JP2011022818A - Touch panel and method for producing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a low-cost touch panel including a high-sensitivity photosensor and having a color imaging function, and to provide a method for producing the same. <P>SOLUTION: The touch panel includes a first substrate and a second substrate facing each other, and a backlight disposed on the second substrate side, and includes liquid crystal elements, transistors, and photodiodes between the first substrate and the second substrate. The transistors and the photodiodes are formed on the first substrate. The first substrate and the second substrate have transmittance, and a film thickness of the first substrate is 10-200 μm, preferably, 20-40 μm. The transistors and the photodiodes are formed on a support substrate, and thereafter are peeled and bonded onto the first substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

The present invention relates to a touch panel having a touch sensor and a manufacturing method thereof. In particular, the present invention relates to a touch panel in which pixels having touch sensors are arranged in a matrix and a manufacturing method thereof. Furthermore, the present invention relates to an electronic device having the touch panel.

In recent years, display devices equipped with touch sensors have attracted attention. A display device equipped with a touch sensor is called a touch panel or a touch screen (hereinafter simply referred to as “touch panel”). The touch sensor includes a resistance film method, a capacitance method, an optical method, and the like depending on a difference in operation principle. In either method, data can be input when the object to be detected is in contact with or close to the display device.

By providing a sensor for detecting light (also referred to as a “photo sensor”) as an optical touch sensor on the touch panel, the display screen also serves as an input area. As an example of a device having such an optical touch sensor, a display device having an image capturing function by disposing a contact area sensor that captures an image can be given (for example, see Patent Document 1). In a touch panel having an optical touch sensor, light is emitted from the touch panel. When an object to be detected exists at an arbitrary position on the touch panel, light in a region where the object to be detected exists is blocked by the object to be detected, and a part of the light is reflected. A pixel in the touch panel is provided with a photosensor (sometimes referred to as a “photoelectric conversion element”) that can detect light, and an area in which light is detected by detecting reflected light. It can be recognized that an object to be detected exists.

In addition, attempts have been made to provide a personal authentication function or the like to electronic devices such as mobile phones and portable information terminals (see, for example, Patent Document 2). For personal authentication, fingerprints, faces, handprints, palm prints, hand vein shapes, and the like are used. When the personal authentication function is provided in a part other than the display unit, the number of parts increases, which may increase the weight and price of the electronic device.

In addition, in a touch sensor system, a technique for selecting an image processing method for detecting the position of a fingertip according to the brightness of external light is known (see, for example, Patent Document 3).

JP 2001-292276 A JP 2002-033823 A JP 2007-183706 A

When a touch panel is used for an electronic device having a personal authentication function, it is necessary to collect an electric signal generated by detecting light by a photosensor provided in each pixel of the touch panel and perform image processing. In particular, in order to realize an electronic device having a high-resolution and high-speed personal authentication function, it is necessary to increase the sensitivity of the photosensor. Furthermore, in order to realize an advanced authentication function, it is necessary to collect data in color instead of monochrome. In addition, it is necessary to provide a touch panel at a low cost.

In view of the above problems, an object of one embodiment of the disclosed invention is to provide an inexpensive touch panel that includes a high-sensitivity photosensor and has a color imaging function and a manufacturing method thereof.

The touch panel according to one embodiment of the present invention includes a display element and a photosensor in each pixel, illuminates a backlight from the counter substrate side, and uses an object to be detected on the TFT substrate side. After forming on a substrate having an insulating surface, the thin film is formed by peeling.

According to the present invention, it is possible to provide an inexpensive touch panel that can perform color imaging with high resolution. In addition, an inexpensive touch panel manufacturing method capable of high-resolution color imaging can be provided.

Sectional drawing of a touch panel. The figure explaining the structure of a touch panel. The figure explaining the structure of a touch panel. The figure explaining the structure of a touch panel. Timing chart. 4A and 4B illustrate a method for manufacturing a touch panel. 4A and 4B illustrate a method for manufacturing a touch panel. 4A and 4B illustrate a method for manufacturing a touch panel. 4A and 4B illustrate a method for manufacturing a touch panel. The perspective view which shows the structure of a touch panel. The figure of the electronic device using a touch panel.

Hereinafter, embodiments will be described in detail with reference to the drawings. However, the following embodiments can be implemented in many different modes, and it is easy for those skilled in the art to change the modes and details in various ways without departing from the spirit and scope thereof. Understood. Therefore, the present invention is not construed as being limited to the description of the embodiments below. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
In this embodiment, a touch panel will be described with reference to FIGS.

FIG. 1 illustrates an example of a cross-sectional view of a touch panel according to one embodiment of the present invention. In the touch panel illustrated in FIG. 1, a photodiode 1002, a transistor 1003, a storage capacitor 1004, and a liquid crystal element 1005 are provided over a substrate (TFT substrate) 1001.

The photodiode 1002 and the storage capacitor 1004 can be formed together with the transistor 1003 in the process for manufacturing the transistor 1003. The photodiode 1002 is a lateral junction type pin diode, and the semiconductor film 1006 included in the photodiode 1002 includes a region having p-type conductivity (p layer), a region having i-type conductivity (i layer), and the like. And an n-type conductive region (n layer). Note that although the case where the photodiode 1002 is a pin diode is illustrated in this embodiment, the photodiode 1002 may be a pn diode. The lateral junction type pin junction or pn junction can be formed by adding an impurity imparting p-type conductivity and an impurity imparting n-type conductivity to specific regions of the semiconductor film 1006, respectively.

Further, by processing (patterning) one semiconductor film formed over the substrate (TFT substrate) 1001 into a desired shape by etching or the like, the island-shaped semiconductor film of the photodiode 1002 and the island-shaped semiconductor film of the transistor 1003 are processed. The semiconductor film and the semiconductor film can be formed together, and a process added to a normal panel manufacturing process is not necessary, so that cost can be reduced.

The liquid crystal element 1005 includes a pixel electrode 1007, a liquid crystal 1008, and a counter electrode 1009. The pixel electrode 1007 is formed over the substrate 1001 and is electrically connected to the transistor 1003, the storage capacitor 1004, and the conductive film 1010. The counter electrode 1009 is formed on a substrate (counter substrate) 1013, and a liquid crystal 1008 is sandwiched between the pixel electrode 1007 and the counter electrode 1009. Note that although a transistor used for the photosensor is not illustrated in this embodiment, the transistor is also formed over the substrate (TFT substrate) 1001 together with the transistor 1003 in the process of manufacturing the transistor 1003. Is possible.

A cell gap between the pixel electrode 1007 and the counter electrode 1009 can be controlled using a spacer 1016. In FIG. 1, the cell gap is controlled by using columnar spacers 1016 selectively formed by photolithography. However, by dispersing spherical spacers between the pixel electrode 1007 and the counter electrode 1009, the cell gap is controlled. Can also be controlled.

The liquid crystal 1008 is surrounded by a sealing material between the substrate (TFT substrate) 1001 and the substrate (counter substrate) 1013. The liquid crystal 1008 may be injected using a dispenser type (dropping type) or a dip type (pumping type).

The pixel electrode 1007 includes a light-transmitting conductive material such as indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), organic indium, organic tin, zinc oxide, or zinc oxide (ZnO). Indium zinc oxide (IZO (Indium Zinc Oxide)), zinc oxide (ZnO), zinc oxide containing gallium (Ga), tin oxide (SnO ₂ ), indium oxide containing tungsten oxide, indium containing tungsten oxide Zinc oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, or the like can be used.

In this embodiment, since the transmissive liquid crystal element 1005 is used as an example, the above-described light-transmitting conductive material can be used for the counter electrode 1009 as well as the pixel electrode 1007.

An alignment film 1011 is provided between the pixel electrode 1007 and the liquid crystal 1008, and an alignment film 1012 is provided between the counter electrode 1009 and the liquid crystal 1008. The alignment film 1011 and the alignment film 1012 can be formed using an organic resin such as polyimide or polyvinyl alcohol, and the surface is subjected to an alignment treatment such as rubbing for aligning liquid crystal molecules in a certain direction. Yes. The rubbing can be performed by rubbing the surface of the alignment film in a certain direction by rotating a roller wound with a cloth such as nylon while applying pressure to the alignment film. Note that the alignment film 1011 and the alignment film 1012 having alignment characteristics can be directly formed by an evaporation method using an inorganic material such as silicon oxide without performing an alignment treatment.

In addition, a color filter 1014 that can transmit light in a specific wavelength region is formed over a substrate (counter substrate) 1013 so as to overlap with the liquid crystal element 1005. The color filter 1014 can be selectively formed using photolithography after an organic resin such as an acrylic resin in which a pigment is dispersed is applied to the substrate 1013. Alternatively, a polyimide resin in which a pigment is dispersed can be applied over the substrate 1013 and then selectively formed by etching. Alternatively, the color filter 1014 can be selectively formed by using a droplet discharge method such as inkjet.

