JP2011029252A - Dry etching device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress contamination inside a processing chamber to thereby improve uniformity of etching as much as possible. <P>SOLUTION: A dry etching device 50a includes the processing chamber 30 storing a workpiece 3, on which a material to be etched 2 is arranged, and a substrate holding unit 10a which is disposed inside the processing chamber 30 and holds the workpiece 3 on a surface. The device etches the material to be etched 2 by an etching species E generated from plasma P inside the processing chamber 30. A peripheral member 9a which is constituted of the same material as the material to be etched 2 and is employed for consuming the etching species E is arranged in the periphery of a region where the workpiece 3 of the substrate holding unit 10a is held. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a dry etching apparatus.

  In the manufacture of electronic devices such as liquid crystal display panels, for example, dry etching is widely used as a means for forming a fine element pattern.

  In recent years, in the manufacture of liquid crystal display panels, the mother glass to be used tends to increase in order to improve the production efficiency. Therefore, in the dry etching apparatus, the uniformity of etching within the substrate surface has become important. .

  For example, in Patent Document 1, when a substrate to be processed having a mask made of a photoresist film is placed on a support plate and a reactive dry etching is performed on the substrate to be processed, a resin is placed around the substrate to be processed. A dry etching method in which the material is exposed is disclosed. Patent Document 1 describes that according to this dry etching method, the radical concentration is remarkably uniform over the entire area of the substrate to be processed, and the difference in the etching rate between the central portion and the peripheral portion is remarkably reduced. Has been.

JP 58-56338 A

  By the way, in the dry etching method disclosed in Patent Document 1, radicals in the processing chamber are consumed not only on the substrate to be processed but also in a reaction with the resin material exposed around the substrate to be processed. Therefore, although the uniformity of etching within the substrate surface can be improved, carbon-based impurities generated by the reaction between the resin material and radicals are likely to be mixed into the etching gas plasma, so that the inside of the processing chamber is contaminated. There is a fear.

  The present invention has been made in view of such a point, and an object of the present invention is to suppress the contamination inside the processing chamber and improve the uniformity of etching as much as possible.

  In order to achieve the above object, according to the present invention, a peripheral member that is made of the same material as the material to be etched and that consumes the etching species is provided around the region of the substrate holding portion that holds the substrate to be processed. It is a thing.

  Specifically, a dry etching apparatus according to the present invention is provided in a processing chamber for accommodating a substrate to be processed provided with a material to be etched, and in the processing chamber for holding the substrate to be processed on the surface. A dry etching apparatus that etches the material to be etched with an etching species generated from plasma inside the processing chamber, and surrounds a region of the substrate holding portion that holds the substrate to be processed. Further, it is characterized in that it is made of the same material as the material to be etched and is provided with a peripheral member for consuming the etching species.

  According to the above configuration, the surrounding member (for consuming the etching species) of the same material as the material to be etched is provided around the region of the substrate holding unit that holds the substrate to be processed in the processing chamber. Therefore, when etching the etching target material of the substrate to be processed by the etching species generated from the plasma inside the processing chamber, the etching species generated from the plasma is not only applied to the etching target material of the processing substrate. Also, the surrounding members are consumed in response. For this reason, an increase in the number of etching species around the substrate to be processed is suppressed, so that variation in the concentration of the etching species is reduced over the entire region of the substrate to be processed, and etching uniformity is increased. Further, since the peripheral member is the same material as the material to be etched, the product generated by the reaction between the etching species and the peripheral member is the same as the product generated by the reaction between the etching species and the material to be etched on the substrate to be processed. Thus, contamination inside the processing chamber is suppressed. Therefore, it is possible to suppress the contamination inside the processing chamber and improve the etching uniformity as much as possible.

  The peripheral member may be provided so as to fill a concave portion formed on the surface of the substrate holding portion.

  According to said structure, since the surrounding member is provided so that the recessed part of the surface of a board | substrate holding part may be filled, the surface of a board | substrate holding part becomes flat. Therefore, the remaining of particles on the surface of the substrate holding part is suppressed. Further, since the surface of the substrate holding part becomes flat, the air flow of the etching species becomes faster and the etching rate becomes higher. Furthermore, since the surface of the substrate holding part becomes flat, it becomes easy to install the substrate to be processed on the surface of the substrate holding part.

  The peripheral member may be provided also in an inner peripheral portion of a region of the substrate holding portion that holds the substrate to be processed.

  According to the above configuration, since the peripheral member is also provided on the inner peripheral portion of the region of the substrate holding unit that holds the substrate to be processed, even if the position of the substrate to be processed is slightly shifted on the surface of the substrate holding unit. A peripheral member for consuming the etching species can be disposed around the substrate to be processed.

