JP2010277956A - Organic electroluminescent display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL display device having excellent adhesion between a substrate and a sealing member, and excellent sealing performance for an organic EL element. <P>SOLUTION: This organic electroluminescent display device includes: the substrate 1 on the surface of which a pair of electrodes, an organic electroluminescent element having an organic compound layer 53 including an electroluminescent layer between the pair of the electrodes, and insulating member 44 are disposed; and a sealing member 41. The insulating member 44 is disposed at least in the periphery part of the organic electroluminescent element region, the sealing member 41 has a low melting point metal layer 42 in the portion corresponding to the insulating member 44, the insulating member 44 has a metal layer 43 containing a metal to form a metal intercalation layer compound with a metal contained in the low melting point metal layer 42 on the side opposite to the substrate 1, and the metal layer 43 of the insulating member 44 is bonded to the low melting point metal layer 42 of the sealing member 41 to seal the organic electroluminescent element. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an organic electroluminescent display device.

An organic electroluminescent (hereinafter, sometimes referred to as “organic EL”) display device is a self-luminous display device, and is used for display and lighting applications. The organic EL display has advantages in display performance such as high visibility and no viewing angle dependency as compared with a conventional CRT or LCD. There is also an advantage that the display can be reduced in weight and thickness. In addition to the advantages of light weight and thin layers, organic EL lighting has the potential to realize illumination in a shape that could not be realized so far by using a flexible substrate.
The organic EL display device has excellent characteristics as described above. However, since the organic EL element used in the organic EL display device is deteriorated by heat, light, moisture, oxygen, or the like, it is necessary to suppress the deterioration. .

In order to suppress deterioration of the organic EL element, an organic EL device that prevents moisture and oxygen from entering the organic EL element by disposing a sealing metal on a side wall composed of a fixing layer and a sealing plate on the substrate. (Refer to Patent Document 1) or an organic EL element in which a glass sheet is used as a sealing member, and an outer peripheral end surface of the glass sheet and a substrate surface on which the organic EL element is formed are sealed with a low melting point metal (Patent Document) 2) has been proposed.
However, in these proposals, there is a problem that the sealing member and the substrate are not sufficiently adhered to each other, and therefore, the sealing performance is not satisfactory.

  In the organic EL display device, if the adhesion and sealing performance are insufficient even at one place, the entire device is affected. Therefore, the sealing member has excellent adhesion of the sealing member and excellent sealing performance of the organic EL element. At present, there is a strong demand for the development of organic EL display devices.

JP 2005-322580 A JP 2005-322464 A

  An object of the present invention is to solve the above-described problems and achieve the following objects. That is, an object of the present invention is to provide an organic EL display device having excellent adhesion between a substrate and a sealing member and having excellent sealing performance of an organic EL element.

Means for solving the problems are as follows. That is,
<1> An organic electric field comprising an organic electroluminescent device having a pair of electrodes and an organic compound layer including a light emitting layer between the pair of electrodes, a substrate on which an insulating member is disposed, and a sealing member. A light emitting display device,
The insulating member is disposed at least on the outer periphery of the organic electroluminescent element region;
The sealing member has a low melting point metal layer at least in a portion corresponding to the insulating member;
The insulating member has a metal layer containing a metal that forms a metal intercalation compound with a metal contained in the low-melting-point metal layer on a surface opposite to the substrate;
The organic electroluminescent display device is characterized in that the organic electroluminescent element is sealed by bonding a metal layer of the insulating member and a low melting point metal layer of the sealing member.
In the organic electroluminescent display device according to <1>, the entire organic electroluminescent element region is sealed by bonding the low melting point metal layer of the sealing member and the metal layer of the insulating member.
<2> The organic electric field according to <1>, wherein the insulating member is formed by laminating a layer made of the same component as the one electrode of the organic electroluminescent element on the surface opposite to the substrate and a metal layer in this order. A light-emitting display device.
In the organic electroluminescence display device according to the above <2>, a layer made of the same component as one electrode of the organic electroluminescence element on the surface opposite to the substrate of the insulating member is used as an auxiliary wiring in the case of the top emission method. And has a heat dissipation function. In the case of the bottom emission method, it has a heat dissipation action.
<3> Further, the organic electroluminescent display device according to any one of <1> to <2>, wherein the insulating member is disposed inside the organic electroluminescent element region.
In the organic electroluminescent display device according to <3>, the insulating member is disposed inside the organic electroluminescent element region, and the metal layer of the insulating member and the low melting point metal layer of the sealing member are joined together. Each of the plurality of organic electroluminescent elements is sealed.
<4> Further, the organic electroluminescent display device according to any one of <1> to <3>, wherein the insulating member is disposed in a portion adjacent to each organic electroluminescent element.
In the organic electroluminescent display device according to <4>, the insulating member is disposed in a portion adjacent to each organic electroluminescent element, and the metal layer of the insulating member and the low melting point metal layer of the sealing member are joined. By this, it seals for every organic electroluminescent element.
<5> The organic electroluminescent display device according to any one of <1> to <4>, wherein the insulating member disposed on the outer peripheral portion of the organic electroluminescent element region is not adjacent to the organic electroluminescent element.
In the organic electroluminescent display device according to <5>, the insulating member disposed on the outer peripheral portion of the organic electroluminescent element region that is not adjacent to the organic electroluminescent element provides a bonding between the substrate and the sealing member. Will be strengthened.
<6> The organic electroluminescence display device according to any one of <1> to <5>, wherein the insulating member has a tapered shape.
In the organic electroluminescence display device according to <6>, the insulating member has a tapered shape, whereby the bonding between the substrate and the sealing member is reinforced.
<7> The organic electroluminescence display device according to any one of <1> to <6>, wherein one surface of the sealing member has a low melting point metal layer.
The organic electroluminescence display device according to <7> is a bottom emission method in which light emitted from the light emitting layer passes through an electrode on a substrate side, and light that has passed through the electrode passes through the substrate.
<8> The organic electroluminescence display device according to any one of <1> to <7>, wherein the metal layer of the insulating member and the low-melting-point metal layer of the sealing member are joined by a laser.

  According to the present invention, the above-mentioned problems can be solved, the above-mentioned object can be achieved, the organic EL element has excellent adhesion between the substrate and the sealing member, and has excellent sealing performance of the organic EL element. An EL display device can be provided.

FIG. 1 is a view for explaining an embodiment in which an insulating member is disposed on the outer peripheral portion of the organic EL element region, and is a cross-sectional view parallel to the substrate surface. FIG. 2 is a view for explaining an embodiment in which the insulating member is further disposed inside the organic EL element region, and is a cross-sectional view parallel to the substrate surface. FIG. 3 is a view for explaining an embodiment in which an insulating member is further arranged in a portion adjacent to each organic EL element, and is a cross-sectional view parallel to the substrate surface. FIG. 4A is a view for specifically explaining an embodiment of a preferable shape of the insulating member, and is a view showing the insulating member in the A-A ′ cross section in FIG. 3 (part 1). FIG. 4B is a view for specifically explaining an embodiment of a preferable shape of the insulating member, and is a view showing the insulating member in the A-A ′ section in FIG. 3 (part 2). FIG. 5A is a diagram illustrating an embodiment of an arrangement of insulating members. FIG. 5B is a diagram showing another embodiment of the arrangement of the insulating members. FIG. 6A is a diagram showing an embodiment of a configuration of a bottom emission type organic EL display device. FIG. 6B is a diagram showing another embodiment of the configuration of the bottom emission type organic EL display device. FIG. 7 is a diagram showing an embodiment of a configuration of a top emission type organic EL display device. FIG. 8A is a diagram illustrating an example of a method of manufacturing an organic EL TFT substrate and a lower electrode in an organic EL display device (part 1). FIG. 8B is a diagram illustrating an example of a method of manufacturing an organic EL TFT substrate and a lower electrode in an organic EL display device (part 2). FIG. 8C is a diagram illustrating an example of a method of manufacturing an organic EL TFT substrate and a lower electrode in an organic EL display device (part 3). FIG. 8D is a diagram illustrating an example of a method of manufacturing an organic EL TFT substrate and a lower electrode in an organic EL display device (part 4).

(Organic EL display device)
The organic electroluminescence (organic EL) display device has at least an organic EL element, a substrate on which an insulating member is disposed, and a sealing member, and further includes other members as necessary. Have.

<Board>
The substrate is formed by arranging at least an organic EL element and an insulating member on the surface, and further arranging other members as necessary.

There is no restriction | limiting in particular as said board | substrate, Although it can select suitably according to the objective, It is preferable that it is a board | substrate which does not scatter or attenuate the light emitted from an organic compound layer. Specific examples include yttria-stabilized zirconia (YSZ), inorganic materials such as glass, polyesters such as polyethylene terephthalate, polybutylene phthalate, and polyethylene naphthalate, polystyrene, polycarbonate, polyethersulfone, polyarylate, polyimide, and polycycloolefin. , Norbornene resins, and organic materials such as poly (chlorotrifluoroethylene).
For example, when glass is used as the substrate, alkali-free glass is preferably used as the material in order to reduce ions eluted from the glass. Moreover, when using soda-lime glass, it is preferable to use what gave barrier coatings, such as a silica. In the case of an organic material, it is preferable that it is excellent in heat resistance, dimensional stability, solvent resistance, electrical insulation, and workability.

