KR101862920B1 - Compound of perovskite structure, solar cell and thin film transister using the same - Google Patents

Abstract

The present invention discloses a compound having a perovskite structure and a method for producing the same. The perovskite-structured compound according to an embodiment of the present invention is characterized by combining with a polymer, particularly, polystyrene (PS) to improve photoelectric conversion efficiency.

Description

TECHNICAL FIELD [0001] The present invention relates to a compound of perovskite structure, a solar cell using the same, and a thin film transistor using the same. BACKGROUND OF THE INVENTION [0002]

Embodiments of the present invention involve mixing a polymer and a perovskite precursor solution containing a perovskite structure material to reduce the rate of evaporation of the solvent to form a perovskite structure And a device using the same.

Today, depletion of fossil raw materials, the main energy source of the industry, and environmental pollution are one of the tasks to be resolved by human beings now living, and they are endeavoring to develop renewable and environmentally friendly energy globally.

In particular, solar cells are so widely used that they account for about 25% of global green energy production and are the most efficient way to convert them into useful energy sources for human use.

Currently, np diode type silicon (Si) monocrystal based solar cells with more than 20% optical energy conversion efficiency can be fabricated and used for actual solar power generation. Compound semiconductors such as gallium arsenide (GaAs) There is also solar cell using.

However, since inorganic semiconductor-based solar cells require highly refined materials for high efficiency, a large amount of energy is consumed in the purification of raw materials, and expensive processes are required in the process of making single crystals or thin films using raw materials And the manufacturing cost of the solar cell can not be lowered, which has been a hindrance to a large-scale utilization.

As a result, silicon-based, organic dye-based, and newly perovskite-based solar cells are in the process of developing solar cells, and now, perovskite-based solar cells are emerging as the most promising photovoltaic technologies.

The CH ₃ NH ₃ PbI ₃ perovskite light absorber used as a light absorbing and activating material of the perovskite solar cell has a high possibility of developing an ultra-low-cost low-cost solar cell based on the high extinction coefficient characteristic.

However, the perovskite type optical absorber is decomposed into moisture in comparison with excellent optical properties and has low stability, which limits the commercialization of solar cells. Therefore, overcoming this stability problem becomes a very important issue.

Korean Patent Laid-Open Publication No. 2016-0020121, " Perovskite solar cell and its manufacturing method " Korean Patent Registration No. 1608281, "Light Absorbent for Solar Cell Containing Perovskite Structure Compound and Solar Cell Containing It, Dye-Sensitized Solar Cell, Organic Solar Cell and Perovskite Solar Cell" Korean Patent Registration No. 1430139, "Perovskite based mesoporous thin film solar cell manufacturing technology"

An object of embodiments of the present invention is to reduce the evaporation rate of the solvent by mixing the polymer and the perovskite precursor solution containing the perovskite structure material to form a perovskite structure compound To control the crystallization speed of the material of the perovskite structure to control the crystal size.

It is an object of embodiments of the present invention to provide a photo-active layer of a solar cell and a defect-free morphology through control of the crystal size, transfer efficiency.

It is an object of embodiments of the present invention to improve the absorbance of the photoactive layer by controlling the rate of crystallization and forming the perovskite structure compound as the photoactive layer of the solar cell.

The perovskite-structured compound according to an embodiment of the present invention includes a polymer; And a perovskite precursor solution containing a perovskite structure material are mixed and the polymer controls the crystallization size by controlling the crystallization rate of the perovskite structure material by decreasing the evaporation rate of the solvent .

The polymer may be selected from the group consisting of polystyrene (PS), polymethyl methacrylate (PMMA), polyetherimide (PEI), poly (ethyleneimine) ethoxylated (PEIE), poly (triarylamine), poly (3-hexylthiophene) poly (2-methoxy-5- (2'-ethyl-hexyloxy) -1,4-phenylene vinylene), PTB7 (polythieno [3,4-b] -thiophene-co-benzodithiophene), F8BT -dioctylfluorene-cobenzothiadiazole), PFN (Poly [9,9-bis [6- (N, N-trimethylammonium) , TFB (poly (9,9'-dioctylfluorene-co-N- (4-butylphenyl) diphenylamine), poly-TPD (poly (N, N'- phenyl benzidine), PFO (polyfluorene), PCDTBT (poly [N-9'-heptadecanyl-2,7-carbazole-5,5- (4 ', 7'- di- 2-thienyl- , 3'-benzothiadiazole)], PDPP3T (Poly [{2,5-bis (2-hexyldecyl) -2,3,5,6-tetrahydro-3,6-dioxopyrrolo [3,4- , 4-diyl} -alt- {[2,2 ': 5', 2'-terthiophene] -5,5'-diyl}], PDPPBTT (Poly {2,2 ' 3,4-c] pyrrole-1,4-diyl) thithieno [3,2-b] thiophene-5 , 5'-diyl-alt-thiophen-2,5-diyl}), PCPDTBT (poly [2,1,3-benzothiadiazole-4,7-diyl4,4-bis (2-ethylhexyl- 2,1-b: 3,4-b '] dithiophene-2,6-diyl]]), PBDTTT-C (poly [4,8-bisalkyloxybenzo [1,2- dithiophene-2,6-diyl- [alkylthieno [3,4-b] thiophene-2-carboxylate] -2,6-diyl), PBDTTT-CF (poly [ benzo (1,2-b: 4,5-b ') dithiophene-2,6-diyl-alt- (4-octanoyl-5-fluorothieno [3,4- b] thiophene- diyl]) and PBDTTT-EFT (Poly [4,8-bis (5- (2-ethylhexyl) thiophen-2-yl) benzo [1,2- b; 4,5- b '] dithiophene- diyl-4- (2-ethylhexyl) -3-fluorothieno [3,4-b] thiophene)) - 2-carboxylate-2-6-diyl)].

The polymer may range from 0.5 wt% to 10 wt%.

The material of the perovskite structure may be at least one selected from the following chemical formulas (1) to (5).

[Chemical Formula 1]

CH ₃ NH ₃ PbI ₃

(2)

CH ₃ NH ₃ PbI ₃ - _X Cl _X

(3)

CH ₃ NH ₃ PbCl ₃

[Chemical Formula 4]

CH ₃ NH ₃ PbI ₃ - _X Br _X

[Chemical Formula 5]

CH ₃ NH ₃ PbBr ₃

In Formula 2 or Formula 4, x is 0 < x < 3.