  The peripheral member may be provided in a frame shape so as to be divided into a plurality of parts along a circumferential direction of a region of the substrate holding unit that holds the target substrate.

  According to said structure, since the surrounding member is provided in the frame shape and can be divided | segmented into multiple along the circumferential direction, the maintenance and replacement | exchange of a surrounding member become easy.

  The peripheral member may be erected on the surface of the substrate holding part.

  According to said structure, since the surrounding member is standingly arranged on the surface of the board | substrate holding | maintenance part, the airflow of an etching seed | species becomes slow and the uniformity of etching becomes higher.

  The peripheral member may be a silicon substrate.

  According to the above configuration, since the peripheral member is a silicon substrate, when the material to be etched is a silicon-based material such as amorphous silicon or polysilicon, the effects of the present invention are specifically exhibited. .

  The peripheral member may be a silicon sprayed film provided on a ceramic surface.

  According to the above configuration, since the peripheral member is a silicon sprayed film provided on the surface of the ceramic, the cost of the apparatus can be reduced as compared with the case where the peripheral member made of a silicon substrate is used.

  The surrounding member may be a quartz substrate.

  According to said structure, since a surrounding member is a quartz substrate, when the to-be-etched material is oxide film type materials, such as a silicon oxide film, the effect of this invention is specifically show | played.

  The substrate holding part is a first electrode, and a second electrode is provided inside the processing chamber so as to face the first electrode, and the plasma is transmitted between the first electrode and the second electrode. You may be comprised so that it may generate | occur | produce.

  According to the above configuration, in order to generate plasma inside the processing chamber, the first electrode and the second electrode are disposed so as to face each other. Constructed.

  According to the present invention, since the peripheral member for consuming the etching species is provided around the region of the substrate holding unit that holds the target substrate, the peripheral member for consuming the etching species is provided. Etching uniformity can be enhanced as much as possible by suppressing internal contamination.

1 is an apparatus schematic diagram of a dry etching apparatus 50a according to Embodiment 1. FIG. It is a top view of the surrounding member 9a which comprises the dry etching apparatus 50a. It is the apparatus schematic of the dry etching apparatus 50b which concerns on Embodiment 2. FIG. FIG. 6 is an apparatus schematic diagram of a dry etching apparatus 50c according to Embodiment 3.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments.

Embodiment 1 of the Invention
1 and 2 show a first embodiment of a dry etching apparatus according to the present invention. Specifically, FIG. 1 is an apparatus schematic diagram schematically showing the dry etching apparatus 50a of the present embodiment, and FIG. 2 is a plan view of a peripheral member 9a constituting the dry etching apparatus 50a.

  As shown in FIG. 1, the dry etching apparatus 50 a includes a processing chamber 30 for accommodating the substrate to be processed 3, a first electrode 10 a provided as a substrate holding portion inside the processing chamber 30, A second electrode 20 provided so as to face the first electrode 10a inside, a high-frequency power source 40 connected to the first electrode 10a, and a gas introduction system for introducing an etching gas or the like into the processing chamber 30 (Not shown) and an exhaust system (not shown) for keeping the internal pressure of the processing chamber 30 constant, and an etching gas supplied from the gas introduction system between the first electrode 10a and the second electrode 20 The plasma P is generated, and the substrate 3 to be processed is etched by the etching species E generated from the plasma P. Note that the second electrode 20, the processing chamber 30, and the high-frequency power source 40 are grounded.

  The first electrode 10a, the second electrode 20, and the processing chamber 30 are made of, for example, stainless steel having high corrosion resistance.

  As shown in FIG. 1, a recess C is provided in a frame shape on the surface of the first electrode 10a. And the surrounding member 9a is engage | inserted by the recessed part C of the 1st electrode 10a. Here, the 1st electrode 10a is comprised so that the to-be-processed substrate 3 may be hold | maintained on the surface by an electrostatic chuck. The first electrode 10a is connected to a cooling device (not shown) such as a water-cooled chiller, and is configured to be temperature-controllable.

  As shown in FIG. 2, the peripheral member 9 a is provided in a frame shape as a whole. For example, the peripheral member 9 a is provided so as to be divided into four along the circumferential direction by being separated at each corner. Here, as shown in FIGS. 1 and 2, the peripheral member 9 a is designed such that the outer peripheral portion of the surface is exposed from the substrate 3 to be processed when the substrate 3 is held. Further, the peripheral member 9a consumes an etching species E of active radicals or active ions, so that the peripheral member 9a fits a material to be etched 2 of the substrate 3 to be described later, for example, a silicon substrate having a thickness of about 5 mm to 10 mm, It is composed of a quartz substrate or the like. Specifically, when the material to be etched 2 is a silicon-based material such as amorphous silicon or polysilicon, the peripheral member 9a is constituted by a silicon substrate, and the material to be etched 2 is an oxide film-based material such as a silicon oxide film. In this case, the peripheral member 9a is constituted by a quartz substrate.

