JP4833106B2 - Organic light emitting device - Google Patents

Description

  The present invention relates to an organic light emitting device having improved external quantum efficiency. In particular, the present invention relates to an organic light emitting device that can be effectively used for a surface light source such as a full color display, a backlight, and an illumination light source, and a light source array such as a printer.

  An organic light emitting element (hereinafter abbreviated as an organic EL element) is composed of a light emitting layer or a plurality of organic functional layers including a light emitting layer, and a counter electrode sandwiching these layers. In the organic EL element, electrons injected from the cathode and holes injected from the anode are recombined in the light emitting layer, emitted light from the generated excitons, and other molecules generated by energy transfer from the excitons. It is an element for obtaining light emission utilizing light emission from at least one of the excitons.

  Until now, organic EL elements have been developed with greatly improved brightness and element efficiency by using a laminated structure with separated functions. For example, a two-layer stacked device in which a hole transport layer and a light-emitting / electron transport layer are stacked, a three-layer stacked device in which a hole transport layer, a light-emitting layer, and an electron transport layer are stacked, a hole transport layer, and a light-emitting layer A four-layer stacked element in which a hole blocking layer and an electron transport layer are stacked is often used (see Non-Patent Document 1, for example).

  However, many problems still remain in practical use of organic EL elements. The first is to achieve high external quantum efficiency, and the second is to achieve high driving durability.

  For example, an interface layer of 0.1 nm to 5.0 nm is provided as a barrier layer between the light emitting layer and the hole transport layer, and the movement balance of the holes and electrons is adjusted by slowing the movement of the holes to externally Attempts to increase quantum efficiency have been proposed (see, for example, Patent Document 1). However, with this means, since the movement of the carrier as a whole is reduced, the luminance is lowered, the drive voltage is increased, and the dwell time in the element of the carrier is increased, so that there is a concern that the drive durability is lowered.

  A configuration in which two light emitting layers are used and a hole barrier layer is provided between them is disclosed (for example, see Patent Document 2). However, even with this means, the movement of the carrier as a whole is lowered, so that the luminance is lowered, the drive voltage is increased, and there is a concern that the drive durability is lowered because the residence time of the carrier in the element is increased.

  A multiphoton organic EL element is disclosed, and a plurality of light emitting layers are separated from each other by an electrically insulating charge generation layer (see, for example, Patent Document 3). However, even in this configuration, a plurality of light emitting units are simply stacked, and it is not a means for improving the low external quantum efficiency inherent to each light emitting unit.

To achieve both high external quantum efficiency and high driving durability is an extremely important issue in designing a practically useful organic EL device, and has always been a demand for improvement.
Science, 267, 3, 1995, p. 1332 JP 2003-123984 A JP 2005-276583 A JP 2003-45676 A

  An object of the present invention is to provide an organic EL device with improved external quantum efficiency.

It has been found that the above-mentioned problems of the present invention can be solved by the following means.
<1> An organic electroluminescent device comprising at least a light emitting layer sandwiched between a pair of electrodes, wherein the light emitting layer is divided into at least three layers in the thickness direction, a first light emitting layer close to the anode and a cathode close A third light-emitting layer, and a second light-emitting layer positioned between the first light-emitting layer and the third light-emitting layer, wherein the first to third light-emitting layers have carbazole as a host material in the molecule. A compound having a group, and as a light emitting material, one or more selected from the following D-21 to D-24, and compared with the hole mobility in the first light emitting layer and the third light emitting layer, An organic light emitting device having a small hole mobility in the second light emitting layer.

<2> The hole mobility (μ1) in the first light emitting layer, the hole mobility (μ2) in the second light emitting layer, and the hole mobility (μ3) in the third light emitting layer satisfy the following expressions. <1> The organic light-emitting device according to <1>.
1 × 10 ⁻⁴ ≦ μ2 / μ1 ≦ 1 × 10 ⁻¹ (Formula 1)
1 × 10 ⁻⁴ ≦ μ2 / μ3 ≦ 1 × 10 ⁻¹ (Formula 2)
<3> The hole mobility (μ2) in the second light emitting layer is 1 × 10 ⁻⁷ cm ² · V ⁻¹ · sec ⁻¹ or more and 1 × 10 ⁻⁴ cm ² · V ⁻¹ · sec ⁻¹ or less. The organic light-emitting device according to <1> or <2>, wherein
<4> prior Symbol first light-emitting layer, the second light-emitting layer and the third emitting layer each independently comprises a first light emitting material and the first host material,
1) The hole mobility of the first host material of the first light emitting layer, the second light emitting layer, and the third light emitting layer is substantially equal, and
2) The second light emitting layer further contains a second host material, and the hole mobility of the second host material is smaller than that of the first host material. <1> to <3> The organic light emitting element of any one of these .
< 5 > The organic light-emitting element according to < 4 >, wherein the first host material contained in the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer is the same compound.
< 6 > The first light emitting layer and the third light emitting layer each contain a first light emitting material and a first host material, and the first host material of the first light emitting layer and the third light emitting layer is The hole mobility is substantially the same, and the second light emitting layer contains the first light emitting material and the second host material, and the second host material has a hole mobility smaller than that of the first host material. <1>-<3> The organic light-emitting device according to any one of <1> to <3> .
< 7 > The organic light-emitting element according to < 6 >, wherein the first host material contained in the first light-emitting layer and the third light-emitting layer is the same compound.
< 8 > The hole mobility M2 of the second host material is 1 × 10 ⁻⁷ cm ² · V ⁻¹ · sec ⁻¹ or more and 1 × 10 ⁻⁴ cm ² · V ⁻¹ · sec ⁻¹ or less. <5>-< 7 > characterized by these. The organic light emitting element of any one of < 7 >.
< 9 > Any one of <5> to < 8 >, wherein an ionization potential (Ip) of the second host material is smaller than an ionization potential (Ip) of the first host material. The organic light emitting device according to item.
< 10 > The organic light-emitting device according to < 9 >, wherein a difference (ΔIp) between Ip of the first host material and Ip of the second host material is 0.2 eV or more and 1.0 eV or less. .
< 11 > When the hole mobility of the host material contained in the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer is M1, M2, and M3, respectively, the following formula is satisfied: < 5 > to < 10 > The organic light emitting device according to any one of < 10 >.
1 × 10 ⁻⁴ ≦ M2 / M1 ≦ 1 × 10 ⁻¹ (Formula 3)
1 × 10 ⁻⁴ ≦ M2 / M3 ≦ 1 × 10 ⁻¹ (Formula 4 )

  According to the present invention, an organic EL device with dramatically improved external quantum efficiency is provided. Furthermore, an organic EL device with improved driving durability as well as improved external quantum efficiency is provided.

The organic EL device of the present invention is an organic electroluminescent device comprising at least a light emitting layer sandwiched between a pair of electrodes, wherein the light emitting layer is divided into at least three layers in the thickness direction, and each light emitting layer comprises a host material. A first luminescent layer close to the anode and a third luminescent layer close to the cathode, including a compound having a carbazole group in the molecule as a light-emitting material and including at least one selected from the above D-21 to D-24 The hole mobility in the second light-emitting layer located between the first light-emitting layer and the third light-emitting layer is smaller than that in FIG.
The light emitting layer in the present application is subdivided into three or more layers. In the case of four or more layers, the hole mobility of each layer may satisfy the above conditions when any three of them are selected.

  As a result of analyzing the cause of the low external quantum efficiency in the light-emitting element, the present inventors have found that main light emission occurs near a very limited interface between the light-emitting layer and the adjacent layer, and the charge is limited to this limit. As a result of localization at the interface, it was estimated that the deterioration was caused gradually until recombination.

  As a result of earnest search for improvement means, the present inventors subdivide the light emitting layer into a plurality of thin light emitting layers in the thickness direction, and the hole mobility of each subdivided light emitting layer satisfies a specific condition, that is, The hole mobility in the second light emitting layer located between the first light emitting layer and the third light emitting layer is compared with the hole mobility in the first light emitting layer close to the anode and the third light emitting layer close to the cathode. We found that it can be solved by making it smaller. According to the present invention, it is possible to increase the external quantum efficiency of light emission without increasing the driving resistance. Furthermore, since the carrier residence time does not become long, high luminous efficiency can be achieved without deteriorating the driving durability.

