JP2011007897A - Electrophoretic display apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electrophoretic display apparatus suppressing reduction of a contrast ratio.SOLUTION: In the electrophoretic display apparatus, including: a first substrate and a second substrate placed facing each other with a predetermined interval; first electrodes arranged on the first substrate; second electrodes arranged on the second substrate; partition walls disposed between the first and second substrates and erected so as to enclose the first electrodes; and solvents severally containing a plurality of particles dispersed therein to be filled up in regions enclosed by the partition walls, the surfaces opposed to the second substrate of the partition walls formed on the first substrate is formed in convex curved surface shapes.

Description

  The present invention relates to an electrophoretic display device.

Conventionally, as an electrophoretic display device, an electrophoretic display device to which an electrophoretic method having a micro partition wall structure is applied is known (for example, see Patent Document 1). For example, as shown in FIG. 8, the electrophoretic display device 100 includes a counter substrate 101 that forms a display surface, and a thin film transistor substrate 102 that is disposed to face the counter substrate 101. A plurality of pixel electrodes 103 arranged in a matrix are electrically connected to an inner surface of the thin film transistor substrate 102 facing the counter substrate 100, surrounding the pixel electrode 103 and electrically connected to the pixel electrode 103 via a thin film transistor (not shown). Signal lines (scanning lines, data lines) 104 are provided. Each signal line 104 is formed with a substantially trapezoidal partition wall 105 in a sectional view standing toward the counter substrate 101, so that the upper region of each pixel electrode 103 is located above the adjacent pixel electrode 103. You will be separated from the area.
On the other hand, on the inner surface of the counter substrate 101 that faces the thin film transistor substrate 102, a counter electrode 106 disposed to face the plurality of pixel electrodes 103 is provided.

  A space formed by the counter substrate 101, the thin film transistor substrate 102, and the partition wall 105 is filled with a solvent 107. A plurality of positively charged black particles 108 and negatively charged white particles 109 are dispersed in the solvent 107.

  When the voltage of the counter electrode 106 is made higher than that of the pixel electrode 103, the white particles 109 move to the counter electrode 106 side and the black particles 108 move to the pixel electrode 103 side, and white is displayed on the display surface. (For example, the state shown in FIG. 8). Conversely, when the voltage of the counter electrode 106 is made smaller than that of the pixel electrode 103, the white particles 109 move to the pixel electrode 103 side and the black particles 108 move to the counter electrode 106 side, and black is displayed on the display surface. It will be. By performing this for each pixel, a predetermined figure or character is drawn on the display surface.

JP 2007-25688 A

Here, when the electrophoretic display device 100 is manufactured, the partition wall 105 is formed after the pixel electrode 103, the signal line 104, and the thin film transistor are formed on the inner surface of the thin film transistor substrate 102. Thereafter, a solvent 107 in which particles 108 and 109 are dispersed is poured into the inner surface of the thin film transistor substrate 102, and the counter substrate 101 on which the counter electrode 106 is formed is overlaid thereon. Due to such a manufacturing process, there is a problem that the particles 108 and 109 remain on the upper surface of the partition wall 103 in the manufacturing process. If the particles 108 and 109 remain on the upper surface of the partition wall 103, particles having a color opposite to the color to be displayed (black particles 108a in FIG. 8) exist between the pixels. It was one of the reasons for the decline.
For this reason, the subject of this invention is providing the electrophoretic display device which suppressed the fall of contrast ratio.

In order to solve the above problems, an electrophoretic display device according to the invention of claim 1 is provided:
A first substrate and a second substrate arranged to face each other at a predetermined interval;
A first electrode provided on the first substrate;
A second electrode provided on the second substrate;
A partition wall disposed between the first substrate and the second substrate and erected so as to surround the first electrode, and
An electrophoretic display device in which a solvent in which a plurality of particles are dispersed is filled in a region surrounded by the partition wall,
The partition formed on the first substrate is characterized in that the surface of the partition facing the second substrate is formed in a convex curved surface.

