JP2011054572A - Photoelectric conversion element, method of manufacturing photoelectric conversion element, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion element by which the photoelectric conversion element superior in photoelectric conversion efficiency can be manufactured; to provide the photoelectric conversion element manufactured by the method of manufacturing the photoelectric conversion element; and to provide an electronic equipment equipped with such a photoelectric conversion element. <P>SOLUTION: A solar cell (photoelectric conversion element) 1 is manufactured through: a first step of preparing a porous electron transport layer 4 installed on one face side of a cathode 3; a second step of forming a dye layer D so as to be in contact with the electron transport layer 4; a third step in which, after supplying a first liquid material containing a first semiconductor material from a side opposite to the cathode 3 of the electron transport 4, a second liquid material containing a second semiconductor material is supplied to form a hole transport layer 5 in contact with the dye layer D; and a fourth step in which an anode 6 opposite to the cathode 3 is formed on the side opposite to the cathode 3 of the hole transport layer 5. In the third step, as the first liquid material, a liquid material having lower viscosity at normal temperatures than that of the second liquid material is used. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a photoelectric conversion element, a photoelectric conversion element, and an electronic device.

In recent years, dye-sensitized solar cells have been proposed as an alternative to amorphous silicon solar cells (see, for example, Patent Document 1).
The solar cell (photoelectric conversion element) described in Patent Literature 1 includes a hole transport layer, a dye layer, and an electron transport layer interposed between an anode and a cathode, and holes generated in the dye layer. And electrons are taken out through a hole transport layer and an electron transport layer, respectively.
In such a solar cell, it is important that the dye layer and the hole transport layer or the electron transport layer are in sufficient contact from the viewpoint of improving the characteristics (power generation efficiency).
For example, when the electron transport layer is porous, the dye layer and the hole transport layer are not sufficiently in contact if the hole transport layer does not sufficiently penetrate into the pores. There arises a problem that the generated holes are not efficiently transferred to the hole transport layer.
When such a problem occurs, the power generation efficiency of the solar cell is extremely lowered.

JP 2004-235240 A

  The objective of this invention is the manufacturing method of the photoelectric conversion element which can manufacture the photoelectric conversion element excellent in photoelectric conversion efficiency, the photoelectric conversion element manufactured by this manufacturing method of a photoelectric conversion element, and an electronic device provided with this photoelectric conversion element Is to provide.

Such an object is achieved by the present invention described below.
The method for producing a photoelectric conversion element of the present invention is a method for producing a photoelectric conversion element comprising a first carrier transport layer, a dye layer, and a second carrier transport layer interposed between an anode and a cathode. Because
A first step of forming the first carrier transport layer;
A second step of forming the dye layer so as to contact the first carrier transport layer;
A third step of forming the second carrier transport layer so as to contact the dye layer,
At least one of the first carrier transport layer and the second carrier transport layer is formed by a liquid phase film formation method.
Thereby, the photoelectric conversion element excellent in photoelectric conversion efficiency can be manufactured. In addition, the carrier transport layer can be formed easily and inexpensively without requiring a large facility.
In the method for producing a photoelectric conversion element of the present invention, the first carrier transport layer is a porous electron transport layer, and the second carrier transport layer is a hole transport layer,
In the third step, the hole transport layer is preferably formed by a liquid phase film formation method.
Thereby, the photoelectric conversion element which is more excellent in photoelectric conversion efficiency can be manufactured.
In the method for producing a photoelectric conversion element of the present invention, in the third step, the hole transport layer is a first liquid material containing a first semiconductor material from the side opposite to the cathode of the electron transport layer. After supplying the second liquid material containing the second semiconductor material,
It is preferable to use a material having a lower viscosity at room temperature than the second liquid material as the first liquid material.
Thereby, the photoelectric conversion element which is more excellent in photoelectric conversion efficiency can be manufactured.

In the method for producing a photoelectric conversion element of the present invention, in the third step, it is preferable to fill the first semiconductor material so as to fill vacancies in the electron transport layer.
Thereby, even when a relatively high viscosity material is used as the second liquid material, a sufficient contact area between the dye layer and the hole transport layer can be ensured.
In the method for producing a photoelectric conversion element of the present invention, the viscosity of the first liquid material at normal temperature is preferably 1 to 5 cP.
Thereby, a 1st liquid material comes to reach | attain to the deep part of the hole of an electron carrying layer more reliably, and the photoelectric conversion efficiency of the obtained photoelectric conversion element improves more.

In the photoelectric conversion element manufacturing method of the present invention, in the third step, the first liquid material is supplied while vibration is applied to the electron transport layer and / or the first liquid material. preferable.
As a result, the first liquid material can reach the deep hole portion of the electron transport layer more reliably, and the effect of improving the photoelectric conversion efficiency of the obtained photoelectric conversion element can be exhibited more remarkably. Become.

In the method for producing a photoelectric conversion element of the present invention, it is preferable to apply the vibration using ultrasonic waves.
As a result, the first liquid material can be more easily reached to a deep hole portion of the electron transport layer.
In the method for producing a photoelectric conversion element of the present invention, the first liquid material has a viscosity increase rate accompanying the increase in concentration of the first semiconductor material, and the concentration of the second semiconductor material in the second liquid material. The viscosity is preferably lower than the rate of increase in viscosity accompanying the increase.
Thereby, when the hole transport layer is formed, even if the solvent gradually evaporates from the first liquid material, the viscosity of the first liquid material can be kept sufficiently low, and the first liquid material The handling of the material becomes easy, and the hole transport layer can be formed more easily and reliably.

In the method for producing a photoelectric conversion element of the present invention, it is preferable that both the first semiconductor material and the second semiconductor material are organic polymers.
An organic polymer is a preferable material in terms of excellent hole transport capability, excellent coverage, and film formability.
In the method for manufacturing a photoelectric conversion element of the present invention, the first semiconductor material and the second semiconductor material are the same kind of organic polymer, and the weight average molecular weight of the first semiconductor material is the second semiconductor. It is preferably smaller than the weight average molecular weight of the material.
Thereby, the interface is not formed in the hole transport layer, or even when the interface is formed, the adhesion between the two organic polymers at the interface becomes extremely high. As a result, hole transport in the entire hole transport layer is performed more smoothly and reliably.

In the method for producing a photoelectric conversion element of the present invention, the weight average molecular weight of the first semiconductor material is preferably 10,000 or less.
Accordingly, even when the concentration of the first semiconductor material in the first liquid material is relatively high or when the concentration is unintentionally increased, the viscosity of the first liquid material can be kept low. It becomes.

In the method for producing a photoelectric conversion element of the present invention, the weight average molecular weight of the second semiconductor material is preferably 15000 or more.
Such an organic polymer having a large molecular weight is particularly excellent in hole transport ability. In addition, it is not preferable that the molecular weight is increased beyond the upper limit value because the types of solvents capable of dissolving them are extremely reduced.

In the method for producing a photoelectric conversion element of the present invention, the organic polymer is preferably a polyarylamine, a fluorene-arylamine copolymer, a fluorene-bithiophene copolymer, or a derivative thereof.
Even if these organic polymers have a relatively low molecular weight, they are excellent in the hole transport ability, so that the resulting hole transport layer is also particularly excellent in the hole transport ability.

In the method for manufacturing a photoelectric conversion element of the present invention, it is preferable that the first semiconductor material and the second semiconductor material are of the same type.
Thereby, the interface is not formed in the hole transport layer, or even when the interface is formed, the adhesion between the two semiconductor materials at the interface becomes extremely high. As a result, hole transport in the entire hole transport layer is performed more smoothly and reliably.

In the method for producing a photoelectric conversion element of the present invention, the first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer,
In the first step, the hole transport layer is preferably formed by a liquid phase film formation method.
Thereby, the range of selection of the constituent material of the electron transport layer can be expanded, and a photoelectric conversion element excellent in power generation efficiency can be obtained by appropriately selecting and combining the dyes.

In the method for producing a photoelectric conversion element of the present invention, the hole transport layer is preferably composed of an organic polymer as a main material.
Organic polymers are preferred because of their excellent hole transport capability. In addition, since organic polymers are relatively excellent in chemical resistance (solvent resistance), when a dye layer is formed by a liquid phase film forming method, the range of selection of a liquid agent used for preparing a dye layer forming material Spread. Moreover, the breadth of selection of the liquid agent is widened, so that the breadth of choice of the dye used in the dye layer is also widened.

In the method for producing a photoelectric conversion element of the present invention, the organic polymer preferably has a weight average molecular weight of 8000 or more.
Thus, the said effect can be improved more by using a thing with a comparatively large weight average molecular weight.
In the method for producing a photoelectric conversion element of the present invention, the organic polymer preferably has an arylamine skeleton and / or a fluorene skeleton.
These organic polymers are particularly preferable because they have excellent hole transport capability and excellent chemical resistance.

In the method for producing a photoelectric conversion element of the present invention, in the second step, the dye layer is formed by a liquid phase film forming method, and the hole transport layer is swollen in preparing a liquid material for forming the dye layer. It is preferable to use the obtained liquid agent.
As a result, the interface between the dye layer and the hole transport layer can be microscopically intruded, and the contact area between these layers can be increased. For this reason, the transfer of holes from the dye layer to the hole transport layer is performed more smoothly, and the power generation efficiency of the photoelectric conversion element can be further improved.

In the method for producing a photoelectric conversion element of the present invention, it is preferable to use a droplet discharge method as a liquid phase film forming method for forming the hole transport layer.
By using the droplet discharge method, the hole transport layer can be formed with high dimensional accuracy without wasting the liquid material.
In the method for producing a photoelectric conversion element of the present invention, in the second step, the dye layer is preferably formed by a liquid phase film forming method.
According to the liquid phase film formation method, a dye layer can be formed easily and inexpensively without requiring large-scale equipment.

