JP2010267968A - 有機電界効果トランジスタ - Google Patents
有機電界効果トランジスタ Download PDFInfo
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- 230000005669 field effect Effects 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 7
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 1
- 229910017119 AlPO Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical compound [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000154 gallium phosphate Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052588 hydroxylapatite Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- XYJRXVWERLGGKC-UHFFFAOYSA-D pentacalcium;hydroxide;triphosphate Chemical compound [OH-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O XYJRXVWERLGGKC-UHFFFAOYSA-D 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011031 topaz Substances 0.000 description 1
- 229910052853 topaz Inorganic materials 0.000 description 1
- 239000011032 tourmaline Substances 0.000 description 1
- 229910052613 tourmaline Inorganic materials 0.000 description 1
- 229940070527 tourmaline Drugs 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01—ELECTRIC ELEMENTS
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
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- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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Abstract
【構成】ソース電極6及びドレイン電極8間の半導体層10中に、導電性チャンネルに近接し、又は電気絶縁層20及び前記半導体層10に対して、ゲート電極22の反対側に位置する圧電層23を備え、該圧電層23は、前記ソース電極6及びドレイン電極8から、及び前記半導体層10から絶縁されている。
【選択図】図1
Description
−ソース及びドレイン電極、
−少なくとも前記ソース及びドレイン電極間に位置する有機半導体物質製の半導体層、
−ゲート電極、及び
−前記ゲート電極及び半導体層間に設置された電気絶縁層
を備えている。
ソース電極及びドレイン電極、
少なくとも前記ソース電極及びドレイン電極間に位置する、有機半導体物質製の半導体層、
電圧VGがゲート電極に印加されたときに、半導体層中の可動電荷キャリアの濃度を増加させて、前記ソース電極及びドレイン電極間の前記半導体層内に導電性チャンネルを形成する電界を生成させるのに適した前記ゲート電極、及び
前記ゲート電極及び前記半導体層間に位置する電気絶縁層を備える有機電界効果トランジスタにおいて、
前記ソース電極及びドレイン電極間の半導体層中に、前記ソース電極及びドレイン電極に並んで位置する導電性チャンネルに近接するか、又は前記電気絶縁層及び半導体層に対して、前記ゲート電極の反対側に位置する圧電層を更に備え、該圧電層は、前記ソース電極及びドレイン電極から、及び前記半導体層から絶縁されていることを特徴とする有機電界効果トランジスタを提供するものである。
−絶縁層が、前記圧電層と、前記ソース電極及びドレイン電極間に位置している。
−前記圧電層の長手方向の軸が、前記ソース電極及びドレイン電極の軸と実質的に平行である。
−前記圧電層の物質は、30%を超える電気機械結合係数を有する。
−前記圧電層の厚さは、少なくとも電極間スペース(C)の範囲内で可変である。
−前記圧電層は、少なくとも前記ソース電極及びドレイン電極まで広がっている。
−絶縁層は、少なくとも前記ソース電極及びドレイン電極まで広がっている。
−前記半導体層はp型であり、前記絶縁層の誘電率は3未満である。
−前記圧電層は、天然結晶、合成セラミックス又はポリマーの形態である。
−前記有機トランジスは、前記圧電層用の外部電力供給手段を更に備えている。
Claims (10)
- −ソース電極(6)及びドレイン電極(8)、
−少なくとも前記ソース電極(6)及びドレイン電極(8)間に位置する、有機半導体物質製の半導体層(10)、
−電圧VGがゲート電極(22)に印加されたときに、半導体層(10)中の可動電荷キャリアの濃度を増加させて、前記ソース電極(6)及びドレイン電極(8)間の前記半導体層(10)内に導電性チャンネルを形成する電界を生成させるために適した前記ゲート電極(22)、及び
前記ゲート電極(22)及び前記半導体層(10)間に位置する電気絶縁層(20)を備える有機電界効果トランジスタにおいて、
前記ソース電極(6)及びドレイン電極(8)間の半導体層(10)内に前記ソース電極(6)及びドレイン電極(8)に並んで位置する導電性チャンネルに近接し、又は前記電気絶縁層(20)及び半導体層(10)に対して、前記ゲート電極(22)の反対側に位置する圧電層(23)を更に備え、該圧電層(23)は、前記ソース電極(6)及びドレイン電極(8)から、及び前記半導体層(10)から絶縁されていることを特徴とする有機電界効果トランジスタ。 - 絶縁層(26)は、前記圧電層(23)と、前記ソース電極(6)及びドレイン電極(8)間に位置している請求項1に記載の有機電界効果トランジスタ。
- 前記圧電層(23)の長手方向の軸(I−I)は、前記ソース電極(6)及びドレイン電極(8)の軸と実質的に平行である請求項1又は2に記載の有機電界効果トランジスタ。
- 前記圧電層(23)の物質は、30%を超える電気機械結合係数を有する請求項1から3までのいずれか1項に記載の有機電界効果トランジスタ。
- 前記圧電層(23)の厚さは、少なくとも電極間スペース(C)の範囲内で可変である請求項1から4までのいずれか1項に記載の有機電界効果トランジスタ。
- 前記圧電層(23)は、少なくとも前記ソース電極(6)及びドレイン電極(8)まで広がっている請求項1から5までのいずれか1項に記載の有機電界効果トランジスタ。
- 前記絶縁層(26)は、少なくとも前記ソース電極(6)およびドレイン電極(8)まで広がっている請求項6に記載の有機電界効果トランジスタ。
