JP2010251559A - Electronic circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic circuit device capable of reducing thickness and dimensions while improving heat dissipation efficiency. <P>SOLUTION: The electronic circuit device 1 includes: a substrate 11 having a first surface 11A and a second surface 11B; a plurality of first leads 188 and 195 and second leads 181 or the like arranged on a side face of the substrate 11; a first electronic component (43 or the like) provided on part of the first surface 11A of the substrate 11; a second electronic component (5) provided on another part on the first surface 11A of the substrate 11, having a larger calorific value than that of the first electronic component and sealing a semiconductor element with a seal; a first heat radiating medium 91 having one of ends in contact on the seal of the second electronic component and having the other end connected with the first leads 188 and 195; and a resin seal 17. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an electronic circuit device, and more particularly to an electronic circuit device used as a power supply module having excellent heat dissipation characteristics.

  For example, a DC-DC converter is incorporated in a power supply unit of a general-purpose television. The DC-DC converter converts, for example, a DC voltage converted from a 100 V AC voltage for general home use into a DC voltage used for a control circuit unit, a drive circuit unit, and the like. The DC-DC converter finally generates a DC voltage of 12V or 24V.

  In developing general-purpose televisions such as liquid crystal televisions and plasma televisions that are becoming thinner and larger in screen, it is important to make power supply units thinner and smaller. As the power supply unit becomes thinner and smaller, the amount of heat generated by the voltage conversion of the electronic components constituting the power supply unit tends to increase, and it is necessary to improve the heat dissipation characteristics of the power supply unit.

  Patent Document 1 below discloses a power module that can solve such a problem. The power module includes an integrated circuit board, a plurality of semiconductor elements mounted on the integrated circuit board and connected to the conductive pattern on the integrated circuit board through wires, and a plurality of leads arranged on the side surface of the integrated circuit board. A terminal portion, an extension portion on a plurality of integrated circuit boards arranged at regular intervals on a semiconductor element, one end connected to the terminal portion, an integrated circuit board, a plurality of semiconductor elements, and a plurality of terminal portions The resin sealing part which covers is provided. The extension portion is used as a part of the lead and has a function of efficiently radiating heat generated by the operation of the semiconductor element to the outside of the resin sealing portion.

Japanese Patent Laid-Open No. 9-307031

  However, in the power module disclosed in Patent Document 1, the following points have not been considered.

In order to prevent a short circuit between a wire connecting each of the plurality of semiconductor elements of the power module and the conductive pattern of the integrated circuit board and an extension portion disposed on the plurality of semiconductor elements. In addition, it is necessary to separate them with a sufficient electrical distance. For this reason, the thickness of the resin sealing portion between the semiconductor element and the extension portion is increased, and the heat dissipation efficiency to the extension portion of the heat generated by the operation of the semiconductor element is reduced due to the presence of this resin sealing portion, It is difficult to sufficiently improve the heat dissipation characteristics of the power module. Furthermore, since the thickness of the resin sealing portion is increased as a whole, it is difficult to reduce the thickness and size of the power module.

  The present invention has been made to solve the above problems. Accordingly, it is an object of the present invention to provide an electronic circuit device that can be reduced in thickness and size while improving heat dissipation efficiency.

  In order to solve the above-described problems, according to an embodiment of the present invention, there is provided an electronic circuit device, comprising: a substrate having a first surface and a second surface opposite to the first surface; A plurality of first and second leads, a first electronic component disposed on a portion of the first surface of the substrate, and another portion of the first surface of the substrate. Disposed, the second electronic component having a larger calorific value than the first electronic component and having the semiconductor element sealed by the sealing body, and one end contacting the sealing body of the second electronic component, A first heat radiator having the other end connected to the first lead, a substrate, an inner portion of the first lead and the second lead, a first electronic component, a second electronic component, and a first heat radiator; The resin sealing body which seals each of these is provided.

  Further, in the electronic circuit device, the first electronic component is a capacitor, the second electronic component is a diode, and the first heat dissipator is formed between the upper surface of the second electronic component and the upper surface of the first electronic component. It is preferable to be disposed between them.

  In the electronic circuit device, an electronic circuit system including the first electronic component and the second electronic component in a region separated from the second electronic component and the first heat radiator on the first surface of the substrate. It is preferable to further include a temperature detection unit for cutting off the power supplied to the electronic circuit system when the temperature reaches a certain temperature.

  Further, in the electronic circuit device, a heat dissipating column embedded immediately below the second electronic component of the substrate, and a second heat dissipating member disposed on the second surface of the substrate and thermally connected to the heat dissipating column It is preferable to further comprise.

  In the electronic circuit device, the first heat radiator, the second heat radiator disposed on the second surface of the substrate so as to face the first heat radiator, and the side surface of the substrate It is preferable to further include a heat radiating body having one end thermally connected to the first heat radiating body and a third heat radiating body having the other end thermally connected to the second heat radiating body.

  ADVANTAGE OF THE INVENTION According to this invention, the electronic circuit apparatus which can implement | achieve thickness reduction and size reduction can be provided, improving a thermal radiation efficiency.