The invention described in claim 2 is the electrophoretic display device according to claim 1,
The convex curved surface of the partition wall is in contact with the one of the opposing substrates.

The invention described in claim 3 is the electrophoretic display device according to claim 1,
The convex curved surface of the partition wall is formed so as to have a predetermined interval between the one substrate facing each other.

The invention according to claim 4 is the electrophoretic display device according to claim 3,
An interval between the convex curved surface of the partition and the one substrate facing each other is set to be smaller than the diameter of the smaller one of the two types of particles.

The invention according to claim 5 is the electrophoretic display device according to any one of claims 1 to 4,
The plurality of particles are two types of particles having different surface polarities and colors.

The invention described in claim 6 is the electrophoretic display device according to claim 5,
The two types of particles are black particles and white particles.

The invention according to claim 7 is the electrophoretic display device according to claim 5 or 6,
The solvent is a dispersion medium having a lower dielectric constant than the two kinds of particles.

The invention according to claim 8 is the electrophoretic display device according to any one of claims 1 to 7,
A plurality of pixel electrodes as the first electrode provided in a matrix on the first substrate;
A plurality of thin film transistors provided on the first substrate so as to be individually electrically connected to each of the plurality of pixel electrodes;
A scanning line provided on the first substrate so as to extend in a row direction of the plurality of thin film transistors;
A data line provided on the first substrate so as to extend in a column direction of the plurality of thin film transistors, individually surrounding the pixel electrodes together with the scanning lines, and connected to the plurality of thin film transistors;
The second substrate is provided with a counter electrode as the second electrode provided to face the pixel electrode,
The partition wall is erected on the scanning line and the data line in order to individually separate a plurality of pixels including the pixel electrode.

The invention according to claim 9 is the electrophoretic display device according to claim 8,
An antireflection film is formed on the first substrate so as to correspond to the partition, and the wiring is formed in a layer between the partition and the antireflection film.

  ADVANTAGE OF THE INVENTION According to this invention, the electrophoretic display device which suppressed the fall of contrast ratio can be provided.

It is sectional drawing which showed typically the principal part structure of the electrophoretic display device of this embodiment. It is sectional drawing which shows the principal part structure of the thin-film transistor substrate with which the electrophoretic display device of FIG. 1 is equipped, and is sectional drawing seen from the II-II cutting line in FIG. FIG. 2 is a transmission plan view illustrating a configuration of a main part of a thin film transistor substrate provided in the electrophoretic display device of FIG. 1. FIG. 7 is an explanatory diagram showing a manufacturing process of the electrophoretic display device of FIG. 1. FIG. 7 is an explanatory diagram showing a manufacturing process of the electrophoretic display device of FIG. 1. It is a disassembled perspective view showing schematic structure of the film for partition for forming the partition with which the electrophoretic display device of FIG. 1 is equipped. It is sectional drawing which showed typically the modification of the electrophoretic display device of this embodiment. It is sectional drawing which showed typically the principal part structure of the conventional electrophoretic display device.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, although various technically preferable limitations for carrying out the present invention are given to the embodiments described below, the scope of the invention is not limited to the following embodiments and illustrated examples.

  FIG. 1 is a cross-sectional view schematically showing a main configuration of the electrophoretic display device of the present embodiment. As shown in FIG. 1, the electrophoretic display device 1 includes a thin film transistor substrate disposed to face the counter substrate 10 at a predetermined interval by a counter substrate 10 and a partition wall 60 having an upper surface 60 b formed in a convex curved surface. 20 is provided. The counter substrate 10 is a second substrate, and the thin film transistor substrate 20 is a first substrate. A space is formed between the counter substrate 10 and the thin film transistor substrate 20 by a frame-shaped sealing material (not shown), and a space is formed between the pair of substrates 10 and 20 using the partition wall 60 as a spacer. In this space, a solvent 70 in which black particles 71 and white particles 72 are dispersed is enclosed.

  The counter substrate 10 is made of, for example, a glass substrate. A counter electrode 11 is laminated on the inner surface of the counter substrate 10 facing the thin film transistor substrate 20. The counter electrode 11 is made of, for example, ITO (Indium Tin Oxide).