The crystal size of the material of the perovskite structure may be 350 nm to 1.1 탆.

Polymer; And a perovskite precursor solution is used as a photoactive layer. The polymer reduces the evaporation rate of the solvent to control the crystallization rate of the perovskite structure material, And a charge transfer efficiency is improved through control of the crystal size.

Polymer; And a perovskite precursor solution. The polymer reduces the evaporation rate of the solvent to control the crystallization rate of the perovskite structure to control the crystal size And a thin film transistor in which charge transfer efficiency is improved through control of the crystal size.

 Mixing a perovskite structure material and a solvent to form a perovskite precursor solution; And mixing the polymer with the perovskite precursor solution, wherein the polymer controls the crystal size by controlling the rate of crystallization of the perovskite structure material by decreasing the evaporation rate of the solvent, And a method of preparing a perovskite structure compound that improves the charge transfer efficiency.

The solvent may include at least one organic solvent selected from the group consisting of dimethylsulfoxide, acetonitrile, dimethylformamide, alcohol, cyclohexane, and toluene.

The solvent may be mixed at 5% by volume to 50% by volume.

Forming an anode on the substrate; Forming a hole transport layer on the anode; Forming a photoactive layer on the hole transport layer; Forming an electron transport layer on the photoactive layer; And forming a negative electrode on the electron transporting layer, wherein the photoactive layer uses a perovskite-structured compound in which a polymer and a perovskite precursor solution are mixed, and the polymer has an evaporation rate of the solvent To control the crystallization speed of the material of the perovskite structure to control the crystal size, and to improve the charge transfer efficiency.

According to an embodiment of the present invention, by forming a perovskite structure compound by mixing a polymer and a perovskite precursor solution containing a perovskite structure material, the polymer reduces the evaporation rate of the solvent The crystallization speed of the material of the perovskite structure can be controlled to control the crystal size.

According to an embodiment of the present invention, a perovskite structure compound is formed as a photoactive layer of a solar cell and a defect-free morphology is provided through control of crystal size, transfer efficiency can be improved.

According to an embodiment of the present invention, the perovskite structure compound can be formed as a photoactive layer of a solar cell, and the absorbance of the photoactive layer can be improved by controlling the crystallization rate.

FIG. 1 is a view for explaining a perovskite structure material and a polymer included in the perovskite structure compound of the present invention.
FIG. 2 is a flowchart illustrating a method for preparing a perovskite-structured compound according to an embodiment of the present invention.
3 is a flowchart illustrating a method of manufacturing a solar cell using a perovskite structure compound as a photoactive layer according to an embodiment of the present invention.
4 is a cross-sectional view of a solar cell including a perovskite-structured compound according to an embodiment of the present invention.
5 is an energy band diagram using a perovskite structure compound formed by mixing a solution of a polystyrene and a perovskite precursor according to an embodiment of the present invention.
FIG. 6 is a graph showing the degree of absorption according to the content of the polystyrene in the perovskite structure compound according to an embodiment of the present invention. FIG.
7a to 7d show scanning electron microscope (SEM) images at the surface of a sample according to the content of polystyrene in the perovskite structure compound according to an embodiment of the present invention.
8A-8H illustrate atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM) images according to the content of polystyrene in a perovskite-structured compound according to an embodiment of the present invention.
Figures 9a-9d illustrate atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM) images at the surface according to the polystyrene content of a perovskite structure compound according to an embodiment of the present invention .
10A and 10B are graphs showing XRD (X-ray diffraction) measurement results according to the content of polystyrene in a perovskite-structured compound thin film according to an embodiment of the present invention.
FIGS. 11A and 11B are graphs showing the current-voltage characteristics of a solar cell according to the content of a polystyrene in a perovskite structure compound according to an embodiment of the present invention. FIG.
12A to 12D are graphs showing current-voltage characteristics according to the voltage sweep direction according to the content of the polystyrene in the solar cell including the perovskite structure compound according to the embodiment of the present invention FIG.
FIG. 13 is a graph showing the external quantum efficiency (EQE) characteristics according to the content of the polystyrene in the bean cell including the perovskite structure compound as the photoactive layer according to the embodiment of the present invention.
FIG. 14 is a graph showing time-divisional photoluminescence (TRPL) characteristics of a solar cell including a perovskite structure compound as a photoactive layer according to the content of the polystyrene.
15A to 15D are graphs showing stability characteristics of a solar cell according to the content of the polystyrene in the solar cell including the perovskite structure compound as the photoactive layer according to the embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings and accompanying drawings, but the present invention is not limited to or limited by the embodiments.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

As used herein, the terms "embodiment," "example," "side," "example," and the like should be construed as advantageous or advantageous over any other aspect or design It does not.

Also, the term 'or' implies an inclusive or 'inclusive' rather than an exclusive or 'exclusive'. That is, unless expressly stated otherwise or clear from the context, the expression 'x uses a or b' means any of the natural inclusive permutations.

Also, the phrase " a " or " an ", as used in the specification and claims, unless the context clearly dictates otherwise, or to the singular form, .

The terms used in the following description are chosen to be generic and universal in the art to which they are related, but other terms may exist depending on the development and / or change in technology, customs, preferences of the technician, and the like. Accordingly, the terminology used in the following description should not be construed as limiting the technical thought, but should be understood in the exemplary language used to describe the embodiments.

Also, in certain cases, there may be a term chosen arbitrarily by the applicant, in which case the detailed description of the meaning will be given in the corresponding description section. Therefore, the term used in the following description should be understood based on the meaning of the term, not the name of a simple term, and the contents throughout the specification.

On the other hand, the terms first, second, etc. may be used to describe various elements, but the elements are not limited by terms. Terms are used only for the purpose of distinguishing one component from another.

It will also be understood that when an element such as a film, layer, region, configuration request, etc. is referred to as being "on" or "on" another element, And the like are included.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. The terminology used herein is a term used for appropriately expressing an embodiment of the present invention, which may vary depending on the user, the intent of the operator, or the practice of the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification.

FIG. 1 is a view for explaining a perovskite structure material and a polymer included in the perovskite structure compound of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 discloses a perovskite structure material and PS (polystyrene) polymer having the formula structure of ABX _{3 which} can be preferably used in embodiments of the present invention.

1, the material of the perovskite structure is a structure having an ABX ₃ chemical formula in which an organic material and an inorganic material are mixed. An organic ammonium ion (RNH ₃ ) is used as the A ion, and B As the ion, a divalent metal ion is used, and as the X ion, a halogen ion is used.