  There is no restriction | limiting in particular about the shape of a board | substrate, a structure, a magnitude | size, It can select suitably according to the use, purpose, etc. of a light emitting element. In general, the shape of the substrate is preferably a plate shape. The structure of the substrate may be a single layer structure, a laminated structure, may be formed of a single member, or may be formed of two or more members.

  The substrate may be colorless and transparent or colored and transparent, but is preferably colorless and transparent in that it does not scatter or attenuate light emitted from the light emitting layer.

The substrate can be provided with a moisture permeation preventing layer (gas barrier layer) on the front surface or the back surface.
As a material for the moisture permeation preventive layer (gas barrier layer), inorganic materials such as silicon nitride and silicon oxide are preferably used. The moisture permeation preventing layer (gas barrier layer) can be formed by, for example, a high frequency sputtering method.
When a thermoplastic substrate is used, a hard coat layer, an undercoat layer, or the like may be further provided as necessary.
When a TFT is formed on a substrate, a passivation layer can be provided on the base.

<< Organic EL element >>
The organic EL element has a pair of electrodes (a cathode and an anode), and an organic compound layer including an organic light emitting layer (hereinafter sometimes simply referred to as “light emitting layer”) between both electrodes. In view of the properties of the light emitting element, at least one of the anode and the cathode is preferably transparent.

The organic compound layer is preferably laminated in the order of the hole transport layer, the light emitting layer, and the electron transport layer from the anode side. Further, a hole injection layer is provided between the hole transport layer and the anode, and / or an electron transporting intermediate layer is provided between the light emitting layer and the electron transport layer. In addition, a hole transporting intermediate layer may be provided between the light emitting layer and the hole transport layer, and similarly, an electron injection layer may be provided between the cathode and the electron transport layer.
Each layer may be divided into a plurality of secondary layers.

  Each layer constituting the organic compound layer can be suitably formed by any of dry film forming methods such as vapor deposition and sputtering, transfer methods, printing methods, coating methods, ink jet methods, and spray methods.

<<< Anode >>>
The anode usually has a function as an electrode for supplying holes to the organic compound layer, and there is no particular limitation on the shape, structure, size, etc., depending on the use and purpose of the light-emitting element. , Can be appropriately selected from known electrode materials. As described above, the anode is usually provided as a transparent anode.

  Suitable examples of the material for the anode include metals, alloys, metal oxides, conductive compounds, and mixtures thereof. Specific examples of the anode material include conductive metals such as tin oxide doped with antimony and fluorine (ATO, FTO), tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO). Metals such as oxides, gold, silver, chromium, nickel, and mixtures or laminates of these metals and conductive metal oxides, inorganic conductive materials such as copper iodide and copper sulfide, polyaniline, polythiophene, polypyrrole, etc. Organic conductive materials, and a laminate of these and ITO. Among these, conductive metal oxides are preferable, and ITO is particularly preferable from the viewpoints of productivity, high conductivity, transparency, and the like.

  The anode is composed of, for example, a wet method such as a printing method and a coating method, a physical method such as a vacuum deposition method, a sputtering method, and an ion plating method, and a chemical method such as a CVD and a plasma CVD method. It can be formed on the substrate according to a method appropriately selected in consideration of suitability with the material to be processed. For example, when ITO is selected as the anode material, the anode can be formed according to a direct current or high frequency sputtering method, a vacuum deposition method, an ion plating method, or the like.

  In the organic EL element, the formation position of the anode is not particularly limited and can be appropriately selected according to the use and purpose of the light-emitting element, but is preferably formed on the substrate. In this case, the anode may be formed on the entire one surface of the substrate, or may be formed on a part thereof.

  The patterning for forming the anode may be performed by chemical etching such as photolithography, or may be performed by physical etching such as laser, or vacuum deposition or sputtering with a mask overlapped. It may be performed by a lift-off method or a printing method.

  The thickness of the anode can be appropriately selected depending on the material constituting the anode and cannot be generally defined, but is usually about 10 nm to 50 μm, and preferably 50 nm to 20 μm.

The resistance value of the anode is preferably 10 ³ Ω / □ or less, and more preferably 10 ² Ω / □ or less. When the anode is transparent, it may be colorless and transparent or colored and transparent. In order to take out light emission from the transparent anode side, the transmittance is preferably 60% or more, and more preferably 70% or more.

  The transparent anode is detailed in Yutaka Sawada's “New Development of Transparent Conductive Film” published by CMC (1999), and the matters described here can be applied to the present invention. In the case of using a plastic substrate having low heat resistance, a transparent anode formed using ITO or IZO at a low temperature of 150 ° C. or lower is preferable.

<<< cathode >>>
The cathode usually has a function as an electrode for injecting electrons into the organic compound layer, and there is no particular limitation on the shape, structure, size, etc., depending on the use and purpose of the light-emitting element, It can select suitably from well-known electrode materials.

  Examples of the material constituting the cathode include metals, alloys, metal oxides, electrically conductive compounds, and mixtures thereof. Specific examples include alkali metals (eg, Li, Na, K, Cs, etc.), alkaline earth metals (eg, Mg, Ca, etc.), gold, silver, lead, aluminum, sodium-potassium alloys, lithium-aluminum alloys, magnesium. -Rare earth metals such as silver alloys, indium and ytterbium. These may be used alone, but two or more can be suitably used in combination from the viewpoint of achieving both stability and electron injection.

Among these, as a material constituting the cathode, an alkali metal or an alkaline earth metal is preferable from the viewpoint of electron injecting property, and a material mainly composed of aluminum is preferable from the viewpoint of excellent storage stability.
The material mainly composed of aluminum is aluminum alone, an alloy of aluminum and 0.01% by mass to 10% by mass of alkali metal or alkaline earth metal, or a mixture thereof (for example, lithium-aluminum alloy, magnesium-aluminum alloy). Etc.).

  The cathode materials are described in detail in JP-A-2-15595 and JP-A-5-121172, and the materials described in these publications can also be applied in the present invention.

  There is no restriction | limiting in particular about the formation method of a cathode, According to a well-known method, it can carry out. For example, the cathode described above is configured from a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method, or an ion plating method, or a chemical method such as CVD or plasma CVD method. It can be formed according to a method appropriately selected in consideration of suitability with the material. For example, when a metal or the like is selected as the cathode material, one or more of them can be simultaneously or sequentially performed according to a sputtering method or the like.

  Patterning when forming the cathode may be performed by chemical etching such as photolithography, physical etching by laser, or the like, or by vacuum deposition or sputtering with the mask overlaid. It may be performed by a lift-off method or a printing method.

In the organic EL element, the cathode forming position is not particularly limited, and may be formed on the entire organic compound layer or a part thereof.
Further, a dielectric layer made of an alkali metal or alkaline earth metal fluoride or oxide may be inserted between the cathode and the organic compound layer with a thickness of 0.1 nm to 5 nm. This dielectric layer can also be regarded as a kind of electron injection layer. The dielectric layer can be formed by, for example, a vacuum deposition method, a sputtering method, an ion plating method, or the like.

The thickness of the cathode can be appropriately selected depending on the material constituting the cathode and cannot be generally defined, but is usually about 10 nm to 5 μm, and preferably 50 nm to 1 μm.
Further, the cathode may be transparent or opaque. The transparent cathode can be formed by depositing a thin cathode material to a thickness of 1 nm to 10 nm and further laminating a transparent conductive material such as ITO or IZO.

<<< Organic compound layer >>>
The organic EL element has at least one organic compound layer including a light emitting layer, and other organic compound layers other than the light emitting layer include a hole transport layer, an electron transport layer, a charge blocking layer, and a hole injection layer. Each layer includes an electron injection layer and a layer.

  In the organic EL element, each layer constituting the organic compound layer can be suitably formed by any of a dry film forming method such as a vapor deposition method and a sputtering method, a wet coating method, a transfer method, a printing method, and an ink jet method. .

<<<<< light emitting layer >>>>
The light-emitting layer receives holes from an anode, a hole injection layer, or a hole transport layer when an electric field is applied, receives electrons from a cathode, an electron injection layer, or an electron transport layer, and recombines holes and electrons. It is a layer having a function of providing a field to emit light.
The light emitting layer may be composed only of a light emitting material, or may be a mixed layer of a host material and a light emitting dopant. The luminescent dopant may be a fluorescent material or a phosphorescent material, and may be two or more kinds. The host material is preferably a charge transport material. The host material may be one type or two or more types, and examples thereof include a configuration in which an electron transporting host material and a hole transporting host material are mixed. Furthermore, the light emitting layer may include a material that does not have charge transporting properties and does not emit light.
Further, the light emitting layer may be a single layer or two or more layers, and each layer may emit light in different emission colors.

As the luminescent dopant, any of a phosphorescent luminescent material, a fluorescent luminescent material, and the like can be used as a dopant (phosphorescent dopant, fluorescent luminescent dopant).
The light emitting layer may contain two or more kinds of luminescent dopants in order to improve the color purity and widen the light emission wavelength region. The luminescent dopant further has an ionization potential difference (ΔIp) and an electron affinity difference (ΔEa) of 1.2 eV>ΔIp> 0.2 eV and / or 1.2 eV> with the host compound. A dopant satisfying the relationship of ΔEa> 0.2 eV is preferable from the viewpoint of driving durability.

