JP2010287587A - Support tool for semiconductor wafer - Google Patents

Support tool for semiconductor wafer Download PDF

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JP2010287587A
JP2010287587A JP2009137859A JP2009137859A JP2010287587A JP 2010287587 A JP2010287587 A JP 2010287587A JP 2009137859 A JP2009137859 A JP 2009137859A JP 2009137859 A JP2009137859 A JP 2009137859A JP 2010287587 A JP2010287587 A JP 2010287587A
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holding frame
semiconductor wafer
astm
outer holding
inner holding
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JP5268789B2 (en
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Kiyofumi Tanaka
清文 田中
Noriyoshi Hosono
則義 細野
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Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a support tool for a semiconductor wafer that reduces in weight and improve in productivity by sweeping away a risk of deformation of a holding frame when the holding frame is used for a heating process. <P>SOLUTION: The support tool detachably holds a peripheral edge of a heat-resisting elastomer layer 3 holding the semiconductor wafer W, between an inner holding frame 1 and an outer holding frame 2 engaging each other, and is used at least for the heating processing. In the support tool, the inner holding frame 1 and outer holding frame 2 are respectively injection-molded using resin-containing molded materials having a load bending temperature of ≥300°C in ASTM D648 of the ASTM standards and a bending strength of ≥120 MPa in ASTM D790. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、半導体ウェーハを保持して少なくとも各種の加熱工程で使用される半導体ウェーハ用のサポート治具に関するものである。   The present invention relates to a support jig for a semiconductor wafer that holds a semiconductor wafer and is used in at least various heating processes.

従来の半導体ウェーハ用のサポート治具は、図示しないが、所定の成形材料により射出成形されるグリップリングを備え、このグリップリングの周縁部に、中空を覆う耐熱性のエラストマー層が覆着されており、このエラストマー層上に半導体ウェーハが着脱自在に粘着保持される(特許文献1参照)。   Although not shown, a conventional support jig for a semiconductor wafer includes a grip ring that is injection-molded with a predetermined molding material, and a heat-resistant elastomer layer that covers the hollow is covered on the periphery of the grip ring. The semiconductor wafer is detachably adhered and held on the elastomer layer (see Patent Document 1).

グリップリングの所定の成形材料は、ポリカーボネートやABS樹脂にガラス繊維がチョップド法やミルド法により混合分散することにより調製される。また、エラストマー層は、一般的な加熱工程の加熱温度を考慮し、250℃程度の加熱温度に耐え得るよう、シリコーンゴムやフッ素ゴム等のエラストマーを使用して可撓性の薄膜に成形される。   The predetermined molding material of the grip ring is prepared by mixing and dispersing glass fibers in polycarbonate or ABS resin by a chopped method or a milled method. The elastomer layer is formed into a flexible thin film using an elastomer such as silicone rubber or fluororubber so that it can withstand a heating temperature of about 250 ° C. in consideration of the heating temperature of a general heating process. .

係るサポート治具は、エラストマー層に半導体ウェーハを着脱自在に粘着保持した状態で常温における各種工程で使用されたり、ダイアタッチ材を硬化する工程やハンダリフロー工程等からなる加熱工程で用いられたり、あるいはエキスパンド装置にセットされてエラストマー層がエキスパンドされる。   Such a support jig is used in various processes at room temperature with the semiconductor wafer detachably attached to the elastomer layer, or used in a heating process consisting of a process of curing a die attach material, a solder reflow process, etc. Alternatively, the elastomer layer is expanded by being set in an expanding apparatus.

特開2001‐118870号公報JP 2001-118870 A

従来における半導体ウェーハ用のサポート治具は、以上のように構成され、樹脂を含む所定の成形材料によりグリップリングが成形されているので、常温で使用される場合には問題がないものの、ハンダリフロー工程等の加熱工程で使用される場合にはグリップリングが変形し、この結果、グリップリングからエラストマー層が外れたり、半導体ウェーハが脱落するおそれがある。   Conventional support jigs for semiconductor wafers are configured as described above, and the grip ring is molded from a predetermined molding material containing resin, so there is no problem when used at room temperature, but solder reflow When used in a heating process such as a process, the grip ring is deformed. As a result, the elastomer layer may be detached from the grip ring or the semiconductor wafer may fall off.

