JP2011040629A - Film formed by using cyclic siloxane compound having spiro structure, and method of preparing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electric insulating film having superior mechanical strength by a PECVD method, and to provide a semiconductor electronic device having the same arranged. <P>SOLUTION: The electric insulating film with the superior mechanical strength is formed by the PECVD method using, as a raw material gas, 2,2,4,4,6,6-tri(butane-1,4-diyl)cyclotrisiloxane, 2,2,4,4,6,6,8,8-tetra(butane-1,4-diyl)cyclotetrasiloxane, 2,2,4,4,6,6-tri(pentane-1,5-diyl)cyclotrisiloxane, or 2,2,4,4,6,6-tri(2-butene-1,4-diyl)cyclotrisiloxane which is a cyclic siloxane compound having a spiro structure; and the semiconductor electronic device is manufactured by disposing the electric insulating film therein. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an electrical insulating film for a semiconductor device, which is manufactured by using a cyclic siloxane compound having a spiro structure as a raw material for a film formation process by a plasma enhanced chemical vapor deposition (PECVD) method and has excellent mechanical strength.

  2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane (compound 1), 2,2,4,4 which is a cyclic siloxane compound having a spiro structure according to the present invention , 6,6,8,8-tetra (butane-1,4-diyl) cyclotetrasiloxane (compound 2), 2,2,4,4,6,6-tri (pentane-1,5-diyl) cyclo Trisiloxane (compound 3) and 2,2,4,4,6,6-tri (2-butene-1,4-diyl) cyclotrisiloxane (compound 4) are both known compounds. Non-patent document 1 can be given as a synthesis example of 3. Moreover, although there is no example which synthesize | combined and isolated the compound 4, it is described in the nonpatent literature 2 that it exists as one component in a product mixture.

  An insulating film in which an organosilicon compound is deposited on a substrate by a PECVD method or the like is generally not clear in chemical structure, but is sometimes called a SiOCH film because of its constituent elements. Examples of producing an insulating film by PECVD using a cyclic siloxane compound as a raw material include Patent Documents 1 and 2 and Non-Patent Document 3. These indicate that an insulating film having a relatively low dielectric constant can be produced by using a cyclotrisiloxane derivative or a cyclotetrasiloxane derivative.

  However, there are no examples of proposals for materials using the compounds 1 to 4 and reports of material properties, and none of the examples in which the compounds 1 to 4 are supplied as raw materials for the PECVD method to produce an electrical insulating film. Patent Document 2 relates to producing an electrical insulating film using a cyclic siloxane derivative as a raw material for PECVD, and 2,2- (butane-1,4-diyl) is used as a cyclic siloxane derivative having a spiro structure. -4,4,6,6-tetramethylcyclotrisiloxane and 2,2- (butane-1,4-diyl) -4,6-dimethylcyclotrisiloxane are described. However, there is no film formation example of these compounds, and therefore the physical properties of the film are not described.

JP 2007-96237 A US Pat. No. 6,572,923

Francis J. et al. Bajer et al., Journal of Organic Chemistry, 28 (7), 1941 (1963). A. N. Polivanov et al., Zhurnal Obshchei Kimii, 48 (7), 1662 (1978) Alfred Grill, Journal of Applied Physics, 93 (3), 1785 (2003)

  An object of the present invention is to obtain a film by using a cyclic siloxane having a spiro structure as a raw material and subjecting it to a PECVD process. It is another object of the present invention to provide an electrical insulating film made of this film and a semiconductor electronic device in which this electrical insulating film is arranged.

  As a result of intensive studies to solve the above-mentioned problems, the present inventors have found that the cyclic siloxane compound having a spiro structure is a compound having performance capable of solving the above-mentioned problems, and have completed the present invention. .

  That is, the present invention relates to 2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane (Compound 1), 2,2,4,4,6,6,8,8. -Tetra (butane-1,4-diyl) cyclotetrasiloxane (compound 2), 2,2,4,4,6,6-tri (pentane-1,5-diyl) cyclotrisiloxane (compound 3), or A film formed by PECVD using 2,2,4,4,6,6-tri (2-butene-1,4-diyl) cyclotrisiloxane (compound 4) as a raw material. is there. The present invention also provides an electrical insulating film comprising the above-described film. Furthermore, the present invention is a semiconductor electronic device comprising the above-described electrical insulating film. The present invention is also a method for producing a film, characterized in that the film is formed by PECVD using compounds 1, 2, 3 or 4 as raw materials. The present invention is described in further detail below.