In general, examples of the phosphorescent dopant include complexes containing a transition metal atom or a lanthanoid atom.
The transition metal atom is not particularly limited and may be appropriately selected depending on the purpose, but is preferably ruthenium, rhodium, palladium, tungsten, rhenium, osmium, iridium, gold, silver, copper, platinum, Iridium and platinum are more preferable, and iridium and platinum are more preferable.
The lanthanoid atom is not particularly limited and may be appropriately selected depending on the purpose.For example, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, Lutesium. Among these lanthanoid atoms, neodymium, europium, and gadolinium are preferable.

Examples of the ligand of the complex include G.I. Wilkinson et al., Comprehensive Coordination Chemistry, Pergamon Press, 1987, H.C. Examples include ligands described in Yersin's "Photochemistry and Photophysics of Coordination Compounds" published by Springer-Verlag 1987, Akio Yamamoto "Organic Metal Chemistry-Fundamentals and Applications-" .
Examples of the ligand include a halogen ligand (preferably a chlorine ligand), an aromatic carbocyclic ligand (for example, a cyclopentadienyl anion, a benzene anion, a naphthyl anion, etc.). Preferably 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms), nitrogen-containing heterocyclic ligands (for example, phenylpyridine, benzoquinoline, quinolinol, bipyridyl) Phenanthroline and the like, preferably having 5 to 30 carbon atoms, more preferably having 6 to 30 carbon atoms, still more preferably having 6 to 20 carbon atoms, and particularly preferably having 6 to 12 carbon atoms, and a diketone ligand (for example, Acetylacetone and the like), carboxylic acid ligands (for example, acetic acid ligands and the like, preferably having 2 to 30 carbon atoms, -20 are more preferable, C2-C16 is still more preferable), an alcoholate ligand (For example, phenolate ligand etc. are mentioned, C1-C30 is preferable, C1-C20 is more preferable, Carbon 6 to 20 are more preferable), silyloxy ligands (for example, trimethylsilyloxy ligand, dimethyl-tert-butylsilyloxy ligand, triphenylsilyloxy ligand, etc.). Preferably 3 to 30 carbon atoms, more preferably 3 to 20 carbon atoms), carbon monoxide ligand, isonitrile ligand, cyano ligand, phosphorus ligand (for example, triphenylphosphine) Ligands, etc. are mentioned, 3 to 40 carbon atoms are preferred, 3 to 30 carbon atoms are more preferred, 3 to 20 carbon atoms are more preferred, and 6 to 20 carbon atoms are particularly preferred. Thiolato ligand (for example, phenylthiolato ligand, etc., preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and further preferably 6 to 20 carbon atoms), phosphine Preferred are oxide ligands (for example, triphenylphosphine oxide ligands, preferably 3 to 30 carbon atoms, more preferably 8 to 30 carbon atoms, and still more preferably 18 to 30 carbon atoms). Nitrogen heterocyclic ligands are more preferred.
The complex may have one transition metal atom in the compound, or may be a so-called binuclear complex having two or more. Different metal atoms may be contained at the same time.

  Among these, as the luminescent dopant, for example, US6303238B1, US6097147, WO00 / 57676, WO00 / 70655, WO01 / 08230, WO01 / 39234A2, WO01 / 41512A1, WO02 / 02714A2, WO02 / 15645A1, WO02 / 44189A1, WO05 / 19373A2, JP-A No. 2001-247859, JP-A No. 2002-302671, JP-A No. 2002-117978, JP-A No. 2003-133074, JP-A No. 2002-233502, JP-A No. 2003-123982, JP-A No. 2002-170684, EP No. 121157, JP-A No. 2002-2002 226495, JP 2002-234894, JP 2001-247859, JP 2001-298470, JP 2002-1736 4, JP 2002-203678, JP 2002-203679, JP 2004-357799, JP 2006-256999, JP 2007-19462, JP 2007-84635, JP 2007-96259, etc. Examples include phosphorescent light emitting compounds. Among them, Ir complex, Pt complex, Cu complex, Re complex, W complex, Rh complex, Ru complex, Pd complex, Os complex, Eu complex, Tb complex, Gd complex, Dy complex, and Ce complex are preferable, and Ir complex, Pt More preferred are complexes and Re complexes. Among these, Ir complexes, Pt complexes, and Re complexes containing at least one coordination mode of metal-carbon bond, metal-nitrogen bond, metal-oxygen bond, and metal-sulfur bond are more preferable. Furthermore, from the viewpoints of luminous efficiency, driving durability, chromaticity, etc., an Ir complex, a Pt complex, and a Re complex containing a tridentate or higher multidentate ligand are particularly preferable.

  As the fluorescent emitting dopant, generally, benzoxazole, benzimidazole, benzothiazole, styrylbenzene, polyphenyl, diphenylbutadiene, tetraphenylbutadiene, naphthalimide, coumarin, pyran, perinone, oxadiazole, aldazine, pyralidine, Cyclopentadiene, bisstyrylanthracene, quinacridone, pyrrolopyridine, thiadiazolopyridine, cyclopentadiene, styrylamine, aromatic dimethylidin compounds, condensed polycyclic aromatic compounds (such as anthracene, phenanthroline, pyrene, perylene, rubrene, or pentacene), Various metal complexes represented by 8-quinolinol metal complexes, pyromethene complexes and rare earth complexes, polythiophene, polyphenylene, polyphenylene vinyl Polymeric compounds such as emission, organic silanes, and the like derivatives thereof.

  Examples of the luminescent dopant include the following, but are not limited thereto.

  The light-emitting dopant in the light-emitting layer is contained in an amount of 0.1% by mass to 50% by mass with respect to the total compound mass generally forming the light-emitting layer in the light-emitting layer. To 1 mass% to 50 mass%, and more preferably 2 mass% to 40 mass%.

  The thickness of the light emitting layer is not particularly limited, but is usually preferably 2 nm to 500 nm, and more preferably 3 nm to 200 nm, and more preferably 5 nm to 100 nm, from the viewpoint of external quantum efficiency. Is more preferable.

  As the host material, a hole-transporting host material having excellent hole-transporting property (may be described as a hole-transporting host) and an electron-transporting host compound having excellent electron-transporting property (described as an electron-transporting host) May be used).

Examples of the hole transporting host in the light emitting layer include the following materials.
Pyrrole, indole, carbazole, azaindole, azacarbazole, triazole, oxazole, oxadiazole, pyrazole, imidazole, thiophene, polyarylalkane, pyrazoline, pyrazolone, phenylenediamine, arylamine, amino-substituted chalcone, styrylanthracene, fluorenone, hydrazone , Stilbene, silazane, aromatic tertiary amine compound, styrylamine compound, aromatic dimethylidin compound, porphyrin compound, polysilane compound, poly (N-vinylcarbazole), aniline copolymer, thiophene oligomer, polythiophene, etc. Conductive polymer oligomers, organic silanes, carbon films, and derivatives thereof.
Indole derivatives, carbazole derivatives, aromatic tertiary amine compounds, and thiophene derivatives are preferable, those having a carbazole group in the molecule are more preferable, and compounds having a t-butyl-substituted carbazole group are particularly preferable.

  The electron transport host in the light emitting layer preferably has an electron affinity Ea of 2.5 eV or more and 3.5 eV or less from the viewpoint of improving durability and lowering driving voltage, and is 2.6 eV or more and 3.4 eV or less. More preferably, it is 2.8 eV or more and 3.3 eV or less. Further, from the viewpoint of improving durability and reducing driving voltage, the ionization potential Ip is preferably 5.7 eV or more and 7.5 eV or less, more preferably 5.8 eV or more and 7.0 eV or less, and 5.9 eV or more. More preferably, it is 6.5 eV or less.

Examples of such an electron transporting host include the following materials.
Pyridine, pyrimidine, triazine, imidazole, pyrazole, triazole, oxazole, oxadiazole, fluorenone, anthraquinodimethane, anthrone, diphenylquinone, thiopyran dioxide, carbodiimide, fluorenylidenemethane, distyrylpyrazine, fluorine-substituted aromatic Compounds, heterocyclic tetracarboxylic anhydrides such as naphthaleneperylene, phthalocyanines, and derivatives thereof (may form condensed rings with other rings), metal complexes of 8-quinolinol derivatives, metal phthalocyanines, benzoxazoles And various metal complexes represented by metal complexes having benzothiazole as a ligand.

As the electron transporting host, metal complexes, azole derivatives (benzimidazole derivatives, imidazopyridine derivatives, etc.) and azine derivatives (pyridine derivatives, pyrimidine derivatives, triazine derivatives, etc.) are preferable. Is more preferable. The metal complex compound is more preferably a metal complex having a ligand having at least one of a nitrogen atom, an oxygen atom and a sulfur atom coordinated to the metal.
The metal ion in the metal complex is not particularly limited and can be appropriately selected depending on the purpose, but beryllium ion, magnesium ion, aluminum ion, gallium ion, zinc ion, indium ion, tin ion, platinum ion, or Palladium ions are preferable, beryllium ions, aluminum ions, gallium ions, zinc ions, platinum ions, or palladium ions are more preferable, and aluminum ions, zinc ions, or palladium ions are particularly preferable.