In addition, a shielding film 1015 capable of shielding light is formed over the substrate (counter substrate) 1013 so as to overlap with the photodiode 1002. By providing the shielding film 1015, it is possible to prevent light from the backlight that has passed through the substrate (counter substrate) 1013 and entered the touch panel from directly hitting the photodiode 1002, and the orientation of the liquid crystal 1008 between the pixels. It is possible to prevent the disclination due to the disturbance of the visual recognition. For the shielding film 1015, an organic resin containing a black pigment such as carbon black or low-order titanium oxide can be used. Alternatively, the shielding film 1015 can be formed using a film using chromium.

Further, a polarizing plate 1017 is provided on the surface opposite to the surface where the pixel electrode 1007 of the substrate (TFT substrate) 1001 is formed, and the surface opposite to the surface where the counter electrode 1009 of the substrate (counter substrate) 1013 is formed. A polarizing plate 1018 is provided on this surface.

The liquid crystal element may be a TN (Twisted Nematic) type, a VA (Virtual Alignment) type, an OCB (Optically Compensated Birefringence) type, an IPS (In-Plane Switching) type, or the like. Note that although the liquid crystal element 1005 in which the liquid crystal 1008 is sandwiched between the pixel electrode 1007 and the counter electrode 1009 is described as an example in this embodiment, the touch panel according to one embodiment of the present invention has this structure. It is not limited to. As in the IPS type, a pair of electrodes may be a liquid crystal element formed on the substrate (TFT substrate) 1001 side.

In this embodiment, the case where a thin semiconductor film is used for the photodiode 1002, the transistor 1003, and the storage capacitor 1004 is described as an example; however, a single crystal semiconductor substrate, an SOI substrate, or the like is used. May be.

In the cross-sectional structure described in this embodiment, light from the backlight is emitted from the substrate (counter substrate) 1013 side. That is, the object 1021 on the substrate (TFT substrate) 1001 side is irradiated through the liquid crystal element 1005 as indicated by an arrow 1020. Then, the light indicated by the arrow 1022 reflected from the detection object 1021 enters the photodiode 1002.

Here, in order to detect light of a specific color (for example, red (R), green (G), and blue (B)) with the photodiode 1002, the light indicated by the arrow 1020 from the backlight is the color. The light indicated by the arrow 1022 that passes through the liquid crystal element 1005 in the pixel irradiates the object 1021 on the substrate (TFT substrate) 1001 side and is reflected needs to enter the photodiode 1002 of the pixel. Temporarily, the light indicated by the arrow 1020 from the backlight passes through the liquid crystal element 1005 in the pixel other than the color, irradiates the detected object 1021 on the substrate (TFT substrate) 1001 side, and is indicated by the reflected arrow 1022. When light enters the photodiode 1002 of the pixel, light of different colors is mixed. That is, the photodiode 1002 of the pixel detects the intensity of the mixed light, and color imaging becomes difficult.

In general, in a liquid crystal panel, an organic EL panel, or the like, a glass substrate is often used as the substrate (TFT substrate) 1001. In a liquid crystal panel and an organic EL panel that are currently mass-produced, the glass substrate has a thickness of about 0.5 mm to 0.7 mm. On the other hand, the pixel size is less than 100 μm in the case of a high-definition panel. When the color filter method is used, for example, in the case of stripe arrangement, each color is arranged at one-third of the pixel size, that is, at intervals of several tens of μm.

The light indicated by the arrow 1020 from the backlight passes through the liquid crystal element 1005 in the pixel of the color, irradiates the detected object 1021 on the substrate (TFT substrate) 1001 side, and the reflected light indicated by the arrow 1022 In order to enter the photodiode 1002 of the pixel, the light can only spread several tens of μm while traveling a distance of 1.0 mm to 1.4 mm that reciprocates the substrate (TFT substrate) 1001. . Here, considering the detected object 1021 in contact with the substrate (TFT substrate) 1001, the above problem is the problem of light reflection at the interface between the substrate (TFT substrate) 1001 and the detected object 1021. Is equivalent. When the incident angle of light from the substrate (TFT substrate) 1001 is θ, the reflection angle of the reflected light is also θ, and when the thickness of the substrate (TFT substrate) 1001 is d, the extent of light spread is 2d · tan θ. It becomes. In the case where the substrate (TFT substrate) 1001 is thick, a small incident angle, that is, straightness of light from the backlight is required. In the above example, tan θ is required to be 1/30 to 1/50 or less, and very strict straightness is required.

Thus, in this embodiment, after a semiconductor element that forms a touch panel such as a thin film transistor or a photosensor is formed over a substrate having an insulating surface (insulating substrate), the semiconductor element is peeled from the insulating substrate. Then, a thinned TFT substrate is manufactured. In this case, the layer itself including the peeled semiconductor element can be used alone as a TFT substrate. Note that an insulating film such as a resin may be formed as a protective layer on the surface exposed by the peeling to protect the peeled semiconductor element. Alternatively, the peeled semiconductor element may be bonded to a light-transmitting substrate such as a plastic having a thickness of 10 μm to 200 μm, more preferably 20 μm to 40 μm. In this case, a combination of the peeled semiconductor element and the protective layer or the bonded substrate can be used as the TFT substrate.

The TFT substrate formed by peeling is preferably about the same as or less than the pixel pitch. Focusing on adjacent pixels, the photodiodes are arranged at substantially equal intervals, and the pixel pitch corresponds to the interval between the photodiodes. When the intervals between the photodiodes are not equal, the shortest interval between the photodiodes among adjacent pixels may be determined as the pixel pitch. By using such a thin TFT substrate, as shown in FIG. 1, light indicated by an arrow 1020 from the backlight passes through the liquid crystal element 1005 in the pixel of the color, and the substrate (TFT substrate) 1001 The distance from the object to be detected 1021 reflected as indicated by the arrow 1022 until it enters the photodiode 1002 of the pixel, that is, the distance to reciprocate the substrate (TFT substrate) 1001 (in this embodiment, several tens μm), the better. Therefore, it becomes easy to keep the light diffusion while traveling the distance within the pixel pitch, that is, within the pixel interval (several tens of μm in this embodiment), and the light emitted from the backlight has a strict straightness. Not required. Further, when light from an adjacent pixel enters the pixel, the incident angle becomes large. That is, the light from the adjacent pixels needs to pass through the TFT substrate obliquely, and the distance traveled by the light is longer than when traveling straight. That is, the light intensity of the light from the adjacent pixel is lower than that of the light from the pixel. Therefore, by using a TFT substrate with a small thickness, it is possible to prevent light from entering the photodiodes of adjacent pixels, and it is easy to avoid mixing light of different colors and to easily make color gradation. Obtainable.

Note that in the peeling step, a peeling layer is formed between the insulating substrate and the layer to be peeled (TFT substrate), a metal oxide film is provided between the peeling layer and the layer to be peeled, and the metal oxide film is crystallized by crystallization. A method of peeling the semiconductor element layer by weakening, providing an amorphous silicon film containing hydrogen between an insulating substrate having high heat resistance and a layer to be peeled, and irradiating or etching the laser light to the amorphous silicon film Removing the layer, the peeling layer is formed between the insulating substrate and the peeling layer, a metal oxide film is provided between the peeling layer and the peeling layer, and the metal oxide film And a part of the peeling layer is removed by etching with a solution or halogen fluoride gas such as NF ₃ , BrF ₃ , ClF ₃ , and then peeled off on the weakened metal oxide film. Mechanically remove the insulating substrate on which the release layer is formed Can be used a method for removing by etching with solution or _{NF 3,} BrF _3, ClF 3 halogen fluoride gas such as appropriate. In addition, a film containing nitrogen, oxygen, hydrogen, or the like (for example, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, or the like) is used as the separation layer, and the separation layer is irradiated with laser light for separation. A method may be used in which nitrogen, oxygen, or hydrogen contained in the layer is released as a gas to promote peeling between the layer to be peeled and the insulating substrate.

Moreover, the transposition process can be performed more easily by combining a plurality of the above peeling methods. In other words, laser irradiation, etching on the release layer with gas or solution, mechanical deletion with a sharp knife or scalpel, etc. to make the release layer and the semiconductor element layer easy to peel off, Peeling can also be performed by force (by machine or the like).

Alternatively, the liquid may penetrate into the interface between the peeling layer and the layer to be peeled to peel the layer to be peeled from the insulating substrate, or may be peeled off while applying a liquid such as water when peeling.

As another peeling method, when the peeling layer is formed of tungsten, the peeling may be performed while etching the etching peeling layer with a mixed solution of ammonia water and hydrogen peroxide water.

By setting it as the above forms, the cheap touch panel which can image in high resolution and color can be provided. In addition, an inexpensive touch panel manufacturing method capable of imaging with high resolution and color can be provided.

Next, a circuit configuration of the touch panel according to one embodiment of the present invention is described with reference to FIGS. The touch panel 100 includes a pixel circuit 101, a display element control circuit 102, and a photosensor control circuit 103. The pixel circuit 101 includes a plurality of pixels 104 arranged in a matrix in the matrix direction. Each pixel 104 includes a display element 105 and a photosensor 106.