In the solvent 70, a plurality of two types of particles having different surface polarities and colors are dispersed. Of the two types of particles, one type is a positively charged black particle 71 made of, for example, carbon, and the other type is a negatively charged white particle 72 made of, for example, TiO ₂ (titanium oxide). Here, the diameter of the black particles 71 is 5.0 μm or less, and the diameter of the white particles 72 is 0.3 μm or less. As the solvent 70, a dispersion medium having a dielectric constant lower than that of the black particles 71 and the white particles 72 is used.

  Next, the thin film transistor substrate 20 will be described in detail with reference to FIGS. FIG. 3 is a transmission plan view showing the main configuration of the thin film transistor substrate 20. 2 is a cross-sectional view taken along the line II-II in FIG.

  First, a planar structure of the thin film transistor substrate 20 will be described with reference to FIG. The thin film transistor substrate 20 is made of glass or the like, and a plurality of scanning lines 22 and a plurality of data lines 23 are formed on the upper surface so as to intersect each other. In this case, the plurality of scanning lines 22 are provided extending in the row direction, and the plurality of data lines 23 are provided extending in the column direction.

  On each thin film transistor substrate 20, a substantially rectangular pixel electrode 24 with a part cut away is provided in each region surrounded by the scanning line 22 and the data line 23. Thereby, the plurality of pixel electrodes 24 are arranged in a matrix on the thin film transistor substrate 20. A thin film transistor 25 as a switching element is disposed in the notch 241 of each pixel electrode 24. The pixel electrode 24 is electrically connected to the scanning line 22 and the data line 23 through the thin film transistor 25.

  A partition wall 60 is formed on the scanning line 22 and the data line 23 so as to stand toward the counter substrate 10. By the partition wall 60, a plurality of pixels including the pixel electrode 24 are individually separated.

  A plurality of auxiliary capacitance lines 26 are provided on the thin film transistor substrate 20. The auxiliary capacitance line 26 is formed so as to overlap three sides excluding the lower side of the pixel electrode 24 in the drawing.

Next, a cross-sectional structure of the thin film transistor substrate 20 will be described.
As shown in FIG. 2, an antireflection film 80 made of CrO ₂ (chromium oxide) is formed on the inner surface of the thin film transistor substrate 20 facing the counter substrate 10 so as to face the scanning line 22 and the data line 23. ing. The antireflection film 80 is formed wider than the region where the scanning lines 22 and the data lines 23 are formed. The antireflection film 80 may be formed of a photosensitive resin such as photosensitive black polyimide other than CrO ₂ .

On the inner surface side of the thin film transistor substrate 20, a gate electrode 29 made of Cr (chromium) or the like and a scanning line 22 connected to the gate electrode 29 are formed at predetermined positions. The gate electrode 29 and the scanning line 22 are formed on the antireflection film 80. The gate electrode 29 is disposed at a location forming the thin film transistor 25. In addition, a gate wiring 29a made of Cr or the like and an auxiliary capacitance line 26 made of ITO (indium tin oxide) or the like covering the gate wiring 29a are formed at other predetermined locations on the inner surface side of the thin film transistor substrate 20. . The gate wiring 29a is formed on the antireflection film 80, and the auxiliary capacitance line 26 is formed so as to cover both the gate wiring 29a and the antireflection film 80.
In addition, a gate insulating film 30 made of, for example, silicon oxide or silicon nitride is formed on the thin film transistor substrate 20 so as to cover the gate electrode 29, the scanning line 22, and the auxiliary capacitance line 26. As a result, the gate electrode 29 is disposed on the lower layer side of the gate insulating film 30.

  A semiconductor thin film 31 made of a semiconductor such as intrinsic amorphous silicon is formed above the gate electrode 29 on the upper surface of the gate insulating film 30. A channel protective film 32 made of silicon nitride or the like is provided at substantially the center of the upper surface of the semiconductor thin film 31. Ohmic contact layers 33 and 34 made of n-type amorphous silicon or the like are provided on both sides of the upper surface of the channel protective film 32 and the upper surface of the semiconductor thin film 31 on both sides thereof.