このような問題を解消する手段としては、アルミニウムやステンレス等の金属を使用してグリップリングを切削加工する方法があげられるが、この方法の場合には、グリップリングの重量が増大するので、ハンダリフロー装置のベルトコンベアにサポート治具をセットすると、グリップリングの重量でベルトコンベアが停止したり、ベルトコンベアの搬送速度が低下して所定のリフロー条件を満たさなくなり、生産性の低下を招くという問題が新たに生じることとなる。   As a means for solving such a problem, there is a method of cutting the grip ring using a metal such as aluminum or stainless steel. In this method, the weight of the grip ring is increased. When the support jig is set on the belt conveyor of the reflow device, the belt conveyor stops due to the weight of the grip ring, or the conveyor speed of the belt conveyor decreases and the predetermined reflow conditions are not satisfied, resulting in a decrease in productivity. Will be newly generated.

本発明は上記に鑑みなされたもので、加熱工程で使用する場合に保持枠の変形するおそれを払拭し、重量を軽減して生産性の向上を図ることのできる半導体ウェーハ用のサポート治具を提供することを目的としている。   The present invention has been made in view of the above. A support jig for a semiconductor wafer that can eliminate the risk of deformation of a holding frame when used in a heating process and can reduce the weight to improve productivity. It is intended to provide.

本発明においては上記課題を解決するため、相互に嵌合する内保持枠と外保持枠との間に、半導体ウェーハを保持する耐熱性のエラストマー層を着脱自在に挟み持ち、少なくとも加熱工程で使用されるものであって、
内保持枠と外保持枠とを、ASTM規格のASTM D648における荷重撓み温度が略300℃以上、及びASTM D790における曲げ強度が120MPa以上である樹脂含有の成形材料を使用してそれぞれ成形したことを特徴としている。
なお、内保持枠と外保持枠の成形材料を、液晶性全芳香族ポリエステル樹脂にガラス繊維を混合して調製することができる。
In the present invention, in order to solve the above-mentioned problem, a heat-resistant elastomer layer for holding a semiconductor wafer is detachably sandwiched between an inner holding frame and an outer holding frame that are fitted to each other, and used at least in a heating process. Which is
The inner holding frame and the outer holding frame were molded using resin-containing molding materials having a load deflection temperature of about 300 ° C. or higher in ASTM standard ASTM D648 and a bending strength of 120 MPa or higher in ASTM D790, respectively. It is a feature.
In addition, the molding material of an inner holding frame and an outer holding frame can be prepared by mixing glass fiber with a liquid crystalline wholly aromatic polyester resin.

ここで、特許請求の範囲における内保持枠と外保持枠とは、平面リング形や枠形等とすることができる。半導体ウェーハは、φ200、300、450mmタイプ等を特に問うものではなく、又平面円形が主ではあるが、エラストマー層の脱落等の問題を生じなければ、矩形や多角形等でも良い。さらに、エラストマー層は、透明、不透明、半透明のいずれでも良い。   Here, the inner holding frame and the outer holding frame in the claims can be a flat ring shape, a frame shape, or the like. The semiconductor wafer is not particularly limited to a φ200, 300, 450 mm type or the like, and is mainly a planar circle, but may be a rectangle or a polygon as long as it does not cause a problem such as dropping off of the elastomer layer. Furthermore, the elastomer layer may be transparent, opaque, or translucent.

本発明によれば、加熱工程で使用する場合に保持枠である内保持枠と外保持枠の変形するおそれを払拭し、重量を軽減して生産性の向上を図ることができるという効果がある。   According to the present invention, when used in the heating process, there is an effect that the inner holding frame and the outer holding frame, which are holding frames, can be wiped out, the weight can be reduced, and productivity can be improved. .

