JP2010503234A - 安価なテラヘルツ・パルス波発生器 - Google Patents
安価なテラヘルツ・パルス波発生器 Download PDFInfo
- Publication number
- JP2010503234A JP2010503234A JP2009527467A JP2009527467A JP2010503234A JP 2010503234 A JP2010503234 A JP 2010503234A JP 2009527467 A JP2009527467 A JP 2009527467A JP 2009527467 A JP2009527467 A JP 2009527467A JP 2010503234 A JP2010503234 A JP 2010503234A
- Authority
- JP
- Japan
- Prior art keywords
- pulse
- light
- mode
- switch
- terahertz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims description 22
- 230000003111 delayed effect Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims 15
- 230000003287 optical effect Effects 0.000 abstract description 58
- 230000001360 synchronised effect Effects 0.000 abstract description 5
- 230000006870 function Effects 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 7
- 239000000835 fiber Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
Claims (17)
- テラヘルツ領域の信号のパルスを生成する方法であって、
第1のモード同期半導体レーザ・ダイオードから光のパルスを供給するステップと、
バイアスされたAustonスイッチの中でテラヘルツ領域の電磁パルスを生成するステップであって、前記電磁パルスのそれぞれが、前記光のパルスのうちの対応する1パルスに応答して生成されるステップとを含む、方法。 - 前記光のパルスを処理するステップをさらに含み、前記処理が、増幅するステップおよび圧縮するステップから成る群の機能のうちの少なくとも1機能である、請求項1に記載の方法。
- バイアスされないAustonスイッチにおいて、テラヘルツ領域での前記電磁パルスのうちの少なくとも一部を受信するステップと、
前記バイアスされないAustonスイッチにおいて、第2のモード同期半導体レーザ・ダイオードにより供給される光のパルスを受信するステップとをさらに含む、請求項1に記載の方法。 - 前記第2のモード同期半導体レーザ・ダイオードにより供給される前記光のパルスを処理するステップをさらに含み、前記処理が、増幅するステップおよび圧縮するステップから成る群の機能のうちの少なくとも1機能である、請求項3に記載の方法。
- 前記バイアスされないAustonスイッチにより受信された前記テラヘルツ領域でのパルスのエネルギーの前記少なくとも一部が、検査されている材料に接触している、請求項3に記載の方法。
- 前記第1および第2のレーザ・ダイオードによる出力として生成された前記光のパルスが、位相において互いにオフセットされる、請求項3に記載の方法。
- 前記オフセットを変化させるステップをさらに含む、請求項6に記載の方法。
- 前記光のパルスの2つのレプリカを生成するステップと、
前記レプリカのうちの一方を、前記レプリカのうちの他方に関して遅延させるステップと、
前記レプリカのうちの前記遅延されたレプリカと前記レプリカのうちの前記遅延されないレプリカのうちの一方を、バイアスされないAustonスイッチにおいて受信するステップと、
前記レプリカのうちの前記遅延されたレプリカと前記レプリカのうちの前記遅延されないレプリカのうちの他方を、前記バイアスされたAustonスイッチにおいて受信するステップとをさらに含む、請求項1に記載の方法。 - 前記バイアスされないAustonスイッチにおいて、テラヘルツ領域での前記電磁パルスの少なくとも一部を受信するステップをさらに含む、請求項8に記載の方法。
- 前記バイアスされないAustonスイッチにより受信されるテラヘルツ領域での前記電磁パルスのそれぞれのエネルギーの前記少なくとも一部が、検査されている材料に接触している、請求項9に記載の方法。
- 前記光パルスの周波数を変化させるステップをさらに含む、請求項8に記載の方法。
- 前記レプリカを生成する前に、前記光パルスを圧縮するステップをさらに含む、請求項8に記載の方法。
- 前記レプリカを生成する前に、前記光パルスを増幅するステップをさらに含む、請求項8に記載の方法。
- 前記遅延させるステップにおいて、前記レプリカのうちの前記第1のレプリカが、前記レプリカのうちの前記第2のレプリカに対してある一定量だけ遅延させられる、請求項8に記載の方法。
- テラヘルツ領域の信号のパルスを生成するための装置であって、
第1の光のパルスを供給する第1のモード同期半導体レーザ・ダイオードと、
テラヘルツ領域の電磁パルスを生成するための手段であって、前記電磁パルスのそれぞれが、前記光のパルスのうちの対応する1パルスに応答して生成される手段とを備える、装置。 - テラヘルツ領域の前記電磁パルスが供試材料に接触した後のテラヘルツ領域の前記電磁パルスの少なくとも一部と、前記第1の光のパルスに対して制御可能な状態で遅延することができる第2の光のパルスとの受信に応答して電気信号を生成する手段をさらに備える、請求項15に記載の装置。
- 前記第1の光のパルスに対する前記第2の光のパルスの前記遅延を制御する手段をさらに備える、請求項16に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/525,787 US7929580B2 (en) | 2006-09-22 | 2006-09-22 | Inexpensive terahertz pulse wave generator |
US11/525,787 | 2006-09-22 | ||
PCT/US2007/020298 WO2008039342A1 (en) | 2006-09-22 | 2007-09-19 | Inexpensive terahertz pulse wave generator |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010503234A true JP2010503234A (ja) | 2010-01-28 |
JP5197605B2 JP5197605B2 (ja) | 2013-05-15 |
Family
ID=38983337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009527467A Active JP5197605B2 (ja) | 2006-09-22 | 2007-09-19 | 安価なテラヘルツ・パルス波発生器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7929580B2 (ja) |