The display element 105 includes a thin film transistor (TFT), a storage capacitor, a liquid crystal element having a liquid crystal layer, and the like. The thin film transistor has a function of controlling injection or discharge of charge to the storage capacitor. The storage capacitor has a function of holding a charge corresponding to a voltage applied to the liquid crystal layer. Image display is realized by making light and darkness (gradation) of light transmitted through the liquid crystal layer by utilizing the fact that the polarization direction is changed by applying a voltage to the liquid crystal layer. As the light transmitted through the liquid crystal layer, light emitted from the back surface of the liquid crystal display device by a light source (backlight) is used.

In order to perform color image display, for example, a method using a color filter, a so-called color filter method may be used. This is because the light transmitted through the liquid crystal layer passes through the color filter, so that gradations of specific colors (for example, red (R), green (G), and blue (B)) can be created. Here, when the color filter method is used, the pixel 104 having a function of emitting one of red (R), green (G), and blue (B) is set as an R pixel, a G pixel, and a B pixel, respectively. I will call it.

Note that although the case where the display element 105 includes a liquid crystal element has been described, the display element 105 may include another element such as a light-emitting element. A light-emitting element is an element whose luminance is controlled by current or voltage, and specifically includes a light-emitting diode, an OLED (Organic Light Emitting Diode), and the like.

The photosensor 106 includes a device such as a photodiode that has a function of generating an electric signal by receiving light, and a thin film transistor. Note that the light received by the photosensor 106 uses reflected light when light from a backlight is irradiated on an object to be detected.

The display element control circuit 102 is a circuit for controlling the display element 105, and inputs a signal to the display element 105 through a signal line such as a video data signal line (also referred to as “source signal line”). A driver circuit 107 and a display element driver circuit 108 for inputting a signal to the display element 105 through a scanning line (also referred to as a “gate signal line”) are provided. For example, the display element driver circuit 108 on the scan line side has a function of selecting display elements included in pixels arranged in a specific row. The display element driver circuit 107 on the signal line side has a function of applying an arbitrary potential to the display element included in the pixel in the selected row. Note that in a display element to which a high potential is applied by the display element driver circuit 108 on the scanning line side, the thin film transistor is turned on and supplied with the electric charge provided by the display element driver circuit 107 on the signal line side.

The photosensor control circuit 103 is a circuit for controlling the photosensor 106. The photosensor read circuit 109 on the signal line side such as the photosensor output signal line and the photosensor reference signal line, and the photosensor drive on the scanning line side. A circuit 110 is included. For example, the photo sensor driver circuit 110 on the scanning line side has a function of selecting the photo sensor 106 included in the pixel arranged in a specific row. Further, the photosensor reading circuit 109 on the signal line side has a function of taking out an output signal of the photosensor 106 included in the pixel in the selected row. Note that the photo sensor readout circuit 109 on the signal line side is configured to take out the output of the photo sensor, which is an analog signal, outside the touch panel as an analog signal using an OP amplifier, or to convert it into a digital signal using an A / D conversion circuit. A configuration that can be taken out of the touch panel after conversion is conceivable.

A circuit diagram of the pixel 104 will be described with reference to FIG. The pixel 104 includes a display element 105 including a transistor 201, a storage capacitor 202, and a liquid crystal element 203, and a photosensor 106 including a photodiode 204, a transistor 205, and a transistor 206.

In the transistor 201, the gate is electrically connected to the gate signal line 207, one of the source and the drain is electrically connected to the video data signal line 210, and the other of the source and the drain is electrically connected to one electrode of the storage capacitor 202 and one electrode of the liquid crystal element 203. It is connected. The other electrode of the storage capacitor 202 and the other electrode of the liquid crystal element 203 are kept at a constant potential. The liquid crystal element 203 is an element including a pair of electrodes and a liquid crystal layer between the pair of electrodes.

When “High” (high potential) is applied to the gate signal line 207, the transistor 201 applies the potential of the video data signal line 210 to the storage capacitor 202 and the liquid crystal element 203. The storage capacitor 202 holds the applied potential. The liquid crystal element 203 changes the light transmittance according to the applied potential.

The photodiode 204 has one electrode electrically connected to the photodiode reset signal line 208 and the other electrode electrically connected to the gate of the transistor 205. In the transistor 205, one of a source and a drain is electrically connected to the photosensor reference signal line 212, and the other of the source and the drain is electrically connected to one of the source and the drain of the transistor 206. The transistor 206 has a gate electrically connected to the gate signal line 209 and the other of the source and the drain electrically connected to the photosensor output signal line 211.

Next, the configuration of the photosensor readout circuit 109 will be described with reference to FIG. In FIG. 4, the photosensor readout circuit 300 for one column of pixels includes a p-type TFT 301 and a storage capacitor 302. In addition, a photosensor output signal line 211 and a precharge signal line 303 of the pixel column.

In the photo sensor readout circuit 300, the potential of the photo sensor signal line is set to a reference potential before the operation of the photo sensor in the pixel. In FIG. 4, by setting the precharge signal line 303 to “Low” (low potential), the photosensor output signal line 211 can be set to a high potential which is a reference voltage. Note that the storage capacitor 302 is not necessarily provided when the parasitic capacitance of the photosensor output signal line 211 is large. Note that the reference potential may be a low potential. In this case, by using an n-type TFT, the precharge signal line 303 is set to “High”, whereby the photosensor output signal line 211 can be set to a low potential which is a reference voltage.

Next, the reading operation of the photosensor in this touch panel will be described with reference to the timing chart of FIG. 5, the signals 401 to 404 are the photodiode reset signal line 208 in FIG. 3, the gate signal line 209 to which the gate of the transistor 206 is connected, the gate signal line 213 to which the gate of the transistor 205 is connected, and the photosensor output. This corresponds to the potential of the signal line 211. The signal 405 corresponds to the potential of the precharge signal line 303 in FIG.

At time A, when the potential of the photodiode reset signal line 208 (signal 401) is “High”, the photodiode 204 is turned on, and the potential of the gate signal line 213 to which the gate of the transistor 205 is connected (signal 403) is “ High ”. When the potential of the precharge signal line 303 (signal 405) is “Low”, the potential of the photosensor output signal line 211 (signal 404) is precharged to “High”.

At time B, when the potential of the photodiode reset signal line 208 (signal 401) is set to “Low”, the potential of the gate signal line 213 to which the gate of the transistor 205 is connected (signal 403) is turned off by the off-current of the photodiode 204. It begins to decline. When the photodiode 204 is irradiated with light, an off-current increases, so that the potential (signal 403) of the gate signal line 213 to which the gate of the transistor 205 is connected changes in accordance with the amount of the irradiated light. That is, the current between the source and drain of the transistor 205 changes.

At time C, when the potential of the gate signal line 209 (signal 402) is set to “High”, the transistor 206 is turned on, the photosensor reference signal line 212 and the photosensor output signal line 211 are connected, and the transistor 205 and the transistor 206 are connected. Through. Then, the potential (signal 404) of the photosensor output signal line 211 decreases. Before time C, the potential of the precharge signal line 303 (signal 405) is set to “Low”, and the precharge of the photosensor output signal line 211 is completed. Here, the speed at which the potential (signal 404) of the photosensor output signal line 211 decreases depends on the current between the source and drain of the transistor 205. That is, it changes according to the amount of light irradiated to the photodiode 204.

When the potential of the gate signal line 209 (signal 402) is set to “Low” at time D, the transistor 206 is cut off, and the potential of the photosensor output signal line 211 (signal 404) becomes a constant value after time D. Here, the constant value changes according to the amount of light irradiated on the photodiode 204. Therefore, by acquiring the potential of the photosensor output signal line 211, the amount of light applied to the photodiode 204 can be known.

(Embodiment 2)
In this embodiment mode, after a semiconductor element is formed over a supporting substrate, the semiconductor element is peeled off from the supporting substrate and bonded to the flexible substrate, whereby display is performed on the flexible substrate. A structure for manufacturing a touch panel including an element and a photosensor will be described.

First, as illustrated in FIG. 6A, an insulating film 701, a separation layer 702, an insulating film 703, and a semiconductor film 704 are formed in this order over a substrate 700 having heat resistance. The insulating film 701, the separation layer 702, the insulating film 703, and the semiconductor film 704 can be formed successively.

As the substrate 700 functioning as a support substrate, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a sapphire substrate, a ceramic substrate, or the like can be used. Alternatively, a metal substrate including a stainless steel substrate with an insulating film formed on the surface, or a semiconductor substrate such as a silicon substrate may be used. A substrate made of a synthetic resin having flexibility, such as plastic, generally has a lower heat-resistant temperature than the above-mentioned substrate, but can be used as long as it can withstand the processing temperature in the manufacturing process. .

Polyester represented by polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), polyimide, acrylonitrile butadiene styrene resin, polyvinyl chloride, polypropylene, polyvinyl acetate, acrylic resin and the like.

Note that although the separation layer 702 is provided over the entire surface of the substrate 700 in this embodiment, the present invention is not limited to this structure. For example, the peeling layer 702 may be partially formed on the substrate 700 by using a photolithography method or the like.