  The chemical structure of a film formed by PECVD using compounds 1 to 4 as a raw material is not clear. However, the film has the characteristics that the elastic modulus is approximately 10 GPa or more and the hardness is approximately 1 GPa or more, and is excellent in mechanical strength. In addition, since the relative dielectric constant of the film is a relatively low value of 2.5 or less, it can be used as an electrical insulating film. Therefore, the film can be used for a semiconductor electronic device as an electrical insulating film.

  A method for forming a film by PECVD using compounds 1 to 4 as a raw material is not particularly limited, and a normal PECVD method can be appropriately used.

  For example, since all of compounds 1 to 4 are solid at room temperature, they can be introduced into a reduced pressure system of the plasma enhanced chemical vapor deposition method as a solid, and sublimated in the system to be used as a gas for the PECVD process. Further, by heating the source gas supply system to the melting point or higher of the compounds 1 to 4, the compounds 1 to 4 can be liquidized and then vaporized and introduced into the source gas supply system. Further, the compounds 1 to 4 can be liquefied by mixing the liquid cyclic siloxane compound disclosed in, for example, Patent Document 1 and Non-Patent Document 3 and vaporized to be introduced into the source gas supply system. . The mixing ratio is not particularly limited as long as it is uniformly compatible. For example, the cyclic siloxane compound disclosed in Patent Document 1 and the cyclic siloxane compound having a spiro structure may be mixed in a weight percentage of 99: 1 to 10:90. Is possible.

  By using the cyclic siloxane compound having a spiro structure of the present invention as a raw material for the PECVD process, an electrical insulation film having excellent mechanical strength can be produced, and this electrical insulation film is suitably used for semiconductor electronic devices.

It is the schematic of the PECVD film-forming apparatus used in Examples-1-10 and Comparative Examples-1-4.

  EXAMPLES Hereinafter, although a reference example, an Example, and a comparative example are given and this invention is demonstrated further in detail, this invention is not limited to these.

  1,1-dichloro-1-silacyclopentane and 1,1-dichloro-1-silacyclohexane as raw materials for producing compounds 1 to 3 were synthesized with reference to known literature (R. West, Journal of the American Chemical Society, 76, 6012 (1954)). Further, 1,1-dichloro-1-silacyclo-3-butene which is a raw material for synthesizing compound 4 was also synthesized with reference to known literature (R. Damrauer et al., Journal of Organometallic Chemistry, 391, 7 (1990)). .).

Reference Example-1
71.3 g (2.93 mol) of magnesium was placed in a 2 L three-necked flask equipped with a stirrer, a Dimroth condenser and a 300 mL dropping funnel, dried under vacuum, and replaced with argon. To this was added 500 mL of dry diethyl ether, and a solution of 309.1 g (1.432 mol) of 1,4-dibromobutane in 500 mL of diethyl ether was gradually added from a dropping funnel to prepare a diglynar reagent. Separately, 1000 mL of diethyl ether and 256.3 g (1.509 mol) of silicon tetrachloride were placed in a 3 L three-necked flask equipped with a stirrer, a Dimroth condenser, and a 300 mL dropping funnel. The reagent was gradually added dropwise over 2 hours. This was stirred at room temperature for 12 hours to complete the reaction. The obtained reaction mixture was filtered, concentrated, and then distilled under reduced pressure (boiling point: 70 ° C./10 Pa) to give 140.4 g of 1,1-dichloro-1-silacyclopentane as a colorless liquid (yield: 63. 23%, GC purity: 99%). EI-MS (70 eV), m / z (relative intensity): 154 ([M] ⁺ , 18), 126 (100), 98 (22).

