JP2011054265A - 光学データ記憶媒体及びその使用方法 - Google Patents
光学データ記憶媒体及びその使用方法 Download PDFInfo
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- JP2011054265A JP2011054265A JP2010186776A JP2010186776A JP2011054265A JP 2011054265 A JP2011054265 A JP 2011054265A JP 2010186776 A JP2010186776 A JP 2010186776A JP 2010186776 A JP2010186776 A JP 2010186776A JP 2011054265 A JP2011054265 A JP 2011054265A
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/245—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing a polymeric component
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
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- G—PHYSICS
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- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
- G11B7/24035—Recording layers
- G11B7/24044—Recording layers for storing optical interference patterns, e.g. holograms; for storing data in three dimensions, e.g. volume storage
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
- G03H2001/026—Recording materials or recording processes
- G03H2001/0264—Organic recording material
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Abstract
【解決手段】光学データ記憶媒体は、化学線を吸収して、三重項励起時に変化を受ける反応体への上位三重項エネルギー伝達を引き起こすことができる非線形増感剤を含んでいる。媒体の屈折率変化(Δn)は約0.005以上、さらには約0.05以上である。
【選択図】図3
Description
X=H(ポリビニルシンナメート(PVCm))、OMe(ポリビニル4−メトキシシンナメート(PVMeOCm))又はCl(ポリビニル4−クロロシンナメート(PVClCm))である。
X=(パラ)−Cl:(2E,2’E)−((1S,2S)−シクロヘキサン−1,2−ジイル)ビス(3−(4−クロロフェニル)アクリレート)、又は
X=(パラ)−MeO:(2E,2’E)−((1S,2S)−シクロヘキサン−1,2−ジイル)ビス(3−(4−メトキシフェニル)アクリレート)である。
X=(パラ)−Cl:(2E,2’E)−N,N’−((1S,2S)−シクロヘキサン−1,2−ジイル)ビス(3−(4−クロロフェニル)アクリルアミド)、又は
X=(パラ)−MeO:(2E,2’E)−N,N’−((1S,2S)−シクロヘキサン−1,2−ジイル)ビス(3−(4−メトキシフェニル)アクリルアミド)である。
マイクロホログラムを実証すると共に、マイクロホログラムを書き込んだ後の反射率を記録するための薄膜試料を以下のようにして調製した。
フタロシアニン/ポリビニルシンナメート(PVCm)。68wt%のシンナメートを含むPVCm(MW 100000)1gを1:1ジクロロエタン/塩化メチレンに溶解する。10mg(1wt%)のInPc(2,9,16,23−テトラ−tert−ブチル−29H−31H−フタロシアニンインジウム)染料を添加し、70℃に保ったホットプレート上での加熱を行いながら材料を撹拌機で溶解する。次いで、0.450mmシリンジフィルターを用いて溶液を濾過し、濾過した溶液をガラスプレートセットアップのガラスリム(直径5cm)中に注ぎ、45℃に12時間及び75℃に一晩保ったホットプレート上で乾燥する。ホットプレート上での乾燥後、フィルムをガラスプレートから除去し、真空中において70℃で6時間乾燥する。
