the circuit formation surface, and an output signal generated by the oscillation circuit. Is output to the outside of the piezoelectric oscillator 100 via the external connection electrode terminal 116, and is used as a reference signal such as a clock signal, for example.
In addition, in the integrated circuit element 140, in order to compensate the fluctuation of the oscillation frequency of the oscillation circuit due to the temperature change by applying a control voltage according to the ambient temperature to the variable capacitance element, the temperature is controlled by the cubic function generation circuit and the storage element unit A compensation circuit unit is provided, and a temperature sensor is connected to the cubic function generation circuit.
This temperature sensor is configured to output a temperature data signal (voltage value) generated based on the detected temperature and a voltage value applied to the temperature sensor to a cubic function generation circuit.
The integrated circuit element 140 is provided with an element mounting member bonding electrode 141 for bonding to an integrated circuit element mounting pad 115 described later.
The element mounting member bonding electrode 141 of the integrated circuit element 140 and the integrated circuit element mounting pad 115 of the element mounting member 110 are bonded together by applying heat and a load.
The temperature applied at the time of joining is, for example, 200 to 400 ° C. Further, it is necessary to apply a load of 0.981 N or more per one element mounting member bonding electrode 141.

As shown in FIGS. 3 and 4, the element mounting member bonding electrode 141 includes an aluminum layer 141 a, an intermediate metal layer 141 b, and a plating bump layer 141 c.
The thickness d1 of the aluminum layer 141a is 0.6 to 1.5 μm.
When the thickness d1 of the aluminum layer 141a is less than 0.6 μm, as shown in FIG. 5, it can be confirmed that the bonding failure occurrence rate tends to increase. Further, when the thickness d1 of the aluminum layer 141a is larger than 1.5 μm, it can be confirmed that the incidence of defective bonding tends to increase as shown in FIG.
As shown in FIG. 5, when the thickness d1 of the aluminum layer 141a is 0.6 to 1.5 μm, the interface between the integrated circuit element 140 and the aluminum layer 140a, and the interface between the aluminum layer 140a and the intermediate metal layer 140b. It can be confirmed that the occurrence rate of bonding failure that peels off is 0%.
That is, since the thickness d1 of the aluminum layer 141a is 0.6 to 1.5 μm, the bonding failure between the element mounting member bonding electrode 141 of the integrated circuit element 140 and the integrated circuit element mounting pad 115 of the element mounting member 110 is caused. The occurrence rate can be reduced.

The intermediate metal layer 141b shown in FIG. 4 is made of, for example, titanium (Ti), tungsten (W), etc., and the thickness d2 of the intermediate metal layer 141b is 0.5 to 1.7 μm.
When the thickness d2 of the intermediate metal layer 141b is less than 0.5 μm, as shown in FIG. 6, it can be confirmed that the bonding failure occurrence rate tends to increase. Further, when the thickness d2 of the intermediate metal layer 141b is larger than 1.7 μm, it can be confirmed that the bonding failure occurrence rate tends to increase as shown in FIG.
As shown in FIG. 6, when the thickness d2 of the intermediate metal layer 141b is 0.5 to 1.7 μm, the interface between the aluminum layer 141a and the intermediate metal layer 141b and the intermediate metal layer 141b and the plating bump layer 141c It can be confirmed that the bonding failure occurrence rate at which the interface is peeled off is 0%.
In other words, the thickness d2 of the intermediate metal layer 141b is 0.5 to 1.7 μm, so that the element mounting member bonding electrode 141 of the integrated circuit element 140 and the integrated circuit element mounting pad 115 of the element mounting member 110 are bonded. The defect occurrence rate can be reduced.

The plated bump layer 141c shown in FIG. 4 is made of, for example, gold (Au), and the thickness d3 of the plated bump layer 141c is 5 to 30 μm.
When the thickness d3 of the plating bump layer 141c is less than 5 μm, it can be confirmed that the bonding failure occurrence rate tends to increase as shown in FIG. Further, when the thickness d3 of the plated bump layer 141c is larger than 30 μm, it can be confirmed that the bonding failure occurrence rate tends to increase as shown in FIG.
Further, when the thickness d3 of the plating bump layer 141c is larger than 30 μm, it is necessary to apply a load by an amount corresponding to the increase in the thickness of the plating bump layer 141c at the time of bonding, so that the integrated circuit element 140 is cracked. There was a case.
As shown in FIG. 7, when the thickness d3 of the plating bump layer 141c is 5 to 30 μm, it is possible to prevent the interface between the intermediate metal layer 141b and the plating bump layer 141c from being peeled off. In addition, the bonding failure occurrence rate at which the interface between the plating bump 141c of the element mounting member bonding electrode 141 of the integrated circuit element 140 and the integrated circuit element mounting pad 115 of the element mounting member 110 is peeled off is 0%. I can confirm.
In other words, the thickness d3 of the plated bump layer 141c is 5 to 30 μm, so that the bonding failure occurrence rate between the element mounting member bonding electrode 141 of the integrated circuit element 140 and the integrated circuit element mounting pad 115 of the element mounting member 110 is reduced. The integrated circuit element 140 can be prevented from cracking.