Preferably, the hole mobility (μ1) in the first light emitting layer, the hole mobility (μ2) in the second light emitting layer, and the hole mobility (μ3) in the third light emitting layer satisfy a relationship satisfying the following formula: To do.
1 × 10 ⁻⁴ ≦ μ2 / μ1 ≦ 1 × 10 ⁻¹ (Formula 1)
1 × 10 ⁻⁴ ≦ μ2 / μ3 ≦ 1 × 10 ⁻¹ (Formula 2)
Preferably, the hole mobility (μ2) in the second light emitting layer is 1 × 10 ⁻⁷ cm ² · V ⁻¹ · sec ⁻¹ or more and 1 × 10 ⁻⁴ cm ² · V ⁻¹ · sec ⁻¹ or less. .
The hole mobility in the present invention is a hole mobility measured at 25 ° C. and an electric field of 1 × 10 ⁶ V / cm by a time-of-flight method (TIME OF FLASH METHOD). The mobility measurement method by the time-of-flight method can be carried out according to the measurement method described in “Optical / Electronic Functional Material Handbook” (1995, p. 287, Kazuyuki Horie (Asakura Shoten)).
In one embodiment of the light-emitting element of the present invention, the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer each independently contain one kind of host material, and the first light-emitting layer and the first light-emitting element It is an organic light emitting device in which the mobility of the host material contained in the second light emitting layer is smaller than the hole mobility of the host material contained in the three light emitting layers. Preferably, each hole mobility M1, M2, and M3 in the electric field 1 × 10 ⁶ V / cm of the host material contained in the first light emitting layer, the second light emitting layer, and the third light emitting layer is as follows: Satisfies the equation.
1 × 10 ⁻⁴ ≦ M2 / M1 ≦ 1 × 10 ⁻¹ (Formula 3)
1 × 10 ⁻⁴ ≦ M2 / M3 ≦ 1 × 10 ⁻¹ (Formula 4)
Preferably, the hole mobility M2 of the host material contained in the second light emitting layer is 1 × 10 ⁻⁷ cm ² · V ⁻¹ · sec ⁻¹ or more and 1 × 10 ⁻⁴ cm ² · V ⁻¹ · sec ^−1. It is as follows.

  Preferably, the host material contained in the second light emitting layer is a compound having a carbazole group. More preferably, the host material contained in the second light emitting layer is a compound having a t-butyl substituted carbazole group.

In a preferred embodiment of the light emitting device of the present invention, the first light emitting layer, the second light emitting layer, and the third light emitting layer each independently contain a first host material having substantially the same hole mobility. Furthermore, the second light-emitting layer is a light-emitting element containing a second host material having a smaller Ip than the ionization potential (Ip) of the first host material.
More preferably, the content of the second host material is 1% by mass or more and 20% by mass or less of the total amount of the host material.
Preferably, the difference (ΔIp) between the Ip value of the first host material and the Ip value of the second host material is 0.2 eV or more and 1.0 eV or less.

Preferably, the first host material contained in the first light emitting layer, the second light emitting layer, and the third light emitting layer is the same compound.
Before Symbol light-emitting material is a phosphorescent light-emitting material.
By configuring the light emitting element in the present invention as described above, the light emitting region can be formed in the central portion of the light emitting layer, and high light emission efficiency and durability can be realized.

1. Division of Light-Emitting Layer The organic EL device of the present invention is divided into at least three layers, a first light-emitting layer close to the anode, a third light-emitting layer close to the cathode, and between the first light-emitting layer and the third light-emitting layer. It has the 2nd light emitting layer located. The first light-emitting layer, the second light-emitting layer, and the third light-emitting layer each include one or more light-emitting materials selected from the D-21 to D-24 and a compound having a carbazole group in the molecule. As a host material , the hole mobility in the second light emitting layer is smaller than the hole mobility in the first light emitting layer and the third light emitting layer.
When dividing into four or more layers, the hole mobility of each layer should satisfy the above condition when any three layers are selected.
The light emitting layer used in the present invention is preferably 3 or more and 10 or less, more preferably 3 or more and 5 or less, and most preferably 3 layers in order to achieve high luminous efficiency and durability.
In order to achieve high luminous efficiency and durability, the thickness of the divided light emitting layer in the present invention is preferably 1 nm or more and 100 nm or less, more preferably 10 nm or more and 80 nm or less, and further preferably 10 nm or more and 60 nm or less.
The total thickness of the light emitting layer in the present invention is preferably 1 nm or more and 500 nm or less, more preferably 10 nm or more and 100 nm or less, and further preferably 20 nm or more and 80 nm or less, in order to achieve high luminous efficiency and durability.

(Divided layer structure)
The layer structure will be described with reference to the drawings. The illustrated layer configuration shows only the layers necessary to explain the intent of the present application. Elements that are necessary for the light emitting element but are not directly necessary for the description of the present application are omitted. FIG. 1 is a schematic view of a layer structure of a comparative light emitting device. A substrate (not shown) has an anode electrode 1 made of ITO or the like, and a hole injection layer 2, a hole transport layer 3, a light emitting layer 4, an electron transport layer 5, an electron injection layer 6, And a cathode 7 made of metal such as aluminum. FIG. 2 shows an example of the light emitting device of the present application, in which the light emitting layer is divided into three parts, a first light emitting layer 4a, a second light emitting layer 4b, and a third light emitting layer 4c. Each light emitting layer can contain a light emitting material and a host material independently. However, as one preferred embodiment, the light emitting material contains the same material in all three layers, and the host material is the same as the first light emitting layer 4a. The third light emitting layer 4c is the same common material, and the second light emitting layer 4b contains another host material and a hole transporting host material having a low hole mobility. The total thickness of the three light emitting layers is substantially the same as that of the light emitting layer 4 in FIG.

2. Organic EL element As a form of lamination | stacking of the organic compound layer in this invention, the aspect laminated | stacked in order of the positive hole transport layer, the light emitting layer, and the electron carrying layer from the anode side is preferable. Further, a hole injection layer is provided between the hole transport layer and the anode, and an electron transporting intermediate layer is provided between at least one of the light emitting layer and the electron transport layer. Further, a hole transporting intermediate layer may be provided between the light emitting layer and the hole transport layer, and similarly, an electron injection layer may be provided between the cathode and the electron transport layer.

  A preferred embodiment of the organic compound layer in the organic electroluminescence device of the present invention is, in order from the anode side, at least (1) a hole injection layer, a hole transport layer (the hole injection layer and the hole transport layer may serve as both). Good), a hole transporting intermediate layer, a light emitting layer, an electron transport layer, and an electron injection layer (the electron transport layer and the electron injection layer may serve both), (2) hole injection layer, hole Transport layer (hole injection layer and hole transport layer may serve as well), light emitting layer, electron transport intermediate layer, electron transport layer, and electron injection layer (electron transport layer and electron injection layer may serve as well) (3) hole injection layer, hole transport layer (hole injection layer and hole transport layer may be combined), hole transport intermediate layer, light emitting layer, electron transport intermediate layer, This is an embodiment having an electron transport layer and an electron injection layer (the electron transport layer and the electron injection layer may serve as each other).

The hole transporting intermediate layer preferably has at least one of a function of accelerating hole injection into the light emitting layer and a function of blocking electrons.
The electron transporting intermediate layer preferably has at least one of a function of promoting electron injection into the light emitting layer and a function of blocking holes.
Furthermore, it is preferable that at least one of the hole transporting intermediate layer and the electron transporting intermediate layer has a function of blocking excitons generated in the light emitting layer.
In order to effectively express the functions of hole injection promotion, electron injection promotion, hole block, electron block, and exciton block, the hole transporting intermediate layer and the electron transporting intermediate layer are formed of a light emitting layer. It is preferable that it adjoins.
Each layer may be divided into a plurality of secondary layers.

The organic EL element in the present invention may have a resonator structure. For example, a multilayer mirror made of a plurality of laminated films having different refractive indexes, a transparent or translucent electrode, a light emitting layer, and a metal electrode are superimposed on a transparent substrate. The light generated in the light emitting layer resonates repeatedly with the multilayer mirror and the metal electrode as a reflection plate.
In another preferred embodiment, a transparent or translucent electrode and a metal electrode each function as a reflector on a transparent substrate, and light generated in the light emitting layer repeats reflection and resonates between them.
In order to form a resonant structure, the optical path length determined from the effective refractive index of the two reflectors and the refractive index and thickness of each layer between the reflectors is adjusted to an optimum value to obtain the desired resonant wavelength. Is done.
The calculation formula in the case of the first embodiment is described in JP-A-9-180883. The calculation formula in the case of the second aspect is described in Japanese Patent Application Laid-Open No. 2004-127795.

  Each layer constituting the organic compound layer can be suitably formed by any of dry film forming methods such as vapor deposition and sputtering, transfer methods, printing methods, coating methods, ink jet methods, and spray methods.

  Next, elements constituting the light emitting device of the present invention will be described in detail.

(Light emitting layer)
The light emitting layer receives holes from the anode, hole injection layer, hole transport layer, or hole transport intermediate layer when an electric field is applied, and receives electrons from the cathode, electron injection layer, electron transport layer, or electron transport intermediate layer. It is a layer having a function of receiving and providing a field for recombination of holes and electrons to emit light.
The light-emitting layer in the invention, the D-21~D-24 and one or more luminescent dopant selected from, the host compound is a compound having a carbazole group in the molecule and the including.

The luminescent dopant and a host compound contained in the light-emitting layer in the present invention, is a combination of the light emission (phosphorescence) phosphorescence is obtained luminescent dopant and a host compound from triplet excitons.
The light emitting layer in the present invention can contain two or more kinds of light emitting dopants in order to improve color purity and to broaden the light emission wavelength region.