The insulating films 701 and 703 are formed using an insulating material such as silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide by a CVD method, a sputtering method, or the like.

Here, the oxynitride is a substance having a higher oxygen content than nitrogen in the composition, and the nitride oxide means a substance having a higher nitrogen content than oxygen in the composition. . For example, silicon oxynitride refers to oxygen of 50 atomic% to 70 atomic%, nitrogen of 0.5 atomic% to 15 atomic%, silicon of 25 atomic% to 35 atomic%, and hydrogen of 0.1 atomic% The substance can be contained in the range of 10 atomic% or less. In addition, silicon nitride oxide means oxygen of 5 atomic% to 30 atomic%, nitrogen of 20 atomic% to 55 atomic%, silicon of 25 atomic% to 35 atomic%, and hydrogen of 10 atomic% to 30 atomic%. The substance can be included in the following ranges. However, the range of the said composition is a thing when it measures using Rutherford backscattering method (RBS: Rutherford Backscattering Spectrometry) and a hydrogen forward scattering method (HFS: Hydrogen Forward Scattering). Further, the content ratio of the constituent elements takes a value that the total does not exceed 100 atomic%.

The insulating films 701 and 703 are provided to prevent an alkali metal such as Na or an alkaline earth metal contained in the substrate 700 from diffusing into the semiconductor film 704 and adversely affecting the characteristics of the semiconductor element such as a TFT. . The insulating film 703 also has a function of preventing the impurity element contained in the separation layer 702 from diffusing into the semiconductor film 704 and protecting the semiconductor element in a step of peeling the semiconductor element later.

The insulating film 701 and the insulating film 703 may be formed using a single insulating film or a stack of a plurality of insulating films. In this embodiment, the insulating film 703 is formed by sequentially stacking a silicon oxynitride film with a thickness of 100 nm, a silicon nitride oxide film with a thickness of 50 nm, and a silicon oxynitride film with a thickness of 100 nm. The film thickness and the number of stacked layers are not limited to this. For example, instead of the lower silicon oxynitride film, a siloxane-based resin having a thickness of 0.5 to 3 μm may be formed by a spin coating method, a slit coater method, a droplet discharge method, a printing method, or the like. Further, a silicon nitride film may be used instead of the middle silicon nitride oxide film. Further, a silicon oxide film may be used instead of the upper silicon oxynitride film. Each film thickness is preferably 0.05 to 3 μm, and can be freely selected from the range.

Alternatively, the lower layer of the insulating film 703 closest to the separation layer 702 may be formed using a silicon oxynitride film or a silicon oxide film, the middle layer may be formed using a siloxane-based resin, and the upper layer may be formed using a silicon oxide film.

Note that the siloxane-based resin corresponds to a resin including a Si—O—Si bond formed using a siloxane-based material as a starting material. The siloxane-based resin may have at least one of fluorine, alkyl groups, and aromatic hydrocarbons in addition to hydrogen as a substituent.

The silicon oxide film can be formed by a method such as thermal CVD, plasma CVD, atmospheric pressure CVD, or bias ECRCVD, using a mixed gas of a combination of silane and oxygen, TEOS (tetraethoxysilane), and oxygen. The silicon nitride film can be typically formed by plasma CVD using a mixed gas of silane and ammonia. The silicon oxynitride film and the silicon nitride oxide film can be typically formed by plasma CVD using a mixed gas of silane and dinitrogen monoxide.

The release layer 702 is formed by sputtering, plasma CVD, coating, printing, or the like using tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), An element selected from cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silicon (Si), Alternatively, a layer formed of an alloy material containing an element as a main component or a compound material containing an element as a main component is formed as a single layer or a stacked layer. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Here, the coating method includes a spin coating method, a droplet discharge method, a dispensing method, a nozzle printing method, and a slot die coating method.

In the case where the separation layer 702 has a single-layer structure, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is preferably formed. Alternatively, a layer containing tungsten oxide or oxynitride, a layer containing molybdenum oxide or oxynitride, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum is formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

In the case where the separation layer 702 has a stacked structure, preferably, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed as the first layer, and tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed as the second layer. An oxide, nitride, oxynitride, or nitride oxide is formed.

In the case where a stacked structure of a layer containing tungsten and a layer containing tungsten oxide is formed as the separation layer 702, a layer containing tungsten is formed, and an insulating layer formed using an oxide is formed thereover. The fact that a layer containing an oxide of tungsten is formed at the interface between the tungsten layer and the insulating layer may be utilized. Further, the layer containing tungsten oxide may be formed by performing thermal oxidation treatment, oxygen plasma treatment, treatment with a strong oxidizing power such as ozone water, or the like on the surface of the layer containing tungsten. Further, the plasma treatment or the heat treatment may be performed in an atmosphere of oxygen, nitrogen, dinitrogen monoxide, dinitrogen monoxide alone, or a mixed gas of a gas and another gas. The same applies to the case where a layer containing tungsten nitride, oxynitride, and nitride oxide is formed. After a layer containing tungsten is formed, a silicon nitride layer, a silicon oxynitride layer, and a silicon nitride oxide layer are formed thereon. A layer may be formed.

The semiconductor film 704 is preferably formed without being exposed to the air after the insulating film 703 is formed. The thickness of the semiconductor film 704 is 20 to 200 nm (desirably 40 to 170 nm, preferably 50 to 150 nm). Note that the semiconductor film 704 may be an amorphous semiconductor or a polycrystalline semiconductor. For the semiconductor film 704, a compound semiconductor such as germanium, gallium arsenide, indium phosphide, zinc selenide, gallium nitride, or silicon germanium can be used in addition to silicon and silicon carbide.

Note that the semiconductor film 704 may be crystallized by a known technique. Known crystallization methods include a laser crystallization method using laser light and a crystallization method using a catalytic element. Alternatively, a crystallization method using a catalytic element and a laser crystallization method can be used in combination. Further, when a substrate having excellent heat resistance such as quartz is used as the substrate 700, a thermal crystallization method using an electric furnace, a lamp annealing crystallization method using infrared light, a crystallization method using a catalytic element, A crystal method in which high-temperature annealing at about 950 ° C. is appropriately combined may be used.

For example, when laser crystallization is used, heat treatment is performed on the semiconductor film 704 at 550 ° C. for 4 hours in order to increase the resistance of the semiconductor film 704 to the laser before laser crystallization. By using a solid-state laser capable of continuous oscillation and irradiating laser light of the second harmonic to the fourth harmonic of the fundamental wave, a crystal having a large grain size can be obtained. For example, typically, it is desirable to use the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm). Specifically, laser light emitted from a continuous wave YVO ₄ laser is converted into a harmonic by a nonlinear optical element to obtain laser light with an output of 10 W. Then, it is preferably formed into a rectangular or elliptical laser beam on the irradiation surface by an optical system, and the semiconductor film 704 is irradiated. Energy density was about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec.

As a continuous wave gas laser, an Ar laser, a Kr laser, or the like can be used. As continuous wave solid-state lasers, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, forsterite (Mg ₂ SiO ₄ ) laser, GdVO ₄ , Y ₂ O ₃ laser, glass laser, ruby laser, alexandrite laser, A Ti: sapphire laser or the like can be used.

As pulse oscillation lasers, for example, Ar laser, Kr laser, excimer laser, CO ₂ laser, YAG laser, Y ₂ O ₃ laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, alexandrite laser, A Ti: sapphire laser, a copper vapor laser, or a gold vapor laser can be used.

Alternatively, laser crystallization may be performed using a frequency band that is significantly higher than a frequency band of several tens to several hundreds Hz that is normally used, with an oscillation frequency of pulsed laser light of 10 MHz or higher. It is said that the time from when the semiconductor film 704 is irradiated with laser light by pulse oscillation until the semiconductor film 704 is completely solidified is several tens to several hundreds nsec. Therefore, by using the above frequency, the laser light of the next pulse can be irradiated from the time when the semiconductor film 704 is melted by the laser light to solidify. Therefore, since the solid-liquid interface can be continuously moved in the semiconductor film 704, the semiconductor film 704 having crystal grains continuously grown in the scanning direction is formed. Specifically, a set of crystal grains having a width of 10 to 30 μm in the scanning direction of the included crystal grains and a width of about 1 to 5 μm in a direction perpendicular to the scanning direction can be formed. By forming single crystal crystal grains continuously grown along the scanning direction, it is possible to form a semiconductor film 704 having almost no crystal grain boundaries in at least the channel direction of the TFT.

Laser crystallization may be performed by irradiating a continuous-wave fundamental laser beam and a continuous-wave harmonic laser beam in parallel, or a continuous-wave fundamental laser beam and a pulse oscillation harmonic. You may make it irradiate with the laser beam of a wave in parallel.

Note that laser light may be irradiated in an inert gas atmosphere such as a rare gas or nitrogen. Thereby, roughness of the semiconductor surface due to laser light irradiation can be suppressed, and variation in threshold voltage caused by variation in interface state density can be suppressed.