EP (1) | EP2069759B1 (ja) |
JP (1) | JP5197605B2 (ja) |
KR (1) | KR101050631B1 (ja) |
CN (1) | CN101517396B (ja) |
WO (1) | WO2008039342A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8642964B2 (en) * | 2010-08-31 | 2014-02-04 | The United States of America, as represented by the Secretary of Commerce, NIST | High repetition rate photoconductive terahertz emitter using a radio frequency bias |
JP5799538B2 (ja) * | 2011-03-18 | 2015-10-28 | セイコーエプソン株式会社 | テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置 |
KR102132511B1 (ko) | 2013-12-04 | 2020-07-09 | 마이크로테크 인스트러먼츠, 인크. | 테라헤르츠 이미지의 고-대비, 근-실시간 습득을 위한 시스템 및 방법 |
US11262639B2 (en) | 2020-04-03 | 2022-03-01 | Microtech Instruments, Inc. | Apparatus and methods for upconversion of a millimeter-wave signal and detection of the upconverted signal |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001021503A (ja) * | 1999-07-09 | 2001-01-26 | Japan Science & Technology Corp | テラヘルツ帯複素誘電率測定装置 |
JP2005017644A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 高周波電気信号制御装置及びセンシングシステム |
JP2005020304A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 高周波電気信号制御装置およびセンシングシステム |
WO2005008211A2 (en) * | 2003-05-16 | 2005-01-27 | Sarnoff Corporation | Method and apparatus for generating terahertz radiation |
JP2007248100A (ja) * | 2006-03-14 | 2007-09-27 | Hitachi Ltd | テラへルツ装置 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4127784A (en) * | 1977-01-06 | 1978-11-28 | Gte Laboratories Incorporated | Light activated solid state microwave generators |
US4156148A (en) * | 1977-08-18 | 1979-05-22 | Gentron Corporation | Photocoupling structure for a solid state power control device |
US4347437A (en) * | 1980-06-17 | 1982-08-31 | The University Of Rochester | Light activated switching by the avalanche effect in semiconductors |
US4376285A (en) * | 1980-06-23 | 1983-03-08 | Massachusetts Institute Of Technology | High speed optoelectronic switch |
US4413178A (en) * | 1981-03-23 | 1983-11-01 | University Of Rochester | Sweep drive circuit for a streak camera |
US4482863A (en) * | 1981-08-14 | 1984-11-13 | At&T Bell Laboratories | Apparatus and method for measuring electronic response of high speed devices and materials |
GB8413502D0 (en) * | 1984-05-25 | 1984-07-04 | British Telecomm | Mode locked laser light sources |
US4681449A (en) * | 1984-09-07 | 1987-07-21 | Stanford University | High speed testing of electronic circuits by electro-optic sampling |
JPS6189690A (ja) * | 1984-10-09 | 1986-05-07 | Fujitsu Ltd | 半導体レ−ザ |
US4695733A (en) * | 1984-10-17 | 1987-09-22 | Philip Pesavento | Photoconductive power switch |
US4864119A (en) * | 1987-09-03 | 1989-09-05 | Power Spectra, Inc. | Bulk avalanche semiconductor switch using a mesa structure |
US4782222A (en) * | 1987-09-03 | 1988-11-01 | Power Spectra | Bulk avalanche semiconductor switch using partial light penetration and inducing field compression |
US5056111A (en) * | 1988-08-09 | 1991-10-08 | Ibm Corporation | Integrated terahertz electromagnetic wave system |
US5142224A (en) * | 1988-12-13 | 1992-08-25 | Comsat | Non-destructive semiconductor wafer probing system using laser pulses to generate and detect millimeter wave signals |
US4960989A (en) * | 1989-03-28 | 1990-10-02 | Photon Kinetics Inc. | Optical time domain reflectometer having a receiver with selectively controlled gain |