It is principal part expanded sectional drawing (sectional drawing cut | disconnected by the F1-F1 cutting line shown in FIG. 2) of the electronic circuit apparatus which concerns on Example 1 of this invention. 1 is a perspective view of an electronic circuit device according to a first embodiment. FIG. 3 is a top view of the electronic circuit device shown in FIG. 2. FIG. 3 is a bottom view of the electronic circuit device shown in FIG. 2. FIG. 3 is an electronic circuit system block diagram of the electronic circuit device shown in FIG. 2. (A) It is a principal part perspective view which shows the temperature profile on the board | substrate of the electronic circuit device which concerns on a comparative example. (B) is a perspective view which shows the temperature profile of the sealing body of the electronic circuit device which concerns on a comparative example. (A) It is a principal part perspective view which shows the temperature profile on the board | substrate of the electronic circuit apparatus which concerns on Example 1. FIG. FIG. 5B is a perspective view illustrating a temperature profile of the sealing body of the electronic circuit device according to the first embodiment. (A) It is a principal part perspective view which shows the temperature profile on the board | substrate of the electronic circuit apparatus which concerns on Example 1. FIG. FIG. 5B is a perspective view illustrating a temperature profile of the sealing body of the electronic circuit device according to the first embodiment. (A) It is a principal part perspective view which shows the temperature profile on the board | substrate of the electronic circuit device which concerns on the modification of Example 1. FIG. (B) is a perspective view showing a temperature profile of a sealing body of an electronic circuit device according to a modification of Example 1. FIG. It is a principal part expanded sectional view of the electronic circuit apparatus which concerns on Example 2 of this invention. It is a principal part expanded sectional view of the electronic circuit device which concerns on Example 3 of this invention. (A) It is a principal part perspective view which shows the temperature profile on the board | substrate of the electronic circuit apparatus which concerns on Example 2. FIG. FIG. 6B is a perspective view illustrating a temperature profile of the sealing body of the electronic circuit device according to the second embodiment. (A) It is a principal part perspective view which shows the temperature profile on the board | substrate of the electronic circuit apparatus which concerns on Example 3. FIG. (B) is a perspective view showing a temperature profile of a sealing body of an electronic circuit device according to Example 3. FIG.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, the drawings are schematic and different from actual ones. In addition, there may be a case where the dimensional relationships and ratios are different between the drawings.

  Further, the following embodiments exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention specifies the arrangement of each component as follows. It is not what you do. The technical idea of the present invention can be variously modified within the scope of the claims.

Example 1
The first embodiment of the present invention describes an example in which the present invention is applied to an electronic circuit device as a power supply module incorporated in a power supply unit of a general-purpose television. Here, the electronic circuit device is a DC-DC converter.

[Electronic circuit system block configuration of electronic circuit device]
As illustrated in FIG. 5, the electronic circuit device 1 according to the first embodiment is configured with a DC-DC converter as one power supply module. The electronic circuit device 1 includes a transistor unit 2, a first transformer 3, capacitors 41, 42, and 43 (first electronic components), a diode (second electronic component) 5, a control unit 6, and a second transformer 7. And a plurality of electronic components of the temperature detection unit 8. In the electronic circuit device 1, input terminals Vin + and Vin−, output terminals Vout + and Vout−, a DC voltage terminal DCIN, a switching signal terminal ON / OFF, and an output voltage adjustment terminal TRM are arranged.

  The transistor section 2 includes a first insulated gate transistor (hereinafter simply referred to as an IGFET (Insulated Gate Field Effect Transistor)) 21, a second IGFET 22, and diodes 23 and 24. Here, IGFET is used in the meaning including both MOSFET (metal oxide semiconductor field effect transistor) and MISFET (metal insulated semiconductor field effect transistor). The transistor unit 2 is not limited to an IGFET as long as it has an equivalent function, and for example, an IGBT (Insulated Gate Bipolar Transistor), a bipolar transistor, or the like can be used.

  One end of the main electrode of the first IGFET 21 is connected to the input terminal Vin +, the other end of the main electrode is connected to one end of the main electrode of the second IGFET 22, and the gate electrode is connected to the second transformer 7. A diode 23 is provided in the reverse bias direction between one end and the other end of the main electrode of the first IGFET 21. The other end of the main electrode of the second IGFET 22 is connected to the input terminal Vin−, and the gate electrode is connected to the second transformer 7. A diode 24 is provided in the reverse bias direction between one end and the other end of the main electrode of the second IGFET 22. A capacitor 42 is inserted between the input terminals Vin + and Vin−.

  The first transformer 3 includes a primary winding (coil) 31, a secondary winding (coil) 32, and a core 33. One end of the primary winding 31 is connected to the output of the transistor unit 2, that is, the other end of the main electrode of the first IGFET 21 and one end of the main electrode of the second IGFET 22, and the other end is electrically connected in series with the capacitor 41. And connected to the input terminal Vin-. One end of the secondary winding 32 is connected to the output terminal Vout + with the diode 5 electrically connected in series, and the other end is connected to the output terminal Vout−.