As the luminescent dopant in the present invention, any of phosphorescent luminescent materials and fluorescent luminescent materials can be used as the dopant.
The luminescent dopant in the present invention is a dopant satisfying at least one of the relations of 1.2 eV>ΔIp> 0.2 eV and 1.2 eV>ΔEa> 0.2 eV with the host compound. Is preferable from the viewpoint of driving durability.

《Phosphorescent dopant》
In general, examples of the phosphorescent light-emitting dopant include complexes containing a transition metal atom or a lanthanoid atom.
For example, the transition metal atom is not particularly limited, but preferably includes ruthenium, rhodium, palladium, tungsten, rhenium, osmium, iridium, gold, silver, copper, and platinum, and more preferably rhenium, iridium. And platinum, more preferably iridium and platinum.
Examples of lanthanoid atoms include lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium. Among these lanthanoid atoms, neodymium, europium, and gadolinium are preferable.

Examples of the ligand of the complex include G.I. Wilkinson et al., Comprehensive Coordination Chemistry, Pergamon Press, 1987, H.C. Examples include ligands described in Yersin's "Photochemistry and Photophysics of Coordination Compounds" published by Springer-Verlag 1987, Akio Yamamoto "Organic Metal Chemistry-Fundamentals and Applications-" .
The specific ligand is preferably a halogen ligand (preferably a chlorine ligand) or an aromatic carbocyclic ligand (for example, preferably 5 to 30 carbon atoms, more preferably 6 to 6 carbon atoms). 30, more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms, such as a cyclopentadienyl anion, a benzene anion, or a naphthyl anion), a nitrogen-containing heterocyclic ligand (for example, preferably Has 5 to 30 carbon atoms, more preferably 6 to 30 carbon atoms, still more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms, and phenylpyridine, benzoquinoline, quinolinol, bipyridyl, or phenanthroline. Etc.), diketone ligand (for example, acetylacetone, etc.), carboxylic acid ligand (for example, preferably 2-30 carbon atoms, and more) Preferably, it has 2 to 20 carbon atoms, more preferably 2 to 16 carbon atoms, such as an acetic acid ligand), an alcoholate ligand (for example, preferably 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms). More preferably, it has 6 to 20 carbon atoms, such as phenolate ligand), silyloxy ligand (for example, preferably 3 to 40 carbon atoms, more preferably 3 to 30 carbon atoms, still more preferably 3 to 3 carbon atoms). 20 such as trimethylsilyloxy ligand, dimethyl-tert-butylsilyloxy ligand, triphenylsilyloxy ligand), carbon monoxide ligand, isonitrile ligand, cyano ligand, Phosphorus ligand (preferably having 3 to 40 carbon atoms, more preferably 3 to 30 carbon atoms, still more preferably 3 to 20 carbon atoms, and particularly preferably 6 to 20 carbon atoms. A rephenylphosphine ligand), a thiolato ligand (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, still more preferably 6 to 20 carbon atoms, such as a phenylthiolato ligand) ), A phosphine oxide ligand (preferably having 3 to 30 carbon atoms, more preferably 8 to 30 carbon atoms, still more preferably 18 to 30 carbon atoms, such as a triphenylphosphine oxide ligand). More preferably, it is a nitrogen-containing heterocyclic ligand.
The complex may have one transition metal atom in the compound, or may be a so-called binuclear complex having two or more. Different metal atoms may be contained at the same time.

  Among these, specific examples of the luminescent dopant include, for example, US6303238B1, US6097147, WO00 / 57676, WO00 / 70655, WO01 / 08230, WO01 / 39234A2, WO01 / 41512A1, WO02 / 02714A2, WO02 / 15645A1, WO02 / 44189A1. JP-A-2001-247859, JP-A-2002-302671, JP-A-2002-117978, JP-A-2003-133074, JP-A-2002-235076, JP-A-2003-123982, JP-A-2002-170684, EP-121257, JP-A-2002-226495 JP, 2002-234894, JP, 2001-247859, JP, 2001-298470, JP, 2002-173673, JP, 2002. 203678, JP-A-2002-203679, JP-A-2004-357799, JP-A-2006-256999, Japanese Patent Application No. 2005-75341, and the like, and more preferable examples of the luminescent dopant include: Examples include Ir complex, Pt complex, Cu complex, Re complex, W complex, Rh complex, Ru complex, Pd complex, Os complex, Eu complex, Tb complex, Gd complex, Dy complex, and Ce complex. Particularly preferred is an Ir complex, a Pt complex, or a Re complex, among which an Ir complex or a Pt complex containing at least one coordination mode of a metal-carbon bond, a metal-nitrogen bond, a metal-oxygen bond, and a metal-sulfur bond. Or a Re complex.

<Fluorescent luminescent dopant>
As the fluorescent light-emitting dopant, generally, benzoxazole, benzimidazole, benzothiazole, styrylbenzene, polyphenyl, diphenylbutadiene, tetraphenylbutadiene, naphthalimide, coumarin, pyran, perinone, oxadiazole, aldazine, Pyraridin, cyclopentadiene, bisstyrylanthracene, quinacridone, pyrrolopyridine, thiadiazolopyridine, cyclopentadiene, styrylamine, aromatic dimethylidin compounds, condensed polycyclic aromatic compounds (anthracene, phenanthroline, pyrene, perylene, rubrene, or pentacene, etc. ), 8-quinolinol metal complexes, various metal complexes represented by pyromethene complexes and rare earth complexes, polythiophene, polyphenylene, polyphenylene Polymeric compounds such as vinylene, organic silane, and the like, and their derivatives.

Among these, specific examples of the luminescent dopants, Ru include the followings.

The luminescent dopant used in the present invention is D-21, D-22, D-23, or D-24 from the viewpoints of luminous efficiency and durability .

  The light-emitting dopant in the light-emitting layer is contained in an amount of 0.1% by mass to 50% by mass with respect to the total compound mass generally forming the light-emitting layer in the light-emitting layer. Is preferably contained in an amount of 1% by mass to 15% by mass, and more preferably 2% by mass to 40% by mass.

  Although the thickness of the light emitting layer is not particularly limited, it is usually preferably 2 nm to 500 nm, more preferably 3 nm to 200 nm, and more preferably 5 nm to 100 nm from the viewpoint of external quantum efficiency. More preferably.

(Host material)
In one embodiment, the host material used in the present invention has a space between the first light emitting layer and the third light emitting layer as compared with the hole mobility in the first light emitting layer close to the anode and the third light emitting layer close to the cathode. It is preferable to use a material having a low hole mobility in the second light emitting layer located at the position.
Preferably, a material is selected such that the hole mobility (μ1) in the first light emitting layer, the hole mobility (μ2) in the second light emitting layer, and the hole mobility (μ3) in the third light emitting layer satisfy the following expressions.
1 × 10 ⁻⁴ ≦ μ2 / μ1 ≦ 1 × 10 ⁻¹ (Formula 1)
1 × 10 ⁻⁴ ≦ μ2 / μ3 ≦ 1 × 10 ⁻¹ (Formula 2)
Preferably, the hole mobility (μ2) of the second light emitting layer is 1 × 10 ⁻⁷ cm ² · V ⁻¹ · sec ⁻¹ or more and 1 × 10 ⁻⁴ cm ² · V ⁻¹ · sec ⁻¹ or less.
In addition, the hole mobilities M1, M2, and M3 of the host material contained in the first light emitting layer, the second light emitting layer, and the third light emitting layer satisfy the following formula at an electric field of 1 × 10 ⁶ V / cm.
1 × 10 ⁻⁴ ≦ M2 / M1 ≦ 1 × 10 ⁻¹ (Formula 3)
1 × 10 ⁻⁴ ≦ M2 / M3 ≦ 1 × 10 ⁻¹ (Formula 4)
Preferably, the hole mobility M2 of the host material contained in the second light-emitting layer is 1 × 10 ⁻⁷ cm ² · V ⁻¹ · sec ⁻¹ or more and 1 × 10 ⁻⁴ cm ² · V ⁻¹ · sec ^−1. It is as follows.

In one embodiment, the second light emitting layer contains at least two kinds of host materials, the Ip value of the first host material is larger than the Ip value of the second host material, and the content of the second host material is It is 1 mass% or more and 20 mass% or less of the total amount of host materials.
Preferably, the difference (ΔIp) between the Ip value of the first host material and the Ip value of the second host material is 0.2 eV or more and 1.0 eV or less.
Preferably, the first host material contained in the first light emitting layer, the second light emitting layer, and the third light emitting layer is the same compound, and the second host material of the second light emitting layer is the first light emitting layer and the first light emitting layer. Different from the host material of 3 light emitting layers.

  As the host material used in the present invention, a material satisfying the above conditions can be selected from the materials described below.

As the host material used in the present invention, a hole transporting host material excellent in hole transportability (sometimes referred to as a hole transportable host) and an electron transporting host compound excellent in electron transportability (electron transportability) May be described as a host).
The host material used in the present invention is mainly a hole transporting host material.

