JP2010233030A5 - - Google Patents

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Publication number
JP2010233030A5
JP2010233030A5 JP2009079400A JP2009079400A JP2010233030A5 JP 2010233030 A5 JP2010233030 A5 JP 2010233030A5 JP 2009079400 A JP2009079400 A JP 2009079400A JP 2009079400 A JP2009079400 A JP 2009079400A JP 2010233030 A5 JP2010233030 A5 JP 2010233030A5
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JP
Japan
Prior art keywords
resonant tunneling
resonator
layer
conductor
tunneling diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009079400A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010233030A (ja
JP5441469B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009079400A priority Critical patent/JP5441469B2/ja
Priority claimed from JP2009079400A external-priority patent/JP5441469B2/ja
Priority to US12/731,004 priority patent/US8125281B2/en
Publication of JP2010233030A publication Critical patent/JP2010233030A/ja
Publication of JP2010233030A5 publication Critical patent/JP2010233030A5/ja
Application granted granted Critical
Publication of JP5441469B2 publication Critical patent/JP5441469B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009079400A 2009-03-27 2009-03-27 共振器 Active JP5441469B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009079400A JP5441469B2 (ja) 2009-03-27 2009-03-27 共振器
US12/731,004 US8125281B2 (en) 2009-03-27 2010-03-24 Resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009079400A JP5441469B2 (ja) 2009-03-27 2009-03-27 共振器

Publications (3)

Publication Number Publication Date
JP2010233030A JP2010233030A (ja) 2010-10-14
JP2010233030A5 true JP2010233030A5 (enExample) 2012-05-17
JP5441469B2 JP5441469B2 (ja) 2014-03-12

Family

ID=42783417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009079400A Active JP5441469B2 (ja) 2009-03-27 2009-03-27 共振器

Country Status (2)

Country Link
US (1) US8125281B2 (enExample)
JP (1) JP5441469B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5441470B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
JP5799538B2 (ja) * 2011-03-18 2015-10-28 セイコーエプソン株式会社 テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置
JP5910064B2 (ja) * 2011-12-20 2016-04-27 セイコーエプソン株式会社 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
JP6247495B2 (ja) * 2012-11-26 2017-12-13 キヤノン株式会社 半導体装置、及びその製造方法
JP6100024B2 (ja) * 2013-02-27 2017-03-22 キヤノン株式会社 発振素子
JP2016036128A (ja) * 2014-07-31 2016-03-17 キヤノン株式会社 発振素子
JP7262959B2 (ja) * 2018-10-04 2023-04-24 キヤノン株式会社 半導体素子、半導体素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701633B2 (ja) * 1991-12-09 1998-01-21 日本電気株式会社 半導体装置
JP3542620B2 (ja) 1992-09-30 2004-07-14 テキサス インスツルメンツ インコーポレイテツド 多重ピーク共鳴トンネルダイオード
JP2629620B2 (ja) * 1994-10-13 1997-07-09 日本電気株式会社 負性抵抗ダイオード発振器
US7274263B2 (en) 2004-08-25 2007-09-25 Samsung Electronics Co., Ltd. Microstrip stabilized quantum well resonance-tunneling generator for millimeter and submillimeter wavelength range
JP4857027B2 (ja) * 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP4871816B2 (ja) * 2007-08-31 2012-02-08 キヤノン株式会社 レーザ素子
JP5441470B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器

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