Particularly, as shown in FIG. 1, the perovskite structure material uses CH ₃ NH ₃ (Methylammonium) as the A ion, Pb (Lead ion) as the B ion, I ) to show a CH ₃ NH ₃ PbI ₃ used.

The perovskite structure material used in the present invention will be described in more detail. The perovskite structure material according to the present embodiment includes at least a perovskite structure selected from the group consisting of Formulas 1, 2, 3, 4, And may include one or more species.

[Chemical Formula 1]

CH ₃ NH ₃ PbI ₃

(2)

CH ₃ NH ₃ PbI ₃ - _X Cl _X

(3)

CH ₃ NH ₃ PbCl ₃

[Chemical Formula 4]

CH ₃ NH ₃ PbI ₃ - _X Br _X

[Chemical Formula 5]

CH ₃ NH ₃ PbBr ₃

In Formula 2 or Formula 4, x is 0 < x < 3.

For example, the material of the perovskite structure may be CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI ₃ - _X Cl _X , CH ₃ NH ₃ PbCl ₃ , CH ₃ NH ₃ PbI ₃ - _X Br _X , or CH ₃ NH ₃ PbBr _{3 A} combination of these different halide (I, Cl, Br) materials may be used, but is not limited thereto.

In an embodiment of the present invention, the polymer is mixed with the perovskite precursor solution to reduce the rate of evaporation of the solvent to control the rate of crystallization of the perovskite structure material, thereby controlling the crystal size.

That is, since the polymer has a viscosity higher than that of the perovskite precursor solution, the evaporation rate of the solvent is decreased to increase the crystal size of the perovskite structure material.

In addition, since the polymer has a viscosity higher than that of the perovskite precursor solution, when the polymer is mixed with the perovskite precursor solution, the polymer flows into the grains of the perovskite structure material So that the material of the perovskite structure is uniformly arranged and thereby the grain of the perovskite structure material is maintained without breaking.

Accordingly, the crystal size of the perovskite structure compound can be increased by the concentration of the polymer.

The crystal size of the perovskite-structured material may be 350 nm to 1.1 μm. By controlling the crystal size of the perovskite-structured material, the electron movement distance and electrical characteristics can be increased.

Also, as shown in FIG. 1, the structure of PS (polystyrene) used as the polymer material of the present invention has a polymer structure of a styrene unit produced by reacting ethylene with benzene.

The polymer according to an embodiment of the present invention may be selected from the group consisting of polystyrene (PS), polymethyl methacrylate (PMMA), polyetherimide (PEI), poly (ethyleneimine) ethoxylated PEIE, poly (triarylamine), poly (3-hexylthiophene) ), MEH-PPV (poly-2-methoxy-5- (2'-ethyl-hexyloxy) -1,4-phenylene vinylene), PTB7 (polythieno [3,4- (poly (9,9'-dioctylfluorene-cobenzothiadiazole), PFN (Poly [9,9-bis [6- (N, N-trimethylammonium) (n-vinylcarbazole)), TFB (poly (9,9'-dioctylfluorene-co-N- (4-butylphenyl) diphenylamine) , N'-bis (phenyl) benzidine), PFO (polyfluorene), PCDTBT (poly [N-9'-heptadecanyl-2,7-carbazole- 2 ', 1', 3'-benzothiadiazole)], PDPP3T (Poly [{2,5-bis (2-hexyldecyl) -2,3,5,6-tetrahydro-3,6-dioxopyrrolo [ 4-c] pyrrole-1,4-diyl} -one - {[2,2 ': 5,2'-terthiophene] -5,5'-diyl}], PDPPBTT (Poly {2,2 - (2,5-bis (2-octyldodecyl) -3,6-dioxo-2,3,5,6-tetrahydropyrrolo [3,4-c] pyrrole-1,4-d 2,5-diyl-thiophen-2,5-diyl), PCPDTBT (poly [2,1,3-benzothiadiazole-4,7-diyl [4 , 4-bis (2-ethylhexyl-4H-cyclopenta [2,1-b: 3,4-b '] dithiophene-2,6-diyl]]), PBTTT-C, PBDTTT- 8-bisalkyloxybenzo [1,2-b: 4,5-b '] dithiophene-2,6-diyl-lower alkyl thieno [3,4-b] thiophene-2-carboxylate] PBDTTT-CF (poly [4,8-bis (2-ethyl hexyloxy) benzo (1,2-b: 4,5-b ') dithiophene-2,6-diyl-6- (4-octanoyl- [3,4-b] thiophene-2-carboxylate 2,6-diyl) and PBDTTT-EFT (Poly [4,8- bis (5- (2- ethylhexyl) thiophen- 2-b 4,5-b '] dithiophene-2,6-diyl-alt- (4- (2-ethylhexyl) -3-fluorothieno [3,4- b] thiophene- 6-diyl)]).

The polymer may be any polymer material that can be combined with a material having a perovskite structure, but is not limited thereto.

In addition, the polymer may range from 0.5 wt% to 10 wt%, preferably from 0.5 wt% to 6 wt%.

2 is a flow chart for explaining a method for producing a perovskite structure compound according to an embodiment of the present invention.

Referring to FIG. 2, a method for preparing a perovskite-structured compound according to an embodiment of the present invention includes preparing a perovskite-structured material in step S110.

The material of the perovskite structure is a substance having an ABX ₃ structure, CH ₃ NH ₃ (Methylammonium) is used as the A ion, Pb (Lead ion) is used as the B ion, A perovskite structure material having a structure combining different halogen ions (Halogen ions) is prepared.

In step S120, the perovskite precursor solution is prepared by mixing the perovskite structure material with the solvent.

The material of the perovskite structure is as described above, and a description thereof will be omitted.

The solvent may include at least one organic solvent selected from the group consisting of dimethyl sulfoxide, acetonitrile, dimethylformamide, alcohol, cyclohexane, and toluene.

The solvent may be a mixture of 5% by volume to 50% by volume of gamma-butyrolactone in dimethylsulfoxide.

Next, in step S130, the polymer is mixed with the perovskite precursor solution.

The polymer is as described above, and a description thereof will be omitted.

Polystyrene is preferred as the polymer, but is not limited thereto.

The polymer may range from 0.5 wt% to 10 wt%, preferably from 0.5 wt% to 6 wt%.

Then, in step S140, a perovskite structure compound is prepared.