本発明に係る半導体ウェーハ用のサポート治具の実施形態におけるハンダリフロー装置等を模式的に示す説明図である。It is explanatory drawing which shows typically the solder reflow apparatus etc. in embodiment of the support jig for semiconductor wafers concerning this invention. 本発明に係る半導体ウェーハ用のサポート治具の実施形態を模式的に示す断面説明図である。It is a section explanatory view showing typically an embodiment of a support jig for semiconductor wafers concerning the present invention.

以下、図面を参照して本発明の実施形態を説明すると、本実施形態における半導体ウェーハ用のサポート治具は、図1や図2に示すように、相互に嵌合する保持枠である内保持枠1と外保持枠2とを備え、これら内保持枠1と外保持枠2との間に、薄い半導体ウェーハWを保持する耐熱性のエラストマー層3を緊張状態に挟持し、少なくともハンダリフロー装置10を用いる加熱工程で使用される。   DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. A support jig for a semiconductor wafer in the present embodiment is an internal holding which is a holding frame that fits together as shown in FIG. 1 and FIG. A frame 1 and an outer holding frame 2 are provided, and a heat-resistant elastomer layer 3 holding a thin semiconductor wafer W is sandwiched between the inner holding frame 1 and the outer holding frame 2 in a tension state, and at least a solder reflow apparatus 10 is used in the heating step.

内保持枠1と外保持枠2とは、ASTM(米国試験・材料協会;American Society for Testing and Materials)規格のASTM D648における荷重撓み温度が300℃以上、及びASTM D790における曲げ強度が120MPa以上である樹脂含有の成形材料を使用してそれぞれ平面リング形に射出成形され、内保持枠1の外側に外保持枠2が着脱自在に嵌合する。   The inner holding frame 1 and the outer holding frame 2 have an ASTM (American Society for Testing and Materials) standard ASTM D648 load bending temperature of 300 ° C. or higher, and a bending strength of ASTM D790 of 120 MPa or higher. Each resin-containing molding material is injection-molded into a flat ring shape, and the outer holding frame 2 is detachably fitted to the outer side of the inner holding frame 1.

内保持枠1と外保持枠2の具体的な成形材料は、優れた耐熱性と軽量性を得ることができるよう、例えば溶融した液晶性全芳香族ポリエステル樹脂にガラス繊維が混合分散されることによりコンパウンドに調製され、内保持枠1あるいは外保持枠2を射出成形する図示しない成形機に充填される。   The specific molding material for the inner holding frame 1 and the outer holding frame 2 is such that glass fibers are mixed and dispersed in, for example, molten liquid crystalline wholly aromatic polyester resin so that excellent heat resistance and light weight can be obtained. To prepare a compound and fill the molding machine (not shown) for injection molding the inner holding frame 1 or the outer holding frame 2.

半導体ウェーハWは、特に限定されるものではないが、例えばφ300mmタイプのシリコンウェーハからなり、表面に回路パターンが形成され、裏面がバックグラインドされており、ダイアタッチ材を硬化する工程、ハンダペーストの印刷後にハンダペーストの微小ハンダ粒をハンダ塊に溶融再固化するためのハンダリフロー工程等に供される。   The semiconductor wafer W is not particularly limited. For example, the semiconductor wafer W is made of a φ300 mm type silicon wafer, a circuit pattern is formed on the front surface, the back surface is back-ground, a step of curing the die attach material, solder paste After printing, the solder paste is subjected to a solder reflow process or the like for melting and re-solidifying the fine solder particles of the solder paste into a solder lump.

エラストマー層3は、250℃程度の加熱温度に耐え得るシリコーンゴムやフッ素ゴム等のエラストマーを使用して可撓性の丸い薄膜に成形され、内保持枠1と外保持枠2との間に周縁部が着脱自在に挟持されており、薄く撓みやすい半導体ウェーハWの裏面を粘着保持する。   The elastomer layer 3 is formed into a flexible round thin film using an elastomer such as silicone rubber or fluorine rubber that can withstand a heating temperature of about 250 ° C., and a peripheral edge between the inner holding frame 1 and the outer holding frame 2. The part is detachably held, and the back surface of the thin and easily bent semiconductor wafer W is adhered and held.