  On the upper surfaces of the ohmic contact layers 33 and 34, a source electrode 35 and a drain electrode 36 made of, for example, Cr are provided. As a result, the source electrode 35 and the drain electrode 36 are disposed on the upper layer side of the gate insulating film 30. Here, the thin film transistor 25 is an inverted stagger type, and includes a gate electrode 29, a gate insulating film 30, a semiconductor thin film 31, a channel protective film 32, ohmic contact layers 33 and 34, a source electrode 35 and a drain electrode 36. .

  A semiconductor thin film 37 made of a semiconductor such as intrinsic amorphous silicon is also formed in the formation region of the data line 23 on the upper surface of the gate insulating film 30. An ohmic contact layer 38 made of n-type amorphous silicon or the like is provided on the upper surface of the semiconductor thin film 37. A drain film 39 made of chromium or the like is formed on the upper surface of the ohmic contact layer 38. This drain film 39 forms the data line 23.

  An overcoat film 50 as an interlayer insulating film made of silicon oxide or the like is formed on the thin film transistor 25 and the data line 23 so as to cover the thin film transistor 25 and the data line 23. A contact hole 40 is formed on the upper surface of the source electrode 35 in the overcoat film 50. Specifically, the contact hole 40 is formed on the upper surface of a portion of the source electrode 35 that is separated from the channel protective film 32.

  As shown in FIGS. 2 and 3, a transparent pixel electrode 24 made of ITO or the like is provided at a predetermined position on the upper surface of the overcoat film 50 through the contact hole 40, the source electrode 35, the auxiliary capacitance line 26, and the like. Are electrically connected.

  In the thin film transistor substrate 20, a partition wall 60 standing from the scanning line 22 and the data line 23 toward the counter substrate 10 is formed of a photosensitive resin such as photosensitive acrylic. The bottom 60 a of the partition wall 60 is formed wider than the widths of the lines 22 and 23 so as to cover the scanning lines 22 and the data lines 23. In addition, the partition wall 60 is formed in a tapered shape whose width gradually decreases toward the top. The upper surface 60b of the partition wall 60, that is, the surface facing the counter substrate 10 is formed as a convex curved surface. The tip of the upper surface 60 b of the partition wall 60 is in contact with the counter substrate 10.

Next, a manufacturing method of the electrophoretic display device 1 will be described with reference to FIGS.
First, as shown in FIG. 4A, a chromium oxide film is formed at a predetermined position on the inner surface of the thin film transistor substrate 20 to form an antireflection film 80.
Then, as shown in FIG. 4B, Cr is deposited at a predetermined location of the antireflection film 80 to form the gate electrode 29, the scanning line 22, and the gate wiring 29a.

Thereafter, as shown in FIG. 4C, an ITO film is formed so as to cover the gate wiring 29a, and the auxiliary capacitance line 26 is formed.
Next, as shown in FIG. 4D, for example, silicon oxide or silicon nitride is formed to cover the gate electrode 29, the scanning line 22, and the auxiliary capacitance line 26, thereby forming the gate insulating film 30. After the gate insulating film 30 is formed, an intrinsic amorphous silicon 31a is formed on the upper surface thereof. Further, after the formation of the intrinsic amorphous silicon 31a, a channel protective film 32 is formed by depositing silicon nitride or the like at a predetermined position on the upper surface thereof.

  Further, as shown in FIG. 5A, unnecessary portions of the intrinsic amorphous silicon 31a are removed by using a well-known etching method or the like, and semiconductor thin films 31 and 37 are formed. After the removal, n-type amorphous silicon or the like is formed at a predetermined location to form ohmic contact layers 33, 34, and 38, and Cr is formed on the ohmic contact layers 33, 34, and 38 to form a source. An electrode 35, a drain electrode 36, and a drain film 39 are formed. Thereby, the thin film transistor 25 and the data line 23 are formed.