  There are various known ligands contained in the metal complex. For example, “Photochemistry and Photophysics of Coordination Compounds”, Springer-Verlag, H.C. Examples include the ligands described in Yersin, published in 1987, “Organometallic Chemistry: Fundamentals and Applications”, Sakai Hanafusa, Yamamoto Akio, published in 1982, and the like.

As said ligand, a nitrogen-containing heterocyclic ligand (C1-C30 is preferable, C2-C20 is more preferable, C3-C15 is especially preferable). Further, the ligand may be a monodentate ligand or a bidentate or more ligand, but is preferably a bidentate or more and a hexadentate or less ligand. Also preferred are bidentate to hexadentate ligands and monodentate mixed ligands.
Examples of the ligand include an azine ligand (for example, a pyridine ligand, a bipyridyl ligand, a terpyridine ligand, etc.), a hydroxyphenylazole ligand (for example, hydroxyphenylbenzimidazole). Ligands, hydroxyphenylbenzoxazole ligands, hydroxyphenylimidazole ligands, hydroxyphenylimidazopyridine ligands, etc.), alkoxy ligands (eg, methoxy, ethoxy, butoxy, 2-ethylhexyl). Siloxy etc. are mentioned, C1-C30 is preferable, C1-C20 is more preferable, C1-C10 is especially preferable.), An aryloxy ligand (for example, phenyloxy, 1-naphthyloxy, 2-naphthyloxy, 2,4,6-trimethylphenyloxy, 4- Such as phenyloxy and the like, 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms) and the like.

  Heteroaryloxy ligands (for example, pyridyloxy, pyrazyloxy, pyrimidyloxy, quinolyloxy, etc. are mentioned, preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and particularly preferably 1 to 12 carbon atoms). Alkylthio ligands (for example, methylthio, ethylthio and the like are mentioned, preferably having 1 to 30 carbon atoms, more preferably having 1 to 20 carbon atoms, and particularly preferably having 1 to 12 carbon atoms), arylthio ligands (for example, Phenylthio etc. are mentioned, C6-C30 is preferable, C6-C20 is more preferable, C6-C12 is especially preferable,) heteroarylthio ligand (for example, pyridylthio, 2-benzimidazole). Ruthio, 2-benzoxazolylthio, 2-benzthiazolylthio and the like, and those having 1 to 30 carbon atoms More preferably, carbon number 1-20 is more preferable, and carbon number 1-12 is particularly preferable.), Siloxy ligand (for example, triphenylsiloxy group, triethoxysiloxy group, triisopropylsiloxy group, etc.) Numbers 1 to 30 are preferred, carbon numbers 3 to 25 are more preferred, and carbon numbers 6 to 20 are particularly preferred.), Aromatic hydrocarbon anion ligands (for example, phenyl anion, naphthyl anion, anthranyl anion, etc.) 6 to 30 carbon atoms, more preferably 6 to 25 carbon atoms, and particularly preferably 6 to 20 carbon atoms), an aromatic heterocyclic anion ligand (for example, a pyrrole anion, a pyrazole anion, a pyrazole anion, Triazole anion, oxazole anion, benzoxazole anion, thiazole anion , A benzothiazole anion, a thiophene anion, a benzothiophene anion, etc., preferably having 1 to 30 carbon atoms, more preferably 2 to 25 carbon atoms, and particularly preferably 2 to 20 carbon atoms.), An indolenine anion arrangement Preferred examples include nitrogen-containing heterocyclic ligands, aryloxy ligands, heteroaryloxy groups, and siloxy ligands, nitrogen-containing heterocyclic ligands, aryloxy ligands, and siloxy coordination. More preferred are a child, an aromatic hydrocarbon anion ligand, and an aromatic heterocyclic anion ligand.

  Examples of the metal complex electron transporting host include, for example, JP-A-2002-2335076, JP-A-2004-214179, JP-A-2004-221106, JP-A-2004-221105, JP-A-2004-221068, JP-A-2004-327313, etc. And the compounds described.

  In the light emitting layer, the triplet lowest excitation level (T1) of the host material is preferably higher than T1 of the phosphorescent light emitting material in terms of color purity, light emission efficiency, and driving durability.

  In addition, the content of the host compound is not particularly limited, but may be 15% by mass or more and 95% by mass or less with respect to the total compound mass forming the light emitting layer from the viewpoint of luminous efficiency and driving voltage. preferable.

<<<<< Hole Injection Layer, Hole Transport Layer >>>>
The hole injection layer and the hole transport layer are layers having a function of receiving holes from the anode or the anode side and transporting them to the cathode side. The hole injection material and the hole transport material used for these layers may be a low molecular compound or a high molecular compound.
Specifically, pyrrole derivatives, carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styryl Anthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidin compounds, phthalocyanine compounds, porphyrin compounds, thiophene derivatives, organosilane derivatives, carbon, And the like.

  An electron-accepting dopant can be contained in the hole injection layer or the hole transport layer of the organic EL element. As the electron-accepting dopant introduced into the hole-injecting layer or the hole-transporting layer, an inorganic compound or an organic compound can be used as long as it has an electron-accepting property and oxidizes an organic compound.

  Specifically, examples of the inorganic compound include metal halides such as ferric chloride, aluminum chloride, gallium chloride, indium chloride, and antimony pentachloride, and metal oxides such as vanadium pentoxide and molybdenum trioxide.

In the case of an organic compound, a compound having a nitro group, halogen, cyano group, trifluoromethyl group or the like as a substituent, a quinone compound, an acid anhydride compound, fullerene, or the like can be preferably used.
In addition, JP-A-6-212153, JP-A-11-111463, JP-A-11-251067, JP-A-2000-196140, JP-A-2000-286054, JP-A-2000-315580, JP-A-2001-102175, JP-A-2001-2001. -160493, JP2002-252085, JP2002-56985, JP2003-157981, JP2003-217862, JP2003-229278, JP2004-342614, JP2005-72012, JP20051666667 The compounds described in JP-A-2005-209643 and the like can be preferably used.

  Among these, hexacyanobutadiene, hexacyanobenzene, tetracyanoethylene, tetracyanoquinodimethane, tetrafluorotetracyanoquinodimethane, p-fluoranyl, p-chloranil, p-bromanyl, p-benzoquinone, 2,6-dichlorobenzoquinone, 2 , 5-dichlorobenzoquinone, 1,2,4,5-tetracyanobenzene, 1,4-dicyanotetrafluorobenzene, 2,3-dichloro-5,6-dicyanobenzoquinone, p-dinitrobenzene, m-dinitrobenzene, o-dinitrobenzene, 1,4-naphthoquinone, 2,3-dichloronaphthoquinone, 1,3-dinitronaphthalene, 1,5-dinitronaphthalene, 9,10-anthraquinone, 1,3,6,8-tetranitrocarbazole, 2,4,7-trinitro-9- Luenone, 2,3,5,6-tetracyanopyridine, or fullerene C60 is preferred, and hexacyanobutadiene, hexacyanobenzene, tetracyanoethylene, tetracyanoquinodimethane, tetrafluorotetracyanoquinodimethane, p-fluoranyl, p- Chloranil, p-bromanyl, 2,6-dichlorobenzoquinone, 2,5-dichlorobenzoquinone, 2,3-dichloronaphthoquinone, 1,2,4,5-tetracyanobenzene, 2,3-dichloro-5,6-dicyano Benzoquinone or 2,3,5,6-tetracyanopyridine is more preferred, and tetrafluorotetracyanoquinodimethane is particularly preferred.

These electron-accepting dopants may be used alone or in combination of two or more.
Although the usage-amount of an electron-accepting dopant changes with kinds of material, it is preferable that it is 0.01 mass%-50 mass% with respect to hole transport layer material, and it is 0.05 mass%-20 mass%. More preferably, it is especially preferable that it is 0.1 mass%-10 mass%.

The thicknesses of the hole injection layer and the hole transport layer are each preferably 500 nm or less from the viewpoint of lowering the driving voltage.
The thickness of the hole transport layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, and even more preferably 10 nm to 100 nm. In addition, the thickness of the hole injection layer is preferably 0.1 nm to 200 nm, more preferably 0.5 nm to 100 nm, and further preferably 1 nm to 100 nm.
The hole injection layer and the hole transport layer may have a single-layer structure composed of one or more of the materials described above, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions. .

<<<<< Electron Injection Layer, Electron Transport Layer >>>>
The electron injection layer and the electron transport layer are layers having a function of receiving electrons from the cathode or the cathode side and transporting them to the anode side. The electron injection material and the electron transport material used for these layers may be a low molecular compound or a high molecular compound.
Specifically, pyridine derivatives, quinoline derivatives, pyrimidine derivatives, pyrazine derivatives, phthalazine derivatives, phenanthroline derivatives, triazine derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, fluorenone derivatives, anthraquinodimethane derivatives, anthrone Derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimide derivatives, fluorenylidenemethane derivatives, distyrylpyrazine derivatives, naphthalene, perylene and other aromatic ring tetracarboxylic acid anhydrides, phthalocyanine derivatives, 8-quinolinol derivative metal complexes, Metal phthalocyanines, various metal complexes represented by metal complexes with benzoxazole and benzothiazole as ligands, organosilane derivatives represented by siloles Body, or the like is preferably a layer containing.