フタロシアニン/ポリビニルシンナメート(PVCm)。68wt%のシンナメートを含むPVCm(MW 100000)1gを1:1ジクロロエタン/塩化メチレンに溶解する。2wt%のZnPc(2,9,16,23−テトラ−tert−ブチル−29H−31H−フタロシアニン亜鉛)染料を添加し、70℃に保ったホットプレート上での加熱を行いながら材料を撹拌機で溶解する。次いで、0.450mmシリンジフィルターを用いて溶液を濾過し、濾過した溶液をガラスプレートセットアップのガラスリム(直径5cm)中に注ぎ、45℃に12時間及び75℃に一晩保ったホットプレート上で乾燥する。ホットプレート上での乾燥後、フィルムをガラスプレートから除去し、真空中において70℃で6時間乾燥する。
サブフタロシアニン/ポリビニルシンナメート(PVCm)。68wt%のシンナメートを含むPVCm(MW 100000)1gを1:1ジクロロエタン/塩化メチレンに溶解した。1.3wt%のdiBrSubPc(3,5−ジブロモフェノキシ[サブフタロシアニナト]ホウ素(III))を添加し、70℃に保ったホットプレート上での加熱を行いながら材料を撹拌機で溶解した。次いで、0.450mmシリンジフィルターを用いて溶液を濾過し、濾過した溶液をガラスプレートセットアップのガラスリム(直径5cm)中に注ぎ、45℃に12時間及び75℃に一晩保ったホットプレート上で乾燥した。ホットプレート上での乾燥後、フィルムをガラスプレートから除去し、真空中において70℃で6時間乾燥した。
サブフタロシアニン/ポリビニルシンナメート(PVCm)。68wt%のシンナメートを含むPVCm(MW 100000)1gを1:1ジクロロエタン/塩化メチレンに溶解した。1.3wt%の3IPhOSubPc(3−ヨードフェノキシ[サブフタロシアニナト]ホウ素(III))を添加し、70℃に保ったホットプレート上での加熱を行いながら材料を撹拌機で溶解した。次いで、0.450mmシリンジフィルターを用いて溶液を濾過し、濾過した溶液をガラスプレートセットアップのガラスリム(直径5cm)中に注ぎ、45℃に12時間及び75℃に一晩保ったホットプレート上で乾燥した。ホットプレート上での乾燥後、フィルムをガラスプレートから除去し、真空中において70℃で6時間乾燥した。
エチニル白金/ポリビニルシンナメート(PVCm)。68wt%のシンナメートを含むPVCm(MW 100000)1gを1:1ジクロロエタン/塩化メチレンに溶解した。0.5wt%のPPE(トランス−ビス(トリブチルホスフィン)ビス(4−エチニルビフェニル)白金)を添加し、70℃に保ったホットプレート上での加熱を行いながら材料を撹拌機で溶解した。次いで、0.450mmシリンジフィルターを用いて溶液を濾過し、濾過した溶液をガラスプレートセットアップのガラスリム(直径5cm)中に注ぎ、45℃に12時間及び75℃に一晩保ったホットプレート上で乾燥した。ホットプレート上での乾燥後、フィルムをガラスプレートから除去し、真空中において70℃で6時間乾燥した。
エチニル白金/ポリビニルシンナメート(PVCm)。68wt%のシンナメートを含むPVCm(MW 100000)1gを1:1ジクロロエタン/塩化メチレンに溶解した。1.5wt%のPE2(トランス−ビス(トリブチルホスフィン)ビス(4−エチニル−1−(2−フェニルエチニル)ベンゼン)白金)を添加し、70℃に保ったホットプレート上での加熱を行いながら材料を撹拌機で溶解した。次いで、0.450mmシリンジフィルターを用いて溶液を濾過し、濾過した溶液をガラスプレートセットアップのガラスリム(直径5cm)中に注ぎ、45℃に12時間及び75℃に一晩保ったホットプレート上で乾燥した。ホットプレート上での乾燥後、フィルムをガラスプレートから除去し、真空中において70℃で6時間乾燥した。
マイクロホログラフィックスタティックテスターシステムを用いて、本発明の光学データ記憶媒体中へのマイクロホログラム記録の実験的証明を行った。
201 区画
202 焦点
Claims (10)
- ポリマーマトリックス、
三重項励起時に変化を受けることで屈折率変化を引き起こすことができる反応体、及び
化学線を吸収して前記反応体への上位三重項エネルギー伝達を引き起こすことができる非線形増感剤
を含んでなる光学データ記憶媒体であって、当該媒体の屈折率変化が約0.005以上である、光学データ記憶媒体。 - 当該媒体の屈折率変化が約0.05以上である、請求項1記載の光学データ記憶媒体。
- 反応体がシンナメート、シンナメート誘導体、シンナムアミド誘導体又はこれらの組合せからなる、請求項1記載の光学データ記憶媒体。