<Hole transportable host>
Specific examples of the hole-transporting host used in the present invention include the following materials.
Those having a carbazole group in the molecular, in particular, compounds having a t- butyl substituent carbazole group.
Specific examples of such a hole transporting host include, but are not limited to , the following H-1 to H-8 and H-17 to H-28 .

As a hole transport host, H-1 to H-8, H-17 to H-21 are preferable, H-1 to H-8, and H-17 to H-18 are more preferable. H-1, H-4 ~ H-6 , H- 17, and H-18 are more preferred.

<Electron transporting host>
As a host material used in the present invention, an electron transporting host compound having excellent electron transportability (may be described as an electron transporting host) may be used together with a hole transporting host material having excellent hole transportability. .
The electron transporting host in the light emitting layer used in the present invention preferably has an electron affinity Ea of 2.5 eV or more and 3.5 eV or less from the viewpoint of improving durability and lowering driving voltage. More preferably, it is 0.4 eV or less, and further preferably 2.8 eV or more and 3.3 eV or less. Further, from the viewpoint of improving durability and reducing driving voltage, the ionization potential Ip is preferably 5.7 eV or more and 7.5 eV or less, more preferably 5.8 eV or more and 7.0 eV or less, and 5.9 eV or more. More preferably, it is 6.5 eV or less.

Specific examples of such an electron transporting host include the following materials.
Pyridine, pyrimidine, triazine, imidazole, pyrazole, triazole, oxazole, oxadiazol, fluorenone, anthraquinodimethane, anthrone, diphenylquinone, thiopyran dioxide, carbodiimide, fluorenylidenemethane, distyrylpyrazine, Fluorine-substituted aromatic compounds, heterocyclic tetracarboxylic anhydrides such as naphthaleneperylene, phthalocyanines, and derivatives thereof (may form condensed rings with other rings), metal complexes and metals of 8-quinolinol derivatives Examples thereof include various metal complexes represented by metal complexes having phthalocyanine, benzoxazole or benzothiazol as a ligand.

Preferred examples of the electron transporting host include metal complexes, azole derivatives (benzimidazole derivatives, imidazopyridine derivatives, etc.), and azine derivatives (pyridine derivatives, pyrimidine derivatives, triazine derivatives, etc.). To metal complex compounds are preferred. The metal complex compound (A) is more preferably a metal complex having a ligand having at least one nitrogen atom, oxygen atom or sulfur atom coordinated to the metal.
The metal ion in the metal complex is not particularly limited, but is preferably beryllium ion, magnesium ion, aluminum ion, gallium ion, zinc ion, indium ion, tin ion, platinum ion, or palladium ion, more preferably beryllium ion, Aluminum ion, gallium ion, zinc ion, platinum ion, or palladium ion, and more preferably aluminum ion, zinc ion, or palladium ion.

  There are various known ligands contained in the metal complex. For example, “Photochemistry and Photophysics of Coordination Compounds”, Springer-Verlag, H.C. Examples include the ligands described in Yersin, published in 1987, “Organometallic Chemistry: Fundamentals and Applications”, Sakai Hanafusa, Yamamoto Akio, published in 1982, and the like.

The ligand is preferably a nitrogen-containing heterocyclic ligand (preferably having 1 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, particularly preferably 3 to 15 carbon atoms, and a monodentate ligand. Alternatively, it may be a bidentate or higher ligand, preferably a bidentate or higher and a hexadentate or lower ligand, or a bidentate or higher and lower 6 or lower ligand and a monodentate mixed ligand. preferable.
Examples of the ligand include an azine ligand (for example, pyridine ligand, bipyridyl ligand, terpyridine ligand, etc.), a hydroxyphenylazole ligand (for example, hydroxyphenylbenzimidazole coordination). And a hydroxyphenyl benzoxazole ligand, a hydroxyphenyl imidazole ligand, a hydroxyphenylimidazopyridine ligand, etc.), an alkoxy ligand (preferably having 1 to 30 carbon atoms, more preferably 1 carbon atom). To 20, particularly preferably 1 to 10 carbon atoms, such as methoxy, ethoxy, butoxy, 2-ethylhexyloxy), aryloxy ligands (preferably 6 to 30 carbon atoms, more preferably 6-20 carbon atoms, particularly preferably 6-12 carbon atoms, for example phenyl Carboxymethyl, 1-naphthyloxy, 2-naphthyloxy, 2,4,6-trimethylphenyl oxy, and 4-biphenyloxy and the like.),

Heteroaryloxy ligand (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, and examples thereof include pyridyloxy, pyrazyloxy, pyrimidyloxy, and quinolyloxy. ), An alkylthio ligand (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, such as methylthio and ethylthio), arylthio ligands (Preferably 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms, such as phenylthio), heteroarylthio ligand (preferably 1 carbon atom) To 30, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, such as pyridylthio , 2-benzimidazolylthio, 2-benzoxazolylthio, 2-benzthiazolylthio, etc.), a siloxy ligand (preferably having 1 to 30 carbon atoms, more preferably 3 to 25 carbon atoms). Particularly preferably, it has 6 to 20 carbon atoms, and examples thereof include a triphenylsiloxy group, a triethoxysiloxy group, and a triisopropylsiloxy group.), An aromatic hydrocarbon anion ligand (preferably having 6 carbon atoms) To 30, more preferably 6 to 25 carbon atoms, particularly preferably 6 to 20 carbon atoms, such as a phenyl anion, a naphthyl anion, an anthranyl anion, etc.), an aromatic heterocyclic anion ligand (preferably Has 1 to 30 carbon atoms, more preferably 2 to 25 carbon atoms, and particularly preferably 2 to 20 carbon atoms. Pyrrole anion, pyrazole anion, pyrazole anion, triazole anion, oxazole anion, benzoxazole anion, thiazole anion, benzothiazole anion, thiophene anion, benzothiophene anion, etc.), indolenine anion ligand, etc. , Preferably a nitrogen-containing heterocyclic ligand, aryloxy ligand, heteroaryloxy group, or siloxy ligand, more preferably a nitrogen-containing heterocyclic ligand, aryloxy ligand, siloxy coordination Or an aromatic hydrocarbon anion ligand or an aromatic heterocyclic anion ligand.

  Examples of the metal complex electron transporting host are described in, for example, JP-A No. 2002-235076, JP-A No. 2004-214179, JP-A No. 2004-221106, JP-A No. 2004-221665, JP-A No. 2004-221068, JP-A No. 2004-327313, etc. The compound of this is mentioned.

  Specific examples of such an electron transporting host include, but are not limited to, the following materials.

  As the electron transport layer host, E-1 to E-6, E-8, E-9, E-21, or E-22 are preferable, and E-3, E-4, E-6, E-8, E-9, E-10, E-21, or E-22 is more preferable, and E-3, E-4, E-21, or E-22 is still more preferable.

  In the light emitting layer of the present invention, it is preferable in terms of color purity, light emission efficiency, and driving durability that the triplet lowest excitation level (T1) of the two types of host materials is higher than T1 of the phosphorescent light emitting material.

  Further, the content of the host compound in the present invention is not particularly limited, but from the viewpoint of light emission efficiency and driving voltage, it is 15% by mass to 95% by mass with respect to the total compound mass forming the light emitting layer. Preferably there is.

(Hole injection layer, hole transport layer)
The hole injection layer and the hole transport layer are layers having a function of receiving holes from the anode or the anode side and transporting them to the cathode side.

  As the electron-accepting dopant introduced into the hole-injecting layer or the hole-transporting layer, an inorganic compound or an organic compound can be used as long as it has an electron-accepting property and oxidizes an organic compound. As the compound, metal halides such as ferric chloride, aluminum chloride, gallium chloride, indium chloride, and antimony pentachloride, and metal oxides such as vanadium pentoxide and molybdenum trioxide can be suitably used.

In the case of an organic compound, a compound having a nitro group, halogen, cyano group, trifluoromethyl group or the like as a substituent, a quinone compound, an acid anhydride compound, fullerene, or the like can be preferably used.
Specifically, hexacyanobutadiene, hexacyanobenzene, tetracyanoethylene, tetracyanoquinodimethane, tetrafluorotetracyanoquinodimethane, p-fluoranyl, p-chloranil, p-bromanyl, p-benzoquinone, 2,6-dichlorobenzoquinone 2,5-dichlorobenzoquinone, tetramethylbenzoquinone, 1,2,4,5-tetracyanobenzene, o-dicyanobenzene, p-dicyanobenzene, 1,4-dicyanotetrafluorobenzene, 2,3-dichloro-5 , 6-dicyanobenzoquinone, p-dinitrobenzene, m-dinitrobenzene, o-dinitrobenzene, p-cyanonitrobenzene, m-cyanonitrobenzene, o-cyanonitrobenzene, 1,4-naphthoquinone, 2,3-dichloronaphthoquinone, 1 Nitronaphthalene, 2-nitronaphthalene, 1,3-dinitronaphthalene, 1,5-dinitronaphthalene, 9-cyanoanthracene, 9-nitroanthracene, 9,10-anthraquinone, 1,3,6,8-tetranitrocarbazole, 2,4,7-trinitro-9-fluorenone, 2,3,5,6-tetracyanopyridine, maleic anhydride, phthalic anhydride, fullerene C60, fullerene C70 and the like. 11-111463, 11-251067, JP 2000-196140, 2000-286054, 2000-315580, 2001-102175, 2001-160493, 2002-252085, 2002-56985, 2003. 157981, 20 3-271862, the 2003-229278, said 2004-342614, said 2005-72012, the 2005-166637, compounds can be suitably used according to the 2005-209643 or the like.

