JP2010524059A5 - - Google Patents
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- Publication number
- JP2010524059A5 JP2010524059A5 JP2010501086A JP2010501086A JP2010524059A5 JP 2010524059 A5 JP2010524059 A5 JP 2010524059A5 JP 2010501086 A JP2010501086 A JP 2010501086A JP 2010501086 A JP2010501086 A JP 2010501086A JP 2010524059 A5 JP2010524059 A5 JP 2010524059A5
- Authority
- JP
- Japan
- Prior art keywords
- memory
- memory module
- module
- data
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000013507 mapping Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 6
- 230000007547 defect Effects 0.000 claims 4
- 230000015556 catabolic process Effects 0.000 claims 3
- 238000006731 degradation reaction Methods 0.000 claims 3
- 238000004891 communication Methods 0.000 claims 2
- 230000002950 deficient Effects 0.000 claims 2
- 230000004044 response Effects 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US90935907P | 2007-03-30 | 2007-03-30 | |
| US60/909,359 | 2007-03-30 | ||
| PCT/US2008/057471 WO2008121559A1 (en) | 2007-03-30 | 2008-03-19 | System including hierarchical memory modules having different types of integrated circuit memory devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010524059A JP2010524059A (ja) | 2010-07-15 |
| JP2010524059A5 true JP2010524059A5 (enExample) | 2011-05-06 |
| JP5401444B2 JP5401444B2 (ja) | 2014-01-29 |
Family
ID=39512709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010501086A Active JP5401444B2 (ja) | 2007-03-30 | 2008-03-19 | 異なる種類の集積回路メモリ素子を有する階層メモリモジュールを含むシステム |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US9195602B2 (enExample) |
| EP (2) | EP2132635B1 (enExample) |
| JP (1) | JP5401444B2 (enExample) |
| CN (1) | CN101689145A (enExample) |
| WO (1) | WO2008121559A1 (enExample) |
Families Citing this family (50)
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| WO2008131058A2 (en) | 2007-04-17 | 2008-10-30 | Rambus Inc. | Hybrid volatile and non-volatile memory device |
| US8055809B2 (en) * | 2008-12-24 | 2011-11-08 | International Business Machines Corporation | System and method for distributing signal with efficiency over microprocessor |
| US9123409B2 (en) * | 2009-06-11 | 2015-09-01 | Micron Technology, Inc. | Memory device for a hierarchical memory architecture |
| US8245024B2 (en) | 2009-08-21 | 2012-08-14 | Micron Technology, Inc. | Booting in systems having devices coupled in a chained configuration |
| US9483399B2 (en) * | 2009-12-31 | 2016-11-01 | Micron Technology, Inc. | Sub-OS virtual memory management layer |
| US8799553B2 (en) | 2010-04-13 | 2014-08-05 | Apple Inc. | Memory controller mapping on-the-fly |
| US8463959B2 (en) * | 2010-05-31 | 2013-06-11 | Mosaid Technologies Incorporated | High-speed interface for daisy-chained devices |
| JP5498933B2 (ja) * | 2010-12-27 | 2014-05-21 | 株式会社リガク | X線検出器 |
| GB2493340A (en) * | 2011-07-28 | 2013-02-06 | St Microelectronics Res & Dev | Address mapping of boot transactions between dies in a system in package |
| CN104303167B (zh) * | 2012-05-08 | 2018-01-23 | 马维尔国际贸易有限公司 | 计算机系统和存储器管理的方法 |
| WO2014155593A1 (ja) | 2013-03-27 | 2014-10-02 | 株式会社日立製作所 | Sdramインターフェイスを有するdram、フラッシュメモリ混載メモリモジュール |
| US9658783B2 (en) | 2013-03-27 | 2017-05-23 | Hitachi, Ltd. | DRAM having SDRAM interface and flash memory consolidated memory module |
| CN104216837A (zh) * | 2013-05-31 | 2014-12-17 | 华为技术有限公司 | 一种内存系统、内存访问请求的处理方法和计算机系统 |
| US9858181B2 (en) | 2013-06-20 | 2018-01-02 | Hitachi, Ltd. | Memory module having different types of memory mounted together thereon, and information processing device having memory module mounted therein |
| US20150106547A1 (en) * | 2013-10-14 | 2015-04-16 | Micron Technology, Inc. | Distributed memory systems and methods |
| CN105408875B (zh) * | 2014-02-23 | 2019-06-21 | 拉姆伯斯公司 | 在存储器接口上的分布式过程执行和文件系统 |