As shown in FIG. 5B, an overcoat film 50 is formed by depositing silicon oxide or the like on the upper layer side of the thin film transistor 25 and the data line 23. Thereafter, a predetermined portion of the overcoat film 50 is removed by a known etching method to form a contact hole 40.
Then, as shown in FIG. 5C, ITO is formed at a predetermined location on the upper surface of the overcoat film 50 to form the pixel electrode 24.

When the thin film transistor substrate 20 is completed, a partition wall 60 is formed on the thin film transistor substrate 20. Specifically, the partition wall 60 is formed using the partition wall film 61 shown in FIG. Although FIG. 6 shows a state where each layer is peeled off, the partition film 61 is actually formed by laminating a support film 62, a resist film 63, and a cover film 64. For example, the support film 62 is formed from a resin film such as PET, and the cover film 64 is formed from a resin film such as OPP. The resist film 63 is formed of a photosensitive resin such as photosensitive acrylic forming the partition wall 60. A support film 62 is attached to one surface, and a cover film 64 is attached to the other surface.
In order to form the partition wall 60 using the partition wall film 61, first, the cover film 64 is peeled off, and the resist film 63 is bonded onto the thin film transistor substrate 20. The resist film 63 is exposed in this state, and the photosensitive acrylic is transferred to a predetermined position on the thin film transistor substrate 20. After the transfer, the support film 62 is peeled off, and then the resist film 63 is developed to remove portions other than those transferred to the thin film transistor substrate 20. Then, the photosensitive acrylic transferred onto the thin film transistor substrate 20 is post-baked to improve the adhesion, whereby the partition wall 60 is formed as shown in FIG.
In addition, in order to make the upper surface 60b of the partition wall 60 a convex curved surface, when the partition wall 60 is formed, by performing overexposure or overetching, the upper corner of the partition wall 60 is removed and the upper surface 60b is convex. It becomes.

After the partition wall 60 is formed, a solvent 70 in which a plurality of black particles 71 and white particles 72 are dispersed is injected into a plurality of regions surrounded by the partition wall 60. Here, when the solvent 70 is injected, the black particles 71 and the white particles 72 that are likely to be placed on the partition wall 60 flow downward along the curved surface of the upper surface 60 b of the partition wall 60. Thereby, the amount of particles remaining in the upper part of the partition wall 60 is reduced.
After the implantation, the counter substrate 10 is arranged on the thin film transistor substrate 20 so that the counter electrode 11 and the pixel electrode 24 face each other, and is bonded and sealed with a frame-shaped sealing material (not shown). Also here, when the solvent 70 is injected, the black particles 71 and the white particles 72 placed on the partition wall 60 are excluded along the curved surface 60 b in the process of contacting the partition wall 60 and the inner surface of the counter substrate 10, and the black particle 71. The white particles 72 having a smaller particle diameter are only slightly sandwiched between the front end of the curved surface of the upper surface 60 b of the partition wall 60 and the counter substrate 10 and remain. Thereby, the partition wall 60 and the counter substrate 10 come into contact with each other (see FIG. 1).

Next, the operation of the electrophoretic display device 1 of the present embodiment will be described. In the electrophoretic display device 1, the display surface is the outer surface 20a of the thin film transistor substrate 20, and the viewing direction is the arrow direction in FIG.
When the voltage of the counter electrode 11 is made higher than that of the pixel electrode 24, the white particles 72 move to the counter electrode 11 side and the black particles 71 move to the pixel electrode 24 side, and black is displayed on the display surface. (For example, the state shown in FIG. 1). Conversely, when the voltage of the counter electrode 11 is made smaller than that of the pixel electrode 24, the white particles 72 move to the pixel electrode 24 side and the black particles 71 move to the counter electrode 11 side, and white is displayed on the display surface. It will be. By performing this for each pixel, a predetermined figure or character is drawn on the display surface.

