JP2010245396A5 - - Google Patents

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Publication number
JP2010245396A5
JP2010245396A5 JP2009094164A JP2009094164A JP2010245396A5 JP 2010245396 A5 JP2010245396 A5 JP 2010245396A5 JP 2009094164 A JP2009094164 A JP 2009094164A JP 2009094164 A JP2009094164 A JP 2009094164A JP 2010245396 A5 JP2010245396 A5 JP 2010245396A5
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Japan
Prior art keywords
wafers
mounting table
wafer
container
bonding
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JP2009094164A
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Japanese (ja)
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JP5668275B2 (en
JP2010245396A (en
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Priority to JP2009094164A priority Critical patent/JP5668275B2/en
Priority claimed from JP2009094164A external-priority patent/JP5668275B2/en
Publication of JP2010245396A publication Critical patent/JP2010245396A/en
Publication of JP2010245396A5 publication Critical patent/JP2010245396A5/ja
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Claims (8)

貼り合わせ対象の2枚のウェーハのうち、少なくとも一方のウェーハの貼り合わせ面に酸化膜が形成された前記2枚のウェーハが収容される容器と、該容器内に設けられ前記2枚のウェーハが重ね合わされ載置される載置台と、該載置台の周りに前記ウェーハの外径に合わせて立設される少なくとも3つの支持部材と、前記容器内を排気して減圧する減圧手段を備え、
前記載置台は、載置面が凹状に形成されている貼り合わせ装置。
Of the two wafers to be bonded, a container for storing the two wafers having an oxide film formed on the bonding surface of at least one wafer, and the two wafers provided in the container A mounting table that is superposed and mounted; at least three support members that are erected around the mounting table in accordance with the outer diameter of the wafer; and a decompression unit that exhausts and decompresses the inside of the container,
The mounting table is a bonding apparatus in which the mounting surface is formed in a concave shape.
貼り合わせ対象の2枚のウェーハのうち、少なくとも一方のウェーハの貼り合わせ面に酸化膜が形成された前記2枚のウェーハが収容される容器と、該容器内に設けられ前記2枚のウェーハが重ね合わされ載置される載置台と、該載置台の周りに前記ウェーハの外径に合わせて立設される少なくとも3つの支持部材と、前記容器内を排気して減圧する減圧手段を備え、
前記載置台は、載置面が水平方向に対して0°を超え5°以下傾斜して形成されている貼り合わせ装置。
Of the two wafers to be bonded, a container for storing the two wafers having an oxide film formed on the bonding surface of at least one wafer, and the two wafers provided in the container A mounting table that is superposed and mounted; at least three support members that are erected around the mounting table in accordance with the outer diameter of the wafer; and a decompression unit that exhausts and decompresses the inside of the container,
The mounting table is a bonding apparatus in which the mounting surface is formed with an inclination of more than 0 ° and not more than 5 ° with respect to the horizontal direction.
請求項又はに記載の貼り合わせ装置において、
前記載置台は、載置面が前記ウェーハの貼り合わせ面よりも小さく形成されていることを特徴とする貼り合わせ装置。
In the bonding apparatus according to claim 1 or 2 ,
The bonding apparatus, wherein the mounting table has a mounting surface formed smaller than a bonding surface of the wafer.
請求項乃至のいずれかに記載の貼り合わせ装置において、
前記載置台の載置面上方には押圧部材が設けられていることを特徴とする貼り合わせ装置。
In the bonding apparatus according to any one of claims 1 to 3 ,
A bonding apparatus, wherein a pressing member is provided above the mounting surface of the mounting table.
貼り合わせ対象の2枚のウェーハのうち、少なくとも一方のウェーハの貼り合わせ面に酸化膜が形成された前記2枚のウェーハを、前記酸化膜を介して重ね合わせて容器内の載置台に載置した後、前記容器内を減圧して前記ウェーハ同士の接合を開始させるSOIウェーハの製造方法。   Of the two wafers to be bonded, the two wafers having an oxide film formed on the bonding surface of at least one of the wafers are stacked on the mounting table in the container with the oxide film interposed therebetween. Then, the SOI wafer manufacturing method of starting the bonding between the wafers by depressurizing the inside of the container. 請求項に記載のSOIウェーハの製造方法において、
前記載置台の載置面は凹状に形成されていることを特徴とする製造方法。
In the manufacturing method of the SOI wafer according to claim 5 ,
The manufacturing method according to claim 1, wherein the mounting surface of the mounting table is formed in a concave shape.
請求項に記載のSOIウェーハの製造方法において、
前記載置台の載置面は水平方向に対して0°を超え5°以下傾斜して形成され、前記載置台の周りには前記ウェーハの移動を規制する少なくとも3つの支持部材が立設されていることを特徴とするSOIウェーハの製造方法。
In the manufacturing method of the SOI wafer according to claim 5 ,
The mounting surface of the mounting table is formed to incline from 0 ° to 5 ° or less with respect to the horizontal direction, and at least three support members for restricting the movement of the wafer are erected around the mounting table. A method for producing an SOI wafer, comprising:
請求項乃至のいずれかに記載のSOIウェーハの製造方法において、
前記減圧の後に前記ウェーハを押圧して前記ウェーハ同士の接合を開始させることを特徴とするSOIウェーハの製造方法。
In the manufacturing method of the SOI wafer in any one of Claims 5 thru | or 7 ,
A method of manufacturing an SOI wafer, wherein the wafer is pressed after the pressure reduction to start bonding of the wafers.
JP2009094164A 2009-04-08 2009-04-08 SOI wafer manufacturing method and bonding apparatus Active JP5668275B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009094164A JP5668275B2 (en) 2009-04-08 2009-04-08 SOI wafer manufacturing method and bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009094164A JP5668275B2 (en) 2009-04-08 2009-04-08 SOI wafer manufacturing method and bonding apparatus