As shown in FIGS. 1 to 2, the element mounting member 110 includes a substrate portion 110a, a first frame portion 110b, a second frame portion 110c, a mounting portion 113, a piezoelectric vibration element mounting pad 114, and an integrated circuit. It is mainly composed of an element mounting pad 115 and an external connection electrode terminal 116.
The element mounting member 110 is provided with a first frame part 110b and a second frame part 110c on one main surface of the substrate part 110a to form a recessed space 111.

The element mounting member 110 is laminated, for example, in the order of a first frame portion 110b and a second frame portion 110c on a substrate portion 110a, and the second frame portion 110c is stacked on the first frame portion 110b. It is formed to be wider than the width of the opening.
Thus, the mounting portion 113 is formed on the bottom surface of the recessed space 111 by the first frame portion 110b and the second frame portion 110c. Therefore, the mounting portion 113 is formed by the inner wall portion of the recessed space 111 of the first frame portion 110b and the main surface of the first frame portion 110b.
In addition, two pairs of piezoelectric vibration element mounting pads 114 are provided on the main surface of the mounting portion 113.
An integrated circuit element mounting pad 115 is provided on the main surface of the substrate part 110 a exposed in the recessed space 111 of the element mounting member 110.
In addition, external connection electrode terminals 116 are provided at the four corners of the other main surface of the substrate portion 110 a of the element mounting member 110.
An annular sealing conductor pattern 112 is provided on the main surface of the second frame portion 110 c of the element mounting member 110.

  In addition, the board | substrate part 110a, the 1st frame part 110b, and the 2nd frame part 110c which comprise this element mounting member 110 are formed by laminating | stacking multiple ceramic materials, such as an alumina ceramic and glass-ceramic, for example. . The substrate unit 110a has a structure in which ceramic materials are stacked.

An annular sealing conductor pattern 112 is provided on the main surface of the second frame portion 110 c of the element mounting member 110.
In addition, a wiring pattern (not shown) or the like is provided in the inner layer of the substrate unit 110a.

  The piezoelectric vibration element mounting pad 114 is formed by laminating a second metal layer made of gold plating or the like on the surface of a first metal layer made of tungsten (W), molybdenum (Mo) or the like.

As shown in FIG. 4, the integrated circuit element mounting pad 115 includes a nickel plating layer 115a and a gold plating layer 115b.
When the flatness of the gold plating layer 115b of the integrated circuit element mounting pad 115 is larger than 1.0 μm, the element mounting member 110 is heated due to heat when bonded to the plating bump layer 141c of the element mounting member bonding electrode 141. When warped, the stress could not be absorbed, so it was peeled off.
That is, as shown in FIG. 8, when the flatness of the gold plating layer 115b of the integrated circuit element mounting pad 115 is 1.0 μm or less, it is bonded to the plating bump layer 141c of the element mounting member bonding electrode 141. In addition, since the stress can be absorbed even if the element mounting member 110 is warped by heat, the element mounting member bonding electrode 141 of the integrated circuit element 140 is peeled off from the integrated circuit element mounting pad 115 of the element mounting member 110. Can be prevented.

  The sealing conductor pattern 112 surrounds the recess space 111 in an annular shape by sequentially placing a nickel (Ni) layer and a gold (Au) layer on the surface of a base layer made of, for example, tungsten (W), molybdenum (Mo), or the like. By making it adhere in a form, it is formed to a thickness of 10 μm to 25 μm.

The lid member 130 is made of, for example, an Fe—Ni alloy (42 alloy), an Fe—Ni—Co alloy (Kovar), or the like. Such a lid member 130 hermetically seals the recessed space 111 with nitrogen gas or vacuum. Specifically, the lid member 130 is placed on the second frame portion 110c of the element mounting member 110 in a nitrogen atmosphere or a vacuum atmosphere, and the sealing conductor pattern 112 of the second frame portion 110c By applying a predetermined current so that the sealing member 131 of the lid member 130 is welded and performing seam welding, the lid member 130 is joined to the second frame portion 110b.
The sealing member 131 is made of, for example, silver brazing (Ag—Cu), gold tin (Au—Sn), or the like.

The conductive adhesive DS contains conductive powder as a conductive filler in a binder such as silicone resin. Examples of the conductive powder include aluminum (Al), molybdenum (Mo), tungsten ( W), platinum (Pt), palladium (Pd), silver (Ag), titanium (Ti), nickel (Ni), nickel iron (NiFe), or any combination thereof is used. Yes.
The conductive adhesive DS contains a solvent added to adjust the viscosity to be easily applied.