Through the above steps, the crystal size of the material of the perovskite structure may be 350 nm to 1.1 탆.

Hereinafter, a specific application to which a perovskite structure compound according to an embodiment of the present invention is applied will be described as an example.

<Example: Solar cell>

3 is a flowchart illustrating a method of manufacturing a solar cell using a perovskite-structured compound as an active layer according to an embodiment of the present invention.

Referring to FIG. 3, a method of fabricating a solar cell including a perovskite-structured compound as an active layer according to an embodiment of the present invention includes forming an anode on a substrate in step S210.

The anode is an electrode for providing holes to the device, and can be formed through a solution process such as a screen printing, a transparent electrode, a reflective electrode, a metal paste, or a metal ink material in a colloidal state in a predetermined liquid.

Examples of the transparent electrode material include transparent and highly conductive indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2), zinc oxide (ZnO), metal oxide / metal / metal oxide multilayer, graphene, and a carbon nano tube.

The reflective electrode material may be at least one selected from the group consisting of Mg, Al, Ag, ITO, Ag / IZO, Al-Li, Ca, In) and magnesium-silver (Mg-Ag).

The metal paste may be one of Ag paste, Al paste, Au paste, and Cu paste material, or may be in the form of an alloy.

Wherein the metal ink material is at least one selected from the group consisting of Ag ink, Al ink, Au ink, Ca ink, Mg ink, Li ink and Cs ink And the metal material contained in the metal ink material may be ionized inside the solution.

Further, the anode may include two or more different materials.

Such an anode can be formed by using a deposition method such as CVD (Chemical Vapor Deposition), which is well known in the art, or by printing a paste metal ink mixed with a metal flake or a particle with a binder Or a method such as a coating method in which an electrode can be formed, and the method can be used without limitation as long as it can form an electrode.

At this time, the substrate can serve as a support for supporting the anode, and can be used without limitation as long as it is a substrate used in a conventional solar cell.

For example, the substrate may be a rigid substrate including a glass substrate, a polyethylene terephthalate (PET), a polyethylenenaphthylate (PEN), a polypropylene (PP), a polycarbonate (PC), a polyamide (PI), a triacetyl cellulose And plastic including PES (polyethersulfone), an aluminum foil, and a stainless steel foil may be used as the flexible substrate.

Then, in step S220, a hole transporting layer is formed on the anode.

The material of the hole transport layer may be a full solid-state or liquid electrolyte layer.

The high-temperature-type hole transport layer may be formed by spiro-MeOTAD (2,2 ', 7'-tetrakis- (N, N-di-p- methoxyphenyl- ), MDMO-PPV (poly [2-methoxy-5- (2 '' - 1,4-phenylene vinylene)], MEH- ethylhexyloxy-p-phenylene vinylene), poly (3-octylthiophene), poly (3-decylthiophene), poly (3-dodecylthiophene), poly (p- , Poly (2,1,3-benzothiadiazole-4,7-diyl [4,4-bis (2 (trifluoromethyl) phenyl) 2-ethylhexyl-4H-cyclopenta [2,1-b: 3,4-b '] dithiophene-2,6-diyl]]), Si-PCPDTBT (poly [(4,4'- dithieno [3,2-b: 2 ', 3'-d] silole) -2,6-diyl-alt- (2,1,3-benzothiadiazole) -4,7-diyl]), PBDTTPD (poly (4,8-diethylhexyloxyl) benzo [1,2-b: 4,5-b '] dithiophene) -2,6-diyl- , 6-dione) -1,3-diyl), PFDTBT (poly [2,7- (9- (2-ethylhexyl) -9- -di-2-thienyl-2 ', 1', 3'-benzothiadiazole)]), PFO-DBT (poly [2,7-9 , 9- (dioctyl-fluorene) -tallow-5,5- (4 ', 7'-di-2-thienyl-2', 1 ', 3'-benzothiadiazole)], PSiFDTBT (poly [ -dioctylsilafluorene) -2,7-diyl-alt- (4,7-bis (2-thienyl) -2,1,3-benzothiadiazole) -5,5'-diyl], PSBTBT (poly [ (2-ethylhexyl) dithieno [3,2-b: 2 ', 3'-d] silole) -2,6-diyl-6- (2,1,3-benzothiadiazole) diyl]), PCDTBT (poly [[9- (1-octylnonyl) -9H-carbazole-2,7-diyl] -2,5-thiophenediyl-2,1,3-benzothiadiazole- 5-thiophenediyl], PFB (poly (9,9'-dioctylfluorene-co-bis (N, N '- (4, Poly (3,4-ethylenedioxythiophene), poly (styrenesulfonate), PTAA (poly (3,4-ethylenedioxythiophene), PEDOT (triarylamine), poly (4-butylphenyl-diphenyl-amine), and copolymers thereof.

Wherein the liquid electrolyte hole transport layer is formed of at least one solvent selected from the group consisting of ethyl acetate, acetonitrile, toluene and methoxypropionitrile, at least one solvent selected from the group consisting of urea, but is not limited to, at least one additive selected from the group consisting of thiourea, butylpyridine, and guanidine thiocyanate.

At this time, the hole transport layer may be formed by a deposition method such as spin coating, dip coating, thermal deposition, or spray deposition.

In addition, a blocking layer may be further formed on the anode to improve adhesiveness to the hole transport layer formed on the anode. The barrier layer may be formed by applying a metal oxide precursor by a coating method and heating the metal oxide precursor. Alternatively, a metal oxide of TiO ₂ , ZnO, and Al ₂ O ₃ may be applied to form a barrier layer It can be used without limitation.

Thereafter, in step S230, a photoactive layer is formed on the hole transport layer to generate electricity by phtovoltaic.

The photoactive layer is formed by depositing a perovskite compound containing a polymer and a perovskite precursor solution.

For example, the polymer may be polystyrene (PS), but the polymer may be any polymeric material that can be combined with perovskite, but is not limited thereto.

The material of the perovskite structure may be CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI ₃ - _X Cl _X , CH ₃ NH ₃ PbCl ₃ , CH ₃ NH ₃ PbI ₃ - _X Br _X , or CH ₃ NH ₃ PbBr _{3 A} combination of these different halide (I, Cl, Br) materials may be used, but is not limited thereto.

Particularly, the material of the perovskite structure is CH ₃ NH ₃ I, CH ₃ NH ₃ Cl, CH ₃ NH ₃ Br, and organic materials PbI ₂ , PbCl ₂ and PbBr ₂ , 0.5 to 1: 4 by weight.