  Between the output terminals Vout + and Vout−, each of the capacitor 43 and the temperature detecting unit 8 is electrically connected in parallel. The temperature detection unit 8 detects the temperature of the electronic circuit device 1 and outputs the detection result to the control unit 6. In the control unit 6, when a preset temperature rise is detected based on the detection result from the temperature detection unit 8, the control for stopping the operation of the transistor unit 2 through the second transformer 7, that is, this Control for stopping the operation of the electronic circuit system can be performed.

  Although not illustrated, the control unit 6 includes at least a control IC and a photocoupler. The control unit 6 controls the operation of the DC-DC converter of the electronic circuit device 1 based on a switching signal input from the switching signal terminal ON / OFF.

[Operation of electronic circuit device]
In the electronic circuit device 1 according to the first embodiment shown in FIG. 5, first, a DC voltage before conversion is applied between the input terminals Vin + and Vin−, and further, a DC voltage, for example, 12V is supplied to the DC voltage terminal DCIN. A switching signal (activation signal) of the electronic circuit device 1 is given to the terminals ON / OFF. When an ON signal is given to the switching signal terminal ON / OFF, the control unit 6 turns on the first IGFET 21 of the transistor unit 2 via the second transformer 7 and turns off the second IGFET 22. By the ON operation of the first IGFET 21, a direct current flows from the transistor unit 2 (the other end of the main electrode of the first IGFET 21) to the primary winding 31 of the first transformer 3. When a direct current flows through the primary winding 31, a direct current is generated in the secondary winding 32 due to electromagnetic induction. This DC voltage is output as a DC voltage after conversion between the output terminals Vout + and Vout−.

  In the electronic circuit device 1 according to the first embodiment, the DC voltage before conversion is, for example, 385V, and the DC voltage after conversion is, for example, 12V or 24V.

[Device structure of electronic circuit device]
As shown in FIGS. 1 to 4, the electronic circuit device 1 according to the first embodiment includes a substrate 11 having a first surface 11A and a second surface (back surface) 11B opposite to the first surface 11A. A plurality of first leads 188 and 195 and second leads 181 to 187 and 191 to 194 arranged on the side surface of the substrate 11, and a first disposed on a part of the first surface 11 A of the substrate 11. The electronic component (in the first embodiment, for example, the capacitor 43 other than the diode 5) and the other part on the first surface 11A of the substrate 11, and generates a larger amount of heat than the first electronic component. A second electronic component in which the semiconductor element is sealed with a sealing body (diode 5 in which the diode chip is sealed with an epoxy resin in the first embodiment) and an adhesive layer (on the sealing body of the second electronic component) One end is glued through (not shown) , The first radiator 91 having the other end connected to the first leads 188 and 195, the inner part of the substrate 11, the first leads 188 and 195, and the second leads 181 to 187 and 191 to 194, And a resin sealing body 17 that seals each of the first electronic component, the second electronic component, and the first heat radiator 91.

  That is, the electronic circuit device 1 is constructed as one power supply module in which the substrate 11 on which a plurality of electronic components are mounted is molded and packaged together with the plurality of electronic components by the resin sealing body 17.

[Substrate structure]
As shown in FIG. 1 to FIG. 4, the substrate 11 of the electronic circuit device 1 does not clearly show the structure, but the insulating base material, the surface of the insulating base material (the first surface 11A side), the back surface And a conductor disposed on at least one of the second surface 11B side. Although the number of stacked layers is not particularly limited, in Example 1, the substrate 11 has a single layer structure having one plate-like insulating base material. The substrate 11 may have a multilayer insulating substrate having two or more layers.

  The insulating base material of the board | substrate 11 is comprised by the glass epoxy resin often used for the printed wiring board in Example 1. FIG. Although not necessarily limited to this value, the substrate 11 has a rectangular planar shape in which the long side is set to 60 mm-62 mm, for example, and the short side is set to 42 mm-44 mm, for example. As shown in FIG. 1, the thickness t2 of the substrate 11 is set to 0.8 mm-1.6 mm, for example.

  The conductor of the board | substrate 11 is comprised in the material excellent in electroconductivity, such as copper (Cu), Cu alloy, and gold (Au), in Example 1. For example, when Cu is used, it is formed of a Cu foil attached by a lamination method or a press molding method or a composite film in which a Cu plating layer is laminated on the surface of the Cu foil by a plating method. In the case of a single layer Cu foil, the film thickness is set to 30 μm to 40 μm, for example. In the case of the composite film, the film thickness of the Cu foil is set to 15 μm to 20 μm, for example, and the Cu plating layer is set to 15 μm to 25 μm, for example.

[Configuration of electronic components]
As shown in FIGS. 1 to 4, on the first surface 11A of the substrate 11, as the electronic components, the transistor portion 2, the first transformer 3, the capacitors 42 and 43, the diode 5, and the diode 5 shown in FIG. A control unit 6, a second transformer 7, and a temperature detection unit 8 are mounted. For example, a capacitor 41 is mounted on the second surface 11B of the substrate 11 as an electronic component.