| US20150363309A1 (en) * | 2014-06-17 | 2015-12-17 | Kingtiger Technology (Canada) Inc. | System and method of increasing reliability of non-volatile memory storage |
| CN105760562B (zh) * | 2014-12-19 | 2019-05-10 | 吴国盛 | 基于分层读取的集成电路设计架构 |
| US10169257B2 (en) | 2015-03-06 | 2019-01-01 | Rambus Inc. | Module based data transfer |
| US11551735B2 (en) * | 2015-03-11 | 2023-01-10 | Rambus, Inc. | High performance, non-volatile memory module |
| JP6384375B2 (ja) | 2015-03-23 | 2018-09-05 | 富士通株式会社 | 情報処理装置、記憶装置制御方法、記憶装置制御プログラム及び情報処理システム |
| KR102430561B1 (ko) * | 2015-09-11 | 2022-08-09 | 삼성전자주식회사 | 듀얼 포트 디램을 포함하는 메모리 모듈 |
| US10678719B2 (en) | 2015-10-01 | 2020-06-09 | Rambus Inc. | Memory system with cached memory module operations |
| US11054992B2 (en) * | 2015-12-28 | 2021-07-06 | SK Hynix Inc. | Memory module and memory system including the memory module |
| US9830086B2 (en) * | 2016-03-03 | 2017-11-28 | Samsung Electronics Co., Ltd. | Hybrid memory controller for arbitrating access to volatile and non-volatile memories in a hybrid memory group |
| EP4145447A1 (en) * | 2016-06-27 | 2023-03-08 | Apple Inc. | Memory system having combined high density, low bandwidth and low density, high bandwidth memories |
| EP3532933B1 (en) * | 2016-10-31 | 2022-03-02 | Rambus Inc. | Hybrid memory module |
| KR102681170B1 (ko) * | 2017-01-17 | 2024-07-04 | 에스케이하이닉스 주식회사 | 메모리 장치, 이를 포함하는 메모리 시스템, 및 그의 리페어 동작 방법 |
| US10402521B1 (en) * | 2017-01-19 | 2019-09-03 | Xilinx, Inc. | Programmable integrated circuits for emulation |
| US10147712B1 (en) * | 2017-07-21 | 2018-12-04 | Micron Technology, Inc. | Memory device with a multiplexed command/address bus |
| US10959872B2 (en) | 2017-08-02 | 2021-03-30 | Samsung Electronics Co., Ltd. | Motion assistance apparatus |
| US10446198B2 (en) | 2017-10-02 | 2019-10-15 | Micron Technology, Inc. | Multiple concurrent modulation schemes in a memory system |
| US11403241B2 (en) | 2017-10-02 | 2022-08-02 | Micron Technology, Inc. | Communicating data with stacked memory dies |
| US10355893B2 (en) | 2017-10-02 | 2019-07-16 | Micron Technology, Inc. | Multiplexing distinct signals on a single pin of a memory device |
| US10725913B2 (en) | 2017-10-02 | 2020-07-28 | Micron Technology, Inc. | Variable modulation scheme for memory device access or operation |
| US10490245B2 (en) | 2017-10-02 | 2019-11-26 | Micron Technology, Inc. | Memory system that supports dual-mode modulation |
| CN111433749B (zh) | 2017-10-12 | 2023-12-08 | 拉姆伯斯公司 | 具有dram高速缓存的非易失性物理存储器 |
| KR102414047B1 (ko) * | 2017-10-30 | 2022-06-29 | 에스케이하이닉스 주식회사 | 통합 메모리 디바이스 및 그의 동작 방법 |
| US11544168B2 (en) | 2017-10-30 | 2023-01-03 | SK Hynix Inc. | Memory system |
| CN107797945A (zh) * | 2017-10-31 | 2018-03-13 | 郑州云海信息技术有限公司 | 一种存储系统及其数据存储方法、装置、系统及设备 |
| US11099779B2 (en) | 2018-09-24 | 2021-08-24 | Micron Technology, Inc. | Addressing in memory with a read identification (RID) number |
| US11403035B2 (en) * | 2018-12-19 | 2022-08-02 | Micron Technology, Inc. | Memory module including a controller and interfaces for communicating with a host and another memory module |
| US11163490B2 (en) | 2019-09-17 | 2021-11-02 | Micron Technology, Inc. | Programmable engine for data movement |
| US20210081318A1 (en) * | 2019-09-17 | 2021-03-18 | Micron Technology, Inc. | Flexible provisioning of multi-tier memory |
| US11397694B2 (en) | 2019-09-17 | 2022-07-26 | Micron Technology, Inc. | Memory chip connecting a system on a chip and an accelerator chip |
| US11416422B2 (en) | 2019-09-17 | 2022-08-16 | Micron Technology, Inc. | Memory chip having an integrated data mover |
| US11604744B2 (en) | 2020-10-16 | 2023-03-14 | Alibaba Group Holding Limited | Dual-modal memory interface controller |
| US20240152279A1 (en) * | 2022-11-08 | 2024-05-09 | Micron Technology, Inc. | Memory sub-system for memory cell in-field touch-up |