The electron injection layer or the electron transport layer of the organic EL element may contain an electron donating dopant. The electron donating dopant introduced into the electron injecting layer or the electron transporting layer only needs to have an electron donating property and a property of reducing an organic compound, such as an alkali metal such as Li or an alkaline earth metal such as Mg. Transition metals including rare earth metals and reducing organic compounds are preferably used. As the metal, a metal having a work function of 4.2 eV or less can be preferably used. Specifically, Li, Na, K, Be, Mg, Ca, Sr, Ba, Y, Cs, La, Sm, Gd , And Yb. Examples of the reducing organic compound include nitrogen-containing compounds, sulfur-containing compounds, and phosphorus-containing compounds.
In addition, materials described in JP-A-6-212153, JP-A-2000-196140, JP-A-2003-68468, JP-A-2003-229278, JP-A-2004-342614, and the like can be used.

  These electron donating dopants may be used alone or in combination of two or more. The amount of the electron donating dopant varies depending on the type of material, but is preferably 0.1% by mass to 99% by mass, and 1.0% by mass to 80% by mass with respect to the electron transport layer material. Is more preferable, and 2.0 mass% to 70 mass% is particularly preferable.

The thicknesses of the electron injection layer and the electron transport layer are each preferably 500 nm or less from the viewpoint of lowering the driving voltage.
The thickness of the electron transport layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, and particularly preferably 10 nm to 100 nm. Further, the thickness of the electron injection layer is preferably 0.1 nm to 200 nm, more preferably 0.2 nm to 100 nm, and particularly preferably 0.5 nm to 50 nm.
The electron injection layer and the electron transport layer may have a single layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.

<<<<< hole blocking layer >>>>
The hole blocking layer is a layer having a function of preventing holes transported from the anode side to the light emitting layer from passing through to the cathode side. As the organic compound layer adjacent to the light emitting layer on the cathode side, a hole blocking layer can be provided.
Examples of the compound constituting the hole blocking layer include aluminum complexes such as BAlq, triazole derivatives, phenanthroline derivatives such as BCP, and the like.
The thickness of the hole blocking layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, and particularly preferably 10 nm to 100 nm.
The hole blocking layer may have a single layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.

<<<<< Electron Block Layer >>>>
The electron blocking layer is a layer having a function of preventing electrons transported from the cathode side to the light emitting layer from passing through to the anode side. In the present invention, an electron blocking layer can be provided as the organic compound layer adjacent to the light emitting layer on the anode side.
As examples of the compound constituting the electron blocking layer, for example, those mentioned as the hole transport material described above can be applied.
The thickness of the electron blocking layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, and particularly preferably 10 nm to 100 nm.
The hole blocking layer may have a single layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.

<<< Protective layer >>>
The entire organic EL element may be protected by a protective layer.
As a material contained in the protective layer, any material may be used as long as it has a function of preventing materials that promote device deterioration such as moisture and oxygen from entering the device.
As specific examples, In, Sn, Pb, Al , a metal such as _{Ti, MgO, SiO, SiO 2,} Al 2 O 3, GeO, NiO, CaO, BaO, Fe 2 O 3, Y 2 O 3, TiO Metal oxides such as ₂ ; metal nitrides such as SiN _x and SiN _x O _y ; metal fluorides such as MgF ₂ , LiF, AlF ₃ and CaF ₂ ; polyethylene, polypropylene, polymethyl methacrylate, polyimide, polyurea, polytetra Copolymers obtained by copolymerizing fluoroethylene, polychlorotrifluoroethylene, polydichlorodifluoroethylene, a copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene, and a monomer mixture containing tetrafluoroethylene and at least one comonomer. Polymer, fluorine-containing copolymer having a cyclic structure in the main chain Examples thereof include a water-absorbing substance having a water absorption of 1% or more, a moisture-proof substance having a water absorption of 0.1% or less, and the like. When a protective layer is used in the top emission configuration, the protective layer is patterned so that the low melting point metal layer of the sealing member and the metal formed on the insulating member are connected.
Moreover, it is necessary to pattern the metal which forms a low melting-point metal layer and a metal interlayer compound on a protective layer.

  There is no restriction | limiting in particular about the formation method of a protective layer, According to the objective, it can select suitably, For example, a vacuum evaporation method, sputtering method, reactive sputtering method, MBE (molecular beam epitaxy) method, cluster ion beam method , Ion plating method, plasma polymerization method (high frequency excitation ion plating method), plasma CVD method, laser CVD method, thermal CVD method, gas source CVD method, coating method, printing method, transfer method and the like.

<< Insulation member >>
The insulating member is disposed on the surface of the substrate.
The arrangement of the insulating member is not particularly limited as long as it is arranged at least on the outer peripheral portion of the organic EL element region, and can be appropriately selected according to the purpose, but is further arranged inside the organic EL element region. It is preferable that the organic EL element is disposed in a portion adjacent to each organic EL element. If the insulating member is further disposed inside the organic EL element region, it is advantageous in that it is sealed for each of the plurality of organic EL elements, and the sealing performance can be improved. Further, it is advantageous that the insulating member is further disposed at a portion adjacent to each organic EL element, so that each organic EL element is sealed, and the sealing performance can be further improved.
FIG. 1 is a view for explaining an embodiment in which an insulating member is disposed on the outer peripheral portion of the organic EL element region, and is a cross-sectional view parallel to the substrate surface. FIG. 2 is a view for explaining an embodiment in which the insulating member is further disposed inside the organic EL element region, and is a cross-sectional view parallel to the substrate surface. FIG. 3 is a view for explaining an embodiment in which an insulating member is further arranged in a portion adjacent to each organic EL element, and is a cross-sectional view parallel to the substrate surface.
1-3, the code | symbol 1 represents a board | substrate, the code | symbol 2 represents the junction part of an insulating member and a sealing board, and the code | symbol 3 represents an organic EL element.

Moreover, the insulating member arrange | positioned at the outer peripheral part of the said organic EL element area | region may be adjacent to the organic EL element, and does not need to be adjacent. The insulating member that is disposed on the outer periphery of the organic EL element region and is not adjacent to the organic EL element enhances adhesion between the sealing plate, the organic EL element, and the substrate on which the insulating member is disposed on the surface. It is preferable that the organic EL element is disposed in view of the sealing performance of the organic EL element.
5A to 5B are diagrams illustrating an embodiment of the arrangement of the insulating members.
5A to 5B, reference numeral 1 represents a substrate, reference numeral 41 represents a sealing member, reference numeral 42 represents a low melting point metal layer, reference numeral 43 represents a metal layer, reference numeral 44 represents an insulating member, reference numeral Reference numeral 51 denotes a cathode, reference numeral 52 denotes an anode, reference numeral 53 denotes an organic compound layer, and a dotted box indicates an insulating member not adjacent to the organic EL element.

There is no restriction | limiting in particular as a material of the said insulating member, According to the objective, it can select suitably, For example, acrylic resin, imide resin, novolak resin etc. are mentioned.
There is no restriction | limiting in particular as a formation method of the said insulating member, According to the objective, it can select suitably, For example, a photolitho, the printing method, nanoimprint etc. are mentioned.
There is no restriction | limiting in particular as the height of the said insulating member, Although it can select suitably according to the objective, 1 micrometer-10 micrometers are preferable, and 1 micrometer-3 micrometers are more preferable.
The insulating member is preferably disposed between the pixels, and it is more preferable that the insulating member is formed so as to cover the edge of the pixel electrode because a short circuit caused by the edge can be prevented.

  The insulating member has a metal layer on at least the surface opposite to the substrate, and further includes other layers such as a layer made of the same component as one electrode of the organic electroluminescent element, if necessary. Become.

<<< Metal layer >>>
The metal layer includes at least a metal that forms a metal interlayer compound with a metal contained in the low melting point metal layer of the sealing plate, and further includes other components as necessary.
By having the metal layer, it is possible to improve the adhesion when bonded to the low melting point metal layer. For example, when the insulating material has an Al layer as a layer made of the same component as that of one electrode of the organic electroluminescent element described later, the adhesion can be particularly improved.
The metal contained in the metal layer is not particularly limited as long as it forms a metal intercalation compound with the metal contained in the low melting point metal layer, and can be appropriately selected according to the purpose. For example, Au , Ag, Cu, Pd, Ni, Pt, Fe and the like. Among these, Au and Cu are preferable because they can easily form a metal interlayer compound with Sn used for the low melting point metal layer.

  There is no restriction | limiting in particular as a formation method of the said metal layer, According to the objective, it can select suitably, For example, a vapor deposition method, a sputtering method, the apply | coating method etc. are mentioned.

The formation position of the metal layer is not particularly limited as long as it is formed on at least the surface opposite to the substrate, and can be appropriately selected according to the purpose. It may be formed or may be formed in a part thereof.
In the case of the bottom emission method, the metal layer may be formed on a surface opposite to the substrate of the organic EL element.

There is no restriction | limiting in particular as thickness of the said metal layer, Although it can select suitably according to the objective, 10 nm-2 micrometers are preferable, 10 nm-500 nm are more preferable, 100 nm-200 nm are especially preferable.
When the thickness of the metal layer is less than 10 nm, adhesion failure may occur. When the thickness exceeds 2 μm, the metal interlayer compound is mechanically brittle and may cause adhesion failure. On the other hand, when the thickness of the metal layer is within the particularly preferable range, it is advantageous in that the adhesion is improved.