  Next, a dry etching method using the dry etching apparatus 50a having the above configuration will be described. Here, as shown in FIG. 1, the substrate 3 to be processed is, for example, an insulating substrate 1 such as a 2800 mm long × 3100 mm wide glass substrate, and a polysilicon film or a silicon oxide film formed on the insulating substrate 1. The material 2 to be etched and a resist pattern (not shown) provided on the material 2 to be etched are provided. The material to be etched 2 and the surrounding member 9a are preferably made of the same material, but may be similar materials. Hereinafter, an etching method in the case where a polysilicon film is used as the material to be etched 2 and a silicon substrate is used as the peripheral member 9a will be exemplified.

  First, after the substrate 3 to be processed is carried into the processing chamber 30, the substrate 3 to be processed is held on the first electrode 10a.

Subsequently, by supplying high-frequency power from the high-frequency power source 40 to the first electrode 10a and supplying an etching gas such as CF ₄ gas into the processing chamber 30, for example, the first electrode 10a and the second electrode 10a. A CF ₄ plasma P is generated during 20 to generate etching species E such as active ions and active radicals from the CF ₄ plasma P. At this time, the silicon atoms on the surface of the material to be etched 2 on the substrate to be processed 3 react with the etching species E incident on the surface of the material to be etched 2, whereby the material to be etched 2 on the substrate to be processed 3 reacts. Etching proceeds. At the same time, around the substrate 3 to be processed on the first electrode 10a, the silicon species on the surface of the peripheral member 9a react with the etching species E incident on the surface of the peripheral member 9a, so that the etching species E is consumed. The

  As described above, the material to be etched 2 exposed from the resist pattern on the substrate to be processed 3 can be etched.

  As described above, according to the dry etching apparatus 50a of the present embodiment, the same material as the material to be etched 2 is formed around the region of the first electrode 10a that holds the substrate 3 to be processed inside the processing chamber 30. Since the peripheral member 9 a is provided, when the etching target material 2 of the substrate 3 to be processed is etched by the etching species E generated from the plasma P inside the processing chamber 30, the etching species E generated from the plasma P is In addition to the material 2 to be etched of the substrate 3 to be processed, it is consumed in response to the surrounding member 9a. Therefore, an increase in the etching species E around the substrate 3 to be processed can be suppressed, so that the variation in the concentration of the etching species E can be reduced in the entire area of the substrate 3 to be processed, and the etching uniformity can be improved. . Further, since the peripheral member 9 a is the same material as the material to be etched 2, a product generated by a reaction between the etching species E and the peripheral member 9 a is a reaction between the etching species E and the material to be etched 2 of the substrate 3 to be processed. It becomes the same as the product produced | generated by, and can suppress the contamination inside the processing chamber 30. FIG. Therefore, contamination inside the processing chamber 30 can be suppressed and etching uniformity can be enhanced as much as possible.

  Moreover, according to the dry etching apparatus 50a of this embodiment, since the surrounding member 9a is provided so as to fill the concave portion C on the surface of the first electrode 10a, the surface of the first electrode 10a becomes flat. Therefore, it is possible to suppress the remaining of particles on the surface of the first electrode 10a. Further, since the surface of the first electrode 10a is flat, the air flow of the etching species is increased and the etching rate can be increased. Furthermore, since the surface of the first electrode 10a is flat, the substrate 3 to be processed can be easily installed on the surface of the first electrode 10a.

  Moreover, according to the dry etching apparatus 50a of this embodiment, since the surrounding member 9a is also provided in the inner peripheral part of the area | region which hold | maintains the to-be-processed substrate 3 of the 1st electrode 10a, on the surface of the 1st electrode 10a Even if the position of the substrate 3 to be processed is slightly shifted, the peripheral member 9a for consuming the etching species E can be disposed around the substrate 3 to be processed.

  Further, according to the dry etching apparatus 50a of the present embodiment, since the peripheral member 9a is provided in a frame shape and can be divided into a plurality of parts along the circumferential direction, the maintenance and replacement of the peripheral member 9a is facilitated. be able to.

