JP2010529656A5 - - Google Patents
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- JP2010529656A5 JP2010529656A5 JP2010510438A JP2010510438A JP2010529656A5 JP 2010529656 A5 JP2010529656 A5 JP 2010529656A5 JP 2010510438 A JP2010510438 A JP 2010510438A JP 2010510438 A JP2010510438 A JP 2010510438A JP 2010529656 A5 JP2010529656 A5 JP 2010529656A5
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- sacrificial
- plasma
- sacrificial body
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 210000002381 Plasma Anatomy 0.000 claims 11
- 239000000463 material Substances 0.000 claims 10
- 230000002093 peripheral Effects 0.000 claims 5
- 239000004696 Poly ether ether ketone Substances 0.000 claims 4
- 229920000620 organic polymer Polymers 0.000 claims 4
- 229920002530 poly[4-(4-benzoylphenoxy)phenol] polymer Polymers 0.000 claims 4
- 239000004952 Polyamide Substances 0.000 claims 2
- 229920001721 Polyimide Polymers 0.000 claims 2
- 239000004642 Polyimide Substances 0.000 claims 2
- 230000003628 erosive Effects 0.000 claims 2
- 229920002647 polyamide Polymers 0.000 claims 2
- 239000011528 polyamide (building material) Substances 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 1
Claims (14)
プラズマによって除去可能な材料から成り、並置した関係で配置されると環状の幾何学的形状を有するように配置される複数のセクションを含む犠牲体であって、前記複数のセクションが前記加工物の外径が効果的に増大するように該加工物の前記外周縁の周りに同心配置されるようになっている犠牲体を備える、装置。 An apparatus for use in plasma processing of a workpiece having an outer periphery,
Ri consists removable material by plasma, a when placed in juxtaposed relationship sacrificial comprising a plurality of sections which are arranged so as to have an annular geometry, wherein the plurality of sections the workpiece An apparatus comprising a sacrificial body adapted to be concentrically arranged around the outer periphery of the workpiece such that the outer diameter of the workpiece is effectively increased.
プラズマを収容するように構成されている真空筐体であって、前記加工物の前記第1の面がプラズマに暴露されるときに、前記加工物の前記第2の面と接触して支持するようになっている支持台座を含む、真空筐体と、
プラズマによって除去可能な材料から成り、並置した関係で配置されると環状の幾何学的形状を有するように配置される第1及び第2のセクションを含む犠牲体であって、第1及び第2のセクションが、前記前記加工物の外径が効果的に増大するように、前記支持台座上で支持される前記加工物の前記外周縁の周りに同心配置されるようになっている犠牲体とを備える、装置。 An apparatus for plasma processing a workpiece having an outer peripheral edge and a first surface and a second surface connected by the outer peripheral edge,
A vacuum enclosure configured to contain plasma, wherein the first surface of the workpiece is in contact with and supported by the second surface of the workpiece when exposed to plasma. A vacuum housing, including a support pedestal,
Ri consists removable material by plasma, a sacrificial material comprising a first and second sections are arranged to have a geometry when positioned annular in juxtaposed relationship, first and second A sacrificial body wherein two sections are arranged concentrically around the outer periphery of the workpiece supported on the support pedestal so that the outer diameter of the workpiece is effectively increased A device comprising:
前記加工物の前記外周縁の周りに、プラズマによって除去可能な材料から成り、配置されると環状の幾何学的形状を画定する複数のセクションに分割された犠牲体を配置すること、
前記加工物を、真空筐体内に配置されているウエハリフト機構上で一時的に支持すること、
前記ウエハリフト機構を移動させて前記加工物を該ウエハリフト機構から支持台座へ搬送すること、
前記加工物を搬送するとき、前記犠牲体の前記セクションのうちの少なくとも一方と該犠牲体の該セクションのうちの少なくとも別のセクションとを位置合わせすることであって、実質的に連続する環状の幾何学的形状を画定するため位置合わせすること、
前記加工物の前記第1の面及び前記犠牲体をプラズマに暴露すること、並びに
最大エッチング速度を、前記加工物の前記第1の面上の位置から前記犠牲体上の異なる位置へシフトすることを含む、方法。 A method of plasma etching a workpiece having a first surface, a second surface, and an outer peripheral edge connecting the first surface and the second surface,
Wherein around the outer periphery of the workpiece, Ri consists capable material removal by the plasma, disposed is the placing a sacrificial material which is divided into a plurality of sections defining an annular geometry,
Temporarily supporting the workpiece on a wafer lift mechanism disposed in a vacuum housing;
Moving the wafer lift mechanism to convey the workpiece from the wafer lift mechanism to a support pedestal;
Aligning at least one of the sections of the sacrificial body and at least another section of the section of the sacrificial body when transporting the work piece, Aligning to define a geometric shape;
Exposing the first surface of the workpiece and the sacrificial body to plasma and shifting a maximum etch rate from a position on the first surface of the workpiece to a different position on the sacrificial body. Including a method.