- 前記半導体層(10)はp型であり、前記絶縁層(26)の誘電率は3未満である請求項2から7までのいずれか1項に記載の有機電界効果トランジスタ。
- 前記圧電層(23)は、天然結晶、合成セラミックス又はポリマーの形態である請求項1から8までのいずれか1項に記載の有機電界効果トランジスタ。
- 前記圧電層(23)用の外部電力供給手段(11)を更に備える請求項1から9までのいずれか1項に記載の有機電界効果トランジスタ。
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FR0902338A FR2945669B1 (fr) | 2009-05-14 | 2009-05-14 | Transistor organique a effet de champ |
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JP2015116593A Division JP2015188106A (ja) | 2009-05-14 | 2015-06-09 | 有機電界効果トランジスタ |
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US (1) | US8314451B2 (ja) |
EP (1) | EP2251919B1 (ja) |
JP (2) | JP2010267968A (ja) |
KR (1) | KR20100123661A (ja) |
CN (1) | CN101924183B (ja) |
FR (1) | FR2945669B1 (ja) |
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CN104851971A (zh) * | 2015-05-28 | 2015-08-19 | 福州大学 | 一种基于压电材料有源层的tft结构及其制备方法 |
FR3045933B1 (fr) * | 2015-12-22 | 2018-02-09 | Soitec | Substrat pour un dispositif a ondes acoustiques de surface ou a ondes acoustiques de volume compense en temperature |
CN109557729B (zh) * | 2017-09-26 | 2022-02-15 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示装置 |
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FR2888990B1 (fr) * | 2005-07-22 | 2007-09-07 | Commissariat Energie Atomique | Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique |
FR2916305B1 (fr) * | 2007-05-15 | 2009-10-23 | Commissariat Energie Atomique | Dispositif a transistor a canal contraint. |
JP4544288B2 (ja) * | 2007-10-19 | 2010-09-15 | セイコーエプソン株式会社 | 半導体装置及び電子機器 |
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2009
- 2009-05-14 FR FR0902338A patent/FR2945669B1/fr not_active Expired - Fee Related
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2010
- 2010-05-10 EP EP10162459.1A patent/EP2251919B1/fr not_active Not-in-force
- 2010-05-11 US US12/777,452 patent/US8314451B2/en active Active
- 2010-05-13 JP JP2010110813A patent/JP2010267968A/ja active Pending
- 2010-05-14 TW TW099115593A patent/TWI438951B/zh not_active IP Right Cessation
- 2010-05-14 CN CN201010242126.1A patent/CN101924183B/zh not_active Expired - Fee Related
- 2010-05-14 KR KR1020100045673A patent/KR20100123661A/ko active Search and Examination
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2015
- 2015-06-09 JP JP2015116593A patent/JP2015188106A/ja not_active Withdrawn
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JP2005294300A (ja) * | 2004-03-31 | 2005-10-20 | Univ Of Tokyo | 非単結晶トランジスタ集積回路及びその製造方法 |
JP2006100520A (ja) * | 2004-09-29 | 2006-04-13 | Sony Corp | 有機電界効果半導体装置及びその製造方法、並びに有機半導体層及びその形成方法 |
JP2007184574A (ja) * | 2006-01-02 | 2007-07-19 | Samsung Sdi Co Ltd | 有機薄膜トランジスタ及び有機発光表示装置 |
JP2007250798A (ja) * | 2006-03-15 | 2007-09-27 | Seiko Epson Corp | 回路基板、電気光学装置および電子機器 |
Also Published As
Publication number | Publication date |
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US8314451B2 (en) | 2012-11-20 |
CN101924183B (zh) | 2014-12-17 |
EP2251919A2 (fr) | 2010-11-17 |
EP2251919B1 (fr) | 2017-12-20 |
KR20100123661A (ko) | 2010-11-24 |
JP2015188106A (ja) | 2015-10-29 |
EP2251919A3 (fr) | 2014-03-05 |
FR2945669A1 (fr) | 2010-11-19 |
TW201108484A (en) | 2011-03-01 |
FR2945669B1 (fr) | 2011-12-30 |
TWI438951B (zh) | 2014-05-21 |
US20100289015A1 (en) | 2010-11-18 |
CN101924183A (zh) | 2010-12-22 |
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