By the above-described laser light irradiation, a semiconductor film 704 with higher crystallinity is formed. Note that a polycrystalline semiconductor formed in advance by a sputtering method, a plasma CVD method, a thermal CVD method, or the like may be used for the semiconductor film 704.

In this embodiment mode, the semiconductor film 704 is crystallized; however, the semiconductor film 704 may be crystallized without being crystallized, and the process described below may be performed as it is. A TFT using an amorphous semiconductor or a microcrystalline semiconductor has an advantage that a manufacturing cost can be reduced and a yield can be increased because the number of manufacturing steps is smaller than that of a TFT using a polycrystalline semiconductor.

An amorphous semiconductor can be obtained by glow discharge decomposition of a gas containing silicon. Examples of the gas containing silicon include monosilane and disilane. The gas containing silicon may be diluted with hydrogen, hydrogen, and helium.

Next, channel doping in which an impurity element imparting p-type conductivity or an impurity element imparting n-type conductivity is added to the semiconductor film 704 at a low concentration is performed. Channel doping may be performed on the entire semiconductor film 704 or may be selectively performed on part of the semiconductor film 704. As the impurity element imparting p-type conductivity, boron (B), aluminum (Al), gallium (Ga), or the like can be used. As the impurity element imparting n-type conductivity, phosphorus (P), arsenic (As), or the like can be used. Here, boron (B) is used as the impurity element, and is added so that the boron is contained at a concentration of 1 × 10 ^{16 to} 5 × 10 ¹⁷ / cm ³ .

Next, as illustrated in FIG. 6B, the semiconductor film 704 is processed (patterned) into a predetermined shape, so that island-shaped semiconductor films 705 to 707 are formed. Then, a gate insulating film 709 is formed so as to cover the island-shaped semiconductor films 705 to 707. The gate insulating film 709 can be formed using a single layer or a stack of films containing silicon nitride, silicon oxide, silicon nitride oxide, or silicon oxynitride by a plasma CVD method, a sputtering method, or the like. In the case of stacking, for example, a three-layer structure of a silicon oxide film, a silicon nitride film, and a silicon oxide film is preferable from the substrate 700 side.

The gate insulating film 709 may be formed by oxidizing or nitriding the surface of the island-shaped semiconductor films 705 to 707 by performing high-density plasma treatment. The high-density plasma treatment is performed using, for example, a rare gas such as He, Ar, Kr, or Xe and a mixed gas such as oxygen, nitrogen oxide, ammonia, nitrogen, or hydrogen. In this case, high-density plasma can be generated at a low electron temperature by exciting the plasma by introducing microwaves. By oxidizing or nitriding the surface of the semiconductor film with oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by such high-density plasma, An insulating film having a thickness of 20 nm, typically 5 to 10 nm, is formed in contact with the semiconductor film. This 5 to 10 nm insulating film is used as the gate insulating film 709.

Since the oxidation or nitridation of the semiconductor film by the high-density plasma treatment described above proceeds by a solid phase reaction, the interface state density between the gate insulating film and the semiconductor film can be extremely reduced. Further, by directly oxidizing or nitriding the semiconductor film by high-density plasma treatment, variation in the thickness of the formed insulating film can be suppressed. Also, when the semiconductor film has crystallinity, the surface of the semiconductor film is oxidized by solid phase reaction using high-density plasma treatment, so that the rapid oxidation only at the crystal grain boundary is suppressed and the uniformity is good. A gate insulating film having a low interface state density can be formed. A transistor in which an insulating film formed by high-density plasma treatment is included in part or all of a gate insulating film can suppress variation in characteristics.

Next, as shown in FIG. 6C, after a conductive film is formed over the gate insulating film 709, the conductive film is processed (patterned) into a predetermined shape, so that the island-shaped semiconductor films 705 to 707 are formed. An electrode 710 is formed above. In this embodiment mode, the electrode 710 is formed by patterning two stacked conductive films. As the conductive film, tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), or the like can be used. Alternatively, an alloy containing the above metal as a main component or a compound containing the above metal may be used. Alternatively, a semiconductor film such as polycrystalline silicon in which an impurity element such as phosphorus imparting conductivity is doped may be used.

In this embodiment mode, a tantalum nitride film or a tantalum film is used as the first conductive film, and a tungsten film is used as the second conductive film. As a combination of two conductive films, a tungsten nitride film and a tungsten film, a molybdenum nitride film and a molybdenum film, an aluminum film and a tantalum film, an aluminum film and a titanium film, and the like can be given in addition to the example shown in this embodiment mode. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed in the step after forming the two-layer conductive film. As the combination of the second conductive films, for example, silicon and nickel silicide doped with an impurity imparting n-type, Si and WSix doped with an impurity imparting n-type, and the like can be used.

In this embodiment mode, the electrode 710 is formed using two stacked conductive films; however, this embodiment mode is not limited to this structure. The electrode 710 may be formed of a single conductive film or may be formed by stacking three or more conductive films. In the case of a three-layer structure in which three or more conductive films are stacked, a stacked structure of a molybdenum film, an aluminum film, and a molybdenum film is preferably employed.

A CVD method, a sputtering method, or the like can be used for forming the conductive film. In this embodiment mode, the first conductive film is formed with a thickness of 20 to 100 nm, and the second conductive film is formed with a thickness of 100 to 400 nm.

Note that as a mask used for forming the electrode 710, silicon oxide, silicon oxynitride, or the like may be used instead of a resist. In this case, a step of forming a mask made of silicon oxide, silicon oxynitride, or the like by patterning is added, but the film thickness of the mask during etching is less than that of the resist, so that the electrode 710 having a desired width can be formed. . Alternatively, the electrode 710 may be selectively formed using a droplet discharge method without using a mask.

The droplet discharge method means a method of forming a predetermined pattern by discharging or ejecting droplets containing a predetermined composition from the pores, and includes an ink jet method and the like in its category.

Next, using the electrode 710 as a mask, the island-shaped semiconductor films 705 to 707 are doped with an impurity element imparting n-type (typically P (phosphorus) or As (arsenic)) to a low concentration (first Doping process). The conditions of the first doping step are a dose amount of 1 × 10 ¹⁵ to 1 × 10 ¹⁹ / cm ³ and an acceleration voltage of 50 to 70 keV, but are not limited thereto. In this first doping step, doping is performed through the gate insulating film 709, and low-concentration impurity regions 711 are formed in the island-shaped semiconductor films 705 to 707, respectively. Note that the first doping step may be performed by covering the island-shaped semiconductor film 706 to be a p-channel TFT with a mask.

Next, as illustrated in FIG. 7A, part of the island-shaped semiconductor film 705 to be a photodiode, the island-shaped semiconductor film 706 to be an n-channel TFT, and the island-shaped semiconductor film to be a capacitor element A mask 712 is formed so as to cover 707. Then, in addition to the mask 712, the electrode 710 is used as a mask, and a part of the island-shaped semiconductor film 705 is doped with an impurity element imparting p-type (typically, B (boron)) at a high concentration (second) Doping process). The conditions for the second doping step are a dose amount of 1 × 10 ¹⁹ to 1 × 10 ²⁰ / cm ³ and an acceleration voltage of ²⁰ to 40 keV. By this second doping step, doping is performed through the gate insulating film 709, and a p-type high concentration impurity region 713 is formed in the island-shaped semiconductor film 705.

Next, as illustrated in FIG. 7B, after the mask 712 is removed by ashing or the like, an insulating film is formed so as to cover the gate insulating film 709 and the electrode 710. The insulating film is formed by a single layer or a stacked layer of a silicon film, a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, or a film containing an organic material such as an organic resin by a plasma CVD method, a sputtering method, or the like. To do. In this embodiment, a silicon oxide film with a thickness of 100 nm is formed by a plasma CVD method.

Then, the gate insulating film 709 and the insulating film are partially etched by anisotropic etching mainly in the vertical direction. The gate insulating film 709 is partially etched by the anisotropic etching, so that the gate insulating film 714 partially formed over the island-shaped semiconductor films 705 to 707 is formed. Further, by the anisotropic etching, the insulating film formed so as to cover the gate insulating film 709 and the electrode 710 is partially etched, so that the sidewall 715 in contact with the side surface of the electrode 710 is formed. The sidewall 715 is used as a doping mask when an LDD (Lightly Doped Drain) region is formed. In this embodiment, a mixed gas of CHF ₃ and He is used as the etching gas. Note that the step of forming the sidewall 715 is not limited to these steps.

Next, as shown in FIG. 7C, a mask 716 is formed so as to cover the p-type high concentration impurity region 713 in the island-shaped semiconductor film 705 to be a photodiode. Then, in addition to the formed mask 716, the electrode 710 and the sidewall 715 are used as masks, and an impurity element imparting n-type conductivity (typically P or As) is part of the island-shaped semiconductor film 705, The semiconductor film 706 and the island-shaped semiconductor film 707 are doped at a high concentration (third doping step). The conditions of the third doping step are as follows: dose amount: 1 × 10 ¹⁹ to 1 × 10 ²⁰ / cm ³ , acceleration voltage: 60 to 100 keV. By this third doping step, an n-type high concentration impurity region 717 is formed in part of the island-shaped semiconductor film 705, the island-shaped semiconductor film 706, and the island-shaped semiconductor film 707.