<<< Layer made of the same component as one electrode of the organic electroluminescent element >>>
When the insulating member has a layer made of the same component as one electrode of the organic electroluminescent element, the insulating member has the same component as the one electrode of the organic electroluminescent element on the surface opposite to the substrate. And the metal layer are laminated in this order.
The layer made of the same component as the one electrode of the organic electroluminescent element can be used as an auxiliary wiring in the case of the top emission method, and has a heat dissipation action in the case of the bottom emission method.

  There are no particular limitations on the material, formation method, thickness, and the like of the layer composed of the same components as the one electrode of the organic electroluminescent element, and it can be appropriately selected according to the purpose. The same can be said.

There is no restriction | limiting in particular as a shape of the said insulating member, Although it can select suitably according to the objective, A taper shape is preferable at the point which can improve adhesiveness with the said sealing member.
4A to 4B are views for specifically explaining an embodiment of a preferable shape of the insulating member, and are views showing the insulating member in the AA ′ cross section in FIG. 3. FIG. 4A is a diagram illustrating a state before the metal layer of the insulating member and the low melting point metal layer of the sealing member are joined, and FIG. 4B is a diagram illustrating the metal layer of the insulating member and the sealing member. It is a figure explaining the state after joining the low melting metal layer of a member.
The insulating member 44 has a cathode 51 and a metal layer 43 in this order on the surface, and is disposed on the substrate 1. Then, a metal interlayer compound 45 is formed and bonded between the metal layer 43 of the insulating member 44 and the low melting point metal layer 42 of the sealing member 41.
4A to 4B, the angles of both ends of the upper side when the substrate side of the insulating member is the lower side and the sealing plate side is the upper side are not particularly limited and can be appropriately selected according to the purpose. 5 ° to 60 ° is preferable, 5 ° to 45 ° is more preferable, and 10 ° to 20 ° is particularly preferable.
If the angle of both ends of the upper side is less than 5 °, a pattern defect of the insulating member may occur, and if it exceeds 60 °, the adhesion may decrease. On the other hand, when the angles of both ends of the upper side are within the particularly preferable range, it is advantageous in that the adhesion between the substrate and the sealing plate is enhanced and the sealing performance of the organic EL element is excellent.

<< Other parts >>
Other members disposed on the substrate are not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include auxiliary electrode wiring, diffraction necessary for light extraction, fine particles, and lenses.

<Sealing member>
The sealing member has a low melting point metal layer at least in a portion corresponding to the insulating member, and further includes other layers as necessary.
There is no restriction | limiting in particular as said sealing member, There is no restriction | limiting in particular, According to the objective, it can select suitably, The thing similar to the board | substrate mentioned above can be used.

<< Low melting point metal layer >>
The low melting point metal layer contains at least a low melting point metal, and further contains other components as required.
The low melting point metal means a metal having a melting point of 250 ° C. or lower.
There is no restriction | limiting in particular as said low melting-point metal, According to the objective, it can select suitably, For example, In (melting | fusing point 157 degreeC), Sn (melting | fusing point 232 degreeC), Pb, or these alloys etc. are mentioned. Among these, those excluding Pb are advantageous in terms of environment.

  There is no restriction | limiting in particular as a formation method of the said low melting metal layer, According to the objective, it can select suitably, For example, vapor deposition, sputtering, etc. are mentioned.

The formation position of the low melting point metal layer is not particularly limited as long as it is formed at least in a portion corresponding to the insulating member, and can be appropriately selected according to the purpose. For example, one of the sealing members It may be formed on the entire surface.
For example, in the case of the bottom emission method, an aspect having a low melting point metal layer on the entire one surface of the sealing member may be used. In the case of the top emission method, a low melting point other than the portion corresponding to the organic EL element. An embodiment having a metal layer is preferable.

There is no restriction | limiting in particular as thickness of the said low melting metal layer, Although it can select suitably according to the objective, 40 nm-10 micrometers are preferable, 40 nm-5 micrometers are more preferable, 100 nm-1 micrometer are especially preferable.
If the thickness of the low-melting-point metal layer is less than 40 nm, poor adhesion may occur. If the thickness exceeds 10 μm, sealing unevenness may occur depending on the sealing conditions, or the metal interlayer compound may become too thick and brittle. There is. On the other hand, when the thickness of the low-melting-point metal layer is within the particularly preferable range, it is advantageous in that adhesion failure and sealing unevenness hardly occur.

<< Other layers >>
There is no restriction | limiting in particular as another layer of the said sealing member, According to the objective, it can select suitably, For example, a color filter, a black matrix, etc. are mentioned.

<Sealing>
The organic EL element is sealed by bonding the metal layer of the insulating member and the low melting point metal layer of the sealing member.
There is no restriction | limiting in particular as said joining means, According to the objective, it can select suitably, For example, a laser, a heat | fever etc. are mentioned. Among these, a laser is preferable in that only the portion irradiated with the laser is heated and damage to the organic EL element is small.
Examples of the laser include a semiconductor laser, a carbon dioxide gas laser, and a YAG laser.
There is no restriction | limiting in particular as a wavelength of the said laser beam, Although it can select suitably according to the objective, For example, when using glass as said sealing member, 300 nm or more is preferable. In addition, when gold is used as the material of the light absorption layer described later, the wavelength of the laser light is preferably 300 nm to 500 nm, and when copper is used, the wavelength of the laser light is preferably 300 nm to 600 nm. .
The irradiation condition of the laser light is not particularly limited as long as the metal intercalation compound can be formed, and can be appropriately selected according to the purpose. For example, when using Cu, a GaN diode laser of 400 nm to 410 nm Can be formed at 1 W and 2 mm / s to form a metal intercalation compound.
Examples of the heat include a vacuum laminator and a laminator.
The conditions for joining by heat are not particularly limited as long as the metal interlayer compound can be formed, and can be appropriately selected according to the purpose. For example, by laminating at 250 ° C. for 1 minute. Metal intercalation compounds can be formed. Further, at the time of sealing, it is preferable that the substrate of the insulating member and the substrate of the sealing member are bonded together in a vacuum or in an inert gas such as nitrogen or argon.

When the laser is used, a light absorption layer may be provided between the surface of the sealing member and the low melting point metal layer. There is no restriction | limiting in particular as a material of the said light absorption layer, Although it can select suitably according to the objective, Cu, Au, etc. are preferable. The preferable material is advantageous in that it has good adhesion to the sealing member and the low melting point metal layer and has a sufficiently larger absorption than the sealing member at the wavelength of the irradiated laser beam.
There is no restriction | limiting in particular as thickness of the said light absorption layer, According to the objective, it can select suitably, For example, 200 nm etc. are mentioned.
Further, when Cu or Au is used for the light absorption layer, for example, chromium may be used as a base material in order to reinforce adhesion with the sealing member.
There is no restriction | limiting in particular as thickness of the said base material, According to the objective, it can select suitably, For example, 20 nm etc. are mentioned.

  Sealing by the sealing method eliminates the need for a conventionally used sealing adhesive and suppresses yield reduction due to poor adhesion.

<< Drive >>
The organic EL element can obtain light emission by applying a direct current (which may include an alternating current component if necessary) voltage (usually 2 to 15 volts) or a direct current between the anode and the cathode. .
As for the driving method of the organic EL element, JP-A-2-148687, JP-A-6-301355, JP-A-5-29080, JP-A-7-134558, JP-A-8-234658, and JP-A-8-214447, patents The driving methods described in Japanese Patent No. 2784615, US Pat. Nos. 5,828,429 and 6023308, and the like can be applied.

  The organic EL element can further improve the light extraction efficiency by various known devices. For example, by processing the substrate surface shape (for example, forming a fine concavo-convex pattern), controlling the refractive index of the substrate / ITO layer / organic layer, controlling the film thickness of the substrate / ITO layer / organic layer, etc. It is possible to further improve the light extraction efficiency and further improve the external quantum efficiency.

  The organic EL element may be a top emission type.

In order to further improve the light emission efficiency, the organic EL element can have a structure in which a charge generation layer is provided between a plurality of light emitting layers.
The charge generation layer is a layer having a function of generating charges (holes and electrons) when an electric field is applied and a function of injecting the generated charges into a layer adjacent to the charge generation layer.

The material for forming the charge generation layer is not particularly limited as long as the material has the above-described function, and may be formed of a single compound or a plurality of compounds.
Specifically, it may be a conductive material, a semiconductive material such as a doped organic layer, or an electrically insulating material. 11-329748, Unexamined-Japanese-Patent No. 2003-272860, and the material of Unexamined-Japanese-Patent No. 2004-39617 are mentioned.
More specifically, transparent conductive materials such as ITO and IZO (indium zinc oxide), fullerenes such as C60, conductive organic materials such as oligothiophene, metal phthalocyanines, metal-free phthalocyanines, metal porphyrins, Conductive organic materials such as metal porphyrins, metal materials such as Ca, Ag, Al, Mg: Ag alloy, Al: Li alloy, Mg: Li alloy, hole conductive materials, electron conductive materials, and mixtures thereof Can be mentioned.
The hole conductive material is, for example, a material obtained by doping a hole transporting organic material such as 2-TNATA or NPD with an oxidant having an electron withdrawing property such as F4-TCNQ, TCNQ, or FeCl _3. Examples thereof include conductive polymers, P-type semiconductors, etc. The electron conductive material is an electron transporting organic material doped with a metal or metal compound having a work function of less than 4.0 eV, an N-type conductive polymer, An N-type semiconductor is mentioned. Examples of the N-type semiconductor include N-type Si, N-type CdS, and N-type ZnS. Examples of the P-type semiconductor include P-type Si, P-type CdTe, and P-type CuO.
Further, an electrically insulating material such as V ₂ O ₅ can be used for the charge generation layer.