In the method for producing a photoelectric conversion element of the present invention, it is preferable to use a droplet discharge method as a liquid phase film forming method for forming the dye layer.
By using the droplet discharge method, the dye layer can be formed with high dimensional accuracy without wasting the liquid material.
In the method for manufacturing a photoelectric conversion element of the present invention, it is preferable to have a step of forming a bank for defining the shape of the layer prior to forming the target layer.
Thereby, the target layer can be formed with high dimensional accuracy.

The photoelectric conversion element of the present invention is manufactured by the method for manufacturing a photoelectric conversion element of the present invention.
Thereby, the photoelectric conversion element excellent in photoelectric conversion efficiency is obtained.
The electronic device of the present invention includes the photoelectric conversion element of the present invention.
As a result, a highly reliable electronic device can be obtained.

It is a fragmentary sectional view showing a 1st embodiment at the time of applying a photoelectric conversion element of the present invention to a solar cell. It is an enlarged view which shows the cross section of central part vicinity of the thickness direction of the solar cell shown in FIG. It is a schematic diagram which shows the structure of an electron carrying layer and a pigment | dye layer. It is a longitudinal cross-sectional view which shows 2nd Embodiment at the time of applying the photoelectric conversion element of this invention to a solar cell. It is an enlarged view which shows the cross section of the center part vicinity of the thickness direction of the solar cell shown in FIG. FIG. 5 is a diagram (longitudinal sectional view) for explaining a manufacturing process of the solar cell shown in FIG. 4. It is a top view which shows the calculator to which the electronic device of this invention is applied. It is a perspective view which shows the mobile telephone (PHS is also included) to which the electronic device of this invention is applied.

DESCRIPTION OF EMBODIMENTS Hereinafter, a preferred embodiment of a method for producing a photoelectric conversion element, a photoelectric conversion element, and an electronic device according to the present invention will be described in detail with reference to the accompanying drawings.
First, the case where the photoelectric conversion element of this invention is applied to a solar cell is demonstrated to an example.
<First Embodiment>
First, 1st Embodiment at the time of applying the photoelectric conversion element of this invention to a solar cell is described.
FIG. 1 is a partial cross-sectional view showing a first embodiment when the photoelectric conversion element of the present invention is applied to a solar cell, and FIG. 2 shows a cross section near the central portion in the thickness direction of the solar cell shown in FIG. FIG. 3 is an enlarged view and FIG. 3 is a schematic diagram showing the configuration of the electron transport layer and the dye layer. In the following description, for convenience of explanation, the upper side is “upper” and the lower side is “lower” in FIGS.

A solar cell 1 shown in FIG. 1 includes a cathode (first electrode) 3 provided on a substrate 2, an anode (second electrode) 6 disposed so as to face the cathode 3, these electrodes 3, 6, an electron transport layer (first carrier transport layer) 4 positioned on the cathode 3 side, a dye layer D in contact with the electron transport layer 4, and a hole transport layer (second layer in contact with the dye layer D) Carrier transport layer) 5.
Hereinafter, the configuration of each unit will be described. In the following description, for convenience of explanation, the upper side is “upper” and the lower side is “lower” in FIGS.

The substrate 2 is for supporting the cathode 3, the electron transport layer 4, the dye layer D, the hole transport layer 5, and the anode 6, and is composed of a plate-shaped member.
In the solar cell 1 of the present embodiment, as shown in FIG. 1, for example, light such as sunlight (hereinafter simply referred to as “light”) is incident (irradiated) from the substrate 2 and the cathode 3 side described later. To use). For this reason, each of the substrate 2 and the cathode 3 is preferably substantially transparent (colorless transparent, colored transparent or translucent). Thereby, light can be efficiently made to reach the dye layer D described later.

Examples of the constituent material of the substrate 2 include glass materials, ceramic materials, resin materials such as polycarbonate (PC) and polyethylene terephthalate (PET), and metal materials such as aluminum.
The average thickness of the substrate 2 is appropriately set depending on its constituent material, the use of the solar cell 1 and the like, and is not particularly limited, but can be set as follows, for example.

When the substrate 2 is made of a hard material, the average thickness is preferably about 0.1 to 1.5 mm, and more preferably about 0.8 to 1.2 mm. Moreover, when the board | substrate 2 is comprised with a flexible material, it is preferable that the average thickness is about 0.5-150 micrometers, and it is more preferable that it is about 10-75 micrometers.
In addition, the board | substrate 2 can also be abbreviate | omitted as needed.

A cathode 3 is provided on the substrate 2 (one surface side of the substrate 2). The cathode 3 receives electrons generated in the dye layer D, which will be described later, via the electron transport layer 4 and transmits the electrons to an external circuit 10 connected thereto.
Examples of the constituent material of the cathode 3 include indium tin oxide (ITO), metal oxide materials such as tin oxide containing fluorine atoms (FTO), indium oxide (IO), and tin oxide (SnO ₂ ), aluminum, Examples thereof include metal materials such as nickel, cobalt, platinum, silver, gold, copper, molybdenum, titanium, tantalum or alloys containing these, carbon materials such as graphite, and one or more of these materials. It can be used in combination (for example, as a multi-layer laminate).

The average thickness of the cathode 3 is appropriately set depending on the constituent material, the use of the solar cell 1 and the like, and is not particularly limited. For example, the average thickness can be set as follows.
When the cathode 3 is made of a metal oxide material (transparent conductive metal oxide material), the average thickness is preferably about 0.05 to 5 μm, and preferably about 0.1 to 1.5 μm. More preferred. Moreover, when the cathode 3 is comprised with a metal material or a carbon material, it is preferable that the average thickness is about 0.01-1 micrometer, and it is more preferable that it is about 0.03-0.1 micrometer.

The cathode 3 is not limited to the illustrated shape, and may be, for example, a shape having a plurality of comb teeth. In this case, since the light passes between the plurality of comb teeth and reaches the dye layer D, the cathode 3 may not be substantially transparent. Thereby, the selection range of the constituent material of the cathode 3, a formation method (manufacturing method), etc. can be expanded.
The cathode 3 can also be used by combining (for example, laminating) such a comb-like electrode and a layered electrode.

On the cathode 3, a film-like barrier layer 8 and a porous electron transport layer 4 are provided in this order.
The electron transport layer 4 has a function of transporting at least electrons generated in the dye layer D.
As a constituent material of the electron transport layer 4, various inorganic or organic n-type semiconductor materials can be used alone or in combination of two or more. Among these, examples of the inorganic n-type semiconductor material include titanium oxide such as titanium dioxide (TiO ₂ ), titanium monoxide (TiO), and dititanium trioxide (Ti ₂ O ₃ ), zinc oxide (ZnO), and oxide. An oxide semiconductor material such as tin (SnO ₂ ) is suitable.

Among these, as a constituent material of the electron transport layer 4, a material containing titanium dioxide as a main component is preferable. Titanium dioxide is particularly excellent in the ability to transport electrons and has high sensitivity to light, so that the electron transport layer 4 itself can generate electrons. As a result, the power generation efficiency (photoelectric conversion efficiency) of the solar cell 1 is further improved.
In addition, since the crystal structure of titanium dioxide is stable, the electron transport layer 4 containing titanium dioxide as a main material is stable with little secular change (deterioration) even when exposed to a harsh environment. There is an advantage that the performance can be obtained continuously for a long time.

Further, as titanium dioxide, any of those whose crystal structure is mainly composed of anatase type, those composed mainly of rutile type, and a mixture of anatase type and rutile type may be used. Good.
When rutile titanium dioxide and anatase titanium dioxide are mixed, the mixing ratio is not particularly limited, but is preferably about 95: 5 to 5:95 by weight, and 80:20 More preferably, it is about ˜20: 80.

The electron transport layer 4 is composed of, for example, an aggregate of n-type semiconductor material granules (particles), tube-like bodies, or a mixture thereof as described above.
In particular, by using a tubular body, the propagation speed of electrons in the electron transport layer 4 can be improved, and as a result, recombination of electrons and holes can be prevented or suppressed more reliably. In addition, the specific surface area of the electron transport layer 4 can be further increased, and as a result, the amount of dye bonded is further increased. For this reason, the power generation efficiency of the solar cell 1 can be further improved.

When using a granular material, it is preferable that the average particle diameter is about 1 nm-1 micrometer, and it is more preferable that it is about 5-50 nm. Moreover, when using a tubular body, it is preferable to make the average length into the said range. Thereby, the said effect can be improved more.
Further, on the outer surface of the electron transport layer 4 and the inner surface of the holes 41, a coat layer having a function of preventing or suppressing electrons transferred from the dye layer D from moving again to the dye layer D (reverse electron transfer). May be formed. Thereby, recombination of electrons and holes can be prevented or suppressed more reliably.

This coat layer is a substance having a lower end potential of the conduction band lower than the lower end potential of the conduction band of the n-type semiconductor material constituting the electron transport layer 4, in other words, n constituting the electron transport layer 4. It can be composed of a substance having a lower end potential of the conduction band on the valence band side of the lower end potential of the conduction band of the type semiconductor material.
As such a substance, when an n-type semiconductor material containing titanium dioxide as a main component is used, a metal oxide is preferable. For example, zirconium oxide, strontium titanate, niobium oxide, magnesium oxide, zinc oxide, One or more of tin oxides can be used in combination.
The average thickness of such a coat layer is preferably about 0.1 to 10 nm.

Further, it is preferable that these are sufficiently diffused and bonded at the contact interface between the granular bodies, between the tubular bodies, and between the granular bodies and the tubular bodies. Thereby, in the electron carrying layer 4, it is prevented that the movement of an electron is suppressed and the recombination of an electron and a hole can be prevented or suppressed more reliably.
This can be performed, for example, by forming the electron transport layer 4, dissolving the vicinity of the surface of the granular body or tube-shaped body, and then re-baking the electron transport layer 4 at about 400 to 500 ° C.