Note that the sidewall 715 functions as a mask when an impurity imparting a high concentration of n-type is doped later to form a low concentration impurity region or a non-doped offset region below the sidewall 715. Therefore, in order to control the width of the low-concentration impurity region or the offset region, the conditions for anisotropic etching when forming the sidewall 715 or the thickness of the insulating film for forming the sidewall 715 are changed as appropriate. The size of the sidewall 715 may be adjusted.

Next, after removing the mask 716 by ashing or the like, the impurity region may be activated by heat treatment. For example, after a 50 nm silicon oxynitride film is formed, heat treatment may be performed in a nitrogen atmosphere at 550 ° C. for 4 hours.

Further, after a silicon nitride film containing hydrogen is formed to a thickness of 100 nm, a heat treatment is performed in a nitrogen atmosphere at 410 ° C. for 1 hour to hydrogenate the island-shaped semiconductor films 705 to 707. Also good. Alternatively, a process of hydrogenating the island-shaped semiconductor films 705 to 707 may be performed by performing heat treatment at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing hydrogen. For the heat treatment, thermal annealing, laser annealing, RTA, or the like can be used. By the heat treatment, not only hydrogenation but also activation of the impurity element added to the semiconductor film can be performed. Further, plasma hydrogenation (using hydrogen excited by plasma) may be performed as another means of hydrogenation. By this hydrogenation step, dangling bonds can be terminated by thermally excited hydrogen.

Through the series of steps described above, the photodiode 718, the n-channel TFT 719, and the capacitor 720 are formed.

Next, as illustrated in FIG. 8A, an insulating film 722 for protecting the photodiode 718, the n-channel TFT 719, and the capacitor 720 is formed. Although the insulating film 722 is not necessarily provided, the formation of the insulating film 722 prevents impurities such as an alkali metal and an alkaline earth metal from entering the photodiode 718, the n-channel TFT 719, and the capacitor 720. I can do it. Specifically, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum oxide, silicon oxide, or the like is preferably used for the insulating film 722. In this embodiment, a silicon oxynitride film with a thickness of about 600 nm is used as the insulating film 722. In this case, the hydrogenation step may be performed after the silicon oxynitride film is formed.

Next, an insulating film 723 is formed over the insulating film 722 so as to cover the photodiode 718, the n-channel TFT 719, and the capacitor 720. The insulating film 723 can be formed using a heat-resistant organic material such as polyimide, acrylic, polyimide, benzocyclobutene, polyamide, or epoxy. In addition to the above organic materials, low dielectric constant materials (low-k materials), siloxane resins, silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, PSG (phosphorus glass), BPSG (phosphorus boron glass), Alumina or the like can be used. The siloxane-based resin may have at least one of fluorine, alkyl groups, and aromatic hydrocarbons in addition to hydrogen as a substituent. Note that the insulating film 723 may be formed by stacking a plurality of insulating films formed using these materials.

In order to form the insulating film 723, a CVD method, a sputtering method, an SOG method, spin coating, dipping, spray coating, a droplet discharge method (ink jet method, screen printing, offset printing, etc.), a doctor knife, A roll coater, curtain coater, knife coater, or the like can be used.

Next, contact holes are formed in the insulating film 722 and the insulating film 723 so that the island-shaped semiconductor films 705 to 707 are partially exposed. Then, conductive films 725 to 729 are formed in contact with the island-shaped semiconductor films 705 to 707 through the contact holes. The gas used for etching when opening the contact hole is a mixed gas of CHF ₃ and He, but is not limited to this.

The conductive films 725 to 729 can be formed by a CVD method, a sputtering method, or the like. Specifically, the conductive films 725 to 729 include aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), Gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or the like can be used. Alternatively, an alloy containing the above metal as a main component or a compound containing the above metal may be used. The conductive films 725 to 729 can be formed by stacking a single layer or a plurality of layers using the above metal.

As an example of an alloy containing aluminum as a main component, an alloy containing aluminum as a main component and containing nickel can be given. In addition, a material containing aluminum as a main component and containing nickel and one or both of carbon and silicon can be given as an example. Aluminum and aluminum silicon are suitable as materials for forming the conductive films 725 to 729 because they have low resistance and are inexpensive. In particular, an aluminum silicon film can prevent generation of hillocks in resist baking as compared with an aluminum film when the conductive films 725 to 729 are patterned. Further, instead of silicon (Si), about 0.5% of Cu may be mixed into the aluminum film.

For the conductive films 725 to 729, for example, a stacked structure of a barrier film, an aluminum silicon film, and a barrier film, or a stacked structure of a barrier film, an aluminum silicon film, a titanium nitride film, and a barrier film may be employed. Note that a barrier film is a film formed using titanium, a nitride of titanium, molybdenum, or a nitride of molybdenum. When a barrier film is formed so as to sandwich an aluminum silicon film, generation of hillocks of aluminum or aluminum silicon can be further prevented. Further, when a barrier film is formed using titanium which is an element having high reducibility, even if a thin oxide film is formed on the island-shaped semiconductor films 705 to 707, titanium contained in the barrier film forms this oxide film. By reducing, the conductive films 725 to 729 and the island-shaped semiconductor films 705 to 707 can make good contact. Further, a plurality of barrier films may be stacked. In that case, for example, the conductive films 725 to 729 can have a five-layer structure of titanium, titanium nitride, aluminum silicon, titanium, and titanium nitride from the lower layer.

Note that the conductive films 725 and 726 are connected to the high-concentration impurity regions 713 and 717 of the photodiode 718, respectively. The conductive films 727 and 728 are connected to the high concentration impurity region 713 of the n-channel TFT 719. The conductive films 728 and 729 are connected to the high concentration impurity region 717 of the capacitor 720.

Next, as illustrated in FIG. 8B, the pixel electrode 731 is formed over the insulating film 723 so as to be in contact with the conductive film 729. FIG. 8B illustrates an example in which a pixel electrode 731 is formed using a light-transmitting conductive material and a transmissive liquid crystal element is manufactured; however, the present invention is not limited to this structure. The touch panel according to one embodiment of the present invention may be a transflective type.

Examples of the light-transmitting conductive material include indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), organic indium, organic tin, zinc oxide, and indium containing zinc oxide (ZnO). Zinc oxide (IZO (Indium Zinc Oxide)), ZnO doped with gallium (Ga), tin oxide (SnO ₂ ), indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium containing titanium oxide An oxide, indium tin oxide containing titanium oxide, or the like can be used. Alternatively, a conductive high molecular material (also referred to as a conductive polymer) can be used as the light-transmitting conductive material. As the conductive polymer material, a π-electron conjugated conductive polymer can be used. Examples thereof include polyaniline and / or a derivative thereof, polypyrrole and / or a derivative thereof, polythiophene and / or a derivative thereof, and a copolymer of two or more of these.

Next, as shown in FIG. 8C, an insulating film 703, a photodiode 718 formed over the insulating film 703, an n-channel TFT 719, a capacitor 720, a conductive film 725 to a conductive film 729, and a pixel electrode 731 are formed. The layer to be peeled 738 and the temporary support substrate 737 are bonded using a peeling adhesive 736. Then, the layer to be peeled is peeled from the substrate 700 in the peeling layer 702. Accordingly, the layer to be peeled 738 is provided on the temporary support substrate 737 side. Note that in the separation of the layer to be peeled 738, the peeling layer 702 may not be completely removed, and a part of the peeling layer 702 may remain in the insulating film 703.

As the temporary support substrate 737, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, a metal substrate, or the like can be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used, or a flexible substrate such as a film may be used.

In addition, the peeling adhesive 736 used here is a material that is soluble in water or a solvent, or a temporary support substrate 737 and a layer to be peeled, which can be plasticized by irradiation with ultraviolet rays or the like. An adhesive that can be chemically or physically separated is used.

Note that the transfer process to the temporary support substrate 737 shown as an example above may be another method. For example, a peeling layer is formed between the substrate and the peelable layer, a metal oxide film is provided between the peeling layer and the peelable layer, the metal oxide film is weakened by crystallization, and the peelable layer is peeled off A method is provided in which an amorphous silicon film containing hydrogen is provided between a support substrate having high heat resistance and a layer to be peeled, and the amorphous silicon film is removed by laser light irradiation or etching, whereby the layer to be peeled is removed. Method of peeling, forming a peeling layer between the supporting substrate and the layer to be peeled, providing a metal oxide film between the peeling layer and the layer to be peeled, weakening the metal oxide film by crystallization, and further A method in which a part is removed by etching with a solution or halogen fluoride gas such as NF ₃ , BrF ₃ , ClF ₃ , and then peeled off in the weakened metal oxide film, and the support substrate on which the layer to be peeled is formed is mechanically Delete or remove solution or NF ₃ , BrF ₃ , ClF A method of removing by etching with halogen fluoride gas such as ₃ can be used as appropriate. In addition, a film containing nitrogen, oxygen, hydrogen, or the like (for example, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, or the like) is used as the separation layer, and the separation layer is irradiated with laser light for separation. A method may be used in which nitrogen, oxygen, or hydrogen contained in the layer is released as a gas to promote peeling between the layer to be peeled and the substrate.