  Among these, hexacyanobutadiene, hexacyanobenzene, tetracyanoethylene, tetracyanoquinodimethane, tetrafluorotetracyanoquinodimethane, p-fluoranyl, p-chloranil, p-bromanyl, p-benzoquinone, 2,6-dichlorobenzoquinone, 2 , 5-dichlorobenzoquinone, 1,2,4,5-tetracyanobenzene, 1,4-dicyanotetrafluorobenzene, 2,3-dichloro-5,6-dicyanobenzoquinone, p-dinitrobenzene, m-dinitrobenzene, o-dinitrobenzene, 1,4-naphthoquinone, 2,3-dichloronaphthoquinone, 1,3-dinitronaphthalene, 1,5-dinitronaphthalene, 9,10-anthraquinone, 1,3,6,8-tetranitrocarbazole, 2,4,7-trinitro-9- Luenone, 2,3,5,6-tetracyanopyridine or fullerene C60 is preferred, and hexacyanobutadiene, hexacyanobenzene, tetracyanoethylene, tetracyanoquinodimethane, tetrafluorotetracyanoquinodimethane, p-fluoranyl, p- Chloranil, p-bromanyl, 2,6-dichlorobenzoquinone, 2,5-dichlorobenzoquinone, 2,3-dichloronaphthoquinone, 1,2,4,5-tetracyanobenzene, 2,3-dichloro-5,6-dicyano Benzoquinone or 2,3,5,6-tetracyanopyridine is more preferred, and tetrafluorotetracyanoquinodimethane is particularly preferred.

These electron-accepting dopants may be used alone or in combination of two or more.
Although the usage-amount of an electron-accepting dopant changes with kinds of material, it is preferable that it is 0.01 mass%-50 mass% with respect to hole transport layer material, and it is 0.05 mass%-20 mass%. It is further more preferable and it is especially preferable that it is 0.1 mass%-10 mass%. When the amount used is less than 0.01% by mass with respect to the hole transporting material, the effect of the present invention is insufficient because it is insufficient, and when it exceeds 50% by mass, the hole transporting ability is impaired. .

  Specific examples of materials for the hole injection layer and the hole transport layer include pyrrole derivatives, carbazole derivatives, azacarbazole derivatives, pyrazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, thiophene derivatives, poly Arylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds A layer containing an aromatic dimethylidin compound, a porphyrin compound, an organic silane derivative, carbon, or the like is preferable.

The thicknesses of the hole injection layer and the hole transport layer are not particularly limited, but the thickness is preferably 1 nm to 5 μm from the viewpoint of driving voltage reduction, external quantum efficiency improvement, and durability improvement. The thickness is further preferably 5 nm to 1 μm, and particularly preferably 10 nm to 500 nm.
The hole injection layer and the hole transport layer may have a single-layer structure composed of one or more of the materials described above, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions. .

The carrier mobility in the hole transport layer is generally 10 ⁻⁷ cm ² · V ⁻¹ · s ⁻¹ or more and 10 ⁻¹ cm ² · V ⁻¹ · s ⁻¹ or less. From the point of quantum efficiency, 10 ⁻⁵ cm ² · V ⁻¹ · s ⁻¹ or more and preferably 10 ⁻¹ cm ² · V ⁻¹ · s ⁻¹ or less are preferable, and 10 ⁻⁴ cm ² · V ⁻¹ · s ⁻¹ or more. ^{10 -1 cm 2 · V -1 ·} s -1 more preferably ^less, particularly preferably ^{10 -3 cm 2 · V -1 ·} s -1 or ^{10 -1 cm 2 · V -1 ·} s -1 or less.
As the carrier mobility, a value measured by a method similar to the method for measuring the carrier mobility of the light emitting layer is adopted.
In addition, the carrier mobility of the hole transport layer is preferably larger than the carrier mobility of the light emitting layer from the viewpoint of driving durability and external quantum efficiency.

(Electron injection layer, electron transport layer)
The electron injection layer and the electron transport layer are layers having any one of a function of injecting electrons from the cathode, a function of transporting electrons, and a function of blocking holes that can be injected from the anode.

The electron donating dopant introduced into the electron injecting layer or the electron transporting layer only needs to have an electron donating property and a property of reducing an organic compound, such as an alkali metal such as Li or an alkaline earth metal such as Mg. Transition metals including rare earth metals and reducing organic compounds are preferably used.
As the metal, a metal having a work function of 4.2 eV or less can be preferably used. Specifically, Li, Na, K, Be, Mg, Ca, Sr, Ba, Y, Cs, La, Sm, Gd , And Yb. Examples of the reducing organic compound include a nitrogen-containing compound, a chalcogen element compound (such as a sulfur-containing compound, a selenium compound, or a tellurium-containing compound), a phosphorus-containing compound, and the like. In addition, materials described in JP-A-6-212153, JP-A-2000-196140, 2003-68468, 2003-229278, 2004-342614, and the like can be used.

  These electron donating dopants may be used alone or in combination of two or more. The amount of the electron donating dopant varies depending on the type of material, but is preferably 0.1% by mass to 99% by mass, and 1.0% by mass to 80% by mass with respect to the electron transport layer material. Is more preferable, and 2.0 mass% to 70 mass% is particularly preferable. When the amount used is less than 0.1% by mass with respect to the electron transport layer material, the effect of the present invention is insufficient because it is insufficient, and when it exceeds 99% by mass, the electron transport ability is impaired.

  Specific examples of the material for the electron injection layer and the electron transport layer include pyridine, pyrimidine, triazine, imidazole, triazole, oxazole, oxadiazol, fluorenone, anthraquinodimethane, anthrone, diphenylquinone, thiol. Heterocyclic tetracarboxylic anhydrides such as pyran dioxide, carbodiimide, fluorenylidenemethane, distyrylpyrazine, fluorine-substituted aromatic compounds, naphthaleneperylene, phthalocyanines, siloles, and their derivatives (forms condensed rings with other rings) Or metal complexes of 8-quinolinol derivatives, metal phthalocyanines, various metal complexes typified by metal complexes having benzoxazole or benzothiazole as a ligand, and the like.

The thicknesses of the electron injecting layer and the electron transporting layer are not particularly limited, but the thickness is preferably 1 nm to 5 μm from the viewpoint of lowering driving voltage, improving luminous efficiency, and improving durability. It is more preferably 1 μm, and particularly preferably 10 nm to 500 nm.
The electron injection layer and the electron transport layer may have a single layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.

As the Ea (ETL), a value measured by the same method as the Ea measuring method described later is used.
In addition, the carrier mobility in the electron transport layer is generally 10 ⁻⁷ cm ² · V ⁻¹ · s ⁻¹ or more and 10 ⁻¹ cm ² · V ⁻¹ · s ⁻¹ or less. 10 ⁻⁵ cm ² · V ⁻¹ · s ⁻¹ or more and 10 ⁻¹ cm ² · V ⁻¹ · s ⁻¹ or less is preferable, and 10 ⁻⁴ cm ² · V ⁻¹ · s ⁻¹ or more 10 ^{− 1} cm ² · V ⁻¹ · s ⁻¹ or less is more preferable, and 10 ⁻³ cm ² · V ⁻¹ · s ⁻¹ or more and 10 ⁻¹ cm ² · V ⁻¹ · s ⁻¹ or less are particularly preferable.

(Hole blocking layer)
The hole blocking layer is a layer having a function of preventing holes transported from the anode side to the light emitting layer from passing through to the cathode side. In the present invention, a hole blocking layer can be provided as an organic compound layer adjacent to the light emitting layer on the cathode side.
Although the hole blocking layer is not particularly limited, specifically, it may contain an aluminum complex such as BAlq, a triazole derivative, a triazine derivative, a pyridine derivative, a quinoline derivative, a phenanthroline derivative, and a pyrazaball derivative. it can.
In addition, the thickness of the hole blocking layer is generally preferably 50 nm or less, preferably 1 nm to 50 nm, and more preferably 5 nm to 40 nm in order to lower the driving voltage.

(anode)
The anode usually has a function as an electrode for supplying holes to the organic compound layer, and there is no particular limitation on the shape, structure, size, etc., depending on the use and purpose of the light-emitting element. , Can be appropriately selected from known electrode materials. As described above, the anode is usually provided as a transparent anode.

