JP2010508167A5 - - Google Patents
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- Publication number
- JP2010508167A5 JP2010508167A5 JP2009535072A JP2009535072A JP2010508167A5 JP 2010508167 A5 JP2010508167 A5 JP 2010508167A5 JP 2009535072 A JP2009535072 A JP 2009535072A JP 2009535072 A JP2009535072 A JP 2009535072A JP 2010508167 A5 JP2010508167 A5 JP 2010508167A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- protective layer
- substrate
- micromachine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims description 302
- 239000011241 protective layer Substances 0.000 claims description 127
- 238000000034 method Methods 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 90
- 230000007547 defect Effects 0.000 claims description 86
- 238000004519 manufacturing process Methods 0.000 claims description 56
- 238000000151 deposition Methods 0.000 claims description 50
- 238000005530 etching Methods 0.000 claims description 46
- 239000007772 electrode material Substances 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 36
- 238000000137 annealing Methods 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 230000008021 deposition Effects 0.000 claims description 23
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 44
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 39
- 239000000463 material Substances 0.000 description 31
- 239000007789 gas Substances 0.000 description 19
- 238000012805 post-processing Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 16
- 238000012545 processing Methods 0.000 description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 239000013043 chemical agent Substances 0.000 description 12
- 239000012808 vapor phase Substances 0.000 description 12
- 238000010924 continuous production Methods 0.000 description 11
- 230000008901 benefit Effects 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000007872 degassing Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86367906P | 2006-10-31 | 2006-10-31 | |
| EP2007061558 | 2007-10-26 | ||
| PCT/EP2007/061731 WO2008053008A2 (en) | 2006-10-31 | 2007-10-31 | Method for manufacturing a micromachined device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010508167A JP2010508167A (ja) | 2010-03-18 |
| JP2010508167A5 true JP2010508167A5 (enExample) | 2011-09-15 |
Family
ID=39273064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009535072A Pending JP2010508167A (ja) | 2006-10-31 | 2007-10-31 | マイクロマシンデバイスの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20100062224A1 (enExample) |
| JP (1) | JP2010508167A (enExample) |
| WO (1) | WO2008053008A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7557433B2 (en) | 2004-10-25 | 2009-07-07 | Mccain Joseph H | Microelectronic device with integrated energy source |
| EP1801067A3 (en) * | 2005-12-21 | 2012-05-09 | Imec | Method for forming silicon germanium layers at low temperatures for controlling stress gradient |
| EP2183743A1 (en) | 2007-08-29 | 2010-05-12 | Imec | Method for formation of tips |
| US8487386B2 (en) * | 2009-06-18 | 2013-07-16 | Imec | Method for forming MEMS devices having low contact resistance and devices obtained thereof |
| US20130001550A1 (en) * | 2011-06-29 | 2013-01-03 | Invensense, Inc. | Hermetically sealed mems device with a portion exposed to the environment with vertically integrated electronics |
| US8647977B2 (en) * | 2011-08-17 | 2014-02-11 | Micron Technology, Inc. | Methods of forming interconnects |
| KR101735976B1 (ko) * | 2011-09-30 | 2017-05-15 | 인텔 코포레이션 | 트랜지스터 게이트용 캡핑 유전체 구조를 형성하는 방법 |
| US9580776B2 (en) | 2011-09-30 | 2017-02-28 | Intel Corporation | Tungsten gates for non-planar transistors |
| DE112011105702T5 (de) | 2011-10-01 | 2014-07-17 | Intel Corporation | Source-/Drain-Kontakte für nicht planare Transistoren |
| CN104053626B (zh) | 2011-10-28 | 2017-06-30 | 意法半导体股份有限公司 | 用于制造针对氢氟酸蚀刻的保护层的方法、设置有该保护层的半导体器件及制造该半导体器件的方法 |
| ITTO20120834A1 (it) * | 2012-09-26 | 2014-03-27 | St Microelectronics Srl | Sensore inerziale con strato di protezione da attacco e relativo metodo di fabbricazione |
| WO2015077324A1 (en) * | 2013-11-19 | 2015-05-28 | Simpore Inc. | Free-standing silicon oxide membranes and methods of making and using same |
| US10553492B2 (en) * | 2018-04-30 | 2020-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective NFET/PFET recess of source/drain regions |
| US11699623B2 (en) | 2020-10-14 | 2023-07-11 | Applied Materials, Inc. | Systems and methods for analyzing defects in CVD films |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851370A (en) * | 1987-12-28 | 1989-07-25 | American Telephone And Telegraph Company, At&T Bell Laboratories | Fabricating a semiconductor device with low defect density oxide |
| US5007982A (en) * | 1988-07-11 | 1991-04-16 | North American Philips Corporation | Reactive ion etching of silicon with hydrogen bromide |
| US7176111B2 (en) * | 1997-03-28 | 2007-02-13 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof |
| US6210988B1 (en) * | 1999-01-15 | 2001-04-03 | The Regents Of The University Of California | Polycrystalline silicon germanium films for forming micro-electromechanical systems |
| US6346459B1 (en) * | 1999-02-05 | 2002-02-12 | Silicon Wafer Technologies, Inc. | Process for lift off and transfer of semiconductor devices onto an alien substrate |
| JP2002543610A (ja) * | 1999-05-03 | 2002-12-17 | アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ | ＳｉＣの除去法 |
| US6822304B1 (en) * | 1999-11-12 | 2004-11-23 | The Board Of Trustees Of The Leland Stanford Junior University | Sputtered silicon for microstructures and microcavities |
| US20040157426A1 (en) * | 2003-02-07 | 2004-08-12 | Luc Ouellet | Fabrication of advanced silicon-based MEMS devices |
| EP1482069A1 (en) * | 2003-05-28 | 2004-12-01 | Interuniversitair Microelektronica Centrum Vzw | Method for producing polycrystalline silicon germanium suitable for micromachining |
| US6917459B2 (en) * | 2003-06-03 | 2005-07-12 | Hewlett-Packard Development Company, L.P. | MEMS device and method of forming MEMS device |
| JP4191000B2 (ja) * | 2003-10-06 | 2008-12-03 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
| TWI366218B (en) * | 2004-06-01 | 2012-06-11 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
| US7557027B2 (en) * | 2005-01-24 | 2009-07-07 | Interuniversitair Microelektronica Centrum | Method of producing microcystalline silicon germanium suitable for micromachining |
| KR100689826B1 (ko) * | 2005-03-29 | 2007-03-08 | 삼성전자주식회사 | 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들 |
| EP1801067A3 (en) * | 2005-12-21 | 2012-05-09 | Imec | Method for forming silicon germanium layers at low temperatures for controlling stress gradient |
-
2007
- 2007-10-31 US US12/447,574 patent/US20100062224A1/en not_active Abandoned
- 2007-10-31 WO PCT/EP2007/061731 patent/WO2008053008A2/en not_active Ceased
- 2007-10-31 JP JP2009535072A patent/JP2010508167A/ja active Pending
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