According to an embodiment of the present invention, a perovskite structure compound containing a polymer can be formed through a solution process, and as the solvent contained in the perovskite precursor solution, dimethylsulfoxide, acetonitrile , At least one selected from the group consisting of dimethylformamide, alcohol, cyclohexane, and toluene.

In addition to dimethylsulfoxide, at least one of dimethylformamide, alcohol, cyclohexane, toluene and an organic solvent may be used as the solvent.

At this time, the solvent may be a mixture of dimethyl sulphoxide and 5% by volume to 50% by volume of the butyrolactone.

The photoactive layer may be formed by a vacuum process, a thermal deposition process, a spin coating process, a slot printing process, or an ink-jet printing process, But is not limited to, spin coating or inkjet printing on the side.

In addition, the photoactive layer is preferably a bulk-heterojunction structure in order to enhance the collection efficiency of the separated electron-hole pairs (excretions), but is not limited thereto.

Hereinafter, a method for producing a perovskite structure compound containing a polymer of the present invention as a photoactive layer will be described in detail.

Preparation of perovskite precursor solution

Under nitrogen, 0.1904 g of CH ₃ NH ₃ I and 0.552 g of CH ₃ NH ₃ Cl were added to a solution of 0.33 g of dimethyl sulfoxide (DMSO) and 0.784 g of gamma-butyrolactone (GBL) To prepare a perovskite precursor solution.

Preparation of perovskite structure compounds

Polystyrene (PS) was added to the prepared perovskite precursor solution on the hot plate while controlling the temperature in the range of 0 wt% to 4.5 wt% and mixed at a temperature of 70 ° C for 6 hours to prepare a perovskite structure compound .

Formation of perovskite photoactive layer

The perovskite structure compound solution prepared above is spin-coated. Toluene (toluene) or chlorobenzene solvent is dropped in the middle of spin coating to treat the coated surface. And then heat-treated on a hot plate at 100 캜 for about 2 hours to form an active layer.

Referring again to FIG. 3, in step S240, an electron transporting layer is formed on the photoactive layer.

The electron transporting layer is a layer added for high efficiency of the device by moving the electrons generated in the photoactive layer to the cathode. The electron transporting layer includes fullerene (C60), fullerene derivative, perylene, polybenzimidazole (PBI), and PTCBI (6,6) -phenyl-C61-butyric acid-methylester) or PCBCR ((6,6) -phenyl- 6,6) -phenyl-C61-butyric acid cholesteryl ester. However, it is not limited to these materials.

In particular, although PCBM is used as the electron transporting layer in the above-described embodiments, the present invention is not limited thereto, and any material usable as the electron transporting layer can be used without limitation.

The electron transport layer may be formed by a coating method or a coating method using sputtering, E-Beam, thermal evaporation, spin coating, dip coating, screen printing, inkjet printing, spray evaporation, doctor blade or gravure printing .

Thereafter, in step S250, a cathode is formed on the electron transporting layer.

The cathode is an electrode for providing electrons to a device, and may be a metal material, an ionized metal material, an alloy material, a metal ink material in a colloid state in a predetermined liquid, or a transparent metal oxide.

Specific examples of the metal material include Li, Mg, Al, Al-Li, Ca, Mg-In, (Pt), Au, Ni, Cu, Ba, Ag, In, Ru, Pd, Rh ), Iridium (Ir), osmium (Os) and cesium (Cs) may be used. Further, carbon (C), a conductive polymer, or a combination thereof may be used as the metal material.

The transparent metal oxide may include ITO (Indium Tin Oxide), FTO (Fluorine-doped Tin Oxide), ATO (Antimony Tin Oxide), and AZO (Aluminum-doped Zinc Oxide). Here, ITO is generally used as a material for forming an anode, but in the case of an inverted solar cell structure, ITO may be used as a material for forming an anode to form a transparent cathode. The transparent metal oxide electrode may be formed by applying a sol-gel, spray pyrolysis, sputtering, ALD (atomic layer deposition), or electron beam evaporation (e-beam evaporation) .

The cathode may be formed by a vapor deposition method such as CVD (Chemical Vapor Deposition) or by a coating method such as a method of printing a paste metal ink in which a metal flake or a particle is mixed with a binder Can be used, and any method capable of forming an electrode can be used without being limited thereto.

In one embodiment of the present invention, a solar cell has a normal structure in which a substrate, an anode, a hole transporting layer, a photoactive layer, an electron transporting layer, and a cathode are sequentially formed, but a substrate, a cathode, an electron transporting layer, a photoactive layer, And an anode are sequentially formed on a substrate.

4 is a cross-sectional view of a solar cell including a perovskite structure compound as an active layer according to an embodiment of the present invention.

In this solar cell 300, ITO is used for the anode 310 formed on the substrate, PEDOT: PSS is used for the hole transport layer 320, and CH ₃ NH ₃ PbI ₃ is used for the photoactive layer 330. (w / PS) is used for the electron transport layer 340, PCBM is used for the electron transport layer 340, and Al is used for the cathode 350.

In particular, the photoactive layer 330 can be formed by depositing a perovskite compound in which a perovskite precursor solution containing the above-mentioned polymer and a perovskite structure material is mixed.

5 is an energy band diagram using a perovskite structure compound formed by mixing a solution of a polystyrene and a perovskite precursor according to an embodiment of the present invention.

In the photoactive layer of the solar cell, the electrons and holes of the exciton generated by the absorption of light are separated so that the electrons are attracted to the lowest unoccupied molecular orbital (LUMO) of the electron acceptor material, It is present in the highest occupied molecular orbital (HOMO).

5, the highest occupied molecular orbital (HOMO) level of the perovskite structure compound as the photoactive layer is -5.4 eV, the lowest unoccupied molecular orbital (LUMO) The level is -3.9 eV, it can be confirmed that there is an advantage that the positive and the electron move to the positive electrode and the negative electrode in the photoactive layer have excellent conditions.

In addition, it can be seen that the band gap of the perovskite-structured compound exhibits an excellent absorbance in the visible light region (300 nm to 800 nm) at 1.5 eV.

FIG. 6 is a graph showing the degree of absorption according to the content of the polystyrene in the perovskite structure compound according to an embodiment of the present invention. FIG.

