JP2010528286A5 - - Google Patents

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Publication number
JP2010528286A5
JP2010528286A5 JP2010509404A JP2010509404A JP2010528286A5 JP 2010528286 A5 JP2010528286 A5 JP 2010528286A5 JP 2010509404 A JP2010509404 A JP 2010509404A JP 2010509404 A JP2010509404 A JP 2010509404A JP 2010528286 A5 JP2010528286 A5 JP 2010528286A5
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JP
Japan
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JP2010509404A
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JP2010528286A (ja
JP5230730B2 (ja
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Priority claimed from US11/805,907 external-priority patent/US20110073982A1/en
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Publication of JP2010528286A publication Critical patent/JP2010528286A/ja
Publication of JP2010528286A5 publication Critical patent/JP2010528286A5/ja
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Publication of JP5230730B2 publication Critical patent/JP5230730B2/ja
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JP2010509404A 2007-05-25 2008-05-23 裏面照射型線形センサーを使用する検査システム Active JP5230730B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/805,907 US20110073982A1 (en) 2007-05-25 2007-05-25 Inspection system using back side illuminated linear sensor
US11/805,907 2007-05-25
PCT/US2008/006654 WO2008153770A2 (en) 2007-05-25 2008-05-23 Inspection system using back side illuminated linear sensor

Publications (3)

Publication Number Publication Date
JP2010528286A JP2010528286A (ja) 2010-08-19
JP2010528286A5 true JP2010528286A5 (ja) 2011-07-07
JP5230730B2 JP5230730B2 (ja) 2013-07-10

Family

ID=40130382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010509404A Active JP5230730B2 (ja) 2007-05-25 2008-05-23 裏面照射型線形センサーを使用する検査システム

Country Status (3)

Country Link
US (1) US20110073982A1 (ja)
JP (1) JP5230730B2 (ja)
WO (1) WO2008153770A2 (ja)

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EP2316221A1 (en) * 2008-08-28 2011-05-04 MESA Imaging AG Demodulation pixel with daisy chain charge storage sites and method of operation therefor
US9793673B2 (en) 2011-06-13 2017-10-17 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US8873596B2 (en) 2011-07-22 2014-10-28 Kla-Tencor Corporation Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal
US9250178B2 (en) 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals
US10197501B2 (en) 2011-12-12 2019-02-05 Kla-Tencor Corporation Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
US9601299B2 (en) 2012-08-03 2017-03-21 Kla-Tencor Corporation Photocathode including silicon substrate with boron layer
US9151940B2 (en) 2012-12-05 2015-10-06 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US8929406B2 (en) 2013-01-24 2015-01-06 Kla-Tencor Corporation 193NM laser and inspection system
US9529182B2 (en) 2013-02-13 2016-12-27 KLA—Tencor Corporation 193nm laser and inspection system
US9608399B2 (en) 2013-03-18 2017-03-28 Kla-Tencor Corporation 193 nm laser and an inspection system using a 193 nm laser
US9478402B2 (en) 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
US9347890B2 (en) 2013-12-19 2016-05-24 Kla-Tencor Corporation Low-noise sensor and an inspection system using a low-noise sensor
US9748294B2 (en) 2014-01-10 2017-08-29 Hamamatsu Photonics K.K. Anti-reflection layer for back-illuminated sensor
US9410901B2 (en) 2014-03-17 2016-08-09 Kla-Tencor Corporation Image sensor, an inspection system and a method of inspecting an article
US9804101B2 (en) 2014-03-20 2017-10-31 Kla-Tencor Corporation System and method for reducing the bandwidth of a laser and an inspection system and method using a laser
US9767986B2 (en) 2014-08-29 2017-09-19 Kla-Tencor Corporation Scanning electron microscope and methods of inspecting and reviewing samples
US9419407B2 (en) 2014-09-25 2016-08-16 Kla-Tencor Corporation Laser assembly and inspection system using monolithic bandwidth narrowing apparatus
US9748729B2 (en) 2014-10-03 2017-08-29 Kla-Tencor Corporation 183NM laser and inspection system
US9860466B2 (en) * 2015-05-14 2018-01-02 Kla-Tencor Corporation Sensor with electrically controllable aperture for inspection and metrology systems
US10748730B2 (en) 2015-05-21 2020-08-18 Kla-Tencor Corporation Photocathode including field emitter array on a silicon substrate with boron layer
US10462391B2 (en) 2015-08-14 2019-10-29 Kla-Tencor Corporation Dark-field inspection using a low-noise sensor
US10313622B2 (en) 2016-04-06 2019-06-04 Kla-Tencor Corporation Dual-column-parallel CCD sensor and inspection systems using a sensor
US10778925B2 (en) 2016-04-06 2020-09-15 Kla-Tencor Corporation Multiple column per channel CCD sensor architecture for inspection and metrology
US10175555B2 (en) 2017-01-03 2019-01-08 KLA—Tencor Corporation 183 nm CW laser and inspection system
US11114489B2 (en) 2018-06-18 2021-09-07 Kla-Tencor Corporation Back-illuminated sensor and a method of manufacturing a sensor
US10943760B2 (en) 2018-10-12 2021-03-09 Kla Corporation Electron gun and electron microscope
US11114491B2 (en) 2018-12-12 2021-09-07 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor
US11848350B2 (en) 2020-04-08 2023-12-19 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer

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JP4009409B2 (ja) * 1999-10-29 2007-11-14 株式会社日立製作所 パターン欠陥検査方法及びその装置
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US6836560B2 (en) * 2000-11-13 2004-12-28 Kla - Tencor Technologies Corporation Advanced phase shift inspection method
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