Moreover, the transposition process can be performed more easily by combining a plurality of the above peeling methods. That is, laser light irradiation, etching of the peeling layer with gas or solution, mechanical deletion with a sharp knife or scalpel, etc. are performed to make the peeling layer 738 easy to peel off, Peeling can also be performed with a strong force (by machine or the like).

Alternatively, the liquid may penetrate into the interface between the peeling layer and the layer to be peeled to peel the layer to be peeled from the support substrate, or may be peeled off while applying a liquid such as water or ethanol when peeling. .

As another peeling method, in the case where the peeling layer 702 is formed of tungsten, the peeling may be performed while etching the etching peeling layer with a mixed solution of ammonia water and hydrogen peroxide water.

Next, as illustrated in FIG. 9A, a substrate 744 is attached to the surface exposed by the above-described separation of the layer to be peeled 738 using an adhesive 770. Then, the peeling adhesive 736 is dissolved or plasticized, and the temporary support substrate 737 is removed.

The substrate 744 has a property of transmitting visible light, and has a thickness of 10 μm to 200 μm, preferably 20 μm to 40 μm. For example, the substrate 744 can be formed using an organic material such as plastic that has flexibility and a property of transmitting visible light. Alternatively, a flexible inorganic material may be used for the substrate 744. As the plastic substrate, ARTON (manufactured by JSR) made of polynorbornene with a polar group can be used. Polyesters represented by polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI) ), Polyarylate (PAR), polybutylene terephthalate (PBT), polyimide, acrylonitrile butadiene styrene resin, polyvinyl chloride, polypropylene, polyvinyl acetate, acrylic resin and the like.

As a material of the adhesive 770, various curable adhesives such as a photo-curable adhesive such as a reactive curable adhesive, a thermosetting adhesive, and an ultraviolet curable adhesive, and an anaerobic adhesive can be used.

A low water-permeable protective layer such as a film containing nitrogen and silicon such as silicon nitride or silicon oxynitride or a film containing nitrogen and aluminum such as aluminum nitride may be formed over the substrate 744 in advance.

Note that in the case where semiconductor elements corresponding to a plurality of touch panels are formed over the substrate 700, the layer to be peeled 738 is divided for each touch panel. For the division, a laser irradiation apparatus, a dicing apparatus, a scribing apparatus, or the like can be used.

Next, as illustrated in FIG. 9B, an alignment film 750 is formed so as to cover the conductive films 725 to 729 and the pixel electrode 731, and a rubbing process is performed. The alignment film 750 is selectively formed in a region to be a touch panel by patterning or the like. Then, a sealing material 751 for sealing the liquid crystal is formed.

On the other hand, a substrate 754 on which a counter electrode 752 using a transparent conductive film and an alignment film 753 subjected to rubbing treatment are formed is prepared. The substrate 754 includes a shielding film 771 that can shield light at a position overlapping with the photodiode 718, and a color filter 772 that allows light in a specific wavelength region to pass through a position overlapping with a region that later becomes the liquid crystal element 760. Is formed. A polarizing plate 756 is attached to the surface of the substrate 754 opposite to the surface on which the counter electrode 752 is formed.

As the substrate 754, a light-transmitting substrate such as a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, or a sapphire substrate can be used. A substrate made of a synthetic resin having flexibility, such as plastic, generally has a lower heat-resistant temperature than the above-mentioned substrate, but can be used as long as it can withstand the processing temperature in the manufacturing process. . Polyester represented by polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), polyimide, acrylonitrile butadiene styrene resin, polyvinyl chloride, polypropylene, polyvinyl acetate, acrylic resin and the like.

Note that the thickness of the substrate 744 is as small as 10 μm to 200 μm, preferably 20 μm to 40 μm, and has flexibility. Therefore, in the case where a liquid crystal element is used for the display element, a substrate that is thicker and less flexible than the substrate 744 is used for the substrate 754, or a glass substrate, quartz, or the like is used as the substrate 754 in order to maintain a uniform cell gap. It is desirable to use a substrate having little flexibility such as a substrate or a sapphire substrate.

In the case where a light-emitting element that emits light itself is used for the display element, the substrate 754 does not necessarily have a property of transmitting visible light. In this case, a stainless steel substrate, a semiconductor substrate, or the like over which an insulating film is formed can be used as the substrate 754.

Then, liquid crystal 755 is dropped on a region surrounded by the sealant 751, and a separately prepared substrate 754 is attached using the sealant 751 so that the counter electrode 752 and the pixel electrode 731 face each other. Note that a filler may be mixed in the sealing material 751.

For the counter electrode 752, a light-transmitting conductive material that can be used for the pixel electrode 731 can be used. The pixel electrode 731, the liquid crystal 755, and the counter electrode 752 overlap with each other, whereby the liquid crystal element 760 is formed.

The liquid crystal injection described above uses a dispenser type (dropping type), but the present invention is not limited to this. A dip type (pumping type) in which liquid crystal is injected after the substrate 754 is bonded may be used.

In this embodiment mode, the thickness of the gate insulating film 714 is the same in all the photodiodes 718, the n-channel TFT 719, and the capacitor 720; however, the present invention is not limited to this structure. For example, in a circuit that is required to be driven at a higher speed, the thickness of the gate insulating film included in the TFT may be made thinner than in other circuits.

Note that although a thin film transistor is described as an example in this embodiment mode, the present invention is not limited to this structure. In addition to the thin film transistor, a transistor formed using single crystal silicon, a transistor formed using an SOI substrate, or the like can be used.

This embodiment can be implemented in combination with any of the above embodiments as appropriate.

In this example, arrangement of a panel and a light source in a touch panel according to one embodiment of the present invention will be described.

FIG. 10 is an example of a perspective view illustrating a structure of a touch panel according to one embodiment of the present invention. The touch panel illustrated in FIG. 10 includes a panel 1601 in which pixels including a liquid crystal element, a photodiode, a thin film transistor, and the like are formed between a pair of substrates, a first diffusion plate 1602, a prism sheet 1603, and a second diffusion plate 1604. A light guide plate 1605, a reflection plate 1606, a backlight 1608 having a plurality of light sources 1607, and a circuit board 1609.

The panel 1601, the first diffusion plate 1602, the prism sheet 1603, the second diffusion plate 1604, the light guide plate 1605, and the reflection plate 1606 are sequentially stacked. The light source 1607 is provided at the end of the light guide plate 1605, and the light from the light source 1607 diffused inside the light guide plate 1605 is opposed by the first diffusion plate 1602, the prism sheet 1603, and the second diffusion plate 1604. The panel 1601 is irradiated uniformly from the substrate side.

In this embodiment, the first diffusion plate 1602 and the second diffusion plate 1604 are used. However, the number of the diffusion plates is not limited to this, and may be one or three or more. . The diffusion plate may be provided between the light guide plate 1605 and the panel 1601. Therefore, the diffusion plate may be provided only on the side closer to the panel 1601 than the prism sheet 1603, or the diffusion plate may be provided only on the side closer to the light guide plate 1605 than the prism sheet 1603.

The prism sheet 1603 is not limited to the sawtooth shape in cross section shown in FIG. 10, and may have a shape capable of condensing light from the light guide plate 1605 on the panel 1601 side.

The circuit board 1609 is provided with a circuit that generates or processes various signals input to the panel 1601, a circuit that processes various signals output from the panel 1601, and the like. In FIG. 10, the circuit board 1609 and the panel 1601 are connected via an FPC (Flexible Printed Circuit) 1611. Note that the circuit may be connected to the panel 1601 using a COG (Chip ON Glass) method, or a part of the circuit may be connected to the FPC 1611 using a COF (Chip ON Film) method. good.

FIG. 10 illustrates an example in which a control system circuit that controls driving of the light source 1607 is provided on the circuit board 1609, and the control system circuit and the light source 1607 are connected via the FPC 1610. However, the control system circuit may be formed on the panel 1601. In this case, the panel 1601 and the light source 1607 are connected by an FPC or the like.

10 illustrates an edge light type light source in which the light source 1607 is disposed at the end of the panel 1601, the touch panel according to one embodiment of the present invention is a direct type in which the light source 1607 is disposed directly below the panel 1601. It may be.

For example, when a finger 1612 as an object to be detected is brought close to the panel 1601 from the TFT substrate side, light from the backlight 1608 passes through the panel 1601, a part of the light is reflected by the finger 1612, and is incident on the panel 1601 again. . By sequentially turning on the light sources 1607 corresponding to the respective colors and acquiring the image data for each color, it is possible to obtain color image data of the finger 1612 that is the detection object.

This example can be implemented in combination with any of the above embodiments as appropriate.