For dissolution near the surface of the granular or tubular body, for example, an acid solution such as hydrochloric acid, nitric acid, acetic acid or hydrofluoric acid, or an alkaline solution containing sodium hydroxide, magnesium hydroxide or potassium hydroxide is used. be able to.
The porosity of the electron transport layer 4 is not particularly limited, but is preferably about 5 to 90%, more preferably about 15 to 50%, and about 20 to 40%. Further preferred. By setting the porosity of the electron transport layer 4 in such a range, the specific surface area of the electron transport layer 4 can be sufficiently increased. Thereby, the formation area (formation region) of the dye layer D (see below) formed on the outer surface of the electron transport layer 4 and the inner surface of the hole 41 can be sufficiently increased. For this reason, in the dye layer D, sufficient electrons can be generated, and these electrons can be efficiently transferred to the electron transport layer 4. As a result, the power generation efficiency of the solar cell 1 can be further improved.

Moreover, although the average thickness of the electron carrying layer 4 is not specifically limited, It is preferable that it is about 0.1-300 micrometers, It is more preferable that it is about 0.5-100 micrometers, It is about 1-25 micrometers. Further preferred.
The barrier layer 8 is set to have a lower porosity than the electron transport layer 4, thereby preventing or suppressing contact between the hole transport layer 5 (first semiconductor material) and the cathode 3 described later. To do. Thereby, generation | occurrence | production of leakage current can be prevented and the fall of the luminous efficiency of the solar cell 1 can be prevented.

Here, when the porosity of the barrier layer 8 is A [%] and the porosity of the electron transport layer 4 is B [%], B / A is preferably 1.1 or more. More preferably, it is more preferably 10 or more. Thereby, the barrier layer 8 and the electron transport layer 4 can each exhibit their functions more suitably.
Specifically, the porosity A of the barrier layer 8 is preferably 20% or less, more preferably 5% or less, and even more preferably 2% or less. That is, the barrier layer 8 is preferably a dense layer. Thereby, the said effect can be improved more.

  Further, the thickness ratio between the barrier layer 8 and the electron transport layer 4 is not particularly limited, but is preferably about 1:99 to 60:40, and more preferably about 10:90 to 40:60. preferable. In other words, the ratio of the thickness occupied by the barrier layer 8 in the whole of the barrier layer 8 and the electron transport layer 4 is preferably about 1 to 60%, and more preferably about 10 to 40%. As a result, the barrier layer 8 can more reliably prevent or suppress a short circuit due to contact between the cathode 3 and the hole transport layer 5, and the light arrival rate to the dye layer D can be reduced. It can prevent suitably.

Specifically, the average thickness (film thickness) of the barrier layer 8 is preferably about 0.01 to 10 μm, more preferably about 0.1 to 5 μm, and about 0.5 to 2 μm. More preferably. Thereby, the said effect can be improved more.
The constituent material of the barrier layer 8 is not particularly limited. For example, in addition to titanium oxide which is a main constituent material of the electron transport layer 4, for example, SrTiO ₃ , ZnO, SiO ₂ , Al ₂ O ₃ , SnO ₂ , CdS, CdSe, TiC, Si ₃ N ₄ , SiC, B ₄ N, BN and the like can be mentioned, and one or more of these can be used in combination.

  Among these, the constituent material of the barrier layer 8 is preferably one having electric conductivity equivalent to that of the electron transport layer 4, and more preferably one containing titanium dioxide as a main component. By configuring the barrier layer 8 with such a material, electrons generated in the dye layer D can be more efficiently transferred from the electron transport layer 4 to the barrier layer 8, and as a result, the power generation efficiency of the solar cell 1 is improved. Can be further improved.

The resistance value in the thickness direction of the barrier layer 8 and the electron transport layer 4 is not particularly limited, but the resistance value in the thickness direction of the entire barrier layer 8 and the electron transport layer 4 (a laminated body thereof) is 100Ω / cm ² or more is preferable, and 1 kΩ / cm ² or more is more preferable. Thereby, the leak (short circuit) between the cathode 3 and the hole transport layer 5 can be prevented or suppressed more reliably, and the decrease in power generation efficiency of the solar cell 1 can be more reliably prevented.

  Further, the interface between the barrier layer 8 and the electron transport layer 4 may not be clear or may be clear, but it is preferable that the interface is not clear (unclear). That is, it is preferable that the barrier layer 8 and the electron transport layer 4 are integrally formed and partially overlap each other. Thereby, the transmission (delivery) of electrons between the barrier layer 8 and the electron transport layer 4 can be performed more reliably (efficiently).

Further, the barrier layer 8 and the electron transport layer 4 are formed using materials having the same composition (for example, a material mainly composed of titanium dioxide), and only their porosity is different, that is, the electron transport layer. 4 may be configured such that a part of 4 functions as the barrier layer 8.
In this case, the electron transport layer 4 has a dense portion and a rough portion in the thickness direction, and the dense portion functions as the barrier layer 8.

In this case, the dense portion is preferably formed on the cathode 3 side of the electron transport layer 4, but can also be formed at an arbitrary position in the thickness direction.
Further, in this case, the electron transport layer 4 may have a configuration having a portion where a rough portion is sandwiched between dense portions or a configuration having a portion where a dense portion is sandwiched between rough portions. Good.
Such an electron transport layer 4 is provided with the dye layer D in contact with the dye by, for example, adsorbing, bonding (covalent bond, coordinate bond), or the like.

The dye layer D is a light-receiving layer that generates electrons and holes by receiving light, and is formed along the outer surface of the electron transport layer 4 and the inner surface of the holes 41 as shown in FIG. Thereby, the electrons generated in the dye layer D can be efficiently transferred to the electron transport layer 4.
As the pigment constituting the pigment layer D, pigments and dyes can be used alone or in combination. In addition, it is preferable to use a dye from the viewpoint that the adsorptivity to the electron transport layer 4 (bonding property to the electron transport layer 4) is more excellent in that the deterioration and deterioration with time are less.

  Here, examples of the pigment include phthalocyanine pigments such as phthalocyanine green and phthalocyanine blue, fast yellow, disazo yellow, condensed azo yellow, benzoimidazolone yellow, dinitroaniline orange, benzimidazolone orange, toluidine red, and permanent carmine. Azo pigments such as permanent red, naphthol red, condensed azo red, benzimidazolone carmine, benzimidazolone brown, anthraquinone pigments such as anthrapyrimidine yellow and anthraquinonyl red, azomethine pigments such as copper azomethine yellow, quinophthalone yellow Quinophthalone pigments such as isoindoline yellow, nitroso pigments such as nickel dioxime yellow, perinone Perinone pigments such as orange, quinacridone magenta, quinacridone maroon, quinacridone scarlet, quinacridone pigments such as quinacridone red, perylene pigments such as perylene red and perylene maroon, pyrrolopyrrole pigments such as diketopyrrolopyrrole red, dioxazine violet Organic pigments such as dioxazine pigments such as carbon black, lamp black, furnace black, ivory black, carbon pigments such as graphite and fullerene, chromate pigments such as chrome lead and molybdate orange, cadmium yellow, cadmium lith Pong yellow, cadmium orange, cadmium lithopone orange, silver vermilion, cadmium red, cadmium lithopon red, sulfide pigments such as sulfide, ocher, titanium yellow, titanium barium Neckel yellow, red rose, red lead, amber, brown iron oxide, zinc iron chrome brown, chromium oxide, cobalt green, cobalt chrome green, titanium cobalt green, cobalt blue, cerulean blue, cobalt aluminum chrome blue, iron black, manganese ferrite black, Oxide pigments such as cobalt ferrite black, copper chrome black, copper chrome manganese black, hydroxide pigments such as viridian, ferrocyanide pigments such as bitumen, silicate pigments such as ultramarine, cobalt violet, minerals Examples thereof include phosphate pigments such as violet, and other inorganic pigments such as cadmium sulfide and cadmium selenide, and one or more of these can be used in combination.

On the other hand, as the dye, for _{example, RuL 2 (SCN) 2,} RuL ( manufactured by Solaronics, _{Inc.) 2 Cl 2, RuL 2 CN} 2, Rutenium535-bisTBA, [RuL 2 metal complexes such as _{(NCS 2) 2 H 2} O Examples include dyes, cyan dyes, xanthene dyes, azo dyes, hibiscus dyes, blackberry dyes, raspberry dyes, pomegranate juice dyes, chlorophyll dyes, and the like. Use one or more of these in combination. Can do. In addition, L in the said composition formula shows 2,2'-bipyridine, or its derivative (s).

A hole transport layer 5 is provided in contact with the dye layer D. The hole transport layer 5 has a function of capturing and transporting holes generated in the dye layer D.
Although the hole transport layer 5 has a layer shape as a whole, a part of the hole transport layer 5 enters the holes 41 of the electron transport layer 4 on the electron transport layer 4 side as shown in FIG. As a result, the contact area between the dye layer D and the hole transport layer 5 can be increased, and holes generated in the dye layer D can be transferred to the hole transport layer 5 more efficiently. . As a result, the power generation efficiency of the solar cell 1 can be further improved.

  As a constituent material of the hole transport layer 5, various p-type semiconductor materials are used. For example, polyarylamine, fluorene-arylamine copolymer, fluorene-bithiophene copolymer, poly (N-vinylcarbazole) ), Organic polymers such as polyvinylpyrene, polyvinylanthracene, polythiophene, polyalkylthiophene, polyhexylthiophene, poly (p-phenylene vinylene), polytinylene vinylene, pyrene formaldehyde resin, ethyl carbazole formaldehyde resin or derivatives thereof, Organic polymers such as dendrimers with thiophene skeleton, naphthalene, anthracene, tetracene, pentacene, hexacene, phthalocyanine, perylene, hydrazone, triphenylmethane, diphenylmethane, styrene Examples include organic low molecules such as ben, arylvinyl, pyrazoline, triphenylamine, triarylamine, oligothiophene, phthalocyanine or derivatives thereof, and inorganic materials such as CuI, AgI, AgBr, and CuSCN. Species or a combination of two or more can be used.