Publications (3)

Publication Number Publication Date
JP2010245396A JP2010245396A (en) 2010-10-28
JP2010245396A5 true JP2010245396A5 (en) 2012-02-16
JP5668275B2 JP5668275B2 (en) 2015-02-12

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Family Applications (1)

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JP2009094164A Active JP5668275B2 (en) 2009-04-08 2009-04-08 SOI wafer manufacturing method and bonding apparatus

Country Status (1)

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JP (1) JP5668275B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2963848B1 (en) * 2010-08-11 2012-08-31 Soitec Silicon On Insulator LOW PRESSURE MOLECULAR ADHESION COLLAGE PROCESS
JP2012151407A (en) * 2011-01-21 2012-08-09 Ushio Inc Work stage and exposure device using work stage
JP2012175043A (en) * 2011-02-24 2012-09-10 Tokyo Electron Ltd Joining device, joining system, joining method, program and computer storage medium
JP5352609B2 (en) * 2011-03-04 2013-11-27 東京エレクトロン株式会社 Joining method, program, computer storage medium, joining apparatus and joining system
AT511384B1 (en) 2011-05-11 2019-10-15 Thallner Erich PROCESS AND DEVICE FOR BONDING TWO WAFER
JP6727048B2 (en) * 2016-07-12 2020-07-22 東京エレクトロン株式会社 Substrate transfer device and bonding system
JP7243649B2 (en) * 2020-02-07 2023-03-22 株式会社Sumco SOI wafer bonding method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012971A (en) * 1973-06-04 1975-02-10
JPS5850410B2 (en) * 1976-05-29 1983-11-10 株式会社東芝 Susceptor for semiconductor vapor phase growth
JPS5742174Y2 (en) * 1978-07-28 1982-09-17
JPH07226350A (en) * 1994-02-10 1995-08-22 Sony Corp Wafer pasting device and its method
JP2000164588A (en) * 1998-11-30 2000-06-16 Ebara Corp Substrate-heating method and device
JP2000216365A (en) * 1999-01-21 2000-08-04 Denso Corp Semiconductor board laminating method and its device
JP2004052098A (en) * 2002-05-31 2004-02-19 Tokyo Electron Ltd Substrate treatment apparatus and susceptor used for it
JP2004221447A (en) * 2003-01-17 2004-08-05 Toshiba Ceramics Co Ltd Stuck substrate manufacturing device and method for manufacturing stuck substrate thereby

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