- 反応体が、ポリビニルシンナメート(PVCm)、ポリビニル4−クロロシンナメート(PVClCm)、ポリビニル4−メトキシシンナメート(PVMeOCm)、(2E,2’E)−((1S,2S)−シクロヘキサン−1,2−ジイル)ビス(3−フェニルアクリレート)、(2E,2’E)−((1S,2S)−シクロヘキサン−1,2−ジイル)ビス(4−クロロフェニルアクリレート)、(2E,2’E)−((1S,2S)−シクロヘキサン−1,2−ジイル)ビス(4−メトキシフェニルアクリレート)、(2E,2’E)−N,N’−((1S,2S)−シクロヘキサン−1,2−ジイル)ビス(3−フェニルアクリルアミド)、(2E,2’E)−N,N’−((1S,2S)−シクロヘキサン−1,2−ジイル)ビス(3−(4−クロロフェニル)アクリルアミド)、(2E,2’E)−N,N’−((1S,2S)−シクロヘキサン−1,2−ジアリール)ビス(3−(4−メトキシフェニル)アクリルアミド)又はこれらの組合せからなる、請求項3記載の光学データ記憶媒体。
- 当該媒体がマイクロホログラフィックデータを記憶し得る、請求項1記載の光学データ記憶媒体。
- 非線形増感剤が逆飽和吸収体による逐次二光子吸収プロセスを含む、請求項1記載の光学データ記憶媒体。
- 非線形増感剤がフタロシアニン染料、サブフタロシアニン染料又はアルキニル白金染料からなる、請求項6記載の光学データ記憶媒体。
- さらに、非線形増感剤と反応体との間でエネルギーを伝達し得る媒介物を含む、請求項1記載の光学データ記憶媒体。
- ポリマーマトリックスが、1種以上のポリビニルアルコール、ポリ(アルキルメタクリレート)、ポリ(アルキルアクリレート)、ポリスチレン、ポリカーボネート、ポリアクリレート、ポリ(塩化ビニリデン)、ポリ(酢酸ビニル)又はこれらの組合せを含む、請求項1記載の光学データ記憶媒体。
- 光学データ記憶方法であって、
ポリマーマトリックス、三重項励起時に変化を受けることで屈折率変化を引き起こすことができる反応体、及び化学線を吸収して前記反応体への上位三重項エネルギー伝達を引き起こすことができる非線形増感剤を含む光学データ記憶媒体であって、当該媒体の屈折率変化が約0.005以上である光学データ記憶媒体を用意する段階、並びに
前記光学データ記憶媒体中にマイクロホログラムを記録する段階
を含んでなる光学データ記憶方法。
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DE112012001182T5 (de) | 2011-03-11 | 2013-12-12 | Thk Co., Ltd. | Windturbinengenerator |
JP2012216274A (ja) * | 2011-03-31 | 2012-11-08 | General Electric Co <Ge> | 多波長ホログラフィックシステム及び方法 |
KR20120140630A (ko) * | 2011-06-21 | 2012-12-31 | 제너럴 일렉트릭 캄파니 | 광학 데이터 저장 매체에 데이터를 기록하는 방법 및 광학 데이터 저장 매체 |
JP2013003590A (ja) * | 2011-06-21 | 2013-01-07 | General Electric Co <Ge> | 光データ記憶媒体へのデータ記録方法及び光データ記憶媒体 |
JP2013109345A (ja) * | 2011-11-17 | 2013-06-06 | General Electric Co <Ge> | 光学データ記憶媒体のための逆可飽和吸収増感剤及び使用方法 |
JPWO2014057688A1 (ja) * | 2012-10-12 | 2016-09-05 | 新日鉄住金化学株式会社 | 光誘起複屈折材料、それを用いた光記録媒体および光記録方法 |
WO2016125252A1 (ja) * | 2015-02-03 | 2016-08-11 | 日立コンシューマエレクトロニクス株式会社 | ホログラム記録再生装置、及びそれに用いる光学部品の光軸補正方法 |
WO2022244429A1 (ja) * | 2021-05-18 | 2022-11-24 | パナソニックIpマネジメント株式会社 | 非線形光吸収材料、記録媒体、情報の記録方法及び情報の読出方法 |
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CN102005213B (zh) | 2015-05-13 |
US8182967B2 (en) | 2012-05-22 |
EP2290650A1 (en) | 2011-03-02 |
CN102005213A (zh) | 2011-04-06 |
TWI524337B (zh) | 2016-03-01 |
TW201131563A (en) | 2011-09-16 |
KR20110023823A (ko) | 2011-03-08 |
EP2290650B1 (en) | 2012-11-28 |
KR101716500B1 (ko) | 2017-03-14 |
US20110051586A1 (en) | 2011-03-03 |
JP5496823B2 (ja) | 2014-05-21 |
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