前記犠牲体の十分な侵食が起こった後で該犠牲体を別の犠牲体と交換することをさらに含む、請求項13に記載の方法。 14. The method of claim 13, further comprising: eroding the sacrificial material by exposing it to plasma; and replacing the sacrificial body with another sacrificial body after sufficient sacrificial erosion has occurred. the method of.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94151807P | 2007-06-01 | 2007-06-01 | |
US12/125,335 US20080296261A1 (en) | 2007-06-01 | 2008-05-22 | Apparatus and methods for improving treatment uniformity in a plasma process |
PCT/US2008/064670 WO2008150739A1 (en) | 2007-06-01 | 2008-05-23 | Apparatus and methods for improving treatment uniformity in a plasma process |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010529656A JP2010529656A (en) | 2010-08-26 |
JP2010529656A5 true JP2010529656A5 (en) | 2011-07-07 |
Family
ID=40086939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010510438A Pending JP2010529656A (en) | 2007-06-01 | 2008-05-23 | Apparatus and method for improving processing uniformity of plasma process |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080296261A1 (en) |
JP (1) | JP2010529656A (en) |
KR (1) | KR20100025515A (en) |
CN (1) | CN101681785B (en) |
DE (1) | DE112008001482T5 (en) |
TW (1) | TW200905777A (en) |
WO (1) | WO2008150739A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101410706B1 (en) | 2006-08-22 | 2014-06-25 | 노드슨 코포레이션 | Apparatus and methods for handling workpieces in a processing system |
US8372238B2 (en) | 2008-05-20 | 2013-02-12 | Nordson Corporation | Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes |
KR20110042052A (en) * | 2008-06-11 | 2011-04-22 | 솔라 임플란트 테크놀로지스 아이엔씨. | Solar cell fabrication with faceting and ion implantation |
US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
EP2777069A4 (en) | 2011-11-08 | 2015-01-14 | Intevac Inc | Substrate processing system and method |
CN103165374B (en) * | 2011-12-08 | 2017-05-10 | 中微半导体设备(上海)有限公司 | Plasma processing device and edge ring applied to the same |
US9385017B2 (en) * | 2012-08-06 | 2016-07-05 | Nordson Corporation | Apparatus and methods for handling workpieces of different sizes |
MY178951A (en) | 2012-12-19 | 2020-10-23 | Intevac Inc | Grid for plasma ion implant |
JP7451490B2 (en) * | 2018-07-30 | 2024-03-18 | ノードソン コーポレーション | System for processing workpieces using plasma |
CN113035680B (en) * | 2019-12-24 | 2024-06-14 | 中微半导体设备(上海)股份有限公司 | Leveling mechanism for vacuum equipment and plasma treatment device |
CN111180370A (en) * | 2020-02-21 | 2020-05-19 | 北京北方华创微电子装备有限公司 | Wafer bearing tray and semiconductor processing equipment |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US4786359A (en) * | 1987-06-24 | 1988-11-22 | Tegal Corporation | Xenon enhanced plasma etch |
JPH0373524A (en) * | 1989-08-14 | 1991-03-28 | Fujitsu Ltd | Etching |
US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
US20010049196A1 (en) * | 1997-09-09 | 2001-12-06 | Roger Patrick | Apparatus for improving etch uniformity and methods therefor |
US6074488A (en) * | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
US6014979A (en) * | 1998-06-22 | 2000-01-18 | Applied Materials, Inc. | Localizing cleaning plasma for semiconductor processing |
DE29813326U1 (en) * | 1998-07-29 | 1998-12-10 | PROTEC Gesellschaft für Werkstoff- und Oberflächentechnik mbH, 57234 Wilnsdorf | Improved device for protecting electrostatic holding systems in systems for processing wafers |
JP2000299305A (en) * | 1999-04-16 | 2000-10-24 | Toshiba Corp | Plasma treatment system |
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
JP2003100713A (en) * | 2001-09-26 | 2003-04-04 | Kawasaki Microelectronics Kk | Cover for plasma electrode |
US6776849B2 (en) * | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
KR100610010B1 (en) * | 2004-07-20 | 2006-08-08 | 삼성전자주식회사 | Apparatus for |
KR100674922B1 (en) * | 2004-12-02 | 2007-01-26 | 삼성전자주식회사 | Wafer supporting apparatus having cooling path for cooling focus ring |
KR101410706B1 (en) * | 2006-08-22 | 2014-06-25 | 노드슨 코포레이션 | Apparatus and methods for handling workpieces in a processing system |
-
2008
- 2008-05-22 US US12/125,335 patent/US20080296261A1/en not_active Abandoned
- 2008-05-23 KR KR1020097024756A patent/KR20100025515A/en not_active Application Discontinuation
- 2008-05-23 WO PCT/US2008/064670 patent/WO2008150739A1/en active Application Filing
- 2008-05-23 DE DE112008001482T patent/DE112008001482T5/en not_active Withdrawn
- 2008-05-23 CN CN2008800184440A patent/CN101681785B/en not_active Expired - Fee Related
- 2008-05-23 JP JP2010510438A patent/JP2010529656A/en active Pending
- 2008-05-30 TW TW097120323A patent/TW200905777A/en unknown
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