  When the element mounting member 110 is made of alumina ceramic, a sealing conductor pattern 112, piezoelectric vibration, and the like are formed on the surface of a ceramic green sheet obtained by adding and mixing a suitable organic solvent to a predetermined ceramic material powder. Conventionally known is a conductor paste to be the element mounting pad 113, the external connection electrode terminal 114, etc., and a conductor paste to be a via conductor in a through-hole previously punched by punching the ceramic green sheet. It is manufactured by applying it by screen printing, laminating a plurality of these and press-molding them, followed by firing at a high temperature.

According to the piezoelectric oscillator 100 of the present invention, the element mounting member bonding electrode 141 includes the aluminum layer 141a, the intermediate metal layer 141b, and the plating bump layer 141c, and the thickness d1 of the aluminum layer 141a is 0.6. The thickness d2 of the intermediate metal layer 141b is 0.5 to 1.7 μm, and the thickness d3 of the plated bump layer 141c is 5 to 30 μm. It is possible to prevent the member bonding electrode 141 from being peeled off from the integrated circuit element 140, and the element mounting member bonding electrode 141 of the integrated circuit element 140 is peeled off from the integrated circuit element mounting pad 115 of the element mounting member 110. Can be prevented.
Further, the thickness d1 of the aluminum layer 141a is 0.6 to 1.5 μm, the thickness d2 of the intermediate metal layer 141b is 0.5 to 1.7 μm, and the thickness d3 of the plating bump layer 141c is 5 to 5 μm. By combining the three conditions of 30 μm, the element mounting member bonding electrode 141 of the integrated circuit element 140 is further prevented from peeling off from the integrated circuit element 140, and the element mounting member bonding electrode 141 of the integrated circuit element 140 is It is possible to further prevent the element mounting member 110 from being peeled off from the integrated circuit element mounting pad 115. That is, by combining these three conditions, it is possible to further reduce the bonding failure occurrence rate.

  The integrated circuit element mounting pad 115 is composed of a nickel plating layer 115a and a gold plating layer 115b, and the flatness (see FIG. 8) of the gold plating layer 115b of the integrated circuit element mounting pad 115 is 0.1 to 1. By being 0 μm, the element mounting member bonding electrode 141 of the integrated circuit element 140 can absorb stress even when the element mounting member 110 is warped by heat when bonded to the element mounting member bonding electrode 141. Can be prevented from being peeled off from the integrated circuit element mounting pad 115 of the element mounting member 110.

In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.
For example, in the above-described embodiment, the case where quartz is used as the piezoelectric material constituting the piezoelectric vibration element has been described. However, as other piezoelectric materials, lithium niobate, lithium tantalate, or piezoelectric ceramics is used as the piezoelectric material. The piezoelectric vibration element may be used.

DESCRIPTION OF SYMBOLS 110 ... Element mounting member 110a ... Board | substrate part 110b ... 1st frame part 110c ... 2nd frame part 111 ... Recessed space 112 ... Conductive pattern 113 for sealing ... Mounting part 114 ... Piezoelectric vibration element mounting pad 115 ... Integrated circuit element mounting pad 115a ... Nickel plating layer 115b ... Gold plating layer 116 ... External connection electrode terminal 120 ... Piezoelectric vibration element 121 ... Piezoelectric element plate 122 ... Excitation electrode 123 ... Tip portion 124 ... Lead electrode 130 ... Cover member 131 ... Sealing member 140 ... Integrated circuit element 141 ... Element Electrode for mounting member bonding 141a ... aluminum layer 141b ... intermediate metal layer 141c ... plating bump layer DS ... conductive adhesive 100 ... piezoelectric oscillator

Claims (2)

An element mounting member in which a first frame portion and a second frame portion are provided on one main surface of the substrate portion and the substrate portion to form a recessed space;
A mounting portion is provided on the bottom surface in the recessed space, and a pair of piezoelectric vibration element mounting pads provided on the main surface of the mounting portion;
A piezoelectric vibration element mounted on the piezoelectric vibration element mounting pad;
An integrated circuit element mounting pad provided on the substrate portion exposed in the recess space;
An integrated circuit element provided with an element mounting member bonding electrode for bonding to the integrated circuit element mounting pad;
A lid member for hermetically sealing the recessed space,
The element mounting member bonding electrode includes an aluminum layer, an intermediate metal layer, and a plating bump layer.
The aluminum layer has a thickness of 0.6 to 1.5 μm,
The intermediate metal layer has a thickness of 0.5 to 1.7 μm,
The thickness of the said plating bump layer is 5-30 micrometers, The piezoelectric oscillator characterized by the above-mentioned.   2. The piezoelectric oscillator according to claim 1, wherein the integrated circuit element mounting pad comprises a nickel plating layer and a gold plating layer, and the flatness of the gold plating layer of the integrated circuit element mounting pad is 1.0 μm or less. .

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