JP2010529656A5 - - Google Patents

Claims (14)

An apparatus for use in plasma processing of a workpiece having an outer periphery,
Ri consists removable material by plasma, a when placed in juxtaposed relationship sacrificial comprising a plurality of sections which are arranged so as to have an annular geometry, wherein the plurality of sections the workpiece An apparatus comprising a sacrificial body adapted to be concentrically arranged around the outer periphery of the workpiece such that the outer diameter of the workpiece is effectively increased.   The apparatus of claim 1, wherein the sacrificial body comprises an organic polymer.   The apparatus of claim 2, wherein the organic polymer is polyetheretherketone (PEEK), polyimide or polyamide.   The apparatus of claim 1, wherein the sacrificial body is made of a material that is similar in composition to the material that forms part of the workpiece that is exposed to plasma. The apparatus of claim 1, wherein the sacrificial body has an inner diameter substantially equal to an outer diameter of the outer peripheral edge of the workpiece. An apparatus for plasma processing a workpiece having an outer peripheral edge and a first surface and a second surface connected by the outer peripheral edge,
A vacuum enclosure configured to contain plasma, wherein the first surface of the workpiece is in contact with and supported by the second surface of the workpiece when exposed to plasma. A vacuum housing, including a support pedestal,
Ri consists removable material by plasma, a sacrificial material comprising a first and second sections are arranged to have a geometry when positioned annular in juxtaposed relationship, first and second A sacrificial body wherein two sections are arranged concentrically around the outer periphery of the workpiece supported on the support pedestal so that the outer diameter of the workpiece is effectively increased A device comprising:   The apparatus further includes a wafer lift mechanism disposed in the vacuum casing, the wafer lift mechanism including a wafer fixture, and the wafer fixture holds the workpiece in a relationship that does not contact the support base. The wafer fixture is movable between a first position and a second position in which the wafer fixture is disposed in contact with the second pedestal of the workpiece, the first of the sacrificial bodies. The apparatus of claim 6, wherein a section is carried by the wafer fixture.   The second section is mounted adjacent to the support pedestal and remains stationary as the wafer fixture moves between the first position and the second position. The device described in 1.   The apparatus of claim 6, wherein the sacrificial body comprises an organic polymer.   The apparatus of claim 9, wherein the organic polymer is polyetheretherketone (PEEK), polyimide or polyamide.   The apparatus of claim 6, wherein the sacrificial body is made of a material that is similar in composition to the material that forms part of the workpiece that is exposed to plasma. The apparatus of claim 6, wherein the sacrificial body has an inner diameter substantially equal to an outer diameter of the outer peripheral edge of the workpiece. A method of plasma etching a workpiece having a first surface, a second surface, and an outer peripheral edge connecting the first surface and the second surface,
Wherein around the outer periphery of the workpiece, Ri consists capable material removal by the plasma, disposed is the placing a sacrificial material which is divided into a plurality of sections defining an annular geometry,
Temporarily supporting the workpiece on a wafer lift mechanism disposed in a vacuum housing;
Moving the wafer lift mechanism to convey the workpiece from the wafer lift mechanism to a support pedestal;
Aligning at least one of the sections of the sacrificial body and at least another section of the section of the sacrificial body when transporting the work piece, Aligning to define a geometric shape;
Exposing the first surface of the workpiece and the sacrificial body to plasma and shifting a maximum etch rate from a position on the first surface of the workpiece to a different position on the sacrificial body. Including a method. 14. The method of claim 13, further comprising: eroding the sacrificial material by exposing it to plasma; and replacing the sacrificial body with another sacrificial body after sufficient sacrificial erosion has occurred. the method of.