  The transistor unit 2 is a semiconductor device in which a semiconductor chip having a first IGFET 21 and a diode 23 is sealed with a resin sealing body, and similarly, a semiconductor chip having a second IGFET 22 and a diode 24 is sealed with a resin sealing body. And is constructed. The transistor portion 2 is disposed on the lower right side of the peripheral region in FIG. 3 on the first surface 11A.

  The capacitor 42 is configured, for example, by sealing a capacitor body with a resin sealing body. The glass epoxy resin in Example 1 can be used practically for the resin sealing body. The number of capacitors 42 to be mounted is not limited by the target capacitance value, but four capacitors 42 are arranged on the first surface 11A of the substrate 11 on the lower right side of the peripheral region in FIG. . The capacitor (first electronic component) 43 is configured, for example, by sealing a capacitor body with a resin sealing body. Similarly, the number of capacitors 43 is not limited by the target capacitance value, but three capacitors 43 are arranged on the first surface 11A of the substrate 11 on the lower left side of the peripheral region in FIG. Yes.

  The diode (second electronic component) 5 is configured, for example, by sealing a diode body, specifically a diode chip (semiconductor element) with a resin sealing body. In the first embodiment, the diode 5 is configured by a surface mount type full mold package, and the height (thickness) t3 from the first surface 11A of the substrate 11 to the upper surface of the package is, for example, 0.8 mm −1. .2mm is set. The number of diodes 5 mounted is not limited by the intended rectification characteristics, but on the first surface 11A of the substrate 11, on the left side of the peripheral region in FIG. 3 (along the left side of the substrate 11). Six are arranged. The diode 5 has a larger amount of heat generated by the voltage conversion operation of the electronic circuit system than the capacitor 43, for example, and is intensively arranged on the first surface 11A of the substrate 11 as a heating element.

  The control unit 6 includes a semiconductor device (control IC) 61 in which a semiconductor chip having a circuit for controlling at least the transistor unit 2 such as a transistor, a logic circuit, a resistor, and a capacitor is sealed with a resin sealing body, and a photocoupler 62. And 63, and is constructed. The semiconductor device 61 of the control unit 6 is arranged on the first surface 11A of the substrate 11 on the upper right side of the peripheral region in FIG. Photocouplers 62 and 63 are arranged on the upper left side in FIG. 3 on first surface 11A of substrate 11.

  The temperature detection unit 8 is disposed on the first surface 11A of the substrate 11 on the upper left side of the peripheral region in FIG. 3 and between the diode 5 and the photocouplers 62 and 63. The temperature detector 8 is arranged in a region where the diodes 5 are concentrated and in a position separated from directly below the first radiator 91 so as to prevent the temperature detector 8 itself from being damaged or malfunctioning. It has become.

  As shown in FIGS. 2 to 4, the first transformer 3 is inserted and disposed in the opening 15 in the central region of the first surface 11 </ b> A of the substrate 11. In the first embodiment, the opening 15 is configured as a through hole penetrating from the first surface 11A of the substrate 11 to the second surface 11B facing the substrate 11.

  In the electronic circuit device 1 according to the first embodiment, the first transformer 3 has a sheet transformer structure. Although a detailed description of the structure is omitted, the first transformer 3 has a primary side winding and a secondary side winding, a transformer substrate 12 having a through hole in the central portion, a surface of the transformer substrate 12, and A core 33 disposed along a part of the opposite back surface and side surface and disposed as a magnetic core of the toroidal core is also provided in a through hole in the central portion. The transformer substrate 12 includes an insulating base made of, for example, glass epoxy resin, and, for example, a conductor that constructs a primary side winding and a secondary side winding. For this conductor, for example, a material having excellent conductivity such as Cu, Cu alloy, or Au is used. The core 33 is made of, for example, a ferrite magnetic material obtained by sintering a metal oxide ferromagnetic material as a ceramic. Alternatively, the core 33 may be formed of an amorphous magnetic material. The thickness of the first transformer 3 (the thickness of the core 33) is set to 5.0 mm to 5.6 mm, for example. Further, the core 33 may have either an EI type core shape or an EE type core shape.

  The capacitor 41 is configured by sealing a capacitor body with a resin sealing body, for example, in the same manner as the capacitors 42 and 43 described above. The number of capacitors 41 to be mounted is not limited by the target capacitance value, but five capacitors 41 are arranged on the second surface 11B of the substrate 11 on the lower left side of the peripheral region in FIG. The capacitor 41 is disposed at a position facing the position where the capacitor 42 is disposed.

  The second transformer 7 has a sheet transformer structure similar to the structure of the first transformer 3, although the induced electromotive force and the overall size of the second transformer 7 are smaller than those of the first transformer 3. Similarly to the method of mounting the first transformer 3 on the substrate 11, the second transformer 7 is mounted in a state of being inserted into the opening 16 provided in the substrate 11.