Reference example-2
In a 200 mL three-necked flask equipped with a Dimroth condenser, a magnetic stirrer, and a 200 mL dropping funnel, 8.5 g (0.35 mol) of ground magnesium was placed and replaced with argon. Into this flask, 50 mL of dehydrated diethyl ether was slowly added, and a solution of 25.1 g (0.109 mol) of 1,5-dibromopentane in 200 mL of dehydrated diethyl ether was slowly added dropwise. After completion of the addition, the mixture was stirred for 12 hours and stirred for 1,5-pentanediyl. A digignard reagent was prepared. Separately, a 500 mL three-necked flask equipped with a Dimroth condenser, a magnetic stir bar and a 300 mL dropping funnel was replaced with argon, and 20.4 g (0.120 mol) of silicon tetrachloride and 100 mL of dehydrated diethyl ether were placed in advance. The digignard reagent was added dropwise from the dropping funnel over 2 hours, and this was stirred for 3 days. The precipitated magnesium salt is filtered, concentrated at normal pressure, and then distilled at normal pressure (boiling point 169 ° C.), whereby 13.4 g of 1,1-dichloro-1-silacyclohexane as a colorless transparent liquid (yield: 72.6%, GC purity: 97%).

EI-MS (70 eV), m / z (relative intensity): 168 ([M] ⁺ , 49), 140 (100), 127 (63), 112 (57). ¹ H-NMR, δ (250 MHz, CDCl ₃ ): 1.18 (t, 4H, J = 6.5 Hz), 1.41-1.53 (m, 2H), 1.70-1.88 (m , 4H). IR (neat, cm ⁻¹ ): 2927, 2860, 1446, 1392, 1178, 989, 908, 771, 687.

Reference example-3
A 1 L three-necked flask containing a stirrer, a Dimroth condenser, and a 300 mL dropping funnel was replaced with argon. It was. To this mixture, 41.6 g (333 mmol) of cis-1,4-dichloro-2-butene, 50.0 g (369 mmol) of trichlorosilane and 30 mL of diethyl ether were slowly added dropwise over 4 hours. This was stirred for 24 hours to complete the reaction. The obtained reaction mixture was filtered and concentrated, and then distilled under reduced pressure (boiling point: 75 ° C./10 Pa) to give 56.9 g of 1-trichlorosilyl-4-chloro-2-butene as a colorless liquid (yield: 76 3%, 4/1 mixture of cis- and trans-isomers). EI-MS (70 eV), m / z (relative intensity): 222 ([M] ⁺ , 12), 187 (81), 133 (90), 54 (100).

Magnesium 18.4 g (757 mmol) was placed in a 500 mL three-necked flask equipped with a stirrer, a Dimroth condenser, and a 200 mL dropping funnel, dried under vacuum, and then replaced with argon. 200 mL of diethyl ether was placed in a reaction vessel, and a solution of 56.9 g (254 mmol) of 1-trichlorosilyl-4-chloro-2-butene in 50 mL of diethyl ether was slowly added dropwise from a dropping funnel. This was stirred for 12 hours to complete the reaction. The obtained reaction mixture was concentrated after filtration, and then distilled (boiling point: 84 ° C./50 Pa) to obtain 19.5 g of 1,1-dichloro-1-silacyclo-3-butene as a colorless liquid (yield: 50 0.1%, GC purity: 99%). EI-MS (70 eV), m / z (relative intensity): 152 ([M] ⁺ , 29), 116 (100), 54 (69).

Reference example-4
A 1000 mL three-necked flask equipped with a Dimroth condenser, dropping funnel, and magnetic stir bar was replaced with argon, and 1,1-dichloro-1-silacyclopentane 42.5 g (274 mmol) and triethylamine 84.0 g (830 mmol) were placed in the flask. ), And 500 mL of dehydrated diethyl ether. A solution of 37.9 g (823 mmol) of absolute ethanol in 200 mL of dehydrated diethyl ether was added dropwise from the dropping funnel over 2 hours, followed by stirring for 14 hours. The precipitated triethylamine hydrochloride was filtered off and the filtrate was concentrated. This was distilled under reduced pressure (boiling point 131 ° C./30.8 kPa) to give 30.3 g of 1,1-diethoxy-1-silacyclopentane as a colorless liquid (yield: 63.4%, GC purity: 95%) Obtained. EI-MS (70 eV), m / z (relative intensity): 174 (28), 146 (87), 131 (36), 118 (100), 103 (46). IR (neat, cm ⁻¹ ): 2972, 2925, 2858, 1250, 1105, 1074, 1045, 951, 808, 762, 690.