US4978910A (en) * | 1989-06-26 | 1990-12-18 | At&T Bell Laboratories | Electrooptic apparatus for the measurement of ultrashort electrical signals |
US5384798A (en) * | 1992-12-03 | 1995-01-24 | Energy Compression Research Corp. | Photocondutively controlled electro-optic laser modulation |
US5486833A (en) * | 1993-04-02 | 1996-01-23 | Barrett; Terence W. | Active signalling systems |
US5598425A (en) * | 1993-11-15 | 1997-01-28 | University Of New Mexico | High stability ultra-short sources of electromagnetic radiation |
US5778016A (en) * | 1994-04-01 | 1998-07-07 | Imra America, Inc. | Scanning temporal ultrafast delay methods and apparatuses therefor |
US5844288A (en) * | 1994-07-06 | 1998-12-01 | The Regents Of The University Of Michigan | Photoconductive element and method for measuring high frequency signals |
US5623145A (en) * | 1995-02-15 | 1997-04-22 | Lucent Technologies Inc. | Method and apparatus for terahertz imaging |
US5541947A (en) * | 1995-05-10 | 1996-07-30 | The Regents Of The University Of Michigan | Selectively triggered, high contrast laser |
US6058128A (en) * | 1996-03-25 | 2000-05-02 | Sdl, Inc. | Apparatus for providing a stabilized laser source |
FR2766576B1 (fr) * | 1997-07-23 | 1999-08-27 | Commissariat Energie Atomique | Dispositif d'analyse d'impulsion unique a pas variable |
JP2002214050A (ja) * | 2000-12-01 | 2002-07-31 | Agilent Technol Inc | 光サンプリング装置 |
KR100474839B1 (ko) * | 2001-03-28 | 2005-03-08 | 삼성전자주식회사 | 광 발진 장치 |
US6963442B2 (en) * | 2002-04-17 | 2005-11-08 | Hrl Laboratories, Llc | Low-noise, switchable RF-lightwave synthesizer |
US7095772B1 (en) * | 2003-05-22 | 2006-08-22 | Research Foundation Of The University Of Central Florida, Inc. | Extreme chirped/stretched pulsed amplification and laser |
US7630588B2 (en) * | 2003-06-25 | 2009-12-08 | Canon Kabushiki Kaisha | High frequency electrical signal control device and sensing system |
US6903891B1 (en) * | 2003-11-24 | 2005-06-07 | Seagate Technology Llc | Photoconductive optical write driver for magnetic recording |
US7212553B2 (en) * | 2004-03-16 | 2007-05-01 | Coherent, Inc. | Wavelength stabilized diode-laser array |
US7751862B2 (en) * | 2004-08-19 | 2010-07-06 | Fp Technology | Frequency resolved imaging system |
US7289203B2 (en) * | 2004-09-30 | 2007-10-30 | Chromaplex, Inc. | Method and system for spectral analysis of biological materials using stimulated cars |
JP4565198B2 (ja) * | 2005-03-01 | 2010-10-20 | 国立大学法人大阪大学 | 高分解・高速テラヘルツ分光計測装置 |
JP4402026B2 (ja) * | 2005-08-30 | 2010-01-20 | キヤノン株式会社 | センシング装置 |
US7535005B2 (en) * | 2007-01-31 | 2009-05-19 | Emcore Corporation | Pulsed terahertz spectrometer |
-
2006
- 2006-09-22 US US11/525,787 patent/US7929580B2/en active Active
-
2007
- 2007-09-19 WO PCT/US2007/020298 patent/WO2008039342A1/en active Application Filing
- 2007-09-19 EP EP07838502.8A patent/EP2069759B1/en not_active Not-in-force
- 2007-09-19 KR KR1020097005803A patent/KR101050631B1/ko active IP Right Grant
- 2007-09-19 JP JP2009527467A patent/JP5197605B2/ja active Active
- 2007-09-19 CN CN2007800346031A patent/CN101517396B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001021503A (ja) * | 1999-07-09 | 2001-01-26 | Japan Science & Technology Corp | テラヘルツ帯複素誘電率測定装置 |
WO2005008211A2 (en) * | 2003-05-16 | 2005-01-27 | Sarnoff Corporation | Method and apparatus for generating terahertz radiation |