| US20240419331A1 (en) * | 2023-06-15 | 2024-12-19 | Western Digital Technologies, Inc. | SSD Content Preloading Via Broadcasting System |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04324194A (ja) * | 1991-04-25 | 1992-11-13 | Nec Corp | Rom回路 |
| US5359569A (en) | 1991-10-29 | 1994-10-25 | Hitachi Ltd. | Semiconductor memory |
| US6170047B1 (en) * | 1994-11-16 | 2001-01-02 | Interactive Silicon, Inc. | System and method for managing system memory and/or non-volatile memory using a memory controller with integrated compression and decompression capabilities |
| EP1036362B1 (en) | 1997-12-05 | 2006-11-15 | Intel Corporation | Memory system including a memory module having a memory module controller |
| EP1297434B1 (en) | 2000-06-27 | 2005-04-20 | Koninklijke Philips Electronics N.V. | Integrated circuit with flash |
| US6625687B1 (en) * | 2000-09-18 | 2003-09-23 | Intel Corporation | Memory module employing a junction circuit for point-to-point connection isolation, voltage translation, data synchronization, and multiplexing/demultiplexing |
| US6553450B1 (en) | 2000-09-18 | 2003-04-22 | Intel Corporation | Buffer to multiply memory interface |
| US6877079B2 (en) | 2001-03-06 | 2005-04-05 | Samsung Electronics Co., Ltd. | Memory system having point-to-point bus configuration |
| JP4049297B2 (ja) * | 2001-06-11 | 2008-02-20 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| US7779212B2 (en) | 2003-10-17 | 2010-08-17 | Micron Technology, Inc. | Method and apparatus for sending data from multiple sources over a communications bus |
| US7277988B2 (en) | 2004-10-29 | 2007-10-02 | International Business Machines Corporation | System, method and storage medium for providing data caching and data compression in a memory subsystem |
| KR100588599B1 (ko) * | 2005-05-03 | 2006-06-14 | 삼성전자주식회사 | 메모리 모듈 및 메모리 시스템 |
| US7966446B2 (en) * | 2005-09-12 | 2011-06-21 | Samsung Electronics Co., Ltd. | Memory system and method having point-to-point link |
| JP4863749B2 (ja) * | 2006-03-29 | 2012-01-25 | 株式会社日立製作所 | フラッシュメモリを用いた記憶装置、その消去回数平準化方法、及び消去回数平準化プログラム |
| US7966469B2 (en) * | 2006-08-14 | 2011-06-21 | Qimonda Ag | Memory system and method for operating a memory system |
| US7554855B2 (en) * | 2006-12-20 | 2009-06-30 | Mosaid Technologies Incorporated | Hybrid solid-state memory system having volatile and non-volatile memory |
| US7564722B2 (en) * | 2007-01-22 | 2009-07-21 | Micron Technology, Inc. | Memory system and method having volatile and non-volatile memory devices at same hierarchical level |
| US8185685B2 (en) * | 2007-12-14 | 2012-05-22 | Hitachi Global Storage Technologies Netherlands B.V. | NAND flash module replacement for DRAM module |
| US9547589B2 (en) * | 2008-06-18 | 2017-01-17 | Super Talent Technology, Corp. | Endurance translation layer (ETL) and diversion of temp files for reduced flash wear of a super-endurance solid-state drive |
| KR102534648B1 (ko) * | 2018-03-08 | 2023-05-22 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그것의 동작 방법 |
| US11442635B2 (en) * | 2019-01-10 | 2022-09-13 | Western Digital Technologies, Inc. | Data storage systems and methods for optimized scheduling of background management operations |
-
2008
- 2008-03-19 WO PCT/US2008/057471 patent/WO2008121559A1/en not_active Ceased
- 2008-03-19 JP JP2010501086A patent/JP5401444B2/ja active Active
- 2008-03-19 EP EP08732464.6A patent/EP2132635B1/en active Active
- 2008-03-19 EP EP17186301.2A patent/EP3279798B1/en active Active
- 2008-03-19 CN CN200880010770A patent/CN101689145A/zh active Pending
- 2008-03-19 US US12/529,323 patent/US9195602B2/en active Active
-
2015
- 2015-10-15 US US14/883,916 patent/US9460021B2/en not_active Expired - Fee Related
-
2016
- 2016-09-30 US US15/282,932 patent/US9767918B2/en active Active
-
2017
- 2017-08-30 US US15/691,646 patent/US10755794B2/en active Active
-
2020
- 2020-08-21 US US17/000,130 patent/US11823757B2/en active Active
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