上記構成において、サポート治具に半導体ウェーハWを保持させ、ハンダリフロー装置10にセットする場合には、内保持枠1と外保持枠2との間に、半導体ウェーハWを保持したエラストマー層3を緊張状態に挟持してその食み出た余剰部をカットすれば、サポート治具に半導体ウェーハWを保持させ、常温で半導体ウェーハWに各種加工を施すことができる。   In the above configuration, when the semiconductor wafer W is held by the support jig and set in the solder reflow apparatus 10, the elastomer layer 3 holding the semiconductor wafer W is interposed between the inner holding frame 1 and the outer holding frame 2. If the excess portion that is pinched in a tension state and cut off is cut, the semiconductor wafer W can be held on the support jig, and various processes can be performed on the semiconductor wafer W at room temperature.

また、ハンダリフロー装置10のベルトコンベアにサポート治具をセットすれば、このサポート治具がベルトコンベアにより装置内の250℃程度で加熱する加熱炉に搬送され、半導体ウェーハWの表面に印刷されたハンダペーストの微小ハンダ粒がハンダ塊に溶融再固化される。   Further, if a support jig is set on the belt conveyor of the solder reflow apparatus 10, the support jig is conveyed to a heating furnace heated at about 250 ° C. by the belt conveyor and printed on the surface of the semiconductor wafer W. The fine solder particles of the solder paste are melted and re-solidified into a solder lump.

上記構成によれば、サポート治具の内保持枠1と外保持枠2とをASTM D648における荷重撓み温度が300℃以上、かつASTM D790における曲げ強度が120MPa以上である成形材料で成形するので、優れた耐熱性と強度を得ることができ、例えハンダリフロー工程等の加熱工程で使用される場合にも、内保持枠1と外保持枠2が変形することがない。したがって、内保持枠1と外保持枠2からエラストマー層3が外れたり、半導体ウェーハWが脱落するおそれがない。   According to the above configuration, the inner holding frame 1 and the outer holding frame 2 of the support jig are molded with a molding material having a load deflection temperature in ASTM D648 of 300 ° C. or higher and a bending strength in ASTM D790 of 120 MPa or higher. Excellent heat resistance and strength can be obtained, and the inner holding frame 1 and the outer holding frame 2 are not deformed even when used in a heating process such as a solder reflow process. Therefore, there is no possibility that the elastomer layer 3 comes off from the inner holding frame 1 and the outer holding frame 2 or the semiconductor wafer W falls off.

また、内保持枠1と外保持枠2とをそれぞれ金属で加工する必要がないので、これら内保持枠1と外保持枠2の重量増大を有効に抑制し、製造コストを削減することができる。したがって、ハンダリフロー装置10のベルトコンベアにサポート治具をセットしても、このサポート治具の重量でベルトコンベアが停止したり、遅延するおそれがない。さらに、ベルトコンベアの搬送速度が低下して所定のリフロー条件を満たさなくなり、生産性が低下するのを防止することができる。   Moreover, since it is not necessary to process the inner holding frame 1 and the outer holding frame 2 with metal, it is possible to effectively suppress an increase in weight of the inner holding frame 1 and the outer holding frame 2 and to reduce manufacturing costs. . Therefore, even if the support jig is set on the belt conveyor of the solder reflow apparatus 10, there is no possibility that the belt conveyor stops or is delayed by the weight of the support jig. Further, it is possible to prevent the productivity of the belt conveyor from being lowered because the conveying speed of the belt conveyor is lowered and the predetermined reflow condition is not satisfied.

次に、本発明に係る半導体ウェーハ用のサポート治具の実施例を比較例と共に説明する。   Next, an example of a support jig for a semiconductor wafer according to the present invention will be described together with a comparative example.