[Lead structure]
As shown in FIGS. 1 to 4, the second leads 181 to 187 and the first leads 188 are arranged on one side surface along the long side of the substrate 11, and on the other side surface facing the one side surface. Second leads 191 to 194 and first leads 195 are arranged. In these second leads 181 and the like, a portion inside the resin sealing body 17 is an inner portion, and a protruding portion outside the resin sealing body 17 is an outer portion.

  The second lead 181 is used as a DC voltage terminal DCIN. The second lead 182 is used as a switching signal terminal ON / OFF. The second lead 183 is used as the input terminal Vin +. The second lead 184 is used as the input terminal Vin−. The second lead 185 is used as the output terminal Vout +. The second lead 186 is used as an output voltage adjustment terminal TRM. The second lead 187 is used as the output terminal Vout−. The first lead 188 is an empty terminal NC, and is used as a heat dissipation path in the first embodiment.

  The second leads 191 to 194 are empty terminals NC. The first lead 195 is an empty terminal NC and is used as a heat dissipation path in the first embodiment.

  The second lead 181 and the like are made of, for example, Cu or Cu alloy having excellent electrical conductivity. This conductive material has low thermal resistance and excellent thermal conductivity. The thickness of the second lead 181 etc. is set to 0.3 mm-0.5 mm, for example.

[Structure of radiator]
As shown in FIGS. 1 to 4, the first heat radiating body 91 is disposed over a plurality of diodes (second electronic components) 5, here a total of six diodes 5, and these diodes 5. The resin sealing body is disposed in direct contact with the surface. Further, the first heat radiator 91 may be brought into contact with the diode 5 through an adhesive 95 having a low thermal resistance and excellent thermal conductivity as shown in FIG. 10 described later. The first heat radiating body 91 is disposed to face the first surface 11A of the substrate 11 with the diode 5 interposed therebetween, and can cover the plurality of diodes 5 almost completely with a length slightly larger than the short side of the substrate 11A. It is comprised by the strip-shaped board | plate material which has width. In the first embodiment, the first radiator 91 is set to a length of 44 mm to 46 mm and a width of 5.0 mm to 7.0 mm, for example, and a thickness t4 is set to 0.5 mm to 1.5 mm, for example. ing.

  The first heat radiator 91 is formed integrally with the connecting portion 92 at one end in the length direction, and is thermally connected to the first lead 188 through the connecting portion 92. Similarly, the first heat radiator 91 is integrally formed with the connecting portion 92 at the other end in the length direction, and is thermally connected to the first lead 195 through the connecting portion 92. The connecting portion 92 is provided along the side surface of the substrate 11A and on the first lead 188 or 195 in order to connect the first heat dissipating body 91 disposed on the diode 5 and the first lead 188 or 195. It is comprised by the cross-section L character shape along the surface. In Example 1, the heat radiator 9 is constructed by including the first heat radiator 91 and connecting portions 92 respectively connected to both ends thereof. The overall cross-sectional shape of the radiator 9 is a reverse concave shape as shown in FIGS. 1 and 2.

  The heat dissipating body 9 is made of, for example, the same material as that of the second lead 181 and the like, in particular, a Cu or Cu alloy plate material having a much lower thermal resistance than the resin sealing body 17 and excellent in thermal conductivity. Yes. Although not shown in detail in FIG. 1 to FIG. 4, an adhesive layer is disposed between the connecting portion 92 of the radiator 9 and each of the first leads 188 and 195, and both of them are attached by this adhesive layer. Thermally connected. For the adhesive layer, for example, solder, paste or the like having a low thermal resistance and excellent thermal conductivity can be used. For example, Sn-Ag-Cu solder can be used practically as the solder. Further, for example, an Ag paste used as a conductive paste can be used practically.

  In the first embodiment, the radiator 9 generates a large amount of heat in the electronic circuit device 1 due to the operation of the electronic circuit system, that is, the voltage conversion operation, and is intended to radiate heat generated from the concentrated diodes 5 group. , Which is dedicated to the area. In order to prevent the thickness t1 of the resin sealing body 17 from being increased due to the mounting of the heat radiating body 9, the heat radiating body 9 has a capacitor 43 (resin-sealed thereof) whose mounting height is relatively high on the first surface 11A of the substrate 11. It is disposed at a position lower than the height of the upper surface of the stop body. That is, the first radiator 91 of the radiator 9 is disposed between the upper surface of the diode 5 (second electronic component) and the upper surface of the capacitor 43 (first electronic component).

[Structure of resin encapsulant]
As shown in FIGS. 1 to 4 (indicated by a broken line in FIG. 2), the electronic circuit device 1 according to the first embodiment uses the resin sealing body 17 to attach the substrate 11 on which a plurality of electronic components are mounted as described above. It is hermetically sealed. The resin sealing body 17 is formed by a transfer mold method. The electronic circuit device 1 according to the first embodiment is obtained by fully molding a DC-DC converter as one component, is suitable for downsizing and thinning, has high reliability, and is easy to use.