  As a material of the anode, for example, a metal, an alloy, a metal oxide, a conductive compound, or a mixture thereof can be suitably cited, and a material having a work function of 4.0 eV or more is preferable. Specific examples of the anode material include conductive metals such as tin oxide doped with antimony and fluorine (ATO, FTO), tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO). Metals such as oxides, gold, silver, chromium, nickel, and mixtures or laminates of these metals and conductive metal oxides, inorganic conductive materials such as copper iodide and copper sulfide, polyaniline, polythiophene, polypyrrole, etc. Organic conductive materials, and a laminate of these and ITO. Among these, conductive metal oxides are preferable, and ITO is particularly preferable from the viewpoints of productivity, high conductivity, transparency, and the like.

  The anode is composed of, for example, a wet method such as a printing method and a coating method, a physical method such as a vacuum deposition method, a sputtering method, and an ion plating method, and a chemical method such as a CVD and a plasma CVD method. It can be formed on the substrate according to a method appropriately selected in consideration of suitability with the material to be processed. For example, when ITO is selected as the anode material, the anode can be formed according to a direct current or high frequency sputtering method, a vacuum deposition method, an ion plating method, or the like.

  In the organic electroluminescent element of the present invention, the formation position of the anode is not particularly limited and can be appropriately selected according to the use and purpose of the light emitting element. The anode may be formed on the entire one surface of the substrate, or may be formed on a part thereof.

  The patterning for forming the anode may be performed by chemical etching such as photolithography, or may be performed by physical etching such as laser, or vacuum deposition or sputtering with a mask overlapped. It may be performed by a lift-off method or a printing method.

  The thickness of the anode can be appropriately selected depending on the material constituting the anode and cannot be generally defined, but is usually about 10 nm to 50 μm, and preferably 50 nm to 20 μm.

The resistance value of the anode is preferably 10 ³ Ω / □ or less, and more preferably 10 ² Ω / □ or less. When the anode is transparent, it may be colorless and transparent or colored and transparent. In order to take out light emission from the transparent anode side, the transmittance is preferably 60% or more, and more preferably 70% or more.

  The transparent anode is described in detail in the book “New Development of Transparent Electrode Films” published by CMC (1999), supervised by Yutaka Sawada, and the matters described here can be applied to the present invention. In the case of using a plastic substrate having low heat resistance, a transparent anode formed using ITO or IZO at a low temperature of 150 ° C. or lower is preferable.

(cathode)
The cathode usually has a function as an electrode for injecting electrons into the organic compound layer, and there is no particular limitation on the shape, structure, size, etc., depending on the use and purpose of the light-emitting element, It can select suitably from well-known electrode materials.

  Examples of the material constituting the cathode include metals, alloys, metal oxides, electrically conductive compounds, and mixtures thereof, and those having a work function of 4.5 eV or less are preferable. Specific examples include alkali metals (for example, Li, Na, K, or Cs), alkaline earth metals (for example, Mg, Ca, etc.), gold, silver, lead, aluminum, sodium-potassium alloys, lithium-aluminum alloys, And a rare earth metal such as magnesium-silver alloy, indium, and ytterbium. These may be used alone, but two or more can be suitably used in combination from the viewpoint of achieving both stability and electron injection.

Among these, as a material constituting the cathode, an alkali metal or an alkaline earth metal is preferable from the viewpoint of electron injecting property, and a material mainly composed of aluminum is preferable from the viewpoint of excellent storage stability.
The material mainly composed of aluminum is aluminum alone, an alloy of aluminum and 0.01% by mass to 10% by mass of alkali metal or alkaline earth metal, or a mixture thereof (for example, lithium-aluminum alloy, magnesium-aluminum alloy). Etc.).

  The materials for the cathode are described in detail in JP-A-2-15595 and JP-A-5-121172, and the materials described in these public relations can also be applied in the present invention.

There is no restriction | limiting in particular about the formation method of a cathode, According to a well-known method, it can carry out.
For example, the cathode described above is configured from a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method, or an ion plating method, or a chemical method such as CVD or plasma CVD method. It can be formed according to a method appropriately selected in consideration of suitability with the material. For example, when a metal or the like is selected as the cathode material, one or more of them can be simultaneously or sequentially performed according to a sputtering method or the like.

  Patterning when forming the cathode may be performed by chemical etching such as photolithography, physical etching by laser, or the like, or by vacuum deposition or sputtering with the mask overlaid. It may be performed by a lift-off method or a printing method.

In the present invention, the cathode formation position is not particularly limited, and may be formed on the entire organic compound layer or a part thereof.
Further, a dielectric layer made of an alkali metal or alkaline earth metal fluoride or oxide may be inserted between the cathode and the organic compound layer with a thickness of 0.1 nm to 5 nm. This dielectric layer can also be regarded as a kind of electron injection layer. The dielectric layer can be formed by, for example, a vacuum deposition method, a sputtering method, an ion plating method, or the like.

The thickness of the cathode can be appropriately selected depending on the material constituting the cathode and cannot be generally defined, but is usually about 10 nm to 5 μm, and preferably 50 nm to 1 μm.
Further, the cathode may be transparent or opaque. The transparent cathode can be formed by depositing a thin cathode material to a thickness of 1 nm to 10 nm and further laminating a transparent conductive material such as ITO or IZO.

(substrate)
In the present invention, a substrate can be used. The substrate used is preferably a substrate that does not scatter or attenuate light emitted from the organic compound layer. Specific examples include zirconia-stabilized yttrium (YSZ), inorganic materials such as glass, polyesters such as polyethylene terephthalate, polybutylene phthalate, and polyethylene naphthalate, polystyrene, polycarbonate, polyethersulfone, polyarylate, polyimide, and polycycloolefin. , Norbornene resins, and organic materials such as poly (chlorotrifluoroethylene).
For example, when glass is used as the substrate, alkali-free glass is preferably used as the material in order to reduce ions eluted from the glass. Moreover, when using soda-lime glass, it is preferable to use what gave barrier coatings, such as a silica. In the case of an organic material, it is preferable that it is excellent in heat resistance, dimensional stability, solvent resistance, electrical insulation, and workability.

  There is no restriction | limiting in particular about the shape of a board | substrate, a structure, a magnitude | size, It can select suitably according to the use, purpose, etc. of a light emitting element. In general, the shape of the substrate is preferably a plate shape. The structure of the substrate may be a single layer structure, a laminated structure, may be formed of a single member, or may be formed of two or more members.

  The substrate may be colorless and transparent or colored and transparent, but is preferably colorless and transparent in that it does not scatter or attenuate light emitted from the organic light emitting layer.

The substrate can be provided with a moisture permeation preventing layer (gas barrier layer) on the front surface or the back surface.
As a material for the moisture permeation preventive layer (gas barrier layer), inorganic materials such as silicon nitride and silicon oxide are preferably used. The moisture permeation preventing layer (gas barrier layer) can be formed by, for example, a high frequency sputtering method.
When a thermoplastic substrate is used, a hard coat layer, an undercoat layer, or the like may be further provided as necessary.

(Protective layer)
In the present invention, the entire organic EL element may be protected by a protective layer.
As a material contained in the protective layer, any material may be used as long as it has a function of preventing materials that promote device deterioration such as moisture and oxygen from entering the device.
Specific examples thereof include metals such as In, Sn, Pb, Au, Cu, Ag, Al, Ti, and Ni, MgO, SiO, SiO ₂ , Al ₂ O ₃ , GeO, NiO, CaO, BaO, and Fe _2. Metal oxide such as O ₃ , Y ₂ O ₃ , or TiO ₂ , metal nitride such as SiN _x , SiN _x O _y , metal fluoride such as MgF ₂ , LiF, AlF ₃ , or CaF ₂ , polyethylene, polypropylene Polymethyl methacrylate, polyimide, polyurea, polytetrafluoroethylene, polychlorotrifluoroethylene, polydichlorodifluoroethylene, a copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene, tetrafluoroethylene and at least one comonomer. Copolymer obtained by copolymerizing monomer mixture containing And a fluorine-containing copolymer having a cyclic structure in the copolymer main chain, a water-absorbing substance having a water absorption of 1% or more, and a moisture-proof substance having a water absorption of 0.1% or less.

  The method for forming the protective layer is not particularly limited, and for example, vacuum deposition, sputtering, reactive sputtering, MBE (molecular beam epitaxy), cluster ion beam, ion plating, plasma polymerization (high frequency) Excited ion plating method), plasma CVD method, laser CVD method, thermal CVD method, gas source CVD method, coating method, printing method, or transfer method can be applied.

(Sealing)
Furthermore, the organic EL device of the present invention may be sealed using a sealing container.
Further, a moisture absorbent or an inert liquid may be sealed in a space between the sealing container and the light emitting element.
Although it does not specifically limit as a moisture absorber, For example, barium oxide, sodium oxide, potassium oxide, calcium oxide, sodium sulfate, calcium sulfate, magnesium sulfate, phosphorus pentoxide, calcium chloride, magnesium chloride, copper chloride Cesium fluoride, niobium fluoride, calcium bromide, vanadium bromide, molecular sieve, zeolite, magnesium oxide, and the like. The inert liquid is not particularly limited, and examples thereof include fluorinated solvents such as paraffins, liquid paraffins, perfluoroalkanes, perfluoroamines, perfluoroethers, chlorinated solvents, and silicone oils. It is done.

3. Driving The organic EL device of the present invention emits light by applying a direct current (which may include an alternating current component if necessary) voltage (usually 2 to 15 volts) or a direct current between the anode and the cathode. Obtainable.
The driving durability of the organic EL element in the present invention can be measured by the time required to decrease to a certain luminance at a specific luminance. For example, KEITHLEY Seiso - Sumeja - using Unit 2400, a DC voltage was applied to the organic EL element to emit light, 1500 cd / ^{m 2} if green emission the initial luminance, blue 360 cd / ^{m 2} if the emission of A continuous driving test is performed under the conditions, and the time when the luminance becomes 80% of the initial luminance is set as the luminance decreasing time, and the luminance decreasing time can be obtained by comparing with the conventional light emitting element. This numerical value was used in the present invention.
An important characteristic value of the organic EL element is external quantum efficiency. The external quantum efficiency is calculated by “external quantum efficiency φ = number of photons emitted from the device / number of electrons injected into the device”, and it can be said that the larger this value, the more advantageous the device in terms of power consumption.

  The external quantum efficiency of the organic EL element is determined by “external quantum efficiency φ = internal quantum efficiency × light extraction efficiency”. In an organic EL device using fluorescence emission from an organic compound, the limit value of the internal quantum efficiency is 25%, and the light extraction efficiency is approximately 20%. Therefore, the limit value of the external quantum efficiency is approximately 5%. Has been.

Figures external quantum efficiency, the maximum value of the external quantum efficiency when the device is driven at 20 ° C., or, 20 ² near (preferably 100cd ^{/ m} 2 ~2000cd ^/ m when the device is driven at ° C., green emission if 1500 cd / ^{m 2,} it is possible to use the value of the external quantum efficiency at 360 cd / ^{m 2)} as long as light emission of blue.
In the present invention, using a source measure unit 2400 type manufactured by Toyo Technica, a DC constant voltage is applied to an EL element to emit light, and the amount of light is measured using a luminance meter SR-3 manufactured by Topcon Corporation. A value obtained by calculating the external quantum efficiency is used.

  Further, the external quantum efficiency of the light emitting element can be calculated from the result and the relative luminous efficiency curve obtained by measuring the light emission luminance, the light emission spectrum, and the current density. That is, the number of input electrons can be calculated using the current density value. The emission luminance can be converted into the number of photons emitted by integral calculation using the emission spectrum and the relative visibility curve (spectrum). From these, the external quantum efficiency (%) can be calculated by “(number of emitted photons / number of electrons input to the device) × 100”.

  Regarding the driving method of the organic EL device of the present invention, each of JP-A-2-148687, JP-A-6-301355, JP-A-5-290080, JP-A-7-134558, JP-A-8-234658, and JP-A-8-2441047. The driving methods described in the publications, Japanese Patent No. 2784615, US Pat. Nos. 5,828,429 and 6023308, and the like can be applied.

4). Applications Applications of the organic EL device of the present invention are not particularly limited, but can be applied to a wide range of fields such as mobile phone displays, personal digital assistants (PDAs), computer displays, automobile information displays, TV monitors, or general lighting.

  Examples of the organic EL device of the present invention will be described below, but the present invention is not limited to these examples.

Example 1
1. Production of organic EL element (production of comparative element 1)
A 0.5 mm thick, 2.5 cm square ITO glass substrate (manufactured by Geomat Co., Ltd., surface resistance 10 Ω / □) is placed in a cleaning container, subjected to ultrasonic cleaning in 2-propanol, and then subjected to UV-ozone treatment for 30 minutes. went. The following layers were deposited on this transparent anode by vacuum deposition. The vapor deposition rate in the examples of the present invention is 0.2 nm / second unless otherwise specified. The deposition rate was measured using a quartz resonator. The film thicknesses described below were also measured using a crystal resonator.

-Hole injection layer-
F4-TCNQ was doped by 0.3% by mass with respect to 2-TNATA, and deposited to a thickness of 160 nm.
-Hole transport layer-
Α-NPD was deposited on the hole injection layer. The film thickness was 10 nm.
-Hole transport intermediate layer-
On the hole transport layer, Compound A was deposited to a thickness of 3 nm.

-Light emitting layer-
A vapor deposition layer having a thickness of 60 nm containing 15% of mCP in a molar ratio of the host material mCP and the light emitting material compound B was formed.
The hole mobility of the light emitting layer was 1.2 × 10 ⁻³ cm ² · V ⁻¹ · sec ⁻¹ .

-Electron transport layer-
Balq was deposited to a thickness of 40 nm on the light emitting layer.
-Electron injection layer-
Lithium fluoride was evaporated to 0.5 nm.
-Cathode-
A patterned mask (a mask having a light emitting area of 2 mm × 2 mm) was placed thereon, and metal aluminum was deposited to a thickness of 100 nm to form a cathode.

  The produced laminate was put in a glove box substituted with argon gas, and sealed with a stainless steel sealing can and an ultraviolet curable adhesive (XNR5516HV, manufactured by Nagase Ciba Co., Ltd.).

(Production of other comparative elements)
Comparative element 2: The light emitting layer of comparative element 1 was divided into two parts of 30 nm, and the host material of the first light emitting layer on the anode side was mixed with 20% by mass of the total amount of the second host compound A with respect to the first host mCP. The host material was changed. The hole mobility of the second light emitting layer on the cathode side is 1.2 × 10 ⁻³ cm ² · V ⁻¹ · sec ⁻¹ , and the hole mobility of the first light emitting layer is 2.5 × 10 ⁻⁵ cm ^2. V ⁻¹ · sec ⁻¹ , compared with the second light emitting layer, the hole mobility of the first light emitting layer was about 2/100.

  Comparative element 3: Host material having the light-emitting layer of comparative element 1 divided into two parts of 30 nm, the host material of the second light-emitting layer on the cathode side being mixed with 20 mass% of the total host amount of compound A using mCP and the second host Changed to The hole mobility of the second light emitting layer is about 2/100 as compared with the first light emitting layer on the anode side using mCP alone as a host material.

Comparative element 4: The light emitting layer of comparative element 1 was divided into three parts with the same total thickness, and each was formed as a first light emitting layer, a second light emitting layer, and a third light emitting layer of 20 nm. The first light-emitting layer and the third light-emitting layer have the same composition ratio as the light-emitting layer of the comparative element 1 and a thickness of 20 nm. The composition of the host material of each light emitting layer and the mixing ratio with respect to the light emitting material were changed as shown below.
First light emitting layer: a 20 nm-thick deposited layer containing the first host material mCP, the second host material compound A at 20% by mass of the total host material, and the light emitting material compound B at a molar ratio of 15% of the total host material is formed. did.
Second light emitting layer: A deposited layer having a thickness of 20 nm containing 15% of the host material mCP and the light emitting material compound B in a molar ratio of the entire host material was formed.
Third light emitting layer: A deposited layer having the same composition as the first light emitting layer and a thickness of 20 nm was formed.

The hole mobility of the first light emitting layer and the third light emitting layer in the comparative element 4 is 2.5 × 10 ⁻⁵ cm ² · V ⁻¹ · sec ⁻¹ , and the hole mobility of the second light emitting layer is 1. It was 2 × 10 ⁻³ cm ² · V ⁻¹ · sec ⁻¹ . That is, the hole mobility of the second light emitting layer is about 50 times larger than the hole mobility of the first light emitting layer and the third light emitting layer.

(Preparation of the device of the present invention)
The light emitting layer of the comparative element 1 was divided into three parts having the same total thickness, and a 20 nm first light emitting layer, a second light emitting layer, and a third light emitting layer were obtained. The first light-emitting layer and the third light-emitting layer have the same composition ratio as the light-emitting layer of the comparative element 1 and a thickness of 20 nm. The composition of the host material of the second light emitting layer and the mixing ratio with respect to the light emitting material were changed as shown below and in Table 1.

Invention element 1: 20 nm thickness of the first host material mCP, the second host material compound A as the second light emitting layer, 20% by mass of the total host material, and 15% of the total host material as the light emitting material compound B in a molar ratio of 20 nm The deposited layer was formed.
The hole mobility (μ1) of the first light-emitting layer on the anode side is 1.2 × 10 ⁻³ cm ² · V ⁻¹ · sec ⁻¹ , and the hole mobility (μ2) of the intermediate second light-emitting layer is 2. The hole mobility (μ3) of 5 × 10 ⁻⁵ cm ² · V ⁻¹ · sec ⁻¹ and the third light emitting layer on the cathode side is 1.2 × 10 ⁻³ cm ² · V ⁻¹ · sec ^−1. ,Met. That is, μ2 / μ1 = 0.021 and μ2 / μ3 = 0.021.
Other devices of the present invention: Similarly, μ1, μ2 and μ3 of each device were measured, and the obtained values of μ2 / μ1 are shown in Table 1. The μ2 / μ3 value is the same as μ2 / μ1.

  The hole mobility of the host material is shown in Table 1. In each of the elements of the present invention, the hole mobility of the host material of the second light emitting layer is smaller than the hole mobility of the host material of the first light emitting layer and the third light emitting layer.

  The structure of the compound used for the light-emitting element is shown below.

2. Performance evaluation (evaluation items)
(1) Luminous efficiency The external quantum efficiency of the light-emitting element was calculated from the results and relative luminous efficiency curve obtained by measuring the light emission luminance, light emission spectrum, and current density. The external quantum efficiency (%) was calculated by “(number of photons emitted / number of electrons input to the device) × 100”.
(2) Driving voltage The driving voltage at an illuminance of 360 cd / m ² was measured.
(3) Driving durability A continuous driving test was performed under the condition of initial luminance of 360 cd / m ² , and the time when the luminance was reduced by half was determined as the durability time.

(Evaluation results)
The obtained results are shown in Table 2.
The device of the present invention has higher external quantum efficiency than the comparative device, and in particular, the driving durability can be extended.
Among them, the element of the present invention 2 was excellent in driving durability.
As described above, the first light emitting layer, the second light emitting layer, and the third light emitting layer each independently contain the first host material having substantially the same hole mobility, and further, the second light emitting layer. In the light emitting device characterized in that it contains a second host material having a small Ip compared to the ionization potential (Ip) of the first host material, the external quantum efficiency is high and the driving durability is excellent. Yes.

Example 2
1. Production of Organic EL Element In the element 1 of the present invention of Example 1, the compositions of the first light emitting layer, the second light emitting layer, and the third light emitting layer were changed to the compositions shown below, and the present elements 11 and 12 were Produced.

1) Invention element 11
First light emitting layer: A deposited layer having a thickness of 20 nm containing 15% of the host material in a molar ratio of the host material mCP and the light emitting material compound B was formed.
Second light emitting layer: A deposited layer having a thickness of 20 nm containing 15% of the host material in a molar ratio of the host material compound F and the light emitting material compound B was formed.
Third light emitting layer: A vapor deposition layer having a thickness of 20 nm containing 15% of the host material in a molar ratio of the host material mCP and the light emitting material compound B was formed.

In the element 11 of the present invention, the hole mobility (μ1) of the first light emitting layer is 1.2 × 10 ⁻³ cm ² · V ⁻¹ · sec ⁻¹ , and the hole mobility (μ2) of the second light emitting layer is The hole mobility (μ3) of the third light emitting layer on the cathode side is 1.2 × 10 ⁻³ cm ² · V ⁻¹ · sec ⁻¹ and 3.8 × 10 ⁻⁶ cm ² · V ⁻¹ · sec ⁻¹ . ⁻¹ . That is, μ2 / μ1 = 0.0032 and μ2 / μ3 = 0.002.
As for the hole mobility of the host material, mCP is 3.5 × 10 ⁻³ cm ² · V ⁻¹ · sec ^−1, whereas Compound F is 8.8 × 10 ⁻⁶ cm ² · V ⁻¹ · sec ^−1. Met. That is, the hole mobility of Compound F was as low as about 1/400 of mCP.

2) Invention element 12
First light emitting layer: A deposited layer having a thickness of 20 nm containing 15% of the host material in a molar ratio of the host material mCP and the light emitting material compound B was formed.
Second light emitting layer: A deposited layer having a thickness of 20 nm containing 15% of the host material in a molar ratio of the host material compound D and the light emitting material compound B was formed.
Third light emitting layer: A vapor deposition layer having a thickness of 20 nm containing 15% of the host material in a molar ratio of the host material mCP and the light emitting material compound B was formed.

In the element 12 of the present invention, the hole mobility (μ1) of the first light emitting layer is 1.2 × 10 ⁻³ cm ² · V ⁻¹ · sec ⁻¹ , and the hole mobility (μ2) of the second light emitting layer is 1.1 × 10 ⁻⁶ cm ² · V ⁻¹ · sec ⁻¹ , and the hole mobility (μ3) of the third light emitting layer on the cathode side is 1.2 × 10 ⁻³ cm ² · V ⁻¹ · sec ⁻¹ . That is, μ2 / μ1 = 0.0009 and μ2 / μ3 = 0.0009.
The hole mobility of the host material was 2.3 × 10 ⁻⁶ cm ² · V ⁻¹ · sec ⁻¹ for Compound D. That is, the hole mobility of Compound D was as low as about 1/1500 of mCP.

3) Comparison element 5
In the comparative element 1, only the light emitting layer was changed to the following, and the others were the same as the comparative element 1.
Light emitting layer: A vapor deposited layer having a thickness of 60 nm containing 15% of the host material mCP and the light emitting material compound B in a molar ratio was formed.

  The structure of the compound used for the light-emitting element is shown below.

2. Performance Evaluation The results evaluated in the same manner as in Example 1 are shown in Table 3.
The device of the present invention had higher external quantum efficiency and lower drive voltage than the device of the comparative example, and in particular, the drive durability could be extended.

It is a conceptual diagram of the layer structure of the comparative light emitting element. It is a conceptual diagram of an example of the light emitting element of this invention, and is the structure by which the light emitting layer was divided | segmented into the three unit light emitting layers.

Explanation of symbols

1: Anode 2: Hole injection layer 3: Hole transport layer 4: Light emitting layer 4a, 4b, 4c: Unit light emitting layer 5: Electron transport layer 6: Electron injection layer 7: Cathode

Claims (11)

An organic electroluminescent device comprising at least a light emitting layer sandwiched between a pair of electrodes, wherein the light emitting layer is divided into at least three layers in the thickness direction, a first light emitting layer close to the anode and a third light emission close to the cathode And a second light-emitting layer located between the first light-emitting layer and the third light-emitting layer, and the first to third light-emitting layers have a carbazole group in the molecule as a host material. A second light emitting material that includes a compound and includes at least one selected from the following D-21 to D-24 as a light emitting material, as compared with hole mobility in the first light emitting layer and the third light emitting layer. An organic light emitting device characterized by low hole mobility in a layer.
The hole mobility (μ1) in the first light-emitting layer, the hole mobility (μ2) in the second light-emitting layer, and the hole mobility (μ3) in the third light-emitting layer satisfy the following formulas: The organic light-emitting device according to claim 1.
1 × 10 ⁻⁴ ≦ μ2 / μ1 ≦ 1 × 10 ⁻¹ (Formula 1)
1 × 10 ⁻⁴ ≦ μ2 / μ3 ≦ 1 × 10 ⁻¹ (Formula 2) The hole mobility (μ2) in the second light emitting layer is 1 × 10 ⁻⁷ cm ² · V ⁻¹ · sec ⁻¹ or more and 1 × 10 ⁻⁴ cm ² · V ⁻¹ · sec ⁻¹ or less. The organic light-emitting device according to claim 1 or 2, characterized in that The first light emitting layer, the second light emitting layer, and the third light emitting layer each independently contain a first light emitting material and a first host material,
1) The hole mobility of the first host material of the first light emitting layer, the second light emitting layer, and the third light emitting layer is substantially equal, and
2) contains the second light-emitting layer further second host material, claims 1 to 3, the hole mobility of the second host material is smaller than a hole mobility than the first host material The organic light emitting element of any one of these . The organic light emitting device according to claim 4 , wherein the first host material contained in the first light emitting layer, the second light emitting layer, and the third light emitting layer is the same compound. The first light emitting layer and the third light emitting layer contain a first light emitting material and a first host material, respectively, and the first host material of the first light emitting layer and the third light emitting layer has its hole mobility. Are substantially the same, the second light emitting layer contains the first light emitting material and the second host material, and the second host material has a smaller hole mobility than the first host material. The organic light-emitting device according to claim 1 , wherein the organic light-emitting device is an organic light-emitting device. The organic light emitting device according to claim 6 , wherein the first host material contained in the first light emitting layer and the third light emitting layer is the same compound. The hole mobility M2 of the second host material is 1 × 10 ⁻⁷ cm ² · V ⁻¹ · sec ⁻¹ or more and 1 × 10 ⁻⁴ cm ² · V ⁻¹ · sec ⁻¹ or less. The organic light emitting element according to any one of claims 5 to 7 . The ionization potential (Ip) of the second host material is smaller than the ionization potential (Ip) of the first host material, according to any one of claims 5 to 8. Organic light emitting device. 10. The organic light emitting device according to claim 9 , wherein a difference (ΔIp) between Ip of the first host material and Ip of the second host material is 0.2 eV or more and 1.0 eV or less. The following equations are satisfied, where the hole mobilities of the host materials contained in the first light emitting layer, the second light emitting layer, and the third light emitting layer are M1, M2, and M3, respectively. The organic light-emitting device according to any one of claims 5 to 10 .
1 × 10 ⁻⁴ ≦ M2 / M1 ≦ 1 × 10 ⁻¹ (Formula 3)
1 × 10 ⁻⁴ ≦ M2 / M3 ≦ 1 × 10 ⁻¹ (Formula 4)