  The charge generation layer may be a single layer or a stack of a plurality of layers. As a structure in which a plurality of layers are stacked, a conductive material such as a transparent conductive material or a metal material and a hole conductive material, or a structure in which an electron conductive material is stacked, the above hole conductive material and electron conductive And a layer having a structure in which a functional material is laminated.

In general, it is preferable to select a film thickness and a material for the charge generation layer so that the visible light transmittance is 50% or more. The film thickness is not particularly limited and can be appropriately selected according to the purpose, but is preferably 0.5 nm to 200 nm, more preferably 1 nm to 100 nm, still more preferably 3 nm to 50 nm, and particularly preferably 5 nm to 30 nm. .
The method for forming the charge generation layer is not particularly limited, and the above-described method for forming the organic compound layer can be used.

The charge generation layer is formed between the two or more light emitting layers, and the anode side and the cathode side of the charge generation layer may include a material having a function of injecting charges into adjacent layers. In order to improve the electron injection property to the layer adjacent to the anode side, for example, an electron injection compound such as BaO, SrO, Li ₂ O, LiCl, LiF, MgF ₂ , MgO, and CaF _{2 is} added to the anode side of the charge generation layer. May be laminated.
In addition to the contents mentioned above, the material for the charge generation layer should be selected based on the descriptions in JP-A-2003-45676, US Pat. Nos. 6,337,492, 6,107,734, 6,872,472, and the like. Can do.

The organic EL element may have a resonator structure. For example, a multilayer mirror made of a plurality of laminated films having different refractive indexes, a transparent or translucent electrode, a light emitting layer, and a metal electrode are superimposed on a transparent substrate. The light generated in the light emitting layer resonates repeatedly with the multilayer mirror and the metal electrode as a reflection plate.
In another preferred embodiment, a transparent or translucent electrode and a metal electrode each function as a reflecting plate on a transparent substrate, and light generated in the light emitting layer repeats reflection and resonates between them.
In order to form a resonant structure, the optical path length determined from the effective refractive index of the two reflectors and the refractive index and thickness of each layer between the reflectors is adjusted to the optimum value to obtain the desired resonant wavelength. Is done. The calculation formula in the case of the first aspect is described in JP-A-9-180883. The calculation formula in the case of the second aspect is described in Japanese Patent Application Laid-Open No. 2004-127795.

<Other members>
There is no restriction | limiting in particular as said other member, According to the objective, it can select suitably, For example, a color filter, a black matrix, a polarizing plate etc. are mentioned.

<Bottom emission type organic EL display>
For example, as shown in FIG. 6A, the bottom emission type organic EL display device includes a glass substrate 61 (refractive index: about 1.5) and a transparent electrode (anode) formed on the glass substrate 61 and made of ITO or the like. ) 67 (refractive index: about 1.9), an organic compound layer 68 (refractive index: about 1.8) disposed on the transparent electrode (anode) 67 and including a light emitting layer, and the like on the organic compound layer 68 A low-melting point metal disposed on the glass substrate 61 and adjacent to the transparent electrode (anode) 67, the organic compound layer 68, and the cathode 70. An insulating member 62 made of an acrylic resin or the like having a metal layer 63 containing a metal that forms a metal interlayer compound with a metal contained in the layer, a transparent electrode (anode) 67, an organic compound layer 68, and a reflective electrode (cathode) 7 The sealed, and a sealing member (glass) 71 having a low melting point metal layer 72 on the surface. The sealed region 64 sealed by bonding the metal layer and the low melting point metal layer is filled with dry nitrogen.
The transparent electrode (anode) 67 is connected to a transistor (TFT) (not shown).
In addition, as shown in FIG. 6B, a metal layer 63 may be provided on the surface of the cathode 70 on the organic compound layer 68. Further, the insulating member 62 may have a mode in which the cathode 70 and the metal layer 63 are provided on the surface thereof in this order.

<Top emission type organic EL display device>
For example, as shown in FIG. 7, the top emission type organic EL display device is arranged on a glass substrate 61 (refractive index: about 1.5) and a glass substrate 61, and is made of a metal such as aluminum or silver. A reflective anode 75, an organic compound layer 68 (refractive index: about 1.8) disposed on the reflective anode 75 and including a light emitting layer, and the like, disposed on the organic compound layer 68, and made of Al, Ag, or the like. The counter electrode (semi-transmissive cathode) 76 and the glass substrate 61 are disposed adjacent to the reflective anode 75, the organic compound layer 68, and the counter electrode (semi-transmissive cathode) 76, and are included in the low melting point metal layer. The insulating member 62 made of an acrylic resin having a metal layer 63 containing a metal and a metal forming a metal interlayer compound on the surface, the reflective anode 75, the organic compound layer 68, and the counter electrode (semi-transmissive cathode) 76 are sealed. To, and a sealing member (glass) 71 having a low melting point metal layer 72 on the surface. The sealed region 64 sealed by bonding the metal layer and the low melting point metal layer is filled with dry nitrogen.
The reflective anode 75 is connected to a transistor (TFT).

As a method of making the organic EL display device of a full color type, for example, as described in “Monthly Display”, September 2000, pages 33 to 37, the three primary colors (blue (B), Three-color light emission method in which organic EL elements that emit light corresponding to green (G) and red (R) are arranged on a substrate, and white light emission by an organic EL element for white light emission is divided into three primary colors through a color filter. There are known a white method, a color conversion method for converting blue light emitted by an organic EL element for blue light emission into red (R) and green (G) through a fluorescent dye layer, and the like.
Moreover, the planar light source of a desired luminescent color can be obtained by using combining the organic EL element of the different luminescent color obtained by the said method. For example, a white light-emitting light source that combines blue and yellow light-emitting elements, a white light-emitting light source that combines blue, green, and red light-emitting elements.

Examples of the present invention will be described below, but the present invention is not limited to the following examples.

(Example 1: Production of organic EL display device 1)
First, as shown in FIG. 8A, a buffer layer 82 made of a silicon oxide film was formed to 100 nm on a glass substrate 81 by a CVD method.
Next, an amorphous silicon film having a thickness of 40 nm was formed on the buffer layer 82 by a CVD method, and this was crystallized by a laser annealing method to form polysilicon. Thereafter, the polysilicon film was patterned by photolithography and dry etching to form a channel layer 83. Next, a 100 nm silicon oxide film was formed by CVD on the buffer layer 82 in which the channel layer 83 was formed. Next, an AlNd film is formed to a thickness of 100 nm by sputtering, and a silicon oxide film and an AlNd film are patterned by photolithography and dry etching to form a gate insulating film 84 and a gate electrode 85 made of a silicon oxide film on the channel layer 83. did. Next, phosphorus ions were implanted by ion implantation using the gate electrode 85 as a mask, and a source region and a drain region were formed in the channel layers on both sides of the gate electrode 85 (FIG. 8B).
Next, after an interlayer insulating film 86 made of a silicon nitride film is formed to 100 nm on the insulating substrate 81 on which the thin film transistor is formed by a CVD method, a source region and a drain are formed on the interlayer insulating film 86 by photolithography and dry etching. Contact holes 87 and 88 reaching the region were formed, respectively (FIG. 8C).
Next, a Ti / Al / Ti multilayer structure conductive layer is formed on the interlayer insulating film 86 with contact holes formed by sputtering, and then patterned by photolithography and dry etching to form a source electrode made of Ti / Al / Ti. 89, a drain electrode 90 was formed. Next, a photosensitive resin was applied thereon by spin coating to form an interlayer insulating film 92. Then, after exposing the photosensitive resin using a mask, the exposed photosensitive resin is developed using a developer to form an opening contact hole 93 exposing a region on the source electrode 89 of the interlayer insulating film 92. . Next, an ITO film (lower electrode 91) having a thickness of 80 nm was formed by sputtering, and then the ITO film was patterned into a predetermined shape by photolithography and etching (FIG. 8D). Thus, an organic EL TFT substrate and a lower electrode were produced.
Thereafter, acrylic photosensitive resin (JSR 405G) is applied to the lower electrode by spin coating at 1 μm, and pre-annealed at 90 ° C. for 2 minutes, so that the insulating member 62 is formed on the outer periphery of the organic EL element region. Exposed to. After development, annealing was performed at 200 ° C. for 1 hour to obtain an insulating member (insulating layer) in which the angle of both ends of the upper side was 30 ° when the substrate side of the insulating member was the lower side and the sealing plate side was the upper side. .
Then, an organic compound layer (a hole injection layer, a hole transport layer, and a light emitting layer) covering the lower electrode 91 exposed at the bottom of the pixel opening was deposited by using a deposition mask. The organic compound layer includes, in order from the lower electrode 91 side, a 2-TNATA (4,4 ′, 4 ″ -tris (2-naphthylphenylamino) triphenylamine) film as a hole injection layer and a hole transport layer. An α-NPD (N, N′-dinaphthylphenylamino) pyrene) film and Alq3 (8-quinolinol aluminum complex) were stacked as a light emitting layer.
After the above, an upper electrode was formed. The upper electrode was formed by depositing an Al film with a thickness of 100 nm through a mask opened in a predetermined shape by a vacuum deposition method.
After that, using a predetermined mask, Pt was deposited to a thickness of 150 nm by a vapor deposition method only on the outer peripheral insulating layer 62 as a metal for forming the low melting point compound and the metal interlayer compound.
The sealing member was formed by depositing Sn as a low melting point metal on the surface of a glass substrate used as the sealing member by a vacuum deposition method.
The substrate obtained by placing the organic EL element and the insulating member on the surface and the sealing member obtained above are bonded together in a nitrogen atmosphere, and then a fiber pigtail type high-power semiconductor laser is used, and the laser wavelength is 808 nm. , 915 nm was used, and the rated output was sealed using a 6 W laser module.
Thus, an organic EL display device 1 in which an insulating member was formed so as to seal the entire organic EL element region shown in FIG. 1 was produced.