  In Example 1, the resin sealing body 17 is made of glass epoxy resin, which is the same material as the insulating base material of the substrate 11 and the insulating base material of the transformer substrate 12. Although not necessarily limited to this value, in Example 1, the length of the long side of the resin sealing body 17 is set to 68 mm-72 mm, for example, and the length of the short side is set to 48 mm-52 mm, for example. ing. Since the first radiator 91 of the radiator 9 is disposed at a position lower than the upper surface of the capacitor 43 other than the diode 5, there is no increase in the thickness of the resin sealing body 17 due to the radiator 9. The thickness t1 of the resin sealing body 17 is quite thin, for example, set to 6.5 mm-6.9 mm.

[Heat dissipation characteristics of electronic circuit devices]
The heat dissipation characteristics of the electronic circuit device 1 according to Example 1 described above are as follows. For comparison, the heat generation profile associated with the voltage conversion operation of the electronic circuit device 1 that does not include the heat radiating body 9 is as shown in FIGS. 6 (A) and 6 (B). FIG. 6A shows a heat generation profile in a state where electronic components are mounted on the substrate 11 and the first surface 11A thereof. FIG. 6B shows a heat generation profile in the state of the resin sealing body 17. The isothermal line A is 40 ° C., the isothermal line B is 55 ° C., the isothermal line C is 70 ° C., the isothermal line D is 85 ° C., the isothermal line E is 100 ° C., and the isothermal line F is 115 ° C.

  As shown in FIG. 6A, heat generation exceeding the temperature of 115 ° C. occurs in the region of the diode 5 group along with the voltage conversion operation. As shown in FIG. 6B, the heat generated in the region of the diode 5 group does not decrease until reaching the surface of the resin sealing body 17, and the temperature of the surface of the resin sealing body 17 reaches 100 ° C.

  In contrast, in the electronic circuit device 1 according to the first embodiment, when the first heat radiating body 91 of the heat radiating body 9 is provided, as shown in FIG. The temperature generated in the group region can be reduced to about 85 ° C. due to the effect of heat being dispersed in the resin sealing body 17 by the first heat radiator 91. As shown in FIG. 7B, the temperature of the surface of the resin sealing body 17 similarly decreases to about 85 ° C.

  Then, in the electronic circuit device 1 according to the first embodiment in which the heat radiator 9 including the first heat radiator 91 and the connecting portion 92 is thermally connected to the first leads 188 and 195, FIG. As shown in FIG. 7, the temperature generated in the region of the diode 5 group in accordance with the voltage conversion operation can be reduced to about 85 ° C. as in the case of the electronic circuit device 1 shown in FIG. The range of the high temperature region can be reduced. As shown in FIG. 8B, the temperature of the surface of the resin sealing body 17 can be similarly reduced to about 85 ° C., and the range of the high temperature region can be reduced.

  In the electronic circuit device 1 according to the first embodiment configured as described above, since the heat dissipating body 9 including at least the first heat dissipating body 91 is provided, the heat dissipating efficiency can be improved, and further the diode serving as the heat generating body 5 (second electronic component) is provided with the first heat radiating body 91 corresponding to its thickness (at a position lower than that of the second electronic component). Thinning and miniaturization can be realized without increasing the thickness.

  Further, in the electronic circuit device 1 according to the first embodiment, the heat dissipating body 9 is provided in direct contact with the diode 5. Therefore, in the heat dissipating path between the diode 5 and the heat dissipating body 9 (first heat dissipating body 91). Thermal resistance can be reduced, and heat dissipation efficiency can be further improved.

  Further, in the electronic circuit device 1 according to the first embodiment, the temperature detection unit 8 that detects the heat generation temperature associated with the operation of the diode 5 is provided at a position away from the group of the diodes 5. Therefore, the heat generation temperature of the diode 5 can be accurately detected. Therefore, when an abnormal temperature rise occurs in the electronic circuit device 1, the power supplied to the electronic circuit system can be shut off, and the electronic circuit system can be protected.

[Modification of electronic circuit device]
The electronic circuit device 1 according to the modification of the first embodiment basically has the same configuration as the electronic circuit device 1 according to the first embodiment described above, but the first lead connected to the radiator 9. Each of 188 and 195 is widened (enlarged) (see FIG. 8A). In the electronic circuit device 1, two types of lead widths are set, and the narrow width dimension is, for example, 0.9 mm-1.1 mm, and the wide width dimension is, for example, 2.3 mm-2.5 mm. Each of the first leads 188 and 195 is set to have a wide width in order to reduce the thermal resistance in the heat radiation path from the heat radiator 9 to the outside of the resin sealing body 17.

  The heat dissipation characteristics of the electronic circuit device 1 according to the modification are as shown in FIGS. 9 (A) and 9 (B). That is, as shown in FIG. 9A, with the voltage conversion operation, the temperature generated in the region of the diode 5 group decreases to about 85 ° C. as in the case of the electronic circuit device 1 shown in FIG. And the extent of this high temperature region can be reduced. As shown in FIG. 9B, the temperature of the surface of the resin sealing body 17 can be similarly reduced to about 85 ° C., and the range of the high temperature region can be further reduced.