先ず、サポート治具の内保持枠と外保持枠とを成形するため、溶融した液晶性全芳香族ポリエステル樹脂にガラス繊維を混合分散することにより、ASTM D648における荷重撓み温度が338℃、かつASTM D790における曲げ強度が126MPaのコンパウンドAを調製し、このコンパウンドAにより、内保持枠と外保持枠とをそれぞれ射出成形した。   First, in order to form the inner holding frame and the outer holding frame of the support jig, glass fiber is mixed and dispersed in the molten liquid crystalline wholly aromatic polyester resin, so that the load deflection temperature in ASTM D648 is 338 ° C. and ASTM A compound A having a bending strength of 126 MPa at D790 was prepared, and the inner holding frame and the outer holding frame were each injection-molded with this compound A.

こうして内保持枠と外保持枠とを射出成形したら、これら内保持枠と外保持枠との間に、エラストマー層を緊張状態に挟持してその食み出た余剰部をカットし、250℃の耐熱環境に10分間放置して変形やエラストマー層の脱落を観察し、その結果を表1にまとめた。   When the inner holding frame and the outer holding frame are injection molded in this way, the elastomer layer is sandwiched between the inner holding frame and the outer holding frame in a tension state, and the protruding excess portion is cut off at 250 ° C. The samples were left in a heat-resistant environment for 10 minutes to observe deformation and dropping off of the elastomer layer.

先ず、サポート治具の内保持枠と外保持枠とを成形するため、溶融した液晶性全芳香族ポリエステル樹脂にガラス繊維を混合分散することにより、ASTM D648における荷重撓み温度が312℃、かつASTM D790における曲げ強度が138MPaのコンパウンドBを調製し、このコンパウンドBにより、内保持枠と外保持枠とをそれぞれ射出成形した。   First, in order to mold the inner holding frame and the outer holding frame of the support jig, glass fiber is mixed and dispersed in the molten liquid crystalline wholly aromatic polyester resin, whereby the load deflection temperature in ASTM D648 is 312 ° C. and ASTM Compound B having a bending strength of 138 MPa at D790 was prepared, and the inner holding frame and the outer holding frame were each injection-molded with this compound B.

こうして内保持枠と外保持枠とを射出成形したら、これら内保持枠と外保持枠との間に、エラストマー層を緊張状態に挟持してその食み出た余剰部をカットし、250℃の耐熱環境に10分間放置して変形やエラストマー層の脱落を観察し、その結果を表1にまとめた。   When the inner holding frame and the outer holding frame are injection molded in this way, the elastomer layer is sandwiched between the inner holding frame and the outer holding frame in a tension state, and the protruding excess portion is cut off at 250 ° C. The samples were left in a heat-resistant environment for 10 minutes to observe deformation and dropping off of the elastomer layer.

比較例1Comparative Example 1

先ず、サポート治具の内保持枠と外保持枠とを成形するため、溶融した液晶性全芳香族ポリエステル樹脂にガラス繊維を混合分散することにより、ASTM D648における荷重撓み温度が275℃、かつASTM D790における曲げ強度が140MPaのコンパウンドCを調製し、このコンパウンドCにより、内保持枠と外保持枠とをそれぞれ射出成形した。   First, in order to mold the inner holding frame and the outer holding frame of the support jig, glass fiber is mixed and dispersed in the molten liquid crystalline wholly aromatic polyester resin, so that the load deflection temperature in ASTM D648 is 275 ° C. and ASTM Compound C having a bending strength of 140 MPa at D790 was prepared, and the inner holding frame and the outer holding frame were each injection-molded by this compound C.

内保持枠と外保持枠とを射出成形したら、これら内保持枠と外保持枠との間に、エラストマー層を緊張状態に挟持してその食み出た余剰部をカットし、250℃の耐熱環境に10分間放置して変形やエラストマー層の脱落を観察し、その結果を表1にまとめた。   When the inner holding frame and the outer holding frame are injection-molded, the elastomer layer is sandwiched between the inner holding frame and the outer holding frame in a tensioned state, and the excess portion that protrudes is cut, and the heat resistance at 250 ° C. The samples were left in the environment for 10 minutes to observe deformation and dropping of the elastomer layer. The results are summarized in Table 1.