Referring to FIG. 6, it can be seen that the perovskite-structured compound including the polystyrene according to the embodiment of the present invention exhibits higher absorbance than pure perovskite. Particularly, when the content of the polystyrene is 3.0 wt%, it can be confirmed that it has the strongest absorbance value.

7a to 7d show scanning electron microscope (SEM) images at the surface of a sample according to the content of polystyrene in the perovskite structure compound according to an embodiment of the present invention.

More specifically, FIG. 7A shows an electron scanning microscope (SEM) image of a pure perovskite sample surface, FIG. 7B shows the case where the content of the polystyrene is 1.5 wt%, FIG. 7C shows the content of the polystyrene 7d shows an electron scanning microscope (SEM) image at the surface when the content of the polystyrene is 4.5wt%.

 7A and 7B, it can be confirmed that the crystal size of the material of the perovskite structure not including the polystyrene has a crystal size of 100 to 200 nm, and the crystal size of 1.5 wt% of the polystyrene The perovskite structure of the compound of the perovskite structure according to the embodiment of the present invention has a crystal size of 300 to 400 nm.

7C and 7D, in the case of the perovskite structure material of the perovskite structure compound according to the embodiment of the present invention including 3.0 wt% of the polystyrene, a crystal of 550 to 650 nm It can be confirmed that the perovskite structure material of the perovskite structure compound according to the embodiment of the present invention including 4.5 wt% of polystyrene has a size of 1.1 mu m or more.

According to the embodiment of the present invention, the crystal size of the material of the perovskite structure can be adjusted according to the content of the polystyrene.

7E to 7H show scanning electron microscope (SEM) images of a sample section according to the content of the polystyrene of the perovskite structure compound according to the embodiment of the present invention.

More specifically, FIG. 7E shows a scanning electron microscope (SEM) image of a sample section of pure perovskite, FIG. 7F shows the case where the content of the polystyrene is 1.5 wt%, FIG. 7G shows the content of the polystyrene 7h shows an electron scanning microscope (SEM) image at the cross section of the sample when the content of the polystyrene is 4.5wt%.

7A to 7D, it is confirmed that the crystal size of the material of the perovskite structure increases in accordance with the content of the polystyrene even in the cross sectional scanning electron microscope (SEM) like the surface scanning electron microscope (SEM) have.

8A-8H illustrate 3D atomic force microscopy (AFM) and 3D conductive atomic force microscopy (C-AFM) images according to the content of polystyrene in the perovskite structured compound according to an embodiment of the present invention.

More specifically, Figures 8a and 8b illustrate pure 3D peristaltic 3D atomic force microscopy (AFM) and 3D conductive atomic force microscopy (C-AFM) images, and Figures 8c and 8d show the content of a polystyrene of 1.5wt %, Figs. 8e and 8f show that when the content of the polystyrene is 3.0 wt%, Figs. 8G and 8H show the 3D atomic force microscope (AFM) and the 3D conductive atomic force microscope (AFM) when the content of the polystyrene is 4.5 wt% C-AFM) image.

Figures 9a-9d illustrate atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM) images at the surface according to the polystyrene content of a perovskite structure compound according to an embodiment of the present invention .

More specifically, FIG. 9A shows an atomic force microscope (AFM) and a conductive atomic force microscope (C-AFM) image at the surface of a pure perovskite, and FIG. 9B shows a case where the content of a polystyrene is 1.5 wt% , FIG. 9C shows an atomic force microscope (AFM) and a conductive atomic force microscope (C-AFM) image when the content of the polystyrene is 3.0 wt%, and FIG. 9D shows the case where the content of the polystyrene is 4.5 wt% .

The atomic force microscope (AFM) and the atomic force microscope (AFM) according to the variation of the content of the polystyrene in the perovskite structure according to the embodiment of the present invention shown in Figs. 8A to 8H and Figs. 9A to 9D, The values of the microscope (C-AFM) are summarized in Table 1.

[Table 1]

In Table 1, Ra (Average Roughness), Rq (RMS Roughness), Rq-v (peak-to-valley value) and Cmax (Conductive current) are shown.

 Referring to Table 1, a perovskite structure compound containing 3.0 wt% of polystyrene according to an embodiment of the present invention exhibited the best film roughness and the highest conductive current , And the content of the polystyrene increases to 4.5 wt%, which indicates that the roughness and the conductive current characteristics are deteriorated.

In addition, as the Cmax (Conductive current) is increased, the conductivity is improved and the optical short-circuit current density Jsc is increased. Therefore, if the perovskite structure compound containing the polystyrene according to the present invention is used as the photoactive layer of the solar cell, the photo conversion efficiency can be improved.

10A and 10B are graphs showing XRD (X-ray diffraction) measurement results according to the content of polystyrene in a perovskite-structured compound thin film according to an embodiment of the present invention.

The peak intensity of the perovskite-structured compound containing 3.0 wt% of the polystyrene according to the embodiment of the present invention is higher than the peak intensity of the perovskite containing no polystyrene in the crystal orientation of 14.1 DEG and 28.2 DEG 110, and (220), respectively.

This shows that the perovskite structure compound containing 3.0 wt% of the polystyrene according to the embodiment of the present invention has a better quality thin film.

FIGS. 11A and 11B are graphs showing the current-voltage characteristics of a solar cell according to the content of a polystyrene in a perovskite structure compound according to an embodiment of the present invention. FIG.

FIG. 11A shows current-voltage characteristics of a solar cell including a perovskite structure compound as a photoactive layer according to an embodiment of the present invention in a dark state according to the content of the polystyrene, and FIG. 11B Shows a graph of current voltage in a light state of a solar cell including a perovskite structure compound according to an embodiment of the present invention in accordance with the content of the polystyrene.

The current-voltage characteristics in the graphs of FIGS. 11A and 11B are summarized in Table 2.

[Table 2]

Here, Jsc denotes an optical short-circuit current density Jsc, Voc denotes an optical open-circuit voltage, FF denotes a fill factor, PCE denotes an energy conversion efficiency, and the charging rate FF denotes a voltage value Vmax The current density Jmax / (Voc x Jsc) and the energy conversion efficiency can be calculated as FF x (Jsc x Voc) / Pin and Pin = 100 [mW / cm 2].

Referring to FIGS. 11A, 11B, and Table 2, the photoconversion efficiency was 11.7% when the polystyrene was not used as the photoactive layer, while the polystyrene according to the embodiment of the present invention was 1.5 wt % And 3.0 wt%, respectively, the photoconversion efficiency was improved to 13.0% and 13.3%, respectively.

12A to 12D are graphs showing current-voltage characteristics according to the voltage sweep direction according to the content of the polystyrene in the solar cell including the perovskite structure compound according to the embodiment of the present invention FIG.

More specifically, FIG. 12A shows a graph of current-voltage characteristics according to a voltage sweep direction of a pure perovskite, FIG. 12B shows a case where the content of the polystyrene is 1.5 wt%, FIG. FIG. 12D shows a graph of current-voltage characteristics according to the voltage sweep direction when the content of the polystyrene is 3.0 wt% and the content of the polystyrene is 4.5 wt%.

The current-voltage characteristics according to the voltage sweep direction in FIGS. 12A to 12D are summarized in Table 3.

[Table 3]

Referring to FIGS. 12A to 12D and Table 3, in the case of the current-voltage characteristic according to the sweeping direction of the boltize, the perovskite solar cell including the polystyrene according to the embodiment of the present invention has a change in the light conversion efficiency While the perovskite solar cell not including the polystyrene shows a tendency to increase the light conversion efficiency.

FIG. 13 is a graph showing the external quantum efficiency (EQE) characteristics according to the content of the polystyrene in the bean cell including the perovskite structure compound as the photoactive layer according to the embodiment of the present invention.

Referring to FIG. 13, the external quantum efficiency (EQE) can be measured when the perovskite structure compound according to the embodiment of the present invention contains 1.5 wt% and 3.0 wt% of the polystyrene, As shown in Fig.

FIG. 14 is a graph showing time-divisional photoluminescence (TRPL) characteristics of a solar cell including a perovskite structure compound as a photoactive layer according to the content of the polystyrene.

Referring to FIG. 14, a solar cell including a perovskite structure compound including a polystyrene as a photoactive layer according to an embodiment of the present invention includes a perovskite structure material containing no polystyrene, It can be confirmed that the exciton quenching efficiency is superior to that of the solar cell including the solar cell.

15A to 15D are graphs showing stability characteristics of a solar cell according to the content of the polystyrene in the solar cell including the perovskite structure compound as the photoactive layer according to the embodiment of the present invention.

More specifically, FIG. 15A shows a Normallzed energy conversion efficiency (Normallzed PCE) characteristic graph, FIG. 15B shows a Normallzed optical open-circuit voltage (Normallzed Voc), FIG. 15C shows a Normallzed optical short- And FIG. 15D shows a Normallzed FF characteristic characteristic graph.

15A to 15D, it can be seen that the perovskite-structured compound including the polystyrene according to the embodiment of the present invention has superior stability to the perovskite-structured substance without the polystyrene have.

As described above, when the content of the polystyrene in the solar cell including the perovskite structure compound as the photoactive layer according to an embodiment of the present invention is 0.5 wt% to 4.0 wt%, it is confirmed that the photoelectric conversion efficiency is high .

Hereinafter, embodiments in which the perovskite structure compound of the present invention is included as an active layer of a thin film transistor will be described.

< Example : Thin Film Transistor>

According to another embodiment of the present invention, the perovskite structure compound may be included as an active layer of the thin film transistor.

The thin film transistor includes a substrate, an active layer formed on the substrate, a source electrode and a drain electrode formed to be spaced apart from each other on the active layer, a passivation layer formed to protect the active layer on the active layer, and a gate electrode formed on the passivation layer.

First, the substrate may be a substrate used for manufacturing a general semiconductor device. For example, the substrate may be any one of a glass substrate, a plastic substrate, and a silicon substrate.

The active layer according to another embodiment of the present invention uses a perovskite structure compound in which a polymer and a perovskite precursor solution are mixed as an active layer, and the polymer controls the rate of crystallization of a perovskite structure material Control the crystal size, and improve the charge transfer efficiency through the control of the crystal size.

The source electrode and the drain electrode may be formed of at least one of a metal of Al, Cr, Au, Ti, or Ag and a transparent oxide of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ITZO (Indium Tin Zinc Oxide) And may be formed as a single layer or multiple layers, or a double layer in which the metal and the transparent oxide are respectively deposited.

The source electrode and the drain electrode may be formed by forming an ITO layer on the entire surface of the active layer using an RF (Radio Frequency) magnetron sputtering method, and then patterning the ITO layer.

The passivation layer is formed on the active layer to protect the active layer.

Specifically, the passivation layer is formed on the active layer to prevent the influence of moisture and hydrogen acting on the surface of the active layer from the outside, thereby preventing the inherent electrical characteristics of the active layer from deteriorating. This can reduce the hysteresis in which the thin film transistor is deformed.

In addition, the passivation layer is formed entirely to cover the active layer, the source electrode, and the substrate on which the drain electrode is formed, so that the active layer, the source electrode, and the drain electrode function as a gate insulating layer that can insulate the gate electrode to be formed later . Thereby, it is not necessary to further form a gate insulating layer, the size of the semiconductor element can be reduced, and the processing time can be shortened.

The passivation layer according to an exemplary embodiment of the present invention may be formed by atomic layer deposition such as atomic layer deposition (ALD) or plasma enhanced ALD (PALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering .

The passivation layer is aluminum oxide (Al ₂ O _3), hafnium (HfO _2), silicon oxide (SiO _2), magnesium oxide (MgO), yttrium oxide (Y ₂ O _3), titanium oxide (TiO ₂₎ oxide, Nitrogen (SiNx), and an organic film.

The organic film may be a general general purpose polymer (PMMA, PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an arylether polymer, an amide polymer, a fluorine polymer, a p- Based polymers, and blends thereof.

The passivation layer may also be formed as a composite laminate of an inorganic film and an organic film.

The gate electrode may be formed of at least one of a metal of Al, Cr, Au, Ti, or Ag and a transparent oxide of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide) or ITZO (Indium Tin Zinc Oxide) And may be formed as a single layer or multiple layers or a double layer in which the metal and the transparent oxide are respectively deposited.