  In the electronic circuit device 1 according to the modification of the first embodiment, since the first leads 188 and 195 having the wide lead width are provided, the heat dissipation efficiency can be further improved with a simple configuration.

(Example 2)
Example 2 of the present invention describes an example in which the heat dissipation characteristics of the electronic circuit device 1 according to Example 1 are further improved.

  As shown in FIG. 10, the electronic circuit device 1 according to the second embodiment includes a heat dissipation column 97 embedded immediately below the diode 5 (second electronic component) on the substrate 11, and a second surface (back surface) of the substrate 11. And a second heat dissipating body 93 that is disposed on 11B and thermally connected to the heat dissipating column 97. In the second embodiment, the radiator 9 is constructed by including a first radiator 91, a radiator column 97, and a second radiator 93.

  In the second embodiment, an adhesive layer 95 is disposed between the diode 5 and the first heat radiator 91. For this adhesive layer, for example, an epoxy adhesive having a film thickness of 0.08 mm-0.12 mm can be practically used so that the thermal resistance is reduced.

  The heat dissipating column 97 is disposed in a through-hole penetrating the substrate 11 and is made of, for example, Cu or Cu alloy having excellent thermal conductivity. The heat radiation column 97 is a thermal via and is formed by, for example, a plating method.

  The second heat radiator 93 basically has the same size and shape as the first heat radiator 91. The second radiator 93 is made of the same material as the first radiator 91. The second heat radiator 93 is attached to the surface of the conductor 111 disposed on the second surface 11B of the substrate 11 via an adhesive layer 96. The heat radiation column 97 and the conductor 111 are thermally connected, and the conductor 111 and the second heat radiator 93 are thermally connected. For the adhesive layer 96, for example, solder can be used practically.

  The heat dissipation characteristics of the electronic circuit device 1 according to Example 2 are as shown in FIGS. 12 (A) and 12 (B). That is, as shown in FIG. 12A, the temperature generated in the region of the diode 5 group in accordance with the voltage conversion operation is about 85 ° C. as in the case of the electronic circuit device 1 shown in FIG. And the extent of this high temperature region can be further reduced. As shown in FIG. 12B, the temperature of the surface of the resin sealing body 17 can be similarly reduced to about 85 ° C., and the range of the high temperature region can be further reduced.

  This heat dissipation characteristic is the heat dissipation characteristic of the electronic circuit device 1 in which the radiator 9 is not provided with the connecting portion 92, but when the radiator 9 is provided with the connecting portion 92 (see FIGS. 8A and 8B described above). ))), When the lead widths of the first leads 188 and 195 connected to the radiator 9 are increased (see FIGS. 9A and 9B), the heat dissipation characteristics are further improved. Can be improved.

  In the electronic circuit device 1 according to the second embodiment, the same effects as those obtained by the electronic circuit device 1 according to the first embodiment can be obtained, and the heat dissipation efficiency can be further improved.

(Example 3)
The third embodiment of the present invention describes an example in which the heat dissipation characteristics of the electronic circuit device 1 according to the first embodiment are further improved.

  As shown in FIG. 11, the electronic circuit device 1 according to the third embodiment is disposed on the first radiator 91 and the second surface 11 </ b> B of the substrate 11 so as to face the first radiator 91. The second radiator 93 is disposed along the side surface of the substrate 11 and one end is thermally connected to the first radiator 91 and the other end is thermally connected to the second radiator 93. A radiator 9 having a third radiator 94 is provided. The first radiator 91 of the radiator 9 is the same as the first radiator 91 of the electronic circuit device 1 according to the first embodiment, and the second radiator 93 is an electron according to the second embodiment. This is the same as the second radiator 93 of the circuit device 1. The third radiator 94 of the radiator 9 is integrally formed with the first radiator 91 and the second radiator 93 in the third embodiment. That is, the cross-sectional shape of the radiator 9 is configured by a U-shape disposed over the first surface 11 </ b> A, the side surface, and the second surface 11 </ b> B of the substrate 11.

  The heat dissipation characteristics of the electronic circuit device 1 according to Example 3 are as shown in FIGS. 13 (A) and 13 (B). That is, as shown in FIG. 13A, the temperature generated in the region of the diode 5 group in accordance with the voltage conversion operation is about 70 ° C. lower than that in the electronic circuit device 1 shown in FIG. Can be reduced to. As shown in FIG. 13B, the temperature of the surface of the resin sealing body 17 can be similarly reduced to about 70.degree.

  This heat dissipation characteristic is the heat dissipation characteristic of the electronic circuit device 1 in which the radiator 9 is not provided with the connecting portion 92, but when the radiator 9 is provided with the connecting portion 92 (see FIGS. 8A and 8B described above). ))), When the lead widths of the first leads 188 and 195 connected to the radiator 9 are increased (see FIGS. 9A and 9B), the heat dissipation characteristics are further improved. Can be improved.