By the way, as described above, the black particles 71 and the white particles 72 hardly remain on the upper surface 60b of the partition wall 60 after the manufacture, but the black particles 71 on the upper surface 60b of the partition wall 60 are small as shown in FIG. The white particles 72 remain and are sandwiched between the counter substrates 10. In the electrophoretic display device 1, since the outer surface 20 a of the thin film transistor substrate 20 is a display surface, even if particles having a color opposite to the color to be displayed (white particles 72 in FIG. 1) exist between the pixels. The particles can be prevented from being observed from the display surface, and the contrast ratio can be prevented from decreasing.
In general, when the outer surface 20a of the thin film transistor substrate 20 is used as a display surface, the scanning line 22 and the data line 23 cause specular reflection, and the reflection becomes intense. For this reason, in the electrophoretic display device 1 of the present embodiment, the antireflection film 80 is interposed between the scan line 22 and the data line 23 and the thin film transistor substrate 20 so as to overlap the scan line 22 and the data line 23. Therefore, even when viewed from the display surface side, the above-described reflection can be prevented.

  As described above, according to the present embodiment, it is possible to provide the electrophoretic display device 1 that can prevent a reduction in contrast ratio while suppressing reflection.

  In addition, since the antireflection film 80 is formed wider than the area where the scanning lines 22 and the data lines 23 are formed, even if the scanning lines 22 and the data lines 23 are misaligned, the antireflection film is surely formed. 80 can cover the display surface side.

  Further, since the upper surface 60b of the partition wall 60 and the counter substrate 10 are in contact with each other, the particles 71 and 72 are less likely to remain on the upper surface 60b of the partition wall 60, and the distance between the counter substrate 10 and the thin film transistor substrate 20 is kept constant. Therefore, unevenness in contrast between pixels can be suppressed.

Note that the present invention is not limited to the above embodiment, and can be modified as appropriate.
For example, in the present embodiment, the case where the upper surface 60b of the partition wall 60 and the counter substrate 10 are in contact with each other has been described as an example. However, even if the upper surface 60b of the partition wall 60 and the counter substrate 10 are spaced apart from each other. Good. In this case, the distance between the upper surface 60b of the partition wall 60 and the counter substrate 10 is set to be smaller than the diameter of the smaller one of the two types of particles 71 and 72 (white particles 72 in the present embodiment). Is preferred. Thereby, the particles 71 and 72 are less likely to remain on the upper surface 60b of the partition wall 60, and the reduction in contrast ratio can be further suppressed. In order to leave a predetermined interval, a spacer (beads or the like) having a predetermined particle diameter larger than the height of the partition wall 60 may be mixed with the sealant.

In the present embodiment, the case where the counter substrate 10 and the thin film transistor substrate 20 are formed from a glass substrate has been described as an example. However, at least one of the substrates 10 and 20 is formed from a flexible substrate such as a PET substrate. May be. For example, considering the case where the counter substrate 10 is a flexible substrate, the flow path opens between the partition wall 60 and the counter substrate 10 due to the bending of the counter substrate 10. This is a phenomenon that occurs remarkably when the electrophoretic display device is stood. At the time of this phenomenon, as shown in FIG. 8, in the conventional electrophoretic display device 100, a large amount of black particles 108a having a particle diameter larger than the gap serving as the flow path remain in the upper part of the partition wall 105, and black display is performed. There was a problem that unevenness and streaks occurred. However, in the electrophoretic display device 1 of the present embodiment, since the upper surface 60b of the partition wall 60 is a convex curved surface as shown in FIG. 1, the particles 71 and 72 themselves remain between the pixels above the partition wall 60. It is difficult to do. Thereby, even when at least one of the pair of substrates 10 and 20 is formed of a flexible substrate, it is possible to suppress the occurrence of black display unevenness and stripes.
If both the counter substrate 10 and the thin film transistor substrate 20 are formed of a flexible substrate, it is possible to suppress the occurrence of black display unevenness and black stripes even in an electrophoretic display device in which the entire display portion is flexible. .