The touch panel according to one embodiment of the present invention has a feature that imaging data with high resolution can be obtained. Therefore, an electronic device using the touch panel according to one embodiment of the present invention can be loaded with a higher-function application by adding the touch panel to its constituent elements. A touch panel according to one embodiment of the present invention can play back a display device, a laptop personal computer, an image playback device including a recording medium (typically, a recording medium such as a DVD: Digital Versatile Disc, and display the image) It can be used for a device having a display. In addition, as an electronic device that can use the touch panel according to one embodiment of the present invention, a mobile phone, a portable game machine, a portable information terminal, an electronic book, a video camera, a digital still camera, a goggle type display (head mounted display) Navigation systems, sound reproduction devices (car audio, digital audio player, etc.), copying machines, facsimiles, printers, printer multifunction devices, automatic teller machines (ATMs), vending machines, and the like. Specific examples of these electronic devices are shown in FIGS.

FIG. 11A illustrates a display device, which includes a housing 5001, a display portion 5002, a support base 5003, and the like. The touch panel according to one embodiment of the present invention can be used for the display portion 5002. By using the touch panel according to one embodiment of the present invention for the display portion 5002, imaging data with high resolution can be obtained, and a display device on which a higher-function application is mounted can be provided. The display device includes all information display devices for personal computers, TV broadcast reception, advertisement display, and the like.

FIG. 11B illustrates a portable information terminal, which includes a housing 5101, a display portion 5102, a switch 5103, operation keys 5104, an infrared port 5105, and the like. The touch panel according to one embodiment of the present invention can be used for the display portion 5102. By using the touch panel according to one embodiment of the present invention for the display portion 5102, imaging data with high resolution can be obtained, and a portable information terminal equipped with a higher-function application can be provided.

FIG. 11C illustrates an automatic teller machine, which includes a housing 5201, a display portion 5202, a coin slot 5203, a bill slot 5204, a card slot 5205, a passbook slot 5206, and the like. The touch panel according to one embodiment of the present invention can be used for the display portion 5202. By using the touch panel according to one embodiment of the present invention for the display portion 5202, it is possible to acquire imaging data with high resolution and provide an automatic teller machine with a higher-function application. it can. And the automatic teller machine using the touch panel according to one embodiment of the present invention is more capable of reading biometric information used for biometric authentication, such as fingerprints, faces, handprints, palm prints, hand vein shapes, irises, and the like. It can be performed with high accuracy. Therefore, in the biometric authentication, the identity rejection rate that misidentifies the person but not the identity, and the acceptance rate that misidentifies the identity but not the identity of the other person are kept low. Can do.

FIG. 11D illustrates a portable game machine including a housing 5301, a housing 5302, a display portion 5303, a display portion 5304, a microphone 5305, a speaker 5306, operation keys 5307, a stylus 5308, and the like. The touch panel according to one embodiment of the present invention can be used for the display portion 5303 or the display portion 5304. By using the touch panel according to one embodiment of the present invention for the display portion 5303 or the display portion 5304, imaging data with high resolution can be obtained, and a portable game machine equipped with a higher-function application is provided can do. Note that the portable game machine illustrated in FIG. 11D includes two display portions 5303 and 5304; however, the number of display portions included in the portable game machine is not limited thereto.

This example can be implemented in combination with any of the above embodiment modes or the above examples as appropriate.

100 Touch Panel 101 Pixel Circuit 102 Display Element Control Circuit 103 Photo Sensor Control Circuit 104 Pixel 105 Display Element 106 Photo Sensor 107 Display Element Driver Circuit 108 Display Element Driver Circuit 109 Circuit 110 Photo Sensor Driver Circuit 201 Transistor 202 Retention Capacitor 203 Liquid Crystal Element 204 Photo Diode 205 Transistor 206 Transistor 207 Gate signal line 208 Photodiode reset signal line 209 Gate signal line 210 Video data signal line 211 Photosensor output signal line 212 Photosensor reference signal line 213 Gate signal line 300 Circuit 301 p-type TFT
302 Holding capacitor 303 Precharge signal line 401 Signal 402 Signal 403 Signal 404 Signal 405 Signal 700 Substrate 701 Insulating film 702 Release layer 703 Insulating film 704 Semiconductor film 705 Semiconductor film 706 Semiconductor film 707 Semiconductor film 709 Gate insulating film 710 Electrode 711 Low concentration Impurity region 712 Mask 713 High concentration impurity region 714 Gate insulation film 715 Side wall 716 Mask 717 High concentration impurity region 718 Photodiode 719 n-channel TFT
720 Capacitive element 722 Insulating film 723 Insulating film 725 Conductive film 726 Conductive film 727 Conductive film 728 Conductive film 729 Conductive film 731 Pixel electrode 736 Peeling adhesive 737 Temporary support substrate 738 Peeled layer 744 Substrate 750 Alignment film 751 Sealing material 752 Opposing Electrode 753 Alignment film 754 Substrate 755 Liquid crystal 756 Polarizing plate 760 Liquid crystal element 770 Adhesive 771 Shielding film 772 Color filter 1001 Substrate 1002 Photodiode 1003 Transistor 1004 Holding capacitor 1005 Liquid crystal element 1006 Semiconductor film 1007 Pixel electrode 1008 Liquid crystal 1009 Counter electrode 1010 Conductive film 1011 Alignment film 1012 Alignment film 1013 Substrate 1014 Color filter 1015 Shielding film 1016 Spacer 1017 Polarizing plate 1018 Polarizing plate 1020 Arrow 1021 Detected object 1022 Arrow 601 panel 1602 diffusion plate 1603 prism sheet 1604 diffusion plate 1605 light guide plate 1606 reflector 1607 light source 1608 backlight 1609 circuit board 1610 FPC
1611 FPC
1612 Finger 5001 Case 5002 Display unit 5003 Support base 5101 Case 5102 Display unit 5103 Switch 5104 Switch 5104 Operation key 5105 Infrared port 5201 Case 5202 Display unit 5203 Coin slot 5204 Bill slot 5205 Card slot 5206 Passbook slot 5301 Case 5302 Housing 5303 Display unit 5304 Display unit 5305 Microphone 5306 Speaker 5307 Operation key 5308 Stylus

Claims (13)

A display element, a transistor, and a photodiode between the first substrate and the second substrate;
The transistor and the photodiode are formed on the first substrate;
The touch panel having a thickness of 10 μm to 200 μm. A first substrate and a second substrate facing each other, and a backlight disposed on the second substrate side;
A liquid crystal element, a transistor, and a photodiode between the first substrate and the second substrate;
The transistor and the photodiode are formed on the first substrate;
The first substrate and the second substrate have translucency,
The touch panel having a thickness of 10 μm to 200 μm. A display element, a transistor, and a photodiode between the first substrate and the second substrate;
The transistor and the photodiode are formed on the first substrate;
The touch panel having a thickness of 20 μm to 40 μm. A first substrate and a second substrate facing each other, and a backlight disposed on the second substrate side;
A liquid crystal element, a transistor, and a photodiode between the first substrate and the second substrate;
The transistor and the photodiode are formed on the first substrate;
The first substrate and the second substrate have translucency,
The touch panel having a thickness of 20 μm to 40 μm. A plurality of pixels provided with display elements, transistors and photodiodes between the first substrate and the second substrate;
The transistor and the photodiode are formed on the first substrate;
The touch panel, wherein the first substrate has a thickness of 10 μm or more and less than an interval of the pixels. A first substrate and a second substrate facing each other, and a backlight disposed on the second substrate side;
A plurality of pixels each provided with a liquid crystal element, a transistor, and a photodiode between the first substrate and the second substrate;
The transistor and the photodiode are formed on the first substrate;
The first substrate and the second substrate have translucency,
The touch panel, wherein the first substrate has a thickness of 10 μm or more and less than an interval of the pixels. In any one of Claims 1 thru | or 6,
The touch panel, wherein the first substrate is a plastic substrate. In any one of Claims 1 thru | or 7,
The island-shaped semiconductor film included in the photodiode and the island-shaped semiconductor film included in the transistor are formed by etching one semiconductor film. In any one of Claims 1 thru | or 8,
The transistor and the photodiode are formed on a supporting substrate, and then peeled and bonded to the first substrate. Having a display element, a transistor, and a photodiode on a substrate;
The transistor and the photodiode are formed on a supporting substrate, and then peeled and bonded to the substrate. Forming a transistor and a photodiode on a supporting substrate;
After peeling off the transistor and the photodiode from the support substrate, the transistor and the photodiode are bonded to a first substrate having translucency and having a thickness of 10 μm to 200 μm,
A method for manufacturing a touch panel, in which a liquid crystal element is formed between the first substrate and a light-transmitting second substrate. Forming a transistor and a photodiode on a supporting substrate;
After peeling off the transistor and the photodiode from the support substrate, the transistor and the photodiode are bonded to a first substrate having translucency and a film thickness of 20 μm to 40 μm,
A method for manufacturing a touch panel, in which a liquid crystal element is formed between the first substrate and a light-transmitting second substrate. In claim 11 or claim 12,
The island-shaped semiconductor film included in the photodiode and the island-shaped semiconductor film included in the transistor are formed by etching one semiconductor film over the supporting substrate.

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