  In the electronic circuit device 1 according to the third embodiment, the same effects as those obtained by the electronic circuit device 1 according to the first embodiment can be obtained, and the heat dissipation efficiency can be further improved.

(Other embodiments)
As mentioned above, although this invention was described by Example 1, Example 2, and Example 3, the description and drawing which make a part of this indication do not limit this invention. The present invention can be applied to various alternative embodiments, examples, and operational technologies.

  For example, in the electronic circuit device 1 according to the first to third embodiments described above, the present invention increases the thickness of the first radiator 91 of the radiator 9 to such an extent that it is exposed to the outer surface of the resin radiator 17. An external heat radiation fin may be attached to the first heat radiator 91. When the first heat radiating body 91 and the connecting portion 92 are manufactured integrally, a plate material having the thickness of the first heat radiating body 91 is prepared, and the thickness of the region of the connecting portion 92 is reduced by using, for example, an etching technique. By doing so, the thick 1st heat radiator 91 can be manufactured easily. In addition, when using a plate material having the same thickness of the first heat radiator 91 and the connecting portion 92, a plate material having an excellent thermal resistivity for increasing the thickness is bonded to the first heat radiator 91, The thickness of the radiator 91 can be increased. Thus, the electronic circuit device 1 equipped with the external heat radiation fin can further improve the heat radiation efficiency.

  Further, in the electronic circuit device 1 according to the first to third embodiments described above, the diode 5 (second electronic component), the capacitor 43 (first electronic component), and the heat dissipation are provided on the first surface 11A of the substrate 11. Although the example provided with the 1st heat radiating body 91 of the body 9 was demonstrated, this invention is not limited to this. That is, in the electronic circuit device 1 according to the present invention, the diode 5 (second electronic component) and the capacitor 43 (on the second surface 11B of the substrate 11 or both the first surface 11A and the second surface 11B are provided. (First electronic component) and the first radiator 91 of the radiator 9 may be provided.

  In the electronic circuit device 1 according to the first to third embodiments described above, the case where the diode 5 is taken as an example of the second electronic component serving as a heating element has been described. A large power transistor, specifically, a MOSFET, an IGBT, or the like may be used as the second electronic component, and the radiator 9 may be attached thereto. In particular, since these power transistors generate a large amount of heat, they are mounted, for example, on the first surface 11A (or the second surface 11B) of the substrate 11 in a face-down manner, and the first radiator of the radiator 9 on the back surface. 91 is contacted or adhered. In the electronic circuit device 1 configured as described above, the heat generated by the operation of the power transistor can be efficiently radiated.

  The present invention can be widely applied to electronic circuit devices that can achieve a reduction in thickness and size while improving heat dissipation efficiency.

DESCRIPTION OF SYMBOLS 1 ... Electronic circuit apparatus 11 ... Board | substrate 12 ... Transformer substrate 17 ... Resin sealing body 2 ... Transistor part 21 ... 1st IGFET
22 ... Second IGFET
DESCRIPTION OF SYMBOLS 3 ... 1st transformer 33 ... Core 41-43 ... Capacitor 5 ... Diode 6 ... Control part 7 ... 2nd transformer 8 ... Temperature detection part 9 ... Radiator 91 ... 1st heat radiator 92 ... Connection part 93 ... 1st 2 radiator 94 .. 3rd radiator

Claims (5)

A substrate having a first surface and a second surface opposite the first surface;
A plurality of first and second leads arranged on a side surface of the substrate;
A first electronic component disposed on a portion of the first surface of the substrate;
A second electronic component disposed on another part of the first surface of the substrate, generating a larger amount of heat than the first electronic component, and sealing a semiconductor element with a sealing body;
A first heat radiating body having one end in contact with the sealing body of the second electronic component and the other end connected to the first lead;
A resin sealing body for sealing each of the substrate, the inner portion of the first lead and the second lead, the first electronic component, the second electronic component, and the first heat radiator;
An electronic circuit device comprising:   The first electronic component is a capacitor, the second electronic component is a diode, and the first heat radiator is disposed between the upper surface of the second electronic component and the upper surface of the first electronic component. The electronic circuit device according to claim 1, wherein the electronic circuit device is provided.   An electronic circuit system including the first electronic component and the second electronic component in a region separated from the second electronic component and the first heat radiator on the first surface of the substrate. 3. The electronic circuit device according to claim 1, further comprising a temperature detection unit configured to shut off a power supply to be supplied to the electronic circuit system when a certain temperature is reached. A heat dissipating column embedded immediately below the second electronic component of the substrate;
A second radiator disposed on the second surface of the substrate and thermally connected to the radiating post;
The electronic circuit device according to claim 1, further comprising:   A first heat radiator, a second heat radiator disposed on the second surface of the substrate so as to face the first heat radiator, and the side surface of the substrate. And a third heat radiator having one end thermally connected to the first heat radiator and the other end thermally connected to the second heat radiator. The electronic circuit device according to any one of claims 1 to 3.