<< Embodiment 2 of the Invention >>
FIG. 3 is an apparatus schematic diagram schematically showing the dry etching apparatus 50b of the present embodiment. In the following embodiments, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the dry etching apparatus 50a of the first embodiment, the peripheral member 9a is a silicon substrate or a quartz substrate. However, in the dry etching apparatus 50b of the present embodiment, the peripheral member 9b is a ceramic substrate 8 having a thickness of about 5 mm to 10 mm. This is a silicon sprayed film having a film thickness of about 400 μm to 500 μm provided on the surface, and the other configuration is substantially the same as in the first embodiment.

  According to the dry etching apparatus 50b of the present embodiment, as in the first embodiment, contamination inside the processing chamber 30 can be suppressed to improve etching uniformity as much as possible, and the peripheral member 9b. Since this is a silicon sprayed film provided on the surface of the ceramic substrate 8, for example, the cost of the apparatus can be reduced as compared with the case of using a peripheral member made of a silicon substrate.

<< Embodiment 3 of the Invention >>
FIG. 4 is an apparatus schematic diagram schematically showing the dry etching apparatus 50c of the present embodiment.

  In the dry etching apparatus 50a of the first embodiment and the dry etching apparatus 50b of the second embodiment, the peripheral members 9a and 9b are provided so as to fill the recess C of the first electrode 10a, respectively. In the device 50c, the peripheral member 9c is provided so as to stand upright on the surface of the first electrode 10c, and other configurations are substantially the same as those in the first embodiment. Here, the peripheral member 9c consumes active radicals or active ion etching species E, so as to fit the material to be etched 2 of the substrate 3 to be processed, for example, a silicon substrate or a quartz substrate having a thickness of about 10 mm. Are provided in a frame shape. Moreover, the 1st electrode 10c is substantially the same as the 1st electrode 10a of the said Embodiment 1 except the point by which the recessed part is not formed in the surface.

  According to the dry etching apparatus 50c of the present embodiment, as in the first embodiment, contamination inside the processing chamber 30 can be suppressed to improve etching uniformity as much as possible, and the peripheral member 9c. Is standing on the surface of the first electrode 10c, the air flow of the etching species E is slowed, and the etching uniformity can be further improved.

  In each of the above embodiments, a parallel plate type dry etching apparatus has been exemplified, but the present invention can also be applied to other types of dry etching apparatuses such as a microwave plasma etching apparatus.

  As described above, the present invention can improve the uniformity of etching in the substrate surface, and thus is useful for a dry etching apparatus for manufacturing a liquid crystal display panel using a large-area mother glass.

C Concavity E Etching seed P Plasma 2 Material to be etched 3 Substrate 8 Ceramic substrate 9a, 9b Peripheral member 9c Peripheral member (sprayed film)
10a, 10c 1st electrode (substrate holding part)
20 Second electrode 30 Processing chambers 50a to 50c Dry etching apparatus

Claims (9)

A processing chamber for accommodating a substrate to be processed provided with an etching target material;
A substrate holding unit provided inside the processing chamber for holding the substrate to be processed on the surface;
A dry etching apparatus for etching the material to be etched by an etching species generated from plasma inside the processing chamber,
Dry etching characterized in that a peripheral member for consuming the etching species is provided around the region of the substrate holding portion for holding the substrate to be processed, which is made of the same material as the material to be etched. apparatus. The dry etching apparatus according to claim 1,
The dry etching apparatus according to claim 1, wherein the peripheral member is provided so as to fill a concave portion formed on a surface of the substrate holding portion. In the dry etching apparatus according to claim 2,
The dry etching apparatus according to claim 1, wherein the peripheral member is also provided in an inner peripheral portion of a region of the substrate holding portion that holds the substrate to be processed. In the dry etching apparatus according to claim 2 or 3,
The dry etching apparatus according to claim 1, wherein the peripheral member is provided in a frame shape so as to be divided into a plurality of parts along a circumferential direction of a region of the substrate holding unit that holds the target substrate. The dry etching apparatus according to claim 1,
The dry etching apparatus characterized in that the peripheral member is erected on the surface of the substrate holding part. In the dry etching apparatus according to any one of claims 1 to 5,
The dry etching apparatus characterized in that the peripheral member is a silicon substrate. In the dry etching apparatus according to any one of claims 1 to 5,
The dry etching apparatus according to claim 1, wherein the peripheral member is a silicon sprayed film provided on a ceramic surface. In the dry etching apparatus according to any one of claims 1 to 5,
The dry etching apparatus according to claim 1, wherein the peripheral member is a quartz substrate. The dry etching apparatus according to any one of claims 1 to 8,
The substrate holding part is a first electrode,
A second electrode is provided inside the processing chamber so as to face the first electrode,
A dry etching apparatus characterized in that the plasma is generated between the first electrode and the second electrode.

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