Reference Example-5
200 mL of dehydrated toluene and 19.9 g (255 mmol) of dehydrated dimethyl sulfoxide were placed in a 200 mL two-necked flask purged with argon, and 15.8 g (102 mmol) of 1,1-dichloro-1-silacyclopentane was added over 1 hour using a syringe. And slowly dropped. The reaction mixture was stirred for 3 hours and transferred to a separatory funnel to extract and remove water-soluble material. After concentration, this was distilled using a Kugelrohr to produce 2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane (Compound 1, distillation temperature: 110 ° C. / 0.5 Pa), 2,2,4,4,6,6,8,8-tetra (butane-1,4-diyl) cyclotetrasiloxane (compound 2, distillation temperature: 140 ° C./0.4 Pa), respectively. 4.68 g (yield: 45.9%, GC purity: 98%) and 2.00 g (yield: 19.6%, GC purity 95%) were obtained.

Compound 1, melting point: 206 ° C. EI-MS (70 eV), m / z (relative intensity): 300 ([M] ⁺ , 18), 272 (100), 244 (69), 216 (37). IR (cm < ^-1 >): 2937,2858,1248,1068,1007,829,735,698. ¹ H-NMR, δ (ppm, CDCl ₃ ): 0.54 (m, 12H), 1.60 (m, 12H).

Compound 2, melting point: 116 [deg.] C. EI-MS (70 eV), m / z (relative intensity): 400 ([M] ⁺ , 12), 371 (18), 351 (16), 343 (100). IR (cm < ^-1 >): 2926, 2854, 1250, 1053 (br), 1013, 854, 818, 700, 671. ¹ H-NMR δ (ppm, CDCl ₃ ): 0.48 (m, 16H), 1.57 (m, 16H).

Reference Example-6
A 500 mL three-necked flask equipped with a stirrer, a Liebig condenser, and a 100 mL dropping funnel was replaced with argon, and 28.6 g (0.351 mol) of zinc oxide was placed in the container. It was vacuum dried for 1 hour, and 300 mL of dehydrated ethyl acetate was added to form a slurry. To this, 50.0 g (0.322 mol) of 1,1-dichloro-1-silacyclopentane was slowly added dropwise over 30 minutes. The reaction was terminated for 4 hours, and disappearance of zinc oxide was confirmed to complete the reaction. The reaction mixture was transferred to a separatory funnel, 300 mL of hexane was added, and water-soluble by-products were extracted and removed with water. When the hexane layer was concentrated using a rotary evaporator, 5.83 g of a cyclotrisiloxane component was precipitated. The remaining viscous material was distilled using a Kugelrohr to roughly separate cyclotrisiloxane and cyclotetrasiloxane. The cyclotrisiloxane component was collected and recrystallized from hexane to obtain 5.63 g of 2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane (yield: 17. 4%, GC purity 99%). Further, by recrystallizing the cyclotetrasiloxane component from a methanol / tetrahydrofuran mixed solvent (20/3 volume ratio), 2,2,4,4,6,6,8,8-tetra (butane-1,4- 5.64 g (yield: 17.5%, GC purity 99%) of diyl) cyclotetrasiloxane was obtained.

Reference Example-7
In a 100 mL two-necked flask equipped with a Dimroth condenser and a stir bar, 1 mL of 35% concentrated hydrochloric acid, 50 mL of diethyl ether, 1.8 g of water, and 3.5 g (20 mmol) of 1,1-diethoxy-1-silacyclopentane were placed. The mixture was reacted for 30 hours under reflux with stirring. The reaction mixture was transferred to a separatory funnel and the organic layer was washed 3 times with water. After concentration, this was distilled under reduced pressure with Kugelrohr to obtain 508 mg (yield: 25%) of 2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane, and 2 , 2,4,4,6,6,8,8-tetra (butane-1,4-diyl) cyclotetrasiloxane (262 mg, yield: 13%), all obtained as a colorless solid.