比較例2Comparative Example 2

サポート治具の内保持枠と外保持枠とを成形するため、ノナンジアミン(炭素数9のジアミン)とテレフタル酸とで調製したナイロン9T樹脂にガラス繊維を混合分散することにより、ASTM D648における荷重撓み温度が290℃、かつASTM D790における曲げ強度が210MPaのコンパウンドDを調製し、このコンパウンドDにより、内保持枠と外保持枠とをそれぞれ射出成形した。その他の部分は比較例1と同様にしてその結果を表1に記載した。   Load molding in ASTM D648 by mixing and dispersing glass fiber in nylon 9T resin prepared with nonanediamine (diamine having 9 carbon atoms) and terephthalic acid to form the inner holding frame and the outer holding frame of the support jig. A compound D having a temperature of 290 ° C. and a bending strength of 210 MPa according to ASTM D790 was prepared, and the inner holding frame and the outer holding frame were respectively injection molded by this compound D. The other parts were the same as in Comparative Example 1, and the results are shown in Table 1.

比較例3Comparative Example 3

サポート治具の内保持枠と外保持枠とを成形するため、溶融した液晶性全芳香族ポリエステル樹脂にガラス繊維を混合分散することにより、ASTM D648における荷重撓み温度が350℃、かつASTM D790における曲げ強度が93MPaのコンパウンドEを調製し、このコンパウンドEにより、内保持枠と外保持枠とをそれぞれ射出成形した。その他の部分は比較例1と同様にしてその結果を表1に記載した。   In order to mold the inner holding frame and the outer holding frame of the support jig, glass load is mixed and dispersed in the molten liquid crystalline wholly aromatic polyester resin so that the load deflection temperature in ASTM D648 is 350 ° C. and in ASTM D790. A compound E having a bending strength of 93 MPa was prepared, and the inner holding frame and the outer holding frame were each injection-molded with the compound E. The other parts were the same as in Comparative Example 1, and the results are shown in Table 1.

Figure 2010287587
Figure 2010287587

表1から明らかなように、実施例1、2の場合には、内保持枠と外保持枠とが変形することなく適切に嵌合し、エラストマー層が脱落することはなかった。
これに対し、比較例1、2、3の場合には、内保持枠と外保持枠が変形したり、エラストマー層が緩んで脱落した。
As is clear from Table 1, in the case of Examples 1 and 2, the inner holding frame and the outer holding frame were appropriately fitted without deformation, and the elastomer layer did not fall off.
On the other hand, in Comparative Examples 1, 2, and 3, the inner holding frame and the outer holding frame were deformed, or the elastomer layer was loosened and dropped off.

1 内保持枠
2 外保持枠
3 エラストマー層
10 ハンダリフロー装置
W 半導体ウェーハ
DESCRIPTION OF SYMBOLS 1 Inner holding frame 2 Outer holding frame 3 Elastomer layer 10 Solder reflow apparatus W Semiconductor wafer

Claims (2)

相互に嵌合する内保持枠と外保持枠との間に、半導体ウェーハを保持する耐熱性のエラストマー層を着脱自在に挟み持ち、少なくとも加熱工程で使用される半導体ウェーハ用のサポート治具であって、
内保持枠と外保持枠とを、ASTM規格のASTM D648における荷重撓み温度が略300℃以上、及びASTM D790における曲げ強度が120MPa以上である樹脂含有の成形材料を使用してそれぞれ成形したことを特徴とする半導体ウェーハ用のサポート治具。
A heat-resistant elastomer layer for holding a semiconductor wafer is detachably sandwiched between an inner holding frame and an outer holding frame that are fitted to each other. And
The inner holding frame and the outer holding frame were molded using resin-containing molding materials having a load deflection temperature of about 300 ° C. or higher in ASTM standard ASTM D648 and a bending strength of 120 MPa or higher in ASTM D790, respectively. A support jig for semiconductor wafers.
内保持枠と外保持枠の成形材料を、液晶性全芳香族ポリエステル樹脂にガラス繊維を混合して調製した請求項1記載の半導体ウェーハ用のサポート治具。   The support jig for a semiconductor wafer according to claim 1, wherein the molding material for the inner holding frame and the outer holding frame is prepared by mixing glass fiber with liquid crystalline wholly aromatic polyester resin.
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