Moreover, the said organic polymer can also be used as a mixture with another polymer. As an example, the polythiophene-containing mixture includes poly (3,4-ethylenedioxythiophene / styrene sulfonic acid) (PEDOT / PSS).
Further, the average thickness of the hole transport layer 5 (excluding the part that has entered the holes 41) is not particularly limited, but is preferably about 1 to 500 μm, more preferably about 10 to 300 μm. More preferably, the thickness is about 10 to 30 μm.

On the hole transport layer 5 (on the side opposite to the cathode 3), an anode 6 facing the cathode 3 is provided.
Examples of the constituent material of the anode 6 include metals such as aluminum, nickel, cobalt, platinum, silver, gold, copper, molybdenum, titanium, and tantalum, alloys containing them, and various carbon materials such as graphite. These can be used, and one or more of these can be used in combination.

The average thickness of the anode 6 is appropriately set depending on the constituent material, the use of the solar cell 1 and the like, and is not particularly limited.
In such a solar cell 1, when light enters, electrons are excited mainly in the dye layer D, and electrons (e ⁻ ) and holes (h ⁺ ) are generated. Among these, electrons move to the electron transport layer 4, holes move to the hole transport layer 5, and a potential difference (photoelectromotive force) is generated between the cathode 3 and the anode 6. Current (photoexcitation current) flows.

In such a solar cell 1, when a voltage of 0.5 V is applied so that the cathode 3 is positive and the anode 6 is negative, the resistance value is 100 Ω / cm ² or more (preferably 1 kΩ / cm 2). ² or more) is more preferable. The solar cell 1 having such characteristics indicates that a short circuit (leakage) due to contact between the cathode 3 and the hole transport layer 5 is suitably prevented or suppressed, and its power generation efficiency (Photoelectric conversion efficiency) can be further improved.
Such a solar cell 1 can be manufactured as follows, for example.

[1] A laminate in which the substrate 2, the cathode 3, the barrier layer 8, and the electron transport layer 4 are laminated is prepared (first step).
[1-1] First, the substrate 2 is prepared, and the cathode 3 is formed on the substrate 2.
The cathode 3 can be formed by, for example, a vapor deposition method, a sputtering method, a printing method, or the like.

[1-2] Next, the barrier layer 8 is formed on the cathode 3.
The barrier layer 8 is formed by, for example, a sol-gel method, a vapor deposition (vacuum vapor deposition) method, a sputtering method (high frequency sputtering, DC sputtering), a spray pyrolysis method, a jet mold (plasma spraying) method, a CVD method, or the like. Among these, the sol-gel method is preferable.

  This sol-gel method is very easy to operate. In addition, by using a sol-gel method, a barrier layer forming material for forming the barrier layer 8 is, for example, a dipping method, dripping, doctor blade method, spin coating method, brush coating, spray coating method, roll coating. The barrier layer 8 having a desired film thickness can be formed relatively easily without requiring a large-scale apparatus.

In particular, it is preferable to use a metal organic deposition (or decomposition) method (hereinafter abbreviated as “MOD method”), which is a kind of sol-gel method, for forming the barrier layer 8.
According to this MOD method, the reaction of the precursor of the constituent material of the barrier layer 8 (for example, hydrolysis, polycondensation, etc.) is prevented in the barrier layer forming material. (With good reproducibility). Further, the obtained barrier layer 8 can be dense (with a porosity within the above range).
When the barrier layer 8 is composed of titanium dioxide as a main material, as a precursor thereof, for example, an organic titanium compound such as titanium tetraisopropoxide (TPT), titanium tetramethoxide, titanium tetraethoxide, titanium tetrabutoxide, or the like is used. Can be used.

[1-3] Next, the electron transport layer 4 is formed on the barrier layer 8.
The electron transport layer 4 is, for example, supplied with the material for forming an electron transport layer containing the granular material and / or the tube-like material as described above on the barrier layer 8 and fired after the dedispersion medium. Can be formed.
As a method for supplying the electron transport layer forming material, various coating methods as described above can be used.

[2] Next, the dye layer D is formed so as to be in contact with the electron transport layer 4 (second step).
The dye layer D can be formed, for example, by bringing a liquid containing a dye into contact with the electron transport layer 4 and then removing the solvent (or dedispersing medium).
As a result, the dye is adsorbed and bonded to the outer surface of the electron transport layer 4 and the inner surface of the hole 41, for example, and the dye layer D is formed along these surfaces.

Examples of the method of bringing the liquid containing the dye into contact with the electron transport layer 4 include a method of immersing the laminate in a liquid containing the dye (immersion method), and a method of applying a liquid containing the dye to the electron transport layer 4 (application). Method), a method of supplying a liquid containing a pigment to the electron transport layer 4 in a shower form, and the like.
Examples of the solvent (or dispersion medium) for preparing the liquid containing the pigment include various water, methanol, ethanol, isopropyl alcohol, acetonitrile, ethyl acetate, ether, methylene chloride, NMP (N-methyl-2-pyrrolidone), and the like. 1 type or 2 types or more of these can be used in combination.

Examples of the solvent removal method include a method in which the solvent is left under atmospheric pressure or reduced pressure, and a method in which a gas such as air or nitrogen gas is blown.
In addition, you may heat-process with respect to a laminated body at the temperature of about 60-100 degreeC for about 0.5 to 2 hours as needed. Thereby, a pigment | dye can be adsorb | sucked (bonded) to the electron carrying layer 4 more firmly.

[3] Next, the hole transport layer 5 is formed so as to be in contact with the dye layer D (third step).
The hole transport layer 5 supplies the first liquid material containing the first semiconductor material from the upper side of the electron transport layer 4 on which the dye layer D is formed (the side opposite to the cathode 3 of the electron transport layer 4). After that, the second liquid material containing the second semiconductor material is supplied and formed. That is, the hole transport layer 5 is formed by a liquid phase film forming method. By forming the hole transport layer 5 using the liquid phase film formation method, the contact area between the dye layer D and the hole transport layer 5 can be increased, and the efficiency from the dye layer D to the hole transport layer 5 can be increased. Holes are often delivered and recombination of holes and electrons can be reliably prevented. For this reason, the solar cell 1 has improved power generation efficiency (photoelectric conversion efficiency).
At this time, in this embodiment, a material having a lower viscosity at room temperature than the second liquid material is used as the first liquid material. As a result, the first liquid material (first semiconductor material) reaches the deep part of the hole 41 of the electron transport layer 4, that is, the barrier layer 8 or the vicinity thereof. As a result, the contact area between the dye layer D and the hole transport layer 5 can be further increased, and holes can be more efficiently transferred from the dye layer D to the hole transport layer 5. Recombination with electrons can be prevented more reliably. For this reason, as for the solar cell 1, the power generation efficiency (photoelectric conversion efficiency) improves more.

The viscosity of the first liquid material at room temperature is preferably about 1 to 5 cP, and more preferably about 1 to 3 cP. As a result, the first liquid material reaches the deeper portion of the hole 41 of the electron transport layer 4 more reliably, and the above-described effect is more remarkably exhibited.
Although the supply amount of the first semiconductor material is arbitrary, it is preferable to fill the first semiconductor material so as to fill the holes 41 of the electron transport layer 4. Thereby, even when a relatively high viscosity material is used as the second liquid material, a sufficient contact area between the dye layer D and the hole transport layer 5 can be ensured.

At this time, it is preferable to supply the first liquid material while applying vibration to one or both of the electron transport layer 4 and the first liquid material. As a result, the first liquid material reaches the deeper portion of the hole 41 of the electron transport layer 4 more reliably, and the above-described effect is more remarkably exhibited.
As a method of applying this vibration, for example, a method of applying an ultrasonic wave to the substrate 2 (electron transport layer 4) or a method of applying (supplying) a droplet (first liquid material) to which an ultrasonic wave has been applied. Examples thereof include a method using ultrasonic waves and a method of mechanically impacting, and a method using ultrasonic waves is particularly preferable. As a result, the first liquid material can be more easily reached to the deep portion of the hole 41 of the electron transport layer 4.

  The first liquid material only needs to have a lower viscosity at room temperature than the second liquid material, and in particular, the rate of increase in viscosity associated with the increase in the concentration of the first semiconductor material is that of the second liquid material. The viscosity is preferably lower than the rate of increase in viscosity accompanying the increase in concentration of the second semiconductor material. Thereby, when the hole transport layer 5 is formed, even if the solvent gradually evaporates from the first liquid material, the viscosity of the first liquid material can be kept sufficiently low. The handling of the liquid material becomes easy and the hole transport layer 5 can be formed more easily and reliably.

  In addition, as the first semiconductor material and the second semiconductor material, combinations thereof are arbitrarily selected from the materials described above so that excellent characteristics can be exhibited in the hole transport layer 5. As the first semiconductor material and the second semiconductor material, it is preferable to use an organic polymer. An organic polymer is a preferable material in terms of excellent hole transport capability, excellent coverage, and film formability.

When both organic polymers are used as the first semiconductor material and the second semiconductor material, the viscosity of the first liquid material and the second liquid material is adjusted by, for example, the weight average molecular weight of the organic polymer, It can be carried out by appropriately setting at least one condition among the kind of organic polymer, the concentration of organic polymer, the kind of solvent, the process temperature at the time of coating, and the like.
As an example, for example, I: the same type of organic polymer is used as the first semiconductor material and the second semiconductor material, and the weight average molecular weight of the first semiconductor material is higher than the weight average molecular weight of the second semiconductor material A method of selecting a small material, II: a method of selecting a dendrimer as the first semiconductor material, and a method of selecting an organic polymer as the second semiconductor material, etc. are mentioned, and it is particularly preferable to use the method I.

Here, in general, when the hole transport layer 5 is formed using two different semiconductor materials, an interface is formed between these semiconductor materials. However, according to the method I, since the same kind of organic polymer is used as the first semiconductor material and the second semiconductor material, the interface is not formed, or even if an interface is formed, The adhesion of the polymer (semiconductor material) is extremely high. In addition, since the second semiconductor material has a relatively large molecular weight, it has excellent film formability, and a uniform and homogeneous layer is formed on the anode 6 side. For this reason, the hole transport in the whole hole transport layer 5 is smoothly and reliably performed. Moreover, it can prevent that the mechanical strength of the positive hole transport layer 5 falls, and can improve the durability and reliability of the solar cell 1.
In the case of I, the weight average molecular weight of the first semiconductor material is preferably 10,000 or less, more preferably about 1000 to 8000. Accordingly, even when the concentration of the first semiconductor material in the first liquid material is relatively high or when the concentration is unintentionally increased, the viscosity of the first liquid material can be kept low. It becomes.

  On the other hand, the weight average molecular weight of the second semiconductor material is preferably 15000 or more, more preferably about 17000 to 25000. Such an organic polymer having a large molecular weight is particularly excellent in hole transport ability. In addition, it is not preferable that the molecular weight is increased beyond the upper limit value because the types of solvents capable of dissolving them are extremely reduced.

  As such an organic polymer, polyarylamine, a fluorene-arylamine copolymer, a fluorene-bithiophene copolymer, or a derivative thereof is particularly preferably used among those described above. Even if these organic polymers have a relatively low molecular weight, they are excellent in the hole transport ability, so that the resulting hole transport layer 5 is also particularly excellent in the hole transport ability.

Solvents for preparing the first liquid material and the second liquid material may be appropriately selected as long as they can dissolve the first semiconductor material and the second semiconductor material, respectively, and are not particularly limited.
In the case where the organic polymer as described above is used as each of the first semiconductor material and the second semiconductor material, for example, a fragrance such as benzene, toluene, xylene, trimethylbenzene, tetramethylbenzene, and cyclohexylbenzene. Group solvents, halogenated solvents such as chlorobenzene and bromobenzene, chloroform and the like, and these are preferably used alone or in combination.

  In particular, for the preparation of the first liquid material, it is preferable to use a solvent having a high solubility and a low boiling point because the aggregation of the first semiconductor material can be suppressed. As such a solvent, for example, toluene, chloroform, benzene, cyclohexane, methylcyclohexane, methylcyclopentane, cyclohexene or a mixed solvent containing these is suitable.

  Moreover, as a method of supplying the first liquid material and the second liquid material, for example, a dipping method, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a wire bar coating method, Examples thereof include a roll coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset method, an inkjet method, a microcontact printing method, and the like, and one or more of these can be used in combination.

As the first liquid material supply method, it is preferable to use a spin coating method that allows easy control of the drying time. As the second liquid material supply method, the first semiconductor material previously supplied is used. It is preferable to use an ink jet method that does not easily affect the ink.
Further, after supplying the first liquid material and the second liquid material, they may be dried as necessary.
In addition, the first liquid material and the second liquid material may be repeatedly supplied a plurality of times.

In the present embodiment, as a combination of the first semiconductor material and the second semiconductor material, the case where both use an organic polymer has been described as a representative. However, for example, the former is an inorganic material. And the combination in which the latter is an organic polymer and the combination in which both the former and the latter are inorganic materials.
Note that, when an inorganic material is used for both the first semiconductor material and the second semiconductor material, it is preferable to use the same type.
Further, after the second liquid material containing the second semiconductor material is supplied, the third liquid material containing the third semiconductor material may be further supplied.

[4] Next, the anode 6 is formed on the hole transport layer 5 (fourth step).
The anode 6 can be formed by using, for example, a vapor deposition method, a sputtering method, a printing method, or the like.
[5] Next, the end of the external circuit 10 is connected to the cathode 3 and the anode 6, respectively.
The solar cell (photoelectric conversion element of the present invention) 1 according to the first embodiment is manufactured through the steps as described above.
Prior to the formation of the target layer, a bank that defines the shape of the layer may be formed as described in the second embodiment.

Second Embodiment
Next, 2nd Embodiment at the time of applying the photoelectric conversion element of this invention to a solar cell is described.
FIG. 4 is a longitudinal sectional view showing a second embodiment when the photoelectric conversion element of the present invention is applied to a solar cell, and FIG. 5 shows a cross section near the central portion in the thickness direction of the solar cell shown in FIG. It is an enlarged view. In the following description, for convenience of explanation, the upper side is “up” and the lower side is “lower” in FIGS. 4 and 5.
A solar cell 1 ′ shown in FIG. 4 includes an anode 3 ′, a hole transport layer (first carrier transport layer) 4 ′, a dye layer D ′, and an electron transport layer (second layer) on a substrate 2 ′. A carrier transport layer) 5 ′ and a cathode 6 ′ are laminated in this order.
Hereinafter, the configuration of each unit will be described.

The substrate 2 ′ is for supporting the anode 3 ′, the hole transport layer 4 ′, the dye layer D ′, the electron transport layer 5 ′, and the cathode 6 ′, and is composed of a plate-shaped member. ing.
In the solar cell 1 ′ of the present embodiment, as shown in FIG. 4, for example, light such as sunlight (hereinafter simply referred to as “light”) is incident (irradiated) from the cathode 6 ′ side. It is what you use. For this reason, the substrate 2 ′ and the anode 3 ′ are not particularly required to be transparent.

  Examples of the substrate 2 ′ include resin materials such as polyethylene terephthalate, polyethylene naphthalate, polypropylene, cycloolefin polymer, polyamide, polyether sulfone, polymethyl methacrylate, polycarbonate, polyarylate, quartz glass, and soda glass. A transparent substrate made of a transparent glass material, a substrate made of a ceramic material such as alumina, an oxide film (insulating film) formed on the surface of a metal substrate such as stainless steel, or an opaque resin material An opaque substrate such as a constructed substrate can be used.

The average thickness of the substrate 2 ′ is appropriately set depending on the constituent material, the use of the solar cell 1 ′, and the like, and is not particularly limited. For example, it can be set as follows.
When the substrate 2 ′ is made of a hard material, the average thickness is preferably about 0.1 to 1.5 mm, and more preferably about 0.8 to 1.2 mm. Further, when the substrate 2 ′ is made of a flexible material, the average thickness is preferably about 0.5 to 150 μm, and more preferably about 10 to 75 μm.
The substrate 2 ′ can be omitted if necessary.

An anode 3 'is provided on the substrate 2'.
Examples of the constituent material of the anode 3 ′ include, for example, metals such as aluminum, nickel, cobalt, platinum, silver, gold, copper, molybdenum, titanium, and tantalum, alloys containing them, and various materials such as graphite. A carbon material etc. are mentioned, Among these, it can use combining 1 type (s) or 2 or more types.

The average thickness of the anode 3 ′ is appropriately set depending on the constituent material, the use of the solar cell 1 ′, and the like, and is not particularly limited.
A hole transport layer 4 ′ is provided on the anode 3 ′.
The hole transport layer 4 ′ has a function of capturing and transporting at least holes generated in the dye layer D ′.

  As a constituent material of the hole transport layer 4 ′, various p-type semiconductor materials are used. For example, polyarylamine, fluorene-arylamine copolymer, fluorene-bithiophene copolymer, poly (N-vinylcarbazole), Organic polymers such as polyvinylpyrene, polyvinylanthracene, polythiophene, polyalkylthiophene, polyhexylthiophene, poly (p-phenylene vinylene), polytinylene vinylene, pyrene formaldehyde resin, ethylcarbazole formaldehyde resin or derivatives thereof, and thiophene Organic polymers such as dendrimers in the skeleton, naphthalene, anthracene, tetracene, pentacene, hexacene, phthalocyanine, perylene, hydrazone, triphenylmethane, diphenylmethane, stilbene, Inorganic materials such as organic low molecules such as reel vinyl, pyrazoline, triphenylamine, triarylamine, oligothiophene, phthalocyanine or derivatives thereof, CuI, AgI, AgBr, CuSCN, etc. Two or more kinds can be used in combination.

Moreover, the said organic polymer can also be used as a mixture with another polymer. As an example, the polythiophene-containing mixture includes poly (3,4-ethylenedioxythiophene / styrene sulfonic acid) (PEDOT / PSS).
Among these, the hole transport layer 4 ′ is preferably composed of an organic polymer as a main material. Organic polymers are preferred because of their excellent hole transport capability. In addition, since the organic polymer is relatively excellent in chemical resistance (solvent resistance), as described later, when the dye layer D ′ is formed by a liquid phase film forming method, the preparation of the dye layer forming material is performed. The range of selection of the liquid agent (solvent or dispersion medium) to be used in the process is expanded. In addition, when the range of selection of the liquid agent is increased, the range of selection of the dye used for the dye layer D ′ is also increased.

  The organic polymer preferably has a weight average molecular weight of 8000 or more, more preferably about 10,000 to 15,000. Thus, the said effect can be improved more by using a thing with a comparatively large weight average molecular weight. In addition, when the weight average molecular weight is larger than the upper limit, depending on the type of organic polymer, the type of solvent capable of dissolving it may be extremely reduced.

  Examples of such organic polymers include those having an arylamine skeleton such as polyarylamine, those having a fluorene skeleton such as a fluorene-bithiophene copolymer, and fluorene-arylamine copolymers. Those having both an arylamine skeleton and a fluorene skeleton are preferred. These organic polymers are particularly preferable because they have excellent hole transport capability and excellent chemical resistance.

The average thickness of the hole transport layer 4 ′ is not particularly limited, but is preferably about 0.1 to 100 μm, and more preferably about 1 to 30 μm.
A dye layer D ′ is provided in contact with the hole transport layer 4 ′.
The dye layer D ′ is a light receiving layer (photosensitive layer) that generates electrons and holes by receiving light.
As shown in FIG. 4, the dye layer D ′ and the hole transport layer 4 ′ have a macroscopically substantially parallel interface with the anode 3 ′, and as shown in FIG. Microscopically, it is preferable that the interface is in a state of entering (overlapping) each other into an uneven shape.
As a result, the contact area between the dye layer D ′ and the hole transport layer 4 ′ increases, and holes generated in the dye layer D ′ can be efficiently transferred to the hole transport layer 4 ′.
As the pigment constituting the pigment layer D ′, pigments and dyes can be used alone or in combination.

  Here, examples of the pigment include phthalocyanine pigments such as phthalocyanine green and phthalocyanine blue, fast yellow, disazo yellow, condensed azo yellow, benzoimidazolone yellow, dinitroaniline orange, benzimidazolone orange, toluidine red, and permanent carmine. Azo pigments such as permanent red, naphthol red, condensed azo red, benzimidazolone carmine, benzimidazolone brown, anthraquinone pigments such as anthrapyrimidine yellow and anthraquinonyl red, azomethine pigments such as copper azomethine yellow, quinophthalone yellow Quinophthalone pigments such as isoindoline yellow, nitroso pigments such as nickel dioxime yellow, perinone Perinone pigments such as orange, quinacridone magenta, quinacridone maroon, quinacridone scarlet, quinacridone pigments such as quinacridone red, perylene pigments such as perylene red and perylene maroon, pyrrolopyrrole pigments such as diketopyrrolopyrrole red, dioxazine violet Organic pigments such as dioxazine pigments such as carbon black, lamp black, furnace black, ivory black, carbon pigments such as graphite and fullerene, chromate pigments such as chrome lead and molybdate orange, cadmium yellow, cadmium lith Pong yellow, cadmium orange, cadmium lithopone orange, silver vermilion, cadmium red, cadmium lithopon red, sulfide pigments such as sulfide, ocher, titanium yellow, titanium barium Neckel yellow, red rose, red lead, amber, brown iron oxide, zinc iron chrome brown, chromium oxide, cobalt green, cobalt chrome green, titanium cobalt green, cobalt blue, cerulean blue, cobalt aluminum chrome blue, iron black, manganese ferrite black, Oxide pigments such as cobalt ferrite black, copper chrome black, copper chrome manganese black, hydroxide pigments such as viridian, ferrocyanide pigments such as bitumen, silicate pigments such as ultramarine, cobalt violet, minerals Examples thereof include phosphate pigments such as violet, and other inorganic pigments such as cadmium sulfide and cadmium selenide, and one or more of these can be used in combination.

On the other hand, as the dye, for _{example, RuL 2 (SCN) 2,} RuL ( manufactured by Solaronics, _{Inc.) 2 Cl 2, RuL 2 CN} 2, Rutenium535-bisTBA, [RuL 2 metal complexes such as _{(NCS 2) 2 H 2} O Examples include dyes, cyan dyes, xanthene dyes, azo dyes, hibiscus dyes, blackberry dyes, raspberry dyes, pomegranate juice dyes, chlorophyll dyes, and the like. Use one or more of these in combination. Can do. In addition, L in the said composition formula shows 2,2'-bipyridine, or its derivative (s).

The average thickness of the dye layer D ′ is not particularly limited, but is preferably about 1 to 100 nm, and more preferably about 20 to 50 nm.
An electron transport layer 5 ′ is provided in contact with such a dye layer D ′.
The electron transport layer 5 ′ has a function of capturing and transporting electrons generated in the dye layer D ′.
As a constituent material of the electron transport layer 5 ′, various n-type inorganic semiconductor materials and various n-type organic semiconductor materials can be used singly or in combination of two or more.

Examples of the n-type inorganic semiconductor material include titanium oxide (TiO ₂ ), zirconium oxide (ZrO ₂ ), zinc oxide (ZnO), aluminum oxide (Al ₂ O ₃ ), tin oxide (SnO ₂ ), ScVO ₄ , and YVO. _{4, LaVO 4, NdVO 4,} EuVO 4, GdVO 4, ScNbO 4, ScTaO 4, YNbO 4, YTaO 4, ScPO 4, ScAsO 4, ScSbO 4, ScBiO 4, YPO 4, YSbO 4, BVO 4, AlVO 4, Metal oxides such as GaVO ₄ , InVO ₄ , TlVO ₄ , InNbO ₄ , InTaO ₄ , metal sulfides such as ZnS and CdS, metal selenides such as CdSe, metals or semiconductor carbides such as TiC and SiC, Examples thereof include semiconductor nitrides such as BN and B ₄ N.

Examples of the n-type organic semiconductor material include 1,3,5-tris [(3-phenyl-6-tri-fluoromethyl) quinoxalin-2-yl] benzene (TPQ1), 1,3,5-tris. [{3- (4-t-butylphenyl) -6-trisfluoromethyl} quinoxalin-2-yl] benzene compounds such as benzene (TPQ2), metals such as phthalocyanine, copper phthalocyanine (CuPc), iron phthalocyanine Or a low molecular weight compound such as a metal-free phthalocyanine compound, tris (8-hydroxyquinolinolate) aluminum (Alq ₃ ), a high molecular weight compound such as an oxadiazole polymer or a triazole polymer. And the like.

Since titanium oxide is particularly sensitive to light, electrons can be generated in the electron transport layer 5 ′ itself by configuring the electron transport layer 5 ′ as a main material. As a result, the power generation efficiency (photoelectric conversion efficiency) of the solar cell 1 ′ can be further improved.
Moreover, the average thickness of the electron transport layer 5 ′ is not particularly limited, but is preferably about 1 to 50 μm, and more preferably about 5 to 30 μm.
On the electron transport layer 5 ′, a cathode 6 ′ facing the anode 3 ′ is provided.

Examples of the constituent material of the cathode 6 ′ include indium tin oxide (ITO), metal oxide materials such as tin oxide containing fluorine atoms (FTO), indium oxide (IO), and tin oxide (SnO ₂ ). Examples thereof include metal materials such as aluminum, nickel, cobalt, platinum, silver, gold, copper, molybdenum, titanium, tantalum or alloys containing these, carbon materials such as graphite, and one or two of them. The above can be used in combination (for example, as a multi-layer laminate).

The average thickness of the cathode 6 ′ is appropriately set depending on its constituent materials, the use of the solar cell 1 ′, and the like, and is not particularly limited. For example, it can be set as follows.
When the cathode 6 ′ is made of a metal oxide material (transparent conductive metal oxide material), the average thickness is preferably about 0.05 to 5 μm, preferably about 0.1 to 1.5 μm. Is more preferable. When the cathode 6 ′ is made of a metal material or a carbon material, the average thickness is preferably about 0.01 to 1 μm, and more preferably about 0.03 to 0.1 μm.

In addition, cathode 6 'is not limited to the shape of illustration, For example, the thing of the shape which has several comb teeth etc. may be sufficient. In this case, since the light passes between the plurality of comb teeth and reaches the dye layer D ′, the cathode 6 ′ may not be substantially transparent. Thereby, the range of selection of the constituent material, the forming method (manufacturing method), and the like of the cathode 6 ′ can be expanded.
The cathode 6 ′ can also be used by combining (for example, laminating) such a comb-like electrode and a layered electrode.

In such a solar cell 1 ′, when light is incident, electrons are excited mainly in the dye layer D ′, and electrons (e ⁻ ) and holes (h ⁺ ) are generated. Among these, electrons move to the electron transport layer 5 ′, holes move to the hole transport layer 4 ′, and a potential difference (photoelectromotive force) is generated between the anode 3 ′ and the cathode 6 ′, and the external A current (photoexcitation current) flows through the circuit 10.
Such a solar cell 1 ′ can be manufactured, for example, as follows.
Hereinafter, the manufacturing method of solar cell 1 'to which the manufacturing method of the photoelectric conversion element of this invention is applied is demonstrated.

In this embodiment, the anode 3 ′, the hole transport layer 4 ′, the dye layer D ′, the electron transport layer 5 ′, and the cathode 6 ′ are stacked in this order.
Here, contrary to the present embodiment, when manufacturing the solar cell by laminating in order from the electron transport layer,
That is, after forming the electron transport layer, when further forming a dye layer, a hole transport layer, and an anode, the constituent materials of the electron transport layer include the film formation conditions of the dye layer, the hole transport layer, and the anode. Choose a material that can withstand.

In such a solar cell, a chemically stable inorganic semiconductor material is actually selected as a constituent material of an available electron transport layer.
On the other hand, in this embodiment, if the cathode 6 ′ is formed after forming the electron transport layer 5 ′, the solar cell 1 ′ is completed.
Therefore, when selecting the constituent material of the electron transport layer 5 ′, it is only necessary to consider the film forming conditions of the cathode 6 ′, or when the cathode 6 ′ is provided by bonding of a sheet material or the like, the cathode 6 ′. There is an advantage that it is not necessary to consider the film forming conditions.

For this reason, according to the present embodiment, the range of selection of the constituent material of the electron transport layer 5 ′ is widened, and the solar cell 1 ′ having excellent power generation efficiency is obtained by appropriately selecting and combining the dyes. be able to.
FIG. 6 is a view (longitudinal sectional view) for explaining a manufacturing process of the solar cell shown in FIG. In the following, for convenience of explanation, in FIG. 6, the upper side is described as “upper” and the lower side is described as “lower”.

[1] First, a substrate 2 ′ is prepared, and an anode 3 ′ is formed on the substrate 2 ′ as shown in FIG. 6 (a).
The anode 3 ′ is, for example, a chemical vapor deposition method (CVD) such as plasma CVD, thermal CVD, or laser CVD, a dry plating method such as vacuum deposition, sputtering, or ion plating, or a vapor deposition method such as a thermal spraying method, It can be formed using a wet plating method such as electrolytic plating, immersion plating, and electroless plating, a liquid phase film forming method such as a sol-gel method or a MOD method, and joining of sheet materials.

[2] Next, as shown in FIG. 6B, a bank 7 ′ is formed on the anode 3 ′ so as to surround a region where the hole transport layer 4 ′ is formed.
In this embodiment, since the hole transport layer 4 ′ and the dye layer D ′ are formed by the liquid phase film forming method, the height of the bank 7 ′ is the total thickness of the hole transport layer 4 ′ and the dye layer D ′. Is set to be approximately equal to or slightly larger than the above.

By providing this bank 7 ′, the shape of the layer to be formed can be accurately defined, and the hole transport layer 4 ′ and the dye layer D ′ can be formed with high dimensional accuracy.
The bank 7 ′ can be obtained, for example, by supplying (applying) a resist material onto the anode 3 ′, and then patterning by exposure and development.
The resist material to be used may be either a negative type in which the light irradiation portion is cured or a positive type in which the light irradiation portion is dissolved.

Negative resist materials include, for example, polyvinyl cinnamate, polyvinyl azidobenzazyl, acrylamide, polyimide, and novolak resin as the main component (for example, chemical amplification such as novolak resin containing an acid generator and a crosslinking agent). On the other hand, examples of the positive type resist material include o-quinonediazide novolac resin and polyimide.
Moreover, as light to irradiate, an ultraviolet-ray (g ray, i ray), an electron beam etc. are mentioned, for example.

The resist material supply method is not particularly limited. For example, spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, spray coating. Various coating methods such as a printing method, a screen printing method, a flexographic printing method, an offset printing method, and an ink jet printing method can be used.
The developing step can be omitted by selectively supplying a negative resist material onto the anode 3 ′ so as to have a shape corresponding to the bank 7 ′ to be formed by various printing methods. .

[3] Next, as shown in FIG. 6C, the hole transport layer 4 ′ is formed by the liquid phase film formation method in the region inside the bank 7 ′ on the anode 3 ′ (first step). .
According to the liquid phase film formation method, the hole transport layer 4 ′ can be formed easily and inexpensively without requiring large-scale equipment.
First, a liquid material (solution or dispersion) containing the p-type semiconductor material as described above is prepared.

  Examples of the solvent or dispersion medium used for preparing the liquid material include inorganic solvents such as nitric acid, sulfuric acid, ammonia, hydrogen peroxide, water, carbon disulfide, carbon tetrachloride, and ethylene carbonate, methyl ethyl ketone (MEK), and acetone. , Diethyl ketone, methyl isobutyl ketone (MIBK), methyl isopropyl ketone (MIPK), ketone solvents such as cyclohexanone, alcohol solvents such as methanol, ethanol, isopropanol, ethylene glycol, diethylene glycol (DEG), glycerin, diethyl ether, diisopropyl Ether, 1,2-dimethoxyethane (DME), 1,4-dioxane, tetrahydrofuran (THF), tetrahydropyran (THP), anisole, diethylene glycol dimethyl ether (diglyme) , Ether solvents such as diethylene glycol ethyl ether (carbitol), cellosolv solvents such as methyl cellosolve, ethyl cellosolve, phenyl cellosolve, aliphatic hydrocarbon solvents such as hexane, pentane, heptane, cyclohexane, toluene, xylene, benzene, etc. Aromatic hydrocarbon solvents, aromatic heterocyclic compounds such as pyridine, pyrazine, furan, pyrrole, thiophene, methylpyrrolidone, N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMA), etc. Amide solvents, halogenated solvents such as chlorobenzene, dichloromethane, chloroform, 1,2-dichloroethane, ester solvents such as ethyl acetate, methyl acetate, ethyl formate, sulfur such as dimethyl sulfoxide (DMSO), sulfolane Compound solvents, various organic solvents such as nitrile solvents such as acetonitrile, propionitrile, acrylonitrile, organic acid solvents such as formic acid, acetic acid, trichloroacetic acid, trifluoroacetic acid, or mixed solvents containing these. Can be mentioned.

In the case of using an organic polymer as the p-type semiconductor material, among these, a nonpolar solvent is preferable, for example, an aromatic hydrocarbon solvent such as xylene, toluene, cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene and the like. , Aromatic heterocyclic compounds such as pyridine, pyrazine, furan, pyrrole, thiophene, and methylpyrrolidone, and aliphatic hydrocarbon solvents such as hexane, pentane, heptane, and cyclohexane. These may be used alone or in combination. Can be used.
Next, this liquid material is supplied onto the anode 3 'to form a liquid film.

As the liquid material supply method (liquid phase film forming method), it is particularly preferable to use the ink jet printing method (droplet discharge method) among the application methods as described above. By using the inkjet printing method, the liquid film can be formed with high dimensional accuracy without wasting the liquid material.
Next, the solvent or the dispersion medium is removed from the liquid film. Thereby, hole transport layer 4 'is obtained.
Examples of the method for removing the solvent or the dispersion medium include standing under atmospheric pressure or reduced pressure, heating, blowing an inert gas, and the like.
The hole transport layer 4 ′ may be formed using the first liquid material and the second liquid material as described in the first embodiment.

[4] Next, as shown in FIG. 6D, a dye layer D ′ is formed on the hole transport layer 4 ′ by a liquid film forming method (second step).
According to the liquid phase film forming method, the dye layer D ′ can be formed easily and inexpensively without requiring large-scale equipment.
This dye layer D ′ can also be formed in the same manner as the hole transport layer 4 ′.
That is, it is preferable to use an ink jet printing method (droplet discharge method) as a liquid phase film forming method for forming the dye layer D ′. By using the inkjet printing method, the liquid film can be formed with high dimensional accuracy without wasting the liquid material.

In this case, for preparing the liquid material for forming the dye layer, it is preferable to use a solvent or a dispersion medium (liquid agent) that can swell the hole transport layer 4 ′. As a result, as described above, the interface between the dye layer D ′ and the hole transport layer 4 ′ can be microscopically intruded (see FIG. 5). The contact area can be increased. For this reason, the transfer of holes from the dye layer D ′ to the hole transport layer 4 ′ is performed more smoothly, and the power generation efficiency of the solar cell 1 ′ can be further improved.
The bank 7 ′ may be temporarily removed after the step [3], and a new one may be formed again.

[5] Next, as shown in FIG. 6E, an electron transport layer 5 ′ is formed on the dye layer D ′ (third step).
The electron transport layer 5 ′ can be formed in the same manner as the anode 3 ′.
[6] Next, as shown in FIG. 6 (f), a cathode 6 ′ is formed on the electron transport layer 5 ′.
The cathode 6 ′ can also be formed in the same manner as the anode 3 ′.
When the electron transport layer 5 ′ and / or the cathode 6 ′ are formed using the liquid phase film forming method, the height of the bank 7 ′ to be formed may be set accordingly.
Further, the bank 7 ′ may be left as it is without being removed in the finished product of the solar cell 1 ′, or may be removed.

[7] Next, end portions of the external circuit 10 are connected to the anode 3 ′ and the cathode 6 ′, respectively.
Through the steps as described above, the solar cell (photoelectric conversion element of the present invention) 1 ′ of the second embodiment is manufactured.
In the present embodiment, the case where the hole transport layer 4 ′ and the dye layer D ′ are formed by the liquid phase film forming method has been described. However, in the present invention, either or both of these are formed by the liquid phase formation. You may make it form by methods other than a film method, for example, a vapor-phase film-forming method.

The electronic device of the present invention includes such a solar cell 1 (or 1 ′).
Hereinafter, the electronic apparatus of the present invention will be described with reference to FIGS.
FIG. 7 is a plan view showing a calculator to which the electronic device of the present invention is applied, and FIG. 8 is a perspective view showing a mobile phone (including PHS) to which the electronic device of the present invention is applied.
A calculator 100 illustrated in FIG. 7 includes a main body 101, a display unit 102 provided on the upper surface (front surface) of the main body 101, a plurality of operation buttons 103, and a solar cell installation unit 104.
In the configuration shown in FIG. 7, five solar cells 1 (or 1 ′) are connected in series to the solar cell installation unit 104.

A mobile phone 200 shown in FIG. 8 includes a main body 201, a display unit 202 provided on the front surface of the main body 201, a plurality of operation buttons 203, an earpiece 204, a mouthpiece 205, and a solar cell installation unit 206. ing.
In the configuration shown in FIG. 8, a plurality of solar cells 1 (or 1 ′) are connected in series so that the solar cell installation unit 206 surrounds the periphery of the display unit 202.

As mentioned above, although the manufacturing method of the photoelectric conversion element of this invention, the photoelectric conversion element, and the electronic device were demonstrated based on each embodiment of illustration, this invention is not limited to these.
For example, each part which comprises a photoelectric conversion element and an electronic device can be substituted with the thing of the arbitrary structures which can exhibit the same function.
Further, for example, in the method for manufacturing a photoelectric conversion element of the present invention, any two or more configurations of the first and second embodiments may be combined.
The photoelectric conversion element of the present invention can be applied not only to solar cells but also to various elements (light receiving elements) that receive light and convert it into electrical energy, such as optical sensors and optical switches. It is.
Moreover, in the photoelectric conversion element of this invention, the incident direction of light may be from the reverse direction unlike the thing of illustration. That is, the incident direction of light is arbitrary.

Next, specific examples of the present invention will be described.
1. Production of solar cell (photoelectric conversion element) (Example 1)
The solar cell shown in FIG. 1 was manufactured as follows.
-1- First, a soda glass substrate having dimensions of 30 mm in length, 35 mm in width, and 1.0 mm in thickness was prepared.
Then, this soda glass substrate was cleaned by immersing it in a cleaning solution (mixed solution of sulfuric acid and hydrogen peroxide solution) at 85 ° C. to clean the surface.

-2- Next, an FTO electrode (cathode: first electrode) having dimensions: 30 mm long × 35 mm wide × 1 μm thick was formed on a soda glass substrate by vapor deposition.
-3- Next, a barrier layer was formed on the FTO electrode in an area of 30 mm length x 30 mm width. This was done as follows.
First, titanium tetraisopropoxide was dissolved in 2-n-butoxyethanol so as to be 0.5 mol / L. To this solution was then added diethanolamine. Thereby, a barrier layer forming material was obtained.

The mixing ratio of diethanolamine and titanium tetraisopropoxide was 2: 1 (molar ratio). Moreover, the viscosity of the obtained material for forming a barrier layer was 3 cP (normal temperature).
This barrier layer forming material was applied by spin coating to obtain a coating film. This spin coating was performed at a rotation speed of 1500 rpm.

Next, this was placed on a hot plate and heat-treated at 160 ° C. for 10 minutes to dry the coating film. Furthermore, the organic component which remain | survives in a coating film was removed by heat-processing in oven for 480 degreeC for 30 minutes.
This drying and removal of the organic component were taken as one cycle and repeated 10 cycles.
Thereby, a barrier layer having a porosity of less than 1% was obtained. The average thickness of this barrier layer was 0.9 μm.

-4- Next, an electron transport layer having a shape almost the same as that of the barrier layer in plan view was formed on the barrier layer. This was done as follows.
First, rutile type titanium dioxide powder and anatase type titanium dioxide powder were mixed to prepare titanium dioxide powder.
The average particle size of the titanium dioxide powder was 40 nm, and the blending ratio of the rutile type titanium dioxide powder and the anatase type titanium dioxide powder was 60:40 (weight ratio).

Further, titanium tetraisopropoxide was dissolved in 2-propanol so as to be 1 mol / L. Next, acetic acid and distilled water were mixed into this solution.
The mixing ratio of acetic acid and titanium tetraisopropoxide is 1: 1 (molar ratio), and the mixing ratio of distilled water and titanium tetraisopropoxide is 1: 1 (molar ratio). It was made to become.

Next, a predetermined amount of titanium dioxide powder prepared in advance was mixed with this solution. Further, this suspension was diluted 2-fold with 2-propanol. Thereby, an electron transport layer forming material was prepared.
Then, the soda glass substrate on which the FTO electrode and the barrier layer were formed was placed on a hot plate heated to 140 ° C., and the electron transport layer forming material was dropped on the barrier layer and dried. This operation was repeated for 7 cycles, with 1 cycle.
Thereby, an electron transport layer having a porosity of 34% was obtained. The average thickness of this electron transport layer was 7.2 μm.
The resistance value in the thickness direction of the entire barrier layer and electron transport layer was 1 kΩ / cm ₂ or more.

  -5- Next, the laminated body of the soda glass substrate, the FTO electrode, the barrier layer, and the electron transport layer is immersed in a saturated ethanol solution of ruthenium trisbipidyl (pigment), then taken out from the ethanol solution, and then naturally dried. The ethanol was volatilized. Further, after drying in a clean oven at 80 ° C. for 0.5 hour, the mixture was left overnight. As a result, a dye layer was formed along the outer surface of the electron transport layer and the inner surface of the pores.

-6 Next, a hole transport layer having substantially the same shape as that of the electron transport layer in plan view was formed so as to be in contact with the dye layer. This was done as follows.
First, polyphenylamine (weight average molecular weight: 2000) as a first semiconductor material was dissolved in toluene so as to be 1% by weight to prepare a first liquid material. Further, a second liquid material was prepared by dissolving polyphenylamine (weight average molecular weight: 20000) as a second semiconductor material in xylene so as to be 1% by weight.

The viscosity of the first liquid material was 2 cP (room temperature), and the viscosity of the second liquid material was 7 cP (room temperature). In addition, the first liquid material had a viscosity increase rate associated with an increase in the polyphenylamine concentration lower than the viscosity increase rate associated with an increase in the polyphenylamine concentration of the second liquid material.
First, while applying ultrasonic vibration to the electron transport layer, from the side opposite to the FTO electrode of the electron transport layer, the first liquid material is spin-coated (1000 rpm × 30 seconds) to form holes in the electron transport layer. Supplied to fill and dried. Next, the second liquid material was supplied by an inkjet method and dried.
In addition, the average thickness of the obtained hole transport layer (excluding the part entering the vacancies in the electron transport layer) was 20 μm.
−7− Next, a platinum electrode (anode: second electrode) having dimensions: 30 mm long × 30 mm wide × 0.1 mm thick was formed on the hole transport layer by vapor deposition.
-8- Next, the end part of the external circuit was connected to the FTO electrode and the platinum electrode, respectively, thereby completing the solar cell.

(Example 2)
A solar cell was manufactured in the same manner as in Example 1 except that the second liquid material was not used.
(Example 3)
A solar cell was manufactured in the same manner as in Example 1 except that the first liquid material was not used.

2. Evaluation Each of the solar cells obtained in each Example was irradiated with artificial sunlight under the condition: AM1.5 to obtain photoelectric conversion efficiency.
As a result, when the photoelectric conversion efficiency in the solar cell of Example 2 is “1”, the power generation efficiency of the solar cell of Example 1 is about twice, and the power generation efficiency of the solar cell of Example 3 is about 0.2. It was 7 times.

  Note that, as the first semiconductor material and the second semiconductor material, a fluorene-arylamine copolymer, a fluorene-bithiophene copolymer, or a derivative thereof is used instead of polyphenylamine (polyarylamine), respectively. When a solar cell is manufactured in the same manner as in the above examples and evaluated in the same manner as described above, the same result as described above is obtained.

  DESCRIPTION OF SYMBOLS 1 ... Solar cell 2 ... Substrate 3 ... Cathode (first electrode) 4 ... Electron transport layer 41 ... Hole 5 ... Hole transport layer 6 ... Anode (second electrode) 8 ... Barrier layer 10 …… External circuit D …… Dye layer 1 ′ …… Solar cell 2 ′ …… Substrate 3 ′ …… Anode 4 ′ …… Hole transport layer D ′ …… Dye layer 5 ′ …… Electron transport layer 6 '…… Cathode 7' …… Bank 100 …… Calculator 101 …… Main unit 102 …… Display unit 103 …… Operation buttons 104 …… Solar cell installation unit 200 …… Mobile phone 201 …… Main unit 202… Display unit 203 …… Operation buttons 204 …… Earpiece 205 …… Speaker 206 …… Solar cell installation section

Claims (25)

A method for producing a photoelectric conversion element formed by interposing a first carrier transport layer, a dye layer, and a second carrier transport layer between an anode and a cathode,
A first step of forming the first carrier transport layer;
A second step of forming the dye layer so as to contact the first carrier transport layer;
A third step of forming the second carrier transport layer so as to contact the dye layer,
At least one of the first carrier transport layer and the second carrier transport layer is formed by a liquid phase film-forming method. The first carrier transport layer is a porous electron transport layer, the second carrier transport layer is a hole transport layer,
The method for producing a photoelectric conversion element according to claim 1, wherein in the third step, the hole transport layer is formed by a liquid phase film formation method. In the third step, the first liquid material containing the first semiconductor material is supplied to the hole transport layer from the side opposite to the cathode of the electron transport layer, and then the second semiconductor material is added. When supplying and forming the second liquid material containing,
The method for producing a photoelectric conversion element according to claim 2, wherein a material having a lower viscosity at room temperature than the second liquid material is used as the first liquid material.   The method for manufacturing a photoelectric conversion element according to claim 3, wherein in the third step, the first semiconductor material is filled so as to fill holes in the electron transport layer.   The method for producing a photoelectric conversion element according to claim 3 or 4, wherein the viscosity of the first liquid material at room temperature is 1 to 5 cP.   6. The photoelectric conversion according to claim 3, wherein in the third step, the first liquid material is supplied while vibration is applied to the electron transport layer and / or the first liquid material. Device manufacturing method.   The method for producing a photoelectric conversion element according to claim 6, wherein the vibration is applied using ultrasonic waves.   The first liquid material has a viscosity increase rate associated with an increase in the concentration of the first semiconductor material lower than a viscosity increase rate associated with an increase in the concentration of the second semiconductor material of the second liquid material. The manufacturing method of the photoelectric conversion element in any one of Claim 3 thru | or 7.   The method for manufacturing a photoelectric conversion element according to claim 3, wherein each of the first semiconductor material and the second semiconductor material is an organic polymer.   The first semiconductor material and the second semiconductor material are organic polymers of the same kind, and the weight average molecular weight of the first semiconductor material is smaller than the weight average molecular weight of the second semiconductor material. The manufacturing method of the photoelectric conversion element of description.   The method for manufacturing a photoelectric conversion element according to claim 10, wherein the first semiconductor material has a weight average molecular weight of 10,000 or less.   The method of manufacturing a photoelectric conversion element according to claim 10 or 11, wherein the second semiconductor material has a weight average molecular weight of 15000 or more.   The method for producing a photoelectric conversion device according to claim 10, wherein the organic polymer is a polyarylamine, a fluorene-arylamine copolymer, a fluorene-bithiophene copolymer, or a derivative thereof.   The method for manufacturing a photoelectric conversion element according to claim 3, wherein the first semiconductor material and the second semiconductor material are of the same type. The first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer,
The method for producing a photoelectric conversion element according to claim 1, wherein in the first step, the hole transport layer is formed by a liquid phase film forming method.   The method for producing a photoelectric conversion element according to claim 15, wherein the hole transport layer is composed of an organic polymer as a main material.   The method for producing a photoelectric conversion element according to claim 16, wherein the organic polymer has a weight average molecular weight of 8000 or more.   The method for producing a photoelectric conversion element according to claim 16 or 17, wherein the organic polymer has an arylamine skeleton and / or a fluorene skeleton.   19. The method according to claim 15, wherein in the second step, the dye layer is formed by a liquid phase film forming method, and a liquid agent capable of swelling the hole transport layer is used for preparing a liquid material for forming the dye layer. The manufacturing method of the photoelectric conversion element of crab.   The method for manufacturing a photoelectric conversion element according to claim 2, wherein a droplet discharge method is used as a liquid phase film forming method for forming the hole transport layer.   21. The method of manufacturing a photoelectric conversion element according to claim 1, wherein in the second step, the dye layer is formed by a liquid phase film forming method.   The method for producing a photoelectric conversion element according to claim 21, wherein a droplet discharge method is used as a liquid phase film forming method for forming the dye layer.   The method for manufacturing a photoelectric conversion element according to claim 1, further comprising a step of forming a bank that defines a shape of the layer prior to forming the target layer.   A photoelectric conversion element manufactured by the method for manufacturing a photoelectric conversion element according to claim 1.   An electronic apparatus comprising the photoelectric conversion element according to claim 24.

Images