For example, the gate electrode may be formed by forming an ITO layer on the entire surface of the passivation layer using an RF magnetron sputtering method and then patterning the ITO layer.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

300: Solar cell
310: anode
320: hole transport layer
330: photoactive layer
340: electron transport layer
350: cathode

Claims (11)

Polymer; And
A perovskite precursor solution containing a perovskite structure material
Is mixed,
The material of the perovskite structure,
Of _{CH 3 NH 3 PbI 3-X} Cl X, CH 3 NH 3 PbCl 3, CH3NH 3 PbI 3-X Br X , and CH ₃ NH ₃ PbBr ₃ (x is 0 <x <3) at least one or more selected from Including,
The polymer controls the rate of crystallization of the material of the perovskite structure by decreasing the rate of evaporation of the solvent,
The concentration of the polymer ranges from 0.5 wt% to 6 wt%
Wherein the material of the perovskite structure is controlled to have a crystal size ranging from 350 nm to 1.1 탆 by controlling the concentration of the polymer.
The method according to claim 1,
The polymer may be selected from the group consisting of polystyrene (PS), polymethyl methacrylate (PMMA), polyetherimide (PEI), poly (ethyleneimine) ethoxylated (PEIE), poly (triarylamine), poly (3-hexylthiophene), PTB7 3,4-b] -thiophene-co-benzodithiophene), F8BT (poly (9,9'-dioctylfluorene-cobenzothiadiazole), PFN (Poly [9,9- poly (n-vinylcarbazole), poly (9,9'-dioctylfluorene-co-N- (4-butylphenyl) diphenylamine), Poly-TPD poly (N, N'-bis (phenyl) benzidine), PFO (polyfluorene), poly [N-9'-heptadecanyl-2,7- , [5- (4 ', 7'-di-2-thienyl-2', 1 ', 3'-benzothiadiazole)], PDPP3T (Poly [ 5,6-tetrahydro-3,6-dioxopyrrolo [3,4-c] pyrrole-1,4-diyl} -one - {[2,2 ': 5', 2 '' - terthiophene] -diyl}], PDPPBTT (Poly {2,2 '- (2,5-bis (2-octyldodecyl) -3,6-dioxo-2,3,5,6-tetrahydropyrrolo [3,4- 2,5-diyl-alti-thiophen-2,5-diyl), PCPDTBT (poly [2,1,3-benzothiadiazole-4 , 7-diyl [4,4-bis (2-ethylhexyl-4H-cyclopenta [2,1-b: 3,4-b '] dithiophene-2,6-diyl]]), PBDTTT- 4,8-bisalkyloxybenzo [1,2-b: 4,5-b '] dithiophene-2,6-diyl-lower alkyl thieno [3,4-b] thiophene-2-carboxylate] ), PBDTTT-CF (poly [4,8-bis (2-ethylhexyloxy) benzo (1,2-b: 4,5- (2-ethylhexyl) thiophen-2-yl) benzo [b] 1,2-b; 4,5-b '] dithiophene-2,6-diyl-alt- (4- (2-ethylhexyl) -3-fluorothieno [3,4- b] thiophene- 2-6-diyl)]). &Lt; / RTI &gt;
delete delete delete Polymer; And
A perovskite structure compound in which a perovskite precursor solution is mixed is used as a photoactive layer,
The material of the perovskite structure,
Of _{CH 3 NH 3 PbI 3-X} Cl X, CH 3 NH 3 PbCl 3, CH3NH 3 PbI 3-X Br X , and CH ₃ NH ₃ PbBr ₃ (x is 0 <x <3) at least one or more selected from Including,
The polymer controls the rate of crystallization of the material of the perovskite structure by decreasing the rate of evaporation of the solvent,
The concentration of the polymer ranges from 0.5 wt% to 6 wt%
The material of the perovskite structure is controlled to have a crystal size ranging from 350 nm to 1.1 μm by controlling the concentration of the polymer, and the charge transfer efficiency is improved by controlling the crystal size .
Polymer; And
A perovskite structure compound in which a perovskite precursor solution is mixed is used as an active layer,
The material of the perovskite structure,
Of _{CH 3 NH 3 PbI 3-X} Cl X, CH 3 NH 3 PbCl 3, CH3NH 3 PbI 3-X Br X , and CH ₃ NH ₃ PbBr ₃ (x is 0 <x <3) at least one or more selected from Including,
The polymer controls the rate of crystallization of the material of the perovskite structure by decreasing the rate of evaporation of the solvent,
The concentration of the polymer ranges from 0.5 wt% to 6 wt%
The material of the perovskite structure is controlled to have a crystal size ranging from 350 nm to 1.1 μm by controlling the concentration of the polymer, and the charge transfer efficiency is improved by controlling the crystal size .
Mixing a perovskite structure material and a solvent to form a perovskite precursor solution; And
Mixing the polymer in the perovskite precursor solution,
The material of the perovskite structure,
Of _{CH 3 NH 3 PbI 3-X} Cl X, CH 3 NH 3 PbCl 3, CH3NH 3 PbI 3-X Br X , and CH ₃ NH ₃ PbBr ₃ (x is 0 <x <3) at least one or more selected from Including,
The polymer controls the rate of crystallization of the material of the perovskite structure by decreasing the rate of evaporation of the solvent,
The concentration of the polymer ranges from 0.5 wt% to 6 wt%
The material of the perovskite structure is controlled to have a crystal size of 350 nm to 1.1 탆 by controlling the concentration of the polymer,
Wherein the charge transfer efficiency is improved by using the perovskite structure.
9. The method of claim 8,
The solvent
Wherein the perovskite structure comprises at least one organic solvent selected from the group consisting of dimethyl sulfoxide, dimethyl sulfoxide, acetonitrile, dimethylformamide, alcohol, cyclohexane, and toluene. &Lt; / RTI &gt;
10. The method of claim 9,
Wherein the solvent is mixed at 5% by volume to 50% by volume of the perovskite compound.
Forming an anode on the substrate;
Forming a hole transport layer on the anode;
Forming a photoactive layer on the hole transport layer;
Forming an electron transport layer on the photoactive layer; And
And forming a cathode on the electron transporting layer,
The photoactive layer uses a perovskite structure compound in which a polymer and a perovskite precursor solution are mixed,
The material of the perovskite structure,
Of _{CH 3 NH 3 PbI 3-X} Cl X, CH 3 NH 3 PbCl 3, CH3NH 3 PbI 3-X Br X , and CH ₃ NH ₃ PbBr ₃ (x is 0 <x <3) at least one or more selected from &Lt; / RTI &
The polymer reduces the rate of evaporation of the solvent to control the rate of crystallization of the perovskite structure material,
The concentration of the polymer ranges from 0.5 wt% to 6 wt%
The material of the perovskite structure is controlled to have a crystal size of 350 nm to 1.1 탆 by controlling the concentration of the polymer,
Thereby improving the charge transfer efficiency of the solar cell.

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