(Example 2: Production of organic EL display device 2)
In Example 1, the point where the insulating member 62 was formed on the outer peripheral portion of the organic EL element region was changed so that the entire organic EL element region was divided into four regions, and the insulating member 62 was formed for each of the four regions. Other than that, in the same manner as in Example 1, an organic EL display device 2 in which an insulating member was formed so as to be sealed for each of the plurality of organic EL elements shown in FIG.

(Example 3: Production of organic EL display device 3)
In Example 1, the point where the insulating member 62 was formed on the outer peripheral portion of the organic EL element region was changed to form the insulating member 62 in a portion adjacent to each organic EL element, and only on the insulating layer 62 on the outer peripheral portion. As a metal that forms a low-melting-point compound and a metal intercalation compound, a metal that forms a low-melting-point compound and a metal-intercalation compound on the outer peripheral insulating layer 62 and the organic EL element is the point that a Pt film having a thickness of 150 nm is formed by vapor deposition As in Example 1, except that Pt was changed to a film thickness of 150 nm by an evaporation method, an organic EL having an insulating member formed so as to seal each organic EL element shown in FIG. Display device 3 was produced.

(Example 4: Production of organic EL display device 4)
In Example 3, the insulating member 62 is formed in a portion adjacent to each organic EL element. Further, the insulating member is disposed on the outer periphery of the organic EL element region and is not adjacent to the organic EL element (reference numeral 44 in FIG. 5A). In the same manner as in Example 3, each organic EL element is sealed, and further, an organic EL in which an insulating member is formed so as to seal the entire organic EL element region. A display device 4 was produced.

(Example 5: Production of organic EL display device 5)
In Example 3, when the shape of the insulating member is such that the angle of both ends of the upper side when the substrate side of the insulating member is the lower side and the sealing plate side is the upper side is 30 °, the angle is changed to 20 °. Except that, an organic EL display device 5 in which an insulating member was formed so as to seal each organic EL element was produced in the same manner as in Example 3.
The angle was formed as follows.
A 1 μm novolak resist (OFPR800 manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied on the lower electrode by spin coating, and pre-baked at 90 ° C. for 30 minutes, so that an insulating member 62 is formed in a portion adjacent to each organic EL element. Exposed. After alkali development, baking is performed at 115 ° C. for 30 minutes to obtain an insulating member (insulating layer) in which the angle of both ends of the upper side is 20 ° when the substrate side of the insulating member is the lower side and the sealing plate side is the upper side. It was.

(Comparative Example 1: Production of organic EL display device 6)
In Example 1, the organic EL display device 6 was produced in the same manner as in Example 1 except that Pt was not formed as a metal for forming the low melting point compound and the metal interlayer compound on the insulating layer 62. .

(Comparative Example 2: Production of organic EL display device 7)
In Example 2, an organic EL display device 7 was produced in the same manner as in Example 2 except that Pt was not formed as a metal for forming the low melting point compound and the metal interlayer compound on the insulating layer 62. .

(Comparative Example 3: Production of organic EL display device 8)
In Example 3, an organic EL display device 8 was produced in the same manner as in Example 3 except that Pt was not formed as a metal for forming the low melting point compound and the metal interlayer compound on the insulating layer 62. .

(Comparative Example 4: Production of organic EL display device 9)
In Example 4, an organic EL display device 9 was produced in the same manner as in Example 4 except that Pt was not formed as a metal for forming the low melting point compound and the metal interlayer compound on the insulating layer 62. .

(Comparative Example 5: Production of organic EL display device 10)
In Example 5, the organic EL display device 10 was produced in the same manner as in Example 5 except that Pt was not formed as a metal for forming the low melting point compound and the metal interlayer compound on the insulating layer 62. .

<Adhesion evaluation>
About the adhesiveness of the board | substrate and sealing member of the organic electroluminescence display produced by Examples 1-5 and Comparative Examples 1-5, it evaluated as follows. The results are shown in Table 1.
As for the adhesion, when 20 organic EL display devices having 113 ppi pixels are produced on a 10 cm square substrate and dropped from a height of 1 m, the occurrence of cracks in the adhesive portion between the sealing member and the substrate is generated. Evaluated.
The evaluation criteria for the adhesion are as follows.
A: There are no cracks.
○: The occurrence of cracks is 1 or more and 2 or less.
Δ: The occurrence of cracks is 3 or more and less than 5.
X: 5 or more cracks were generated.

<Sealability evaluation>
The sealing properties of the organic EL display devices produced in Examples 1 to 5 and Comparative Examples 1 to 5 were evaluated as follows. The results are shown in Table 1.
Twenty organic EL display devices having 113 ppi pixels on a 10 cm square substrate were manufactured under high temperature and high humidity conditions of 80 ° C. and 90% humidity, and the sealing performance was evaluated by the yield of shrink generation.
The evaluation criteria for the sealing properties are as follows.
A: No shrinkage occurred.
○: Shrinkage is 1 or more and 2 or less.
Δ: Shrinkage is 3 or more and less than 5.
X: Shrink generation is 5 or more.

  From Table 1, the organic EL display devices of Examples 1 to 5 in which the organic EL element is sealed by bonding the metal layer of the insulating member and the low melting point metal layer of the sealing member are the insulating members. The adhesion and sealing properties were superior to those of the organic EL display devices of Comparative Examples 1 to 5 having no metal layer.

  The organic EL display device of the present invention has excellent adhesion between a substrate and a sealing member and has excellent sealing performance of an organic EL element, and a bottom emission type organic EL display device and a top emission type organic EL display It is suitable as any device, and can be suitably used for, for example, organic EL lighting.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Junction part of insulating member and sealing plate 3 Organic EL element 41 Sealing member 42 Low melting point metal layer 43 Metal layer 44 Insulating member 45 Metal intercalation compound 51 Cathode 52 Anode
53 Organic Compound Layer 61 Glass Substrate 62 Insulating Member 63 Metal Layer 64 Sealing Area 67 Transparent Electrode (Anode)
68 Organic compound layer 70 Reflective electrode (cathode)
71 Sealing member 72 Low melting point metal layer 75 Reflective anode 76 Counter electrode (semi-transmissive cathode)
81 Substrate 82 Buffer layer 83 Channel layer 84 Gate insulating film 85 Gate electrode 86 Interlayer insulating film 87 Source region contact hole 88 Drain region contact hole 89 Source electrode 90 Drain electrode 91 Lower electrode 92 Interlayer insulating film 93 Opening contact hole

Claims (8)

An organic electroluminescent display device comprising: an organic electroluminescent element having a pair of electrodes and an organic compound layer including a light emitting layer between the pair of electrodes; a substrate having an insulating member disposed on a surface; and a sealing member. Because
The insulating member is disposed at least on the outer periphery of the organic electroluminescent element region;
The sealing member has a low melting point metal layer at least in a portion corresponding to the insulating member;
The insulating member has a metal layer containing a metal that forms a metal intercalation compound with a metal contained in the low-melting-point metal layer on a surface opposite to the substrate;
An organic electroluminescent display device, wherein the organic electroluminescent element is sealed by bonding a metal layer of the insulating member and a low melting point metal layer of the sealing member.   The organic electroluminescent display device according to claim 1, wherein the insulating member is formed by laminating a layer made of the same component as that of one electrode of the organic electroluminescent element and a metal layer in this order on the surface opposite to the substrate.   Furthermore, the organic electroluminescent display apparatus in any one of Claim 1 to 2 with which the insulating member is arrange | positioned inside the organic electroluminescent element area | region.   Furthermore, the organic electroluminescent display apparatus in any one of Claim 1 to 3 with which the insulating member is arrange | positioned in the part adjacent to each organic electroluminescent element.   The organic electroluminescent display device according to any one of claims 1 to 4, wherein the insulating member disposed in the outer peripheral portion of the organic electroluminescent element region is not adjacent to the organic electroluminescent element.   The organic electroluminescent display device according to claim 1, wherein the insulating member has a tapered shape.   The organic electroluminescent display device according to claim 1, wherein one surface of the sealing member has a low melting point metal layer.   The organic electroluminescence display device according to claim 1, wherein the metal layer of the insulating member and the low melting point metal layer of the sealing member are joined by a laser.