JP2005017644A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 高周波電気信号制御装置及びセンシングシステム |
JP2005020304A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 高周波電気信号制御装置およびセンシングシステム |
JP2007248100A (ja) * | 2006-03-14 | 2007-09-27 | Hitachi Ltd | テラへルツ装置 |
Non-Patent Citations (5)
Title |
---|
JPN5009014176; YASUI TAKESHI: APPLIED PHYSICS LETTERS V87 N6, 20050801, P061101-1 - 061101-3, AIP * |
JPN5009014178; WHITAKER J F: PROCEEDINGS OF THE SPIE V2145, 1994, P168-177, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING * |
JPN5009014179; JANKE C: OPTICS LETTERS V30 N11, 20050601, P1405-1407, OPTICAL SOCIETY OF AMERICA * |
JPN5009014180; VICKERS A J: 1998 IEEE SIXTH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS PROCEEDINGS , 19980903, P191-193, IEEE * |
JPN5009014182; GONG-RU LIN: JAPANESE JOURNAL OF APPLIED PHYSICS,PART1 V41 N10, 200210, P6003-6006, JAPAN SOC.APPL.PHYS * |
Also Published As
Publication number | Publication date |
---|---|
CN101517396A (zh) | 2009-08-26 |
KR20090045367A (ko) | 2009-05-07 |
EP2069759A1 (en) | 2009-06-17 |
KR101050631B1 (ko) | 2011-07-19 |
EP2069759B1 (en) | 2016-11-23 |
JP5197605B2 (ja) | 2013-05-15 |
CN101517396B (zh) | 2011-04-13 |
US7929580B2 (en) | 2011-04-19 |
WO2008039342A1 (en) | 2008-04-03 |
US20080075134A1 (en) | 2008-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101699273B1 (ko) | 테라헤르츠파를 이용한 실시간 비접촉 비파괴 두께 측정장치 | |
US7675037B2 (en) | Method and apparatus for measuring terahertz time-domain spectroscopy | |
Bartels et al. | Ultrafast time-domain spectroscopy based on high-speed asynchronous optical sampling | |
CN106442378B (zh) | 基于太赫兹光梳提高光谱吸收率测试精准度的装置 | |
CN104677497B (zh) | 一种太赫兹波性能的检测装置和方法 | |
US10113959B2 (en) | Terahertz wave generating device and spectroscopic device using same | |
WO2006035780A1 (ja) | 赤外光放射装置、赤外光検出装置および時系列変換パルス分光計測装置ならびに赤外光放射方法 | |
Szwaj et al. | High sensitivity photonic time-stretch electro-optic sampling of terahertz pulses | |
JP2012037293A (ja) | テラヘルツ波トランシーバ及び断層像取得装置 | |
JP5197605B2 (ja) | 安価なテラヘルツ・パルス波発生器 | |
WO2018072660A1 (zh) | 太赫兹时域反射系统 | |
JP2006308426A (ja) | テラヘルツ測定装置 | |
WO2009146561A1 (en) | Dual mode terahertz spectroscopy and imaging systems and methods | |
JP5836479B2 (ja) | 時間領域分光装置および時間領域分光分析システム | |
KR102534878B1 (ko) | 테라헤르츠 소자 | |
CN110132432B (zh) | 用于超短脉冲的高动态范围信噪比测量装置 | |
CN109374140B (zh) | 一种具有高时间分辨力的电光取样方法及装置 | |
JP5461079B2 (ja) | 光測定装置 | |
JP2010169541A (ja) | テラヘルツ波を用いる測定装置 | |
US7709798B2 (en) | Terahertz optical gate | |
JP2009080007A (ja) | 時間分解分光システム,時間分解分光方法及びテラヘルツ波発生システム | |
JP2005099453A (ja) | テラヘルツ電磁波発生素子 | |
Bosworth et al. | Electro-Optic Imaging Millimeter-Wave Propagation On-Wafer | |
KR100926032B1 (ko) | 시간분해 THz 펌프-프로브 분광기 | |
Xue et al. | Characteristic research of photoconductive antenna for broadband THz generation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120416 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120713 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120723 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121016 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130205 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160215 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5197605 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |