JP2010272841A - Package for mounting electronic component and electronic device using the same - Google Patents

Package for mounting electronic component and electronic device using the same Download PDF

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Publication number
JP2010272841A
JP2010272841A JP2010013206A JP2010013206A JP2010272841A JP 2010272841 A JP2010272841 A JP 2010272841A JP 2010013206 A JP2010013206 A JP 2010013206A JP 2010013206 A JP2010013206 A JP 2010013206A JP 2010272841 A JP2010272841 A JP 2010272841A
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Prior art keywords
diameter portion
electronic component
signal terminal
sealing material
hole
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JP5312358B2 (en
Inventor
Masahiko Taniguchi
雅彦 谷口
Sadakatsu Yoshida
定功 吉田
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for mounting an electronic component that has no occurrence of poor hermeticity even if a through hole for fixing a signal terminal is enlarged to increase the characteristic impedance, and also to provide an electronic device using the same. <P>SOLUTION: The package for mounting an electronic component includes a substrate 1 and signal terminals 4. The substrate 1 has a cover joining portion 1b in an outer peripheral region of the top face, a portion 1a for mounting an electronic component 5, and a plurality of through holes 2, 2 that pass through the substrate 1 from the top to bottom faces in a region on the inner side of the outer peripheral region. The signal terminals 4 are fixed through a sealing material 3 filled in the through holes 2. The through holes 2 each have a large diameter portion 2a and a small diameter portion 2b, and the signal terminals 4 are fixed through the sealing material 3 filled in the larger diameter portions 2a. The through holes 2 each have the large diameter portion 2a on the bottom face side of the substrate 1 and the small diameter portion 2b on the top face side of the substrate 1, and the sealing material 3 is filled in the large diameter portion 2a of each through hole 2 with a space to a step surface 2c on the small diameter portion 2b side. By setting the sealing material 3 apart from the cover joining portion 1b, a poor hermeticity is suppressed and at the same time impedance matching can be achieved. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、光通信分野等に用いられる光半導体素子等の電子部品を収納するための電子部品搭載用パッケージおよびそれを用いた電子装置に関する。   The present invention relates to an electronic component mounting package for storing an electronic component such as an optical semiconductor element used in the field of optical communication and the like, and an electronic apparatus using the same.

近年、40km以下の伝送距離における高速通信に対する需要が急激に増加しており、高速大容量の情報伝送に関する研究開発が進められている。とりわけ、光通信装置を用いて光信号を受発信する半導体装置等の電子装置の高速化が注目されており、電子装置による光信号の高出力化および高速化が伝送容量を向上させるための課題として研究開発されている。   In recent years, the demand for high-speed communication at a transmission distance of 40 km or less has increased rapidly, and research and development on high-speed and large-capacity information transmission has been promoted. In particular, attention has been paid to increasing the speed of electronic devices such as semiconductor devices that receive and transmit optical signals using optical communication devices, and the issue of increasing the output and speed of optical signals by electronic devices to improve transmission capacity. As research and development.

従来の半導体装置に代表される電子装置の光出力は0.2〜0.5mW程度であり、電子部品として用いられる半導体素子の駆動電力は5mW程度であった。しかし、より大出力の半導体装置では、光出力が1mWのレベルになってきており、また、半導体素子の駆動電力も10mW以上が要求されている。さらに、従来の半導体装置による伝送速度は2.5〜10G
bps(Giga bit per second)程度であったが、近年では25〜40Gbps程度まで向上
してきており、半導体装置をより高出力化させ、高速化させることが要求されている。
The optical output of an electronic device typified by a conventional semiconductor device is about 0.2 to 0.5 mW, and the driving power of a semiconductor element used as an electronic component is about 5 mW. However, in a semiconductor device having a higher output, the optical output has become a level of 1 mW, and the driving power of the semiconductor element is required to be 10 mW or more. Furthermore, the transmission speed by the conventional semiconductor device is 2.5-10G.
Although it was about bps (Giga bit per second), in recent years, it has been improved to about 25 to 40 Gbps, and there is a demand for higher output and higher speed of semiconductor devices.

従来の光通信装置に用いられているLD(Laser Diode:レーザダイオード)やPD(Photo Diode:フォトダイオ−ド)等の光半導体素子を含む電子部品を搭載する電子部品搭載用パッケージの例を図10に断面図で示す。   The figure of the example of the package for electronic component mounting which mounts the electronic components containing optical semiconductor elements, such as LD (Laser Diode: Laser diode) and PD (Photo Diode: Photodiode) which are used for the conventional optical communication apparatus. 10 shows a cross-sectional view.

図10に示す従来の電子部品搭載用パッケージは、上面に電子部品25の搭載部21aを有する鉄(Fe)−ニッケル(Ni)−コバルト(Co)合金や鉄(Fe)−マンガン(Mn)合金等の金属から成る円板状の基体21と、基体21の上面から下面に形成された直径が0.5〜2mmの貫通孔22の中心部に挿通されるとともに、少なくとも下端部が貫通孔22から
突出するように封止材23を介して固定された信号端子24とを具備しているものであった。信号端子24の固定はホウケイ酸等を主成分とする絶縁ガラスから成る封止材23を介して行なわれ、封止材23によって基体21と信号端子24とが電気的に絶縁されている。また、基体21の下面には、2つの貫通孔22・22の間に接地端子28が接続されている。この電子部品搭載用パッケージの搭載部21aに必要に応じて回路基板25aを介して電子部品25を搭載し、電子部品搭載用パッケージの信号端子24の上端部と電子部品25の端子とを回路基板25aを介して電気的に接続し、基体21の上面の外周領域に、電子部品25を覆うようにFe−Ni−Co合金等の金属から成る蓋体26をYAGレーザ溶接,シーム溶接等の溶接またはろう接により接合して気密封止することにより、電子装置としていた。また、この蓋体26の電子部品25と対向する部分に光ファイバを固定したり、電子部品25と対向する部分に光を透過させる窓を設けたりすることもある(例えば、特許文献1を参照。)。
The conventional electronic component mounting package shown in FIG. 10 includes an iron (Fe) -nickel (Ni) -cobalt (Co) alloy or an iron (Fe) -manganese (Mn) alloy having a mounting portion 21a for the electronic component 25 on the upper surface. A disc-shaped base 21 made of a metal such as the above, and a through hole 22 having a diameter of 0.5 to 2 mm formed from the upper surface to the lower surface of the base 21 are inserted into the center, and at least the lower end protrudes from the through hole 22 Thus, the signal terminal 24 fixed through the sealing material 23 is provided. The signal terminal 24 is fixed through a sealing material 23 made of insulating glass containing borosilicate as a main component, and the base 21 and the signal terminal 24 are electrically insulated by the sealing material 23. A ground terminal 28 is connected to the lower surface of the base 21 between the two through holes 22. If necessary, the electronic component 25 is mounted on the mounting portion 21a of the electronic component mounting package via the circuit board 25a, and the upper end of the signal terminal 24 and the terminal of the electronic component 25 of the electronic component mounting package are connected to the circuit board. A lid 26 made of a metal such as an Fe-Ni-Co alloy is welded to the outer peripheral region of the upper surface of the base 21 so as to cover the electronic component 25 by welding such as YAG laser welding or seam welding. Or it was set as the electronic device by joining by brazing and airtightly sealing. In addition, an optical fiber may be fixed to a portion of the lid 26 that faces the electronic component 25, or a window that transmits light may be provided in a portion that faces the electronic component 25 (see, for example, Patent Document 1). .)

また、伝送速度が10Gbps以下の場合は、周辺部品のインピーダンスは25Ωで形成されていたが、高周波化が進むにつれ、周辺部品のインピーダンスが50Ωで形成されるようになっているため、高周波の通る信号端子24のインピーダンスを50Ωにマッチングさせようとすると、貫通孔22の径が、インピーダンスを従来の25Ωで設計した場合に対してほぼ2倍となることがわかっている。25Gbps以上の高周波信号で駆動される電子部品25を搭載し、インピーダンスを50Ωにマッチングさせるために信号端子24の通る貫通孔22の径を大きくすると、蓋体26をYAGレーザ溶接,シーム溶接またはろう接等の接合方法で気密封着した場合に、気密不良が発生しやすくなるという問題点があった。これは、貫通孔22の径が大きくなることで蓋体接合部21bと貫通孔22との距離が近付いたので、例えばシ
ーム溶接の場合は主に機械的衝撃が、ろう接の場合は基体21と蓋体26との熱膨張係数の差による熱応力が蓋体接合部21bに加わり、これが貫通孔22へ伝わることにより、貫通孔22内の封止材23にクラックが発生したり、貫通孔22の内壁と封止材23との間や信号端子24と封止材23との間に剥がれが発生したりしてしまうためであると考えられる。また、シーム溶接やYAGレーザ溶接の場合は急激に高温に加熱され、蓋体接合部21bから貫通孔22までの距離が短いとその間で熱が拡散しないので貫通孔22の内面もすぐに高温になるのに対して、金属製の基体21に対して熱伝導率の小さいガラス製の封止材23は温度が上昇するのに時間がかかり、両者の間で熱膨張差が生じて貫通孔22の内壁と封止材23との間や信号端子24と封止材23との間に剥がれが発生してしまうと考えられる。
When the transmission speed is 10 Gbps or less, the impedance of the peripheral component is 25 Ω. However, as the frequency increases, the impedance of the peripheral component is 50 Ω. When trying to match the impedance of the signal terminal 24 to 50Ω, it has been found that the diameter of the through hole 22 is almost twice that when the impedance is designed with the conventional 25Ω. When the electronic component 25 driven by a high frequency signal of 25 Gbps or more is mounted and the diameter of the through hole 22 through which the signal terminal 24 passes in order to match the impedance to 50Ω, the lid 26 is YAG laser welded, seam welded or brazed. There has been a problem in that airtight defects are likely to occur when airtightly sealed by a joining method such as contact. This is because the distance between the lid joint portion 21b and the through-hole 22 has become closer due to the increase in the diameter of the through-hole 22, so that, for example, mechanical impact is mainly applied in the case of seam welding, and the base 21 in the case of brazing. The thermal stress due to the difference in the thermal expansion coefficient between the lid body 26 and the lid body 26 is applied to the lid joint portion 21b and is transmitted to the through hole 22, thereby generating cracks in the sealing material 23 in the through hole 22 or through holes. This is probably because peeling occurs between the inner wall 22 and the sealing material 23 or between the signal terminal 24 and the sealing material 23. In addition, in the case of seam welding or YAG laser welding, the inner surface of the through-hole 22 is immediately heated to a high temperature since the heat is not rapidly diffused when the distance from the lid joint 21b to the through-hole 22 is short. On the other hand, the glass sealing material 23 having a low thermal conductivity with respect to the metal base 21 takes time for the temperature to rise, and a difference in thermal expansion occurs between the two, resulting in the through hole 22. It is considered that peeling occurs between the inner wall and the sealing material 23 or between the signal terminal 24 and the sealing material 23.

このような問題に対して、蓋体接合部21bから封止材23までの距離を大きくするために、図11(a)に要部を拡大して示すように貫通孔22の蓋体接合部21bに近い上面側の径を小さくしたり、図11(b)に示すように封止材23を貫通孔22の下側のみに配置したりするという構成が考えられる(例えば、特許文献2および特許文献3を参照。)。さらには、このような構成では、貫通孔22の径が小さい部分や封止材23のない部分においてインピーダンスが整合しなくなってしまうので、図11(c)に示すように封止材23を下面側のみに配置し、上面側は径を小さくしてインピーダンスを整合させたエアー同軸とする構成とすることが考えられる(例えば、特許文献4を参照。)。   In order to increase the distance from the lid joint portion 21b to the sealing material 23, the lid joint portion of the through hole 22 is enlarged as shown in FIG. A configuration in which the diameter on the upper surface side close to 21b is reduced or the sealing material 23 is disposed only on the lower side of the through hole 22 as shown in FIG. (See Patent Document 3). Furthermore, in such a configuration, impedance is not matched in a portion where the diameter of the through hole 22 is small or a portion where the sealing material 23 is not present, so that the sealing material 23 is placed on the bottom surface as shown in FIG. It is conceivable that the air coaxial is arranged only on the side and the upper surface side has a reduced diameter and matched impedance (for example, see Patent Document 4).

特開平8−130266号公報JP-A-8-130266 特開2008−130834号公報JP 2008-130834 A 特開2007−88233号公報JP 2007-88233 A 特開平6−338709号公報JP-A-6-338709

しかしながら、貫通孔22は大径部と小径部を有することから、大径部の小径部側には信号端子24の長さ方向に対して垂直な段差面を有するものとなる。通常は信号端子24と信号端子24の外面に平行な大径部の内面との間の結合量によりインピーダンスを整合させるが、大径部の小径部側においては段差面との距離が短く、信号端子24と段差面との間でも結合するので、この部分ではインピーダンスが小さくなってしまうという問題点があった。   However, since the through-hole 22 has a large-diameter portion and a small-diameter portion, the small-diameter portion side of the large-diameter portion has a step surface perpendicular to the length direction of the signal terminal 24. Normally, impedance is matched by the amount of coupling between the signal terminal 24 and the inner surface of the large-diameter portion parallel to the outer surface of the signal terminal 24, but the distance from the step surface is short on the small-diameter side of the large-diameter portion. Since the terminal 24 and the stepped surface are also coupled, there is a problem that the impedance is reduced in this portion.

本発明は上記従来の問題点に鑑みて完成されたものであり、その目的は、特性インピーダンスを大きくして高周波信号を伝送するために信号端子を固定する貫通孔を大きくしても、気密不良が発生しない電子部品搭載用パッケージおよびそれを用いた電子装置を提供することにある。   The present invention has been completed in view of the above-mentioned conventional problems, and its purpose is to achieve a poor airtightness even if the through hole for fixing the signal terminal is enlarged in order to increase the characteristic impedance and transmit the high-frequency signal. It is an object of the present invention to provide an electronic component mounting package and an electronic device using the same.

本発明の電子部品搭載用パッケージは、上面の外周領域に溶接またはろう接により蓋体を接合する蓋体接合部を有するとともに、該蓋体接合部の内側領域に、上面に電子部品の搭載部を、および上面から下面にかけて貫通する複数の貫通孔を有する基体と、前記貫通孔に充填された封止材を貫通して固定された信号端子とを具備した電子部品搭載用パッケージであって、前記貫通孔は前記基体の下面側の大径部と上面側の小径部とを有しており、前記封止材は前記貫通孔の大径部に前記小径部側の段差面との間に隙間を設けて充填されていることを特徴とするものである。   The electronic component mounting package of the present invention has a lid joint portion for joining the lid body by welding or brazing to the outer peripheral region of the upper surface, and an electronic component mounting portion on the upper surface in the inner region of the lid joint portion. And a substrate having a plurality of through holes penetrating from the upper surface to the lower surface, and a signal terminal fixed through the sealing material filled in the through holes, The through-hole has a large-diameter portion on the lower surface side of the base and a small-diameter portion on the upper surface side, and the sealing material is between the large-diameter portion of the through-hole and the step surface on the small-diameter portion side. It is characterized by being filled with a gap.

また、本発明の電子部品搭載用パッケージは、上記構成において、前記段差面が前記大径部から前記小径部に向かって傾斜していることを特徴とするものである。   The electronic component mounting package of the present invention is characterized in that, in the above configuration, the step surface is inclined from the large diameter portion toward the small diameter portion.

また、本発明の電子部品搭載用パッケージは、上記各構成において、前記小径部の内面と前記信号端子との間に絶縁性部材が配置されていることを特徴とするものである。   The electronic component mounting package of the present invention is characterized in that, in each of the above configurations, an insulating member is disposed between the inner surface of the small diameter portion and the signal terminal.

本発明の電子装置は、上記各構成の本発明の電子部品搭載用パッケージの前記搭載部に電子部品を搭載するとともに、前記基体の前記蓋体接合部に蓋体を接合したことを特徴とするものである。   The electronic device of the present invention is characterized in that an electronic component is mounted on the mounting portion of the electronic component mounting package of the present invention having the above-described configuration, and a lid is bonded to the lid bonding portion of the base. Is.

本発明の電子部品搭載用パッケージによれば、貫通孔は基体の下面側の大径部と上面側の小径部とを有しており、封止材は貫通孔の大径部に小径部側の段差面との間に隙間を設けて充填されていることから、蓋体を基体の上面の外周部の蓋体接合部に溶接またはろう接により接合したとしても、蓋体接合部と封止材との間の距離が大きいので、接合時の衝撃や接合後の熱応力が基体の蓋体接合部と封止材との間の部分によって緩和され、また、この部分により蓋体接合部で発生した熱が拡散し、貫通孔内の封止材にクラックが入ったり封止材と信号端子や貫通孔の内壁面との間で剥がれが生じたりすることがなく、気密性が損なわれることのない高信頼性の電子装置を得ることができる。また、信号端子と段差面との間の隙間には比誘電率の小さい空気が存在することから、これらの間の電磁結合が小さくなり、信号端子と信号端子の外面に平行な大径部の内面との間の電磁結合がほとんどとなるので、大径部の封止材が充填された部分において、その長さ方向でインピーダンスの整合していない部分が短くなって、高周波信号の伝送特性が向上する。   According to the electronic component mounting package of the present invention, the through hole has the large diameter portion on the lower surface side of the base and the small diameter portion on the upper surface side, and the sealing material is on the small diameter portion side on the large diameter portion of the through hole. Even if the lid is joined to the lid joint on the outer periphery of the upper surface of the base by welding or brazing, the lid joint is sealed. Since the distance to the material is large, the impact during joining and the thermal stress after joining are alleviated by the part between the lid joint part of the base and the sealing material. The generated heat is diffused, and the sealing material in the through hole is not cracked or peeled off between the sealing material and the signal terminal or the inner wall surface of the through hole, and the airtightness is impaired. And a highly reliable electronic device can be obtained. In addition, since air with a low relative dielectric constant exists in the gap between the signal terminal and the stepped surface, the electromagnetic coupling between them is reduced, and the large diameter portion parallel to the outer surface of the signal terminal and the signal terminal is reduced. Since the electromagnetic coupling between the inner surface and the inner surface becomes almost equal, the portion where impedance is not matched in the length direction is shortened in the portion filled with the sealing material of the large diameter portion, and the transmission characteristic of the high frequency signal is reduced. improves.

また、本発明の電子部品搭載用パッケージによれば、上記構成において、段差面が大径部から小径部に向かって傾斜しているときには、貫通孔の径が大径から小径に急激に変化することがないので、インピーダンスも急激に変化せず、高周波信号の伝送特性がより向上する。   According to the electronic component mounting package of the present invention, in the above configuration, when the stepped surface is inclined from the large diameter portion toward the small diameter portion, the diameter of the through hole is rapidly changed from the large diameter to the small diameter. Therefore, the impedance does not change abruptly, and the transmission characteristics of the high frequency signal are further improved.

また、本発明の電子部品搭載用パッケージによれば、上記各構成において、小径部の内面と信号端子との間に絶縁性部材が配置されているときには、貫通孔への信号端子の封止材による固定時に信号端子の位置がずれて信号端子と小径部との相対位置がずれたり、信号端子と回路基板との接合時等の電子部品搭載用パッケージの組み立て時に信号端子と小径部の相対位置がずれたり、組み立て時の取り扱いによって信号端子が変形するなどして小径部内における信号端子の位置がずれたりしても、小径部の内面と信号端子との間に絶縁性部材が配置されていることによって信号端子と小径部の内面(基体)とが接触することがなく、絶縁性が保たれるので、より高信頼性の半導体素子収納用パッケージとなる。   Further, according to the electronic component mounting package of the present invention, in each of the above configurations, when the insulating member is disposed between the inner surface of the small diameter portion and the signal terminal, the signal terminal sealing material to the through hole The relative position between the signal terminal and the small diameter part when the electronic component mounting package is assembled, such as when the signal terminal and the circuit board are joined together Even if the position of the signal terminal in the small-diameter portion is shifted due to the displacement or the signal terminal is deformed by handling during assembly, an insulating member is disposed between the inner surface of the small-diameter portion and the signal terminal. As a result, the signal terminal and the inner surface (base) of the small-diameter portion do not come into contact with each other, and insulation is maintained, so that a more reliable package for housing a semiconductor element is obtained.

本発明の電子装置によれば、上記構成の本発明の電子部品搭載用パッケージの搭載部に電子部品を搭載するとともに、基体の蓋体接合部に蓋体を接合したことから、貫通孔の、信号端子が封止材により固定された部分の径が大きい場合であっても、封止材が蓋体接合部から離れていることにより、蓋体を基板の上面の外周部に溶接またはろう接により接合したときの衝撃や接合後の熱応力により気密性が損なわれることがないので、気密性に優れた高信頼性の電子装置となる。   According to the electronic device of the present invention, since the electronic component is mounted on the mounting portion of the electronic component mounting package of the present invention having the above-described configuration, and the lid body is joined to the lid joint portion of the base body, Even when the diameter of the portion where the signal terminal is fixed by the sealing material is large, the lid is welded or brazed to the outer peripheral portion of the upper surface of the substrate by separating the sealing material from the lid joint. Since the airtightness is not impaired by the impact or thermal stress after the bonding due to bonding, a highly reliable electronic device with excellent airtightness is obtained.

本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の例を示す斜視図である。It is a perspective view which shows the other example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the electronic component mounting package of this invention. (a)は本発明の電子部品搭載用パッケージの実施の形態の他の例を示す断面図、(b)は下面図である。(A) is sectional drawing which shows the other example of embodiment of the electronic component mounting package of this invention, (b) is a bottom view. (a)は本発明の電子部品搭載用パッケージの実施の形態の他の例を示す断面図、(b)は下面図である。(A) is sectional drawing which shows the other example of embodiment of the electronic component mounting package of this invention, (b) is a bottom view. 本発明の電子部品搭載用パッケージの実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the electronic component mounting package of this invention. 従来の電子部品搭載用パッケージの例を示す断面図である。It is sectional drawing which shows the example of the conventional electronic component mounting package. (a)〜(c)は、それぞれ従来の電子部品搭載用パッケージの要部を拡大した断面図である。(A)-(c) is sectional drawing to which the principal part of the conventional electronic component mounting package was expanded, respectively.

本発明の電子部品搭載用パッケージおよびそれを用いた電子装置について、添付の図面を参照しつつ詳細に説明する。図1および図2は、それぞれ本発明の電子搭載用パッケージの実施の形態の一例および他の例を示す斜視図であり、図3は図2におけるA−A線で切断した断面を示す断面図であり、図4は本発明の電子搭載用パッケージの他の例を示す断面図であり、図5(a)および図6(a)は、それぞれ本発明の電子部品搭載用パッケージの実施の形態のさらに他の例を示す断面図であり、図5(b)および図6(b)は、それぞれ図5(a)および図6(a)の下面を示す下面図である。図7〜図9は、本発明の電子部品搭載用パッケージの実施の形態の他の例を示す断面図である。   An electronic component mounting package and an electronic apparatus using the same according to the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 are perspective views showing an example of an embodiment of an electronic mounting package according to the present invention and another example, respectively, and FIG. 3 is a cross-sectional view showing a cross section taken along line AA in FIG. 4 is a cross-sectional view showing another example of the electronic mounting package of the present invention. FIGS. 5 (a) and 6 (a) are embodiments of the electronic component mounting package of the present invention, respectively. FIG. 5B and FIG. 6B are bottom views showing the bottom surfaces of FIG. 5A and FIG. 6A, respectively. 7 to 9 are sectional views showing other examples of the embodiment of the electronic component mounting package of the present invention.

図1〜図9において、1は基体、1aは搭載部、1bは蓋体接合部、1cは切欠き、1dは溝、2は貫通孔、2aは貫通孔2の大径部、2bは貫通孔2の小径部、2cは貫通孔2の段差面、3は封止材、4は信号端子、5は電子部品、5aは電子部品を搭載する回路基板、6は蓋体、7はボンディングワイヤ、8は接地端子、9は絶縁性部材である。   1 to 9, 1 is a base, 1a is a mounting portion, 1b is a lid joint portion, 1c is a notch, 1d is a groove, 2 is a through hole, 2a is a large diameter portion of the through hole 2, and 2b is a through hole. Small diameter portion of hole 2, 2 c is a stepped surface of through-hole 2, 3 is a sealing material, 4 is a signal terminal, 5 is an electronic component, 5 a is a circuit board on which the electronic component is mounted, 6 is a lid, and 7 is a bonding wire , 8 are ground terminals, and 9 is an insulating member.

図1に示す例では、基体1の上面に直接電子部品5が搭載されて、ボンディングワイヤ7で信号端子4・4の上端部と電子部品5とが接続されている。また図2に示す例では、基体1の上面から突出した突出部を搭載部1aとして、その側面に回路基板5aを介して電子部品5が搭載され、電子部品5はボンディングワイヤ7で回路基板5a上の配線に接続され、さらに信号端子4・4の端部と回路基板5a上の配線とはろう材等の接合材(図示せず)で接続されている。さらに、図3〜図9に示す例のように、破線で示すような蓋体6を蓋体接合部1bに接合することにより、本発明の電子装置が基本的に構成される。   In the example shown in FIG. 1, the electronic component 5 is directly mounted on the upper surface of the base 1, and the upper ends of the signal terminals 4 and 4 are connected to the electronic component 5 by bonding wires 7. In the example shown in FIG. 2, the protruding part protruding from the upper surface of the base 1 is used as the mounting part 1 a, and the electronic component 5 is mounted on the side surface via the circuit board 5 a. Further, the ends of the signal terminals 4 and 4 and the wiring on the circuit board 5a are connected by a bonding material (not shown) such as a brazing material. Further, as in the example shown in FIGS. 3 to 9, the electronic device of the present invention is basically configured by joining the lid 6 as shown by the broken line to the lid joint 1b.

本発明の電子部品搭載用パッケージは、上面の外周領域に溶接またはろう接により蓋体6を接合する蓋体接合部1bを有するとともに、蓋体接合部1bの内側領域に、上面に電子部品5の搭載部1aを、および上面から下面にかけて貫通する複数の貫通孔2・2を有する基体1と、貫通孔2に充填された封止材3を貫通して固定された信号端子4とを具備した電子部品搭載用パッケージであって、貫通孔2は基体1の下面側の大径部2aと上面側の小径部2bとを有しており、封止材3は貫通孔2の大径部2aに小径部2b側の段差面2cとの間に隙間を設けて充填されていることを特徴とするものである。   The electronic component mounting package of the present invention has a lid joint portion 1b for joining the lid body 6 by welding or brazing to the outer peripheral region of the top surface, and the electronic component 5 on the top surface in the inner region of the lid joint portion 1b. And a base 1 having a plurality of through holes 2, 2 penetrating from the upper surface to the lower surface, and a signal terminal 4 fixed through the sealing material 3 filled in the through hole 2. The through-hole 2 has a large-diameter portion 2 a on the lower surface side and a small-diameter portion 2 b on the upper surface side of the base 1, and the sealing material 3 is a large-diameter portion of the through-hole 2. 2a is filled with a gap between the stepped surface 2c on the side of the small diameter portion 2b.

このような構成としたことから、蓋体6を基体1の上面の外周部の蓋体接合部1bに溶接またはろう接により接合したとしても、蓋体接合部1bと封止材3との間の距離が大きいので、接合時の衝撃や接合後の熱応力が基体1の蓋体接合部1bと封止材3との間の部
分によって緩和される。また、この部分によって蓋体接合部1bで発生した熱が拡散し、貫通孔2の大径部2a内の封止材3にクラックが入ったり封止材3と信号端子4や貫通孔2の内壁面との間で剥がれが生じたりすることがなく、気密性が損なわれることのない高信頼性の電子装置を得ることができる。また、信号端子4と段差面2cとの間の隙間には比誘電率の小さい空気が存在することから、これらの間の電磁結合が小さくなり、信号端子4と信号端子4の外面に平行な大径部2aの内面との間の電磁結合がほとんどとなるので、大径部の封止材3が充填された部分において、その長さ方向でインピーダンスの整合していない部分が短くなって、高周波信号の伝送特性が向上する。
Even if the lid body 6 is joined to the lid joint portion 1b on the outer peripheral portion of the upper surface of the base body 1 by welding or brazing because of such a configuration, the gap between the lid joint portion 1b and the sealing material 3 is not limited. Therefore, the impact at the time of joining and the thermal stress after joining are alleviated by the part between the lid joined part 1b of the base 1 and the sealing material 3. In addition, the heat generated in the lid joint portion 1b is diffused by this portion, and the sealing material 3 in the large diameter portion 2a of the through hole 2 is cracked or the sealing material 3 and the signal terminal 4 or the through hole 2 It is possible to obtain a highly reliable electronic device in which no peeling occurs between the inner wall surface and the airtightness is not impaired. In addition, since air having a small relative dielectric constant exists in the gap between the signal terminal 4 and the stepped surface 2c, electromagnetic coupling between them becomes small and parallel to the outer surfaces of the signal terminal 4 and the signal terminal 4. Since the electromagnetic coupling with the inner surface of the large-diameter portion 2a is almost, in the portion filled with the sealing material 3 of the large-diameter portion, the portion where the impedance is not matched in the length direction is shortened, High-frequency signal transmission characteristics are improved.

また、本発明の電子部品搭載用パッケージによれば、図4〜図6に示す例のように、上記構成において、段差面2cが大径部2aから小径部2bに向かって傾斜しているときには、貫通孔2の径が大径から小径に急激に変化することがないので、インピーダンスも急激に変化せず、高周波信号の伝送特性がより向上する。   Further, according to the electronic component mounting package of the present invention, as in the example shown in FIGS. 4 to 6, in the above configuration, when the step surface 2c is inclined from the large diameter portion 2a toward the small diameter portion 2b. Since the diameter of the through hole 2 does not change suddenly from the large diameter to the small diameter, the impedance does not change suddenly, and the transmission characteristics of the high frequency signal are further improved.

また、本発明の電子部品搭載用パッケージによれば、図7〜図9に示す例のように、上記各構成において、小径部2bの内面と信号端子4との間に絶縁性部材9が配置されているときには、貫通孔2への信号端子4の封止材3による固定時に信号端子4の位置がずれて信号端子4と小径部2bとの相対位置がずれたり、信号端子4と回路基板との接合時等の電子部品搭載用パッケージの組み立て時に信号端子4と小径部2bの相対位置がずれたり、組み立て時の取り扱いによって信号端子4が変形するなどして小径部2b内における信号端子4の位置がずれたりしても、小径部2bの内面と信号端子4との間に絶縁性部材9が配置されていることによって信号端子4と小径部2bの内面(基体1)とが接触することがなく、絶縁性が保たれるので、より高信頼性の半導体素子収納用パッケージとなる。   Further, according to the electronic component mounting package of the present invention, as in the examples shown in FIGS. 7 to 9, the insulating member 9 is disposed between the inner surface of the small diameter portion 2 b and the signal terminal 4 in each of the above configurations. When the signal terminal 4 is fixed to the through hole 2 with the sealing material 3, the position of the signal terminal 4 is shifted and the relative position between the signal terminal 4 and the small diameter portion 2b is shifted. The signal terminal 4 in the small-diameter portion 2b is deformed when the relative position of the signal terminal 4 and the small-diameter portion 2b is shifted at the time of assembling the electronic component mounting package at the time of joining or the like. Even if the position of the signal is shifted, the insulating member 9 is disposed between the inner surface of the small diameter portion 2b and the signal terminal 4, so that the signal terminal 4 and the inner surface (base 1) of the small diameter portion 2b come into contact with each other. And insulation is maintained In, a more highly reliable semiconductor device package for housing.

本発明の電子装置は、上記構成の本発明の電子部品搭載用パッケージの搭載部1aに電子部品5を搭載するとともに、基体1の蓋体接合部1bに蓋体6を接合したことを特徴とするものである。このような構成としたことから、貫通孔2の信号端子4が封止材3により固定された部分の径が大きい場合であっても、封止材3が蓋体接合部1bから離れていることにより、蓋体6を基体1の上面の外周部の蓋体接合部1bに溶接またはろう接により接合したときの衝撃や接合後の熱応力により気密性が損なわれることがないので、気密性に優れた、高信頼性の電子装置となる。   The electronic device of the present invention is characterized in that the electronic component 5 is mounted on the mounting portion 1a of the electronic component mounting package of the present invention having the above-described configuration, and the lid body 6 is joined to the lid joint portion 1b of the base body 1. To do. Since it was set as such a structure, even if it is a case where the diameter of the part to which the signal terminal 4 of the through-hole 2 was fixed by the sealing material 3 is large, the sealing material 3 is separated from the cover body junction part 1b. Thus, the airtightness is not impaired by the impact or thermal stress after joining when the lid 6 is joined to the lid joint 1b on the outer peripheral portion of the upper surface of the base body 1 by welding or brazing. And a highly reliable electronic device.

基体1は、上面の中央部に電子部品5の搭載部1aを有するとともに搭載された電子部品5が発生する熱をパッケージの外部に放散する機能を有する。このため、基体1は、熱伝導性の良い金属から成り、搭載される電子部品5やセラミック製の回路基板5aの熱膨張係数に近いものやコストの安いものとして、例えば、Fe−Ni−Co合金やFe−Mn合金等の鉄系の合金や純鉄等の金属が選ばれる。より具体的には、Fe99.6質量%−Mn0.4質量%系のSPC(Steel Plate Cold)材がある。例えば基体1がFe−Mn合金
から成る場合は、このインゴット(塊)に圧延加工や打ち抜き加工等の周知の金属加工方法を施すことによって所定形状に製作され、貫通孔2はドリル加工や金型による打ち抜き加工によって形成される。また、基体1が搭載部1aとして突出部を有する形状の場合は、切削加工やプレス加工することによって形成することができる。
The substrate 1 has a mounting portion 1a for the electronic component 5 at the center of the upper surface and has a function of radiating heat generated by the mounted electronic component 5 to the outside of the package. For this reason, the base body 1 is made of a metal having good thermal conductivity, and is close to the thermal expansion coefficient of the electronic component 5 or ceramic circuit board 5a to be mounted or has a low cost. For example, Fe-Ni-Co An alloy such as an alloy or an Fe-Mn alloy or a metal such as pure iron is selected. More specifically, there is an SPC (Steel Plate Cold) material of Fe 99.6 mass% -Mn 0.4 mass%. For example, when the substrate 1 is made of an Fe—Mn alloy, the ingot (lumb) is manufactured in a predetermined shape by applying a known metal processing method such as rolling or punching, and the through-hole 2 is drilled or molded. It is formed by punching. Moreover, when the base | substrate 1 is a shape which has a protrusion part as the mounting part 1a, it can form by cutting or pressing.

基体1の形状は、通常は厚みが0.5〜2mmの平板状であり、その形状には特に制限は
ないが、例えば直径が3〜10mmの円板状,半径が1.5〜8mmの円周の一部を切り取っ
た半円板状,一辺が3〜15mmの四角板状等である。基体1の厚みは一様でなくてもよく、例えば、基体1の下面側は貫通孔2・2が形成される領域だけが厚みが厚く、基体1の下面の蓋体接合部1bに対向する部分に切欠き1cを設けてこの部分の厚みが薄いものとしてもよい。このようにすると、基体1の上面の蓋体接合部1bで発生した熱が、基体1
の下面の蓋体接合部1bに対向する部分から放熱されやすくなるとともに、蓋体接合部1bで発生した熱の封止材3への最短の伝熱経路(蓋体接合部1bと封止材3とを結ぶ直線)の途中に空気層が形成されるので、蓋体接合部1bから封止材3への伝熱を抑えることができるので好ましい。さらに、例えば図5(a)および(b)に示す例のように、基体1の中心から放射状に延びる線に沿った形状の切欠き1cを形成することによってこの部分の表面を凹凸形状にすると、蓋体接合部1bで発生した熱をより効率よく放熱することができる。
The shape of the substrate 1 is usually a flat plate having a thickness of 0.5 to 2 mm, and the shape thereof is not particularly limited, but for example, a disk having a diameter of 3 to 10 mm and a circumference having a radius of 1.5 to 8 mm. For example, a semicircular plate with a part cut off, a square plate with a side of 3 to 15 mm, and the like. The thickness of the substrate 1 may not be uniform. For example, only the region where the through holes 2 and 2 are formed is thick on the lower surface side of the substrate 1, and faces the lid joint portion 1 b on the lower surface of the substrate 1. A cutout 1c may be provided in the portion so that the thickness of this portion is thin. If it does in this way, the heat | fever which generate | occur | produced in the cover body junction part 1b of the upper surface of the base | substrate 1 will be carried out.
It is easy to dissipate heat from the portion of the lower surface facing the lid joint 1b, and the shortest heat transfer path to the sealing material 3 of the heat generated in the lid joint 1b (the lid joint 1b and the sealing material) Since an air layer is formed in the middle of the straight line connecting 3), heat transfer from the lid joint portion 1 b to the sealing material 3 can be suppressed, which is preferable. Further, as in the example shown in FIGS. 5 (a) and 5 (b), by forming a notch 1c having a shape along a line extending radially from the center of the substrate 1, the surface of this portion is made uneven. The heat generated at the lid joint 1b can be radiated more efficiently.

また、図6(a)および(b)に示す例のように、基体1の下面に貫通孔2・2が形成される領域を取り囲むように溝1dを形成してもよい。図6(a)および(b)に示す例のように、蓋体接合部1bで発生した熱の封止材3への最短の伝熱経路(蓋体接合部1bと封止材3とを結ぶ直線)を横切るような溝1dとすると、蓋体接合部1bから封止材3への伝熱を抑えることができるので好ましい。なお、同様の溝1dは基体1の上面に形成してもよい。また、このような溝1dを複数形成することにより下面を凹凸形状にして、下面からの放熱性をより高めるようにしてもよい。   Further, as in the example shown in FIGS. 6A and 6B, the groove 1 d may be formed so as to surround a region where the through holes 2 and 2 are formed on the lower surface of the base 1. As in the example shown in FIGS. 6A and 6B, the shortest heat transfer path (the lid joint portion 1b and the sealing material 3) to the sealing material 3 of the heat generated in the lid joint portion 1b. A groove 1d that crosses the connecting straight line) is preferable because heat transfer from the lid joint portion 1b to the sealing material 3 can be suppressed. A similar groove 1 d may be formed on the upper surface of the substrate 1. In addition, by forming a plurality of such grooves 1d, the lower surface may be made uneven to further improve the heat dissipation from the lower surface.

図1〜図9に示す例では、2つの貫通孔2を有する基体1に1個の電子部品5を搭載しているが、複数の電子部品5を搭載したり、電子部品5の数や電子部品5の端子の数に応じて、信号端子4を固定する貫通孔2を3つ以上形成したりしても構わない。   In the example shown in FIGS. 1 to 9, one electronic component 5 is mounted on the base 1 having two through holes 2, but a plurality of electronic components 5 are mounted, the number of electronic components 5 and the number of electronic components 5 Depending on the number of terminals of the component 5, three or more through holes 2 for fixing the signal terminals 4 may be formed.

基体1の厚みは0.5mm以上2mm以下が好ましい。厚みが0.5mm未満の場合は、電子部品5を保護するための金属製の蓋体6を金属製の基体1の上面に接合する際に、接合温度等の接合条件により基体1が曲がったりして変形し易くなり、変形により気密性が低下しやすくなる。一方、厚みが2mmを超えると、電子部品搭載用パッケージや電子装置の厚みが不要に厚いものとなり、小型化し難くなる。   The thickness of the substrate 1 is preferably 0.5 mm or more and 2 mm or less. When the thickness is less than 0.5 mm, when the metal lid 6 for protecting the electronic component 5 is bonded to the upper surface of the metal substrate 1, the substrate 1 may be bent depending on the bonding conditions such as the bonding temperature. It becomes easy to deform, and the airtightness tends to be lowered by the deformation. On the other hand, if the thickness exceeds 2 mm, the thickness of the electronic component mounting package or the electronic device becomes unnecessarily thick, and it is difficult to reduce the size.

基体1の表面には、耐食性に優れ、電子部品5や回路基板5aあるいは蓋体6を接合し固定するためのろう材との濡れ性に優れた、厚さが0.5〜9μmのNi層と厚さが0.5〜5μmのAu層とをめっき法によって順次被着させておくのがよい。これにより、基体1が酸化腐食するのを有効に防止できるとともに電子部品5や回路基板5aあるいは蓋体6を基体1に良好にろう接することができる。   The surface of the substrate 1 is excellent in corrosion resistance, excellent in wettability with a brazing material for joining and fixing the electronic component 5, the circuit board 5a or the lid body 6, and a Ni layer having a thickness of 0.5 to 9 μm and a thickness. It is preferable to sequentially deposit an Au layer having a thickness of 0.5 to 5 μm by a plating method. Thereby, it is possible to effectively prevent the base body 1 from being oxidatively corroded, and to satisfactorily braze the electronic component 5, the circuit board 5 a, or the lid body 6 to the base body 1.

貫通孔2は大径部2aと小径部2bとを有する形状である。図3〜図9に示す例のように、下面側の大径部2aと上面側の小径部2bとが中心を同じくして配置される。そして、2つの貫通孔2・2の大径部2aに封止材3により信号端子4を固定している。これにより、封止材3を蓋体接合部1bからより遠ざけることができ、蓋体接合部1bに発生した熱によって気密性が損なわれる可能性を低減できる。   The through hole 2 has a shape having a large diameter portion 2a and a small diameter portion 2b. As in the example shown in FIGS. 3 to 9, the large-diameter portion 2 a on the lower surface side and the small-diameter portion 2 b on the upper surface side are arranged in the same center. And the signal terminal 4 is being fixed to the large diameter part 2a of the two through-holes 2 and 2 with the sealing material 3. Thereby, the sealing material 3 can be moved further away from the lid joint portion 1b, and the possibility that the airtightness is impaired by the heat generated in the lid joint portion 1b can be reduced.

信号端子4は、一方の端部(上端部)は基体1の上面と面一とするか、あるいは2mm程度まで突出させ、他方の端部(下端部)は基体1の下面から1〜20mm程度突出させて固定される。例えば、図1に示す例のように、信号端子4の上端部と電子部品5(または電子部品5が搭載された回路基板5a)とをボンディングワイヤ7を介して電気的に接続する場合は、信号端子4の上端部は必ずしも基体1の上面から突出していなくてもよい。一方、信号端子4の下端部は、外部電気回路(図示せず)に接続するために基体1の下面から突出しているのが好ましい。例えば、図1または図2に示す例のように、信号端子4の上端部と電子部品5とを電気的に接続するとともに、信号端子4の下端部を外部電気回路(図示せず)に電気的に接続することにより、信号端子4は電子部品5と外部電気回路との間の入出力信号を伝送する機能を果たす。   The signal terminal 4 has one end (upper end) flush with the upper surface of the base 1 or protrudes to about 2 mm, and the other end (lower end) of about 1 to 20 mm from the lower surface of the base 1. It is fixed by protruding. For example, as in the example shown in FIG. 1, when the upper end of the signal terminal 4 and the electronic component 5 (or the circuit board 5a on which the electronic component 5 is mounted) are electrically connected via the bonding wire 7, The upper end portion of the signal terminal 4 does not necessarily protrude from the upper surface of the base 1. On the other hand, it is preferable that the lower end portion of the signal terminal 4 protrudes from the lower surface of the base 1 in order to connect to an external electric circuit (not shown). For example, as in the example shown in FIG. 1 or FIG. 2, the upper end of the signal terminal 4 and the electronic component 5 are electrically connected, and the lower end of the signal terminal 4 is electrically connected to an external electric circuit (not shown). Thus, the signal terminal 4 functions to transmit an input / output signal between the electronic component 5 and the external electric circuit.

封止材3は、ガラスやセラミックスなどの絶縁性の無機材料から成り、信号端子4と基
体1との絶縁間隔を確保するとともに、信号端子4を基体1の貫通孔2内に固定する機能を有する。このような封止材3の例としては、ホウケイ酸ガラス,ソーダガラス等のガラスおよびこれらのガラスに封止材3の熱膨張係数や比誘電率を調整するためのセラミックフィラーを加えたものが挙げられ、インピーダンスマッチングのためにその比誘電率を適宜選択する。比誘電率を低下させるフィラーとしては、酸化リチウム等が挙げられる。
The sealing material 3 is made of an insulating inorganic material such as glass or ceramics, and has a function of securing an insulating interval between the signal terminal 4 and the base 1 and fixing the signal terminal 4 in the through hole 2 of the base 1. Have. Examples of such a sealing material 3 include glass such as borosilicate glass and soda glass, and a glass filler added with a ceramic filler for adjusting the thermal expansion coefficient and relative dielectric constant of the sealing material 3. The relative dielectric constant is appropriately selected for impedance matching. Examples of the filler that lowers the dielectric constant include lithium oxide.

貫通孔2の小径部2bの直径は、中心に信号端子4が貫通することで特性インピーダンスが50Ωのエアー同軸が形成されるような寸法とする。例えば、信号端子4の直径が0.2
mmの場合であれば、小径部2bの直径は0.46mmとすればよい。大径部2aの直径は、例えば、信号端子4の外径が同じく0.2mmの場合は、封止材3に比誘電率が6.8であるものを用いると、1.75mmとすることで特性インピーダンスを50Ωとすることができる。また、信号端子4の外径が0.25mmの場合であれば、封止材3に比誘電率が5であるものを用いると、大径部2aの直径は1.65mmにすればよい。また、信号端子4の外径が0.25mmで、封止材3に比誘電率が6.8であるものを用いる場合は、大径部2aの直径は2.2mmにすればよい。
The diameter of the small-diameter portion 2b of the through hole 2 is set such that an air coaxial with a characteristic impedance of 50Ω is formed when the signal terminal 4 passes through the center. For example, the signal terminal 4 has a diameter of 0.2.
In the case of mm, the diameter of the small diameter portion 2b may be 0.46 mm. For example, when the outer diameter of the signal terminal 4 is also 0.2 mm, the diameter of the large diameter portion 2a is 1.75 mm when the sealing material 3 having a relative dielectric constant of 6.8 is used. 50Ω can be used. Further, when the outer diameter of the signal terminal 4 is 0.25 mm, when the sealing material 3 having a relative dielectric constant of 5 is used, the diameter of the large diameter portion 2a may be 1.65 mm. When the signal terminal 4 having an outer diameter of 0.25 mm and the sealing material 3 having a relative dielectric constant of 6.8 is used, the diameter of the large diameter portion 2a may be 2.2 mm.

貫通孔2の大径部2aの長さ(深さ)は、信号端子4の基体1への固定強度を高めるためにはより大きくするのが好ましい。   The length (depth) of the large-diameter portion 2a of the through hole 2 is preferably increased in order to increase the strength of fixing the signal terminal 4 to the base body 1.

信号端子4は、Fe−Ni−Co合金やFe−Ni合金等の金属から成り、例えば信号端子4がFe−Ni−Co合金から成る場合は、このインゴット(塊)に圧延加工や打ち抜き加工,切削加工等の周知の金属加工方法を施すことによって、長さが1.5〜22mmで
直径が0.1〜1mmの線状に製作される。信号端子4の強度を確保しながらより高いイン
ピーダンスでのマッチングを行ないつつ小型にするには、信号端子4の直径は0.15〜0.25mmが好ましい。信号端子4の直径が0.15mmより細くなると、電子部品搭載用パッケージを実装する場合の取り扱いで信号端子4が曲がりやすくなり、作業性が低下しやすくなる。また、直径が0.25mmより太くなると、インピーダンス整合させた場合の貫通孔2の径が信号端子4の径に伴い大きくなるので、製品の小型化に向かないものとなってしまう。
The signal terminal 4 is made of a metal such as Fe-Ni-Co alloy or Fe-Ni alloy. For example, when the signal terminal 4 is made of Fe-Ni-Co alloy, the ingot (lumb) is rolled or punched, By applying a known metal processing method such as cutting, a wire having a length of 1.5 to 22 mm and a diameter of 0.1 to 1 mm is manufactured. In order to reduce the size while performing matching with a higher impedance while ensuring the strength of the signal terminal 4, the diameter of the signal terminal 4 is preferably 0.15 to 0.25 mm. When the diameter of the signal terminal 4 is smaller than 0.15 mm, the signal terminal 4 is easily bent by handling when mounting the electronic component mounting package, and the workability is likely to be lowered. If the diameter is larger than 0.25 mm, the diameter of the through hole 2 when impedance matching is increased with the diameter of the signal terminal 4, which is not suitable for downsizing of the product.

信号端子4を貫通孔2に充填された封止材3を貫通して固定するには、例えば、封止材3がガラスから成る場合は、まず、周知の粉体プレス法や押し出し成形法を用いてガラス粉末を成形して、内径を信号端子4の外径に合わせ、外径を貫通孔2の大径部2aの径に合わせた筒状の成形体を作製し、この封止材3の成形体の孔に信号端子4を挿通して成形対を型に挿入して、所定の温度に加熱してガラスを溶融させた後、冷却して固化させることにより、信号端子4が固定された所定形状の封止材3を形成しておく。この封止材3を貫通孔2の大径部2aに挿入して、加熱することにより封止材3を大径部2aの内面に接合させる。このときの加熱をガラスが完全に溶融せず、軟化して大径部2aの内面に接合される程度にすることで、段差面2cまでガラスが濡れ拡がることがなく隙間が形成される。これにより、封止材3により貫通孔2が気密に封止されるとともに、封止材3によって信号端子4が基体1と絶縁されて固定され、同軸線路が形成される。あらかじめ封止材3だけを形成しておき、これを大径部2aに挿入するとともに信号端子4も封止材3の孔に挿通し、封止材3と大径部2aの内面および信号端子4の外面との接合を同時に行なってもよい。段差面2cが大径部2aから小径部2bに向かって傾斜している場合は、封止材3を大径部2aに挿入する際に、封止材3の位置決めがそのための治具を用いることなく容易にできる。   To fix the signal terminal 4 through the sealing material 3 filled in the through-hole 2, for example, when the sealing material 3 is made of glass, first, a known powder pressing method or extrusion molding method is used. Using this, the glass powder is molded, the inner diameter is matched with the outer diameter of the signal terminal 4, the cylindrical shaped body is made with the outer diameter matched with the diameter of the large diameter portion 2 a of the through hole 2, and this sealing material 3 The signal terminal 4 is inserted into the hole of the molded body, the molding pair is inserted into the mold, the glass is melted by heating to a predetermined temperature, and then cooled and solidified to fix the signal terminal 4. The sealing material 3 having a predetermined shape is formed. The sealing material 3 is inserted into the large diameter portion 2a of the through hole 2 and heated to join the sealing material 3 to the inner surface of the large diameter portion 2a. The heating at this time is such that the glass is not completely melted and is softened and joined to the inner surface of the large-diameter portion 2a, so that the glass is not spread to the stepped surface 2c and a gap is formed. As a result, the through hole 2 is hermetically sealed by the sealing material 3, and the signal terminal 4 is insulated and fixed from the base body 1 by the sealing material 3 to form a coaxial line. Only the sealing material 3 is formed in advance, and this is inserted into the large diameter portion 2a, and the signal terminal 4 is also inserted into the hole of the sealing material 3, and the sealing material 3 and the inner surface of the large diameter portion 2a and the signal terminal The four outer surfaces may be joined at the same time. When the step surface 2c is inclined from the large diameter portion 2a toward the small diameter portion 2b, a jig for positioning the sealing material 3 is used when the sealing material 3 is inserted into the large diameter portion 2a. Can be easily done.

あるいは、封止材3の長さで内径が大径部2aと同じである金属製の管状体に封止材3で充填して信号端子4を固定したものを作製し、基体1には小径部2b,隙間となる部分および管状体固定部を有する貫通孔2を形成しておき、信号端子4が封止材3で固定され
た管状体を貫通孔2の管状体固定部に嵌めて導電性の接合材で接合してもよい。
Alternatively, a metal tubular body having the same length as that of the large-diameter portion 2 a with the length of the sealing material 3 is filled with the sealing material 3 and the signal terminal 4 is fixed. A through hole 2 having a portion 2b, a gap portion and a tubular body fixing portion is formed, and the tubular body in which the signal terminal 4 is fixed by the sealing material 3 is fitted into the tubular body fixing portion of the through hole 2 to conduct electricity. May be joined with an adhesive material.

また、基体1を封止材3の上面部分を境に上下に分割して形成しておき、下側の基体の貫通孔2(大径部2a)を封止材3で充填して信号端子4を固定し、はんだ等の気密封着可能な接合材で上側の基体と接合することによって基体1を形成してもよい。このとき封止材3と段差面2cとの隙間は、接合材の厚みを隙間の長さとすることによって形成してもよいし、上側の基体に小径部2bと隙間の長さの大径部2aとを形成しておくことによって形成してもよい。   In addition, the base body 1 is divided into upper and lower parts with the upper surface portion of the sealing material 3 as a boundary, and the through hole 2 (large diameter portion 2a) of the lower base body is filled with the sealing material 3 to thereby form a signal terminal. The base 1 may be formed by fixing 4 and joining the upper base with a joining material such as solder that can be hermetically sealed. At this time, the gap between the sealing material 3 and the stepped surface 2c may be formed by setting the thickness of the bonding material to the length of the gap, or the upper base body has a small diameter portion 2b and a large diameter portion having a gap length. You may form by forming 2a.

このインピーダンスの変化を抑えるために、上述したように段差面2cとの間に隙間を設けて封止材3を充填する。隙間を設けることで、信号端子4と段差面2cとの間の比誘電率を小さくして結合を小さくすることができるからである。封止材3と小径部2b側の段差面2cとの間に隙間があればこのような効果が得られるが、例えば直径が0.2mmの
信号端子4に40GHzの信号を伝送させる場合であれば、インピーダンスが50Ωとなる小径部2bの直径は0.46mmであり、小径部2bと信号端子4との距離(隙間の長さ)は0.13mmとなるので、封止材3と小径部2b側の段差面2cとの距離(隙間の長さ)を0.13mm以上とすると、信号端子4と段差面2cとの間の結合を十分小さくすることができる。また、封止材3の段差面2cとの距離が伝送する周波数の波長の1/4以下であれば、インピーダンスの不整合があったとしても信号の反射は発生せず不整合の影響をほとんど受けることがないので、封止材3の段差面2cとの距離が、40GHzの波長の1/4以下である1.8mm以下であれば、隙間の部分が大径のエアー同軸となることによるインピー
ダンスの不整合の影響をほとんど受けることがない。
In order to suppress this change in impedance, as described above, a gap is provided between the step surface 2c and the sealing material 3 is filled. This is because by providing the gap, the relative permittivity between the signal terminal 4 and the stepped surface 2c can be reduced to reduce the coupling. Such an effect can be obtained if there is a gap between the sealing material 3 and the stepped surface 2c on the small diameter portion 2b side. For example, when a 40 GHz signal is transmitted to the signal terminal 4 having a diameter of 0.2 mm. The diameter of the small diameter portion 2b having an impedance of 50Ω is 0.46 mm, and the distance (the length of the gap) between the small diameter portion 2b and the signal terminal 4 is 0.13 mm. When the distance to the step surface 2c (the length of the gap) is 0.13 mm or more, the coupling between the signal terminal 4 and the step surface 2c can be made sufficiently small. Further, if the distance from the stepped surface 2c of the sealing material 3 is ¼ or less of the wavelength of the frequency to be transmitted, even if there is an impedance mismatch, no signal is reflected and the mismatch is hardly affected. If the distance from the stepped surface 2c of the sealing material 3 is 1.8 mm or less, which is 1/4 or less of the wavelength of 40 GHz, the impedance due to the gap portion being a large-diameter air coaxial. It is hardly affected by this inconsistency.

段差面2cが大径部2aから小径部2bに向かって傾斜しているときには、貫通孔2の径が大径から小径に急激に変化することがないので、インピーダンスも急激に変化せず、隙間の部分の平均の径が小さくなるので、隙間の部分が大径のエアー同軸となることによる影響もより小さくなる。また、信号端子4を大径部2aに固定する際に、段差面2cを下にして封止材3の成形体を貫通孔2の大径部2aに挿入しても、封止材3の成形体は径が小さくなる段差面2cで留まるので、封止材3の成形体の配置が容易にできる。   When the stepped surface 2c is inclined from the large diameter portion 2a toward the small diameter portion 2b, the diameter of the through hole 2 does not change suddenly from the large diameter to the small diameter. Since the average diameter of the portion becomes smaller, the influence of the gap portion becoming a large-diameter air coaxial becomes smaller. Further, when the signal terminal 4 is fixed to the large-diameter portion 2a, even if the molded body of the sealing material 3 is inserted into the large-diameter portion 2a of the through hole 2 with the stepped surface 2c facing down, Since the molded body remains on the stepped surface 2c having a small diameter, the molded body of the sealing material 3 can be easily arranged.

基体1の下面には接地端子8が接合される。接地端子8は、信号端子4と同じ様にして製作され、基体1の下面にロウ材等を用いて接合される。位置決めの容易性と接合強度の向上とのために、予め基体1の下面に穴を形成しておき、その穴に接地端子8を挿入して接合してもよい。また、同様の理由で、図3〜図9に示す例のように、基体1の下面に当接するように接地端子8に鍔をつけて、接合面積をより大きくしてもよい。このようにして基体1に接地端子8を接合することによって接続端子4を外部電気回路に接続した際には、基体1が接地導体としても機能する。   A ground terminal 8 is joined to the lower surface of the substrate 1. The ground terminal 8 is manufactured in the same manner as the signal terminal 4 and is bonded to the lower surface of the base 1 using a brazing material or the like. In order to facilitate positioning and improve the bonding strength, a hole may be formed in advance on the lower surface of the substrate 1, and the ground terminal 8 may be inserted into the hole for bonding. For the same reason, as in the example shown in FIGS. 3 to 9, the grounding terminal 8 may be made to be in contact with the lower surface of the base 1 to increase the bonding area. When the connection terminal 4 is connected to the external electric circuit by joining the ground terminal 8 to the base body 1 in this way, the base body 1 also functions as a ground conductor.

絶縁性部材9の配置は、図7に示す例のように、小径部2bの内面と信号端子4との間に充填して配置してもよいし、図8に示す例のように、小径部2bの内面および信号端子4の小径部2b内に位置する部分の外面の少なくとも一方を被覆するように配置してもよい。あるいは、図9に示す例のように、小径部2bの長さ方向の一部において(小径部2bの厚みより小さい範囲で)小径部2bの内面と信号端子4との間を充填しても、信号端子4と基体1(の小径部2bの内壁)とは接触することがなく、絶縁性が保たれるのでよい。小径部2bの長さ方向の全域において信号端子4のインピーダンスを整合させるには、小径部2bの長さ方向で小径部2bの内面と信号端子4との間の静電容量が同じであるのがよいので、小径部2bの内面と信号端子4との間に絶縁性部材9を充填して配置する場合は、図7に示す例のように、小径部2bの長さ方向の全域で充填するのがよい。同様に、小径部2bの内面や信号端子4の外面を絶縁性部材9で被覆する場合は、その厚みは小径部2b内で一定にするのがよい。図9に示す例のように、小径部2bの長さ方向の一
部において小径部2bの内面と信号端子4との間を充填して絶縁性部材9を配置する場合は、小径部2bの長さ方向の平均でインピーダンスが整合するように、絶縁性部材9の比誘電率に応じた長さ(厚み)で充填すればよい。また、小径部2bの内面と信号端子4との間に絶縁性部材9を充填すると、電子装置を外部回路基板へ実装する際に、信号端子4が変形するなどして小径部2b内における信号端子4の位置がずれてインピーダンスがずれてしまうことがない。
The insulating member 9 may be disposed between the inner surface of the small diameter portion 2b and the signal terminal 4 as in the example shown in FIG. 7, or the small diameter as in the example shown in FIG. You may arrange | position so that at least one of the inner surface of the part 2b and the outer surface of the part located in the small diameter part 2b of the signal terminal 4 may be coat | covered. Alternatively, as shown in the example shown in FIG. 9, the gap between the inner surface of the small diameter portion 2b and the signal terminal 4 may be filled in a part of the small diameter portion 2b in the length direction (in a range smaller than the thickness of the small diameter portion 2b). The signal terminal 4 and the base 1 (the inner wall of the small diameter portion 2b) do not come into contact with each other, and the insulating property may be maintained. In order to match the impedance of the signal terminal 4 in the entire length direction of the small diameter portion 2b, the capacitance between the inner surface of the small diameter portion 2b and the signal terminal 4 is the same in the length direction of the small diameter portion 2b. Therefore, when the insulating member 9 is filled between the inner surface of the small-diameter portion 2b and the signal terminal 4, it is filled over the entire length direction of the small-diameter portion 2b as shown in FIG. It is good to do. Similarly, when the inner surface of the small-diameter portion 2b and the outer surface of the signal terminal 4 are covered with the insulating member 9, the thickness is preferably constant in the small-diameter portion 2b. As in the example shown in FIG. 9, when the insulating member 9 is disposed by filling the space between the inner surface of the small diameter portion 2 b and the signal terminal 4 in a part of the small diameter portion 2 b in the length direction, What is necessary is just to fill with the length (thickness) according to the dielectric constant of the insulating member 9 so that impedance may be matched in the average of a length direction. Further, if the insulating member 9 is filled between the inner surface of the small diameter portion 2b and the signal terminal 4, the signal terminal 4 is deformed when the electronic device is mounted on the external circuit board. The position of the terminal 4 is not shifted and the impedance is not shifted.

絶縁性部材9は、基体1に蓋体6を接合する際等の熱によって溶融したり分解したりしないようなものから選択される。小径部2bの内面と信号端子4との間を絶縁性部材9で充填する場合は、その比誘電率が大きいと小径部2bの径を大きくしなければならず、基体1と蓋体9との接合部からの距離が近くなって蓋体9を接合する際の熱の影響を受けるので、比誘電率の小さい、4フッ化エチレン樹脂(比誘電率:約2.0),ポリフェニルエ
ーテル樹脂(比誘電率:約2.7),シクロオレフィン樹脂(比誘電率:約2.4)等の樹脂を用いる。絶縁性部材9を、小径部2bの内面および信号端子4の小径部2b内に位置する部分の外面の少なくとも一方を被覆して配置する場合は、小径部2bの内面と信号端子4との間には空間が形成されてその部分の比誘電率は小さいので、上述したような樹脂以外にも、それより比誘電率が大きい、封止材3と同様のものを用いることができる。小径部2bの長さ方向の一部において小径部2bの内面と信号端子4との間を充填して絶縁性部材9を配置する場合も同様である。
The insulating member 9 is selected from those that are not melted or decomposed by heat such as when the lid 6 is joined to the base 1. When the space between the inner surface of the small diameter portion 2b and the signal terminal 4 is filled with the insulating member 9, if the relative dielectric constant is large, the diameter of the small diameter portion 2b must be increased. Because of the influence of heat when joining the lid body 9 as the distance from the joint portion becomes smaller, a tetrafluoroethylene resin (relative dielectric constant: about 2.0), a polyphenyl ether resin (relative dielectric constant: about 2.0) having a small relative dielectric constant A resin such as a relative dielectric constant: about 2.7) or a cycloolefin resin (relative dielectric constant: about 2.4) is used. In the case where the insulating member 9 is disposed so as to cover at least one of the inner surface of the small diameter portion 2 b and the outer surface of the portion located in the small diameter portion 2 b of the signal terminal 4, it is between the inner surface of the small diameter portion 2 b and the signal terminal 4. Since the space is formed and the relative dielectric constant of the portion is small, the same material as the sealing material 3 having a larger relative dielectric constant can be used in addition to the resin as described above. The same applies to the case where the insulating member 9 is disposed by filling the space between the inner surface of the small diameter portion 2b and the signal terminal 4 in a part of the small diameter portion 2b in the length direction.

絶縁性部材9として比誘電率が2.0である4フッ化エチレン樹脂を用いた場合は、図7
に示す例のように、小径部2bの内面と信号端子4との間に絶縁性部材9を充填し、信号端子4の外径が0.25mmのものを用いると、特性インピーダンスを50Ωとするには、小径部2bの径は0.8mmとなる。図8に示す例のよう、同じ絶縁性部材9で小径部2bの内
面を被覆する場合は、その厚みを0.025mmとして、信号端子4の外径が0.25mmのもの
を用いると、特性インピーダンスを50Ωとするには、小径部2bの径は0.6mmとなる。
また、図9に示す例のように、長さが0.5mmの小径部2bに対して小径部2bの長さ方
向の厚みが0.2mmである円盤状の絶縁性部材9を配置して(絶縁性部材9を小径部2b
の内面と信号端子4との間のうちの小径部2bの長さ方向の0.2mmだけ充填して)、信
号端子4の外径が0.25mmのものを用いると、小径部2bの長さ方向の平均の特性インピーダンスを50Ωとするには、小径部2bの径は0.64mmとなる。
When a tetrafluoroethylene resin having a relative dielectric constant of 2.0 is used as the insulating member 9, FIG.
When the insulating member 9 is filled between the inner surface of the small-diameter portion 2b and the signal terminal 4 and the signal terminal 4 has an outer diameter of 0.25 mm, the characteristic impedance is 50Ω. The diameter of the small diameter portion 2b is 0.8 mm. When covering the inner surface of the small diameter portion 2b with the same insulating member 9 as in the example shown in FIG. 8, if the thickness is 0.025 mm and the signal terminal 4 has an outer diameter of 0.25 mm, the characteristic impedance is In order to make it 50Ω, the diameter of the small diameter portion 2b is 0.6 mm.
Further, as in the example shown in FIG. 9, a disk-shaped insulating member 9 having a thickness of 0.2 mm in the length direction of the small diameter portion 2b is arranged with respect to the small diameter portion 2b having a length of 0.5 mm (insulation). Member 9 with small diameter portion 2b
If the outer diameter of the signal terminal 4 is 0.25 mm, the length direction of the small diameter portion 2b is filled with 0.2 mm in the length direction of the small diameter portion 2b. In order to set the average characteristic impedance of 50Ω to 50Ω, the diameter of the small diameter portion 2b is 0.64 mm.

また、絶縁性部材9として比誘電率が5.0であるガラスを用いた場合は、図8に示す例
のように、小径部2bの内面を絶縁性部材9で被覆する場合は、その厚みを0.025mmと
して、信号端子4の外径が0.25mmのものを用いると、特性インピーダンスを50Ωとするには、小径部2bの径は0.62mmとなる。同じ絶縁性部材9を用いて、図9に示す例のように、長さが0.5mmの小径部2bに対して小径部2bの長さ方向に0.2mmの厚みの円盤状の絶縁性部材9を配置して、外径が0.25mmの信号端子4を用いると、小径部2bの長さ方向の平均の特性インピーダンスを50Ωとするには、小径部2bの径は0.73mmとなる。
When glass having a relative dielectric constant of 5.0 is used as the insulating member 9, when the inner surface of the small diameter portion 2b is covered with the insulating member 9 as in the example shown in FIG. If the outer diameter of the signal terminal 4 is 0.25 mm, the diameter of the small diameter portion 2b is 0.62 mm in order to set the characteristic impedance to 50Ω. Using the same insulating member 9, as in the example shown in FIG. 9, a disc-shaped insulating member 9 having a thickness of 0.2 mm in the length direction of the small diameter portion 2b with respect to the small diameter portion 2b having a length of 0.5 mm. When the signal terminal 4 having an outer diameter of 0.25 mm is used and the average characteristic impedance in the length direction of the small diameter portion 2b is 50Ω, the diameter of the small diameter portion 2b is 0.73 mm.

絶縁性部材9を配置するには、絶縁性部材9がガラスから成る場合であれば、封止材3と同様にして、あるいはガラス粉末に適当な溶剤やバインダーを加えて作製したガラスペーストを小径部2bの内面に塗布したり充填したりしてから加熱・冷却することによって溶融・凝固させればよい。絶縁性部材9が樹脂から成る場合であれば、液状の熱硬化性の樹脂を小径部2bの内面に塗布したり充填したりしてから加熱することによって硬化させてもよいし、小径部2bの内径および信号端子4の外形に応じた形状に成型したものを小径部2bに嵌め込み、必要に応じて接着剤で固定すればよい。   In order to dispose the insulating member 9, if the insulating member 9 is made of glass, a glass paste prepared by adding an appropriate solvent or binder to the glass powder in the same manner as the sealing material 3 or having a small diameter is used. What is necessary is just to make it melt and solidify by heating and cooling after apply | coating or filling the inner surface of the part 2b. If the insulating member 9 is made of a resin, it may be cured by applying a liquid thermosetting resin on the inner surface of the small-diameter portion 2b, filling it, and then heating, or the small-diameter portion 2b. What is necessary is just to fit what was shape | molded in the shape according to the internal diameter of this, and the external shape of the signal terminal 4 in the small diameter part 2b, and to fix with an adhesive agent as needed.

また、貫通孔2中への信号端子4の封止材3による固定時や信号端子4と回路基板5a
との接合時に信号端子4の位置がずれてしまうと、小径部2b内においてインピーダンスがずれてしまうので、信号端子4の固定や信号端子4と回路基板5aとの接合の前に、小径部2bの長さ方向の一部または全部において小径部2bの内面と信号端子4との間に絶縁性部材9が充填するのがよい。
Further, when the signal terminal 4 is fixed in the through-hole 2 by the sealing material 3, or the signal terminal 4 and the circuit board 5a.
If the position of the signal terminal 4 is shifted at the time of bonding, the impedance is shifted in the small diameter portion 2b. Therefore, before the signal terminal 4 is fixed or the signal terminal 4 and the circuit board 5a are bonded, the small diameter portion 2b. The insulating member 9 is preferably filled between the inner surface of the small diameter portion 2b and the signal terminal 4 in a part or all of the length direction.

このような本発明の電子部品搭載用パッケージの搭載部1aに電子部品5を搭載するとともに、基体1の蓋体接合部1bに蓋体6を接合することにより、本発明の電子装置となる。   By mounting the electronic component 5 on the mounting portion 1a of the electronic component mounting package of the present invention and joining the lid body 6 to the lid joint portion 1b of the base 1, the electronic device of the present invention is obtained.

電子部品搭載用パッケージに電子部品5を搭載して電気的に接続するには、上述したように、図1に示す例のように基体1の上面に直接電子部品5を搭載して接続する方法や、図2に示す例のように回路基板5aを介して電子部品5を搭載して接続する方法などがある。   In order to mount and electrically connect the electronic component 5 to the electronic component mounting package, as described above, a method of mounting and connecting the electronic component 5 directly on the upper surface of the base 1 as in the example shown in FIG. Alternatively, there is a method of mounting and connecting the electronic component 5 via the circuit board 5a as in the example shown in FIG.

電子部品5としては、LD(レーザーダイオード)やPD(フォトダイオ−ド)等の光半導体素子,半導体集積回路素子を含む半導体素子,水晶振動子や弾性表面波素子等の圧電素子,圧力センサー素子,容量素子,抵抗器等が挙げられる。   Examples of the electronic component 5 include optical semiconductor elements such as LD (laser diode) and PD (photodiode), semiconductor elements including semiconductor integrated circuit elements, piezoelectric elements such as crystal resonators and surface acoustic wave elements, and pressure sensor elements. , Capacitive elements, resistors and the like.

回路基板5aは、酸化アルミニウム(アルミナ:Al)質焼結体,窒化アルミニウム(AlN)質焼結体等のセラミックス絶縁材料等から成る絶縁基板に配線導体が形成されたものである。絶縁基板が例えば酸化アルミニウム質焼結体から成る場合であれば、まずアルミナ(Al)やシリカ(SiO),カルシア(CaO),マグネシア(MgO)等の原料粉末に適当な有機溶剤,溶媒を添加混合して泥漿状とし、これを周知のドクターブレード法やカレンダーロール法等によってシート状に成形してセラミックグリーンシート(以下、グリーンシートともいう)を得る。その後、グリーンシートを所定形状に打ち抜き加工するとともに必要に応じて複数枚積層し、これを約1600℃の温度で焼成することによって製作される。 The circuit board 5a is obtained by forming a wiring conductor on an insulating substrate made of a ceramic insulating material such as an aluminum oxide (alumina: Al 2 O 3 ) sintered body or an aluminum nitride (AlN) sintered body. If the insulating substrate is made of, for example, an aluminum oxide sintered body, first, an organic solvent suitable for a raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO), etc. , A solvent is added and mixed to form a slurry, which is formed into a sheet by a known doctor blade method, calendar roll method, or the like to obtain a ceramic green sheet (hereinafter also referred to as a green sheet). Thereafter, the green sheet is punched into a predetermined shape, and a plurality of sheets are laminated as necessary, and the green sheet is fired at a temperature of about 1600 ° C.

配線導体は、例えば、図4〜図6に示す例の回路基板5aでは、絶縁基板の上面には信号端子4・4を接続するための端子用導体と、電子部品5を搭載するとともに電子部品5の下面の接地電極を接続するための接地用導体とが形成され、下面には基体1に搭載して接続するための搭載用導体が形成され、接地用導体と搭載用導体とは、絶縁基板の側面に形成された、または絶縁基板を貫通して形成された接続導体によって接続される。このような配線導体は、電子部品5によりその接続が異なるので、それに応じて形成されるものである。また、電子部品5と配線導体とは例えばボンディングワイヤにより接続されるが、このボンディングワイヤを短くすることで信号の伝送損失を少なくするために、例えば図5に示す例のように端子用導体を屈曲した形状として、ボンディングワイヤの接続位置が電子部品5にできるだけ近くなるようにするのが好ましい。   For example, in the circuit board 5a of the example shown in FIGS. 4 to 6, the wiring conductor has the terminal conductor for connecting the signal terminals 4 and 4 and the electronic component 5 mounted on the upper surface of the insulating substrate. 5 is formed with a grounding conductor for connecting the ground electrode on the lower surface, and a mounting conductor for mounting on the base 1 is formed on the lower surface. The grounding conductor and the mounting conductor are insulated from each other. They are connected by connection conductors formed on the side surfaces of the substrate or formed through the insulating substrate. Such a wiring conductor is formed in accordance with the connection of the electronic component 5 depending on the connection. In addition, the electronic component 5 and the wiring conductor are connected by, for example, a bonding wire. In order to reduce the signal transmission loss by shortening the bonding wire, for example, a terminal conductor is used as shown in FIG. It is preferable that the connection position of the bonding wire be as close as possible to the electronic component 5 as a bent shape.

なお、端子用導体を屈曲させる場合には、例えば図4〜図6に示す例のように、屈曲角度が90°より大きくなるように段階的に屈曲させたり、屈曲部の角の部分に丸みをつけたりすると、屈曲部での反射による高周波の損失を少なくすることができるので好ましい。段階的に屈曲させる場合は、屈曲角度を120°以上とすると損失がより少なくなるので好
ましい。また、図4〜図6に示す例では屈曲部の外側だけを段階的に屈曲させているが、屈曲部の内側も同様に段階的に屈曲させたり丸みをつけたりするのがより好ましい。
When the terminal conductor is bent, for example, as shown in FIGS. 4 to 6, it is bent stepwise so that the bending angle is larger than 90 °, or the corner of the bent portion is rounded. It is preferable to add a mark since the loss of high frequency due to reflection at the bent portion can be reduced. In the case of bending stepwise, it is preferable to set the bending angle to 120 ° or more because loss is reduced. Further, in the example shown in FIGS. 4 to 6, only the outer side of the bent portion is bent stepwise, but it is more preferable that the inner side of the bent portion is bent stepwise and rounded similarly.

配線導体の形成方法は、絶縁基板と同時焼成で、あるいは絶縁基体を作製した後に金属メタライズを形成する周知の方法や、絶縁基板を作製した後に蒸着法やフォトリソグラフィ法によって形成する方法がある。電子装置が小型であり、それに搭載される回路基板5aはさらに小さいので、配線導体は微細なものとなり、また配線導体と信号端子4・4と
の位置合わせ精度を高めるためには蒸着法やフォトリソグラフィ法によって形成する方法が好ましく、この場合は、必要に応じて絶縁基板の主面に研磨加工を施す場合もある。
As a method for forming the wiring conductor, there are a well-known method of forming metal metallization by co-firing with an insulating substrate or after forming an insulating base, and a method of forming the insulating substrate by vapor deposition or photolithography after forming the insulating substrate. Since the electronic device is small and the circuit board 5a mounted on the electronic device is smaller, the wiring conductor is fine, and in order to increase the alignment accuracy between the wiring conductor and the signal terminals 4 and 4, vapor deposition or photo A method of forming by a lithography method is preferable. In this case, the main surface of the insulating substrate may be polished as necessary.

以下、配線導体を蒸着法やフォトリソグラフィ法により形成する場合について詳細に説明する。配線導体は、例えば密着金属層,拡散防止層および主導体層が順次積層された3層構造の導体層から成る。   Hereinafter, the case where the wiring conductor is formed by vapor deposition or photolithography will be described in detail. The wiring conductor is composed of a conductor layer having a three-layer structure in which, for example, an adhesion metal layer, a diffusion prevention layer, and a main conductor layer are sequentially laminated.

密着金属層は、セラミックス等から成る絶縁基板との密着性を良好とするという観点からは、チタン(Ti),クロム(Cr),タンタル(Ta),ニオブ(Nb),ニッケル−クロム(Ni−Cr)合金,窒化タンタル(TaN)等の熱膨張率がセラミックスと近い金属のうちの少なくとも1種より成るのが好ましく、その厚みは0.01〜0.2μm程度
が好ましい。密着金属層の厚みが0.01μm未満では、密着金属層を絶縁基板に強固に密着することが困難となる傾向があり、0.2μmを超えると、成膜時の内部応力によって密着
金属層が絶縁基板から剥離し易くなる傾向がある。
From the standpoint of improving the adhesion with an insulating substrate made of ceramics or the like, the adhesion metal layer is made of titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), nickel-chromium (Ni- It is preferable that the thermal expansion coefficient is at least one of metals close to that of ceramics, such as a Cr) alloy and tantalum nitride (Ta 2 N), and the thickness is preferably about 0.01 to 0.2 μm. If the thickness of the adhesion metal layer is less than 0.01 μm, it tends to be difficult to firmly adhere the adhesion metal layer to the insulating substrate. If the thickness exceeds 0.2 μm, the adhesion metal layer is insulated by the internal stress during film formation. It tends to become easy to peel off.

拡散防止層は、密着金属層と主導体層との相互拡散を防ぐという観点からは、白金(Pt),パラジウム(Pd),ロジウム(Rh),ニッケル(Ni),Ni−Cr合金,Ti−W合金等の熱伝導性の良好な金属のうち少なくとも1種より成ることが好ましく、その厚みは0.05〜1μm程度が好ましい。拡散防止層の厚みが0.05μm未満では、ピンホール等の欠陥が発生して拡散防止層としての機能を果たしにくくなる傾向があり、1μmを超えると、成膜時の内部応力により拡散防止層が密着金属層から剥離し易く成る傾向がある。なお、拡散防止層にNi−Cr合金を用いる場合は、Ni−Cr合金は絶縁基板との密着性が良好なため、密着金属層を省くことも可能である。   From the viewpoint of preventing mutual diffusion between the adhesion metal layer and the main conductor layer, the diffusion preventing layer is platinum (Pt), palladium (Pd), rhodium (Rh), nickel (Ni), Ni—Cr alloy, Ti— It is preferably made of at least one metal having good thermal conductivity such as W alloy, and the thickness is preferably about 0.05 to 1 μm. If the thickness of the diffusion prevention layer is less than 0.05 μm, defects such as pinholes tend to be generated, making it difficult to perform the function as the diffusion prevention layer. If the thickness exceeds 1 μm, the diffusion prevention layer is caused by internal stress during film formation. There is a tendency to easily peel from the adhesion metal layer. When a Ni—Cr alloy is used for the diffusion preventing layer, the adhesion metal layer can be omitted because the Ni—Cr alloy has good adhesion to the insulating substrate.

主導体層は、電気抵抗の小さい金(Au),Cu,Ni,銀(Ag)の少なくとも1種より成ることが好ましく、その厚みは0.1〜5μm程度が好ましい。主導体層の厚みが0.1μm未満では、電気抵抗が大きなものとなり回路基板5aの配線導体に要求される電気抵抗を満足できなくなる傾向があり、5μmを超えると、成膜時の内部応力により主導体層が拡散防止層から剥離し易く成る傾向がある。また、Cuは酸化し易いので、その上にNiおよびAuからなる保護層を被覆してもよい。   The main conductor layer is preferably made of at least one of gold (Au), Cu, Ni and silver (Ag) having a low electric resistance, and the thickness is preferably about 0.1 to 5 μm. If the thickness of the main conductor layer is less than 0.1 μm, the electric resistance tends to be large and the electric resistance required for the wiring conductor of the circuit board 5a tends to be unsatisfactory. If the thickness exceeds 5 μm, it is driven by internal stress during film formation. There is a tendency that the body layer is easily peeled off from the diffusion preventing layer. Further, since Cu is easily oxidized, a protective layer made of Ni and Au may be coated thereon.

電子部品5の電子部品搭載用パッケージや回路基板5aへの搭載、あるいは回路基板5aの電子部品搭載用パッケージへの搭載は、低融点ろう材により固定することにより行なえばよい。例えば、回路基板5aを基体1上に搭載した後に電子部品5を回路基板5a上に搭載する場合は、回路基板5aの固定には金−錫(Au−Sn)合金や金−ゲルマニウム(Au−Ge)合金をろう材として用い、電子部品5の固定には、これらより融点の低い錫−銀(Sn−Ag)合金や錫−銀−銅(Sn−Ag−Cu)合金のろう材や、融点より低い温度で硬化可能な、Agエポキシ等の樹脂製の接着剤を用いればよい。また、電子部品5を回路基板5a上に搭載した後に回路基板5aを基体1上に搭載してもよく、その場合は上記とは逆に、回路基板5aを基体1上に搭載する際に用いるろう材の融点の方を低くすればよい。いずれの場合であっても、回路基板5a上や基体1の搭載部1a上にろう材ペーストを周知のスクリーン印刷法を用いて印刷したり、フォトリソグラフィ法によってろう材層を形成したり、低融点ろう材のプリフォームを載置するなどすればよい。   The electronic component 5 may be mounted on the electronic component mounting package or the circuit board 5a, or the circuit board 5a may be mounted on the electronic component mounting package by fixing with a low melting point brazing material. For example, when the electronic component 5 is mounted on the circuit board 5a after the circuit board 5a is mounted on the base body 1, a gold-tin (Au—Sn) alloy or gold-germanium (Au—) is used to fix the circuit board 5a. Ge) alloy is used as a brazing material, and for fixing the electronic component 5, a brazing material of a tin-silver (Sn-Ag) alloy or a tin-silver-copper (Sn-Ag-Cu) alloy having a lower melting point than these, A resin adhesive such as Ag epoxy that can be cured at a temperature lower than the melting point may be used. In addition, after mounting the electronic component 5 on the circuit board 5a, the circuit board 5a may be mounted on the base body 1. In this case, contrary to the above, it is used when mounting the circuit board 5a on the base body 1. The melting point of the brazing material may be lowered. In any case, a brazing material paste is printed on the circuit board 5a or the mounting portion 1a of the base body 1 by using a well-known screen printing method, a brazing material layer is formed by a photolithography method, A preform of a melting point brazing material may be placed.

蓋体6は、上面視で基体1の上面の外周領域の蓋体接合部1bの形状に沿った外形で、基体1の上面の搭載部1aに搭載された電子部品5を覆うような空間を有する形状のものである。電子部品5と対向する部分に光を透過させる窓を設けてもよいし、窓に換えて、または窓に加えて光ファイバおよび戻り光防止用の光アイソレータを接合したものでもよい。   The lid body 6 has an outer shape along the shape of the lid joint portion 1b in the outer peripheral area of the upper surface of the base body 1 as viewed from above, and has a space that covers the electronic component 5 mounted on the mounting portion 1a on the upper surface of the base body 1. It has a shape. A window that transmits light may be provided in a portion facing the electronic component 5, or an optical fiber and an optical isolator for preventing return light may be joined in place of or in addition to the window.

蓋体6は、Fe−Ni−Co合金やFe−Ni合金、Fe−Mn合金等の金属から成り、これらの板材にプレス加工や打ち抜き加工等の周知の金属加工方法を施すことによって作製される。蓋体6は、基体1の材料と同程度の熱膨張係数を有するものが好ましく、基体1の材料と同じものを用いるのがより好ましい。蓋体6が窓を有する場合は、電子部品5と対向する部分に孔を設けたものに、平板状やレンズ状のガラス製の窓部材を低融点ガラスなどにより接合する。   The lid 6 is made of a metal such as an Fe—Ni—Co alloy, an Fe—Ni alloy, or an Fe—Mn alloy, and is produced by subjecting these plate materials to a known metal working method such as press working or punching. . The lid 6 preferably has the same thermal expansion coefficient as the material of the base 1, and more preferably the same as the material of the base 1. When the lid 6 has a window, a plate-like or lens-like glass window member is joined to a member provided with a hole in the portion facing the electronic component 5 with a low melting point glass or the like.

蓋体6の基体1の蓋体接合部1bへの接合は、シーム溶接やYAGレーザ溶接等の溶接またはAu−Snろう材等のろう材によるろう接により行なわれる。   The lid 6 is joined to the lid joint 1b of the base body 1 by welding such as seam welding or YAG laser welding or brazing with a brazing material such as an Au-Sn brazing material.

1・・・・・基体
1a・・・・搭載部
1b・・・・蓋体接合部
1c・・・・切欠き
1d・・・・溝
2・・・・・貫通孔
2a・・・・大径部
2b・・・・小径部
2c・・・・段差面
3・・・・・封止材
4・・・・・信号端子
5・・・・・電子部品
5a・・・・回路基板
6・・・・・蓋体
7・・・・・ボンディングワイヤ
8・・・・・接地端子
9・・・・・絶縁性部材
DESCRIPTION OF SYMBOLS 1 ... Base 1a ... Mounting part 1b ... Lid joint part 1c ... Notch 1d ... Groove 2 ... Through-hole 2a ... Large Diameter portion 2b ··· Small diameter portion 2c ··· Stepped surface 3 ··· Sealing material 4 ··· Signal terminal 5 ··· Electronic component 5a ··· Circuit board 6 ··· .... Lid 7 ... Bonding wire 8 ... Grounding terminal 9 ... Insulating material

Claims (4)

上面の外周領域に溶接またはろう接により蓋体を接合する蓋体接合部を有するとともに、該蓋体接合部の内側領域に、上面に電子部品の搭載部を、および上面から下面にかけて貫通する複数の貫通孔を有する基体と、前記貫通孔に充填された封止材を貫通して固定された信号端子とを具備した電子部品搭載用パッケージであって、前記貫通孔は前記基体の下面側の大径部と上面側の小径部とを有しており、前記封止材は前記貫通孔の大径部に前記小径部側の段差面との間に隙間を設けて充填されていることを特徴とする電子部品搭載用パッケージ。 A plurality of parts having a lid joint part for joining the lid body by welding or brazing to the outer peripheral area of the upper surface, penetrating from the upper surface to the lower surface in the inner region of the lid joint part, the electronic component mounting part on the upper surface An electronic component mounting package comprising a base having a through hole and a signal terminal fixed through the sealing material filled in the through hole, the through hole being provided on a lower surface side of the base. It has a large diameter portion and a small diameter portion on the upper surface side, and the sealing material is filled with a gap between the large diameter portion of the through hole and the step surface on the small diameter portion side. A package for mounting electronic components. 前記段差面が前記大径部から前記小径部に向かって傾斜していることを特徴とする請求項1記載の電子部品搭載用パッケージ。 2. The electronic component mounting package according to claim 1, wherein the stepped surface is inclined from the large diameter portion toward the small diameter portion. 前記小径部の内面と前記信号端子との間に絶縁性部材が配置されていることを特徴とする請求項1または請求項2に記載の電子部品搭載用パッケージ。 The electronic component mounting package according to claim 1, wherein an insulating member is disposed between an inner surface of the small diameter portion and the signal terminal. 請求項1乃至請求項3のいずれかに記載の電子部品搭載用パッケージの前記搭載部に電子部品を搭載するとともに、前記基体の前記蓋体接合部に蓋体を接合したことを特徴とする電子装置。 An electronic component is mounted on the mounting portion of the electronic component mounting package according to any one of claims 1 to 3, and a lid is bonded to the lid bonding portion of the base. apparatus.
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