Reference Example-8
In a 100 mL two-necked flask equipped with a Dimroth condenser and a stirring bar, 518 mg of potassium hydroxide, 1.8 g of water, 50 mL of ethanol, and 3.5 g (20 mmol) of 1,1-diethoxy-1-silacyclopentane were placed under reflux. For 30 hours. The reaction mixture was concentrated and 50 mL of hexane was added. The hexane soluble component was transferred to a separatory funnel, and the organic layer was washed three times with water. This was concentrated and then distilled under reduced pressure with Kugelrohr to give 698 mg (yield) of 2,2,4,4,6,6,8,8-tetra (butane-1,4-diyl) cyclotetrasiloxane as a colorless solid. : 35%).

Reference Example-9
A 100 mL two-necked flask equipped with a Liebig condenser and a magnetic stirring bar was replaced with argon, and 50 mL of diethyl ether, 4.01 g (39.6 mmol) of triethylamine, 3.01 g of 1,1-dichloro-1-silacyclopentane (19. 4 mmol), and tridecane (internal standard). To this mixture, a solution of 365 mg (20.3 mmol) of water in 28 mL of tetrahydrofuran was slowly added dropwise and stirred for 14 hours. The GC yield of the reaction mixture was determined by the internal standard method. As a result, 2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane was 15.5%, The yield of 4,4,6,6,8,8-tetra (butane-1,4-diyl) cyclotetrasiloxane was 9.4%.

Reference Example-10
A 500 mL 3-neck flask equipped with a magnetic stir bar and a 100 mL dropping funnel was replaced with argon. The flask was charged with 300 mL of dehydrated toluene and 40.1 g (0.513 mol) of dehydrated dimethyl sulfoxide, and slowly added 56 mL of dehydrated toluene in 30.0 g (0.177 mol) of 1,1-dichloro-1-silacyclohexane from the dropping funnel. The solution was added dropwise and stirred for 14 hours after the completion of the addition. The reaction mixture was transferred to a separatory funnel, washed 5 times with water to remove water-soluble impurities, and the organic layer was dried over anhydrous calcium chloride. After concentration, the mixture obtained by passing through a silica gel column (φ20 × 100 mm, eluent: hexane) was distilled under reduced pressure using a Kugelrohr to obtain a crude cyclotrisiloxane fraction (distillation temperature: 110 ° C./50 Pa) and a crude cyclotetrasiloxane fraction (distillation temperature: 140 ° C./50 Pa). Each solid fraction is washed with methanol, and further distilled under reduced pressure using a Kugelrohr distillation apparatus to obtain the desired 2,2,4,4,6,6-tri (pentane-1,5-diyl) cyclotrimethyl. 3.0 g (yield: 15%, GC purity: 98%) of siloxane (compound 3) was obtained as a colorless solid.

Melting point: 94 ° C. EI-MS (70 eV), m / z (relative intensity): 342 ([M] ⁺ , 69), 314 (68), 299 (100), 286 (95), 273 (29), 245 (38). ¹ H-NMR δ (ppm, CDCl ₃ ): 0.639 (t, 12H, J = 6.8 Hz), 1.32 to 1.42 (m, 6H), 1.67 to 1.77 (m, 12H). IR (neat, cm ⁻¹ ): 2910, 2854, 1446, 1292, 1198, 1178, 1012, 995, 904, 775, 627.

Reference Example-11
35 mL of dehydrated toluene and 8.15 g (104 mmol) of dehydrated dimethyl sulfoxide were placed in a 100 mL two-necked flask purged with argon, and 5.25 g (34.3 mmol) of 1,1-dichloro-1-silacyclo-3-pentene was used using a syringe. Was slowly added dropwise over 1 hour. The reaction mixture was stirred for 3 hours and transferred to a separatory funnel to extract and remove water-soluble material. The organic layer is concentrated and then distilled using a Kugelrohr (distillation temperature 95 ° C./1 Pa) to give 2,2,4,4,6,6-tri (2-butene-1,4-diyl) cyclotri 0.97 g (yield: 29%, GC purity: 99%) of siloxane (compound 4) was obtained. Melting point: 185.8 ° C. EI-MS (70 eV), m / z (relative intensity): 294 ([M] ⁺ , 100), 266 (33), 240 (63). ¹ H-NMR δ (ppm, CDCl ₃ ): 1.286 (d, 12H, J = 1.1 Hz), 5.914 (t, 6H, J = 1.1 Hz).