  In the electrophoretic display device 1 of the present embodiment, the case where the display surface is the outer surface 20a of the thin film transistor substrate 20 is illustrated. However, for example, the display surface is the same as that of the counter substrate 10 as in the electrophoretic display device 1A illustrated in FIG. It is good also as the outer surface 10a. Even in such a case, since the particles 71 and 72 hardly remain between the partition wall 60 and the counter substrate 10, particles having a color opposite to the color desired to be displayed (black particles 71 in FIG. 7) are present between the pixels. It becomes difficult to exist. Therefore, even if the outer surface 10a of the counter substrate 10 is used as a display surface, a reduction in contrast ratio can be suppressed. Further, when the outer surface 10a of the counter substrate 10 is used as a display surface, the scanning lines 22 and the data lines 23 are on the back surface side, so that it is not necessary to consider the specular reflection of these lines 22 and 23. That is, the antireflection film 80 can be omitted, and the manufacturing cost can be reduced.

1 Electrophoretic display device 10 Counter substrate (second substrate)
10a outer surface 11 counter electrode (second electrode)
20 Thin film transistor substrate (first substrate)
20a outer surface 22 scanning line 23 data line 24 pixel electrode (first electrode)
25 Thin Film Transistor 26 Auxiliary Capacitor Line 29 Gate Electrode 29a Gate Wiring 30 Gate Insulating Film 31 Semiconductor Thin Film 31a Intrinsic Amorphous Silicon 32 Channel Protection Film 33, 34 Ohmic Contact Layer 35 Source Electrode 36 Drain Electrode 37 Semiconductor Thin Film 38 Ohmic Contact Layer 39 Drain Film 40 Contact hole 50 Overcoat film 60 Partition 60a Bottom side 60b Upper surface (convex curved surface)
61 Film for partition 62 Support film 63 Resist film 64 Cover film 70 Solvent 71 Black particle 72 White particle 80 Antireflection film 241 Notch

Claims (9)

A first substrate and a second substrate arranged to face each other at a predetermined interval;
A first electrode provided on the first substrate;
A second electrode provided on the second substrate;
A partition wall disposed between the first substrate and the second substrate and erected so as to surround the first electrode, and
An electrophoretic display device in which a solvent in which a plurality of particles are dispersed is filled in a region surrounded by the partition wall,
The electrophoretic display device, wherein the partition wall formed on the first substrate has a convex curved surface on the surface of the partition wall facing the second substrate.   The electrophoretic display device according to claim 1, wherein a convex curved surface of the partition wall is in contact with the one of the opposing substrates.   2. The electrophoretic display device according to claim 1, wherein the convex curved surface of the partition is formed so as to be spaced apart from the one of the opposing substrates.   The distance between the convex curved surface of the partition and the one substrate facing each other is set smaller than the diameter of the smaller one of the two types of particles. The electrophoretic display device described.   The electrophoretic display device according to claim 1, wherein the plurality of particles are two types of particles having different surface polarities and colors.   6. The electrophoretic display device according to claim 5, wherein the two kinds of particles are black particles and white particles.   The electrophoretic display device according to claim 5, wherein the solvent is a dispersion medium having a lower dielectric constant than the two types of particles. A plurality of pixel electrodes as the first electrode provided in a matrix on the first substrate;
A plurality of thin film transistors provided on the first substrate so as to be individually electrically connected to each of the plurality of pixel electrodes;
A scanning line provided on the first substrate so as to extend in a row direction of the plurality of thin film transistors;
A data line provided on the first substrate so as to extend in a column direction of the plurality of thin film transistors, individually surrounding the pixel electrodes together with the scanning lines, and connected to the plurality of thin film transistors;
The second substrate is provided with a counter electrode as the second electrode provided to face the pixel electrode,
8. The partition wall according to claim 1, wherein the partition wall is erected on the scan line and the data line in order to individually separate a plurality of pixels including the pixel electrode. 9. Electrophoretic display device.   9. The antireflection film is formed on the first substrate so as to correspond to the partition wall, and the wiring is formed in a layer between the partition wall and the antireflection film. Electrophoretic display device.

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