Examples-1 to 10 and Comparative Examples-1 to 4
Film formation Using a parallel plate capacitively coupled PECVD apparatus in which counter electrodes are vertically arranged at intervals of 50 mm as shown in FIG. 1, a silicon wafer used as a substrate is attached to one electrode, and a cyclic siloxane compound is used as a raw material in the chamber. 1 g was installed, the pressure was reduced with a vacuum pump, and the formation of the SiOCH film was examined by a method of supplying the raw material only with the vapor pressure of the raw material. The inside temperature of the chamber was kept at a predetermined temperature by heating the heater. An RF power output with a power frequency of 13.56 MHz was set to a predetermined value, and film formation was performed for a predetermined time.

Measurement of film thickness and relative dielectric constant The film thickness and refractive index of the formed SiOCH film were measured using an ellipsometer (model: MEL-30S) manufactured by JASCO Corporation, and the dielectric constant was obtained by squaring the refractive index. Rate.

Elastic modulus and hardness measurement Elastic modulus and hardness were measured by a nanoindentation method using TRIBOSCOPE manufactured by Hysitron. A calibration curve was prepared using a Berkovich type indenter and fused quartz as a reference sample. The measurement was performed by setting the indentation depth to 10% with respect to the thickness of the SiOCH film.

  Table 1 shows the film forming conditions shown in the above method, the film thickness, the elastic modulus, the hardness, and the relative dielectric constant of the SiOCH film produced. Note that the film was formed at a chamber temperature of 55 ° C. unless otherwise indicated.

本発明によれば、比誘電率２．５以下の比較的低い値を示し、且つ弾性率が概ね１０ＧＰａ以上、硬度が概ね１ＧＰａ以上である機械的強度に優れた電気絶縁膜を製造することが可能である。

According to the present invention, it is possible to produce an electrical insulating film having a relatively low value of a relative dielectric constant of 2.5 or less, an elastic modulus of approximately 10 GPa or more, and a hardness of approximately 1 GPa or more and excellent mechanical strength. Is possible.

1. PECVD chamber Substrate 3. Upper electrode 4. Lower electrode 5. Raw material glass container 6. Raw material 7. Vacuum pump 8. 8. Matching circuit RF power supply 10. Earth 11. heater

Claims (4)

2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane, 2,2,4,4,6,6,8,8-tetra (butane-1,4- Diyl) cyclotetrasiloxane, 2,2,4,4,6,6-tri (pentane-1,5-diyl) cyclotrisiloxane, or 2,2,4,4,6,6-tri (2-butene) A film characterized by being formed by plasma enhanced chemical vapor deposition using -1,4-diyl) cyclotrisiloxane as a raw material. 2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane, 2,2,4,4,6,6,8,8-tetra (butane-1,4- Diyl) cyclotetrasiloxane, 2,2,4,4,6,6-tri (pentane-1,5-diyl) cyclotrisiloxane, or 2,2,4,4,6,6-tri (2-butene) An electrically insulating film composed of a film formed by plasma enhanced chemical vapor deposition using -1,4-diyl) cyclotrisiloxane as a raw material. 2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane, 2,2,4,4,6,6,8,8-tetra (butane-1,4- Diyl) cyclotetrasiloxane, 2,2,4,4,6,6-tri (pentane-1,5-diyl) cyclotrisiloxane, or 2,2,4,4,6,6-tri (2-butene) A semiconductor electronic device comprising an electrically insulating film made of a film formed by a plasma enhanced chemical vapor deposition method using 1,4-diyl) cyclotrisiloxane as a raw material. 2,2,4,4,6,6-tri (butane-1,4-diyl) cyclotrisiloxane, 2,2,4,4,6,6,8,8-tetra (butane-1,4- Diyl) cyclotetrasiloxane, 2,2,4,4,6,6-tri (pentane-1,5-diyl) cyclotrisiloxane, or 2,2,4,4,6,6-tri (2-butene) A process for producing a film, characterized in that a film is formed by plasma enhanced chemical vapor deposition using -1,4-diyl) cyclotrisiloxane as a raw material.

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